Wafer heater and chemical vapor deposition system

Abstract

The utility model relates to a wafer heater and a chemical vapor deposition system, which are used for solving the technical problem of non-uniform heat distribution and temperature control on the surface of the wafer heater. The wafer heater comprises a heating part which is used for supporting a wafer and heating the wafer and comprises an inner heating area which is arranged at a position corresponding to a central area of the wafer and an annular outer heating area which surrounds the outer side of the inner heating area and is concentrically arranged with the inner heating area; the interface part is arranged at the bottom of the heating part, and the control module is used for controlling the temperature of the inner heating area and the temperature of the annular outer heating area.

Description

Technical Field

[0001] The present disclosure relates to the technical field of chemical vapor deposition, and specifically, to a wafer heater and a chemical vapor deposition system. Background Art

[0002] Chemical vapor deposition (CVD) technology is a process in which gaseous substances undergo chemical reactions and transport reactions on a solid to produce solid deposits. It can help improve the properties of crystals or crystal films. Its most common use is to generate a new epitaxial single crystal layer on a certain crystal substrate through a chemical vapor deposition (CVD) system for manufacturing various microelectronic devices. A chemical vapor deposition system typically includes a reaction chamber and a wafer heater disposed in the reaction chamber. The wafer heater is used to support, fix, and heat the wafer (crystal substrate). Achieving a uniform temperature profile on the surface of the wafer heater is crucial for high-quality thin film deposition.

[0003] In the related art, the heat distribution and temperature control on the surface of the wafer heater are uneven, thus affecting the quality of the thin film formed on the wafer. Summary of the Utility Model

[0004] The purpose of the present disclosure is to provide a wafer heater and a chemical vapor deposition system to solve the technical problem of uneven heat distribution and temperature control on the surface of the wafer heater.

[0005] To achieve the above purpose, the present disclosure provides a wafer heater, including: a heating part for supporting and heating the wafer, including: an inner heating area disposed at a position corresponding to the central area of the wafer, and an annular outer heating area surrounding the outside of the inner heating area and concentrically arranged with the inner heating area; an interface part disposed at the bottom of the heating part, and a control module for controlling the temperatures of the inner heating area and the annular outer heating area respectively.

[0006] Optionally, the heating part includes a ceramic heating element, and the ceramic heating element includes: a first heating element disposed in the inner heating area, and a second heating element disposed in the annular outer heating area, wherein the first heating element and the second heating element are respectively communicatively connected to the control module through heating element wires passing through the interface part.

[0007] Optionally, the cross-section of the ceramic heating element is rectangular.

[0008] Optionally, the outer surface of the ceramic heating element is coated with an amorphous carbon layer.

[0009] Optionally, the first heating element is serpentinely wound in the inner heating area, and the second heating element is serpentinely wound in the annular outer heating area.

[0010] Optionally, the heating part further includes: a first thermocouple for monitoring the temperature at a position corresponding to the center point of the wafer on the heating part and communicatively connected to the control module; a second thermocouple for monitoring the temperature of the inner heating zone and communicatively connected to the control module; and a third thermocouple for monitoring the temperature of the annular outer heating zone and communicatively connected to the control module. The control module can control the temperatures of the inner heating zone and the annular outer heating zone respectively according to the temperatures measured by the first thermocouple, the second thermocouple, and the third thermocouple.

[0011] Optionally, the first thermocouple, the second thermocouple, and the third thermocouple are communicatively connected to the control module respectively through wires passing through the interface part.

[0012] Optionally, the heating part includes a plurality of concentrically arranged annular outer heating zones, and the control module can control the temperatures of the plurality of annular outer heating zones respectively.

[0013] Optionally, the outer diameter of the annular outer heating zone is equal to or greater than the diameter of the wafer.

[0014] Based on the above technical solution, the present disclosure further provides a chemical vapor deposition system, including: a reaction chamber, and the wafer heater in the above technical solution, wherein the heating part is accommodated in the reaction chamber, and the interface part extends out of the reaction chamber.

[0015] Through the above technical solution, the heating part of the wafer heater provided by the present disclosure has an inner heating zone and an annular outer heating zone. The inner heating zone is used to heat the central area of the wafer, and the annular outer heating zone is used to heat the outer ring area of the wafer. The control module can control the temperatures of the inner heating zone and the annular outer heating zone respectively to precisely control the temperature curves of different areas on the heating part, so that the heat distribution on the surface of the heating part is uniform, ensuring that the film formed on the surface of the wafer has good uniformity and deposition characteristics. The chemical vapor deposition system provided by the present disclosure has the same technical effects as the wafer heater in the above technical solution. To avoid unnecessary repetition, it will not be elaborated here.

[0016] Other features and advantages of the present disclosure will be described in detail in the subsequent specific implementation part. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings are used to provide a further understanding of the present disclosure, and constitute a part of the specification. Together with the following specific implementation, they are used to explain the present disclosure, but do not constitute a limitation to the present disclosure. In the drawings:

[0018] Figure 1It is a schematic structural diagram of a chemical vapor deposition system in a specific embodiment of the present disclosure;

[0019] Figure 2 is Figure 1 the explosion decomposition diagram of;

[0020] Figure 3 It is a schematic distribution diagram of the internal heating zone and the annular external heating zone of the heating part in a specific embodiment of the present disclosure;

[0021] Figure 4 It is a cross-sectional view of the wafer heater at one angle in a specific embodiment of the present disclosure;

[0022] Figure 5 It is a cross-sectional view of the wafer heater at another angle in a specific embodiment of the present disclosure.

[0023] Explanation of reference numerals

[0024] 100 - wafer, 200 - reaction chamber,

[0025] 1 - heating part, 101 - internal heating zone, 102 - annular external heating zone, 11 - lower heating plate, 12 - upper heating plate, 13 - ceramic heating element, 131 - first heating element, 132 - second heating element, 15 - bottom plate, 161 - first thermocouple, 162 - second thermocouple, 163 - third thermocouple,

[0026] 2 - interface part, 21 - heating element wire, 22 - ceramic shaft. Specific embodiment

[0027] The following will describe the specific embodiments of the present disclosure in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only for the purpose of illustrating and explaining the present disclosure, and are not intended to limit the present disclosure.

[0028] In the present disclosure, unless otherwise stated, the orientation terms such as "upper, lower" generally refer to the upper and lower of the wafer heater in the normal use state, referring to Figure 1 , Figure 2 , Figure 4 and Figure 5 the drawing directions of. "Inner, outer" refer to the inner and outer relative to the contour of the corresponding component itself. The terms "first, second" are used to distinguish one element from another, and do not have sequentiality and importance. In addition, when the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0029] According to the specific embodiment of the present disclosure, a wafer heater is provided, referring to Figures 1 to 5As shown, the wafer heater may include a heating part 1, an interface part 2, and a control module (not shown). Among them, the heating part 1 is used to support the wafer 100 and heat the wafer 100. The heating part 1 may include an inner heating area 101 and an annular outer heating area 102. Among them, the inner heating area 101 may be set at a position corresponding to the central area of the wafer 100. The annular outer heating area 102 may be generally constructed in an annular shape to substantially surround the outside of the inner heating area 101 and be concentrically arranged with the inner heating area 101. The interface part 2 may be set at the bottom of the heating part 1. The control module may be used to control the temperatures of the inner heating area 101 and the annular outer heating area 102 respectively. The inner heating area 101 and the annular outer heating area 102 may be communicatively connected to the control module through the interface part 2.

[0030] Through the above technical solution, the heating part 1 of the wafer heater provided by the present disclosure has an inner heating area 101 and an annular outer heating area 102. The inner heating area 101 is used to heat the central area of the wafer 100, and the annular outer heating area 102 is used to heat the outer ring area of the wafer 100. The control module can control the temperatures of the inner heating area 101 and the annular outer heating area 102 respectively to precisely control the temperature curves of different areas on the heating part 1, so that the heat distribution on the surface of the heating part 1 is uniform, ensuring that the film formed on the surface of the wafer 100 has good uniformity and deposition characteristics.

[0031] Since the wafer 100 is a circular sheet structure, referring to Figure 1 and Figure 2 as shown, the heating part 1 may be constructed as a disc-shaped structure, and the wafer 100 is placed on the upper surface of the heating part 1. The interface part 2 may be set at the central position of the bottom of the heating part 1. In order to facilitate the communication connection between the annular outer heating area 102 and the control module through the interface part 2, referring to Figure 3 as shown, a radially extending avoidance notch may be formed on the inner heating area 101, and a part of the annular outer heating area 102 may extend into the avoidance notch to approach the central position of the heating part 1, so as to facilitate the communication connection between the annular outer heating area 102 and the control module through the interface part 2.

[0032] In order to enable the inner heating area 101 and the annular outer heating area 102 to generate heat, referring to Figures 2 to 4 as shown, the heating part 1 may include a ceramic heating element 13. The ceramic heating element 13 may include a first heating element 131 and a second heating element 132. Among them, the first heating element 131 may be set in the inner heating area 101, and the second heating element 132 may be set in the annular outer heating area 102. The first heating element 131 and the second heating element 132 may be communicatively connected to the control module respectively through the heating element wires 21 passing through the interface part 2.

[0033] To prevent the wire 21 of the heating element from transferring heat to the wires of other surrounding components, refer to Figure 4 and Figure 5 As shown, a ceramic shaft 22 can be sleeved outside the wire 21 of the heating element, and this ceramic shaft 22 can play a role in heat insulation.

[0034] To improve the heating efficiency and heating uniformity of the upper surface of the heating part 1 by the ceramic heating element 13, refer to Figure 4 As shown, the cross-section of the ceramic heating element 13 can be rectangular. The ceramic heating element 13 with a rectangular cross-section has a larger heating area, and there will be no air gaps around it, which can improve the heat transfer efficiency of the ceramic heating element 13 and minimize the risk of local hot spots or cold spots, and improve the uneven heat distribution on the heating part 1.

[0035] In addition, to improve the durability of the ceramic heating element 13, the outer surface of the ceramic heating element 13 can also be coated with an amorphous carbon layer to increase its anti-wear ability.

[0036] To make the heat distribution uniform in the inner heating area 101 and the annular outer heating area 102, refer to Figure 2 and Figure 3 As shown, the first heating element 131 can be wound in a serpentine shape in the inner heating area 101 to fill the inner heating area 101, so that the heating area of the first heating element 131 in the inner heating area 101 is maximized. The second heating element 132 can be wound in a serpentine shape in the annular outer heating area 102 to fill the annular outer heating area 102, so that the heating area of the second heating element 132 in the annular outer heating area 102 is maximized.

[0037] To precisely control the temperature of each area on the heating part 1, refer to Figure 5 As shown, the heating part 1 can also include a first thermocouple 161, a second thermocouple 162, and a third thermocouple 163. Among them, the first thermocouple 161 is used to monitor the temperature of the position on the heating part 1 corresponding to the center point of the wafer 100. The temperature measured by the first thermocouple 161 provides a key reference for the temperature of the entire wafer 100. The second thermocouple 162 is used to monitor the temperature of the inner heating area 101, and the third thermocouple 163 is used to monitor the temperature of the annular outer heating area 102. The first thermocouple 161, the second thermocouple 162, and the third thermocouple 163 are respectively communicatively connected to the control module. The control module can control the temperatures of the inner heating area 101 and the annular outer heating area 102 respectively according to the temperatures measured by the first thermocouple 161, the second thermocouple 162, and the third thermocouple 163. The first thermocouple 161, the second thermocouple 162, and the third thermocouple 163 can provide a basis for the precise control of the control module for the inner heating area 101 and the annular outer heating area 102.

[0038] To enable the first thermocouple 161, the second thermocouple 162, and the third thermocouple 163 to be communicatively connected to the control module respectively, the first thermocouple 161, the second thermocouple 162, and the third thermocouple 163 can be communicatively connected to the control module through wires (not shown) passing through the interface portion 2 respectively.

[0039] In a specific embodiment of the present disclosure, as an example, the heating portion 1 may include an annular outer heating zone 102, and the outer diameter of the annular outer heating zone 102 is equal to or greater than the diameter of the wafer 100 to ensure that the outer ring portion of the wafer 100 can be sufficiently heated.

[0040] As another example not shown, the heating portion 1 may include a plurality of concentrically arranged annular outer heating zones 102, and the plurality of annular outer heating zones 102 are sleeved in sequence from inside to outside. The control module can control the temperatures of the plurality of annular outer heating zones 102 respectively through the interface portion 2. This can allow the surface of the heating portion 1 to have a more complex temperature control curve to meet the requirements of a specific chemical vapor deposition process. In this embodiment, the outer diameter of the annular outer heating zone 102 with the largest diameter is equal to or greater than the diameter of the wafer 100 to ensure that the outer ring portion of the wafer 100 can be sufficiently heated.

[0041] To facilitate the arrangement of the ceramic heating element 13 and each thermocouple, referring to Figure 2 and Figure 4 as shown, the heating portion 1 may include a bottom plate 15, a lower heating plate 11, and an upper heating plate 12 stacked in sequence from bottom to top. The ceramic heating element 13 can be embedded between the upper heating plate 12 and the lower heating plate 11. The upper heating plate 12 is used to place the wafer 100, that is, the wafer 100 is supported on the upper surface of the upper heating plate 12. The first thermocouple 161, the second thermocouple 162, and the third thermocouple 163 can all be disposed on the upper heating plate 12 to facilitate measuring the temperature of the upper heating plate 12.

[0042] Referring to Figure 4 and Figure 5 as shown, the interface portion 2 can be fixedly connected to the bottom plate 15. The bottom plate 15 can separate the interface portion 2 from the lower heating plate 11 to reduce the heat transfer from the lower heating plate 11 to the interface portion 2, thereby avoiding the interface portion 2 from malfunctioning and being damaged due to high temperature. Referring to Figure 5 as shown, the ends of the first thermocouple 161, the second thermocouple 162, and the third thermocouple 163 can pass through the lower heating plate 11 and the bottom plate 15 and extend into the interface portion 2 to be connected to the wires, and the end of the ceramic heating element 13 can pass through the lower heating plate 11 and the bottom plate 15 and extend into the interface portion 2 to be connected to the heating element wire 21.

[0043] For the convenience of accommodating the wire interface parts of each component on the wafer heater, the interface part 2 can be constructed as a sleeve-shaped structure extending vertically to facilitate the passage of wires. The upper end of the interface part 2 can be fixedly connected to the bottom plate 15. The ceramic shaft 22 for heat insulation of the heating element wire 21 is accommodated in the interface part 2 and is fixed to the inner wall of the interface part 2 by a high melting point and high strength plastic.

[0044] Based on the above technical solution, the present disclosure also provides a chemical vapor deposition system. Referring to Figure 1 as shown, the chemical vapor deposition system may include a reaction chamber 200 and the wafer heater in the above technical solution. The heating part 1 can be accommodated in the reaction chamber 200, and the control module can be arranged outside the reaction chamber 200 to avoid the high temperature in the reaction chamber 200 from affecting the operation of the control module. The interface part 2 can extend out of the reaction chamber 200 to facilitate the wires of each component in the heating part 1 to pass through the interface part 2 and be connected to the control module.

[0045] Through the above technical solution, the chemical vapor deposition system provided by the present disclosure has the same technical effects as the wafer heater in the above technical solution. To avoid unnecessary repetition, it will not be elaborated here.

[0046] The preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings. However, the present disclosure is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present disclosure, various simple modifications can be made to the technical solutions of the present disclosure, and these simple modifications all fall within the protection scope of the present disclosure.

[0047] In addition, it should be noted that, in the above specific embodiments, the various specific technical features described can be combined in any suitable manner without contradiction. To avoid unnecessary repetition, the present disclosure will not separately describe various possible combination methods.

[0048] In addition, any combination can be made between different embodiments of the present disclosure as long as it does not violate the idea of the present disclosure, and it should also be regarded as the content disclosed by the present disclosure.

Claims

1. A wafer heater, characterized in that: include: A heating part, used for supporting the wafer and heating the wafer, comprises: an inner heating zone, arranged at a position corresponding to the central area of ​​the wafer, and An annular outer heating zone surrounds the outer side of the inner heating zone and is arranged concentrically with the inner heating zone; an interface portion, arranged at the bottom of the heating portion, and A control module is used to control the temperatures of the inner heating zone and the annular outer heating zone respectively.

2. The wafer heater according to claim 1, characterized in that: The heating unit includes a ceramic heating element, and the ceramic heating element includes: a first heating element disposed in the inner heating zone, and A second heating element is disposed in the annular outer heating zone, Wherein, the first heating element and the second heating element are respectively connected to the control module for communication via heating element wires passing through the interface portion.

3. The wafer heater according to claim 2, characterized in that: The cross section of the ceramic heating element is rectangular.

4. The wafer heater according to claim 2, characterized in that: The outer surface of the ceramic heating element is coated with an amorphous carbon layer.

5. The wafer heater according to claim 2, characterized in that: The first heating element is coiled in a serpentine manner in the inner heating zone, The second heating element is coiled in a serpentine manner in the annular outer heating zone.

6. The wafer heater according to claim 1, characterized in that: The heating unit further comprises: a first thermocouple, used for monitoring the temperature of a position on the heating part corresponding to the center point of the wafer, and communicating with the control module; a second thermocouple, for monitoring the temperature of the inner heating zone, and communicating with the control module, and a third thermocouple, used for monitoring the temperature of the annular outer heating zone and communicating with the control module; The control module can control the temperatures of the inner heating zone and the annular outer heating zone respectively according to the temperatures measured by the first thermocouple, the second thermocouple and the third thermocouple.

7. The wafer heater according to claim 6, characterized in that: The first thermocouple, the second thermocouple and the third thermocouple are respectively connected to the control module for communication via wires passing through the interface portion.

8. The wafer heater according to claim 1, characterized in that: The heating part comprises a plurality of concentrically arranged annular outer heating zones, which are arranged in sequence from the inside to the outside, and the control module can control the temperatures of the plurality of annular outer heating zones respectively.

9. The wafer heater according to claim 1, characterized in that: The outer diameter of the annular outer heating zone is equal to or greater than the diameter of the wafer.

10. A chemical vapor deposition system, characterized in that: include: reaction chamber, and The wafer heater according to any one of claims 1 to 9, wherein the heating portion is accommodated in the reaction chamber, and the interface portion extends from the reaction chamber.

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