Wet cleaning device

Abstract

The utility model discloses a wet cleaning device which comprises a rotary table arranged in a cavity, a groove body arranged around the rotary table and an ultrasonic oscillation module arranged on the groove body. The tank body is used for loading medium liquid flowing circularly, and the liquid level of the medium liquid rises to immerse a treatment object placed on the top of the rotary table before a cleaning process is carried out; the rotary table is used for enabling the processing object immersed in the medium liquid to rotate; the ultrasonic oscillation module is used for enabling the processing object immersed in the medium liquid to vibrate. According to the utility model, the enhancement effect of removing surface particles can be achieved, and defects caused by cleaning on the surface of a treated object are avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a wet cleaning device. Background Art

[0002] The wafer brushing machine in the wet cleaning equipment mainly uses carbon dioxide water to wash the wafer surface in the process to remove particles on the wafer surface. However, when there are large particles attached to the wafer surface, especially stubborn particles with strong adhesion, they are easily impacted by the water flow to form linear or fan-shaped distribution pattern defects.

[0003] Therefore, it is necessary to provide a new wet cleaning device to solve the above problems existing in the prior art. Utility Model Content

[0004] The purpose of the utility model is to overcome the above-mentioned defects in the prior art and provide a wet cleaning device.

[0005] To achieve the above purpose, the technical solution of the utility model is as follows:

[0006] The utility model provides a wet cleaning device, comprising: a turntable arranged in a cavity, a tank body arranged around the turntable, and an ultrasonic oscillation module arranged on the tank body;

[0007] The tank body is used to load the circulating medium liquid, and before the cleaning process is performed, the liquid level of the medium liquid is raised to immerse the treatment object placed on the top of the turntable;

[0008] The turntable is used to rotate the processing object immersed in the medium liquid;

[0009] The ultrasonic vibration module is used to vibrate the treatment object immersed in the medium liquid and rotating.

[0010] Furthermore, the tank body is provided with a liquid inlet and a liquid outlet, the liquid inlet is used to introduce the medium liquid into the tank body, and the liquid outlet is used to discharge the medium liquid in the tank body.

[0011] Further, the liquid inlet is arranged on the bottom of the tank body, the liquid inlet is provided with a flow control valve, the liquid discharge port includes a first liquid discharge port arranged on the bottom of the tank body, and a second liquid discharge port and a third liquid discharge port arranged on the side wall of the tank body from bottom to top, the first liquid discharge port is provided with a first switch valve, the second liquid discharge port is provided with a second switch valve, and the third liquid discharge port is provided with a third switch valve; wherein, in standby mode, the flow control valve is opened, the first switch valve is closed, and the second switch valve is opened, so as to keep the liquid level of the medium liquid introduced Before the cleaning process is performed below the top of the vacant turntable, the flow control valve is opened, the first switch valve and the second switch valve are closed, and the third switch valve is opened, so as to raise the liquid level of the introduced medium liquid to the level that will immerse the treatment object that is transferred and placed on the top of the turntable. When the cleaning process is performed, the flow control valve is closed, and the first switch valve and the second switch valve are opened, so as to lower the liquid level of the medium liquid in the tank body to below the top of the turntable, so as to clean the treatment object with the surface exposed.

[0012] Furthermore, the second liquid discharge port is arranged on the side wall of the trough body below the top of the turntable, and the third liquid discharge port is arranged on the side wall of the trough body above the top of the turntable, and is located above the surface of the processing object when the processing object is placed.

[0013] Furthermore, it also includes a splash shield, which is arranged in the cavity and around the turntable, the trough body is located on the inner side of the splash shield, and the top height of the splash shield is higher than the top height of the trough body; and / or, the ultrasonic oscillation module includes an ultrasonic oscillator arranged at the bottom of the trough body; and / or, a clamp is provided on the top of the turntable for clamping and fixing the processing object transferred to it.

[0014] Furthermore, along the horizontal direction, the splash guard includes one to multiple layers, and when the splash guard is multiple layers, the top height of each layer of the splash guard increases sequentially from the inside to the outside.

[0015] Furthermore, the turntable is a lifting turntable, and the lifting turntable is used to rise when performing a cleaning process so that the placed processing object is located between the top of the trough body and the top of the splash cover.

[0016] Furthermore, a liquid level sensor is provided in the tank body, and the liquid level sensor is respectively arranged on the upper and lower sides of the second liquid discharge port and on the upper side of the third liquid discharge port.

[0017] Furthermore, the liquid inlet is provided with a carbon dioxide generator.

[0018] Furthermore, a water resistance meter is provided in the tank body.

[0019] It can be seen from the above technical scheme that the utility model sets a trough body surrounding the turntable in the cavity for loading a circulating dielectric liquid in the trough body. Before the processing object (such as a wafer) is transferred to the top of the turntable for cleaning, the liquid level of the dielectric liquid is raised to immerse the surface of the processing object, and the turntable is rotated and the ultrasonic oscillation module is operated to vibrate the processing object immersed in the dielectric liquid and rotating. The larger particles attached to the surface of the processing object and the stubborn particles with strong adhesion can be shattered and floated away from the processing object under the combined action of the ultrasonic vibration force and the buoyancy of the dielectric liquid, and then carried out of the cavity by the circulating dielectric liquid, thereby achieving an enhanced effect of removing surface particles and avoiding linear or fan-shaped distribution graphic defects on the surface of the processing object. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 The figure is a schematic structural diagram of a wet cleaning device according to a preferred embodiment of the utility model.

[0021] Figure 2-Figure 4 The figure is a schematic diagram of the working state of a wet cleaning device according to a preferred embodiment of the present invention.

[0022] Figure 5 Schematic diagram of the morphological changes of particles on the wafer surface before and after ultrasonic treatment. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the utility model belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0024] The specific implementation of the utility model is further described in detail below in conjunction with the accompanying drawings.

[0025] refer to Figure 1 and Figure 3The wet cleaning device of the utility model comprises a cavity 10 , a turntable 13 (rotating platform) arranged in the cavity 10 , a tank 12 arranged around the turntable 13 , and an ultrasonic oscillation module 19 arranged on the tank 12 .

[0026] The chamber 10 is used to perform a wet cleaning process on a processing object (such as a wafer 100 , hereinafter referred to as the processing object) placed therein.

[0027] The turntable 13 is used to place the wafer 100 being transferred thereto through the top, and can drive the wafer 100 to rotate horizontally.

[0028] The tank body 12 is used to load the circulating dielectric liquid 11 (i.e., the dielectric liquid 11 is in a flow state of being introduced and discharged simultaneously in the tank body 12). Moreover, when the wafer 100 is transferred to the top of the turntable 13 and before the cleaning process is performed, the liquid level of the dielectric liquid 11 in the tank body 12 can be raised by continuously introducing the dielectric liquid 11 into the tank body 12 at a large flow rate and discharging the dielectric liquid 11 at a small flow rate, that is, the loading amount of the dielectric liquid 11 in the tank body 12 is increased until the upper surface of the wafer 100 placed on the top of the turntable 13 is immersed, so that the dielectric liquid 11 loaded in the tank body 12 can directly contact with the wafer 100, such as Figure 3 shown.

[0029] The ultrasonic oscillation module 19 is used to vibrate the wafer 100 which is immersed in the dielectric liquid 11 and rotated by the turntable 13 .

[0030] Therefore, by providing a tank body 12 surrounding the turntable 13 in the cavity 10, before performing the conventional cleaning process, the medium liquid 11 can be introduced into the tank body 12 to make the liquid level of the medium liquid 11 rise to immerse the entire wafer 100, and the turntable 13 is rotated and the ultrasonic oscillation module 19 is operated, so that the wafer 100 immersed in the medium liquid 11 and rotating generates vibration, so that the larger particles attached to the surface of the wafer 100 and the stubborn particles with strong adhesion can be broken and floated off the wafer 100 under the combined action of the ultrasonic vibration force and the buoyancy of the medium liquid 11, as shown in FIG. Figure 5 As shown, the particles are then taken out of the cavity 10 by the circulating medium liquid 11, so that the enhanced effect of removing surface particles can be achieved. That is, by pre-treating the removal of larger particles and stubborn particles with strong adhesion attached to the surface of the wafer 100 before the conventional cleaning process, it is effectively avoided that the water flow impacts the surface of the wafer 100 that has not been pre-treated to remove particles in the subsequent conventional cleaning process, and linear or fan-shaped pattern defects are caused on the surface of the wafer 100, that is, the defects caused by cleaning on the surface of the wafer 100 are avoided. Thus, the shortcomings of the prior art are overcome.

[0031] refer to Figure 1 In some embodiments, the tank body 12 is provided with a liquid inlet 22 and a liquid outlet 18 . The liquid inlet 22 is used to introduce the medium liquid 11 into the tank body 12 ; the liquid outlet 18 is used to discharge the medium liquid 11 in the tank body 12 .

[0032] In some embodiments, the liquid inlet 22 is disposed on the bottom of the tank body 12 (cavity 10). The liquid discharge port 18 includes a first liquid discharge port 181 disposed on the bottom of the tank body 12 (cavity 10), and a second liquid discharge port 182 and a third liquid discharge port 183 disposed on the side wall of the tank body 12 from bottom to top.

[0033] In some embodiments, a flow control valve 20 is provided on the liquid inlet 22 for regulating and controlling the flow of the medium liquid 11 entering the tank body 12 through the liquid inlet 22 , and also includes opening and closing control of the liquid inlet 22 .

[0034] In some embodiments, the first to third drain ports 181 to 183 are provided with switch valves 16. The switch valves 16 include a first switch valve 161 provided on the first drain port 181, a second switch valve 162 provided on the second drain port 182, and a third switch valve 163 provided on the third drain port 183. The first to third switch valves 161 to 163 are used to control the opening or closing of the first to third drain ports 181 to 183.

[0035] By means of a conventional controller provided on the wet cleaning device, the opening of the flow control valve 20 of the liquid inlet 22 and the opening and closing of the switch valves of each liquid discharge port can be controlled, thereby realizing the combined control of the opening and closing states of the liquid inlet 22 and each liquid discharge port. In this way, the liquid level of the medium liquid 11 loaded in the tank body 12 can be controlled to rise, fall or be maintained at a certain height, thereby realizing the dynamic adjustment of the liquid level height of the medium liquid 11 loaded in the tank body 12 by utilizing the difference in the flow state of the medium liquid 11.

[0036] refer to Figure 2-Figure 4 Combined with reference Figure 1 In some embodiments, when in standby mode, the flow control valve 20 on the liquid inlet 22 is controlled to be in an open state, the first switch valve 161 on the first liquid discharge port 181 is in a closed state, and the second switch valve 162 on the second liquid discharge port 182 is in an open state (the third switch valve 163 on the third liquid discharge port 183 can be opened or closed), so that the liquid level of the dielectric liquid 11 introduced through the liquid inlet 22 is maintained at a height position below the top of the empty turntable 13, that is, the dielectric liquid 11 is in a low liquid level state, so that the top of the turntable 13 is exposed from the liquid level of the dielectric liquid 11, so that the robot can transfer the wafer 100 to the top of the turntable 13, as shown in FIG. Figure 2shown.

[0037] After the wafer 100 is transferred to the top of the turntable 13 and before the cleaning process is performed, the flow control valve 20 is controlled to be in an open state, the first switch valve 161 and the second switch valve 162 are in a closed state, and the third switch valve 163 is in an open state, so that the liquid level of the medium liquid 11 introduced rises to the level that can immerse the wafer 100 transferred and placed on the top of the turntable 13, that is, the medium liquid 11 is in a high liquid level state where the liquid level is higher than the upper surface of the wafer 100. At this time, the controller can be used to control the turntable 13 to rotate, and the ultrasonic oscillation module 19 can be controlled to start, so as to pre-treat the larger particles attached to the surface of the wafer 100 and the stubborn particles with strong adhesion to remove them, such as Figure 3 shown.

[0038] After the pretreatment is completed, when the cleaning process is performed, the flow control valve 20 is controlled to be in a closed state, and the first switch valve 161 and the second switch valve 162 are in an open state, so that the liquid level of the medium liquid 11 in the tank body 12 is rapidly reduced to below the top of the turntable 13, that is, the liquid level of the medium liquid 11 loaded in the tank body 12 is reduced from a high liquid level state to a low liquid level state, and is maintained in a dynamic equilibrium state below the top of the turntable 13. At this time, the cleaning liquid can be sprayed on the surface of the wafer 100 through the upper nozzle, and the exposed surface of the wafer 100 can be cleaned in the subsequent steps, such as Figure 4 shown.

[0039] refer to Figure 1 In some embodiments, the liquid inlet 22 and the first liquid outlet 181 are disposed on the bottom of the tank body 12 on both sides of the turntable 13 .

[0040] The second drain port 182 is disposed on the side wall of the tank 12 below the top of the turntable 13. The third drain port 183 is disposed on the side wall of the tank 12 above the top of the turntable 13 and is located above the upper surface of the wafer 100 when the wafer 100 is placed on the top of the turntable 13.

[0041] In some embodiments, the diameter of the liquid inlet 22 and the diameter of the first liquid outlet 181 to the third liquid outlet 183 are at least 3 / 4 inches (hexagonal pipe).

[0042] In some embodiments, a splash shield 15 is further provided in the cavity 10. The splash shield 15 is provided around the turntable 13, and the tank body 12 is located inside the splash shield 15. The top height of the splash shield 15 is higher than the top height of the tank body 12.

[0043] In some embodiments, the ultrasonic oscillation module 19 is disposed on the bottom of the tank body 12. When the ultrasonic oscillation module 19 is working, the ultrasonic oscillation energy can be quickly transmitted to the medium liquid 11 and the wafer 100 through the tank wall of the tank body 12 and the turntable 13 disposed on the bottom of the tank body 12, so that the wafer 100 generates self-vibration under the vibration energy transmitted by the turntable 13, and resonates under the vibration generated by the medium liquid 11 receiving the transmitted vibration energy, so that under the superposition of double vibrations, the larger particles attached to the surface of the wafer 100 and the stubborn particles with strong adhesion can be well removed.

[0044] In some embodiments, the ultrasonic oscillation module 19 includes an ultrasonic oscillator disposed on the bottom of the tank 12 .

[0045] In some embodiments, the power of the ultrasonic oscillator is 60 to 800 watts.

[0046] In some embodiments, the tank body 12 is made of quartz or other shock-resistant materials.

[0047] In some embodiments, a clamp 14 is provided on the top of the turntable 13 for clamping and fixing the wafer 100 transferred thereto.

[0048] In some embodiments, the turntable 13 is connected to a rotating mechanism below. When the rotating mechanism is driven (for example, driven by a rotating motor located outside the bottom of the chamber 10), it can drive the turntable 13 to rotate horizontally, thereby driving the wafer 100 placed on the top of the turntable 13 and clamped on the fixture 14 to rotate horizontally synchronously for pretreatment to remove particles and subsequent cleaning processes.

[0049] In some embodiments, the turntable 13 includes a lifting turntable. The lifting turntable is used to lift up during the cleaning process after the pretreatment for removing particles, so that the wafer 100 clamped on the fixture 14 is between the top of the tank body 12 and the top of the splash shield 15 (refer to Figure 4 ), and in the initial state after descent when on standby and performing pretreatment for removing particles.

[0050] In some embodiments, the turntable 13 is connected to the lifting mechanism via a rotating mechanism; the rotating mechanism and the lifting mechanism are arranged outside the bottom of the cavity 10 (tank body 12).

[0051] In some embodiments, the splash shield 15 is provided in one layer (one layer) in the horizontal direction, that is, a splash shield 15 is provided around the turntable 13 .

[0052] In some embodiments, the splash shield 15 is multi-layered in the horizontal direction, that is, the turntable 13 is surrounded by a plurality of splash shields 15 from the inside to the outside, and the top height of each layer of the splash shield 15 increases from the inside to the outside. Figure 1-Figure 4 exemplarily shows a structure in which two layers of splash guards 15 are provided on the outer side of the tank body 12 , including a two-layer splash guard structure of an inner splash guard 151 and an outer splash guard 152 .

[0053] In some embodiments, the medium liquid 11 includes deionized water or a carbon dioxide aqueous solution (carbon dioxide water).

[0054] In some embodiments, a plurality of liquid level sensors are provided in the tank body 12 for correspondingly detecting the liquid level state of the medium liquid 11 in the tank body 12. For example, each liquid level sensor is provided at the upper and lower sides of the second liquid discharge port 182 and the upper side of the third liquid discharge port 183 to form high, medium and low liquid level detection.

[0055] In some embodiments, the liquid level sensor may be a capacitive liquid level sensor or a nitrogen blowing liquid level sensor.

[0056] In some embodiments, the liquid inlet 22 is connected to the liquid inlet pipeline 21 ; the liquid inlet pipeline 21 is used to introduce the medium liquid 11 , such as deionized water, into the tank body 12 through the liquid inlet 22 .

[0057] In some embodiments, the first to third drain ports 181 to 183 are connected to a drain pipe 17 ; the medium liquid 11 discharged from the first to third drain ports 181 to 183 is recovered through the drain pipe 17 for recycling.

[0058] In some embodiments, the liquid inlet 22 is provided with a carbon dioxide generator to ensure the replenishment of carbon dioxide water. For example, the carbon dioxide generator is provided on the liquid inlet pipeline 21 to inject carbon dioxide into the deionized water flowing through the liquid inlet pipeline 21 to further form a carbon dioxide aqueous solution as the medium liquid 11.

[0059] In some embodiments, a water resistance meter is provided in the tank body 12. The water resistance meter is used to detect the water resistance of the carbon dioxide aqueous solution as the medium liquid 11, so as to adjust and control the carbon dioxide generation amount of the carbon dioxide generator accordingly.

[0060] In some embodiments, the water resistance of the carbon dioxide aqueous solution is set to 0.05 to 0.15 megohm / cm2.

[0061] The working method of the utility model includes:

[0062] refer to Figure 2. When in standby mode (i.e., no wafer 100 is clamped on the fixture 14), the turntable 13 is in the initial position after landing. The liquid inlet 22 is opened through the flow control valve 20, and the carbon dioxide generator can be opened at the same time to control the medium liquid 11 (carbon dioxide water) to enter the tank body 12 from the liquid inlet 22 at a smaller first flow rate, and the first switch valve 161 on the first liquid discharge port 181 is closed, and the second switch valve 162 on the second liquid discharge port 182 is opened, so that the first liquid discharge port 181 is in a closed state and the second liquid discharge port 182 is in an open state, so as to load a certain volume of the medium liquid 11 in the tank body 12, and because the second liquid discharge port 182 is in an open state, the medium liquid When the liquid level of the dielectric liquid 11 reaches the height of the second drain port 182, it can be discharged from the tank body 12 through the second drain port 182, so that the liquid level of the dielectric liquid 11 is always maintained below the top of the turntable 13, so that the clamp 14 on the top of the turntable 13 is exposed from the liquid level of the dielectric liquid 11, so that the robot can transfer the wafer 100 to the clamp 14 for clamping and fixing. In fact, the liquid level of the dielectric liquid 11 can be maintained at a low liquid level corresponding to the height of the second drain port 182, and a small flow rate of the dielectric liquid 11 can flow to maintain the cleanliness of the water quality and the low liquid level. The second switch valve 162 on the second drain port 182 plays the role of a low liquid level overflow drainage valve, that is, the second drain port 182 plays the role of low liquid level overflow drainage.

[0063] refer to Figure 3 When the wafer 100 is transferred to the fixture 14, in the case where there are large particles and stubborn particles with strong adhesion on the surface of the wafer 100, such as Figure 5 As shown in (a), it is necessary to pre-treat the surface of the wafer 100 to remove particles. The flow control valve 20 controls the dielectric liquid 11 to flow into the tank body 12 at a second flow rate greater than the first flow rate, and the first switch valve 161 and the second switch valve 162 are closed, and the third switch valve 163 is opened, so that the first drain port 181 and the second drain port 182 are in a closed state, and the third drain port 183 is in an open state, so that more volume of dielectric liquid 11 is loaded in the tank body 12, and because the third drain port 183 is in an open state, when the liquid level of the dielectric liquid 11 reaches the height of the third drain port 183, it can be discharged from the tank body 12 through the third drain port 183, in order to make the liquid level of the dielectric liquid 11 rise to immerse the surface of the wafer 100, and actually keep the liquid level of the dielectric liquid 11 at a high liquid level corresponding to the height of the third drain port 183. The third switch valve 163 functions as a high liquid level overflow drainage valve, that is, the third liquid discharge port 183 functions as a high liquid level overflow drainage valve.

[0064] At this time, the rotating mechanism is turned on to rotate the turntable 13, driving the wafer 100 on the turntable 13 to rotate slowly (the rotation speed is lower than the normal rotation speed during the cleaning process). At the same time, the ultrasonic oscillator is turned on to vibrate the wafer 100 immersed in the dielectric liquid 11 and rotating, so that the larger particles attached to the surface of the wafer 100 and the stubborn particles with strong adhesion are broken and floated off the wafer 100 under the combined action of the ultrasonic vibration force and the buoyancy of the dielectric liquid 11. Figure 5 As shown in (b), the particles are then carried out of the tank 12 by the circulating medium liquid 11, thereby achieving an enhanced effect of removing surface particles.

[0065] refer to Figure 4 . After the pretreatment of removing particles is completed, the cleaning process is entered. At this time, the flow control valve 20 is first used to control the liquid inlet 22 to be closed, and the first switch valve 161 and the second switch valve 162 are opened, so that the first drain port 181 and the second drain port 182 are in an open state, so that the liquid level of the medium liquid 11 in the tank body 12 drops rapidly until it is restored to a low liquid level below the top of the turntable 13, and the liquid level of the medium liquid 11 can be maintained. For example, when the low liquid level is reached, the first drain port 181 and the second drain port 182 can be closed. Alternatively, when the low liquid level is reached, the first drain port 181 can be closed, the second drain port 182 can be in an open state, and the first liquid inlet 22 can be opened to pass the first flow of the medium liquid 11, so that the liquid level of the medium liquid 11 in the tank body 12 is maintained at a low liquid level. Then, the lifting mechanism is started to raise the turntable 13, so that the wafer 100 rises to a position between the top of the tank body 12 and the top of the splash shield 15 (when the splash shield 15 is a multi-layer structure, for example Figure 1 In the case of the two-layer splash shield 15 structure shown, according to the process requirements, the wafer 100 can be raised to a position between the top of the tank body 12 and the top of the inner splash shield 151, or the wafer 100 can be raised to a position between the top of the inner splash shield 151 and the top of the outer splash shield 152), and then the upper nozzle can be opened to spray the cleaning liquid to start cleaning the exposed surface of the wafer 100. In this way, when the water flow during the cleaning process impacts the surface of the wafer 100, since the larger particles originally attached to the surface of the wafer 100 and the stubborn particles with strong adhesion have been removed, it is possible to effectively avoid linear or fan-shaped pattern defects on the surface of the wafer 100.

[0066] After cleaning, the wafer 100 is transferred out of the chamber 10 from the fixture 14, and the turntable 13 is lowered to the initial position, thereby restoring the wafer 100 to the initial position. Figure 2 The standby state is shown.

[0067] In some embodiments, the first flow rate is 5 to 10 liters / minute, and the second flow rate is 30 to 40 liters / minute.

[0068] The wet cleaning device of the utility model can be applied as a wafer brushing machine for removing particles on the surface of a wafer, or a cleaning device with a cleaning step for removing particles on the surface of a wafer and a chemical cleaning step.

[0069] In summary, the utility model sets a trough body 12 surrounding the turntable 13 in the cavity 10, which is used to load the circulating dielectric liquid 11 in the trough body 12. Before the wafer 100 is transferred to the top of the turntable 13 for cleaning, the liquid level of the dielectric liquid 11 is raised to immerse the surface of the wafer 100, and the turntable 13 is started to rotate and the ultrasonic oscillation module 19 is turned on to make the wafer 100 immersed in the dielectric liquid 11 and rotate vibrate, so that the larger particles attached to the surface of the wafer 100 and the stubborn particles with strong adhesion can be shattered and floated away from the wafer 100 under the combined action of the ultrasonic vibration force and the buoyancy of the dielectric liquid 11, and then carried out of the cavity 10 by the circulating dielectric liquid 11, thereby achieving an enhanced effect of removing surface particles and avoiding linear or fan-shaped graphic defects on the surface of the wafer 100.

[0070] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A wet cleaning device, characterized in that: include: A turntable arranged in the cavity, a tank body arranged around the turntable, and an ultrasonic oscillation module arranged on the tank body; The tank body is used to load the circulating medium liquid, and before the cleaning process is performed, the liquid level of the medium liquid is raised to immerse the treatment object placed on the top of the turntable; The turntable is used to rotate the processing object immersed in the medium liquid; The ultrasonic vibration module is used to vibrate the treatment object immersed in the medium liquid and rotating.

2. The wet cleaning device according to claim 1, characterized in that: The tank body is provided with a liquid inlet and a liquid outlet. The liquid inlet is used to introduce the medium liquid into the tank body, and the liquid outlet is used to discharge the medium liquid in the tank body.

3. The wet cleaning device according to claim 2, characterized in that: The liquid inlet is arranged on the bottom of the tank body, and a flow control valve is arranged on the liquid inlet. The liquid discharge port includes a first liquid discharge port arranged on the bottom of the tank body, and a second liquid discharge port and a third liquid discharge port arranged on the side wall of the tank body from bottom to top. The first liquid discharge port is provided with a first switch valve, the second liquid discharge port is provided with a second switch valve, and the third liquid discharge port is provided with a third switch valve; wherein, when in standby mode, the flow control valve is opened, the first switch valve is closed, and the second switch valve is opened, so as to keep the liquid level of the medium liquid introduced below the top of the vacant turntable. Before the cleaning process is performed, the flow control valve is opened, the first switch valve and the second switch valve are closed, and the third switch valve is opened, so as to raise the liquid level of the medium liquid introduced to immerse the treatment object transferred and placed on the top of the turntable. When the cleaning process is performed, the flow control valve is closed, and the first switch valve and the second switch valve are opened, so as to lower the liquid level of the medium liquid in the tank body to below the top of the turntable, so as to clean the treatment object exposed on the surface.

4. The wet cleaning device according to claim 3, characterized in that: The second liquid discharge port is arranged on the side wall of the trough body below the top of the turntable, and the third liquid discharge port is arranged on the side wall of the trough body above the top of the turntable and is located above the surface of the processing object when the processing object is placed.

5. The wet cleaning device according to claim 1, characterized in that: It also includes a splash shield, which is arranged in the cavity and around the turntable, the trough body is located on the inner side of the splash shield, and the top height of the splash shield is higher than the top height of the trough body; and / or the ultrasonic oscillation module includes an ultrasonic oscillator arranged at the bottom of the trough body; and / or a clamp is provided on the top of the turntable for clamping and fixing the processing object transferred to it.

6. The wet cleaning device according to claim 5, characterized in that: In the horizontal direction, the splash guard includes one to multiple layers, and when the splash guard includes multiple layers, the top heights of the splash guards of each layer increase sequentially from the inside to the outside.

7. The wet cleaning device according to claim 5, characterized in that: The turntable is a lifting turntable, and the lifting turntable is used to rise when performing a cleaning process so that the placed processing object is located between the top of the trough body and the top of the splash cover.

8. The wet cleaning device according to claim 3, characterized in that: A liquid level sensor is disposed in the tank body, and the liquid level sensor is disposed at the upper and lower sides of the second liquid discharge port and the upper side of the third liquid discharge port.

9. The wet cleaning device according to claim 2, characterized in that: The liquid inlet is provided with a carbon dioxide generator.

10. The wet cleaning device according to claim 9, characterized in that: A water resistance meter is arranged in the tank body.

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