Temperature control bias substrate device

By designing a temperature-controlled bias substrate device in PVD technology, the problems of slow deposition rate and poor film uniformity caused by too low substrate temperature are solved, and the effect of improving the deposition rate, film uniformity and binding force is achieved.

CN222878073UActive Publication Date: 2025-05-16JIANGSU CHIYU TECH CO LTD
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Patent Information

Application Number
CN202421846381.0
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-07-31
Publication Date
2025-05-16
Estimated Expiration
2034-07-31

AI Technical Summary

Technical Problem

In PVD technology, too low substrate temperature leads to slow deposition rate, poor film thickness and composition uniformity, and insufficient bonding force between the film layer and the substrate.

Method used

A temperature-controlled bias substrate device is designed, including mounting a driver and a heating member on the substrate flange, driving the sample seat and the sample body through the rotating shaft, and uniformly heating the sample body through the heating member, controlling the temperature to improve the deposition rate and film quality.

Benefits of technology

Through the temperature-controlled bias substrate device, the deposition rate and uniformity of the film are improved, the bonding force between the film layer and the substrate is enhanced, interface defects are reduced, and the conductivity and density of the film are improved.

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Abstract

The utility model relates to the technical field of film deposition, and particularly discloses a temperature control bias substrate device, which comprises a driver arranged on a substrate flange and a sample body positioned below a sample seat, the upper end of the sample seat is connected with a rotating shaft, the lower end of a bracket plate is provided with a heating piece, and the upper end of the bracket plate is connected with a shielding piece through a support shaft II; the temperature control bias substrate device uniformly heats a sample body through heating bulbs arranged in a surrounding manner, and an industrial personal computer reads thermocouple parameters to realize accurate temperature program control, so that the temperature of the sample can be controlled during deposition; the ion bombardment amount on the surface of the growing film can be controlled by applying bias voltage to the sample, the density and acceleration voltage of high-energy ions in plasma under a substrate support are increased, atoms penetrate into the surface of a substrate more deeply, and therefore the density of the film is improved; and the sample body is driven by the motor to control stepless variable-speed rotation, so that the film deposition uniformity is improved, a sample with a larger area can be deposited by using a small target material, and the efficiency is improved and the cost is reduced.
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Description

Technical Field

[0001] The utility model belongs to the technical field of thin film deposition, and in particular relates to a temperature-controlled bias substrate device. Background Art

[0002] PVD (Physical Vapor Deposition) technology can deposit high-purity and high-quality thin films in a high vacuum environment, reduce impurities and pollution, and ensure the purity and performance of the film. It is widely used in electronics, optics, machinery, aerospace, biomedicine and other fields. The development of PVD is an important part of the country's industrial progress, scientific and technological innovation and sustainable development strategy;

[0003] The substrate serves as the basis for thin film deposition in PVD, providing a base for the film to attach the sample, and affects the growth process and final properties of the film in many ways;

[0004] At present, there are still some problems in the process of PVD substrate technology:

[0005] (1) Slow deposition rate: When the substrate temperature is too low, the deposition rate is relatively slow, which will lead to reduced production efficiency and increased production costs.

[0006] (2) Poor uniformity: During the PVD process, due to the influence of factors such as the distance between the target and the substrate, the shape of the target, and the geometric shape of the substrate, the uniformity of the film thickness and composition may be poor, affecting the performance of the film.

[0007] (3) The bonding strength between the film layer and the substrate is insufficient, which may cause the film to fall off easily during subsequent processing or use. Utility Model Content

[0008] The purpose of the utility model is to provide a temperature-controlled bias substrate device to solve the problems raised in the above background technology.

[0009] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0010] A temperature-controlled bias substrate device, comprising:

[0011] A driver installed on the substrate flange and a sample body located below the sample holder, the upper end of the sample holder is connected to a rotating shaft, the rotating shaft is connected to the driver, the driver is provided to drive the sample holder and the sample body to rotate, which is beneficial to controlling the rotation speed of the sample body, and is beneficial to increasing the deposition area, and can effectively improve the uniformity of the film, the lower end of the substrate flange is connected to a bracket plate through a support shaft 1, the lower end of the bracket plate is provided with a heating element, which can uniformly heat the sample body, and can control the temperature of the sample body during deposition, the high temperature on the surface of the sample body can increase the deposition rate, reduce adsorbed oxygen and defect polarization, and thus improve the conductivity of the film, in-situ annealing can be performed after the deposition is completed, further enhancing the bonding force between the film and the substrate, reducing the interface defects between the two, and improving the film quality, the upper end of the bracket plate is connected to a shielding element through a support shaft 2, and a through hole matching the rotating shaft is provided inside the shielding element, which can play an insulating shielding role and is also beneficial to matching with the rotating shaft.

[0012] Preferably, the driver includes a driving motor, a magnetic fluid sealing transmission, a coupling 1 and a polytetrafluoroethylene coupling; the upper end of the substrate flange is connected to a support frame plate, the upper end of the support frame plate is installed with a driving motor, the output end of the driving motor is connected to the magnetic fluid sealing transmission through the coupling 1, the output end of the magnetic fluid sealing transmission is connected to the rotating shaft through the polytetrafluoroethylene coupling, the driving motor is arranged to drive the rotating shaft to rotate through the coupling 1, the magnetic fluid sealing transmission and the polytetrafluoroethylene coupling, and can further drive the sample holder and the sample body to rotate, which is beneficial to controlling the rotation speed of the sample body, is beneficial to increasing the deposition area, and can effectively improve the uniformity of the thin film.

[0013] Preferably, the heating element includes a heating bulb and a bulb holder, and a plurality of groups of the bulb holders are installed at the lower end of the bracket plate. The plurality of groups of the bulb holders are evenly distributed on the outside of the rotating shaft, and the heating bulbs are installed inside the bulb holders, which is beneficial to heating the sample body below.

[0014] Preferably, a thermocouple column is installed on the bracket plate, which can read the temperature of the sample body.

[0015] Preferably, an electrode flange is also installed on the substrate flange, and the electrode flange is connected to the sample holder and the heating bulb in an electrical circuit to transmit high voltage.

[0016] Preferably, a plurality of sample supporting plates are installed at the lower end of the sample holder, the sample body is located between the sample supporting plates and the sample holder, and a mounting groove is provided at the upper end of the sample supporting plate for supporting the sample body to install the sample body.

[0017] Preferably, the shielding component includes a high-voltage shielding cover, a polytetrafluoroethylene connecting plate 1, a deep groove ball bearing 1, a bearing fixing block and a polytetrafluoroethylene connecting plate 2, a support shaft connecting cover and a high-voltage shielding plate, the upper end of the support shaft 2 is connected to the support shaft connecting cover, the interior of the support shaft connecting cover is provided with the polytetrafluoroethylene connecting plate 1 and the polytetrafluoroethylene connecting plate 2, which play an insulating shielding role, the interior of the support shaft connecting cover is also provided with the bearing fixing block, the bearing fixing block needs to be connected to the electric wire to pass high voltage, so the outer side thereof is provided with the polytetrafluoroethylene connecting plate 1 and the polytetrafluoroethylene connecting plate 2 which play an insulating shielding role, the interior of the polytetrafluoroethylene connecting plate 1 and the polytetrafluoroethylene connecting plate 2 is provided with an installation groove for installing the bearing fixing block, the interior of the bearing fixing block is installed with the deep groove ball bearing 1, the rotating shaft passes through the interior of the deep groove ball bearing 1, the high-voltage shielding plate is installed at the inner bottom end of the support shaft connecting cover, the outer side of the rotating shaft is also provided with the high-voltage shielding cover, which plays a shielding role and also makes the rotating shaft in a vacuum to isolate the air.

[0018] Preferably, a second deep groove ball bearing is provided at the upper end of the bracket plate, and the second deep groove ball bearing is located on the outer side of the rotating shaft, which is beneficial for the rotating shaft to pass through the second deep groove ball bearing and is beneficial for the rotating shaft to rotate.

[0019] Compared with the prior art, the beneficial effects of the utility model are:

[0020] 1. The temperature-controlled biased substrate device heats the sample body evenly through the surrounding heating bulbs. The industrial computer reads the thermocouple parameters to achieve precise temperature control. In this way, the sample temperature can be controlled during deposition. The high temperature on the sample surface can increase the deposition rate, reduce adsorbed oxygen and defect polarization, and thus improve the conductivity of the film. After the deposition, in-situ annealing can be performed to further enhance the bonding force between the film and the substrate, reduce the interface defects between the two, and improve the film quality.

[0021] 2. Applying bias voltage to the sample can control the amount of ion bombardment on the surface of the growing film, increase the density and acceleration voltage of high-energy ions in the plasma under the substrate holder, and make the atoms penetrate deeper into the substrate surface, thereby improving the density of the film;

[0022] 3. The sample body is driven by a motor to control the infinitely variable speed rotation, which not only improves the uniformity of thin film deposition, but also enables the deposition of larger area samples with small targets, thereby increasing efficiency and reducing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0024] Figure 2 It is a schematic diagram of the internal structure of the utility model;

[0025] Figure 3It is a partial cross-sectional schematic diagram of the utility model;

[0026] Figure 4 It is another perspective schematic diagram of the utility model;

[0027] In the figure: 1. driving motor; 2. magnetic fluid seal transmission; 3. electrode flange; 4. supporting shaft 1; 5. coupling 1; 6. supporting frame plate; 7. substrate flange; 8. polytetrafluoro coupling; 9. rotating shaft; 10. high-voltage shielding cover; 11. polytetrafluoro connecting plate 1; 12. deep groove ball bearing 1; 13. bearing fixing block; 14. polytetrafluoro connecting plate 2; 15. supporting shaft connecting cover; 16. high-voltage shielding plate; 17. supporting shaft 2; 18. deep groove ball bearing 2; 19. heating bulb; 20. sample holder; 21. thermocouple column; 22. bracket plate; 23. bulb holder; 24. sample supporting plate; 25. sample body. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0029] Example:

[0030] See also Figure 1-Figure 4 As shown, a temperature-controlled bias substrate device comprises:

[0031] The driver installed on the substrate flange 7 and the sample body 25 located below the sample holder 20, the upper end of the sample holder 20 is connected with a rotating shaft 9, the rotating shaft 9 is connected to the driver, and the driver is used to drive the sample holder 20 and the sample body 25 to rotate, which is beneficial to controlling the rotation speed of the sample body 25, and is beneficial to increasing the deposition area, and can effectively improve the uniformity of the film. The lower end of the substrate flange 7 is connected to a bracket plate 22 through a support shaft 1 4, and a heating element is provided at the lower end of the bracket plate 22, which can uniformly heat the sample body 25 and control the temperature of the sample body 25 during deposition. The high temperature on the surface of the sample body 25 can increase the deposition rate, reduce the adsorbed oxygen and defect polarization, and thus improve the conductivity of the film. After the deposition is completed, in-situ annealing can be performed to further enhance the bonding force between the film and the substrate, reduce the interface defects between the two, and improve the film quality. The upper end of the bracket plate 22 is connected to a shielding member through a support shaft 2 17, and a through hole matching the rotating shaft 9 is provided inside the shielding member, which can play an insulating shielding role and is also beneficial to matching with the rotating shaft 9.

[0032] The temperature-controlled biased substrate device can achieve efficient and stable deposition. It can precisely control the temperature of the sample during deposition through PLD program control, increase the mobility of atoms, and improve the adhesion between the film and the substrate. The bias function can purposefully select and apply different biases to the substrate, select the appropriate amplitude or "duty cycle", and make it receive electrons or positive ions according to the polarity of the electricity. It can not only purify the substrate and enhance the adhesion of the film, but also change the crystal structure of the film. The rotatable structure of the substrate can realize the rotation of the sample at a controllable speed during deposition, increase the deposition area, and effectively improve the uniformity of the film. In summary, the temperature-controlled biased substrate plays an important role in improving the deposition rate, uniformity of the film composition, and adhesion of the film layer. It can solve multiple technical problems, promote the development and application of PVD technology, and have a far-reaching impact on the development of multiple fields.

[0033] refer to Figure 1-Figure 4 As shown, the driver includes a driving motor 1, a magnetic fluid sealing transmission 2, a coupling 5 and a polytetrafluoroethylene coupling 8. The upper end of the substrate flange 7 is connected to a support frame plate 6, and the upper end of the support frame plate 6 is installed with a driving motor 1. The output end of the driving motor 1 is connected to the magnetic fluid sealing transmission 2 through a coupling 5, and the output end of the magnetic fluid sealing transmission 2 is connected to a rotating shaft 9 through a polytetrafluoroethylene coupling 8. The set driving motor 1 drives the rotating shaft 9 to rotate through the coupling 5, the magnetic fluid sealing transmission 2 and the polytetrafluoroethylene coupling 8, and can further drive the sample holder 20 and the sample body 25 to rotate, which is beneficial to controlling the rotation speed of the sample body 25, and is beneficial to increasing the deposition area, and can effectively improve the uniformity of the film.

[0034] refer to Figure 1-Figure 4 As shown, the heating element includes a heating bulb 19 and a bulb holder 23. A plurality of bulb holders 23 are installed at the lower end of the bracket plate 22. The plurality of bulb holders 23 are evenly distributed on the outside of the rotating shaft 9, that is, surrounding the outside of the sample body 25 below the rotating shaft 9, which is conducive to uniform heating. The inside of the bulb holder 23 is installed with a heating bulb 19, which is conducive to heating the sample body 25 below.

[0035] refer to Figure 1-Figure 4 As shown, a thermocouple column 21 is installed on the bracket plate 22, which can read the temperature at the position of the sample body 25.

[0036] refer to Figure 1-Figure 4 As shown, an electrode flange 3 is also mounted on the substrate flange 7, and the electrode flange 3 is connected to the sample holder 20 and the heating bulb 19 in an electrical circuit to transmit high voltage.

[0037] refer to Figure 1-Figure 4As shown, a plurality of sample supporting plates 24 are installed at the lower end of the sample holder 20 , and the sample body 25 is located between the sample supporting plates 24 and the sample holder 20 . An installation groove is provided at the upper end of the sample supporting plates 24 for supporting the sample body 25 and installing the sample body 25 .

[0038] refer to Figure 1-Figure 4 As shown, the shielding member includes a high-voltage shielding cover 10, a polytetrafluoroethylene connecting plate 11, a deep groove ball bearing 12, a bearing fixing block 13 and a polytetrafluoroethylene connecting plate 14, a support shaft connecting cover 15 and a high-voltage shielding plate 16. The upper end of the support shaft 17 is connected to the support shaft connecting cover 15. The interior of the support shaft connecting cover 15 is provided with a polytetrafluoroethylene connecting plate 11 and a polytetrafluoroethylene connecting plate 14, which play an insulating shielding role. The interior of the support shaft connecting cover 15 is also provided with a bearing fixing block 13. The bearing fixing block 13 needs to be connected to an electric wire to pass high voltage, so the outer A polyfluoroethylene connecting plate 11 and a polyfluoroethylene connecting plate 2 14 which play an insulating shielding role are arranged on the side. The interior of the polyfluoroethylene connecting plate 11 and the polyfluoroethylene connecting plate 2 14 is provided with an installation groove for installing a bearing fixing block 13. A deep groove ball bearing 12 is installed inside the bearing fixing block 13. The rotating shaft 9 passes through the interior of the deep groove ball bearing 12. A high-voltage shielding plate 16 is installed at the bottom end of the interior of the support shaft connecting cover 15. A high-voltage shielding cover 10 is also arranged on the outside of the rotating shaft 9 to play a shielding role and also put the rotating shaft 9 in a vacuum to isolate it from the air.

[0039] refer to Figure 1-Figure 4 As shown, a deep groove ball bearing 18 is disposed at the upper end of the bracket plate 22 . The deep groove ball bearing 18 is located outside the rotating shaft 9 , which is beneficial for the rotating shaft 9 to pass through the deep groove ball bearing 18 and is beneficial for the rotating shaft 9 to rotate.

[0040] 1. The temperature-controlled biased substrate device heats the sample body evenly through the surrounding heating bulbs. The industrial computer reads the thermocouple parameters to achieve precise temperature control. In this way, the sample temperature can be controlled during deposition. The high temperature on the sample surface can increase the deposition rate, reduce adsorbed oxygen and defect polarization, and thus improve the conductivity of the film. After the deposition, in-situ annealing can be performed to further enhance the bonding force between the film and the substrate, reduce the interface defects between the two, and improve the film quality.

[0041] 2. Applying bias voltage to the sample can control the amount of ion bombardment on the surface of the growing film, increase the density and acceleration voltage of high-energy ions in the plasma under the substrate holder, and make the atoms penetrate deeper into the substrate surface, thereby improving the density of the film;

[0042] 3. The sample body is driven by a motor to control the infinitely variable speed rotation, which not only improves the uniformity of thin film deposition, but also enables the deposition of larger area samples with small targets, thereby increasing efficiency and reducing costs.

[0043] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A temperature-controlled bias substrate device, characterized in that: include: A driver mounted on a substrate flange (7) and a sample body (25) located below a sample holder (20), wherein the upper end of the sample holder (20) is connected to a rotating shaft (9), wherein the rotating shaft (9) is connected to the driver, and the lower end of the substrate flange (7) is connected to a bracket plate (22) via a supporting shaft 1 (4), wherein a heating element is disposed at the lower end of the bracket plate (22), and the upper end of the bracket plate (22) is connected to a shielding element via a supporting shaft 2 (17), wherein a through hole matching the rotating shaft (9) is provided inside the shielding element.

2. A temperature-controlled bias substrate device according to claim 1, characterized in that: The driver comprises a driving motor (1), a magnetic fluid sealing transmission (2), a coupling 1 (5) and a polytetrafluoroethylene coupling (8); the upper end of the substrate flange (7) is connected to a support frame plate (6); the upper end of the support frame plate (6) is mounted with a driving motor (1); the output end of the driving motor (1) is connected to the magnetic fluid sealing transmission (2) via the coupling 1 (5); the output end of the magnetic fluid sealing transmission (2) is connected to the rotating shaft (9) via the polytetrafluoroethylene coupling (8).

3. A temperature-controlled bias substrate device according to claim 2, characterized in that: The heating element comprises a heating bulb (19) and a bulb holder (23); a plurality of groups of the bulb holders (23) are mounted on the lower end of the bracket plate (22); the plurality of groups of the bulb holders (23) are evenly distributed on the outside of the rotating shaft (9); and the heating bulbs (19) are mounted inside the bulb holders (23).

4. A temperature-controlled bias substrate device according to claim 3, characterized in that: The bracket plate (22) is provided with a thermocouple column (21).

5. A temperature-controlled bias substrate device according to claim 4, characterized in that: An electrode flange (3) is also mounted on the substrate flange (7).

6. A temperature-controlled bias substrate device according to claim 5, characterized in that: A plurality of groups of sample supporting plates (24) are installed at the lower end of the sample holder (20), and the sample body (25) is located between the sample supporting plates (24) and the sample holder (20).

7. A temperature-controlled bias substrate device according to claim 6, characterized in that: The shielding member comprises a high-voltage shielding cover (10), a polytetrafluoroethylene connecting plate 1 (11), a deep groove ball bearing 1 (12), a bearing fixing block (13) and a polytetrafluoroethylene connecting plate 2 (14), a support shaft connecting cover (15) and a high-voltage shielding plate (16); the upper end of the support shaft 2 (17) is connected to the support shaft connecting cover (15); the polytetrafluoroethylene connecting plate 1 (11) and the polytetrafluoroethylene connecting plate 2 (14) are arranged inside the support shaft connecting cover (15); and the support shaft connecting cover (15) is also arranged inside. The bearing fixing block (13) is provided with mounting grooves for mounting the bearing fixing block (13) inside the polytetrafluoroethylene connecting plate 1 (11) and the polytetrafluoroethylene connecting plate 2 (14), the deep groove ball bearing 1 (12) is mounted inside the bearing fixing block (13), the rotating shaft (9) passes through the inside of the deep groove ball bearing 1 (12), the high-voltage shielding plate (16) is mounted on the inner bottom end of the supporting shaft connecting cover (15), and the high-voltage shielding cover (10) is also arranged on the outer side of the rotating shaft (9).

8. A temperature-controlled bias substrate device according to claim 7, characterized in that: A second deep groove ball bearing (18) is provided at the upper end of the bracket plate (22), and the second deep groove ball bearing (18) is located outside the rotating shaft (9).