Electroplating device

Abstract

The utility model provides an electroplating device and relates to the technical field of electroplating. The electroplating device comprises a base and an oscillation disc connected to one side of the base, a containing groove is concavely formed in the side, facing the oscillation disc, of the base and used for containing a wafer to be electroplated, a gap is formed between the oscillation disc and the base, electroplating liquid medicine can enter the space between the wafer to be electroplated and the oscillation disc from the gap, and a rotary oscillation mechanism is arranged on the face, facing the wafer to be electroplated, of the oscillation disc. The electroplating device can improve the electroplating defects and improve the electroplating uniformity.

Description

Technical Field

[0001] The utility model relates to the technical field of electroplating, and particularly to an electroplating device. Background Art

[0002] In the advanced packaging technology of wafers, the important process flow includes: coating → exposure → development → baking → electroplating → stripping → cleaning, that is, first a layer of photoresist is coated on the wafer, the photoresist undergoes a chemical reaction after exposure, and then the required fine patterns are transferred from the mask to the wafer through development. Finally, through an electrochemical reaction, the required metal is plated on the metal dielectric layer of the wafer to form metal wires. In the semiconductor production process, it is necessary to perform an electroplating process on the wafer to form a conductive metal layer on the wafer surface, and the conductive metal layer will be processed later to form a conductive circuit. As the basic material of the chip, the wafer has extremely high requirements for the electroplating coating, so the process requirements are also relatively high.

[0003] Currently, wafer electroplating is to place the wafer in a chemical solution, apply the negative voltage pole to the pre-made metal layer on the wafer, and apply the positive voltage pole to the soluble or insoluble anode. Through the action of the electric field, metal ions in the chemical solution are deposited on the wafer surface. However, during the electroplating process of the wafer, bubbles will be generated in the chemical solution. The bubbles form a vacuum blocking circuit on the wafer surface. Not only can no electroplating layer be formed in the bubble area, resulting in unstable electroplating area, but also the thickness of the electroplating layer formed in the electroplating area is uneven, ultimately leading to the rejection of the wafer electroplating product. Therefore, how to effectively solve the electroplating defects is a technical problem that needs to be solved urgently at present. Summary of the Utility Model

[0004] The purpose of the utility model is to provide an electroplating device, which can improve electroplating defects and enhance the uniformity of electroplating.

[0005] The embodiments of the utility model are implemented as follows:

[0006] On the one hand, the utility model provides an electroplating device, which includes a base and a vibration plate connected to one side of the base; a receiving groove is recessed on the side of the base facing the vibration plate, and the receiving groove is used to receive the wafer to be electroplated. There is a gap between the vibration plate and the base, and the electroplating solution can enter between the wafer to be electroplated and the vibration plate from the gap, and a rotary vibration mechanism is provided on the side of the vibration plate facing the wafer to be electroplated. This electroplating device can improve electroplating defects and enhance the uniformity of electroplating.

[0007] Optionally, the rotary vibration mechanism includes a rotating shaft and rotating fins. The rotating shaft is rotatably connected to the side of the vibration plate facing the base, and the rotating fins are fixedly connected to the outer periphery of the rotating shaft.

[0008] Optionally, the rotational oscillation mechanism is any one of a vibration motor, an ultrasonic vibrator, a pneumatic vibrator, and an electromagnetic vibrator.

[0009] Optionally, the electroplating device further includes a support structure, and the oscillation disk is connected to the base through the support structure.

[0010] Optionally, the support structure includes a support ring and support columns connected to one side of the support ring; the support columns are located on the side of the support ring facing the base, a positioning hole is provided on the side of the base facing the support columns, the positioning hole and the support columns cooperate with each other, and the height of the support columns is greater than the depth of the positioning hole, and a gap is located between the support ring and the base.

[0011] Optionally, there are multiple support columns, and the multiple support columns are evenly distributed on one side of the support ring. There are also multiple positioning holes, and the multiple support columns and the multiple positioning holes are correspondingly matched.

[0012] Optionally, at least part of the rotational oscillation mechanism protrudes from the first surface of the support ring towards the base, and the first surface is the side of the support ring facing the base.

[0013] Optionally, the oscillation disk is fixedly connected inside the support ring, and the side of the oscillation disk facing the base is flush with the side of the support ring facing the base.

[0014] Optionally, the depth of the accommodation groove is the same as the thickness of the wafer to be electroplated.

[0015] Optionally, a glue film layer is provided at the bottom of the accommodation groove, and the glue film layer is used to paste the wafer to be electroplated.

[0016] The beneficial effects of the present utility model include:

[0017] The electroplating device of the present application includes a base and an oscillation disk connected to one side of the base; a accommodation groove is recessed on the side of the base facing the oscillation disk, and the accommodation groove is used to accommodate the wafer to be electroplated. There is a gap between the oscillation disk and the base, and electroplating solution can enter between the wafer to be electroplated and the oscillation disk from the gap, and a rotational oscillation mechanism is provided on the side of the oscillation disk facing the wafer to be electroplated. By providing a base with an accommodation groove in the present application, the wafer to be electroplated can be accommodated in the accommodation groove of the base; by providing an oscillation disk and a rotational oscillation mechanism on the side of the oscillation disk facing the base, in this way, the rotational oscillation mechanism can perform rotational oscillation treatment on the electroplating solution at the gap between the oscillation disk and the base, so as to improve the fluctuation on the surface of the electroplating solution, reduce the risk of bubbles generated on the surface of the wafer to be electroplated, and thus improve the electroplating uniformity. Description of the Drawings

[0018] To more clearly illustrate the technical solutions of the embodiments of the present utility model, the following will briefly introduce the attached drawings required for the embodiments. It should be understood that the following attached drawings only show some embodiments of the present utility model, and therefore should not be regarded as a limitation of the scope. For those of ordinary skill in the art, without creative efforts, other related attached drawings can also be obtained based on these attached drawings.

[0019] Figure 1 Structural schematic diagram of the electroplating device provided by the embodiment of the present utility model;

[0020] Figure 2 Structural schematic diagram of the support structure provided by the embodiment of the present utility model;

[0021] Figure 3 Structural schematic diagram of the base provided by the embodiment of the present utility model;

[0022] Figure 4 Structural schematic diagram of the rotary oscillation mechanism provided by the embodiment of the present utility model.

[0023] Reference numerals: 10 - base; 11 - accommodation groove; 12 - positioning hole; 20 - oscillation plate; 30 - rotary oscillation mechanism; 31 - rotating shaft; 32 - rotating fins; 40 - support structure; 41 - support ring; 42 - support column; 200 - wafer to be electroplated. Detailed implementation manners

[0024] To make the objectives, technical solutions, and advantages of the embodiments of the present utility model clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present utility model with reference to the attached drawings in the embodiments of the present utility model. Obviously, the described embodiments are some, but not all, of the embodiments of the present utility model. Usually, the components of the embodiments of the present utility model described and shown in the attached drawings here can be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of the present utility model provided in the attached drawings is not intended to limit the scope of the claimed present utility model, but merely represents the selected embodiments of the present utility model. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present utility model.

[0026] It should be noted that: similar reference numerals and letters represent similar items in the following attached drawings. Therefore, once an item is defined in one attached drawing, it does not need to be further defined and explained in subsequent attached drawings.

[0027] In the description of the present utility model, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the present utility model is usually placed during use. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present utility model. In addition, the terms "first", "second", "third", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0028] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging vertically, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0029] In the description of the present utility model, it should also be noted that unless otherwise clearly specified and defined, the terms "set", "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0030] Please refer to Figure 1 and Figure 4 , this embodiment provides an electroplating device. The electroplating device includes a base 10 and a vibration plate 20 connected to one side of the base 10; a receiving groove 11 is recessed on the side of the base 10 facing the vibration plate 20, and the receiving groove 11 is used to receive the wafer 200 to be electroplated. There is a gap between the vibration plate 20 and the base 10, and electroplating solution can enter between the wafer 200 to be electroplated and the vibration plate 20 from the gap, and a rotary vibration mechanism 30 is provided on the surface of the vibration plate 20 facing the wafer 200 to be electroplated. This electroplating device can improve electroplating defects and enhance the uniformity of electroplating.

[0031] It should be noted that the electroplating device of the present application includes a base 10, a vibration disk 20, and a rotary vibration mechanism 30. Among them, the base 10 is used to place and limit the wafer 200 to be electroplated. The vibration disk 20 rotates and vibrates through the rotary vibration mechanism 30, so as to eliminate or improve the fluctuations on the surface of the electroplating solution entering through the gap between the base 10 and the vibration disk 20, so as to avoid or improve the defect of bubbles generated on the surface of the wafer 200 to be electroplated, thereby improving the electroplating uniformity. In addition, the rotation of the vibration disk 20 can also promote the ion movement in the electroplating solution. If the wafer 200 to be electroplated has blind holes, it can also increase the liquid exchange between the electroplating solution and the liquid in the blind holes of the wafer 200 to be electroplated, forming ion interaction.

[0032] Please refer to Figure 3 , the above-mentioned base 10 has a receiving groove 11. Among them, the receiving groove 11 is located on the side of the base 10 facing the vibration disk 20, and the receiving groove 11 is used to receive the wafer 200 to be electroplated. It should be noted that if electroplating is only required on one side surface of the wafer 200 to be electroplated, the outer shape of the receiving groove 11 can be adapted to the outer shape of the wafer 200 to be electroplated, that is, the inner diameter of the receiving groove 11 is the same as the outer diameter of the wafer 200 to be electroplated, and the outer wall of the wafer 200 to be electroplated fits against the inner wall of the receiving groove 11; if electroplating is required on both one side surface and the outer peripheral wall of the wafer 200 to be electroplated, the inner diameter of the receiving groove 11 can be larger than the outer diameter of the wafer 200 to be electroplated, and the wafer 200 to be electroplated can be placed in the central area of the receiving groove 11.

[0033] The outer shape structure of the base 10 is not limited in the present application, as long as it can play a role in supporting and fixing the wafer 200 to be electroplated.

[0034] The vibration disk 20 is arranged on one side of the base 10 and is connected to the base 10. It should be noted that the vibration disk 20 is indirectly connected to the base 10. In this way, a gap can be generated between the vibration disk 20 and the base 10, and this gap can be used for the electroplating solution to pass through, so as to electroplate the surface of the wafer 200 to be electroplated.

[0035] The rotary vibration mechanism 30 is arranged on the side of the vibration disk 20 facing the base 10. In this way, the rotary vibration mechanism 30 can play a role in evenly distributing the electroplating solution through vibration, thereby effectively eliminating the fluctuations generated on the surface of the electroplating solution, effectively reducing the bubbles generated on the surface of the wafer 200 to be electroplated, and reducing electroplating defects.

[0036] In summary, the electroplating device of the present application includes a base 10 and a vibrating disk 20 connected to one side of the base 10. A receiving groove 11 is recessed on the side of the base 10 facing the vibrating disk 20. The receiving groove 11 is used to receive the wafer 200 to be electroplated. There is a gap between the vibrating disk 20 and the base 10, and electroplating solution can enter between the wafer 200 to be electroplated and the vibrating disk 20 from the gap. And a rotary vibration mechanism 30 is provided on the surface of the vibrating disk 20 facing the wafer 200 to be electroplated. By providing the base 10 with the receiving groove 11 in the present application, the wafer 200 to be electroplated can be received in the receiving groove 11 of the base 10. By providing the vibrating disk 20 and arranging the rotary vibration mechanism 30 on the surface of the vibrating disk 20 facing the base 10, in this way, the rotary vibration mechanism 30 can perform rotary vibration treatment on the electroplating solution at the gap between the vibrating disk 20 and the base 10, thereby improving the fluctuation of the surface of the electroplating solution to reduce the risk of bubbles generated on the surface of the wafer 200 to be electroplated, and thus improving the uniformity of electroplating.

[0037] It should be noted that the present application does not limit the structure of the rotary vibration mechanism 30, as long as the rotary vibration mechanism 30 can play a role in rotary vibration on the electroplating solution.

[0038] Optionally, in a feasible implementation manner, please refer to Figure 4 As shown, the rotary vibration mechanism 30 includes a rotating shaft 31 and rotating fins 32. The rotating shaft 31 is rotatably connected to the side of the vibrating disk 20 facing the base 10, and the rotating fins 32 are fixedly connected to the outer periphery of the rotating shaft 31. In this way, the driven rotation of the rotating shaft 31 can drive the rotation of the rotating fins 32, and the rotation of the rotating fins 32 can improve the fluctuation of the surface of the electroplating solution, thereby reducing the risk of bubbles generated on the surface of the wafer 200 to be electroplated.

[0039] In another feasible implementation manner, optionally, the rotary vibration mechanism 30 is any one of a vibration motor, an ultrasonic vibrator, a pneumatic vibrator, and an electromagnetic vibrator.

[0040] Please refer to FIG. 1 and Figure 2 , optionally, the electroplating device further includes a support structure 40, and the vibrating disk 20 is connected to the base 10 through the support structure 40. Among them, the present application does not limit the specific structure of the support structure 40, as long as it can play a role in connecting the base 10 and the vibrating disk 20 and does not affect the gap.

[0041] It should be noted that when the electroplating device further includes the support structure 40, the above-mentioned gap can be provided on the support structure 40. In this way, the electroplating solution can enter between the vibrating disk 20 and the wafer 200 to be electroplated through the support structure 40.

[0042] Optionally, please refer to Figure 2, the support structure 40 may include a support ring 41 and support columns 42 connected to one side of the support ring 41; the support columns 42 are located on the side of the support ring 41 facing the base 10, and positioning holes 12 are provided on the side of the base 10 facing the support columns 42. The positioning holes 12 and the support columns 42 cooperate with each other, and the height of the support columns 42 is greater than the depth of the positioning holes 12, and a gap is located between the support ring 41 and the base 10.

[0043] In this way, the support ring 41 can be used to connect and fix the oscillating disk 20, the support columns 42 can be used to connect the support ring 41 and the base 10, and a gap can be located between the support ring 41 and the base 10, that is, the gap between two adjacent support columns 42 is the gap.

[0044] In this embodiment, the support columns 42 are connected to the positioning holes 12, and the height of the support columns 42 should be greater than the depth of the positioning holes 12. In this way, at least part of the support columns 42 can extend out of the positioning holes 12, so that a gap can be generated between the base 10 and the support ring 41.

[0045] In addition, the present application does not limit the number of the support columns 42 and the positioning holes 12, but it should be noted that the number of the positioning holes 12 should be equal to or greater than the number of the support columns 42, and each support column 42 should be correspondingly provided with a positioning hole 12. Of course, it is best that the support columns 42 and the positioning holes 12 are in one-to-one correspondence.

[0046] To improve the working reliability of the support structure 40, optionally, the support columns 42 include a plurality of them, and the plurality of support columns 42 are evenly distributed on one side of the support ring 41. The positioning holes 12 also include a plurality of them, and the plurality of support columns 42 and the plurality of positioning holes 12 are correspondingly matched. In this way, the plurality of evenly distributed support columns 42 can evenly distribute the pressure, and the overall structure of the electroplating device is more reliable.

[0047] To better play the role of rotational oscillation, optionally, at least part of the rotational oscillation mechanism 30 protrudes from the first surface of the support ring 41 facing the base 10, and the first surface is the side of the support ring 41 facing the base 10. In other words, the rotational oscillation mechanism 30 protrudes from one side of the support ring 41.

[0048] It should be noted that the oscillating disk 20 can be fixed to the side of the support ring 41 facing away from the support columns 42, and the rotational oscillation mechanism 30 passes through the inner hole of the support ring 41 and extends outwards; or, the above oscillating disk 20 can also be fixedly connected inside the support ring 41, and the side of the oscillating disk 20 facing the base 10 is flush with the side of the support ring 41 facing the base 10.

[0049] That is, the oscillating disk 20 can be fixed to the side of the support ring 41 facing away from the support columns 42, or can be embedded in the inner hole of the support ring 41.

[0050] In order to perform electroplating better, in this embodiment, optionally, the depth of the accommodating groove 11 is the same as the thickness of the wafer 200 to be electroplated. In this way, the upper surface of the wafer 200 to be electroplated can be flush with one side of the base 10.

[0051] In addition, in order to facilitate the fixing of the wafer 200 to be electroplated and prevent the wafer 200 to be electroplated from being displaced, optionally, an adhesive film layer is provided at the bottom of the accommodating groove 11, and the adhesive film layer is used to paste the wafer 200 to be electroplated.

[0052] The above are only optional embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

[0053] In addition, it should be noted that, among the various specific technical features described in the above specific embodiments, without conflict, they can be combined in any appropriate manner. To avoid unnecessary repetition, the present invention will not separately describe various possible combination methods.

Claims

1. An electroplating device, characterized in that: It includes a base and an oscillation plate connected to one side of the base; a accommodating groove is recessed on the side of the base facing the oscillation plate, the accommodating groove is used to accommodate the wafer to be electroplated, there is a gap between the oscillation plate and the base, the plating solution can enter between the wafer to be electroplated and the oscillation plate from the gap, and a rotating oscillation mechanism is provided on the side of the oscillation plate facing the wafer to be electroplated.

2. The electroplating device according to claim 1, characterized in that: The rotary oscillation mechanism comprises a rotating shaft and a rotating fin. The rotating shaft is rotatably connected to a side of the oscillation disk facing the base, and the rotating fin is fixedly connected to the outer periphery of the rotating shaft.

3. The electroplating device according to claim 1, characterized in that: The rotary oscillation mechanism is any one of a vibration motor, an ultrasonic vibrator, a pneumatic vibrator and an electromagnetic vibrator.

4. The electroplating device according to claim 1, characterized in that: The electroplating device also includes a supporting structure, and the oscillation plate is connected to the base through the supporting structure.

5. The electroplating device according to claim 4, characterized in that: The support structure includes a support ring and a support column connected to one side of the support ring; the support column is located on the side of the support ring facing the base, and a positioning hole is provided on the side of the base facing the support column. The positioning hole and the support column cooperate with each other, and the height of the support column is greater than the depth of the positioning hole, and the gap is located between the support ring and the base.

6. The electroplating device according to claim 5, characterized in that: The supporting columns include a plurality of columns, and the plurality of supporting columns are evenly distributed on one side of the supporting ring. The positioning holes also include a plurality of columns, and the plurality of supporting columns and the plurality of positioning holes are matched with each other.

7. The electroplating device according to claim 5, characterized in that: The rotational oscillation mechanism is at least partially protruded from a first surface of the support ring toward the base, and the first surface is a side of the support ring facing the base.

8. The electroplating device according to claim 7, characterized in that: The oscillation plate is fixedly connected in the support ring, and a side of the oscillation plate facing the base is flush with a side of the support ring facing the base.

9. The electroplating device according to claim 1, characterized in that: The depth of the containing groove is the same as the thickness of the wafer to be electroplated.

10. The electroplating device according to claim 1, characterized in that: The bottom of the accommodating groove is provided with an adhesive film layer, and the adhesive film layer is used for sticking the wafer to be electroplated.

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