Device for testing thickness of wafer in grinding process
By designing a test device including telescopic components and ultrasonic detection mechanism, the problem of the inability to detect wafer thickness in real time during the grinding process in the prior art is solved, and rapid detection of wafer thickness and secondary grinding are realized, which improves the processing speed and practicality of the device.
Patent Information
- Application Number
- CN202421800764.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-29
- Publication Date
- 2025-05-30
- Estimated Expiration
- 2034-07-29
AI Technical Summary
The existing wafer thickness test device cannot detect the thickness of the wafer in real time during the grinding process, resulting in products with unqualified thicknesses that need to be returned to the grinding device for secondary grinding, which affects the processing speed.
A test device including a support plate, a telescopic assembly, a mounting plate, a grinding mechanism, an electric push rod and an ultrasonic detection mechanism are designed. The mounting plate is moved by the telescopic assembly, and the grinding mechanism and the ultrasonic detection mechanism move downward together, so as to achieve grinding of the wafer and real-time thickness detection.
The device can immediately perform thickness detection after the wafer is ground, and can immediately perform secondary grinding when encountering wafers that do not meet the standards, which improves the practicality of the device and the wafer processing speed.
Smart Images
Figure CN222926181U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of wafer processing, in particular to a testing device for the thickness of wafers in a grinding process. Background Technique
[0002] Wafers are first made by purifying, melting, and distilling silicon dioxide to form silicon ingots. Then, wafer factories grind, polish, and slice these silicon ingots into wafer blanks. During the wafer grinding process, it is necessary to detect the thickness of the wafers to ensure that the thickness of the wafers is qualified.
[0003] The existing testing devices for the thickness of wafers cannot detect the thickness of wafers during grinding. Usually, after the wafers are ground, they need to be transported into the testing device for detection. Unqualified products with a relatively thick thickness need to be sent back into the grinding device for secondary grinding, which affects the processing speed of the wafers. Content of the Utility Model
[0004] Aiming at the deficiencies of the prior art, the utility model provides a testing device for the thickness of wafers in a grinding process to solve the problems raised in the above background technique.
[0005] In order to achieve the above purpose, the utility model adopts the following technical scheme:
[0006] A testing device for the thickness of wafers in a grinding process includes a support plate. A support frame is fixedly arranged at the top of the support plate. A telescopic component is arranged at the top of the support frame. An installation plate is arranged on the support frame through the telescopic component. A grinding mechanism is fixedly arranged at the bottom of the installation plate. An electric push rod is fixedly arranged at the bottom of the installation plate. An ultrasonic detection mechanism is fixedly arranged at the extended end of the electric push rod. A connecting plate is fixedly arranged at the rear side of the installation plate. A nozzle is fixedly arranged inside the connecting plate. A fixed frame is fixedly arranged at the top of the support plate. A front-back moving component is arranged inside the fixed frame. A first moving frame is arranged on the fixed frame through the front-back moving component. A left-right moving component is arranged inside the first moving frame. A second moving frame is arranged on the first moving frame through the left-right moving component. A fixing component is arranged at the top of the second moving frame.
[0007] Preferably, the telescopic component includes a telescopic cylinder fixedly arranged at the top of the support frame. The output end of the telescopic cylinder penetrates through the support frame and extends into the interior of the support frame and is fixedly provided with a connecting block. The bottom of the connecting block is fixedly connected with the installation plate.
[0008] Preferably, the front-back moving component includes a first rotating motor fixedly arranged on the front side of the fixed frame. The output end of the first rotating motor penetrates through the fixed frame and extends into the interior of the fixed frame, and a first screw rod is fixedly arranged thereon. A first moving block is threadedly arranged on the surface of the first screw rod, and the top of the first moving block is fixedly connected to the first moving frame.
[0009] Preferably, the left-right moving component includes a second rotating motor fixedly arranged on the right side of the first moving frame. The output end of the second rotating motor penetrates through the first moving frame and extends into the interior of the first moving frame, and a second screw rod is fixedly arranged thereon. A second moving block is threadedly arranged on the surface of the second screw rod, and the top of the second moving block is fixedly connected to the second moving frame.
[0010] Preferably, the fixing component includes a third screw rod fixedly arranged inside the second moving frame, and a clamping plate is fixedly arranged at one end of the third screw rod close to the center of the second moving frame.
[0011] Preferably, the number of the clamping plates is two, and the two clamping plates are symmetrically distributed inside the second moving frame.
[0012] Preferably, the number of the nozzles is multiple, and the multiple nozzles are linearly distributed inside the connecting plate.
[0013] Compared with the prior art, the beneficial effect of the present utility model is as follows: For the testing device of the thickness of the wafer in the grinding process, the telescopic component is used to move the mounting plate. The movement of the mounting plate causes the grinding mechanism, the electric push rod, and the ultrasonic detection mechanism to move downward together. The wafer is ground by the grinding mechanism, and the powder generated by grinding is removed from the wafer by spraying gas through the nozzles. After grinding is completed, the mounting plate is moved downward and the extending end of the electric push rod is extended, so that the grinding sheet in the grinding mechanism is separated from the wafer. The ultrasonic detection head inside the ultrasonic detection mechanism contacts the wafer. Ultrasonic waves are emitted by the ultrasonic detection head, and the ultrasonic waves propagate inside the wafer. After encountering the bottom of the wafer, a part of the ultrasonic waves will be reflected back. The ultrasonic waves are received by the ultrasonic detection head. By multiplying the moving speed of the ultrasonic waves by the round-trip time of the ultrasonic waves, twice the thickness of the wafer can be obtained, and then subtracting half is the thickness of the wafer. This device immediately detects the thickness of the wafer after grinding. When a wafer with unqualified thickness is encountered, secondary grinding can be immediately carried out, which improves the practicability of the device and the processing speed of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 is the orthographic axonometric drawing of the structure of the present utility model;
[0015] Figure 2 is the right sectional view of the structure of the present utility model;
[0016] Figure 3 This is the front sectional view of the structure of the present utility model;
[0017] Figure 4 is Figure 3 the enlarged view of the structure at position A of
[0018] In the figure: 1, support plate; 2, support frame; 3, telescopic cylinder; 4, connecting block; 5, mounting plate; 6, connecting plate; 7, nozzle; 8, grinding mechanism; 9, electric push rod; 10, ultrasonic detection mechanism; 11, fixing frame; 12, first rotating motor; 13, first moving block; 14, first moving frame; 15, second screw rod; 16, second moving block; 17, second moving frame; 18, third screw rod; 19, clamping plate; 20, second rotating motor; 21, first screw rod. Specific embodiments
[0019] Next, the technical solutions in the embodiments of the present utility model will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.
[0020] Refer to Figures 1-4, A testing device for the thickness of a wafer in a grinding process, including a support plate 1. A support frame 2 is fixedly arranged on the top of the support plate 1. A telescopic component is arranged on the top of the support frame 2. The support frame 2 is provided with a mounting plate 5 through the telescopic component. A grinding mechanism 8 is fixedly arranged at the bottom of the mounting plate 5. The grinding mechanism 8 is a motor and a grinding disc, and the grinding disc is driven by the motor to rotate to grind the wafer. An electric push rod 9 is fixedly arranged at the bottom of the mounting plate 5. An ultrasonic detection mechanism 10 is fixedly arranged at the extended end of the electric push rod 9. A connecting plate 6 is fixedly arranged at the rear side of the mounting plate 5. A nozzle 7 is fixedly arranged inside the connecting plate 6. The number of nozzles 7 is multiple, and the multiple nozzles 7 are linearly distributed inside the connecting plate 6. The multiple nozzles 7 can spray gas to blow away the dust generated during the grinding of the wafer, preventing the dust from falling onto the surface of the wafer, thus affecting the ultrasonic detection of the wafer. A fixing frame 11 is fixedly arranged on the top of the support plate 1. A front-back moving component is arranged inside the fixing frame 11. The fixing frame 11 is provided with a first moving frame 14 through the front-back moving component. A left-right moving component is arranged inside the first moving frame 14. The first moving frame 14 is provided with a second moving frame 17 through the left-right moving component. A fixing component is arranged on the top of the second moving frame 17. For this testing device for the thickness of the wafer in the grinding process, the mounting plate 5 is moved through the telescopic component. The movement of the mounting plate 5 causes the grinding mechanism 8, the electric push rod 9, and the ultrasonic detection mechanism 10 to move downward together. The wafer is ground by the grinding mechanism 8, and the powder generated by grinding is removed from the wafer by spraying gas through the nozzle 7. After grinding, the mounting plate 5 is moved downward and the electric push rod 9 is extended, so that the grinding disc in the grinding mechanism 8 is separated from the wafer. The ultrasonic probe inside the ultrasonic detection mechanism 10 contacts the wafer. Ultrasonic waves are emitted by the ultrasonic probe. The ultrasonic waves propagate inside the wafer. After encountering the bottom of the wafer, a part of the ultrasonic waves will be reflected back. The ultrasonic waves are received by the ultrasonic probe. Multiplying the moving speed of the ultrasonic waves by the round-trip time of the ultrasonic waves can obtain twice the thickness of the wafer, and then subtracting half is the thickness of the wafer. This device immediately measures the thickness of the wafer after grinding. When a wafer with an unqualified thickness is encountered, it can be immediately reground, improving the practicability of the device and the processing speed of the wafer.
[0021] Specifically, the telescopic component includes a telescopic cylinder 3 fixedly arranged on the top of the support frame 2. The output end of the telescopic cylinder 3 penetrates through the support frame 2 and extends to the inside of the support frame 2 and is fixedly provided with a connecting block 4. The bottom of the connecting block 4 is fixedly connected to the mounting plate 5. Driving the output end of the telescopic cylinder 3 to extend, the connecting block 4 is pushed to move downward. The downward movement of the connecting block 4 drives the mounting plate 5 to move. The movement of the mounting plate 5 causes the grinding mechanism 8, the electric push rod 9, and the ultrasonic detection mechanism 10 to move downward together, so as to control the distance between the grinding mechanism 8 and the wafer, facilitating the detection and placement of the wafer.
[0022] Specifically, the forward and backward moving component includes a first rotating motor 12 fixedly arranged on the front side of the fixing frame 11. The output end of the first rotating motor 12 penetrates through the fixing frame 11 and extends into the interior of the fixing frame 11, and a first screw rod 21 is fixedly arranged. A first moving block 13 is arranged on the surface of the first screw rod 21 in a threaded manner. The top of the first moving block 13 is fixedly connected to a first moving frame 14. The left and right moving component includes a second rotating motor 20 fixedly arranged on the right side of the first moving frame 14. The output end of the second rotating motor 20 penetrates through the first moving frame 14 and extends into the interior of the first moving frame 14, and a second screw rod 15 is fixedly arranged. A second moving block 16 is arranged on the surface of the second screw rod 15 in a threaded manner. The top of the second moving block 16 is fixedly connected to a second moving frame 17. Start the first rotating motor 12 to drive the first screw rod 21 to rotate. The rotation of the first screw rod 21 drives the first moving block 13 to move, and the movement of the first moving block 13 drives the first moving frame 14 to move. Start the second rotating motor 20 to drive the second screw rod 15 to rotate. The rotation of the second screw rod 15 drives the second moving block 16 to move, and the movement of the second moving block 16 drives the second moving frame 17 to move, so as to adjust the position of the fixed wafer, and then the thickness of different positions of the wafer can be detected, so as to ensure that the thickness of each position of the wafer is consistent.
[0023] Specifically, the fixing component includes a third screw rod 18 fixedly arranged inside the second moving frame 17. A clamping plate 19 is fixedly arranged at one end of the third screw rod 18 close to the center of the second moving frame 17. The number of the clamping plates 19 is two, and the two clamping plates 19 are symmetrically distributed inside the second moving frame 17. Rotate the third screw rod 18 to make the clamping plate 19 move, and clamp and fix the wafer through the clamping plates 19 on both sides to prevent the wafer from shaking when the wafer is detected and ground.
[0024] All the electrical components mentioned in this article are electrically connected to an external main controller and 220V mains power supply, and the main controller can be a conventional known device such as a computer for control.
[0025] During use: Rotate the third screw rod 18 to move the clamping plate 19, and clamp and fix the wafer by the clamping plates 19 on both sides. Then drive the telescopic cylinder 3 to extend its output end, pushing the connecting block 4 to move downward. The downward movement of the connecting block 4 drives the mounting plate 5 to move. The movement of the mounting plate 5 causes the grinding mechanism 8, the electric push rod 9, and the ultrasonic detection mechanism 10 to move downward together. Grind the wafer by the grinding mechanism 8, and spray gas through the nozzle 7 to remove the powder generated by grinding from the wafer. After grinding is completed, drive the telescopic cylinder 3 to shorten its extension end and extend the extension end of the electric push rod 9, so that the grinding sheet in the grinding mechanism 8 is separated from the wafer. The ultrasonic detection head inside the ultrasonic detection mechanism 10 contacts the wafer, and ultrasonic waves are emitted through the ultrasonic detection head. The ultrasonic waves propagate inside the wafer. After encountering the bottom of the wafer, part of the ultrasonic waves will be reflected back. The ultrasonic waves are received by the ultrasonic detection head. Multiply the moving speed of the ultrasonic waves by the round-trip time of the ultrasonic waves to obtain twice the thickness of the wafer, and then subtract half to get the thickness of the wafer immediately. When the thickness does not meet the standard, the above operations can be repeated until the thickness of the wafer is appropriate.
[0026] In summary, for the test device for the thickness of the wafer in this grinding process, the telescopic component is used to move the mounting plate 5. The movement of the mounting plate 5 causes the grinding mechanism 8, the electric push rod 9, and the ultrasonic detection mechanism 10 to move downward together. Grind the wafer by the grinding mechanism 8, and spray gas through the nozzle 7 to remove the powder generated by grinding from the wafer. After grinding is completed, move the mounting plate 5 downward and extend the extension end of the electric push rod 9, so that the grinding sheet in the grinding mechanism 8 is separated from the wafer. The ultrasonic detection head inside the ultrasonic detection mechanism 10 contacts the wafer, and ultrasonic waves are emitted through the ultrasonic detection head. The ultrasonic waves propagate inside the wafer. After encountering the bottom of the wafer, part of the ultrasonic waves will be reflected back. The ultrasonic waves are received by the ultrasonic detection head. Multiply the moving speed of the ultrasonic waves by the round-trip time of the ultrasonic waves to obtain twice the thickness of the wafer, and then subtract half to get the thickness of the wafer immediately. This device immediately detects the thickness of the wafer after grinding. When a wafer with an unqualified thickness is encountered, secondary grinding can be carried out immediately, improving the practicability of the device and the processing speed of the wafer.
[0027] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "including", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device.
[0028] Although the embodiments of the present utility model have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principle and spirit of the present utility model. The scope of the present utility model is defined by the appended claims and their equivalents.
Claims
1. A wafer thickness testing device in a grinding process, comprising a support plate (1), characterized in that: A support frame (2) is fixedly arranged on the top of the support plate (1), a telescopic assembly is arranged on the top of the support frame (2), a mounting plate (5) is arranged on the support frame (2) through the telescopic assembly, a grinding mechanism (8) is fixedly arranged on the bottom of the mounting plate (5), an electric push rod (9) is fixedly arranged on the bottom of the mounting plate (5), an ultrasonic detection mechanism (10) is fixedly arranged on the extended end of the electric push rod (9), a connecting plate (6) is fixedly arranged on the rear side of the mounting plate (5), a nozzle (7) is fixedly arranged inside the connecting plate (6), a fixed frame (11) is fixedly arranged on the top of the support plate (1), a front-rear moving assembly is arranged inside the fixed frame (11), a first moving frame (14) is arranged on the fixed frame (11) through the front-rear moving assembly, a left-right moving assembly is arranged inside the first moving frame (14), a second moving frame (17) is arranged on the first moving frame (14) through the left-right moving assembly, and a fixed assembly is arranged on the top of the second moving frame (17).
2. The device for testing wafer thickness in a grinding process according to claim 1, characterized in that: The telescopic assembly comprises a telescopic cylinder (3) fixedly arranged on the top of the support frame (2); an output end of the telescopic cylinder (3) penetrates the support frame (2) and extends to the interior of the support frame (2) and is fixedly provided with a connecting block (4); the bottom of the connecting block (4) is fixedly connected to a mounting plate (5).
3. The device for testing wafer thickness in a grinding process according to claim 1, characterized in that: The forward and backward moving assembly comprises a first rotating motor (12) fixedly arranged on the front side of a fixed frame (11); an output end of the first rotating motor (12) penetrates the fixed frame (11) and extends to the interior of the fixed frame (11) and is fixedly provided with a first screw rod (21); a first moving block (13) is threadedly arranged on the surface of the first screw rod (21); and a top of the first moving block (13) is fixedly connected to the first moving frame (14).
4. The device for testing wafer thickness in a grinding process according to claim 1, characterized in that: The left-right moving assembly comprises a second rotating motor (20) fixedly arranged on the right side of the first moving frame (14); an output end of the second rotating motor (20) passes through the first moving frame (14) and extends to the inside of the first moving frame (14) and is fixedly provided with a second screw rod (15); a second moving block (16) is threadedly arranged on the surface of the second screw rod (15); and a top of the second moving block (16) is fixedly connected to the second moving frame (17).
5. The device for testing wafer thickness in a grinding process according to claim 1, characterized in that: The fixing assembly comprises a third screw rod (18) fixedly arranged inside the second movable frame (17); a clamping plate (19) is fixedly arranged at one end of the third screw rod (18) close to the center of the second movable frame (17).
6. The device for testing wafer thickness in a grinding process according to claim 5, characterized in that: The number of the clamping plates (19) is two, and the two clamping plates (19) are symmetrically distributed inside the second moving frame (17).
7. The device for testing wafer thickness in a grinding process according to claim 1, characterized in that: The number of the nozzles (7) is multiple, and the multiple nozzles (7) are linearly distributed inside the connecting plate (6).