Half-bridge driving circuit of field effect transistor and electronic equipment

Abstract

The utility model provides a half-bridge driving circuit of a field effect transistor and electronic equipment. The driving circuit comprises a first field effect transistor, a second field effect transistor, a first driving circuit and a second driving circuit, the first driving circuit comprises a fourth resistor, a first inductor and a first diode; the second end of the fourth resistor is connected with the first end of the first inductor, the second end of the first inductor is connected with the grid electrode of the first field effect transistor, and the drain electrode of the first field effect transistor is connected with the source electrode of the second field effect transistor; the anode of the first diode is connected with the second end of the fourth resistor, and the cathode of the first diode is connected with the first end of the fourth resistor; the second driving circuit comprises a ninth resistor, a second inductor and a second diode; the abrupt change of the voltage difference between the grid electrode and the source electrode is limited through the relative negative voltage generated by the inductor, meanwhile, peak current and voltage are restrained through the combination of the resistor and the capacitor, and the anti-interference performance of the driving circuit is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of power electronics, in particular to a half-bridge driving circuit of a field effect transistor and an electronic device. Background Art

[0002] Gallium nitride (GaN) field effect transistor is a high-performance electronic device based on gallium nitride materials and belongs to the third generation of semiconductor devices. Compared with traditional silicon (Si) based transistors, GaN field effect transistors have lower on-state voltage, lower on-state internal resistance, and faster switching speed, showing a series of significant advantages, making them an ideal choice for high-frequency and high-power applications.

[0003] For half-bridge circuits using field effect transistors, due to their small threshold voltage and fast switching speed, they are prone to mis-conduction during the switching process, which in turn affects the working performance and device life of the field effect transistor. Although traditional drive circuits have certain advantages in terms of volume and cost, they do not have negative voltage drive, which causes the field effect transistor to be repeatedly turned on during the switching process, affecting the normal operation of the device.

[0004] Therefore, improving the anti-interference performance of the half-bridge circuit is an urgent problem to be solved for the large-scale application of field effect transistors. Utility Model Content

[0005] Based on this, it is necessary to provide a half-bridge driving circuit and electronic equipment of a field effect transistor to address the above technical problems.

[0006] A half-bridge driving circuit of a field effect transistor comprises: a first field effect transistor, a second field effect transistor, a first driving circuit and a second driving circuit;

[0007] The first driving circuit includes: a fourth resistor, a first inductor and a first diode;

[0008] The first end of the fourth resistor is used to be connected to a power source, the second end of the fourth resistor is connected to the first end of the first inductor, the second end of the first inductor is connected to the gate of the first field effect transistor, and the drain of the first field effect transistor is connected to the source of the second field effect transistor;

[0009] An anode of the first diode is connected to the second end of the fourth resistor, and a cathode of the first diode is connected to the first end of the fourth resistor;

[0010] The second driving circuit includes: a ninth resistor, a second inductor and a second diode;

[0011] The first end of the ninth resistor is used to be connected to the power supply, the second end of the ninth resistor is connected to the first end of the second inductor, and the second end of the second inductor is connected to the gate of the second field effect transistor;

[0012] An anode of the second diode is connected to the second end of the ninth resistor, and a cathode of the second diode is connected to the first end of the ninth resistor.

[0013] In one embodiment, a fifth resistor is further included, wherein a first end of the fifth resistor is connected to a second end of the fourth resistor, and a second end of the fifth resistor is connected to a first end of the inductor.

[0014] In one embodiment, it further includes a first resistor and a first capacitor, wherein the first end of the first resistor is connected to the gate of the first field effect transistor, the second end of the first resistor is connected to the first end of the first capacitor, and the second end of the first capacitor is connected to the drain of the first field effect transistor.

[0015] In one embodiment, it further includes a second resistor and a second capacitor, wherein the first end of the second resistor is connected to the gate of the first field effect transistor, the second end of the second resistor is connected to the first end of the second capacitor, and the second end of the second capacitor is connected to the source of the first field effect transistor.

[0016] In one embodiment, a third resistor and a third capacitor are further included, wherein the first end of the third capacitor is connected to the source of the first field effect transistor, the second end of the third capacitor is connected to the first end of the third resistor, and the second end of the third resistor is connected to the drain of the first field effect transistor.

[0017] In one embodiment, a tenth resistor is further included, wherein a first end of the tenth resistor is connected to a second end of the ninth resistor, and a second end of the tenth resistor is connected to a first end of the second inductor.

[0018] In one embodiment, it further includes a sixth resistor and a fourth capacitor, wherein the first end of the sixth resistor is connected to the gate of the second field effect transistor, the second end of the sixth resistor is connected to the first end of the fourth capacitor, and the second end of the fourth capacitor is connected to the drain of the second field effect transistor.

[0019] In one embodiment, it also includes a seventh resistor and a fifth capacitor, wherein the first end of the seventh resistor is connected to the gate of the second field effect transistor, the second end of the seventh resistor is connected to the first end of the fifth capacitor, and the second end of the fifth capacitor is connected to the source of the second field effect transistor.

[0020] In one embodiment, an eighth resistor and a sixth capacitor are further included, wherein the first end of the sixth capacitor is connected to the source of the second field effect transistor, the second end of the sixth capacitor is connected to the first end of the eighth resistor, and the second end of the eighth resistor is connected to the drain of the second field effect transistor.

[0021] An electronic device comprises the half-bridge driving circuit of the field effect transistor described in any one of the above embodiments.

[0022] The above-mentioned half-bridge driving circuit of the field effect transistor is provided with a first driving circuit on the upper arm bridge, including: a fourth resistor, a first inductor and a first diode, and a second driving circuit on the lower arm bridge, including: a ninth resistor, a second inductor and a second diode; in the process of turning on and off the field effect transistor, the fourth and ninth resistors are driving resistors, and the relative negative pressure generated by the inductor is used to limit the sudden change of the voltage difference between the gate and the source, and the peak current and voltage are suppressed by the combination of resistors and capacitors, so that the field effect transistor can be quickly turned on and closed according to the signal to avoid mis-conduction, thereby improving the anti-interference performance of the driving circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Schematic diagram of a half-bridge driving circuit of a field effect transistor in one embodiment.

[0024] In the accompanying drawings, R1 is a first resistor; R2 is a second resistor; R3 is a third resistor; R4 is a fourth resistor; R5 is a fifth resistor; R6 is a sixth resistor; R7 is a seventh resistor; R8 is an eighth resistor; R9 is a ninth resistor; R10 is a tenth resistor; C1 is a first capacitor; C2 is a second capacitor; C3 is a third capacitor; C4 is a fourth capacitor; C5 is a fifth capacitor; C6 is a sixth capacitor; D1 is a first diode; D2 is a second diode; L1 is a first inductor; L2 is a second inductor; M1 is a first field effect transistor; M2 is a second field effect transistor. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0026] Embodiment 1

[0027] In this embodiment, Figure 1 As shown, a half-bridge driving circuit of a field effect transistor is provided, comprising: a first field effect transistor M1, a second field effect transistor M2, a first driving circuit and a second driving circuit;

[0028] The first driving circuit includes: a fourth resistor R4, a first inductor L1 and a first diode D1;

[0029] The first end of the fourth resistor R4 is used to be connected to a power source, the second end of the fourth resistor R4 is connected to the first end of the first inductor L1, the second end of the first inductor L1 is connected to the gate of the first field effect transistor M1, and the drain of the first field effect transistor M1 is connected to the source of the second field effect transistor M2;

[0030] An anode of the first diode D1 is connected to the second end of the fourth resistor R4, and a cathode of the first diode D1 is connected to the first end of the fourth resistor R4;

[0031] The second driving circuit includes: a ninth resistor R9, a second inductor L2 and a second diode D2;

[0032] The first end of the ninth resistor R9 is used to be connected to the power supply, the second end of the ninth resistor R9 is connected to the first end of the second inductor L2, and the second end of the second inductor L2 is connected to the gate of the second field effect transistor M2;

[0033] An anode of the second diode D2 is connected to the second end of the ninth resistor R9, and a cathode of the second diode D2 is connected to the first end of the ninth resistor R9.

[0034] Specifically, the first field effect transistor M1 and the second field effect transistor M2 form a half-bridge structure, which are usually N-channel or P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which are used to control the current flow and realize voltage switching on the load. In the upper arm bridge, the first drive circuit includes: a fourth resistor R4, a first inductor L1 and a first diode D1; the first end of the fourth resistor R4 is used to connect to the power supply, and the second end of the fourth resistor R4 is connected to the first end of the first inductor L1. When the first field effect transistor M1 is turned on, the main function of the fourth resistor R4 is to limit the current passing through the gate of the first field effect transistor M1, and protect the gate of the first field effect transistor M1 from being damaged by excessive driving current. In addition, it also helps to slow down the rise of the gate voltage of the first field effect transistor M1 and reduce electromagnetic interference during switching transients;

[0035] The second end of the first inductor L1 is connected to the gate of the first field effect transistor M1, and the first inductor L1 mainly plays the role of filtering and smoothing the driving signal. When the driving pulse arrives, the first inductor L1 can store energy and gradually release it over a period of time, which helps to reduce the high-frequency components of the gate driving signal, smooth the voltage change, reduce the impact on the MOSFET, and improve the stability and reliability of the system. During the switching process of the first field effect transistor M1, especially during the transition period from on to off, according to Faraday's law of electromagnetic induction, when the driving current suddenly changes, the first inductor L1 will generate a back electromotive force (induced voltage), which is a negative voltage when the first field effect transistor M1 is turned off, which helps to steadily reduce the gate-source voltage (Vgs) and avoid a sudden drop in Vgs, thereby reducing overvoltage and oscillation during the shutdown process. The presence of the first inductor L1 also helps to filter out high-frequency noise in the driving signal, improve the purity of the driving signal, and ensure the stable switching of the first field effect transistor M1.

[0036] The anode of the first diode D1 is connected to the second end of the fourth resistor R4, and the cathode of the first diode D1 is connected to the first end of the fourth resistor R4. During the shutdown process of the first field effect transistor M1, a Miller platform is formed due to the parasitic capacitance (Miller capacitance) between the gate and the source. The first diode D1 is forward-conducted during the shutdown phase, providing a low-impedance discharge path for the gate capacitance, protecting the drive circuit from overvoltage damage. The role of the first diode D1 in the drive circuit is to provide a discharge path for releasing the charge in the gate-source capacitance, thereby preventing voltage oscillation during the shutdown process and protecting the first field effect transistor M1 from damage.

[0037] In this embodiment, Figure 1 As shown, in the lower arm bridge, the second driving circuit includes: a ninth resistor R9, a second inductor L2 and a second diode D2; the first end of the ninth resistor R9 is used to connect to the power supply, and the second end of the ninth resistor R9 is connected to the first end of the second inductor L2. When the second field effect transistor M2 is turned on, the main function of the ninth resistor R9 is to limit the current passing through the gate of the second field effect transistor M2, and protect the gate of the second field effect transistor M2 from being damaged by excessive driving current. In addition, it also helps to slow down the rise of the gate voltage of the second field effect transistor M2 and reduce electromagnetic interference during the switching transient period;

[0038] The second end of the second inductor L2 is connected to the gate of the second field effect transistor M2, and the second inductor L2 mainly plays the role of filtering and smoothing the driving signal. When the driving pulse arrives, the second inductor L2 can store energy and gradually release it over a period of time, which helps to reduce the high-frequency components of the gate drive signal, smooth the voltage change, reduce the impact on the MOSFET, and improve the stability and reliability of the system. In the switching process of the second field effect transistor M2, especially in the transition period from on to off, according to Faraday's law of electromagnetic induction, when the driving current suddenly changes, the second inductor L2 will generate a back electromotive force (induced voltage), which is a negative voltage when the second field effect transistor M2 is turned off, which helps to steadily reduce the gate-source voltage (Vgs) and avoid the sudden drop of Vgs, thereby reducing overvoltage and oscillation during the shutdown process. The presence of the second inductor L2 also helps to filter out high-frequency noise in the driving signal, improve the purity of the driving signal, and ensure the stable switching of the second field effect transistor M2.

[0039] The anode of the second diode D2 is connected to the second end of the ninth resistor R9, and the cathode of the second diode D2 is connected to the first end of the ninth resistor R9. During the shutdown process of the second field effect transistor M2, due to the parasitic capacitance (Miller capacitance) between the gate and the source, a Miller platform is formed. The second diode D2 is forward-conducted in the shutdown phase, providing a low-impedance discharge path for the gate capacitance, protecting the drive circuit from overvoltage damage. The role of the second diode D2 in the drive circuit is to provide a discharge path for releasing the charge in the gate-source capacitance, thereby preventing voltage oscillation during the shutdown process and protecting the second field effect transistor M2 from damage.

[0040] In this embodiment, a first drive circuit is provided on the upper arm bridge, including: a fourth resistor R4, a first inductor L1 and a first diode D1, and a second drive circuit is provided on the lower arm bridge, including: a ninth resistor R9, a second inductor L2 and a second diode D2; in the process of turning on and off the field effect transistor, the fourth and ninth resistors R9 are driving resistors, and the relative negative pressure generated by the inductor is used to limit the sudden change of the voltage difference between the gate and the source, and the peak current and voltage are suppressed by the combination of resistors and capacitors, so that the field effect transistor can be quickly turned on and closed according to the signal to avoid mis-conduction, thereby improving the anti-interference ability of the drive circuit.

[0041] In one embodiment, Figure 1 As shown, a fifth resistor R5 is further included, a first end of the fifth resistor R5 is connected to the second end of the fourth resistor R4, and a second end of the fifth resistor R5 is connected to the first end of the first inductor L1.

[0042] In this embodiment, when the first field effect transistor is turned on, the fifth resistor R5 has the same function as the fourth resistor R4, both of which limit the current passing through the gate of the first field effect transistor M1, and another important function of the fifth resistor R5 is to provide a discharge path for the gate capacitor when the first field effect transistor M1 is turned off, and to serve as a driving resistor at the same time. When the first field effect transistor M1 is turned off, the charge on the gate capacitor needs to be released quickly, otherwise it will cause the Miller platform effect, prolong the turn-off time, and increase the switching loss. The presence of the fifth resistor R5 reduces the turn-off current and slows down the turn-off speed of the first field effect transistor M1. In addition, the fifth resistor R5 also helps to reduce electromagnetic interference during the switching transient. The fifth resistor R5 forms a discharge loop with the first diode D1, which is mainly to prevent excessive voltage spikes and protect the gate of the first field effect transistor M1 from being damaged.

[0043] It is worth mentioning that when the first field effect transistor M1 changes from the on state to the off state, the fifth resistor R5 plays a role in limiting the off current. At the same time, the fifth resistor R5 cooperates with the first inductor L1 to generate a negative voltage according to Faraday's law of electromagnetic induction, which helps to steadily reduce the Vgs voltage and avoid the sudden change of the Vgs voltage during the off process. During the on-state of the first field effect transistor M1, the fourth resistor R4 is used to limit the drive current and prevent the gate from overcurrent. In the off process, the fifth resistor R5 mainly functions for current limitation and voltage control.

[0044] In one embodiment, Figure 1 As shown, it also includes a first resistor R1 and a first capacitor C1, the first end of the first resistor R1 is connected to the gate of the first field effect transistor M1, the second end of the first resistor R1 is connected to the first end of the first capacitor C1, and the second end of the first capacitor C1 is connected to the drain of the first field effect transistor M1.

[0045] In this embodiment, when the first field effect transistor M1 is turned on and the second field effect transistor M2 is turned off, the Miller capacitance between the gate and the source of the second field effect transistor M2 (a part of the capacitance between the gate and the drain) will be charged due to the rapid change of the drain voltage, and the charging of the Miller capacitance needs to draw the electricity on the first field effect transistor M1, resulting in the intensification of the Miller oscillation of the first field effect transistor M1 and the extension of the conduction time of the first field effect transistor M1. Therefore, the first capacitor C1 is added to the circuit, and the first capacitor C1 is used to increase the capacitance between the gate and the drain of the first field effect transistor M1 and reduce the interference of the Miller oscillation. At the same time, this charging process will generate a feedback voltage, resulting in the oscillation of the gate voltage, which is called Miller oscillation. Miller oscillation not only prolongs the switching time and increases the switching loss, but may also cause the second field effect transistor M2 to be falsely triggered when it should not be turned on, causing a shoot-through phenomenon, which may cause device damage in severe cases. The first resistor R1 is used to limit the current to prevent excessive current during the charging process of the Miller capacitor. At the same time, during the shutdown process, the first resistor R1 also provides a discharge path for the Miller capacitor, which helps to quickly release the gate charge and accelerate the shutdown process of the first field effect transistor M1. The first capacitor C1 is connected in series with the first resistor R1 to form a low-pass filter, which can filter out high-frequency oscillations, smooth Vgs voltage changes, and prevent false triggering of the second field effect transistor M2.

[0046] In one embodiment, Figure 1 As shown, it also includes a second resistor R2 and a second capacitor C2, the first end of the second resistor R2 is connected to the gate of the first field effect transistor M1, the second end of the second resistor R2 is connected to the first end of the second capacitor C2, and the second end of the second capacitor C2 is connected to the source of the first field effect transistor M1.

[0047] In this embodiment, when the first field effect transistor M1 is quickly switched from the off state to the on state, due to the extremely low on-resistance and high-speed switching characteristics and the sudden change of the inter-electrode voltage, an instantaneous surge current will be generated in the circuit. This current will not only increase the switching loss, but may also cause a sudden change in the gate voltage of the first field effect transistor M1, affecting the stability and reliability of the switching process. The second resistor R2 can limit the surge current at the moment when the first field effect transistor M1 is turned on, prevent the sudden change of the current from causing excessive impact on the gate of the first field effect transistor M1, and protect the device from damage. The second capacitor C2 utilizes the characteristic that the voltage cannot suddenly change, and can absorb the Vgs voltage sudden change caused by the surge current at the moment when the first field effect transistor M1 is turned off. The second capacitor C2 acts as a voltage buffer, which can smooth the change of the Vgs voltage, prevent the violent fluctuation of the Vgs voltage, and ensure the stability and reliability of the first field effect transistor M1 during the shutdown process.

[0048] In one embodiment, Figure 1 As shown, it also includes a third resistor R3 and a third capacitor C3, the first end of the third capacitor C3 is connected to the source of the first field effect transistor M1, the second end of the third capacitor C3 is connected to the first end of the third resistor R3, and the second end of the third resistor R3 is connected to the drain of the first field effect transistor M1.

[0049] In this embodiment, when the first field effect transistor M1 is switched from the off state to the on state, the body diode of the first field effect transistor M1 is rapidly changed from the on state to the off state, and a reverse recovery current is generated in this process. The reverse recovery current will not only increase the switching loss, but also may cause voltage spikes and electromagnetic interference, posing a threat to the stability and efficiency of the circuit. The third resistor R3 can limit the rising rate of the reverse recovery current during the reverse recovery process of the body diode, reduce the switching loss, and also reduce the electromagnetic interference caused by the current mutation. The third capacitor C3 can absorb the energy generated by the reverse recovery current during the reverse recovery process of the body diode, prevent this part of the energy from directly acting on the circuit, reduce the generation of voltage spikes, and protect other components in the circuit.

[0050] In one embodiment, Figure 1 As shown, it also includes a tenth resistor R10, the first end of the tenth resistor R10 is connected to the second end of the ninth resistor R9, and the second end of the tenth resistor R10 is connected to the first end of the second inductor L2. In this embodiment, in this implementation, when the second field effect transistor is turned on, the tenth resistor R10 has the same function as the ninth resistor R9, both of which limit the current passing through the gate of the second field effect transistor M2, and another important function of the tenth resistor R10 is to provide a discharge path for the gate capacitor when the second field effect transistor M2 is turned off, and to serve as a driving resistor at the same time. When the second field effect transistor M2 is turned off, the charge on the gate capacitor needs to be released quickly, otherwise it will cause the Miller platform effect, prolong the turn-off time, and increase the switching loss. The existence of the tenth resistor R10 reduces the turn-off current and slows down the turn-off speed of the second field effect transistor M2. In addition, the tenth resistor R10 also helps to reduce electromagnetic interference during the switching transient. The tenth resistor R10 forms a discharge loop with the second diode D2, mainly to prevent excessive voltage spikes and protect the gate of the second field effect transistor M2 from being damaged.

[0051] It is worth mentioning that when the second field effect transistor M2 changes from the on state to the off state, the tenth resistor R10 plays a role in limiting the off current. At the same time, the tenth resistor R10 cooperates with the second inductor L2 to generate a negative voltage according to Faraday's law of electromagnetic induction, which helps to steadily reduce the Vgs voltage and avoid the sudden change of the Vgs voltage during the off process. During the on-state of the second field effect transistor M2, the ninth resistor R9 is used to limit the drive current and prevent the gate from overcurrent. In the off process, the tenth resistor R10 mainly serves for current limitation and voltage control.

[0052] In one embodiment, Figure 1 As shown, it also includes a sixth resistor R6 and a fourth capacitor C4, the first end of the sixth resistor R6 is connected to the gate of the second field effect transistor M2, the second end of the sixth resistor R6 is connected to the first end of the fourth capacitor C4, and the second end of the fourth capacitor C4 is connected to the drain of the second field effect transistor M2.

[0053] In this embodiment, when the second field effect transistor M2 is turned on and the first field effect transistor M1 is turned off, the Miller capacitance between the gate and the source of the first field effect transistor M1 (a part of the gate-drain capacitance) will be charged due to the rapid change of the drain voltage, and the Miller capacitance charging needs to extract the electricity on the second field effect transistor M2, resulting in the intensification of the Miller oscillation of the second field effect transistor M2 and the extension of the conduction time of the second field effect transistor M2. Therefore, a fourth capacitor C4 is added to the circuit, and the fourth capacitor C4 is used to increase the gate-drain capacitance of the second field effect transistor M2 and reduce the interference of Miller oscillation. During the switching process of the second field effect transistor M2, especially when it turns from on to off, the Miller capacitance between the gate and the source (a part of the gate-drain capacitance) will be charged due to the rapid change of the drain voltage. This charging process will generate a feedback voltage, resulting in the oscillation of the gate voltage, which is called Miller oscillation. Miller oscillation will not only prolong the switching time and increase the switching loss, but also may cause the first field effect transistor M1 to be falsely triggered when it should not be turned on, causing a shoot-through phenomenon, which may cause device damage in severe cases. The sixth resistor R6 is used to limit the current to prevent excessive current during the charging process of the Miller capacitor. At the same time, during the shutdown process, the sixth resistor R6 also provides a discharge path for the Miller capacitor, which helps to quickly release the gate charge and accelerate the shutdown process of the first field effect transistor M1. The fourth capacitor C4 is connected in series with the sixth resistor R6 to form a low-pass filter, which can filter out high-frequency oscillations, smooth Vgs voltage changes, and prevent false triggering of the first field effect transistor M1.

[0054] In this embodiment, when the second field effect transistor M2 is quickly switched from the off state to the on state, due to the extremely low on-resistance and high-speed switching characteristics and the sudden change of the inter-electrode voltage, an instantaneous surge current will be generated in the circuit. This current will not only increase the switching loss, but may also cause a sudden change in the gate voltage of the second field effect transistor M2, affecting the stability and reliability of the switching process. The seventh resistor R7 can limit the surge current from the on-to-off process at the moment when the second field effect transistor M2 is turned off, prevent the current sudden change from causing excessive impact on the gate of the second field effect transistor M2, and protect the device from damage. The seventh capacitor utilizes the characteristic that the voltage cannot suddenly change, and can absorb the Vgs voltage sudden change caused by the surge current at the moment when the second field effect transistor M2 is turned off. The fifth capacitor C5 acts as a voltage buffer, which can smooth the change of the Vgs voltage, prevent the violent fluctuation of the Vgs voltage, and ensure the stability and reliability of the second field effect transistor M2 during the shutdown process.

[0055] In one embodiment, Figure 1 As shown, it also includes an eighth resistor R8 and a sixth capacitor C6, the first end of the sixth capacitor C6 is connected to the source of the second field effect transistor M2, the second end of the sixth capacitor C6 is connected to the first end of the eighth resistor R8, and the second end of the eighth resistor R8 is connected to the drain of the second field effect transistor M2.

[0056] In this embodiment, when the second field effect transistor M2 is switched from the off state to the on state, the body diode of the second field effect transistor M2 is rapidly changed from the on state to the off state, and a reverse recovery current is generated in this process. The reverse recovery current will not only increase the switching loss, but may also cause voltage spikes and electromagnetic interference, posing a threat to the stability and efficiency of the circuit. The eighth resistor R8 can limit the rising rate of the reverse recovery current during the reverse recovery process of the body diode, reduce the switching loss, and also reduce the electromagnetic interference caused by the current mutation. The sixth capacitor C6 can absorb the energy generated by the reverse recovery current during the reverse recovery process of the body diode, prevent this part of the energy from directly acting on the circuit, reduce the generation of voltage spikes, and protect other components in the circuit.

[0057] In one implementation, an electronic device includes the half-bridge driving circuit of the field effect transistor described in any one of the above embodiments.

[0058] In one implementation, the first field effect transistor M1 includes a gallium nitride field effect transistor, and the second field effect transistor M2 includes a gallium nitride field effect transistor.

[0059] In one implementation, the first field effect transistor M1 includes a high-performance metal oxide semiconductor field effect transistor, and the second field effect transistor M2 includes a high-performance metal oxide semiconductor field effect transistor.

[0060] In one implementation, the first field effect transistor M1 includes a silicon carbide field effect transistor, and the second field effect transistor M2 includes a silicon carbide field effect transistor.

[0061] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0062] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the utility model patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A half-bridge driving circuit of a field effect transistor, characterized in that: include: A first field effect transistor, a second field effect transistor, a first drive circuit, and a second drive circuit; The first driving circuit includes: a fourth resistor, a first inductor and a first diode; The first end of the fourth resistor is used to be connected to a power source, the second end of the fourth resistor is connected to the first end of the first inductor, the second end of the first inductor is connected to the gate of the first field effect transistor, and the drain of the first field effect transistor is connected to the source of the second field effect transistor; An anode of the first diode is connected to the second end of the fourth resistor, and a cathode of the first diode is connected to the first end of the fourth resistor; The second driving circuit includes: a ninth resistor, a second inductor and a second diode; The first end of the ninth resistor is used to be connected to the power supply, the second end of the ninth resistor is connected to the first end of the second inductor, and the second end of the second inductor is connected to the gate of the second field effect transistor; An anode of the second diode is connected to the second end of the ninth resistor, and a cathode of the second diode is connected to the first end of the ninth resistor.

2. The half-bridge driving circuit of the field effect transistor according to claim 1, characterized in that: A fifth resistor is also included, wherein a first end of the fifth resistor is connected to the second end of the fourth resistor, and a second end of the fifth resistor is connected to the first end of the inductor.

3. The half-bridge driving circuit of the field effect transistor according to claim 1, characterized in that: It also includes a first resistor and a first capacitor, wherein the first end of the first resistor is connected to the gate of the first field effect transistor, the second end of the first resistor is connected to the first end of the first capacitor, and the second end of the first capacitor is connected to the drain of the first field effect transistor.

4. The half-bridge driving circuit of the field effect transistor according to claim 1, characterized in that: It also includes a second resistor and a second capacitor, wherein the first end of the second resistor is connected to the gate of the first field effect transistor, the second end of the second resistor is connected to the first end of the second capacitor, and the second end of the second capacitor is connected to the source of the first field effect transistor.

5. The half-bridge driving circuit of the field effect transistor according to claim 1, characterized in that: It also includes a third resistor and a third capacitor, wherein the first end of the third capacitor is connected to the source of the first field effect transistor, the second end of the third capacitor is connected to the first end of the third resistor, and the second end of the third resistor is connected to the drain of the first field effect transistor.

6. The half-bridge driving circuit of the field effect transistor according to claim 1, characterized in that: A tenth resistor is also included, wherein a first end of the tenth resistor is connected to a second end of the ninth resistor, and a second end of the tenth resistor is connected to a first end of the second inductor.

7. The half-bridge driving circuit of the field effect transistor according to claim 1, characterized in that: It also includes a sixth resistor and a fourth capacitor, wherein the first end of the sixth resistor is connected to the gate of the second field effect transistor, the second end of the sixth resistor is connected to the first end of the fourth capacitor, and the second end of the fourth capacitor is connected to the drain of the second field effect transistor.

8. The half-bridge driving circuit of the field effect transistor according to claim 1, characterized in that: It also includes a seventh resistor and a fifth capacitor, wherein the first end of the seventh resistor is connected to the gate of the second field effect transistor, the second end of the seventh resistor is connected to the first end of the fifth capacitor, and the second end of the fifth capacitor is connected to the source of the second field effect transistor.

9. The half-bridge driving circuit of the field effect transistor according to claim 1, characterized in that: It also includes an eighth resistor and a sixth capacitor, wherein the first end of the sixth capacitor is connected to the source of the second field effect transistor, the second end of the sixth capacitor is connected to the first end of the eighth resistor, and the second end of the eighth resistor is connected to the drain of the second field effect transistor.

10. An electronic device, characterized in that: A half-bridge driving circuit comprising the field effect transistor as claimed in any one of claims 1 to 9.

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