Deposition furnace device for preparing tungsten crucible by CVD (Chemical Vapor Deposition) process

Abstract

The utility model relates to the technical field of chemical vapor deposition, in particular to a deposition furnace device for preparing a tungsten crucible by a CVD (chemical vapor deposition) process, which comprises a deposition chamber, a gas inlet and a gas outlet mounted on a shell of the deposition chamber, a rotating blade and a porous gas distribution plate mounted on the inner wall of the deposition chamber, and an inner cylinder mounted at the bottom of the deposition chamber, and a material mixing chamber is arranged above the deposition chamber. Therefore, by means of the deposition furnace device for preparing the tungsten crucible through the CVD process, the technical problems that the distribution effect of the distribution plate is limited, the source gas is not evenly distributed in the deposition chamber, the tungsten deposition thickness on a base body is not even, the loss of the source gas is too large, and the deposition efficiency and the deposition quality are affected are solved.

Description

Technical Field

[0001] The present application relates to the technical field of chemical vapor deposition, and more specifically, to a deposition furnace device for preparing a tungsten crucible by a CVD process. Background Art

[0002] The existing traditional CVD deposition furnace is usually divided into a mixing chamber and a deposition chamber by a flat gas distribution plate. The source gas first enters the mixing chamber after passing through the gas inlet pipe, and then enters the deposition chamber after passing through the gas distribution plate. Due to the limited distribution effect of the single-layer distribution plate, the source gas is unevenly distributed in the deposition chamber, resulting in uneven tungsten deposition thickness on the substrate. At the same time, the temperature of the gas distribution plate is very high during the deposition process, and most of the source gas will be directly deposited on the diverter plate before entering the deposition chamber, resulting in excessive source gas loss, affecting deposition efficiency and deposition quality.

[0003] The patent with application number 201920237964.6 discloses a CVD deposition furnace device, including a deposition chamber, a base and an air intake assembly, the air intake assembly is connected to the deposition chamber, and the air intake assembly includes: an air intake pipe, a diverter ball, 3 to 11 diverter pipes, and the diverter pipes are connected to the nozzle. This air intake method can be evenly diffused in the deposition chamber under the action of the nozzle, but the gas is not evenly diffused near the base, so it does not solve the problem of uneven tungsten deposition thickness on the substrate, but only eliminates the diverter plate, avoids a large amount of source gas deposition on the diverter plate, and improves the utilization efficiency of the source gas. Utility Model Content

[0004] Based on the above problems, the present application proposes a deposition furnace device for preparing tungsten crucibles by CVD process, which is used to solve the technical problem that the distribution effect of the distribution plate is limited, resulting in uneven distribution of the source gas in the deposition chamber, and thus uneven tungsten deposition thickness on the substrate, causing excessive source gas loss and affecting deposition efficiency and deposition quality.

[0005] In order to solve the above technical problems, the technical solution adopted by the utility model is:

[0006] A deposition furnace device for preparing tungsten crucibles by CVD process comprises a deposition chamber, an air inlet and an air outlet installed on the outer shell of the deposition chamber, a rotating blade and a porous air distribution plate installed on the inner wall of the deposition chamber, and an inner cylinder installed at the bottom of the deposition chamber.

[0007] In a specific embodiment, the gas inlet is located above the deposition chamber, and the gas outlet is located below the deposition chamber.

[0008] In a specific possible implementation manner, the rotating blade is located above the porous air distribution plate.

[0009] In a specific possible implementation manner, air guide vanes are provided on both sides of the inner wall of the deposition chamber, and at least one air guide vane is provided.

[0010] In a specific embodiment, the outer shell of the deposition chamber is made of stainless steel or heat-resistant steel.

[0011] In a specific possible implementation scheme, at least one inner cylinder is provided, and a base is sleeved on the outer wall of each inner cylinder.

[0012] Positive effects of the utility model:

[0013] The utility model discloses a CVD deposition furnace device for preparing tungsten crucibles, wherein an upper gas distribution plate is arranged at the inlet of a deposition chamber, and the input source gas is distributed by the gas distribution plate and then flows into the deposition chamber evenly, and is evenly diffused near a heated substrate, and the gas after the deposition reaction flows out of the deposition chamber from the lower gas distribution plate. The deposition furnace device with this structure makes the source gas more evenly distributed in the deposition chamber, reduces the ineffective deposition of the source gas, improves the utilization efficiency of the source gas, and greatly guarantees the quality of the produced tungsten products. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0015] Figure 1 It is a structural schematic diagram of an embodiment of the utility model;

[0016] Description of Reference Numerals

[0017] 1. Air inlet; 2. Mixing chamber; 3. Rotating blades; 4. Porous air distribution plate; 5. Sedimentation chamber; 6. Air guide blades; 7. Inner cylinder; 8. Air outlet; 9. Base. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0019] Example

[0020] like Figure 1As shown, a deposition furnace device for preparing tungsten crucible by CVD process includes a deposition chamber 5, an air inlet 1 and an air outlet 8 installed on the outer shell of the deposition chamber 5, a rotating blade 3 and a porous air distribution plate 4 installed on the inner wall of the deposition chamber 5, and an inner cylinder 7 installed at the bottom of the deposition chamber 5. A mixing chamber 2 is arranged above the deposition chamber 5. The mixing chamber 2 is used to mix source gases of different components. During the chemical vapor deposition process, the mixing chamber 2 provides a space so that these gases can be fully mixed before entering the deposition chamber 5, ensuring that they participate in the reaction in an appropriate proportion and concentration during the deposition process.

[0021] The gas inlet 1 is located above the deposition chamber 5, and the gas outlet 8 is located below the deposition chamber 5. The gas inlet 1 is located above the deposition chamber 5, and the gas outlet 8 is located below the deposition chamber 5. This design is conducive to the source gas entering from the top and being discharged from the bottom after passing through various parts in the deposition chamber 5, thereby ensuring that the source gas has a longer residence time and more uniform distribution in the deposition chamber 5.

[0022] The rotating blade 3 is located above the porous air distribution plate 4 .

[0023] Air guide blades 6 are provided on both sides of the inner wall of the deposition chamber 5, and at least one air guide blade 6 is provided. The rotating blade 3 is installed on the inner wall of the deposition chamber 5, and can guide the source gas to flow in the deposition chamber 5, increase the contact area between the source gas and the substrate 9, and thus improve the deposition efficiency and uniformity.

[0024] The porous gas distribution plate 4 is located in the deposition chamber 5, and can further evenly distribute the source gas into the entire deposition chamber 5, thereby reducing the uneven distribution of the source gas.

[0025] Wind guide blades 6 are arranged on both sides of the inner wall of the deposition chamber 5 to further adjust the flow direction of the source gas in the deposition chamber 5, ensuring that the source gas can flow evenly through the entire deposition chamber 5, including the vicinity of the base, thereby solving the problem of uneven tungsten deposition thickness on the substrate 9.

[0026] The outer shell of the deposition chamber 5 is made of stainless steel or heat-resistant steel, which can withstand the erosion of high temperature and corrosive gas to ensure the stable operation of the deposition furnace.

[0027] At least one inner cylinder 7 is provided, and a substrate 9 is sleeved on the outer wall of each inner cylinder 7. By providing the substrate 9, tungsten will not directly contact the inner cylinder 7 after tungsten deposition, so that the inner cylinder 7 can be used repeatedly, and the substrate 9 can be directly removed when the deposited tungsten is removed, which greatly shortens the operation time.

[0028] Working principle:

[0029] After the source gas enters the deposition chamber 5 from the gas inlet 1 , it is dispersed by the rotating blades 3 and the porous gas distribution plate 4 and evenly distributed in the entire deposition chamber 5 .

[0030] The air guide blades 6 further adjust the flow direction of the source gas to ensure that the source gas can flow evenly through the surface of the substrate 9 to achieve uniform deposition.

[0031] After the deposition is completed, the exhaust gas is discharged from the outlet 8, and a uniform and dense tungsten coating is formed on the substrate 9. Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device that includes a series of elements includes not only those elements, but also other elements that are not explicitly listed, or also includes elements that are inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the presence of other identical elements in the process, method, article or device that includes the elements.

[0032] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A deposition furnace device for preparing tungsten crucibles by CVD process, characterized in that: The invention comprises a deposition chamber (5), an air inlet (1) and an air outlet (8) installed on the outer shell of the deposition chamber (5), a rotating blade (3) and a porous air distribution plate (4) installed on the inner wall of the deposition chamber (5), and an inner cylinder (7) installed at the bottom of the deposition chamber (5); a mixing chamber (2) is arranged above the deposition chamber (5).

2. The deposition furnace device for preparing tungsten crucible by CVD process according to claim 1, characterized in that: The air inlet (1) is located above the deposition chamber (5), and the air outlet (8) is located below the deposition chamber (5).

3. The deposition furnace device for preparing tungsten crucible by CVD process according to claim 1, characterized in that: The rotating blades (3) are located above the porous air distribution plate (4).

4. The deposition furnace device for preparing tungsten crucible by CVD process according to claim 1, characterized in that: Air guide blades (6) are provided on both sides of the inner wall of the deposition chamber (5), and at least one air guide blade (6) is provided.

5. The deposition furnace device for preparing tungsten crucible by CVD process according to claim 1, characterized in that: The outer shell of the deposition chamber (5) is made of stainless steel or heat-resistant steel.

6. The deposition furnace device for preparing tungsten crucible by CVD process according to claim 1, characterized in that: At least one inner cylinder (7) is provided, and a base (9) is sleeved on the outer wall of each inner cylinder (7).

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