Semiconductor ion implantation equipment and system
By setting multiple grooves on the insulating assembly of the semiconductor ion implantation device, the problem of equipment short circuit is solved, the filament usage time is extended, the equipment usage efficiency is improved, and the maintenance cost is reduced.
Patent Information
- Application Number
- CN202421869486.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-02
- Publication Date
- 2025-05-13
- Estimated Expiration
- 2034-08-02
AI Technical Summary
The surface of the insulating components of existing semiconductor ion implantation devices is prone to accumulate metal attachments, resulting in short circuits, reducing equipment usage efficiency and increasing maintenance costs.
A plurality of grooves are provided on the first insulating assembly and/or the second insulating assembly to increase the contact area of the insulating assembly and avoid short circuits caused by metal attachments.
By increasing the contact area of the insulating components, avoiding short circuits, extending the filament usage time, improving the efficiency of ion implantation equipment, and reducing maintenance costs.
Smart Images
Figure CN222867617U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor ion implantation device and system. Background Art
[0002] Ion implantation is a method of introducing a controlled amount of impurities into a silicon substrate to change its electrical properties. Ion implanters are important manufacturing process equipment used to perform ion doping in the manufacturing process of integrated circuits.
[0003] The existing ion implanter includes a filament and an insulating component mounted on two pins of the filament. The insulating components on both sides of the filament have smooth surfaces and are very close to each other. During the use of the ion implanter, metal attachments will continue to accumulate on the surface of the insulating components. When the accumulation reaches a certain level, the insulating components on both sides will directly contact and cause a short circuit, causing the filament current to fluctuate and the machine to fail to operate. At the same time, since the leakage current causes the load to increase, there is a risk of overload and burnout of the power supply. Therefore, the ion implanter needs to be frequently repaired, and the utilization efficiency of the ion implanter is very low.
[0004] Therefore, how to improve the use efficiency of semiconductor ion implantation equipment and reduce costs is a technical problem that needs to be solved urgently by those skilled in the art. Utility Model Content
[0005] The purpose of the present application is to provide a semiconductor ion implantation device to improve the use efficiency of the semiconductor ion implantation device and reduce the cost.
[0006] Another object of the present application is to provide a semiconductor ion implantation system to improve the utilization efficiency of semiconductor ion implantation equipment and reduce costs.
[0007] In order to achieve the above purpose, the technical solution adopted in this application is as follows:
[0008] On the one hand, the present application provides a semiconductor ion implantation device, the semiconductor ion implantation device comprising a filament and an insulating component, the filament comprising a first pin and a second pin, the insulating component comprising a first insulating component, a second insulating component and a third insulating component; wherein one end of the first insulating component is sleeved on the first pin, one end of the second insulating component is sleeved on the second pin, and the other end of the first insulating component and the other end of the second insulating component are connected through the third insulating component;
[0009] A plurality of grooves are provided on a side of the first insulating component opposite to the second insulating component and / or a plurality of grooves are provided on a side of the second insulating component opposite to the first insulating component.
[0010] Further, a plurality of grooves are arranged on a side of the first insulating component relative to the second insulating component along a direction perpendicular to the third insulating component and / or a plurality of grooves are arranged on a side of the second insulating component relative to the first insulating component along a direction perpendicular to the third insulating component, and a plurality of grooves are close to the third insulating component.
[0011] Further, when a plurality of grooves are provided on opposite sides of the first insulating component and the second insulating component, the number of grooves provided on the first insulating component is equal to the number of grooves provided on the second insulating component.
[0012] Furthermore, the number of grooves arranged on the first insulating component and the second insulating component is 4.
[0013] Furthermore, a plurality of grooves are provided on a side of the third insulating component close to the filament.
[0014] Furthermore, the grooves are square wave shaped, and a plurality of grooves are arranged at intervals.
[0015] Furthermore, the groove has a width of 0.5 to 1.5 mm and a depth of 0.5 to 1.5 mm.
[0016] Furthermore, the groove has a width of 1 mm and a depth of 1 mm.
[0017] Furthermore, the groove is sawtooth-shaped, and a plurality of grooves are arranged at intervals or continuously.
[0018] On the other hand, the present application also provides a semiconductor ion implantation system, which includes a semiconductor ion implantation device as described in any of the aforementioned embodiments.
[0019] Compared with the prior art, this application has the following beneficial effects:
[0020] The present application provides a semiconductor ion implantation device and system. By providing a plurality of grooves on the first insulating component and / or the second insulating component, the contact area of the entire insulating component is increased. Even if part of the metal powder adheres to the side wall of the insulating component, the insulating effect of the plurality of grooves will cause the conductive surface of the insulating component to have a fault, thereby avoiding a short circuit between the first insulating component and the second insulating component, increasing the service life of the filament and improving the efficiency of the ion implantation device. In addition, the present application utilizes the existing insulating component for modification, and can prevent the metal objects attached to the surface of the first insulating component and the second insulating component from contacting and causing a short circuit without changing the original main structure of the ion implantation device, thereby greatly reducing the modification cost.
[0021] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians of the art without making creative work are within the scope of protection of the present application.
[0023] Figure 1 It is a structural schematic diagram of a semiconductor ion implantation device in the prior art;
[0024] Figure 2 This is one of the structural schematic diagrams of a semiconductor ion implantation device provided in this application;
[0025] Figure 3 This is a second structural schematic diagram of a semiconductor ion implantation device provided in this application;
[0026] Figure 4 The third structural schematic diagram of a semiconductor ion implantation device provided in this application;
[0027] Figure 5 This is the fourth structural schematic diagram of a semiconductor ion implantation device provided in this application.
[0028] Reference numerals: 10 - semiconductor ion implantation equipment; 110 - filament; 120 - first insulating component; 130 - second insulating component; 140 - third insulating component; 150 - groove. DETAILED DESCRIPTION
[0029] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.
[0030] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0031] In the description of this application, it should be noted that relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. The term "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium.
[0032] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.
[0033] See also Figure 1 As described in the background art, the existing semiconductor ion implantation equipment includes a filament and an insulating component sleeved on two pins of the filament. Under normal circumstances, the filament in the ion implantation machine can be used for 400 hours.
[0034] However, the applicant has found that the insulating components on both sides of the filament have smooth surfaces and are easy to adhere to coatings, and the distance between the insulating components on both sides of the filament is very close. Therefore, during the use of the ion implanter, metal attachments will continue to accumulate on the surfaces of the insulating components on both sides of the filament. As the metal attachments at the insulating components A and B continue to increase, the distance between the insulating components on both sides of the filament will continue to shorten, and eventually the insulating components on the left and right sides will directly contact and cause a short circuit, so that the filament can only be used for 260 hours before it needs to be shut down for maintenance, and the use efficiency of the ion implanter is low and the maintenance cost is high.
[0035] Therefore, how to improve the use efficiency of semiconductor ion implantation equipment and reduce costs is a technical problem that needs to be solved urgently by those skilled in the art.
[0036] To solve the above technical problems, please refer to Figure 2 The embodiment of the present application provides a semiconductor ion implantation device 10, which includes a filament 110 and an insulating component. The filament 110 includes a first pin and a second pin, and the insulating component includes a first insulating component 120, a second insulating component 130 and a third insulating component 140.
[0037] In the embodiment of the present application, one end of the first insulating component 120 is sleeved on the first pin, one end of the second insulating component 130 is sleeved on the second pin, and the other end of the first insulating component 120 and the other end of the second insulating component 130 are connected through the third insulating component 140.
[0038] The first insulating component 120 is provided with a plurality of grooves 150 on one side relative to the second insulating component 130 and / or the second insulating component 130 is provided with a plurality of grooves 150 on one side relative to the first insulating component 120. For example, the first insulating component 120 is provided with a plurality of grooves 150 on one side relative to the second insulating component 130, the second insulating component 130 is provided with a plurality of grooves 150 on one side relative to the first insulating component 120, and the first insulating component 120 and the second insulating component 130 are both provided with a plurality of grooves 150 on opposite sides.
[0039] Based on the above design, by providing a plurality of grooves 150 on the first insulating component 120 and / or the second insulating component 130, the contact area of the entire insulating component is increased. Even if some metal powder is attached to the side wall of the insulating component, the insulating effect of the plurality of grooves 150 will cause the conductive surface of the insulating component to have a fault, thereby avoiding the first insulating component 120 and the second insulating component 130 from being short-circuited, increasing the service life of the filament 110, and improving the service efficiency of the ion implantation equipment. In addition, the embodiment of the present application utilizes the existing insulating component for modification, and can prevent the metal objects attached to the surface of the first insulating component 120 and the second insulating component 130 from contacting and causing a short circuit without changing the original main structure of the ion implantation equipment, thereby greatly reducing the modification cost.
[0040] Since the surface of the insulating component in the prior art is smooth, the metal attachments can easily slide down the first insulating component 120 and the second insulating component 130 to the bottom (i.e., the position close to the third insulating component 140). Therefore, in order to further prevent the first insulating component 120 and the second insulating component 130 from being connected through the metal attachments, as an optional embodiment, a plurality of grooves 150 are arranged on one side of the first insulating component 120 relative to the second insulating component 130 along a direction perpendicular to the third insulating component 140 and / or a plurality of grooves 150 are arranged on one side of the second insulating component 130 relative to the first insulating component 120 along a direction perpendicular to the third insulating component 140. In addition, the plurality of grooves 150 are close to the third insulating component 140.
[0041] In the embodiment of the present application, the plurality of grooves 150 may be separately provided on the first insulating component 120 , may be separately provided on the second insulating component 130 , or may be provided on both the first insulating component 120 and the second insulating component 130 .
[0042] When a plurality of grooves 150 are provided on opposite sides of the first insulating component 120 and the second insulating component 130, in order to better prevent conduction between the first insulating component 120 and the second insulating component 130, as an optional embodiment, the number of grooves 150 provided on the first insulating component 120 is equal to the number of grooves 150 provided on the second insulating component 130.
[0043] Optionally, the number of grooves 150 provided on the first insulating component 120 and the second insulating component 130 may be 3 to 5. Preferably, the number of grooves 150 provided on the first insulating component 120 and the second insulating component 130 are both 4.
[0044] It should be noted that, in the embodiment of the present application, the shape of the groove 150 is not limited and can be set according to actual application requirements. For example, according to the size of the insulating component, the shape of the groove 150 can be square wave or sawtooth.
[0045] As an optional embodiment, when the groove 150 is as follows Figure 2 In the case of the square wave type shown, a plurality of grooves 150 are arranged at intervals. Optionally, each groove 150 has a width of 0.5 to 1.5 mm and a depth of 0.5 to 1.5 mm.
[0046] Preferably, each groove 150 has a width of 1 mm and a depth of 1 mm.
[0047] As another implementation, see Figure 3 and Figure 4 When the groove 150 is sawtooth-shaped, the plurality of grooves 150 may be as follows Figure 3The spacing shown is arranged on one side of the first insulating component 120 relative to the second insulating component 130 and / or on one side of the second insulating component 130 relative to the first insulating component 120. In addition, the plurality of grooves 150 can also be as shown in FIG. Figure 4 As shown, the first insulating component 120 is continuously disposed on a side of the second insulating component 130 and / or a side of the second insulating component 130 is disposed on a side of the first insulating component 120 .
[0048] In addition, to further increase the contact area of the entire insulation assembly, refer to Figure 5 As a feasible implementation, a plurality of grooves 150 are provided on one side of the third insulating component 140 close to the filament 110. The number and shape of the grooves 150 can be set according to the size of the third insulating component 140 in actual application.
[0049] Optionally, an embodiment of the present application further provides a semiconductor ion implantation system, which includes the semiconductor ion implantation device 10 as described in any of the aforementioned embodiments.
[0050] In summary, the embodiments of the present application provide a semiconductor ion implantation device and system. The semiconductor ion implantation device includes a filament and an insulating component. The filament includes a first pin and a second pin, and the insulating component includes a first insulating component, a second insulating component and a third insulating component. One end of the first insulating component is sleeved on the first pin, one end of the second insulating component is sleeved on the second pin, and the other end of the first insulating component and the other end of the second insulating component are connected through the third insulating component. The first insulating component is provided with a plurality of grooves on one side relative to the second insulating component and / or the second insulating component is provided with a plurality of grooves on one side relative to the first insulating component.
[0051] By providing a plurality of grooves on the first insulating component and / or the second insulating component, the contact area of the entire insulating component is increased. Even if some metal powder is attached to the side wall of the insulating component, the insulating effect of the plurality of grooves will cause the conductive surface of the insulating component to have a fault, thereby avoiding a short circuit between the first insulating component and the second insulating component, increasing the service life of the filament, and improving the efficiency of the ion implantation device. In addition, the present application utilizes the existing insulating component for modification, and can prevent the metal objects attached to the surface of the first insulating component and the second insulating component from contacting and causing a short circuit without changing the original main structure of the ion implantation device, thereby greatly reducing the modification cost.
[0052] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
[0053] It will be apparent to those skilled in the art that the present application is not limited to the details of the exemplary embodiments described above, and that the present application can be implemented in other specific forms without departing from the spirit or essential features of the present application. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present application. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.
Claims
1. A semiconductor ion implantation device, characterized in that: The semiconductor ion implantation device comprises a filament and an insulating component, wherein the filament comprises a first pin and a second pin, and the insulating component comprises a first insulating component, a second insulating component and a third insulating component; wherein one end of the first insulating component is sleeved on the first pin, one end of the second insulating component is sleeved on the second pin, and the other end of the first insulating component and the other end of the second insulating component are connected via the third insulating component; A plurality of grooves are provided on a side of the first insulating component opposite to the second insulating component and / or a plurality of grooves are provided on a side of the second insulating component opposite to the first insulating component.
2. The semiconductor ion implantation device according to claim 1, characterized in that: A plurality of grooves are arranged on a side of the first insulating component relative to the second insulating component along a direction perpendicular to the third insulating component and / or a plurality of grooves are arranged on a side of the second insulating component relative to the first insulating component along a direction perpendicular to the third insulating component, and a plurality of grooves are close to the third insulating component.
3. The semiconductor ion implantation device according to claim 1, characterized in that: When a plurality of grooves are provided on opposite sides of the first insulating component and the second insulating component, the number of grooves provided on the first insulating component is equal to the number of grooves provided on the second insulating component.
4. The semiconductor ion implantation device according to claim 3, characterized in that: The number of grooves arranged on the first insulating component and the second insulating component is 4.
5. The semiconductor ion implantation device according to claim 1, characterized in that: A plurality of grooves are provided on a side of the third insulating component close to the filament.
6. The semiconductor ion implantation device according to claim 1 or 5, characterized in that: The grooves are square wave shaped, and a plurality of grooves are arranged at intervals.
7. The semiconductor ion implantation device according to claim 6, characterized in that: The width of the groove is 0.5-1.5 mm, and the depth is 0.5-1.5 mm.
8. The semiconductor ion implantation device according to claim 7, characterized in that: The width of the groove is 1 mm and the depth is 1 mm.
9. The semiconductor ion implantation device according to claim 1 or 5, characterized in that: The grooves are sawtooth-shaped, and a plurality of grooves are arranged at intervals or continuously.
10. A semiconductor ion implantation system, characterized in that: The semiconductor ion implantation system comprises the semiconductor ion implantation apparatus according to any one of claims 1 to 9.