Semiconductor cleaning equipment
By designing a semiconductor cleaning device including the first and second cleaning agent spraying sections, the problem of insufficient cleaning dose of wafer edge spraying in the prior art is solved, and uniform cleaning of the wafer end surface and improved cleanliness are achieved.
Patent Information
- Application Number
- CN202421932242.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-09
- Publication Date
- 2025-05-27
- Estimated Expiration
- 2034-08-09
AI Technical Summary
When existing semiconductor cleaning equipment cleans the wafer, the spray cleaning dose of the edge of the wafer is insufficient, resulting in a difference in the amount of etching between the center and edge of the wafer.
A semiconductor cleaning device is designed, including a base and a cleaning assembly. The cleaning assembly includes a first cleaning agent spraying part and a second cleaning agent spraying part, the first cleaning agent spraying part is used to spray toward the central area of the wafer, and the second cleaning agent spraying part is used to spray toward the edge area of the wafer. The base and cleaning assembly can be rotated relative to ensure that the cleaning agent evenly covers all end faces of the wafer.
Through this design, the center area and edge area of the end face of the wafer are more uniform in the distribution of the cleaning agent, which improves the uniformity of the film flatness and etching amount after cleaning, and enhances the cleanliness of the wafer.
Smart Images
Figure CN222914746U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, and particularly relates to a semiconductor cleaning device. Background Art
[0002] The information provided in this part is only background information related to the present disclosure, and it is not necessarily prior art.
[0003] When the semiconductor cleaning device is in a state where the wafer is rotating, the cleaning agent nozzle sprays the cleaning agent towards the center of the wafer for the cleaning process. The amount of cleaning agent sprayed at the center of the wafer is sufficient, but the closer to the edge of the wafer, the phenomenon of insufficient cleaning agent spraying occurs. Therefore, after the cleaning process, there will be a difference in the etching amount between the center and the edge of the wafer. Summary of the Utility Model
[0004] The purpose of the utility model is to at least solve the technical problem that when the existing semiconductor cleaning device cleans the wafer, the amount of cleaning agent sprayed on the edge of the wafer is insufficient. This purpose is achieved through the following technical solutions:
[0005] The utility model provides a semiconductor cleaning device, including:
[0006] A base provided with a placement surface for placing the wafer;
[0007] A cleaning component, the cleaning component is disposed opposite to the base, and the base and the cleaning component are configured such that one of them can rotate relative to the other with an axis perpendicular to the placement surface as the rotation axis. The cleaning component includes a first cleaning agent spraying part and a second cleaning agent spraying part. Along the direction perpendicular to the rotation axis, at least part of the spraying area of the first cleaning agent spraying part is located between the spraying area of the second cleaning agent spraying part and the rotation axis, and the spraying area of the second cleaning agent spraying part is configured to cover at least part of the edge of the placement surface.
[0008] The semiconductor cleaning equipment proposed by the present utility model uses a base to carry a wafer. The cleaning component has a first cleaning agent spraying part and a second cleaning agent spraying part with different spraying areas. The first cleaning agent spraying part is used to spray the cleaning agent onto the central area of the end face at one axial end of the wafer, and the second cleaning agent spraying part is used to spray the cleaning agent onto the edge area of the end face at one axial end of the wafer. One of the base and the cleaning component can rotate relative to the other around the axis of the wafer, so that the cleaning agent sprayed by the first cleaning agent spraying part and the second cleaning agent spraying part covers the entire end face at one axial end of the wafer, thereby making the distribution of the cleaning agent in the central area and the edge area of the end face of the wafer more uniform, improving the flatness of the film quality after wafer cleaning, improving the difference in etching amount, and the cleaning agent sprayed onto the end face of the wafer combines with the spraying pressures of the first cleaning agent spraying part and the second cleaning agent spraying part to clean the end face of the wafer, improving the cleanliness of the wafer after cleaning.
[0009] In addition, the semiconductor cleaning device according to the present utility model may further have the following additional technical features:
[0010] In some embodiments of the present utility model, the first cleaning agent spraying part is coaxially arranged with the rotation axis, and the spraying area of the first cleaning agent spraying part includes a first part and a second part. Along the direction perpendicular to the rotation axis, the first part and the second part are respectively located on both sides of the rotation axis.
[0011] In some embodiments of the present utility model, the number of the second cleaning agent spraying parts is multiple, and the multiple second cleaning agent spraying parts are arranged at intervals around the rotation axis.
[0012] In some embodiments of the present utility model, along the direction perpendicular to the rotation axis, the cross-section of the spraying area of the first cleaning agent spraying part is fan-shaped or triangular, and the angle closest to the first cleaning agent spraying part in the cross-section is an obtuse angle.
[0013] In some embodiments of the present utility model, at least part of the spraying area of the first cleaning agent spraying part coincides with at least part of the spraying area of the second cleaning agent spraying part.
[0014] In some embodiments of the present utility model, the cleaning component further includes a mounting part, a first pipeline and a second pipeline. The first cleaning agent spraying part and the second cleaning agent spraying part are both mounted on the mounting part. One end of the first pipeline is inserted into the mounting part and communicated with the first cleaning agent spraying part, and one end of the second pipeline is inserted into the mounting part and communicated with the second cleaning agent spraying part.
[0015] In some embodiments of the present utility model, the first cleaning agent spraying part is a mist spray head.
[0016] In some embodiments of the present utility model, the base is configured to be rotatable about the rotation axis, and the semiconductor cleaning device further includes a driving device, which is in transmission connection with the base and is used to drive the base to rotate.
[0017] In some embodiments of the present utility model, the second cleaning agent spraying part is rotatably connected to the mounting part and can rotate relative to the mounting part about a second axis, and the second axis is perpendicular to or forms an angle with the rotation axis.
[0018] In some embodiments of the present utility model, the outer shape of the placing surface is configured to be adapted to the end face of one axial end of the wafer. Description of the Drawings
[0019] By reading the following detailed description of the preferred embodiments, various other advantages and benefits will become clear to those of ordinary skill in the art. The drawings are only for the purpose of showing the preferred embodiments and are not considered to be a limitation of the present utility model. Moreover, throughout the drawings, the same reference numerals are used to represent the same components. In the drawings:
[0020] Figure 1 Schematically shows a schematic structural diagram of a semiconductor cleaning device according to an embodiment of the present utility model;
[0021] Figure 2 Schematically shows a top view of the spraying area of a semiconductor cleaning device according to an embodiment of the present utility model;
[0022] Figure 3 Schematically shows a side view of the spraying area of a semiconductor cleaning device according to an embodiment of the present utility model;
[0023] The reference numerals in the drawings are represented as follows:
[0024] 100, wafer;
[0025] 10, base; 11, rotation axis; 12, placing surface;
[0026] 20, cleaning assembly; 21, first cleaning agent spraying part; 22, second cleaning agent spraying part; 23, first spraying area; 231, first part; 232, second part; 24, second spraying area; 25, mounting part; 26, first pipeline; 27, second pipeline. Detailed Embodiments
[0027] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure can be more thoroughly understood and the scope of the present disclosure can be fully conveyed to those skilled in the art.
[0028] It should be understood that the terms used herein are for the purpose of describing particular example embodiments only and are not intended to be limiting. Unless the context clearly dictates otherwise, the singular forms "a", "an", and "the" as used herein may also include the plural forms. The terms "comprising", "including", "containing", and "having" are inclusive and thus specify the presence of stated features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless the order of performance is explicitly stated. It should also be understood that additional or alternative steps may be used.
[0029] Although the terms first, second, third, etc. may be used herein to describe multiple elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer, or section from another. Unless the context clearly indicates otherwise, terms such as "first" and "second" and other numerical terms used herein do not imply an order or sequence. Thus, the first element, component, region, layer, or section discussed below may be referred to as the second element, component, region, layer, or section without departing from the teachings of the example embodiments.
[0030] For ease of description, spatial relative relationship terms may be used in the text to describe the relationship of one element or feature shown in the figure with respect to another element or feature. These relative relationship terms are, for example, "inner", "outer", "inner side", "outer side", "below", "beneath", "above", "over", etc. Such spatial relative relationship terms are intended to include different orientations of the device during use or operation other than the orientations depicted in the figure. For example, if the device in the figure is flipped, an element described as "below" or "beneath" other elements or features will then be oriented as "above" or "over" other elements or features. Thus, the exemplary term "below" can include both upward and downward orientations. The device may be otherwise oriented (rotated 90 degrees or in other directions) and the spatial relative relationship descriptors used in the text are accordingly interpreted.
[0031] As Figures 1 to 3 shown, Figure 1 the dashed line in the figure indicates the rotation axis 11, Figure 1 where 23 in the figure represents the first spraying area, which is the entire spraying area of the first cleaning agent spraying part 21, Figure 1 where 24 in the figure represents the second spraying area, which is the entire spraying area of the second cleaning agent spraying part 22. The present utility model provides a semiconductor cleaning device, including a base 10 and a cleaning assembly 20. The base 10 is provided with a placement surface 12 for placing a wafer 100. The base 10 and the cleaning assembly 20 are configured such that one of the two can rotate relative to the other with the axis perpendicular to the wafer 100 as the rotation axis 11. The cleaning assembly 20 includes a first cleaning agent spraying part 21 and a second cleaning agent spraying part 22. Along the direction perpendicular to the rotation axis 11, at least a part of the spraying area of the first cleaning agent spraying part 21 is located between the spraying area of the second cleaning agent spraying part 22 and the rotation axis 11. The spraying area of the second cleaning agent spraying part 22 is configured to cover at least a part of the edge of the placement surface 12.
[0032] It can be understood that the cleaning of the wafer 100 is a process of removing contaminants generated during the continuous processing and polishing of the wafer 100 due to contact with various organic substances, particles, and metals. The base 10 can refer to the existing structure of the base 10. The base 10 can be generally frustum-shaped or cubic-shaped. A placement surface 12 for placing the wafer 100 is formed at the top of the base 10. Grooves or limiting structures can be provided on the side of the placement surface 12 for fixing the wafer 100. The cleaning assembly 20 can be composed of a containing box, a delivery pump, pipelines, a first cleaning agent spraying part 21, and a second cleaning agent spraying part 22. The containing cavity is used to contain the cleaning agent. When high-concentration chemical agents such as SPM, LAL, and POLY are selected as the cleaning agent according to needs (wherein, SPM refers to a mixed solution of sulfuric acid and hydrogen peroxide, LAL refers to a cleaning solution containing fluoride, and POLY refers to a cleaning solution of polysilicon), the delivery pump is arranged on the pipeline. The first cleaning agent spraying part 21 and the second cleaning agent spraying part 22 are communicated with the containing cavity through the pipeline. The delivery pump transports the cleaning agent to the first cleaning agent spraying part 21 and the second cleaning agent spraying part 22 for spraying. The first cleaning agent spraying part 21 and the second cleaning agent spraying part 22 can be selected as a mist nozzle or a multi-hole nozzle according to actual needs. The first cleaning agent spraying part 21 can be arranged on the axis of the wafer 100, and the spraying direction is set towards the circle of the wafer 100, so that the spraying range of the first cleaning agent spraying part 21 covers the central area of the wafer 100. The second cleaning agent spraying part 22 can be arranged on the outer periphery of the first cleaning agent spraying part 21, and the spraying direction is set towards the edge of the wafer 100, so that the spraying range of the second cleaning agent spraying part 22 covers a part of the edge of the wafer 100. The base 10 can be driven to rotate by a motor, so that the wafer 100 on the base 10 rotates accordingly, so that the spraying range of the cleaning assembly 20 covers the entire end face of the wafer 100 as the wafer 100 rotates, thereby improving the uniformity of the film quality on the end face of the wafer 100. The first cleaning agent spraying part 21 and the second cleaning agent spraying part 22 can also be driven to rotate by a motor. At this time, the wafer 100 remains stationary, and the cleaning assembly 20 rotates and sprays, which can also achieve the effect of covering the entire end face of the wafer 100 with the spraying area.
[0033] With the vigorous development of semiconductor technology, the requirements for the process of cleaning the wafer 100 are getting higher and higher. The semiconductor cleaning equipment proposed by the present utility model has a base 10 for carrying the wafer 100. The cleaning component 20 has a first cleaning agent spraying part 21 and a second cleaning agent spraying part 22 with different spraying areas. The first cleaning agent spraying part 21 is used to spray the cleaning agent onto the central area of the end face at one axial end of the wafer 100, and the second cleaning agent spraying part 22 is used to spray the cleaning agent onto the edge area of the end face at one axial end of the wafer 100. One of the base 10 and the cleaning component 20 can rotate relative to the other around the axis 11 of the wafer 100, so that the cleaning agent sprayed by the first cleaning agent spraying part 21 and the second cleaning agent spraying part 22 covers the entire end face at one axial end of the wafer 100. Furthermore, the central area and the edge area of the end face of the wafer 100 are more evenly distributed with the cleaning agent, thereby improving the flatness of the film quality of the wafer 100 after cleaning, improving the difference in etching amount, and the cleaning agent sprayed on the end face of the wafer 100 combines with the spraying pressures of the first cleaning agent spraying part 21 and the second cleaning agent spraying part 22 to clean the end face of the wafer 100, improving the cleanliness of the wafer 100 after cleaning.
[0034] In some embodiments of the present utility model, the first cleaning agent spraying part 21 is coaxially arranged with the rotation axis 11. The spraying area of the first cleaning agent spraying part 21 includes a first part 231 and a second part 232. Along the direction perpendicular to the rotation axis 11, the first part 231 and the second part 232 are respectively located on both sides of the rotation axis 11.
[0035] It can be understood that the first cleaning agent spraying part 21 can be arranged on the rotation axis 11 so that the spraying direction of the first cleaning agent spraying part 21 can face the center of the wafer 100. And the cross-section of the spraying area of the first cleaning agent spraying part 21 along the axial direction of the wafer 100 is set as a sector. The first part 231 and the second part 232 of the spraying area of the first cleaning agent spraying part 21 are located on both sides of the rotation axis 11, so that the spraying area of the first cleaning agent spraying part 21 can cover the central area of the wafer 100. This central area refers to the area covered by extending a certain range outward with the center of the end face of the wafer 100 facing the cleaning component 20 as the center. Thus, it cooperates with the spraying area of the second cleaning agent spraying part 22 to cover the edge of the wafer 100, so that the entire end face of the wafer 100 can be covered by the cleaning component 20. The film quality uniformity of the end face of the wafer 100 is improved. Furthermore, the etching effect of the wafer 100 is improved.
[0036] In some embodiments of the present utility model, the number of the second cleaning agent spraying parts 22 is multiple, and the multiple second cleaning agent spraying parts 22 are arranged at intervals around the rotation axis 11.
[0037] It can be understood that a plurality of second cleaning agent spraying parts 22 can be arranged in the circumferential direction of the first cleaning agent spraying part 21. For example, two second cleaning agent spraying parts 22 symmetrical about the rotation axis 11 are arranged, so that the spraying range is larger. Cooperating with the rotation of the wafer 100 or the rotation of the cleaning assembly 20, a uniform film quality can be formed on the end face of the wafer 100. Thereby improving the etching effect of the wafer 100.
[0038] In some embodiments of the present utility model, the spraying angle α of the first cleaning agent spraying part 21 is an obtuse angle. So that the first cleaning agent spraying part 21 covers a larger range of the end face of the wafer 100 at the same distance from the wafer 100, improving the film quality uniformity of the end face of the wafer 100. Further improving the etching effect of the wafer 100.
[0039] In some embodiments of the present utility model, a partial spraying area of the first cleaning agent spraying part 21 coincides with a partial spraying area of the second cleaning agent spraying part 22. Since it is difficult for the boundary of the spraying area of the first cleaning agent spraying part 21 to be completely combined and transitioned with the boundary of the spraying area of the second cleaning agent spraying part 22, a partial spraying area of the first cleaning agent spraying part 21 can be set to coincide with a partial spraying area of the second cleaning agent spraying part 22. Specifically, the outer peripheral spraying area of the first cleaning agent spraying part 21 coincides with the inner spraying area of the second cleaning agent spraying part 22, so that the spraying area of the first cleaning agent spraying part 21 can be connected to the spraying area of the second cleaning agent spraying part 22, reducing the uncovered area on the end face of the wafer 100, thereby making the film quality distribution on the end face of the wafer 100 more uniform.
[0040] In some embodiments of the present utility model, the cleaning assembly 20 further includes a mounting part 25, a first pipeline 26 and a second pipeline 27. The first cleaning agent spraying part 21 and the second cleaning agent spraying part 22 are both mounted on the mounting part 25. One end of the first pipeline 26 is inserted into the mounting part 25 and communicated with the first cleaning agent spraying part 21. One end of the second pipeline 27 is inserted into the mounting part 25 and communicated with the second cleaning agent spraying part 22.
[0041] It can be understood that the installation part 25 can be of a cylindrical or frustum-shaped structure. There are multiple channels inside the installation part 25. The first cleaning agent spraying part 21 can be installed on the installation part 25 by means of clamping or screwing and is communicated with the channels inside the installation part 25. The first pipeline 26 is inserted into this channel to achieve communication with the first cleaning agent spraying part 21. Similarly, the second cleaning agent spraying part 22 can be installed on the installation part 25 by means of clamping or screwing and is communicated with another channel inside the installation part 25. The second pipeline 27 is inserted into this channel to achieve communication with the second cleaning agent spraying part 22. By setting the installation part 25 to fix the cleaning agent spraying part and the first pipeline 26 and the second pipeline 27, the overall reliability is improved. The other ends of the first pipeline 26 and the second pipeline 27 can be communicated to the accommodation cavity, and a delivery pump is provided to introduce the cleaning agent into the first cleaning agent spraying part 21 and the second cleaning agent spraying part 22.
[0042] In some embodiments of the present invention, the first cleaning agent spraying part 21 is a mist nozzle. Specifically, the first cleaning agent spraying part 21 can select an existing mist nozzle, so that the cleaning agent sprayed on the end face of the wafer 100 is more evenly distributed, reducing the blind area of the spraying area.
[0043] In some embodiments of the present invention, the base 10 is configured to be able to rotate around the rotation axis 11. The semiconductor cleaning device further includes a driving device, and the driving device is in transmission connection with the base 10. The driving device is used to drive the base 10 to rotate. Specifically, the driving device can select a motor, and the motor can be in transmission connection with the gear on the base 10. The motor can drive the base 10 to rotate, and then drive the wafer 100 on the base 10 to rotate, so that each part of the end face of the wafer 100 is sprayed by the cleaning component 20, improving the coverage range of the cleaning agent, and further making the film quality distribution on the end face of the wafer 100 more uniform.
[0044] In some embodiments of the present invention, the second cleaning agent spraying part 22 is rotatably connected to the installation part 25 and can rotate relative to the installation part around a second axis, and the second axis is perpendicular to or at an angle with the rotation axis 11. So that along the direction perpendicular to the rotation axis 11, the spraying direction of the second cleaning agent spraying part 22 can be adjusted. Specifically, the second cleaning agent spraying part 22 can be installed on the installation part 25 by means of hinge connection and has the function of adjusting the angle. During actual use, the installation angle of the second cleaning agent spraying part 22 can be adjusted, and then the spraying angle α of the second cleaning agent spraying part 22 can be adjusted, so that the second cleaning agent spraying part 22 can adapt to wafers 100 of different sizes, improving the adaptability of the semiconductor cleaning device.
[0045] In some embodiments of the present utility model, the outer shape of the placement surface 12 is configured to be adapted to the end face of one axial end of the wafer 100. A pit may be provided at the top end of the base 10, and the bottom surface of the pit is the placement surface 12. The placement surface 12 may be set to be circular and have a size close to that of the wafer 100, so that the pit can limit the wafer 100 and prevent the wafer 100 from moving during the rotation of the base 10.
[0046] The above are only the preferred specific embodiments of the present utility model, but the protection scope of the present utility model is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed by the present utility model should be covered by the protection scope of the present utility model. Therefore, the protection scope of the present utility model should be subject to the protection scope of the claims.
Claims
1. A semiconductor cleaning device, characterized in that: include: A base having a placement surface for placing the wafer; A cleaning component, wherein the cleaning component is arranged opposite to the base, and the base and the cleaning component are configured so that one of them can rotate relative to the other with an axis perpendicular to the placement surface as a rotation axis, the cleaning component includes a first cleaning agent injection portion and a second cleaning agent injection portion, along a direction perpendicular to the rotation axis, at least a portion of the injection area of the first cleaning agent injection portion is located between the injection area of the second cleaning agent injection portion and the rotation axis, and the injection area of the second cleaning agent injection portion is configured to cover at least a portion of the edge of the placement surface.
2. The semiconductor cleaning device according to claim 1, characterized in that: The first cleaning agent injection portion is coaxially arranged with the rotating shaft, and the injection area of the first cleaning agent injection portion includes a first part and a second part. Along a direction perpendicular to the rotating shaft, the first part and the second part are respectively located on both sides of the rotating shaft.
3. The semiconductor cleaning device according to claim 2, characterized in that: The number of the second cleaning agent spraying parts is plural, and the plurality of the second cleaning agent spraying parts are arranged around the rotation axis at intervals.
4. The semiconductor cleaning device according to claim 2, characterized in that: Along the direction perpendicular to the rotation axis, the cross section of the spraying region of the first cleaning agent spraying portion is fan-shaped or triangular, and the angle of the cross section closest to the first cleaning agent spraying portion is an obtuse angle.
5. The semiconductor cleaning device according to claim 1, characterized in that: A partial spraying area of the first cleaning agent spraying portion overlaps with at least a partial spraying area of the second cleaning agent spraying portion.
6. The semiconductor cleaning device according to claim 1, characterized in that: The cleaning component also includes a mounting portion, a first pipeline and a second pipeline. The first cleaning agent injection portion and the second cleaning agent injection portion are both mounted on the mounting portion. One end of the first pipeline is inserted into the mounting portion and communicated with the first cleaning agent injection portion. One end of the second pipeline is inserted into the mounting portion and communicated with the second cleaning agent injection portion.
7. The semiconductor cleaning device according to claim 1, characterized in that: The first cleaning agent spraying part is a mist spraying head.
8. The semiconductor cleaning device according to claim 1, characterized in that: The base is configured to be rotatable about the rotation shaft. The semiconductor cleaning device further includes a driving device, which is transmission-connected to the base and is used to drive the base to rotate.
9. The semiconductor cleaning device according to claim 6, characterized in that: The second cleaning agent spraying portion is rotatably connected to the mounting portion and can rotate relative to the mounting portion around a second axis, and the second axis is perpendicular to or at an angle to the rotation axis.
10. The semiconductor cleaning device according to any one of claims 1 to 9, characterized in that: The outer shape of the placement surface is configured to match the end surface of one axial end of the wafer.