Silicon nitride base cone for photovoltaic single crystal re-feeding barrel
By designing a silicon nitride bottom cone for single crystal silicon production, the existing quartz bottom cone is easily aging and has a short life at high temperatures, achieving higher high temperature resistance and longer service life, and reducing production costs.
Patent Information
- Application Number
- CN202421942674.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-12
- Publication Date
- 2025-05-16
- Estimated Expiration
- 2034-08-12
AI Technical Summary
The existing quartz materials as bottom cones have problems such as high cost, insufficient high temperature resistance, easy stress concentration and short life in the production of single crystal silicon, resulting in increased production costs and reduced crystal pulling quality.
A bottom cone for photovoltaic single crystal compound-injection barrel is designed using silicon nitride material, including a bottom cone body, a circular annular groove, a through hole, a first connecting hole and a second connecting hole, and the high temperature resistance and toughness are improved through optimized structural design.
While maintaining strength and toughness, it reduces high-temperature stress concentration, extends service life, reduces production costs, and improves the cost reduction and efficiency enhancement capabilities of the photovoltaic industry.
Smart Images
Figure CN222878153U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of photovoltaic single crystal re-investment silicon materials, in particular to a silicon nitride bottom cone for a photovoltaic single crystal re-investment barrel. Background Art
[0002] In the single crystal silicon production industry, as the size of the single crystal furnace heat field increases, the amount of single crystal feed is also increasing. The production capacity and output mainly depend on the amount of raw material input, so the repeated feeding of raw materials is an important production method for reducing costs and increasing efficiency of single crystals. However, the common structure of the existing feeding and re-feeding device is to use quartz material as the bottom cone. First of all, the cost is relatively high, and there are certain defects in hardness and high temperature resistance. Specifically, with each additional re-feeding, the weight of the silicon material will also increase the impact force on the quartz material bottom cone set at the bottom of the re-feeding tube. In severe cases, this will reduce the protective effect of the quartz material bottom cone, resulting in a shorter service life, requiring frequent replacement, and increasing production costs. It is also easy to bring in impurities, thereby reducing the quality of crystal pulling. At the same time, due to the unreasonable structural design of the existing quartz material bottom cone, quartz is prone to stress concentration in a high-temperature single crystal furnace, which causes the quartz material bottom cone to age easily and crack after high-temperature baking, or even break, resulting in an increased risk of abnormal accidents, and a reduced service life, which also requires frequent replacement. Utility Model Content
[0003] The utility model aims to provide a silicon nitride bottom cone for a photovoltaic single crystal re-investment barrel, so as to solve the problems raised in the above-mentioned background technology.
[0004] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: including a bottom cone body, a conical annular groove, a through hole, a first connecting hole, and a second connecting hole; the bottom cone body is a cone, and an inward conical annular groove is opened at its bottom; the first connecting hole is arranged at the top of the bottom cone body, and the second connecting hole is arranged at the top of the conical annular groove; the first connecting hole and the second connecting hole are connected by a through hole; the axis of the through hole is collinear with the axis of the bottom cone body.
[0005] As a preferred technical solution of the utility model, the axis of the frustum annular groove is colinear with the axis of the bottom cone body.
[0006] As a preferred technical solution of the utility model, the outer surface of the bottom cone body is flat and smooth.
[0007] Compared with the prior art, the beneficial effects of the utility model are: while maintaining the main body strength and increased toughness, the thickness of the truncated cone is made thinner, which improves the safety hazard of stress concentration that is prone to occur in the bottom cone part in the high-temperature single crystal furnace, as well as the reduced lifespan and the increase in production costs due to multiple replacements, which is beneficial to reducing costs and increasing efficiency in the photovoltaic industry. BRIEF DESCRIPTION OF THE DRAWINGS
[0008] Figure 1 This is a cross-sectional view of the utility model;
[0009] In the figure: it includes a bottom cone body 1, a truncated cone annular groove 2, a through hole 3, a first connecting hole 4, and a second connecting hole 5 DETAILED DESCRIPTION
[0010] Example 1
[0011] like Figure 1 As shown, the utility model discloses a silicon nitride bottom cone for photovoltaic single crystal re-investment barrel, including a bottom cone body 1, a truncated cone annular groove 2, a through hole 3, a first connection hole 4, and a second connection hole 5; the bottom cone body 1 is a cone, and an inward truncated cone annular groove 2 is opened at the bottom; the first connection hole 4 is arranged at the top of the bottom cone body 1, and the second connection hole 5 is arranged at the top of the truncated cone annular groove 2; the first connection hole 4 and the second connection hole 5 are connected by a through hole 3; the axis of the through hole 3 is collinear with the axis of the bottom cone body 1. The axis of the truncated cone annular groove 2 is collinear with the axis of the bottom cone body 1, and the outer surface of the bottom cone body 1 is flat and smooth, which improves the safety hazard problem of stress concentration that is easy to occur in the bottom cone part of the high-temperature single crystal furnace; as well as the problems of reduced life and increased production costs due to multiple replacements, which is beneficial to reducing costs and increasing efficiency in the photovoltaic industry.
[0012] The working principle of the utility model is as follows: the utility model uses silicon carbide integral molding, has high hardness, impact resistance, wear resistance, more outstanding toughness and bending resistance, low high temperature creep rate, and small friction coefficient, self-lubricating, small thermal expansion coefficient, good thermal shock resistance, and can be used for a long time at high temperature. When installed, it is directly installed at the bottom of the re-investment cylinder, which optimizes the phenomenon that the connection position with the molybdenum rod is prone to dark cracks due to uneven force, and the connection between the outer table and the lower base is prone to damage and collapse during transportation or axe unloading.
[0013] Although the specific embodiments of the present invention are described in detail above, the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the field without departing from the purpose of the present invention, and modifications or deformations without creative labor are still within the scope of protection of the present invention.
Claims
1. A silicon nitride bottom cone for photovoltaic single crystal re-investment barrel, characterized in that: The invention comprises a bottom cone body (1), a truncated cone annular groove (2), a through hole (3), a first connecting hole (4), and a second connecting hole (5); the bottom cone body (1) is a cone, and a truncated cone annular groove (2) is formed at the bottom thereof; the first connecting hole (4) is arranged at the top of the bottom cone body (1), and the second connecting hole (5) is arranged at the top of the truncated cone annular groove (2); the first connecting hole (4) and the second connecting hole (5) are connected via the through hole (3); the axis of the through hole (3) is colinear with the axis of the bottom cone body (1).
2. The silicon nitride bottom cone for photovoltaic single crystal re-investment barrel according to claim 1, characterized in that: The axis of the frustum annular groove (2) is colinear with the axis of the bottom cone body (1).
3. The silicon nitride bottom cone for photovoltaic single crystal re-investment barrel according to claim 1, characterized in that: The outer surface of the bottom cone body (1) is flat and smooth.