Gas mixing device applied to chemical vapor deposition and thin film deposition equipment thereof

Abstract

The utility model discloses a gas mixing device applied to chemical vapor deposition, which comprises a gas mixing body with a gas outlet surface, and the gas mixing body is provided with at least one group of gas mixing paths and clean gas paths; the mixed gas path comprises a main gas inlet path and at least two branch gas paths communicated with an outlet of the main gas inlet path, outlets of the branch gas paths extend to the gas outlet surface, and an outlet of the clean gas path also extends to the gas outlet surface; and a non-return structure is also arranged on the gas-distributing gas path. According to the gas mixing device applied to chemical vapor deposition disclosed by the utility model, the length of a gas mixing path is prolonged, so that process gas has a longer mixing space, the gas mixing is more uniform, and clean gas can be prevented from flowing backwards from the gas mixing path and polluting the process gas path. The utility model further discloses thin film deposition equipment adopting the gas mixing device, the process gas is mixed more uniformly, and the thin film deposition quality is higher.

Description

Technical Field

[0001] The utility model relates to the technical field of thin film deposition equipment, in particular to a gas mixing device applied to chemical vapor deposition and a thin film deposition equipment thereof. Background Art

[0002] With the continuous development of the semiconductor process, the requirements for the number, size and stability of the particles of the thin film deposited by the PECVD (plasma enhanced chemical vapor deposition) equipment are becoming increasingly strict, and many particles come from the direct mixing of reactive gases in the pipeline. At the same time, in order to ensure the uniformity of the thin film deposited by the PECVD equipment, the gas mixing effect of the reaction gas needs to be strengthened. If the gas mixing is not sufficient, the uniformity of the deposited thin film will also be reduced, which will lead to the overall thin film quality not meeting the requirements.

[0003] The gas sources that are easily reactive in the normal temperature environment cannot be directly mixed in the pipeline. There is a long-term risk of PA r i sk (the risk that the number of particles exceeds the customer's standard requirements), and they need to be mixed in the gas mixing device. For example, TEOS (tetraethoxysilane) and O 3 (ozone), B 2 H 6 (diborane) and NH 3 (ammonia), etc. However, the gas mixing path in the gas mixing device is often short, and the gas mixing is not sufficient, resulting in uneven film formation quality, and problems such as eccentricity of RI (refractive index), EC (extinction coefficient), and B% (boron concentration). The clean gas path gas in the existing gas mixing device is prone to backflow into the process gas pipeline, polluting the process gas pipeline. Content of the Utility Model

[0004] The purpose of the utility model is to overcome the deficiencies of the prior art and provide a gas mixing device applied to chemical vapor deposition and a thin film deposition equipment thereof, so as to solve the technical problems of short gas mixing path, uneven gas mixing and easy backflow of clean gas into the process gas path in the existing gas mixing device.

[0005] To achieve the above purpose, the utility model adopts the following technical solutions:

[0006] In the first aspect, an embodiment of the utility model provides a gas mixing device applied to chemical vapor deposition, which includes a gas mixing body with an air outlet surface, and at least one group of gas mixing gas paths and a clean gas path are arranged on the gas mixing body;

[0007] The gas mixing gas path includes: a main intake gas path, at least two branch gas paths communicated with the outlet of the main intake gas path, the outlet of the branch gas path extends to the air outlet surface, and the outlet of the clean gas path also extends to the air outlet surface;

[0008] Wherein, a check structure is further arranged on the branch gas path.

[0009] Among them, the gas mixing gas path is arranged around the clean gas path.

[0010] Among them, the check structure is a Tesla valve structure.

[0011] Among them, the outlets of the gas distribution gas path are annularly distributed along the gas outlet surface.

[0012] Among them, at least two annular grooves and a cover plate covering the annular grooves are further provided on the gas outlet surface, the outlet of the gas distribution gas path extends to the groove wall of the annular groove, and a plurality of gas mixing outlets communicating with the annular groove are provided on the cover plate.

[0013] Among them, a plurality of upper baffle plates and lower baffle plates extending towards each other are further provided on the cavity wall of the gas distribution gas path, the upper baffle plates and the lower baffle plates are alternately distributed in sequence, and at least a part of the front ends of the upper baffle plates and the lower baffle plates overlap.

[0014] Among them, at least two annular grooves and a cover plate covering the annular grooves are further provided on the gas outlet surface, the outlet of the gas distribution gas path extends to the groove wall of the annular groove, and a plurality of gas mixing outlets communicating with the annular groove are provided on the cover plate.

[0015] Among them, the gas mixing gas paths are circularly distributed with the clean gas path as the center, and the gas mixing gas paths are equidistantly distributed.

[0016] Among them, the gas mixing gas paths are circularly distributed with the clean gas path as the center, and at least two of the gas distribution gas paths in the same group of gas mixing gas paths are radially distributed along the circle.

[0017] In a second aspect, an embodiment of the present invention further provides a thin film deposition device, which includes the gas mixing device for chemical vapor deposition as described in any one of the above.

[0018] The gas mixing device for chemical vapor deposition of the present invention and its thin film deposition device design the gas mixing gas path as the main intake gas path and a plurality of gas distribution gas paths, and set a check valve structure on the gas distribution gas path, which extends the length of the gas mixing gas path, so that the process gas has a longer mixing space, making the gas mixing more uniform. And the clean gas path and the gas mixing gas path are independently arranged and combined with the check structure, which can prevent the clean gas from flowing back into the gas mixing gas path and polluting the process gas path. The thin film deposition device adopting this gas mixing device has more uniform mixing of process gases and higher thin film deposition quality.

[0019] The above description is only an overview of the technical solution of the present invention. In order to be able to understand the technical means of the present invention more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable, the following preferred embodiments are specifically described in detail as follows. Brief Description of the Drawings

[0020] Figure 1 It is a top - view structural schematic diagram of a gas - mixing device applied to chemical vapor deposition according to the first embodiment of the present utility model.

[0021] Figure 2 It is a longitudinal sectional view of a gas - mixing device applied to chemical vapor deposition according to the first embodiment of the present utility model.

[0022] Figure 3 It is a bottom - view structural schematic diagram of a gas - mixing device applied to chemical vapor deposition according to the first embodiment of the present utility model.

[0023] Figure 4 It is Figure 2 a schematic diagram of the enlarged structure of the local part A in

[0024] Figure 5 It is a top - view structural schematic diagram of a gas - mixing device applied to chemical vapor deposition according to the second embodiment of the present utility model.

[0025] Figure 6 It is a longitudinal sectional view of a gas - mixing device applied to chemical vapor deposition according to the second embodiment of the present utility model.

[0026] Figure 7 It is a bottom - view structural schematic diagram of a gas - mixing device applied to chemical vapor deposition according to the second embodiment of the present utility model.

[0027] Figure 8 Figure 6 a schematic diagram of the enlarged structure of the local part B in

[0028] Explanation of reference numerals:

[0029] Gas - mixing body 10, gas - mixing gas path 11, gas - mixing gas path 12, cleaning gas path 13, cover plate 14, main intake gas path 111, branch gas path 112, branch gas path 113, gas outlet surface 102, gas - mixing outlet 141, outlet 1121, outlet 1131, check structure 1120, check structure 1130, annular groove 101, annular groove 103;

[0030] Gas - mixing body 20, gas - mixing gas path 21, gas - mixing gas path 22, cleaning gas path 23, cover plate 24, main intake gas path 211, branch gas path 212, branch gas path 213, gas outlet surface 202, outlet 2121, outlet 2131, annular groove 201, annular groove 203, gas - mixing outlet 241, upper baffle 2122, lower baffle 2123. Detailed implementation manners

[0031] In order to make the purpose, technical solutions and advantages of the present utility model clearer and more understandable, the present utility model will be further described in detail below with reference to the accompanying drawings and specific implementation manners.

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present utility model with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model.

[0033] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "resin", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is the orientation or positional relationship based on the accompanying drawings. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present utility model.

[0034] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present utility model, "a plurality" means two or more, unless otherwise specifically defined.

[0035] In the present utility model, unless otherwise clearly defined and limited, the terms "installed", "connected", "connected to", "fixed", etc. should be understood in a broad sense. For example, it may be a connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0036] In the present utility model, unless otherwise clearly defined and limited, the first feature being "above" or "below" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through other features therebetween. Moreover, the first feature being "above", "over" and "on" the second feature includes that the first feature is directly above and obliquely above the second feature, or merely indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "under" the second feature includes that the first feature is directly below and obliquely below the second feature, or merely indicates that the horizontal height of the first feature is lower than that of the second feature.

[0037] In the description of this specification, the description referring to terms such as "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic expressions of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0038] With the continuous development of semiconductor manufacturing processes, in plasma-enhanced chemical vapor deposition equipment, the requirements for the number, size, and stability of deposited thin film particles are becoming increasingly strict. The gas-phase particles mostly come from the direct mixing of reactive gases in the pipeline. In order to improve the uniformity of thin film deposition, the requirement for the mixing uniformity of gas mixing is also very high.

[0039] Gas sources that are prone to reaction at normal temperature generally cannot be directly mixed in the pipeline and need to be mixed in a special gas mixing device. However, the gas mixing gas path of the existing gas mixing device is short, and the gas mixing is insufficient, resulting in uneven quality of the deposited thin film. At the same time, the cleaning gas is prone to backflow from the gas mixing pipeline, polluting the process gas pipeline. Based on the above defects, this embodiment proposes a gas mixing device for chemical vapor deposition and its thin film deposition equipment.

[0040] Embodiment 1:

[0041] Please refer to Figures 1 to 4 , this embodiment provides a gas mixing device for chemical vapor deposition, which includes a gas mixing body 10 having an air outlet surface 102. At least two gas mixing gas paths 11 and a cleaning gas path 13 are provided on the gas mixing body 10. In this embodiment, two gas mixing gas paths 11 and 12 are taken as an example for structural description. In other embodiments, the gas mixing gas path can also be set to three or more groups. The above gas mixing gas paths 11(12) are also the process gas paths for mixing process gases.

[0042] Taking the gas mixing gas path 11 as an example, the gas mixing gas path 11 includes: a main intake gas path 111, at least two branch gas paths 112 and 113 connected to the outlet of the main intake gas path 111. The outlet 1121 of the branch gas path 112 extends to the air outlet surface 102. Similarly, the outlet 1131 of the branch gas path 113 also extends to the air outlet surface 102. The outlet of the cleaning gas path 13 also extends to the air outlet surface 102. Two or more paths of process gases are fully mixed through at least two of the gas mixing gas paths 11(12) and then output from the same air outlet surface 102. The cavity space below the air outlet surface 102 is the space for chemical vapor deposition.

[0043] In this embodiment, the gas mixing body 10 has a disc structure, and the corresponding gas outlet surface 102 is a circular plane. The gas mixing gas path 11 in the gas mixing body 10 includes a main intake gas path 111 and at least two branch gas paths 112 and 113 connected thereto. The gas mixing gas path 11 is divided into two parts, and the extending directions of the branch gas paths 112 (113) are different from that of the main intake gas path 111. Therefore, the length of the gas mixing gas path can be relatively increased, providing a longer mixing channel for the process gas during output to enable sufficient mixing.

[0044] In this embodiment, the outlet of the main intake gas path 111 is divided into two parts to form two branch gas paths 112 and 113 connected thereto. In other embodiments, the outlet of the same main intake gas path 111 can also be divided into three or more branch gas paths, and the multiple branch gas paths further increase the length of the gas path. In order to make the process gas output more uniformly from the gas outlet surface 102, the outlets of two or more of the above-mentioned branch gas paths are evenly distributed, such as circular distribution at equal intervals, rhombus distribution or square distribution.

[0045] In this embodiment, the cleaning gas path 13 is relatively independently arranged in the gas mixing body 10 compared with the gas mixing gas path 11. In order to prevent the cleaning gas from flowing back into the gas mixing gas path 11 (12) in the reverse direction, check structures are also provided on the branch gas paths 112 and 113. Specifically, a check structure 1120 is provided on the branch gas path 112, and a check structure 1130 is provided on the branch gas path 113. The check structure 1120 and the check structure 1130 can not only prevent the cleaning gas from flowing back into the gas mixing gas path in the reverse direction, but also increase the length of the branch gas path 112 (113), further improving the mixing uniformity of the process gas.

[0046] Please refer to again Figure 1 , the gas mixing gas path 11 (12) is arranged around the cleaning gas path 13. When there are two sets of gas mixing gas paths 11 and 12 as shown in Figure 1 , the cleaning gas path 13 is arranged at the middle position between the gas mixing gas path 11 and the gas mixing gas path 12. When there are three or more sets of gas mixing gas paths, three or more sets of gas mixing gas paths are arranged around the cleaning gas path 13. The cleaning gas path 13 is used to introduce cleaning gases such as NF3 (nitrogen trifluoride) / AR (argon), and the cleaning gases do not need to be mixed. Therefore, the cleaning gas path 13 can be designed as a straight-through channel structure.

[0047] Please refer to again Figure 2 , in this embodiment, the check structure 1120 (1130) is a Tesla valve structure. In other embodiments, the check structure 1120 (1130) can also be a micro check valve, etc., which is used to prevent the air flow from flowing back into the gas mixing gas path 11 (12) in the reverse direction and avoid the process gas path being contaminated by the cleaning gas.

[0048] Among them, the outlets 1121 of the gas distribution channels 112 of at least two groups of the gas mixing channels 11(12) are annularly distributed along the gas outlet surface 102. Correspondingly, the outlets 1131 of the gas distribution channels 113 of at least two groups of the gas mixing channels 11(12) form another ring on the gas outlet surface 102. The rings formed by the outlets 1121 and 1131 both surround the cleaning gas channel 13. On the one hand, a relatively uniform gas outlet flow is formed on the gas outlet surface 102, enhancing the uniformity of thin film deposition, and each gas outlet flow surrounds the cleaning gas flow, facilitating the subsequent cleaning of the deposition space.

[0049] Specifically, the rings formed by the outlets 1121 and 1131 are circular rings.

[0050] Please refer to again Figure 4 As shown, at least two annular grooves 101 and 103 are further provided on the gas outlet surface 102, and a cover plate 14 covering the annular grooves 101(103). The outlets 1121(1131) of the gas distribution channels 112(113) all extend to the groove walls of the annular grooves 101(103), and a plurality of gas mixing outlets 141 communicating with the annular grooves 101(103) are provided on the cover plate 14.

[0051] The cover plate 14 can be an annular plate independent of the gas mixing body 10, or a cover plate part integrally formed with the gas mixing body 10. An annular groove 101 communicating with the outlet 1121 of the gas distribution channel 112 is opened on the gas outlet surface 102. Correspondingly, an annular groove 103 communicating with the outlet 1131 of the gas distribution channel 113 is further provided on the gas outlet surface 102, so that the process gas output from each gas distribution channel is mixed again in the annular groove 101 or 103, further improving the uniformity and consistency of its gas mixing. The number of annular grooves is the same as the number of gas distribution channels communicating with the same main intake gas channel 111. In this embodiment, the gas distribution channels 112 and 113 communicating with the main intake gas channel 111 are two, so the annular groove 101 and the annular groove 103 are correspondingly opened on the gas outlet surface 102.

[0052] More specifically, the gas mixing channels 11(12) are circularly distributed with the cleaning gas channel 13 as the center, and the gas mixing channels 11(12) are equally spaced. That is, the gas mixing channels 11(12) enclose a circular gas outlet group with the cleaning gas channel 13 as the center. Each gas distribution channel is centrosymmetric with the cleaning gas channel 13 as the center, so that the distribution of the mixed process gas outlets on the gas outlet surface 102 is relatively uniform.

[0053] Among them, the gas mixing channels 11(12) are circularly distributed with the cleaning gas channel 13 as the center, and at least two of the gas distribution channels 112 and 113 of the same group of the gas mixing channels 11 are distributed along the circular radius. As Figure 2As shown, the gas distribution gas paths 112 and 113 are opened at the outlet of the main intake gas path 111. Taking the cleaning gas path 13 as the center, they are distributed along the radial direction of the circle. Starting from Figure 2 As can be seen from the cross-sectional view shown, the gas distribution gas path 113 and the gas distribution gas path 112 are generally linearly distributed along the radius direction. Among them, the gas distribution gas path 113 is close to the cleaning gas path 13, and the gas distribution gas path 112 is far from the cleaning gas path 13.

[0054] As Figure 4 shown, the advantage of the gas distribution gas paths of the same group of gas mixing gas paths being distributed along the circular radial direction is that the outlets of the final gas distribution gas paths are radially distributed on the gas outlet surface 102, so that the output process gas is more evenly distributed in the deposition space, improving the thin film deposition quality.

[0055] Embodiment 2:

[0056] Please refer to Figures 5 to 8 again, which is a schematic structural diagram of a gas mixing device in another implementation manner. In this embodiment, the gas mixing device for chemical vapor deposition includes: a gas mixing body 20 having a gas outlet surface 202, and at least two groups of gas mixing gas paths 21 and a cleaning gas path 23 are provided on the gas mixing body 20; in this embodiment, taking two groups of gas mixing gas paths 21 and gas mixing gas paths 22 as an example for structural description, in other embodiments, the gas mixing gas paths can also be set to three groups or more. The gas mixing gas paths 21 and the gas mixing gas paths 22 are used for process gas mixing, that is, the process gas paths.

[0057] Taking the gas mixing gas path 21 as an example, the gas mixing gas path 21 includes: a main intake gas path 211, at least two gas distribution gas paths 212 and 213 connected to the outlet of the main intake gas path 211. The outlet 2121 of the gas distribution gas path 212 extends to the gas outlet surface 202. Similarly, the outlet 2131 of the gas distribution gas path 213 also extends to the gas outlet surface 202. The outlet of the cleaning gas path 23 also extends to the gas outlet surface 202; two or more paths of process gases are fully mixed through at least two of the gas mixing gas paths 21(22) and then output from the same gas outlet surface 202. The cavity space below the gas outlet surface 202 is the space for chemical vapor deposition.

[0058] In this embodiment, the gas mixing body 20 is a disc structure, and the corresponding gas outlet surface 202 is a circular plane. The gas mixing gas path 21 in the gas mixing body 20 includes a main intake gas path 211 and at least two gas distribution gas paths 212 and 213 connected to it, dividing the gas mixing gas path 21 into two. The extending directions of the gas distribution gas paths 212(213) are different from that of the main intake gas path 211. Therefore, the length of the gas mixing gas path can be relatively increased, providing a longer mixing channel for the process gas during the output process to make it fully mixed.

[0059] In this embodiment, the cleaning gas path 23 is relatively independently arranged in the gas mixing body 20 compared with the gas mixing gas path 21. To prevent the cleaning gas from flowing back into the gas mixing gas path 21 (22) in reverse, a check structure is also provided on the gas distribution gas paths 212 and 213. In this embodiment, the check structure can be a micro check valve or the like, which is used to prevent the air flow from flowing back in reverse from the gas mixing gas path 21 (22) and avoid polluting the process gas path. The micro check valve is arranged close to the outlet 2121 (2131).

[0060] To further increase the length of the gas distribution gas path in a smaller space, a plurality of upper baffle plates 2122 and lower baffle plates 2123 extending towards each other are also provided on the cavity wall of the gas distribution gas path 212 (213). The upper baffle plates 2122 and the lower baffle plates 2123 are distributed crosswise in sequence, and at least part of the front ends of the upper baffle plates 2122 and the lower baffle plates 2123 overlap. When the process mixed gas flows in the gas distribution gas path 212 or 213, the mixed gas flows in the wavy cavity formed by the intersection of the upper baffle plate 2122 and the lower baffle plate 2123, thereby further increasing the length of the gas mixing channel and making the gas mixing effect more uniform. In other embodiments, the gas flow channel structure formed by the upper baffle plate 2122 and the lower baffle plate 2123 can also be a maze structure of any other shape, which on the one hand increases the length of the gas mixing flow channel, and on the other hand can also change the air flow direction and speed, so that the mixing effect is better.

[0061] Among them, the outlets 2121 of the gas distribution gas paths 212 of at least two groups of the gas mixing gas paths 21 (22) are annularly distributed along the air outlet surface 202. Correspondingly, the outlets 2131 of the gas distribution gas paths 213 of at least two groups of the gas mixing gas paths 21 (22) form another ring on the air outlet surface 202. The rings formed by the air outlets 2121 and the air outlets 2131 both surround the cleaning gas path 23. On the one hand, a relatively uniform air outlet air flow is formed on the air outlet surface 202, enhancing the uniformity of thin film deposition, and each air outlet air flow surrounds the cleaning air flow, which is convenient for subsequent cleaning of the deposition space. Specifically, the rings formed by the outlets 2121 and the outlets 2131 are circular rings.

[0062] Please refer to again Figure 6 , at least two annular grooves 201 and 203 and a cover plate 24 covering the annular groove 201 (203) are also provided on the air outlet surface 202. The outlets 2121 (2131) of the gas distribution gas paths 212 (213) all extend to the groove walls of the annular groove 201 (203), and a plurality of gas mixing outlets 241 communicating with the annular groove 201 (203) are provided on the cover plate 24.

[0063] The cover plate 24 may be an annular plate independent of the gas mixing body 20, or a cover plate portion integrally formed with the gas mixing body 20. An annular groove 201 communicating with the outlet 2121 of the gas distribution gas path 212 is formed on the gas outlet surface 202. Correspondingly, an annular groove 203 communicating with the outlet 2131 of the gas distribution gas path 213 is also provided on the gas outlet surface 202, so that the process gas output from each gas distribution gas path is mixed again in the annular groove 201 or 203, further improving the uniformity and consistency of gas mixing.

[0064] More specifically, the gas mixing gas paths 21(22) are circularly distributed with the cleaning gas path 23 as the center, and the gas mixing gas paths 21(22) are equally spaced from each other. That is, the gas mixing gas paths 21(22) enclose a circular gas outlet surface with the cleaning gas path 23 as the center, and each gas distribution gas path forms a centrosymmetric structure with the cleaning gas path 23 as the center, so that the distribution of the mixed process gas outlets on the gas outlet surface 202 is relatively uniform.

[0065] Among them, the gas mixing gas paths 21(22) are circularly distributed with the cleaning gas path 23 as the center, and at least two of the gas distribution gas paths 212 and 213 in the same group of gas mixing gas paths 21 are distributed along the circular radius. As Figure 6 shown, the gas distribution gas path 212 and the gas distribution gas path 213 are opened at the outlet of the main intake gas path 211, with the cleaning gas path 23 as the center, and are distributed along the radius of the circle. From Figure 6 the cross-sectional view shown, the gas distribution gas path 213 and the gas distribution gas path 212 are generally linearly distributed along the radius direction. Among them, the gas distribution gas path 213 is close to the cleaning gas path 23, and the gas distribution gas path 212 is far from the cleaning gas path 23.

[0066] As Figure 8 shown, the advantage of the gas distribution gas paths in the same group of gas mixing gas paths being distributed along the circular radius is that the outlets of the final gas distribution gas paths are radially distributed on the gas outlet surface 202, so that the output process gas is more evenly distributed in the deposition space, improving the thin film deposition quality.

[0067] The gas mixing device applied to chemical vapor deposition in this embodiment extends the length of the gas mixing gas path by designing the gas mixing gas path as the main intake gas path and multiple gas distribution gas paths, and setting a check structure on the gas distribution gas path, so that the process gas has a longer mixing space, making the gas mixing more uniform. And by independently setting the cleaning gas path and the gas mixing gas path and combining the check structure, it can prevent the cleaning gas from flowing back from the gas mixing gas path and polluting the process gas path.

[0068] Embodiment 3:

[0069] This embodiment also provides a thin film deposition device, which includes the gas mixing device applied to chemical vapor deposition according to any one of the above Embodiment 1 or Embodiment 2.

[0070] The thin film deposition equipment adopting the gas mixing device applied to chemical vapor deposition has more uniform process gas mixing, higher thin film deposition quality, and can meet the more stringent requirements of more advanced semiconductor processes.

[0071] The above only further illustrates the technical content of the present invention with examples to make it easier for readers to understand, but it does not mean that the implementation modes of the present invention are limited to this. Any technical extension or re-creation based on the present invention is protected by the present invention. The protection scope of the present invention is subject to the claims.

Claims

1. A gas mixing device for chemical vapor deposition, characterized in that: It comprises a gas mixing body having a gas outlet surface, wherein the gas mixing body is provided with at least two groups of gas mixing gas paths and a cleaning gas path; The mixed gas path includes: a main intake gas path, at least two gas branch gas paths connected to the outlet of the main intake gas path, the outlet of the gas branch gas path extends to the gas outlet surface, and the outlet of the clean gas path also extends to the gas outlet surface; Wherein, a check structure is also provided on the gas distribution path.

2. The gas mixing device for chemical vapor deposition according to claim 1, characterized in that: The mixed gas path is arranged around the clean gas path.

3. The gas mixing device for chemical vapor deposition according to claim 2, characterized in that: The check structure is a Tesla valve structure.

4. The gas mixing device for chemical vapor deposition according to claim 2, characterized in that: The outlets of the gas separation path are distributed in a ring shape along the gas outlet surface.

5. The gas mixing device for chemical vapor deposition according to claim 4, characterized in that: The gas outlet surface is also provided with at least two annular grooves and a cover plate covering the annular grooves, the outlet of the gas separation path extends to the groove wall of the annular groove, and the cover plate is provided with a plurality of gas mixing outlets connected with the annular grooves.

6. The gas mixing device for chemical vapor deposition according to claim 2, characterized in that: A plurality of upper baffles and lower baffles extending toward each other are also provided on the cavity wall of the gas separation path. The upper baffles and the lower baffles are cross-distributed in sequence, and the front ends of the upper baffles and the lower baffles at least partially overlap.

7. The gas mixing device for chemical vapor deposition according to claim 6, characterized in that: The gas outlet surface is also provided with at least two annular grooves and a cover plate covering the annular grooves. The outlet of the gas separation path extends to the groove wall of the annular groove. The cover plate is provided with a plurality of gas mixing outlets connected with the annular grooves.

8. The gas mixing device for chemical vapor deposition according to any one of claims 1 to 7, characterized in that: The mixed gas paths are distributed in a circular shape with the clean gas path as the center, and the mixed gas paths are distributed at equal intervals.

9. The gas mixing device for chemical vapor deposition according to claim 8, characterized in that: At least two of the gas separation paths of the same group of the gas mixing paths are distributed along a circular radial direction.

10. A thin film deposition device, characterized in that: It comprises a gas mixing device for chemical vapor deposition as described in any one of claims 1 to 9.

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