Perovskite cell, perovskite laminated cell and photovoltaic device
By depositing a nanomodified layer on the surface of the conductive substrate, the energy loss and interface problems at the buried interface of the perovskite film in the perovskite solar cell are solved, and the photoelectric conversion efficiency of the perovskite battery is improved and the battery performance optimization is optimized.
Patent Information
- Application Number
- CN202421475359.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-26
- Publication Date
- 2025-05-27
- Estimated Expiration
- 2034-06-26
AI Technical Summary
The photoelectric conversion efficiency of large-area perovskite solar cells is mainly due to the energy loss and interface problems at the buried interface of the perovskite film, resulting in a drop in the open circuit voltage and low charge transfer efficiency.
By depositing a nanomodified layer on the surface of the conductive substrate, filling the grooves on the surface of the conductive substrate, reducing the roughness of the surface on one side of the perovskite absorption layer, flattening is achieved, and the coverage of the transport layer is increased to form a dense perovskite absorption layer.
It effectively improves the photoelectric conversion efficiency of perovskite batteries, reduces the holes and microcracks of the perovskite absorption layer, and improves the open circuit voltage and filling factor of the battery.
Smart Images
Figure CN222916546U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the field of solar cells and relates to a perovskite cell, a perovskite stacked cell and a photovoltaic device. Background Art
[0002] As the area of perovskite cell devices increases, the photoelectric conversion efficiency decreases significantly, which is mainly reflected in the open circuit voltage and filling factor, hindering the further industrialization of trans-structured perovskite cells. The energy loss and interface problems at the buried interface of the perovskite film are important reasons. On the one hand, compared with the top surface of the perovskite film, the buried interface has a higher deep trap state density, resulting in unfavorable non-radiative recombination losses. In addition, the energy mismatch between the substrate and the perovskite will also cause low charge transfer efficiency and unfavorable accumulation of electrons, resulting in energy loss and decreased open circuit voltage. On the other hand, due to the downward growth of perovskite, the evaporation of dimethyl sulfoxide solvent, and the hydrophobicity of the substrate, a large number of irregular holes and microcracks are formed at the buried interface, which become the recombination center of carriers and accelerate the degradation of the device. At present, the highest photoelectric conversion efficiency of flexible batteries is only 24.08%.
[0003] Therefore, the preparation of large-area perovskite solar cells requires clever substrate design to optimize the buried interface to achieve full coverage, low defect density, matched energy levels, and uniform formation of perovskite films. Utility Model Content
[0004] In view of the shortcomings of the prior art, the purpose of the utility model is to provide a perovskite cell, a perovskite stack cell and a photovoltaic device, which improve the flatness of the cell substrate surface, reduce the roughness of the surface of the cell substrate on the side in contact with the perovskite, effectively increase the coverage of the transmission layer, and obtain a dense and uniform perovskite absorption layer.
[0005] To achieve this purpose, the utility model adopts the following technical solutions:
[0006] In a first aspect, the utility model provides a perovskite battery, comprising a conductive substrate, a nano-modified layer, a first transmission layer, a perovskite absorption layer, a second transmission layer and an electrode layer stacked in sequence, wherein the surface roughness of the nano-modified layer close to the conductive substrate is greater than the surface roughness of the nano-modified layer close to the perovskite absorption layer.
[0007] The utility model deposits a nano-modified layer on the surface of the conductive substrate to fill the grooves on the surface of the conductive substrate, which not only reduces the roughness of the surface close to the perovskite absorption layer and achieves flattening, so that the surface of the perovskite absorption layer has no holes and is evenly distributed, but also effectively increases the coverage of the transmission layer to form a denser surface monolayer.
[0008] As a preferred technical solution of the present invention, the surface roughness of the nano-modified layer close to the conductive substrate is 20 to 40 nm, for example, it can be 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, 31 nm, 32 nm, 33 nm, 34 nm, 35 nm, 36 nm, 37 nm, 38 nm, 39 nm or 40 nm, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.
[0009] The surface roughness of the nano-modified layer on the side close to the perovskite absorption layer is 10-15 nm, for example, 10 nm, 12 nm, 13 nm, 14 nm or 15 nm, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.
[0010] As a preferred technical solution of the present invention, the thickness of the conductive substrate is 100-150 μm, for example, it can be 100 μm, 105 μm, 110 μm, 115 μm, 120 μm, 125 μm, 130 μm, 135 μm, 140 μm, 145 μm or 150 μm, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.
[0011] The thickness of the nano-modified layer is 30 to 50 nm, for example, it can be 30 nm, 31 nm, 32 nm, 33 nm, 34 nm, 35 nm, 36 nm, 37 nm, 38 nm, 39 nm, 40 nm, 41 nm, 42 nm, 43 nm, 44 nm, 45 nm, 46 nm, 47 nm, 48 nm, 49 nm or 50 nm, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.
[0012] As a preferred technical solution of the utility model, the nano-modified layer is an oxide nano-particle layer.
[0013] The shapes of the nanoparticles in the oxide nanoparticle layer include sphere, block or wire.
[0014] The particle size or length of the nanoparticles is 15 to 30 nm, for example, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 22 nm, 24 nm, 25 nm, 26 nm, 28 nm or 30 nm, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.
[0015] As a preferred technical solution of the utility model, the nano-modified layer includes one or more of a silicon oxide nano-particle layer, an aluminum oxide nano-particle layer, a zinc oxide nano-particle layer or an indium tin oxide nano-particle layer.
[0016] The nano-modified layer in the present invention includes the above-mentioned nano-particle layer, has high thermal stability and high transmittance, can effectively improve the flatness of the conductive substrate, and realize the flattening of the conductive substrate. It should be noted that the silicon oxide nano-particle layer, aluminum oxide nano-particle layer, zinc oxide nano-particle layer and indium tin oxide nano-particle layer in the present invention are all material layers known to those skilled in the art.
[0017] As a preferred technical solution of the utility model, the conductive base comprises a substrate and a conductive layer which are stacked, the conductive layer is connected to the nano-modified layer, and the first transport layer is a self-assembled carrier transport layer.
[0018] As a preferred technical solution of the present invention, a barrier layer is further provided between the second transmission layer and the electrode layer.
[0019] The utility model can protect the perovskite absorption layer by setting the barrier layer, and can also prevent the carriers of the second transmission layer from moving to the electrode layer side.
[0020] As a preferred technical solution of the utility model, the substrate is a transparent flexible substrate.
[0021] The substrate includes but is not limited to PET (polyethylene terephthalate) or PEN (polyethylene naphthalate diformicacid glycol ester), and the conductive layer includes but is not limited to ITO (indium tin oxide) or FTO (fluorine-doped tin oxide). The nano-modified layer can fill the pores or grooves in the conductive layer, effectively improving the flatness of the conductive substrate. It should be noted that the materials of the above-mentioned conductive substrate and the conductive layer are all known products common to those skilled in the art.
[0022] The self-assembled carrier transport layer (non-biological self-assembled system, SAM) in the utility model has an easily modifiable molecular structure, which helps to fit the surface characteristics of the conductive substrate, and has less consumption and parasitic absorption, and can be used as a carrier transport material in a trans-structured perovskite battery. In addition, the self-assembled carrier transport layer can be dissolved in environmentally friendly solvents such as ethanol, reducing biological toxicity. Commonly used self-assembled carrier transport layers are based on carbazole units, including but not limited to MeO-2PACz and Me-4PACz. Because carbazole is rich in electrons, the self-assembled carrier transport layer has excellent hole transport capacity.
[0023] The second transport layer is C 60 Transport layer.
[0024] The electrode layer is a silver electrode layer.
[0025] The barrier layer is a BCP barrier layer.
[0026] Furthermore, in the present invention, the thickness of the first transmission layer is 4 to 8 nm, for example, 4 nm, 5 nm, 6 nm, 7 nm or 8 nm, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.
[0027] The thickness of the second transmission layer is 20 to 30 nm, for example, it can be 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm or 30 nm, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.
[0028] The thickness of the electrode layer is 80 to 130 nm, for example, it can be 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 105 nm, 110 nm, 115 nm, 120 nm, 125 nm or 130 nm, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.
[0029] The thickness of the blocking layer is 5 to 12 nm, for example, it can be 5 nm, 5.5 nm, 6 nm, 6.5 nm, 7 nm, 7.5 nm, 8 nm, 8.5 nm, 9 nm, 9.5 nm, 10 nm, 10.5 nm, 11 nm, 11.5 nm or 12 nm, but is not limited to the listed values, and other unlisted values within the numerical range are also applicable.
[0030] In a second aspect, the utility model provides a perovskite stack cell, wherein the perovskite stack cell comprises a top cell and a bottom cell, wherein the top cell comprises the perovskite cell described in the first aspect, and the bottom cell comprises a crystalline silicon solar cell or a thin film solar cell, wherein the top cell has a relative front and back surface, wherein the front surface is a light-receiving surface, and the bottom cell is located on the back surface of the top cell, and the top cell and the bottom cell are connected in series.
[0031] In a third aspect, the utility model provides a photovoltaic device, wherein the photovoltaic device comprises the perovskite cell described in the first aspect.
[0032] The perovskite absorption layer of the photovoltaic device in the utility model has small interface energy loss, a flat, dense and uniform surface, and high photoelectric conversion efficiency.
[0033] The numerical range described in the present invention not only includes the point values listed above, but also includes any point values between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values included in the range.
[0034] Compared with the prior art, the beneficial effects of the utility model are:
[0035] The utility model provides a perovskite cell, a perovskite stacked cell and a photovoltaic device, which deposit a nano-modified layer on the surface of a conductive substrate to fill the grooves of the conductive substrate, thereby not only reducing the roughness of the surface close to the perovskite absorption layer and achieving flattening, so that the surface of the perovskite absorption layer is free of holes and evenly distributed, but also effectively increasing the coverage of the transmission layer to form a denser surface monolayer. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] Figure 1 This is a schematic structural diagram of the perovskite battery provided in Example 1 of the utility model.
[0037] Among them, 1-substrate; 2-conductive layer; 3-nano-modified layer; 4-first transmission layer; 5-perovskite absorption layer; 6-second transmission layer; 7-electrode layer; 8-barrier layer. DETAILED DESCRIPTION
[0038] It should be understood that, in the description of the present utility model, the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "back", "top", "bottom", "inside", "outside", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present utility model, unless otherwise specified, "multiple" means two or more.
[0039] It should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "disposed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.
[0040] The technical solution of the utility model is further explained below with reference to the accompanying drawings and through specific implementation methods.
[0041] In a specific embodiment, the utility model provides a perovskite battery, comprising a conductive substrate, a nano-modified layer, a first transmission layer, a perovskite absorption layer, a second transmission layer and an electrode layer stacked in sequence, wherein the surface roughness of the nano-modified layer close to the conductive substrate is greater than the surface roughness of the nano-modified layer close to the perovskite absorption layer.
[0042] Specifically, the surface roughness of the nano-modified layer on the side close to the conductive substrate is 20-40 nm, and the surface roughness of the nano-modified layer on the side close to the perovskite absorption layer is 10-15 nm.
[0043] In some embodiments, the thickness of the conductive substrate is 100-150 μm, and the thickness of the nano-modified layer is 30-50 nm.
[0044] In some embodiments, the nano-modified layer is an oxide nanoparticle layer.
[0045] Specifically, the shapes of the nanoparticles in the oxide nanoparticle layer include spherical, block or linear, and the particle size or length of the nanoparticles is 15 to 30 nm.
[0046] Preferably, the nano-modified layer includes one of a silicon oxide nanoparticle layer, an aluminum oxide nanoparticle layer, a zinc oxide nanoparticle layer or an indium tin oxide nanoparticle layer.
[0047] In some embodiments, the conductive substrate comprises a substrate and a conductive layer arranged in a stacked manner, and the conductive layer is connected to the nano-modified layer. The substrate is a transparent flexible substrate. Specifically, the substrate includes but is not limited to PET or PEN, and the conductive layer includes but is not limited to ITO or FTO. The nano-modified layer can fill the pores or grooves in the conductive layer, effectively improving the flatness of the conductive substrate.
[0048] In some embodiments, the first transport layer is a self-assembled carrier transport layer, and specifically, the thickness of the first transport layer is 4 to 8 nm. The self-assembled carrier transport layer has an easily modifiable molecular structure, which helps to fit the surface characteristics of the conductive substrate, and has less consumption and parasitic absorption, and can be used as a carrier transport material in a trans-structured perovskite battery. In addition, the self-assembled carrier transport layer can be dissolved in environmentally friendly solvents such as ethanol to reduce biological toxicity. Commonly used self-assembled carrier transport layers are based on carbazole units, including but not limited to MeO-2PACz and Me-4PACz. Because carbazole is rich in electrons, the self-assembled carrier transport layer has excellent hole transport capacity.
[0049] In some embodiments, the second transmission layer is C 60 The transmission layer has a thickness of 20 to 30 nm.
[0050] In some embodiments, the electrode layer is a silver electrode layer, and the thickness of the electrode layer is 80 to 130 nm.
[0051] In some embodiments, a barrier layer is further disposed between the second transport layer and the electrode layer, and the thickness of the barrier layer is 5 to 12 nm. Specifically, the barrier layer is a BCP barrier layer.
[0052] In order to help those skilled in the art better understand the overall technical solution and working process of the utility model, the utility model exemplarily provides the following specific method for making a perovskite battery, which specifically includes the following steps:
[0053] (1) treating the conductive substrate with UV-ozone for 12 to 20 minutes, spin-coating the dispersion of nanoparticles on the surface of the conductive substrate, and performing annealing to form a nano-modified layer;
[0054] The rotation speed of the spin coating is 3000-6000 rpm, and the time of the spin coating is 20-45 seconds; the temperature of the annealing treatment is 90-120° C., and the time of the annealing treatment is 8-15 minutes; the nanoparticles are silicon oxide nanoparticles or aluminum oxide nanoparticles, the dispersion includes but is not limited to water dispersion or alcohol dispersion, and the mass fraction of the nanoparticles in the dispersion is 10-50%;
[0055] (2) Spin-coating a MeO-2PACz raw material solution having an isopropanol concentration of 0.3 mg / mL on the surface of the nano-modified layer and performing an annealing treatment to form a first transport layer;
[0056] The rotation speed of the spin coating is 3000-6000 rpm, and the time of the spin coating is 20-45 s; the temperature of the annealing treatment is 90-120° C., and the time of the annealing treatment is 8-15 min;
[0057] (3) performing a first spin coating and a second spin coating of a perovskite precursor solution on the surface of the first transport layer, followed by an annealing treatment to obtain a perovskite absorption layer;
[0058] The first spin coating has a rotation speed of 500 to 1500 rpm and a time of 10 to 20 s, the second spin coating has a rotation speed of 4000 to 6000 rpm and a time of 30 to 60 s, and within 15 to 25 s before the second spin coating is completed, 450 μL of ether is dripped for surface treatment; the annealing treatment is performed on a hot plate at 90 to 120° C. and the annealing treatment time is 25 to 45 min;
[0059] (4) A C60 transport layer, a BCP barrier layer and a silver electrode layer are sequentially deposited on the surface of the perovskite absorption layer through a thermal evaporation process.
[0060] It should be noted that all the above materials are commonly known materials to those skilled in the art, and the thermal evaporation process adopts conventional processing technology in the art. The present invention does not specifically limit the operation steps and process parameters.
[0061] In another specific embodiment, the utility model provides a perovskite stack cell, which includes a top cell and a bottom cell, wherein the top cell includes the perovskite cell described in a specific embodiment, and the bottom cell includes a crystalline silicon solar cell or a thin film solar cell, the top cell has a relative front and back side, the front side is a light receiving side, the bottom cell is located on the back side of the top cell, and the top cell and the bottom cell are connected in series.
[0062] In another specific embodiment, the utility model provides a photovoltaic device, the photovoltaic device comprising a perovskite cell according to a specific embodiment. The perovskite absorption layer of the photovoltaic device in the utility model has low interface energy loss, a flat, dense and uniform surface, and high photoelectric conversion efficiency.
[0063] Example 1
[0064] This embodiment provides a perovskite battery, such as Figure 1 As shown, it includes a conductive substrate, a nano-modified layer 3, a first transmission layer 4, a perovskite absorption layer 5, a second transmission layer 6, a BCP barrier layer 8 and a silver electrode layer 7 which are stacked in sequence. The conductive substrate includes a PET substrate 1, and an ITO conductive layer 2 deposited on the surface of the PEN substrate 1 close to the nano-modified layer 3, and the thickness of the conductive substrate is 120 μm. The nano-modified layer 3 is an aluminum oxide nanoparticle layer with a thickness of 40 nm, and the surface roughness of the nano-modified layer 3 close to the ITO conductive layer 2 is 25 nm, and the surface roughness of the nano-modified layer 3 close to the perovskite absorption layer 5 is 12 nm. The first transmission layer 4 is a MeO-2PACz self-assembled monomolecular hole transmission layer with a thickness of 6 nm, and the second transmission layer 6 is a C with a thickness of 25 nm. 60 The electron transport layer 8 has a thickness of 8 nm. The silver electrode layer 7 has a thickness of 100 nm.
[0065] The perovskite battery in this embodiment is prepared by the following steps:
[0066] (1) treating the conductive substrate with UV-ozone for 15 minutes, spin-coating a dispersion of aluminum oxide nanoparticles with a particle size of 20 nm on the surface of the conductive substrate, and performing annealing to form a nano-modified layer 3;
[0067] The rotation speed of the spin coating is 5000 rpm and the time is 30 seconds; the temperature of the annealing treatment is 100°C and the time is 10 minutes; the dispersion liquid used is an aqueous dispersion liquid, and the mass fraction of the aluminum oxide nanoparticles in the dispersion liquid is 20%;
[0068] (2) Spin-coating a MeO-2PACz raw material solution having an isopropanol concentration of 0.3 mg / mL on the surface of the nano-modified layer 3, and performing an annealing treatment to form a first transport layer 4;
[0069] The rotation speed of the spin coating is 4000 rpm and the time is 30 s; the temperature of the annealing treatment is 100° C. and the time is 10 min;
[0070] (3) on the surface of the first transport layer 4, a perovskite precursor solution is sequentially spin-coated once and twice, followed by annealing to obtain a perovskite absorption layer 5;
[0071] The first spin coating was performed at a speed of 1000 rpm for 10 s; the second spin coating was performed at a speed of 5000 rpm for 40 s; within 20 s before the second spin coating, 450 μL of ether was dripped for surface treatment; the annealing treatment was performed on a hot plate at 100° C. for 30 min;
[0072] (4) A C60 transport layer, a BCP barrier layer 8 and a silver electrode layer 7 are sequentially deposited on the surface of the perovskite absorption layer 5 by a thermal evaporation process. The thermal evaporation process adopts a conventional processing process in the art, and the present invention does not specifically limit the operating steps and process parameters of the thermal evaporation process.
[0073] Example 2
[0074] This embodiment provides a perovskite battery, which is different from Embodiment 1 in that the nano-modification layer adopts a silicon oxide nanoparticle layer, and the rest of the structure, preparation method, preparation materials and process parameters are the same as those of Embodiment 1.
[0075] Comparative Example 1
[0076] This comparative example provides a perovskite battery, which is different from Example 1 in that no nano-modification layer is provided, and the rest of the structure, preparation method, preparation materials and process parameters are the same as those of Example 1.
[0077] In the present invention, photoelectric tests were performed on the perovskite cells obtained in Examples 1 to 2 and Comparative Example 1, and the results are shown in Table 1.
[0078] Among them, the photoelectric test conditions are: AM1.5, 1000W / m 2 , 25±2℃.
[0079] Table 1
[0080]
[0081] It is not difficult to see from Table 1 that, compared with Comparative Example 1, in Examples 1 and 2, by providing a nanoparticle layer on a conductive substrate, the photoelectric conversion efficiency of the battery can be enhanced, and the open circuit voltage and fill factor of the battery can be improved, thereby improving the overall performance of the battery.
[0082] The applicant declares that the above is only a specific implementation method of the present utility model, but the protection scope of the present utility model is not limited thereto. The technicians in the relevant technical field should understand that any changes or substitutions that can be easily thought of by the technicians in the relevant technical field within the technical scope disclosed in the present utility model fall within the protection scope and disclosure scope of the present utility model.
Claims
1. A perovskite battery, characterized in that: The invention comprises a conductive substrate, a nano-modified layer, a first transmission layer, a perovskite absorption layer, a second transmission layer and an electrode layer which are stacked in sequence, wherein the surface roughness of the nano-modified layer close to the conductive substrate is greater than the surface roughness of the nano-modified layer close to the perovskite absorption layer.
2. The perovskite battery according to claim 1, characterized in that: The surface roughness of the nano-modified layer close to the conductive substrate is 20-40 nm; The surface roughness of the nano-modified layer on a side close to the perovskite absorption layer is 10-15 nm.
3. The perovskite battery according to claim 1 or 2, characterized in that: The thickness of the conductive substrate is 100 to 150 μm; The thickness of the nano-modified layer is 30-50 nm.
4. The perovskite battery according to claim 3, characterized in that: The nano-modified layer is an oxide nano-particle layer; The shapes of the nanoparticles in the oxide nanoparticle layer include spherical, block or linear; The particle size or length of the nanoparticles is 15 to 30 nm.
5. The perovskite battery according to claim 4, characterized in that: The nano-modified layer includes one of a silicon oxide nano-particle layer, an aluminum oxide nano-particle layer, a zinc oxide nano-particle layer or an indium tin oxide nano-particle layer.
6. The perovskite battery according to claim 1, characterized in that: The conductive base comprises a substrate and a conductive layer which are stacked, the conductive layer is connected to the nano-modified layer, and the first transport layer is a self-assembled carrier transport layer.
7. The perovskite cell according to claim 6, characterized in that: A barrier layer is further arranged between the second transport layer and the electrode layer.
8. The perovskite cell according to claim 7, characterized in that: The substrate is a transparent flexible substrate; The second transport layer is C 60 Transport layer; The electrode layer is a silver electrode layer; The barrier layer is a BCP barrier layer.
9. A perovskite tandem battery, characterized in that: The perovskite stack cell comprises a top cell and a bottom cell, wherein the top cell comprises the perovskite cell according to any one of claims 1 to 8, and the bottom cell comprises a crystalline silicon solar cell or a thin film solar cell, wherein the top cell has a relative front and back surface, wherein the front surface is a light-receiving surface, and the bottom cell is located on the back surface of the top cell, and the top cell and the bottom cell are connected in series.
10. A photovoltaic device, characterized in that: The photovoltaic device comprises the perovskite cell according to any one of claims 1 to 8.