Miniaturized high-gain modulation power amplifier module

Abstract

The utility model relates to a miniaturized high-gain modulation power amplifier module which comprises an amplifier shell, a pre-stage amplifier, a post-stage amplifier, a modulation chip, two radio frequency connectors and a substrate. The substrate is arranged in the amplifier shell, the pre-stage amplifier, the post-stage amplifier and the modulation chip are arranged on the substrate, and the two radio frequency connectors are arranged on the amplifier shell; according to the utility model, when signals are received, the emission signals are closed, and the ground noise is reduced, so that the receiving sensitivity is improved, the characteristics of wide bandwidth and high gain are realized while the receiving sensitivity is improved, and the application scene is wider.

Description

Technical Field

[0001] The utility model belongs to the technical field of power amplifiers, in particular to a miniaturized high-gain modulation power amplifier module. Background Art

[0002] Microwave broadband low noise amplifier plays an important role in microwave communication systems, electronic countermeasure systems, radar systems, and microwave components. It is an indispensable signal receiving node for remote sensing, radar, communication and other systems. It is one of the core components, which has the function of improving sensitivity and reducing receiving noise. It has a very important impact on all aspects of radio communication. Its performance directly affects the signal characteristics, sensitivity and other important parameters of the entire receiver system. In the context of highly developed science and technology and manufacturing processes in modern society, higher requirements are put forward for the development of microwave broadband low noise amplifiers.

[0003] As the key first stage of RF small signal processing in the front end of mobile communication, radar, remote control and remote sensing system receivers, low noise amplifiers play a decisive role in contributing to the noise performance indicators of the entire communication receiving system. Therefore, the research on low noise amplifiers has broad prospects and is of great significance.

[0004] While LNA amplifies low-power signals, it also affects the system signal-to-noise ratio. In addition to common amplifier considerations such as gain and linearity, LNA must also have low noise figure performance to maintain signal quality and system sensitivity. Low noise signals are the core of the receiving system. In radar communication equipment, when receiving signals, the noise floor of the transmitted signal is large, which will reduce the sensitivity of the received signal, thereby affecting the system's sorting performance. Utility Model Content

[0005] The purpose of this section is to summarize some aspects of the embodiments of the utility model and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and the specification abstract and utility model name of this application to avoid blurring the purpose of this section, specification abstract and utility model name, and such simplifications or omissions cannot be used to limit the scope of the utility model.

[0006] In view of the following technical problems in the prior art: when the prior art device receives a signal, the background noise of the transmitted signal is relatively large, which will reduce the sensitivity of the received signal and thus affect the sorting performance of the system.

[0007] In order to solve the above technical problems, the utility model provides the following technical solutions: a miniaturized high-gain modulated power amplifier module, comprising:

[0008] Amplifier housing, pre-amplifier, post-amplifier, modulation chip, two RF connectors and substrate;

[0009] The substrate is placed in the amplifier housing, the pre-amplifier, the post-amplifier and the modulation chip are arranged on the substrate, and two radio frequency connectors are arranged on the amplifier housing.

[0010] As an optimal technical solution for a miniaturized high-gain modulated power amplifier module, the input of the pre-amplifier is connected to the output of the radio frequency signal of the signal source, and the output of the pre-amplifier is connected to the input of the post-amplifier.

[0011] As a preferred technical solution for a miniaturized high-gain modulated power amplifier module, the output connection of the post-stage amplifier is connected to the input of the radio frequency signal of the signal source.

[0012] As a preferred technical solution for a miniaturized high-gain modulated power amplifier module, the pre-amplifier amplifies the input signal power to at least 16 dBm, with a frequency range of 2 to 18 GHz.

[0013] As a preferred technical solution for a miniaturized high-gain modulated power amplifier module, the post-stage amplifier amplifies the input signal power to at least 28.5 dBm, with a frequency range of 2 to 18 GHz.

[0014] As an optimal technical solution for a miniaturized high-gain modulated power amplifier module, the noise coefficient of the pre-amplifier is 2.2dB and the gain is 19.5dB.

[0015] As a preferred technical solution for a miniaturized high-gain modulated power amplifier module, the substrate is an H5220 plate with a thickness of 0.19 mm.

[0016] As an optimal technical solution for a miniaturized high-gain modulation power amplifier module, it also includes a power supply, which is connected to a front-stage amplifier and connected to a rear-stage amplifier via a modulation chip.

[0017] The beneficial effects of the utility model are as follows: when receiving a signal, the utility model turns off the transmitting signal to reduce the background noise, thereby improving the receiving sensitivity; while improving the receiving sensitivity, it has the characteristics of wide bandwidth and high gain, and has a wider application scenario. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the following briefly introduces the drawings required for the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor. Among them:

[0019] Figure 1 It is a structural schematic diagram of the power amplifier in the utility model;

[0020] Figure 2 This is a schematic diagram of the connection relationship structure of the utility model;

[0021] Figure 3 It is a schematic diagram of amplifier link power and gain distribution in the utility model;

[0022] Figure 4 This is a schematic diagram of the T-type impedance matching microstrip structure in the utility model;

[0023] Figure 5 It is a schematic diagram of the test block diagram structure in the utility model;

[0024] Figure 6 This is a schematic diagram of the T-type head matching microstrip simulation insertion return loss waveform in the test of the utility model;

[0025] Figure 7 This is a schematic diagram of the simulated insertion loss curve of the T-type head matching microstrip in the test of the utility model;

[0026] Figure 8 It is a schematic diagram of the input standing wave test curve in the utility model;

[0027] Fig. 9 It is a schematic diagram of the output standing wave test curve in the utility model;

[0028] Fig.10 It is a schematic diagram of the insertion loss test curve in the utility model.

[0029] Reference numerals: amplifier housing 101 , pre-amplifier P1 , post-amplifier P2 , modulation chip 102 , RF connector 103 , substrate 104 , power supply 105 . DETAILED DESCRIPTION

[0030] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings.

[0031] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0032] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present invention. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive with other embodiments.

[0033] Secondly, the present invention is described in detail with reference to the schematic diagram. When describing the embodiments of the present invention, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0034] Example 1

[0035] Reference Figures 1 to 10 , this embodiment provides a miniaturized high-gain modulation power amplifier module, which has the characteristics of high gain, low noise figure, and self-modulation function.

[0036] Specifically, it includes an amplifier housing 101, a pre-amplifier P1, a post-amplifier P2, a modulation chip 102, two RF connectors 103 and a substrate 104; the substrate 104 is placed in the amplifier housing 101, the pre-amplifier P1, the post-amplifier P2, and the modulation chip 102 are arranged on the substrate 104, and the two RF connectors 103 are arranged on the amplifier housing 101.

[0037] The pre-amplifier P1 is used to amplify the input signal power to at least 16dBm. The selected power amplifier chip is made of GaAs material with a frequency range of 2 to 18GHz. The input is connected to the output of the signal source RF signal, and the output is connected to the input of the post-amplifier P2;

[0038] The post-amplifier P2 is used to amplify the input signal power to at least 28.5dBm. The selected power amplifier chip is made of GaAs material with a frequency range of 2 to 18GHz. The input is connected to the output of the pre-amplifier P1, and the output is connected to the input of the signal source RF signal;

[0039] Taking into account the noise coefficient of the amplifier module, the pre-amplifier generally selects a chip with low noise coefficient and high gain. The power amplifier selected this time has a noise coefficient of 2.2dB and a gain of 19.5dB.

[0040] The main chips are all made of mature domestic gallium arsenide chips, which have been verified by engineering and reliability. The bare chip voltage regulator chip design can be placed nearby to reduce the voltage transmission drop, reduce the voltage ripple, and have a compact space, which is conducive to miniaturization.

[0041] Printed circuit boards generally choose boards with low dielectric loss and good heat dissipation characteristics. Based on experience, domestic H5220 boards with a thickness of 0.19mm were selected as the substrate of the amplifier to meet the frequency band used.

[0042] During the design process, the impedance matching between the connector and the microstrip, and between the microstrip and the chip is taken into consideration, and simulation design is performed. Generally, a T-type impedance matching microstrip design is used to ensure good input and output standing wave characteristics, and to optimize the chip cascade matching. The model is as follows Figure 4 As shown, Figure 6 and Figure 7 The corresponding test curve diagram is shown in FIG.

[0043] It uses domestically produced high-speed driver chip as the modulation driver, which has the functions of fast response and fast switching. The circuit adopts bare chip design, with small size, rising edge <30ns, falling edge <30ns, and maximum modulation frequency 1MHz.

[0044] The input of the pre-stage amplifier P1 is connected to the output of the radio frequency signal of the signal source, and the output of the pre-stage amplifier P1 is connected to the input of the post-stage amplifier P2.

[0045] It also includes a power supply 105, which is connected to the pre-amplifier P1. The power supply 105 is connected to the post-amplifier P2 through the modulation chip 102, mainly realizing the modulation function and controlling the switch of the post-amplifier P2.

[0046] Specific:

[0047] The power supply and control board adopt mature circuit design, and the main functions are:

[0048] Provide Vd (+8V / 0.17A) to amplifier P1;

[0049] Provide the amplifier P2 with the required gate voltage Vg (-1V / 0.48A) and adjustable drain voltage Vd (10V / 0.48A). When powered on, the gate voltage is applied first and then the drain voltage, and the opposite is true when powered off.

[0050] Give 1 channel power amplifier modulator;

[0051] Supply power to 1 fan: Vd (+12V);

[0052] Overvoltage (+14.5V) and overcurrent (1.75A) protection;

[0053] Further, in order to verify the beneficial effects of the present invention, Figure 5 The structure of the test block diagram builds the test environment, connects the test equipment, calibrates the vector network analyzer, powers on the module, and tests to obtain the input and output standing wave and insertion loss values.

[0054] The fast response and fast switching test indicators and test results of the amplifier are as follows: the rising edge of the drain voltage curve is 10ns, and the falling edge is 20ns; the rising edge of the amplifier output detection test curve is 10ns, and the falling edge is 10ns; the rising edge delay of the two curves is 10ns, and the falling edge delay is 30ns.

[0055] The measured data of gain and insertion loss of the power amplifier are as follows: Figure 8 , 9 As shown in Figure 10, within the 2-18 GHz bandwidth, the actual test insertion loss of the low noise amplifier is greater than 32dB, and the input and output standing waves are both less than 1.8, and the test performance is good.

[0056] The present invention designs a 2-18 GHz high-performance broadband voltage modulation power amplifier. When receiving a signal, the transmitting signal is turned off to reduce the background noise, thereby improving the receiving sensitivity.

[0057] It can realize fast switching between receiving and transmitting signals, with rising edge <30ns, falling edge <30ns, and maximum modulation frequency of 1MHz.

[0058] While improving the receiving sensitivity, it has the characteristics of wide bandwidth and high gain, and has a wider range of application scenarios.

[0059] It will be appreciated that in the development of any actual implementation, as in any engineering or design project, numerous implementation-specific decisions may be made. Such a development effort may be complex and time-consuming, but will be a routine task of design, fabrication, and production for those of ordinary skill having the benefit of this disclosure without undue experimentation.

[0060] It should be noted that the above embodiments are only used to illustrate the technical solution of the utility model rather than to limit it. Although the utility model has been described in detail with reference to the preferred embodiments, ordinary technicians in the field should understand that the technical solution of the utility model can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the utility model, which should be included in the scope of the claims of the utility model.

Claims

1. A miniaturized high-gain modulated power amplifier module, characterized in that: include, An amplifier housing (101), a pre-amplifier (P1), a post-amplifier (P2), a modulation chip (102), two radio frequency connectors (103) and a substrate (104); The substrate (104) is placed in an amplifier housing (101); the pre-stage amplifier (P1), the post-stage amplifier (P2), and the modulation chip (102) are arranged on the substrate (104); and two radio frequency connectors (103) are arranged on the amplifier housing (101).

2. The miniaturized high-gain modulated power amplifier module according to claim 1, characterized in that: The input of the pre-stage amplifier (P1) is connected to the output of the radio frequency signal of the signal source, and the output of the pre-stage amplifier (P1) is connected to the input of the post-stage amplifier (P2).

3. The miniaturized high-gain modulated power amplifier module according to claim 1 or 2, characterized in that: The output of the post-stage amplifier (P2) is connected to the input of the radio frequency signal of the signal source.

4. The miniaturized high-gain modulated power amplifier module according to claim 3, characterized in that: The pre-amplifier (P1) amplifies the input signal power to at least 16 dBm, with a frequency range of 2 to 18 GHz.

5. The miniaturized high-gain modulated power amplifier module according to claim 4, characterized in that: The post-stage amplifier (P2) amplifies the input signal power to at least 28.5 dBm, with a frequency range of 2 to 18 GHz.

6. The miniaturized high-gain modulated power amplifier module according to claim 5, characterized in that: The noise coefficient of the pre-amplifier (P1) is 2.2dB and the gain is 19.5dB.

7. The miniaturized high-gain modulated power amplifier module according to any one of claims 4 to 6, characterized in that: The substrate (104) is a H5220 plate with a thickness of 0.19 mm.

8. The miniaturized high-gain modulated power amplifier module according to claim 7, characterized in that: It also includes a power supply (105), wherein the power supply (105) is connected to the pre-stage amplifier (P1), and the power supply (105) is connected to the post-stage amplifier (P2) via a modulation chip (102).

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