Three-level power structure and power converter

Abstract

The utility model provides a three-level power structure and a power converter, the three-level power structure comprises a plurality of first power switch tubes, a plurality of second power switch tubes and a bottom plate, and the switching frequency of the second power switch tubes is smaller than that of the first power switch tubes; the plurality of first power switch tubes are arranged on the bottom plate at intervals, and the plurality of second power switch tubes are arranged on the bottom plate at intervals; because the switching frequency of the second power switch tubes is smaller than the switching frequency of the first power switch tubes, the heat dissipated by the second power switch tubes is also smaller than the heat dissipated by the first power switch tubes, and the distance between the two adjacent first power switch tubes is larger than the distance between the two adjacent second power switch tubes. In other words, the first power switch tubes with high heat are more dispersedly arranged, so that the heat dissipation uniformity between the first power switch tubes and the second power switch tubes can be improved.

Description

Technical Field

[0001] This application belongs to the technical field of power devices, and particularly relates to a three-level power structure and a power converter. Background Art

[0002] With the rapid development of power electronics technology, three-level power structures have been widely used in fields such as power, metallurgy, petroleum, and chemical industry due to their high energy conversion efficiency and excellent output performance.

[0003] However, with the increase in power density and the complexity of the operating environment, the heat dissipation problem of three-level power structures has gradually become prominent, and excessive local temperature has become an important factor affecting the performance and reliability of equipment.

[0004] Therefore, how to improve the heat dissipation uniformity of three-level power structures is a problem that those skilled in the art need to solve currently. Utility Model Content

[0005] The purpose of this application is to provide a three-level power structure and a power converter, aiming to solve the problem of low heat dissipation uniformity of the three-level power structure in the traditional technology.

[0006] The first aspect of the embodiments of this application proposes a three-level power structure, and the three-level power structure includes:

[0007] Multiple first power switching tubes;

[0008] Multiple second power switching tubes, and the switching frequency of the second power switching tubes is less than the switching frequency of the first power switching tubes;

[0009] A bottom plate, multiple of the first power switching tubes are arranged on the bottom plate at intervals, multiple of the second power switching tubes are arranged on the bottom plate at intervals, and the distance between adjacent two of the first power switching tubes is greater than the distance between adjacent two of the second power switching tubes.

[0010] In some embodiments of this application, the distance between adjacent first power switching tube and the second power switching tube is greater than the distance between adjacent two of the second power switching tubes.

[0011] In some embodiments of this application, the distance between adjacent first power switching tube and the second power switching tube is less than the distance between adjacent two of the first power switching tubes.

[0012] In some embodiments of the present application, the three-level power structure is used to connect an AC power supply and a DC power supply. The plurality of first power switching tubes include a first switching tube, a second switching tube, a third switching tube, and a fourth switching tube connected in series in sequence. One end of the first switching tube away from the second switching tube is used to connect to the positive pole of the AC power supply, and one end of the fourth switching tube away from the third switching tube is used to connect to the negative pole of the AC power supply; between the second switching tube and the third switching tube is used to connect the DC power supply;

[0013] The plurality of second power switching tubes include a fifth switching tube and a sixth switching tube. One end of the fifth switching tube is connected between the first switching tube and the second switching tube, and one end of the sixth switching tube is connected between the third switching tube and the fourth switching tube.

[0014] In some embodiments of the present application, the other end of the fifth switching tube is grounded, and the other end of the sixth switching tube is grounded.

[0015] In some embodiments of the present application, the first switching tube, the second switching tube, the third switching tube, the fourth switching tube, the fifth switching tube, and the sixth switching tube are selected from MOS tubes, IGBT tubes, and triodes.

[0016] In some embodiments of the present application, the three-level power structure includes a heat dissipation layer, a substrate layer, and a conductive layer arranged in sequence. The plurality of first power switching tubes and the plurality of second power switching tubes are arranged on the conductive layer; wherein, the projections of the plurality of first power switching tubes and the plurality of second power switching tubes on the heat dissipation layer fall on the heat dissipation layer.

[0017] In some embodiments of the present application, the conductive layer includes a first conductive region, a second conductive region, a third conductive region, a fourth conductive region, and a fifth conductive region that do not contact each other. The third switching tube is arranged on the first conductive region, the fourth switching tube is arranged on the second conductive region, the second switching tube and the fifth switching tube are arranged on the third conductive region, the sixth switching tube is arranged on the fourth conductive region, and the first switching tube is arranged on the fifth conductive region;

[0018] The pins of the first switching tube extend to the third conductive region and are electrically connected to the third conductive region;

[0019] The pins of the second switching tube extend to the first conductive region and are electrically connected to the first conductive region.

[0020] The pins of the third switching tube extend to the second conductive region and are electrically connected to the second conductive region;

[0021] The pin of the fifth switching tube extends to the fourth conductive region and is electrically connected to the fourth conductive region;

[0022] The pin of the sixth switching tube extends to the third conductive region and is electrically connected to the third conductive region.

[0023] In some embodiments of the present application, the number of the first switching tubes is at least two, at least two of the first switching tubes are connected in parallel, and at least two of the first switching tubes are arranged at intervals on the fifth conductive region;

[0024] The number of the second switching tubes is at least two, at least two of the second switching tubes are connected in parallel, and at least two of the second switching tubes are arranged at intervals on the third conductive region;

[0025] The number of the third switching tubes is at least two, at least two of the third switching tubes are connected in parallel, and at least two of the third switching tubes are arranged at intervals on the first conductive region;

[0026] The number of the fourth switching tubes is at least two, at least two of the fourth switching tubes are connected in parallel, and at least two of the fourth switching tubes are arranged at intervals on the third conductive region;

[0027] The number of the fifth switching tubes is at least two, at least two of the fifth switching tubes are connected in parallel, and at least two of the fifth switching tubes are arranged at intervals on the third conductive region;

[0028] Wherein, the distance between at least two of the third switching tubes is greater than the distance between at least two of the first switching tubes, the distance between two of the fourth switching tubes, the distance between two of the fifth switching tubes, and the distance between two of the sixth switching tubes;

[0029] And / or, the distance between at least two of the second switching tubes is greater than the distance between at least two of the first switching tubes, the distance between two of the fourth switching tubes, the distance between two of the fifth switching tubes, and the distance between two of the sixth switching tubes.

[0030] In a second aspect, the present application further provides a power converter, including the three-level power structure described above.

[0031] The beneficial effects of the embodiments of the present utility model compared with the prior art are as follows: For the above-mentioned three-level power structure and power converter, the three-level power structure includes a plurality of first power switching tubes, a plurality of second power switching tubes, and a bottom plate. The switching frequency of the second power switching tubes is less than that of the first power switching tubes; the plurality of first power switching tubes are arranged at intervals on the bottom plate, and the plurality of second power switching tubes are arranged at intervals on the bottom plate; since the switching frequency of the second power switching tubes is less than that of the first power switching tubes, the heat dissipated by the second power switching tubes is also less than that of the first power switching tubes. In this application, by setting the distance between adjacent two first power switching tubes to be greater than the distance between adjacent two second power switching tubes, that is, arranging the first power switching tubes with higher heat more dispersedly, it is beneficial to improve the heat dissipation uniformity between the first power switching tubes and the second power switching tubes. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 FIG. is a schematic structural diagram of a three-level power structure provided by an embodiment of the present application;

[0033] Figure 2 FIG. is a schematic circuit diagram of a three-level power structure provided by an embodiment of the present application;

[0034] Figure 3 FIG. is a schematic structural diagram of a three-level power structure provided by another embodiment of the present application;

[0035] Figure 4 FIG. is a schematic structural diagram of a three-level power structure provided by still another embodiment of the present application.

[0036] Specific element symbol description: 100 - bottom plate, 110 - conductive layer, 111 - first conductive region, 112 - second conductive region, 113 - third conductive region, 114 - fourth conductive region, 115 - fifth conductive region, 120 - substrate layer, 130 - heat dissipation layer, 200 - first power switching tube, 210 - first switching tube, 220 - second switching tube, 230 - third switching tube, 240 - fourth switching tube, 300 - second power switching tube, 310 - fifth switching tube, 320 - sixth switching tube, 400 - pin. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0037] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0038] It should be noted that when an element is referred to as being "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0039] It should be understood that the orientation or positional relationship indicated by terms such as "length", "width", "upper", "lower", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.

[0040] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, "a plurality of" means two or more, unless otherwise specifically defined.

[0041] It should be known that with the increasing demand for low-altitude aircraft such as large-load drones, cargo drones, low-altitude flying taxis, etc., the demand for small-size, low-weight, and high-power aviation power converters has increased. Smaller size and lighter weight are equivalent to the long-term cost-effectiveness of aviation, so the application of high-power all-SiC power modules in low-altitude aircraft has gradually increased.

[0042] As a third-generation semiconductor material, SiC MOSFET has characteristics such as high thermal conductivity, high saturated electron drift rate, and high breakdown field strength compared with Si-based IGBTs, and is particularly suitable for application scenarios under harsh conditions such as high temperature, high power, high voltage, high frequency, and radiation resistance. Power density is an important aspect of the technical value of devices, which is more prominent in aircraft. Because under the same power conditions, the chip area of SiC MOSFET is much smaller than that of IGBT. For example, the chip size of 100A / 1200V SiC MOSFET is about one-fifth of the sum of IGBT and FRD chips. Therefore, from these aspects, SiC chips are more suitable for the aircraft field.

[0043] With the rapid development of power electronics technology, three-level power structures have been widely used in the fields of power, metallurgy, petroleum, chemical industry, etc. due to their high energy conversion efficiency and excellent output performance. Three-level power structures usually use SiC power tubes. However, with the increase in power density and the complexity of the operating environment, the heat generated by different power tubes may vary, which gradually highlights the heat dissipation problem of three-level power structures, and excessive local temperature becomes an important factor affecting the performance and reliability of equipment.

[0044] In related technologies, neutral point clamped three-level (NPC) and active neutral point clamped three-level (ANPC) are the mainstream topologies of three-level power modules; however, in the operation process of NPC three-level inverters, the power device losses are uneven, some devices have large losses and generate serious heat, resulting in a relatively high chip junction temperature, which greatly limits the improvement of the capacity and switching frequency of power conversion devices. The current three-level power modules are mainly designed and optimized with the inverter operating condition (power factor close to 1) as the goal. ANPC uses switching devices to replace the clamping diodes in the traditional NPC topology. During the commutation process, the loss distribution of power devices can be adjusted by reasonably switching the redundant zero-voltage states in the NPC topology to achieve balanced control of the junction temperature. However, there is still a problem of uneven heat dissipation, which may even cause the circuit board to deform severely.

[0045] Therefore, this application makes improvements to the related three-level power structure and power converter based on this.

[0046] Please refer to Figure 1 , Figure 1 which shows the structural schematic diagram of the three-level power structure provided in this embodiment. A three-level power structure of this embodiment includes a plurality of first power switching tubes 200, a plurality of second power switching tubes 300, and a bottom plate 100. The switching frequency of the second power switching tubes 300 is less than that of the first power switching tubes 200; the plurality of first power switching tubes 200 are arranged at intervals on the bottom plate 100, the plurality of second power switching tubes 300 are arranged at intervals on the bottom plate 100, and the distance between two adjacent first power switching tubes 200 is greater than the distance between two adjacent second power switching tubes 300.

[0047] It should be explained that three-level structures are usually used in power electronics applications that require high-precision and high-efficiency control, such as inverters, DC-DC converters, etc. Compared with traditional two-level structures, three-level structures can provide a smaller output voltage change step under the same DC voltage, thereby improving the accuracy and waveform quality of the output voltage. The first power switching tubes 200 can be used to achieve the main power conversion or control functions, and the second power switching tubes 300 can be used for auxiliary control, protection, or other functions.

[0048] Current three-level power structures mostly balance power consumption through algorithm optimization to balance heat, which requires high requirements for circuits and algorithms. Since the switching frequency of the second power switch 300 is less than that of the first power switch 200, the heat dissipated by the second power switch 300 is also less than that of the first power switch 200. In this application, the distance between two adjacent first power switches 200 is set to be greater than the distance between two adjacent second power switches 300, that is, the first power switches 200 with higher heat are arranged more dispersedly, which is beneficial to improving the heat dissipation uniformity between the first power switch 200 and the second power switch 300.

[0049] In some embodiments of this application, please refer to Figure 2 , Figure 2 which shows a schematic circuit diagram of the three-level power structure provided in this embodiment; among them, the first switch 210 corresponds to the first MOS transistor T1, the second switch 220 corresponds to the second MOS transistor T2, the third switch 230 corresponds to the second MOS transistor T3, the fourth switch 240 corresponds to the second MOS transistor T4, the fifth switch 310 corresponds to the second MOS transistor T5, the sixth switch 320 corresponds to the second MOS transistor T6, DC+ corresponds to the positive pole of the AC power supply, DC- corresponds to the negative pole of the AC power supply, and AC corresponds to the DC power supply.

[0050] The three-level power structure of this embodiment is used to connect an AC power supply and a DC power supply. The multiple first power switches 200 include a first switch 210, a second switch 220, a third switch 230, and a fourth switch 240 connected in series in sequence. One end of the first switch 210 away from the second switch 220 is used to connect the positive pole of the AC power supply, and one end of the fourth switch 240 away from the third switch 230 is used to connect the negative pole of the AC power supply; between the second switch 220 and the third switch 230 is used to connect the DC power supply; the multiple second power switches 300 include a fifth switch 310 and a sixth switch 320. One end of the fifth switch 310 is connected between the first switch 210 and the second switch 220, and one end of the sixth switch 320 is connected between the third switch 230 and the fourth switch 240.

[0051] It should be noted that the three-level power structure of this embodiment can be used as an active neutral point clamped three-level power structure (ANPC). The first switch 210, the second switch 220, the third switch 230, and the fourth switch 240 in this embodiment can be high-frequency SiC chips, and the fifth switch 310 and the sixth switch 320 are low-frequency chips.

[0052] In some embodiments of the present application, the other end of the fifth switching tube 310 in this embodiment is grounded, and the other end of the sixth switching tube 320 is grounded. In another embodiment, the other end of the fifth switching tube 310 may also be connected to a first neutral voltage, and the other end of the sixth switching tube 320 may be connected to a second neutral voltage, where the first neutral voltage is different from the second neutral voltage.

[0053] In some embodiments of the present application, the first switching tube 210, the second switching tube 220, the third switching tube 230, the fourth switching tube 240, the fifth switching tube 310, and the sixth switching tube 320 in this embodiment are selected from MOS transistors, IGBT transistors, and triodes.

[0054] In some embodiments of the present application, please refer to Figure 3 , Figure 3 , which shows a schematic structural diagram of the three-level power structure provided in this embodiment; the three-level power structure of this embodiment includes a heat dissipation layer 130, a substrate layer 120, and a conductive layer 110 arranged in sequence. A plurality of first power switching tubes 200 and a plurality of second power switching tubes 300 are arranged on the conductive layer 110; wherein, the projections of the plurality of first power switching tubes 200 and the plurality of second power switching tubes 300 on the heat dissipation layer 130 fall on the heat dissipation layer 130.

[0055] It should be noted that the heat dissipated by the plurality of first power switching tubes 200 and the plurality of second power switching tubes 300 can be quickly dissipated through the heat dissipation layer 130 to ensure that the plurality of first power switching tubes 200 and the plurality of second power switching tubes 300 operate at an appropriate temperature.

[0056] In some embodiments of the present application, please refer to Figure 4 , Figure 4The structure diagram of the three-level power structure provided by this embodiment is shown; the conductive layer 110 of this embodiment includes a first conductive region 111, a second conductive region 112, a third conductive region 113, a fourth conductive region 114, and a fifth conductive region 115 that do not contact each other. A third switching tube 230 is provided on the first conductive region 111, a fourth switching tube 240 is provided on the second conductive region 112, a second switching tube 220 and a fifth switching tube 310 are provided on the third conductive region 113, a sixth switching tube 320 is provided on the fourth conductive region 114, and a first switching tube 210 is provided on the fifth conductive region 115; the pins of the first switching tube 210 extend to the third conductive region 113 and are electrically connected to the third conductive region 113; the pins of the second switching tube 220 extend to the first conductive region 111 and are electrically connected to the first conductive region 111. The pins of the third switching tube 230 extend to the second conductive region 112 and are electrically connected to the second conductive region 112; the pins of the fifth switching tube 310 extend to the fourth conductive region 114 and are electrically connected to the fourth conductive region 114; the pins of the sixth switching tube 320 extend to the third conductive region 113 and are electrically connected to the third conductive region 113.

[0057] It should be noted that there are intervals between the first conductive region 111, the second conductive region 112, the third conductive region 113, the fourth conductive region 114, and the fifth conductive region 115. The pins and the conductive regions can be connected by bonding wires, and the bonding wires can be aluminum wires, copper wires, aluminum tapes, copper tapes, etc.

[0058] In some embodiments, the number of pins is multiple.

[0059] In some embodiments, the substrate layer 120 and the heat dissipation layer 130 are connected by solder or silver paste.

[0060] In some embodiments, the substrate layer 120 is a ceramic substrate. The ceramic component in the DBC ceramic substrate includes Al 2 O 3 Or AlN; the ceramic component in the AMB ceramic substrate includes AMB Si 3 N 4 / AlN. The conductive layer 110 can be made of copper material or aluminum silicon carbide. The heat dissipation layer 130 can be a single integral copper bottom plate 100 or a heat dissipation bottom plate 100 with pins.

[0061] In some embodiments of the present application, the number of the first switching tubes 210 is at least two. At least two first switching tubes 210 are connected in parallel, and at least two first switching tubes 210 are arranged at intervals on the fifth conductive region 115; the number of the second switching tubes 220 is at least two. At least two second switching tubes 220 are connected in parallel, and at least two second switching tubes 220 are arranged at intervals on the third conductive region 113; the number of the third switching tubes 230 is at least two. At least two third switching tubes 230 are connected in parallel, and at least two third switching tubes 230 are arranged at intervals on the first conductive region 111; the number of the fourth switching tubes 240 is at least two. At least two fourth switching tubes 240 are connected in parallel, and at least two fourth switching tubes 240 are arranged at intervals on the third conductive region 113; the number of the fifth switching tubes 310 is at least two. At least two fifth switching tubes 310 are connected in parallel, and at least two fifth switching tubes 310 are arranged at intervals on the third conductive region 113.

[0062] It should be noted that arranging at least two first switching tubes 210 in parallel is beneficial to increasing the output current. The same applies to arranging at least two second switching tubes 220, at least two third switching tubes 230, at least two fourth switching tubes 240, and at least two fifth switching tubes 310, which is to increase their respective output currents.

[0063] Among them, the distance between at least two third switching tubes 230 is greater than the distance between at least two first switching tubes 210, the distance between two fourth switching tubes 240, the distance between two fifth switching tubes 310, and the distance between two sixth switching tubes 320; and / or, the distance between at least two second switching tubes 220 is greater than the distance between at least two first switching tubes 210, the distance between two fourth switching tubes 240, the distance between two fifth switching tubes 310, and the distance between two sixth switching tubes 320.

[0064] In some embodiments, the three-level power structure further includes a pin 400. The function of the pin is to lead out the voltage and current signals at the corresponding positions in the power module, and it can be an integrated copper pin, aluminum pin, or a split fish-mouth pin and copper cap combination pin.

[0065] Furthermore, in order to better implement the three-level power structure in any of the above embodiments, based on the above three-level power structure, the present application further provides a power converter, including the above three-level power structure.

[0066] The advantages of this application are as follows. Based on the ANPC topology structure, this application can enable the power module to achieve the optimal efficiency simultaneously under both inverter and rectifier working conditions. Moreover, the power module uses all-SiC chips, which results in lower power losses and higher response speeds of the power module. At the same time, it can reduce the junction temperature of the device, improve the junction temperature balance, and enhance the overall performance of the power module. In addition, since the power module uses all-SiC chips, it can achieve a voltage-current rating of 1200V / 200A within a relatively small package volume, featuring light weight and high power density.

[0067] In the above embodiments, the descriptions of the respective embodiments have their own focuses. For parts not detailed or recorded in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0068] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only an example and does not constitute a limitation to this application. Although not explicitly stated here, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are proposed in this application, so such modifications, improvements, and corrections still fall within the spirit and scope of the exemplary embodiments of this application.

[0069] Meanwhile, specific terms are used in this application to describe the embodiments of this application. Such as "one embodiment", "an embodiment", and / or "some embodiments" mean a certain feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that the "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more at different positions in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application can be appropriately combined.

[0070] Similarly, it should be noted that, in order to simplify the expression of this application disclosure and thus help the understanding of one or more utility model embodiments, in the previous description of the embodiments of this application, sometimes multiple features are merged into one embodiment, drawing, or its description. However, this disclosure method does not mean that the features required by the object of this application are more than those mentioned in the claims. In fact, the features of the embodiment are fewer than all the features of the single embodiment disclosed above.

[0071] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A three-level power structure, characterized in that: The three-level power structure includes: A plurality of first power switch tubes; A plurality of second power switch tubes, wherein the switching frequency of the second power switch tubes is lower than the switching frequency of the first power switch tubes; A base plate, a plurality of the first power switch tubes are arranged at intervals on the base plate, a plurality of the second power switch tubes are arranged at intervals on the base plate, and a distance between two adjacent first power switch tubes is greater than a distance between two adjacent second power switch tubes.

2. The three-level power structure according to claim 1, characterized in that: The distance between adjacent first power switch tubes and second power switch tubes is greater than the distance between two adjacent second power switch tubes.

3. The three-level power structure according to claim 2, characterized in that: The distance between adjacent first power switch tubes and second power switch tubes is smaller than the distance between two adjacent first power switch tubes.

4. The three-level power structure according to any one of claims 1 to 3, characterized in that: The three-level power structure is used to connect an AC power supply and a DC power supply. The plurality of first power switch tubes include a first switch tube, a second switch tube, a third switch tube and a fourth switch tube connected in series in sequence. An end of the first switch tube away from the second switch tube is used to connect the positive electrode of the AC power supply. An end of the fourth switch tube away from the third switch tube is used to connect the negative electrode of the AC power supply. The DC power supply is connected between the second switch tube and the third switch tube. The plurality of second power switch tubes include a fifth switch tube and a sixth switch tube, one end of the fifth switch tube is connected between the first switch tube and the second switch tube, and one end of the sixth switch tube is connected between the third switch tube and the fourth switch tube.

5. The three-level power structure according to claim 4, characterized in that: The other end of the fifth switch tube is grounded, and the other end of the sixth switch tube is grounded.

6. The three-level power structure according to claim 4, characterized in that: The first switch tube, the second switch tube, the third switch tube, the fourth switch tube, the fifth switch tube and the sixth switch tube are selected from MOS tubes, IGBT tubes and triodes.

7. The three-level power structure according to claim 4, characterized in that: The three-level power structure includes a heat dissipation layer, a substrate layer and a conductive layer arranged in sequence, and a plurality of the first power switch tubes and a plurality of the second power switch tubes are arranged on the conductive layer; wherein the projections of the plurality of the first power switch tubes and the plurality of the second power switch tubes on the heat dissipation layer fall on the heat dissipation layer.

8. The three-level power structure according to claim 7, characterized in that: The conductive layer includes a first conductive region, a second conductive region, a third conductive region, a fourth conductive region and a fifth conductive region which are not in contact with each other, the third switch tube is arranged on the first conductive region, the fourth switch tube is arranged on the second conductive region, the second switch tube and the fifth switch tube are arranged on the third conductive region, the sixth switch tube is arranged on the fourth conductive region, and the first switch tube is arranged on the fifth conductive region; The pin of the first switch tube extends to the third conductive region and is electrically connected to the third conductive region; The pin of the second switch tube extends to the first conductive area and is electrically connected to the first conductive area; The pin of the third switch tube extends to the second conductive area and is electrically connected to the second conductive area; The pin of the fifth switch tube extends to the fourth conductive region and is electrically connected to the fourth conductive region; The pin of the sixth switch tube extends to the third conductive region and is electrically connected to the third conductive region.

9. The three-level power structure according to claim 8, characterized in that: The number of the first switch tubes is at least two, at least two of the first switch tubes are connected in parallel, and at least two of the first switch tubes are arranged at intervals on the fifth conductive region; The number of the second switch tubes is at least two, at least two of the second switch tubes are connected in parallel, and at least two of the second switch tubes are arranged at intervals on the third conductive region; The number of the third switch tubes is at least two, at least two of the third switch tubes are connected in parallel, and at least two of the third switch tubes are arranged at intervals on the first conductive region; The number of the fourth switch tubes is at least two, at least two of the fourth switch tubes are connected in parallel, and at least two of the fourth switch tubes are arranged at intervals on the third conductive region; The number of the fifth switch tubes is at least two, at least two of the fifth switch tubes are connected in parallel, and at least two of the fifth switch tubes are arranged at intervals on the third conductive region; Wherein, the distance between at least two of the third switch tubes is greater than the distance between at least two of the first switch tubes, the distance between two of the fourth switch tubes, the distance between two of the fifth switch tubes, and the distance between two of the sixth switch tubes; And / or, the distance between at least two of the second switch tubes is greater than the distance between at least two of the first switch tubes, the distance between two of the fourth switch tubes, the distance between two of the fifth switch tubes, and the distance between two of the sixth switch tubes.

10. A power converter, characterized in that: The invention comprises the three-level power structure as claimed in any one of claims 1 to 9.

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