Exhaust pipeline and process chamber

By designing new exhaust ports and rotation interfaces, the problem that the exhaust port design in the existing technology does not conform to aerodynamics is solved, the gentle inhalation of airflow and the complete elimination of particulate matter is achieved, and the accuracy and yield of temperature control are improved.

CN222908057UActive Publication Date: 2025-05-27SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER CO LTD
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Patent Information

Application Number
CN202421610442.3
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-07-08
Publication Date
2025-05-27
Estimated Expiration
2034-07-08

AI Technical Summary

Technical Problem

The exhaust port design of the existing semiconductor thin film deposition chamber does not meet the aerodynamic requirements, resulting in sudden changes in the airflow at the exhaust port affecting the accuracy of temperature control, and it is easy to form particulate deposition and contaminate the chamber.

Method used

A new type of exhaust port is designed, with a first exhaust port diameter that gradually shrinks from the exhaust inner port to the exhaust outer port, and is connected to the vacuum line through a rotary interface to ensure the gentle intake of air flow and eliminate the step structure to avoid particulate deposition.

Benefits of technology

It improves the uniformity of the airflow and temperature-controlled reaction speed, enhances the precise control of the outside temperature, improves the uniformity of the deposition film thickness, and completely eliminates the particulate matter deposition environment, improving yield.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses an exhaust pipeline and a process chamber, and the exhaust pipeline comprises an exhaust port which is arranged on one side wall of the process chamber and comprises an exhaust inner port and an exhaust outer port which are respectively arranged on the inner surface and the outer surface of the side wall, and the exhaust inner port and the exhaust outer port are arranged in the horizontal projection direction. The exhaust opening is provided with a first exhaust opening diameter which is gradually shrunk from the exhaust inner opening to the exhaust outer opening. According to the utility model, the accuracy of temperature control can be enhanced, and the uniformity of the thickness of a deposited film is improved.
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Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing equipment, in particular to an exhaust pipeline and a process chamber. Background Art

[0002] Reference Figure 1 There is a conventional semiconductor thin film deposition chamber 10, which is provided with a rotating base 17, an air inlet 11 and an exhaust port 16. The rotating base 17 is arranged in the chamber 10 with a circular inner cavity, and is used to carry wafers and drive the wafers to rotate for thin film deposition process; the air inlet 11 and the exhaust port 16 are oppositely arranged on the side walls on the left and right sides of the chamber 10. The exhaust port 16 is connected to a vacuum pipeline 14 through an adapter 12 arranged on the outer surface of the right side wall of the chamber 10, and the exhaust port 16, the adapter 12 and the vacuum pipeline 14 are sequentially connected to form an exhaust pipeline 13.

[0003] Reference Figures 2 - 5 And with reference to Figure 1 The exhaust port 16 has an exhaust inner port 161 located on the inner surface of the side wall of the chamber 10 and an exhaust outer port 162 located on the outer surface of the side wall of the chamber 10. The adapter 12 is provided with an adapter port 15, and the adapter port 15 has an inner end port 151 and an outer end port 152. The exhaust pipeline 13 communicates with the inside of the chamber 10 through the exhaust inner port 161, the inner end port 151 is connected to the exhaust outer port 162, and the outer end port 152 is connected to the port 141 of the vacuum pipeline 14. Among them, the hole shapes of the adapter port 15 and the vacuum pipeline port 141 are circular holes, and the sizes of the inner end port 151 and the outer end port 152 are the same, and the sizes of the outer end port 152 and the vacuum pipeline port 141 are the same, as Figures 2 - 3 shown. The hole shape of the exhaust port 16 is a waist-shaped hole arranged in the horizontal direction, and the sizes of the exhaust inner port 161 and the exhaust outer port 162 are the same, as Figures 4 - 5 shown. The exhaust port 16, the adapter port 15 and the vacuum pipeline port 141 are coaxially arranged, and the width of the exhaust port 16 in the horizontal direction is greater than the diameter of the adapter port 15, and the height of the exhaust port 16 in the vertical direction is less than the diameter of the adapter port 15.

[0004] The existing deposition chamber 10 mentioned above measures the temperature of the wafer surface through detectors evenly arranged along the radius direction of the wafer to control the temperature. In the thin film deposition process, process gas is introduced into the chamber 10 through the gas inlet 11. After passing through the surface of the rotating wafer, a rotating air flow with annular flow is formed and discharged from the exhaust port 16 to the vacuum pipeline 14. However, since the inner exhaust port 161 and the outer exhaust port 162 of the exhaust port 16 have the same size, the turning angle formed between the inner wall at the width of the exhaust port 16 and the inner surface of the side wall of the chamber 10 is relatively steep. When the rotating air flow in the chamber 10 flows through the exhaust port 16, under the suction of the negative pressure in the vacuum pipeline 14, the air flow will suddenly enter the exhaust port 16 without buffering, thus affecting the uniformity of the annular air flow in the chamber 10. Furthermore, the detected temperature of the outer side (outer ring) of the wafer at the exhaust port 16 will suddenly be lower than the detected temperature of the inner side (inner ring) of the wafer, resulting in a certain impact on the precise temperature control of the outer and inner sides of the wafer.

[0005] Moreover, since the width of the exhaust port 16 is larger than the diameter of the adapter 15 and the height of the exhaust port 16 is smaller than the diameter of the adapter 15, a transverse step 18 facing the inner exhaust port 161 and a longitudinal step 19 facing the vacuum pipeline 14 will be generated at the connection between the outer exhaust port 162 and the inner end interface 151, and particulate matter deposition is likely to form at the two steps 18 and 19, resulting in contamination of the chamber 10 when there is backpressure in the chamber 10.

[0006] The currently adopted temperature control system itself has the conditions for precise temperature control. However, due to the fact that the above-mentioned exhaust port 16 does not meet the aerodynamic design requirements, the chamber 10 cannot quickly achieve precise temperature control in a short time and there is a hidden danger of particulate matter aggregation. Therefore, it is necessary to design a new type of exhaust port and exhaust pipeline. Utility Model Content

[0007] The purpose of the present utility model is to overcome the above-mentioned defects existing in the prior art and provide an exhaust pipeline and a process chamber.

[0008] To achieve the above purpose, the technical solution of the present utility model is as follows:

[0009] The present utility model provides an exhaust pipeline, including:

[0010] An exhaust port, provided on one side wall of the process chamber. The exhaust port includes an inner exhaust port and an outer exhaust port located on the inner surface and the outer surface of the side wall respectively. In the horizontal projection direction, the exhaust port has a first exhaust diameter that gradually shrinks from the inner exhaust port to the outer exhaust port.

[0011] Furthermore, in the vertical projection direction, the exhaust port has a second exhaust diameter that is consistent from the inner exhaust port to the outer exhaust port.

[0012] Furthermore, it also includes a transition part, which is arranged on the outer surface of the side wall, and a transition interface is provided in the transition part, and the transition interface includes an inner end interface located on the inner surface of the transition part close to the exhaust port and an outer end interface on the outer surface of the transition part away from the exhaust port, and the inner end interface has a shape and size consistent with the exhaust outer port, and is connected to the exhaust outer port.

[0013] Furthermore, in the horizontal projection direction, the adapter has a first adapter diameter that gradually shrinks from the inner end interface to the outer end interface, and in the vertical projection direction, the adapter has a second adapter diameter that gradually expands from the inner end interface to the outer end interface.

[0014] Furthermore, the exhaust port and the adapter are coaxially arranged.

[0015] Further, the exhaust inner port is a first waist-shaped hole arranged along the horizontal direction, the exhaust outer port is a second waist-shaped hole arranged along the horizontal direction, the inner end interface is a third waist-shaped hole arranged along the horizontal direction, and the outer end interface is a circular hole. In the horizontal direction, the width of the first waist-shaped hole is greater than the width of the second waist-shaped hole, and the width of the second waist-shaped hole is consistent with the width of the third waist-shaped hole. In the vertical direction, the heights of the first waist-shaped hole, the second waist-shaped hole and the third waist-shaped hole are consistent, and the diameter of the circular hole of the outer end interface is smaller than the width of the third waist-shaped hole, and greater than the height of the third waist-shaped hole.

[0016] Further, in the horizontal projection direction, the contour line of the inner wall of the exhaust port located between the exhaust inner port and the exhaust outer port is straight or arc-shaped; and / or, in the horizontal or vertical projection direction, the contour line of the inner wall of the transition interface located between the inner end interface and the outer end interface is straight or arc-shaped, and the inner wall of the transition interface smoothly transitions between the first transition interface diameter and the second transition interface diameter; and / or, in the horizontal projection direction, the angle between the line connecting the same side ends of the exhaust inner port and the exhaust outer port and the axis is 30 to 60 degrees, or, in the horizontal projection direction, the angle between the line connecting the same side ends of the exhaust inner port and the exhaust outer port and the axis is 45 degrees.

[0017] Furthermore, it also includes a vacuum pipeline, which is arranged on the outer surface of the adapter, and the vacuum pipeline is connected to the outer end interface through a port.

[0018] The utility model also provides a process chamber, comprising the above-mentioned exhaust pipeline.

[0019] Further, it further includes a rotating base and an air inlet. The rotating base is disposed in the process chamber, used for carrying a processing object and driving the processing object to rotate. The air inlet is disposed on the other side wall of the process chamber opposite to the exhaust port, used for introducing process gas into the process chamber to perform thin film deposition on the rotating processing object.

[0020] As can be seen from the above technical solution, in the present utility model, by setting a first exhaust diameter in the horizontal projection direction such that the exhaust port gradually contracts from the exhaust inner port to the exhaust outer port, the shape of the contact part between the exhaust port and the inner part of the chamber is improved to conform to the streamline structure of the annular gas flow, so as to conform to the aerodynamic design, enabling the rotating air flow passing through the exhaust port to be gently and gradually sucked into the exhaust port along the gradually contracting first exhaust diameter of the exhaust port. Therefore, a temperature control reaction can be made in a timely manner when the air flow changes, and thus there is enough time to control the outer temperature at the exhaust port in advance, enhancing the accuracy of the outer temperature control. At the same time, the uniformity of the gas distribution on the surface of the processing object is improved, thereby enhancing the uniformity of the deposited film thickness. Further, by setting an inner end interface of the adapter with the same shape and size as the exhaust outer port to form a seamless butt joint with the exhaust port, the deposition environment of particulate matter is completely eliminated, and the yield is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 FIG. 9 is a schematic structural diagram of an existing semiconductor thin film deposition chamber.

[0022] Figure 2 FIG. Figure 1 is an enlarged side view of the exhaust pipeline in FIG.

[0023] Figure 3 FIG. Figure 1 is an enlarged top view of the exhaust pipeline in FIG.

[0024] Figure 4 FIG. Figure 2 is a view taken along the line A - A in FIG.

[0025] Figure 5 FIG. Figure 3 is a view taken along the line B - B in FIG.

[0026] Figure 6 FIG. 37 is a schematic structural diagram of a semiconductor process chamber according to a preferred embodiment of the present utility model.

[0027] Figure 7 FIG. Figure 6 is an enlarged side view of the exhaust pipeline in FIG.

[0028] Figure 8 FIG. Figure 6 is an enlarged top view of the exhaust pipeline in FIG.

[0029] Figure 9 For Figure 7 the C-C view in

[0030] Figure 10 For Figure 8 the D-D view in Detailed implementation manners

[0031] To make the objectives, technical solutions and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below. Apparently, the described embodiments are some but not all of the embodiments of the present utility model. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art in the field to which the present utility model belongs. The words such as "including" used herein mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items.

[0032] The following further elaborates in detail on the specific implementation manners of the present utility model with reference to the accompanying drawings.

[0033] Refer to Figures 6 - 8 FIG.. An exhaust pipeline 23 of the present utility model includes an exhaust port 26 provided on the side wall (shown as the right side) of a process chamber 20. Among them, the exhaust port 26 includes an exhaust inner port 261 located on the inner surface of the side wall of the process chamber 20, and an exhaust outer port 262 located on the outer surface of the side wall of the process chamber 20. In Figure 8 the horizontal projection direction shown, the exhaust port 26 has a first exhaust diameter that gradually contracts from the exhaust inner port 261 to the exhaust outer port 262 (axial direction). That is, the horizontal width of the exhaust port 26 between the exhaust inner port 261 and the exhaust outer port 262 gradually decreases.

[0034] In some embodiments, in Figure 7 the vertical projection direction shown, the exhaust port 26 also has a second exhaust diameter that is consistent from the exhaust inner port 261 to the exhaust outer port 262 (axial direction). That is, the vertical height of the exhaust port 26 between the exhaust inner port 261 and the exhaust outer port 262 is equal.

[0035] In some embodiments, it further includes an adapter portion 22 provided on the outer surface of the sidewall of the process chamber 20. Among them, a transfer port 25 is provided in the adapter portion 22; the transfer port 25 includes an inner end interface 251 located on the inner surface of the adapter portion 22 near the exhaust port 26, and an outer end interface 252 located on the outer surface of the adapter portion 22 away from the exhaust port 26. The inner end interface 251 has the same shape and size as the exhaust outer port 262 and is seamlessly docked with the exhaust outer port 262.

[0036] In some embodiments, in Figure 8 In the horizontal projection direction shown, the transfer port 25 has a first transfer port diameter that gradually shrinks from the inner end interface 251 to the outer end interface 252 (axial direction). That is, the horizontal width of the transfer port 25 between the inner end interface 251 and the outer end interface 252 gradually decreases.

[0037] In some embodiments, in Figure 7 In the vertical projection direction shown, the transfer port 25 has a second transfer port diameter that gradually expands from the inner end interface 251 to the outer end interface 252 (axial direction). That is, the vertical height of the transfer port 25 between the inner end interface 251 and the outer end interface 252 gradually increases.

[0038] In some embodiments, the exhaust port 26 and the transfer port 25 are coaxially arranged, as Figures 7 - 8 shown.

[0039] In some embodiments, the exhaust port 26 forms a flared or funnel-shaped structure facing the inside of the process chamber 20 in Figure 8 the horizontal projection direction shown.

[0040] In some embodiments, the transfer port 25 forms a flared or funnel-shaped structure facing the exhaust port 26 and being docked in Figure 8 the horizontal projection direction shown.

[0041] In some embodiments, the transfer port 25 forms a reverse flared or reverse funnel-shaped structure facing the exhaust port 26 and being docked in Figure 7 the vertical projection direction shown.

[0042] Referring to Figures 9 - 10 and in combination with reference to Figures 7 - 8 . In some embodiments, the exhaust inner port 261 of the exhaust port 26 is a first kidney-shaped orifice arranged in the horizontal direction, and the exhaust outer port 262 is a second kidney-shaped orifice arranged in the horizontal direction. The inner end interface 251 of the transfer port 25 is a third kidney-shaped orifice arranged in the horizontal direction, and the outer end interface 252 is a circular orifice.

[0043] Among them, in the horizontal direction, the width of the first kidney-shaped orifice is greater than that of the second kidney-shaped orifice, and the widths of the second kidney-shaped orifice and the third kidney-shaped orifice are the same. In the vertical direction, the heights of the first kidney-shaped orifice, the second kidney-shaped orifice, and the third kidney-shaped orifice are the same. That is, the second kidney-shaped orifice and the third kidney-shaped orifice completely overlap. The diameter of the circular orifice of the outer end interface 252 is smaller than the widths of the second kidney-shaped orifice and the third kidney-shaped orifice, and the diameter of the circular orifice of the outer end interface 252 is greater than the heights of the second kidney-shaped orifice and the third kidney-shaped orifice.

[0044] In some embodiments, the exhaust inner orifice 261, the exhaust outer orifice 262, and the inner end interface 251 can also be orifices of other shapes than kidney-shaped orifices, such as rounded rectangular orifices, oval orifices, or any orifice type applicable to existing process chambers.

[0045] In some embodiments, in the horizontal projection direction, the contour line 2632 of the inner wall of the exhaust port 26 located between the exhaust inner orifice 261 and the exhaust outer orifice 262 is Figure 8 the straight line shown.

[0046] In some embodiments, in the horizontal projection direction, the contour line of the inner wall of the exhaust port 26 located between the exhaust inner orifice 261 and the exhaust outer orifice 262 is arc-shaped.

[0047] In some embodiments, in the horizontal projection direction, the contour line 2532 of the inner wall of the adapter 25 located between the inner end interface 251 and the outer end interface 252 is Figure 8 the straight line shown.

[0048] In some embodiments, in the horizontal projection direction, the contour line of the inner wall of the adapter 25 located between the inner end interface 251 and the outer end interface 252 is arc-shaped.

[0049] In some embodiments, in the vertical projection direction, the contour line 2531 of the inner wall of the adapter 25 located between the inner end interface 251 and the outer end interface 252 is Figure 7 the straight line shown.

[0050] In some embodiments, in the vertical projection direction, the contour line of the inner wall of the adapter 25 located between the inner end interface 251 and the outer end interface 252 is arc-shaped.

[0051] It can be understood that in Figure 7 the vertical projection direction shown, the contour lines 2631 of the upper and lower inner walls of the exhaust port 26 located between the exhaust inner orifice 261 and the exhaust outer orifice 262 are parallel straight lines.

[0052] In some embodiments, when Figure 8When the contour lines 2632 of the inner wall of the exhaust port 26 and the contour lines 2532 of the inner wall of the adapter 25 are straight lines in the horizontal projection direction, they are not on the same straight line. At this time, in the horizontal projection direction, the flare angles of the flare or funnel openings formed by the exhaust port 26 and the adapter 25 are different.

[0053] In some embodiments, when the contour lines of the inner wall of the exhaust port 26 and the contour lines of the inner wall of the adapter 25 are straight lines in the horizontal projection direction, they are on the same straight line. At this time, in the horizontal projection direction, the flare angles of the flare or funnel openings formed by the exhaust port 26 and the adapter 25 are the same.

[0054] In some embodiments, the transition between the first adapter diameter in the horizontal projection direction and the second adapter diameter in the vertical projection direction of the inner wall of the adapter 25 is smooth. That is, a smooth transition method is adopted to connect the inner walls of the adapter 25 with different diameters in the horizontal projection direction and the vertical projection direction, so that the adapter 25 has an overall smooth inner wall surface contour.

[0055] In some embodiments, a smooth transition connection is adopted between the inner end interface 251 and the exhaust outer port 262, which is more conducive to the gentle inhalation of air flow.

[0056] In some embodiments, at Figure 8 In the horizontal projection direction shown, the angle α between the connection line between the same-side ends of the exhaust inner port 261 and the exhaust outer port 262 and the axis is 30 to 60 degrees. For example, the angle α between the connection line (i.e., the contour line 2632 of the inner wall of the exhaust port 26) between the upper end shown of the exhaust inner port 261 and the upper end shown of the exhaust outer port 262 (or the lower end shown of the exhaust inner port 261 and the lower end shown of the exhaust outer port 262) and the axis is 30 to 60 degrees. It should be noted that the size of the angle α may be different on the upper end side and the lower end side of the exhaust port 26 in the illustrated direction, that is, an asymmetric flare angle is formed up and down.

[0057] Preferably, at Figure 8 In the horizontal projection direction shown, the angle α between the connection line between the same-side ends of the exhaust inner port 261 and the exhaust outer port 262 and the axis is 45 degrees. That is, the exhaust port 26 forms a flared or funnel-shaped with a 90-degree flare. In other words, by Figure 3 Performing a 135-degree (relative to the plane of the outer surface of the side wall of the process chamber on this side) side cut on both ends in the width direction of the existing exhaust port 16 shown, so that both ends in the width direction of the exhaust port 16 extend to both sides, forming the exhaust port 26 of the present invention that expands towards the inside of the process chamber 20. That is, a flared exhaust port 26 with a flat structure that is wider inside and narrower outside and has the same inner and outer heights is formed.

[0058] Refer toFigures 6 - 8 In some embodiments, a vacuum pipeline 24 is further included on the outer surface of the adapter 22. The vacuum pipeline 24 has a port 241 that is consistent in shape and size with the outer end interface 252, and is used to seamlessly connect with the outer end interface 252 of the adapter 22. The exhaust port 26, the adapter 25 (adapter 22) and the vacuum pipeline 24 are sequentially connected to form the exhaust pipeline 23.

[0059] In some embodiments, the port 241 of the vacuum line 24 is a circular port having the same size as the outer end interface 252 .

[0060] A process chamber of the present invention is further described in detail below through specific implementations and in conjunction with the accompanying drawings.

[0061] refer to Figure 6 Combined with reference Figures 7 - 10 A process chamber 20 of the present invention includes the exhaust pipeline 23 mentioned above.

[0062] In some embodiments, the process chamber 20 includes a thin film deposition chamber. The process chamber 20 is provided with a rotating base 27 and an air inlet 21. The rotating base 27 is provided in the process chamber 20 for carrying a processing object, which may be, for example, a wafer. The rotating base 27 also drives the wafer to rotate, so that the wafer undergoes a thin film deposition process while rotating. The process chamber 20 has a circular inner cavity.

[0063] The air inlet 21 is disposed on the other side wall of the process chamber 20 opposite to the exhaust port 26 (the left side wall in the figure), and is used to introduce process gas into the process chamber 20 to perform a thin film deposition process on the rotating wafer to form a deposited film on the surface of the wafer.

[0064] The process gas introduced from the air inlet 21 forms a rotating airflow with an annular flow in the process chamber 20 under the action of the rotation of the wafer, and when passing through the exhaust port 26, it is sucked by the exhaust port 26 under the suction action of the vacuum pipeline 24, and is discharged in turn through the adapter port 25 in the adapter part 22 and the vacuum pipeline 24.

[0065] Among them, through the exhaust port 26 in Figure 8The first exhaust aperture that gradually contracts from the self-exhaust inner port 261 to the exhaust outer port 262 in the horizontal projection direction shown, that is, through the exhaust port 26 with a flared-in shape, when sucking in the passing rotational airflow, the degree of airflow change caused by the vacuum pressure on the passing rotational airflow can be slowed down. Such a design of the exhaust port 26 conforms to the streamline characteristics of the annular gas flow and is more in line with the aerodynamic design, enabling the temperature control system to have a certain buffer time, being able to respond in a timely manner when the airflow changes, and controlling the temperature of the outer ring of the wafer in advance, enhancing the accuracy of the process chamber 20 in controlling the outer ring temperature, thereby improving the uniformity of the film thickness of the inner and outer rings on the wafer surface.

[0066] Furthermore, through the inner end interface 251 of the adapter 25 that has the same shape and size as the exhaust outer port 262, a seamless docking with the exhaust outer port 262 is formed, which can remove the deposition environment of particulate matter, avoid the deposition of particulate matter at the docking location, thereby effectively eliminating the problem that when there are steps at the connection between the exhaust port and the adapter in the past, particulate matter would accumulate at the dark corner position around the steps, preventing pollution to the process chamber 20 during chamber backpressure and improving the wafer yield.

[0067] In summary, the present utility model sets the exhaust port 26 to have a first exhaust aperture that gradually contracts from the self-exhaust inner port 261 to the exhaust outer port 262 in the horizontal projection direction to improve the shape of the contact part between the exhaust port 26 and the interior of the process chamber 20, making it conform to the streamline structure of the annular gas flow to conform to the aerodynamic design, so that the rotational airflow passing through the exhaust port 26 can be gently and gradually sucked into the exhaust port 26 along the gradually contracting first exhaust aperture of the exhaust port 26. Therefore, a temperature control reaction can be made in a timely manner when the airflow changes, and thus there is enough time to control the outer temperature at the exhaust port 26 in advance, enhancing the accuracy of the outer temperature control. At the same time, the uniformity of the gas distribution on the surface of the object to be processed is improved, thereby improving the uniformity of the deposited film thickness. Furthermore, by setting the inner end interface 251 of the adapter 25 to have the same shape and size as the exhaust outer port 262 to form a seamless docking with the exhaust port 26, the deposition environment of particulate matter is completely eliminated, and the yield is improved.

[0068] Although the embodiments of the present utility model have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present utility model described in the claims. Moreover, the present utility model described herein can have other embodiments and can be implemented or realized in various ways.

Claims

1. An exhaust pipeline, characterized in that: include: An exhaust port is arranged on a side wall of a process chamber, and the exhaust port includes an inner exhaust port and an outer exhaust port respectively located on the inner surface and the outer surface of the side wall. In the horizontal projection direction, the exhaust port has a first exhaust aperture that gradually shrinks from the inner exhaust port to the outer exhaust port.

2. The exhaust pipe according to claim 1, characterized in that: In the vertical projection direction, the exhaust port has a second exhaust port diameter that is consistent from the exhaust inner port to the exhaust outer port.

3. The exhaust pipe according to claim 2, characterized in that: It also includes a transition part, which is arranged on the outer surface of the side wall, and a transition interface is provided in the transition part. The transition interface includes an inner end interface located on the inner surface of the transition part close to the exhaust port and an outer end interface on the outer surface of the transition part away from the exhaust port, and the inner end interface has a shape and size consistent with the exhaust outer port, and is connected to the exhaust outer port.

4. The exhaust pipe according to claim 3, characterized in that: In the horizontal projection direction, the adapter has a first adapter diameter that gradually shrinks from the inner end interface to the outer end interface, and in the vertical projection direction, the adapter has a second adapter diameter that gradually expands from the inner end interface to the outer end interface.

5. The exhaust pipe according to claim 4, characterized in that: The exhaust port and the adapter port are coaxially arranged.

6. The exhaust pipe according to claim 5, characterized in that: The exhaust inner port is a first waist-shaped hole arranged in the horizontal direction, the exhaust outer port is a second waist-shaped hole arranged in the horizontal direction, the inner end interface is a third waist-shaped hole arranged in the horizontal direction, and the outer end interface is a circular hole. In the horizontal direction, the width of the first waist-shaped hole is greater than the width of the second waist-shaped hole, and the width of the second waist-shaped hole is consistent with the width of the third waist-shaped hole. In the vertical direction, the heights of the first waist-shaped hole, the second waist-shaped hole and the third waist-shaped hole are consistent, and the diameter of the circular hole of the outer end interface is smaller than the width of the third waist-shaped hole, and greater than the height of the third waist-shaped hole.

7. The exhaust pipe according to claim 4, characterized in that: In the horizontal projection direction, the contour line of the inner wall of the exhaust port located between the exhaust inner port and the exhaust outer port is straight or arc-shaped; and / or, in the horizontal or vertical projection direction, the contour line of the inner wall of the transition interface located between the inner end interface and the outer end interface is straight or arc-shaped, and the inner wall of the transition interface smoothly transitions between the first transition interface diameter and the second transition interface diameter; and / or, in the horizontal projection direction, the angle between the line connecting the same side ends of the exhaust inner port and the exhaust outer port and the axis is 30 to 60 degrees, or, in the horizontal projection direction, the angle between the line connecting the same side ends of the exhaust inner port and the exhaust outer port and the axis is 45 degrees.

8. The exhaust pipe according to claim 6, characterized in that: It also includes a vacuum pipeline, which is arranged on the outer surface of the adapter, and the vacuum pipeline is connected to the outer end interface through a port.

9. A process chamber, comprising the exhaust pipeline according to any one of claims 1 to 8.

10. The process chamber according to claim 9, characterized in that: It also includes a rotating base and an air inlet. The rotating base is arranged in the process chamber, and is used to carry the processing object and drive the processing object to rotate. The air inlet is arranged on the other side wall of the process chamber opposite to the exhaust port, and is used to introduce process gas into the process chamber to perform thin film deposition on the rotating processing object.