Tray device and semiconductor production equipment

Abstract

The utility model discloses a tray device, which comprises a tray body, the tray body comprises a first contact surface contacted with a wafer, the diameter of the first contact surface is not smaller than that of the wafer, the tray device further comprises a supporting piece, the supporting piece is arranged on the tray body in a penetrating manner, and the supporting piece is arranged on the tray body. And the lifting device is used for lifting the wafer from the first contact surface. According to the tray device provided by the utility model, the wafer can completely fall on the surface of the tray body, and the back surface of the wafer is not provided with a suspended area, so that gas is prevented from reacting on the back surface of the wafer in an epitaxial process to generate residues, and the product quality can be improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of microelectronics, and in particular relates to a tray device and semiconductor production equipment. Background Art

[0002] 4H-SiC (silicon carbide) semiconductor is an ideal electronic material for making high-temperature, high-frequency, and high-power power electronic devices. In the past 20 years, the material growth technology has been continuously improved, and the material quality has gradually improved. At present, the epitaxy of mainstream SiC power devices in the industry is grown in a homogeneous epitaxial manner, in order to obtain higher epitaxial layer lattice quality with lower lattice mismatch and thermal expansion mismatch. However, for homogeneous epitaxy, the reaction gas will inevitably penetrate into the back of the substrate due to the design of the tray and ring in the reaction chamber of the equipment. During the epitaxy process, a circle of circular residue will be formed on the back synchronously, and the residue component is SiC.

[0003] This ring-shaped residue is not desired because it will further deteriorate in subsequent thin film and high-temperature processes, affecting the warpage at the edge of the wafer, thereby affecting the intra-wafer uniformity in the lithography process. In severe cases, it may even cause local defocus, thereby reducing the yield of the entire wafer.

[0004] During the epitaxial growth process of SiC epitaxial substrate, a tray device needs to be set inside the reaction chamber of the equipment, such as Figure 5 As shown, the tray device includes a tray body and a retaining ring, and the retaining ring is used to lift the substrate. The height of the tray is 1 to 1.5 mm higher than the retaining ring, resulting in the back of the ring around the edge of the substrate being suspended, providing space for gas reaction to generate residues. The flat edge of the substrate does not completely cover the gap between the tray and the retaining ring, resulting in the reaction gas flowing from the flat edge of the substrate to the back of the substrate when it fills the entire reaction chamber from top to bottom on the front of the substrate. Due to the design defects of the tray and the retaining ring, and the existence of the flat edge of the substrate, the reaction gas will leak from the flat edge of the substrate to the back of the substrate, thereby simultaneously generating residues on the back, affecting product quality.

[0005] For example, the patent document with publication number CN103184434A discloses a tray device, including a gas delivery channel for providing process gas and at least one tray for carrying substrates, gas nozzles are arranged on the gas delivery channel corresponding to the substrate carrying surface of the tray, the substrate carrying surface of the tray includes a carrying area and a non-carrying area, and the gas nozzles are all arranged toward the carrying area and inclined relative to the plane where the carrying area is located. The technical solution disclosed in the patent document also cannot solve the technical problems such as those described above. Utility Model Content

[0006] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model provides a tray device, the purpose of which is to prevent the substrate from generating residues during the epitaxial process and improve the product quality.

[0007] In order to achieve the above-mentioned purpose, the technical solution adopted by the utility model is: a tray device, including a tray body, the tray body including a first contact surface in contact with the wafer, the diameter of the first contact surface is not less than the diameter of the wafer, the tray device also includes a support member, the support member is passed through the tray body, and is used to lift the wafer from the first contact surface.

[0008] The supporting member is provided in plurality.

[0009] The tray body is circular, and the number of the supporting members is three and evenly distributed around the center of the tray body.

[0010] The projection of the wafer on the first contact surface completely covers the projection of the support member on the first contact surface.

[0011] The tray device further comprises a clamping ring fixedly connected to the supporting member, and the clamping ring is arranged around the tray body.

[0012] The utility model also provides a semiconductor production device, comprising the tray device.

[0013] With the tray device of the utility model, the wafer can be completely placed on the surface of the tray body, and there is no overhanging area on the back of the wafer, so as to avoid the reaction of gas on the back of the wafer during the epitaxial process to generate residues, thereby improving product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] This specification includes the following drawings, which show the following contents:

[0015] Figure 1 is a schematic structural diagram of a tray device according to the first embodiment;

[0016] Figure 2 is a schematic structural diagram of a tray device of Embodiment 2;

[0017] Figure 3 It is a structural schematic diagram of the pallet body;

[0018] Figure 4 It is a schematic diagram of the connection between the clamp ring and the support member;

[0019] Figure 5 It is a structural schematic diagram of a tray device of the prior art;

[0020] The markings in the figure are:

[0021] 1. Tray body; 2. Clamp ring; 3. Substrate; 4. Gap; 5. Support member; 6. Through hole; 7. First contact surface. DETAILED DESCRIPTION

[0022] The specific implementation methods of the utility model are further explained in detail below with reference to the accompanying drawings through the description of embodiments, with the aim of helping technicians in the field to have a more complete, accurate and in-depth understanding of the concept and technical solution of the utility model and facilitating its implementation.

[0023] It should be noted that, in the following embodiments, the “first” and “second” mentioned do not represent an absolute distinction in structure and / or function, nor do they represent a sequential order of execution, but are merely for the convenience of description.

[0024] Embodiment 1

[0025] like Figure 1 As shown, this embodiment provides a tray device, including a tray body 1, the tray body 1 includes a first contact surface 7 that is completely in contact with the first surface of the wafer, and the diameter of the first contact surface 7 is not less than the diameter of the wafer. The tray device also includes a support member 5, the support member 5 is penetrated through the tray body 1, and is used to lift the wafer from the first contact surface 7.

[0026] Specifically, if Figure 1 As shown, the tray body 1 is a disc-shaped structure, and a plurality of support members 5 are provided, which are evenly distributed around the center of the tray body 1. The tray body 1 is provided with an avoidance hole for the support member 5 to pass through. The support member 5 is vertically arranged, and the support member 5 is movable in the vertical direction. All the support members 5 provide support for the wafer together, and the projection of the wafer on the first contact surface 7 completely covers the projection of the support member 5 on the first contact surface 7. The first contact surface 7 is the top surface of the tray body 1, and the first surface is the back surface of the wafer.

[0027] When the support 5 is raised, the support 5 pushes the wafer upward, and the function of separating the wafer from the tray body 1 can be realized. The first surface of the wafer is separated from the first contact surface 7 of the tray body 1, which is convenient for taking and placing the wafer. When the support 5 falls, the wafer can be completely placed on the tray body 1, the first surface of the wafer is completely in contact with the first contact surface 7 of the tray body 1, the wafer is coaxial with the tray body 1, and there is no suspended area on the back of the wafer, which avoids the reaction of gas on the back of the wafer during the epitaxial process to generate residues, thereby improving product quality.

[0028] like Figure 1 As shown, in this embodiment, three support members 5 are provided, and the support stability is good.

[0029] This embodiment also provides a semiconductor production equipment, including the tray device of the above structure.

[0030] Embodiment 2

[0031] like Figures 2 to 4 As shown, this embodiment provides a tray device, including a tray body 1, the tray body 1 includes a first contact surface 7 that is completely in contact with the first surface of the wafer, and the diameter of the first contact surface 7 is not less than the diameter of the wafer. The tray device also includes a support member 5, the support member 5 is penetrated through the tray body 1, and is used to lift the wafer from the first contact surface 7.

[0032] Specifically, if Figures 2 to 4 The tray body 1 is a disc-shaped structure, and a plurality of support members 5 are provided, which are evenly distributed around the center of the tray body 1. The tray body 1 is provided with an escape hole for the support member 5 to pass through. The support member 5 is vertically arranged, and the support member 5 is movable in the vertical direction, and all the support members 5 provide support for the wafer together. The first contact surface 7 is the top surface of the tray body 1, and the first surface is the back surface of the wafer.

[0033] like Figures 2 to 4 As shown, the tray device of this embodiment also includes a clamping ring 2 fixedly connected to the support member 5, and the clamping ring 2 is arranged around the tray body 1, so that the support members 5 arranged in multiples can lift the wafer at the same time, thereby ensuring the stability of the wafer movement. The clamping ring 2 is a circular ring structure, and the clamping ring 2 and the tray body 1 are coaxially arranged. The support member 5 is fixedly connected to the inner circular surface of the clamping ring 2 and the support member 5 is located in the center hole of the clamping ring 2. The diameter of the center hole of the clamping ring 2 is not less than the diameter of the first contact surface 7, and the tray body 1 is located in the center hole of the clamping ring 2. The tray body 1 is provided with a through hole 6 for the support member 5 to pass through. The number of through holes 6 is the same as the number of support members 5. The through hole 6 is a circular hole and the through hole 6 forms an opening for the support member 5 to pass through on the outer circular surface of the tray body 1. The axis of the through hole 6 is parallel to the axis of the tray body 1. The second contact surface of the support member 5 contacts the first surface of the wafer. The second contact surface of the support member 5 is a plane parallel to the first contact surface 7 of the tray body 1, and the second contact surface of the support member 5 is the top surface of the support member 5.

[0034] When the clamp ring 2 is embedded and flush with the tray body 1, the wafer completely falls on the first contact surface 7 of the tray body 1, the first surface of the wafer is completely in contact with the first contact surface 7 of the tray body 1, the wafer is coaxial with the tray body 1, and there is no suspended area on the back of the wafer, which prevents the gas from reacting on the back of the wafer during the epitaxial process and generating residues, thereby improving product quality. When the clamp ring 2 rises, the clamp ring 2 drives the support member 5 to rise synchronously, and the wafer is lifted through all the support members 5, realizing the function of separating the wafer from the tray body 1, which is convenient for taking and placing the wafer.

[0035] like Figure 1As shown, in this embodiment, three support members 5 and three through holes 6 are provided, and each support member 5 passes through a through hole 6 respectively, so the support stability is good, and the distance between the support member 5 and the center of the tray body 1 is slightly smaller than the radius of the wafer.

[0036] This embodiment also provides a semiconductor production equipment, including the tray device of the above structure.

[0037] The above is an exemplary description of the utility model in conjunction with the accompanying drawings. Obviously, the specific implementation of the utility model is not limited to the above-mentioned method. As long as various non-substantial improvements are made using the method concept and technical solution of the utility model; or the above concept and technical solution of the utility model are directly applied to other occasions without improvement, they are all within the protection scope of the utility model.

Claims

1. A tray device, comprising a tray body, wherein the tray body comprises a first contact surface for contacting a wafer, characterized in that: The diameter of the first contact surface is not less than the diameter of the wafer. The tray device further includes a support member, which is penetrated through the tray body and is used to lift the wafer from the first contact surface.

2. The tray device according to claim 1, characterized in that: The supporting member is provided in plurality.

3. The tray device according to claim 2, characterized in that: The tray body is circular, and the number of the supporting members is three and evenly distributed around the center of the tray body.

4. The tray device according to any one of claims 1 to 3, characterized in that: The projection of the wafer on the first contact surface completely covers the projection of the support member on the first contact surface.

5. The tray device according to claim 2, characterized in that: It also includes a clamping ring fixedly connected to the supporting member, and the clamping ring is arranged around the tray body.

6. Semiconductor production equipment, characterized in that: A tray device comprising any one of claims 1 to 5.

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