Driving device, power module system and electric vehicle

Abstract

The utility model discloses a driving device, a power module system and an electric vehicle. The driving device comprises a current detection module, a microcontroller and a plurality of logic driving modules. The microcontroller is respectively connected with the current detection module and the plurality of logic driving modules, the plurality of logic driving modules are respectively connected with a power module device comprising a plurality of power modules, the plurality of logic driving modules are in one-to-one correspondence with the plurality of power modules, and each power module comprises a first-type switching device and a second-type switching device; the current detection module detects the output current of the power module; when the output current is smaller than or equal to a current threshold value, the microcontroller controls the corresponding logic driving module to drive the corresponding first-type switching device, and when the output current is larger than the current threshold value, the microcontroller controls the corresponding logic driving module to drive the corresponding second-type switching device. According to the embodiment of the invention, driving of different types of switching devices in the hybrid power module is realized through the output current of the hybrid power module.

Description

Technical Field

[0001] This application relates to the technical field of electronic circuits, and particularly to a driving device, a power module system, and an electric vehicle. Background Art

[0002] With the development of 800V power electronics technology and the third-generation power devices, high-power switching devices have been widely used in power electronics fields such as new energy vehicles and industrial frequency converters. Using a single type of high-power switching device either has high power consumption or high cost. To solve the above problems, the industry has proposed using a hybrid power module including two types of high-power switching devices. However, how to drive different types of switching devices included in the hybrid power module has become an urgent problem to be solved. Summary of the Utility Model

[0003] Embodiments of this application disclose a driving device, a power module system, and an electric vehicle, which are used to drive different types of switching devices in a hybrid power module by the output current of the hybrid power module.

[0004] In a first aspect, embodiments of this application disclose a driving device, including a current detection module, a microcontroller, and multiple logic driving modules;

[0005] The microcontroller is respectively connected to the current detection module and the multiple logic driving modules, the multiple logic driving modules are respectively connected to a power module device, the power module device includes multiple power modules, the multiple logic driving modules correspond to the multiple power modules one by one, the power module includes a first type of switching device and a second type of switching device, the current detection module is disposed at the output end of the power module device, and the power consumption of the first type of switching device is less than that of the second type of switching device;

[0006] The current detection module is used to detect the output current of a first power module to obtain a first output current, where the first power module is any one of the multiple power modules;

[0007] The microcontroller is used to send a first control signal to a first logic driving module when the first output current is less than or equal to a current threshold, and send a second control signal to the first logic driving module when the first output current is greater than the current threshold, where the first logic driving module is the logic driving module corresponding to the first power module among the multiple logic driving modules;

[0008] The first logic driving module is used to control the first type of switching device in the first power module to work according to the first control signal, and control the second type of switching device in the first power module to work according to the second control signal.

[0009] In a second aspect, an embodiment of the present application discloses a power module system, which includes the driving device and the power module device disclosed in the first aspect. The power module device includes a plurality of power modules. The plurality of logic driving modules correspond to the plurality of power modules one by one. Each power module includes a first type of switching device and a second type of switching device, and the power consumption of the first type of switching device is less than that of the second type of switching device.

[0010] The power module device is used to drive an electric motor.

[0011] In a third aspect, the present application discloses an electric vehicle, which includes the driving device disclosed in the first aspect or the power module system disclosed in the second aspect.

[0012] In an embodiment of the present application, the driving device includes a current detection module, a microcontroller, and a plurality of logic driving modules. The microcontroller is respectively connected to the current detection module and the plurality of logic driving modules. The plurality of logic driving modules are connected to the power module device. The power module device includes a plurality of power modules. The plurality of logic driving modules correspond to the plurality of power modules one by one. Each power module includes a first type of switching device and a second type of switching device. The current detection module is disposed at the output end of the power module device, and the power consumption of the first type of switching device is less than that of the second type of switching device. The current detection module detects the output current of the first power module to obtain a first output current. When the first output current is less than or equal to a current threshold, the microcontroller sends a first control signal to the first logic driving module corresponding to the first power module. When the first output current is greater than the current threshold, the microcontroller sends a second control signal to the first logic driving module. The first logic driving module controls the first type of switching device in the first power module to conduct according to the first control signal, and controls the second type of switching device in the first power module to conduct according to the second control signal. It can be seen that the driving device detects the output current of the power module in the power module device, and controls the operation of the two types of switching devices in the power module according to the comparison result between the output current and the current threshold, so as to realize the switching of the driving of the power module under different output currents of the power module, and can drive different types of switching devices in the hybrid power module by mixing the output currents of the power module. In addition, different types of switching devices in the hybrid power module can be driven by mixing the output currents of the power module, a closed-loop control of the power module device can be achieved, and the situation where the power module device always operates with the same type of switching device can be avoided. Further, since the situation where the power module device always operates with the same type of switching device is avoided, the situation where the power module device always operates with the switching device with a larger power consumption can be avoided, thereby optimizing the power of the power module device. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0014] Figure 1 It is a schematic structural diagram of a driving device disclosed in an embodiment of the present application;

[0015] Figure 2 It is a schematic structural diagram of another driving device disclosed in an embodiment of the present application;

[0016] Figure 3 It is a schematic structural diagram of yet another driving device disclosed in an embodiment of the present application;

[0017] Figure 4 It is a schematic structural diagram of yet another driving device disclosed in an embodiment of the present application;

[0018] Figure 5 It is a schematic structural diagram of yet another driving device disclosed in an embodiment of the present application;

[0019] Figure 6 It is a schematic structural diagram of a power module system disclosed in an embodiment of the present application;

[0020] Figure 7 It is a schematic structural diagram of another power module system disclosed in an embodiment of the present application. Detailed implementation manners

[0021] In order to enable those skilled in the art to better understand the solutions of the present application, the following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application.

[0022] The embodiments of the present application disclose a driving device, a power module system and an electric vehicle, which are used to drive different types of switching devices in the hybrid power module by mixing the output currents of the hybrid power module. The following will be described in detail respectively.

[0023] To better understand the embodiments of the present application, the related technologies of the embodiments of the present application will be described first below.

[0024] With the development of 800V power electronics technology and the third-generation power devices, high-power switching devices have been widely used in power electronics fields such as new energy vehicles and industrial frequency converters. The high-power switching device can be a silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET), that is, a SiC metal oxide semiconductor (MOS) transistor, or an insulated gate bipolar transistor (IGBT). However, the cost of SiC MOS transistors is relatively high, and the power consumption of IGBTs is relatively large.

[0025] To avoid the high cost and large power consumption of high-power switching devices, the business proposes to use a hybrid power module. The internal crystal sources and power chips of the hybrid power module no longer use a single type of high-power switching device, but can integrate multiple types of high-power switching devices, maximizing the efficiency of high-power switching devices while ensuring the hardware cost. However, how to drive different types of switching devices in the hybrid power module has become an urgent problem to be solved.

[0026] To solve the above problems, the present application designs a driving device, which includes a current detection module, a microcontroller, and multiple logic driving modules; the microcontroller is respectively connected to the current detection module and the multiple logic driving modules, the multiple logic driving modules are connected to a power module device, the power module device includes multiple power modules, the multiple logic driving modules correspond to the multiple power modules one by one, the power module includes a first type of switching device and a second type of switching device, the current detection module is arranged at the output end of the power module device, and the power consumption of the first type of switching device is less than that of the second type of switching device; the current detection module detects the output current of the first power module to obtain a first output current; when the first output current is less than or equal to the current threshold, the microcontroller sends a first control signal to the first logic driving module corresponding to the first power module, and when the first output current is greater than the current threshold, the microcontroller sends a second control signal to the first logic driving module; the first logic driving module controls the conduction of the first type of switching device in the first power module according to the first control signal, and controls the conduction of the second type of switching device in the first power module according to the second control signal. It can be seen that the driving device detects the output current of the power module in the power module device, and controls the operation of the two types of switching devices in the power module according to the comparison result between the output current and the current threshold, so as to realize the switching of the driving of the power module under different output currents of the power module, and can drive different types of switching devices in the hybrid power module by mixing the output current of the power module. In addition, different types of switching devices in the hybrid power module can be driven by mixing the output current of the power module, closed-loop control of the power module device can be realized, and the situation where the power module device always works with the same type of switching device can be avoided. Further, since the situation where the power module device always works with the same type of switching device is avoided, the situation where the power module device always works with the switching device with a larger power consumption can be avoided, thereby optimizing the power of the power module device.

[0027] Please refer to Figure 1 , Figure 1 which is a schematic structural diagram of a driving device disclosed in an embodiment of the present application. As Figure 1 shown, the driving device may include a current detection module, a microcontroller (Micro Control Unit, MCU), and multiple logic driving modules.

[0028] The microcontroller is respectively connected to the current detection module and the multiple logic driving modules, and the multiple logic driving modules are respectively connected to a power module device.

[0029] The power module device may include a plurality of power modules. A plurality of logic drive modules correspond one-to-one with the plurality of power modules, that is, each logic drive module in the plurality of logic drive modules is connected to a corresponding one of the plurality of power modules. Each power module in the plurality of power modules includes a first type of switching device and a second type of switching device. The power consumption of the first type of switching device is less than that of the second type of switching device, that is, the power consumption of the first type of switching device is small, and the power consumption of the second type of switching device is large. The first type of switching device may be a MOS transistor with high efficiency, strong withstand voltage characteristics, and fast turn-on and turn-off rates. The first type of switching device may be a SIC MOS transistor, or a gallium nitride (GaN) MOS transistor, or other MOS transistors with high efficiency, strong withstand voltage characteristics, and fast turn-on and turn-off rates. The second type of switching device may be an IGBT, or other low-cost switching devices.

[0030] The current detection module is disposed at the output end of the power module device, but there is no connection with the power module device. The current detection module can detect the output current of the first power module to obtain the first output current, and then can send the first output current to the microcontroller. The current detection module can detect the output current of the first power module in a non-contact manner. The first power module is any one of the plurality of power modules. It can be seen that the current detection module can detect the output current of each power module in the plurality of power modules, and then can send the detected output currents of the plurality of power modules to the microcontroller.

[0031] The current detection module may include a plurality of current detection units. The plurality of current detection units correspond one-to-one with the plurality of power modules. Each current detection unit in the plurality of current detection units is respectively disposed at the output end of the corresponding power module, can detect the output current of the corresponding power module, and then can send the detected output current of the corresponding power module to the microcontroller. The current detection unit may be a Current Transformer (CT), or a chip resistor current sensor, or a Hall sensor, or other devices, devices or chips that can detect current in a non-contact manner.

[0032] The microcontroller stores a current threshold. Therefore, after the microcontroller receives the first output current from the current detection module, it can compare the first output current with the current threshold. When the comparison result is that the first output current is less than or equal to the current threshold, it indicates that the output current of the first power module is small, and a first control signal can be sent to the first logic drive module. When the comparison result is that the first output current is greater than the current threshold, it indicates that the output current of the first power module is large, and a second control signal can be sent to the first logic drive module.

[0033] After the first logic drive module receives the first control signal from the microcontroller, it can control the operation of the first type of switching device in the first power module according to the first control signal, which can improve the efficiency of the first power module, and thus can improve the efficiency of the power module device. The first control signal is a signal for controlling the first type of switching device.

[0034] After the first logic drive module receives the second control signal from the microcontroller, it can control the operation of the second type of switching device in the first power module according to the second control signal. Since the cost of the second type of switching device is relatively low, the cost of the first power module can be reduced, and thus the cost of the power module device can be reduced. The second control signal is a signal for controlling the second type of switching device.

[0035] In Figure 1 the described drive device, the drive device detects the output current of the power module in the power module device, and controls the operation of the two types of switching devices in the power module according to the comparison result between the output current and the current threshold, so as to realize the switching of the drive of the power module under different output currents of the power module, and the drive of different types of switching devices in the hybrid power module can be realized by mixing the output current of the power module. In addition, the drive of different types of switching devices in the hybrid power module can be realized by mixing the output current of the power module, the closed-loop control of the power module device can be realized, and the situation where the power module device is always operated by the same type of switching device can be avoided. Further, since the situation where the power module device is always operated by the same type of switching device is avoided, the situation where the power module device is always operated by the switching device with relatively high power consumption can be avoided, thereby optimizing the power of the power module device.

[0036] Please refer to Figure 2 , Figure 2 which is a schematic structural diagram of another drive device disclosed in the embodiment of the present application. Among them, Figure 2 the shown drive device is optimized from Figure 1 the shown drive device. As Figure 2 shown, the first logic drive module may include an upper bridge logic drive circuit and a lower bridge logic drive circuit, the first type of switching device may include a first type of upper bridge switching device and a first type of lower bridge switching device, and the second type of switching device may include a second type of upper bridge switching device and a second type of lower bridge switching device.

[0037] The upper bridge logic drive circuit is respectively connected to the microcontroller, the first type of upper bridge switching device in the first power module, and the second type of upper bridge switching device in the first power module, and the lower bridge logic drive circuit is respectively connected to the microcontroller, the first type of lower bridge switching device in the first power module, and the second type of lower bridge switching device in the first power module.

[0038] After receiving the first control signal and the second control signal from the microcontroller, the upper-bridge logic driving circuit can control the operation of the first type of upper-bridge switching devices in the first power module according to the first control signal, and can control the operation of the second type of upper-bridge switching devices in the first power module according to the second control signal.

[0039] After receiving the first control signal and the second control signal from the microcontroller, the lower-bridge logic driving circuit can control the operation of the first type of lower-bridge switching devices in the first power module according to the first control signal, and can control the operation of the second type of lower-bridge switching devices in the first power module according to the second control signal.

[0040] The upper-bridge switching devices and the lower-bridge switching devices in the power module are respectively driven by different logic driving circuits, which can avoid the situation of chaotic driving of the upper-bridge switching devices and the lower-bridge switching devices.

[0041] Please refer to Figure 3 , Figure 3 which is a schematic structural diagram of another driving device disclosed in the embodiments of the present application. Among them, Figure 3 the shown driving device is optimized from the Figure 2 shown driving device. As Figure 3 shown, the driving device may further include a first capacitor C1. One end of the first capacitor C1 is connected to the upper-bridge logic driving circuit, and the other end of the first capacitor C1 is connected to the first power supply VCC1.

[0042] As Figure 3 shown, the driving device may further include a second capacitor C2. One end of the second capacitor C2 is connected to the lower-bridge logic driving circuit, and the other end of the second capacitor C2 is connected to the third power supply VCC2.

[0043] Please refer to Figure 4 , Figure 4 which is a schematic structural diagram of another driving device disclosed in the embodiments of the present application. Among them, Figure 4 the shown driving device is optimized from the Figure 3 shown driving device. As Figure 4 shown, the upper-bridge logic driving circuit may include a first high-side logic driving unit, a first low-side logic driving unit, a first VCP (Voltage Charge Pump) unit, a first logic unit L1, a second logic unit L2, a third logic unit L3, a fourth logic unit L4, a first switching device Q1, a second switching device Q2, a third switching device Q3, and a fourth switching device Q4.

[0044] The first high-side logic driving unit is respectively connected to the first low-side logic driving unit, the microcontroller, the first end of the first logic unit L1, and the first end of the second logic unit L2. The second end of the first logic unit L1 and the second end of the second logic unit L2 are respectively connected to the first VCP unit and one end of the first capacitor C1. The third end of the first logic unit L1 is connected to the first end of the first switching device Q1, and the third end of the second logic unit L2 is connected to the first end of the second switching device Q2. The second ends of the first switching device Q1 and the second switching device Q2 are respectively connected to the first power supply VCC1. The third end of the first switching device Q1 is respectively connected to the fourth end of the first logic unit L1 and the second type of upper-bridge switching device in the first power module. The third end of the second switching device Q2 is respectively connected to the fourth end of the second logic unit L2 and the first type of upper-bridge switching device in the first power module.

[0045] The first low-side logic driving unit is respectively connected to the microcontroller, the first end of the third logic unit L3, and the first end of the fourth logic unit L4. The second end of the third logic unit L3 is connected to the first end of the third switching device Q3. The second end of the third switching device Q3 is connected to the first type of upper-bridge switching device in the first power module. The second end of the fourth logic unit L4 is connected to the first end of the fourth switching device Q4. The second end of the fourth switching device Q4 is connected to the second type of upper-bridge switching device in the first power module. The third ends of the third switching device Q3 and the fourth switching device Q4 are respectively connected to the second power supply VEE1.

[0046] The first switching device Q1, the second switching device Q2, the third switching device Q3, and the fourth switching device Q4 can all be N-type MOS transistors. The drain-source resistances of the first switching device Q1 and the fourth switching device Q4 are the same, that is, the resistances between the source and the drain can be the same. The drain-source resistances of the second switching device Q2 and the third switching device Q3 can be the same. Therefore, the current-carrying capacities of the first switching device Q1 and the fourth switching device Q4 are the same, that is, the driving capabilities of the first switching device Q1 and the fourth switching device Q4 are the same. Similarly, the current-carrying capacities of the second switching device Q2 and the third switching device Q3 are the same, that is, the driving capabilities of the second switching device Q2 and the third switching device Q3 are the same.

[0047] The first control signal and the second control signal can include the first PWM (Pulse Width Modulation) signal and the second PWM signal. The first PWM signal is different from the second PWM signal. Exemplarily, the first PWM signal and the second PWM signal are complementary PWM signals, and there can be a dead zone between the first PWM signal and the second PWM signal.

[0048] The output paths of the first switching device Q1, the second switching device Q2, the third switching device Q3, and the fourth switching device Q4 are relatively flexible and can be controlled by an 8-bit digital selection signal, which can control the high-side logic driving unit and the low-side logic driving unit simultaneously. The control truth table of the first switching device Q1, the second switching device Q2, the third switching device Q3, and the fourth switching device Q4 can be as shown in Table 1:

[0049]

[0050]

[0051] Table 1 Truth Table of Switching Devices in the High-Bridge Logic Driving Circuit

[0052] Therefore, the first control signal may further include a first digital selection signal. The second control signal may further include a second digital selection signal. The first digital selection signal is a digital selection signal for selecting to drive the first type of switching device to operate. The second digital selection signal is a digital selection signal for selecting to drive the second type of switching device to operate. Exemplarily, the first digital selection signal may be 100, i.e., 5 in the above truth table, and the second digital selection signal may be 001, i.e., 2 in the above truth table.

[0053] It should be understood that the first digital selection signal and the second digital selection signal may also be other values in the above truth table. Correspondingly, the hardware structure of the driving device needs to be modified. Exemplarily, the connection manner between the first switching device Q1, the second switching device Q2, the third switching device Q3, the fourth switching device Q4 and the first type of high-bridge switching device and the second type of high-bridge switching device in the first power module can be modified.

[0054] The above truth table is stored in the first high-side logic driving unit. After receiving the first control signal, the first high-side logic driving unit can send a first PWM signal to the second logic unit L2 according to the first digital selection signal, that is, send a first PWM signal to the second logic unit L2 according to the first digital selection signal and the above truth table. After receiving the second control signal, the first high-side logic driving unit can send a first PWM signal to the first logic unit L1 according to the second digital selection signal, that is, send a first PWM signal to the first logic unit L1 according to the second digital selection signal and the above truth table.

[0055] After receiving the first PWM signal, the first logic unit L1 can control the operating state of the first switching device Q1 according to the first PWM signal, that is, when the first PWM signal is at a high level, control the first switching device Q1 to conduct, and when the first PWM signal is at a low level, control the first switching device Q1 to turn off.

[0056] After the second logic unit L2 receives the first PWM signal, it can control the operating state of the second switching device Q2 according to the first PWM signal.

[0057] The above truth table is stored in the first low-side logic driving unit. After the first low-side logic driving unit receives the first control signal, it can send the second PWM signal to the third logic unit L3 according to the first digital selection signal, that is, send the second PWM signal to the third logic unit L3 according to the first digital selection signal and the above truth table. After the first low-side logic driving unit receives the second control signal, it can send the second PWM signal to the fourth logic unit L4 according to the second digital selection signal.

[0058] After the third logic unit L3 receives the second PWM signal, it can control the operating state of the third switching device Q3 according to the second PWM signal.

[0059] After the fourth logic unit L4 receives the second PWM signal, it can control the operating state of the fourth switching device Q4 according to the second PWM signal.

[0060] The first VCP unit can drive the first switching device Q1 through the first logic unit L1 according to the first power supply VCC1, and can drive the second switching device Q2 through the second logic unit L2 according to the first power supply VCC1.

[0061] The first VCP unit is used in cooperation with the first capacitor C1 for the function of a high-side charge pump. The first VCP unit is used in cooperation with the first capacitor C1, and can boost or buck the first power supply VCC1. After that, it can provide the boosted or bucked first power supply VCC1 to the first switching device Q1 through the first logic unit L1, and can provide the boosted or bucked first power supply VCC1 to the second switching device Q2 through the second logic unit L2.

[0062] Among them, both the first switching device Q1 and the fourth switching device Q4 can drive the second type of upper-bridge switching device in the first power module to work. Since the first PWM signal and the second PWM signal are complementary, that is, when the first PWM signal is at a low level, the second PWM signal is at a high level, and when the first PWM signal is at a high level, the second PWM signal is at a low level. Therefore, the first switching device Q1 and the fourth switching device Q4 will not conduct simultaneously, so that the second type of upper-bridge switching device in the first power module can be driven by the first switching device Q1 or the fourth switching device Q4 at the same time, and the situation that the second type of upper-bridge switching device in the first power module cannot be driven due to the simultaneous conduction of the first switching device Q1 and the fourth switching device Q4 can be avoided.

[0063] Similarly, both the second switching device Q2 and the third switching device Q3 can drive the first type of high-side switching devices in the first power module. Since the first PWM signal and the second PWM signal are complementary, the second switching device Q2 and the third switching device Q3 will not conduct simultaneously. Thus, it can be realized that the first type of high-side switching devices in the first power module are driven by the second switching device Q2 or the third switching device Q3 at the same time, which can avoid the situation that the first type of high-side switching devices in the first power module cannot be driven due to the simultaneous conduction of the second switching device Q2 and the third switching device Q3.

[0064] As Figure 4 shown, the lower-bridge logic driving circuit may include a second high-side logic driving unit, a second low-side logic driving unit, a second VCP unit, a fifth logic unit L5, a sixth logic unit L6, a seventh logic unit L7, an eighth logic unit L8, a fifth switching device Q5, a sixth switching device Q6, a seventh switching device Q7, and an eighth switching device Q8.

[0065] The second high-side logic driving unit is respectively connected to the second low-side logic driving unit, the microcontroller, the first end of the fifth logic unit L5, and the first end of the sixth logic unit L6. The second ends of the fifth logic unit L5 and the sixth logic unit L6 are respectively connected to the second VCP unit and one end of the second capacitor C2. The third end of the fifth logic unit L5 is connected to the first end of the fifth switching device Q5. The third end of the sixth logic unit L6 is connected to the first end of the sixth switching device Q6. The second ends of the fifth switching device Q5 and the sixth switching device Q6 are respectively connected to the third power supply VCC2. The third end of the fifth switching device Q5 is respectively connected to the fourth end of the fifth logic unit L5 and the second type of low-side switching devices in the first power module. The third end of the sixth switching device Q6 is respectively connected to the fourth end of the sixth logic unit L6 and the first type of low-side switching devices in the first power module.

[0066] The second low-side logic driving unit is respectively connected to the microcontroller, the first end of the seventh logic unit L7, and the first end of the eighth logic unit L8. The second end of the seventh logic unit L7 is connected to the first end of the seventh switching device Q7. The second end of the seventh switching device Q7 is connected to the first type of low-side switching devices in the first power module. The second end of the eighth logic unit L8 is connected to the first end of the eighth switching device Q8. The second end of the eighth switching device Q8 is connected to the second type of low-side switching devices in the first power module. The third ends of the seventh switching device Q7 and the eighth switching device Q8 are respectively connected to the fourth power supply VEE2.

[0067] The fifth switching device Q5, the sixth switching device Q6, the seventh switching device Q7, and the eighth switching device Q8 can also all be N-type MOS transistors. The drain-source resistances of the fifth switching device Q5 and the eighth switching device Q8 are the same, and the drain-source resistances of the sixth switching device Q6 and the seventh switching device Q7 can be the same. Therefore, the current capabilities of the fifth switching device Q5 and the eighth switching device Q8 are the same, that is, the driving capabilities of the fifth switching device Q5 and the eighth switching device Q8 are the same. Similarly, the current capabilities of the sixth switching device Q6 and the seventh switching device Q7 are the same, that is, the driving capabilities of the sixth switching device Q6 and the seventh switching device Q7 are the same.

[0068] Similarly, the output paths of the fifth switching device Q5, the sixth switching device Q6, the seventh switching device Q7, and the eighth switching device Q8 are relatively flexible and can be controlled by an 8-bit digital selection signal, which can control the high-side logic driving unit and the low-side logic driving unit simultaneously. The control truth table of the fifth switching device Q5, the sixth switching device Q6, the seventh switching device Q7, and the eighth switching device Q8 can be as shown in Table 2:

[0069]

[0070]

[0071] Table 2 Truth table of switching devices in the lower-bridge logic driving circuit

[0072] The second high-side logic driving unit stores the truth table corresponding to Table 2. After receiving the second control signal, the second high-side logic driving unit can send the first PWM signal to the fifth logic unit L5 according to the second digital selection signal. After receiving the first control signal, the second high-side logic driving unit can send the first PWM signal to the sixth logic unit L6 according to the first digital selection signal.

[0073] After receiving the first PWM signal, the fifth logic unit L5 can control the operating state of the fifth switching device Q5 according to the first PWM signal.

[0074] After receiving the first PWM signal, the sixth logic unit L6 can control the operating state of the sixth switching device Q6 according to the first PWM signal.

[0075] The second low-side logic driving unit stores the truth table corresponding to Table 2. After receiving the first control signal, the second low-side logic driving unit can send the second PWM signal to the seventh logic unit L7 according to the first digital selection signal. After receiving the second control signal, the second low-side logic driving unit can send the second PWM signal to the eighth logic unit L8 according to the second digital selection signal;

[0076] After receiving the second PWM signal, the seventh logic unit can control the operating state of the seventh switching device Q7 according to the second PWM signal.

[0077] After receiving the second PWM signal, the eighth logic unit L8 can control the operating state of the eighth switching device Q8 according to the second PWM signal.

[0078] The second VCP unit can drive the fifth switching device Q5 through the fifth logic unit L5 according to the third power supply VCC2, and can drive the sixth switching device Q6 through the sixth logic unit L6 according to the third power supply VCC2.

[0079] The second VCP unit is used in cooperation with the second capacitor C2 for the function of a high-side charge pump. The second VCP unit and the second capacitor C2 are used in cooperation to step up or step down the third power supply VCC2. After that, the stepped-up or stepped-down third power supply VCC2 can be provided to the fifth switching device Q5 through the fifth logic unit L5, and the stepped-up or stepped-down third power supply VCC2 can be provided to the sixth switching device Q6 through the sixth logic unit L6.

[0080] Among them, both the fifth switching device Q5 and the eighth switching device Q8 can drive the second type of lower-bridge switching device in the first power module. Since the first PWM signal and the second PWM signal are complementary, the fifth switching device Q5 and the eighth switching device Q8 will not conduct simultaneously. Thus, it can be realized that the second type of lower-bridge switching device in the first power module is driven by the fifth switching device Q5 or the eighth switching device Q8 at the same time, and the situation where the second type of lower-bridge switching device in the first power module cannot be driven due to the simultaneous conduction of the fifth switching device Q5 and the eighth switching device Q8 can be avoided.

[0081] Similarly, both the sixth switching device Q6 and the seventh switching device Q7 can drive the first type of lower-bridge switching device in the first power module. Since the first PWM signal and the second PWM signal are complementary, the sixth switching device Q6 and the seventh switching device Q7 will not conduct simultaneously. Thus, it can be realized that the first type of lower-bridge switching device in the first power module is driven by the sixth switching device Q6 or the seventh switching device Q7 at the same time, and the situation where the first type of lower-bridge switching device in the first power module cannot be driven due to the simultaneous conduction of the sixth switching device Q6 and the seventh switching device Q7 can be avoided.

[0082] In some embodiments, the upper-bridge logic driving circuit may further include a first Serial Peripheral Interface (SPI), and the lower-bridge logic driving circuit may further include a second SPI.

[0083] Between the first SPI and the second SPI, and between the microcontroller and the first SPI and the second SPI, they are connected in a daisy-chain manner respectively.

[0084] The first control signal and the second control signal may further include a first SPI signal. The first SPI signal is a communication signal transmitted between the microcontroller and the upper bridge logic driving circuit in a daisy-chain manner, and is used for the communication of write operations and read operations between the microcontroller and the upper bridge logic driving circuit, and may include information such as fault diagnosis information, temperature information, and data verification information.

[0085] Similarly, the first control signal and the second control signal may further include a second SPI signal. The second SPI signal is a communication signal transmitted between the microcontroller and the lower bridge logic driving circuit in a daisy-chain manner, and is used for the communication of write operations and read operations between the microcontroller and the lower bridge logic driving circuit, and may include information such as fault diagnosis information, temperature information, and data verification information.

[0086] Please refer to Figure 5 , Figure 5 which is a schematic structural diagram of another driving device disclosed in the embodiments of the present application. Among them, Figure 5 the shown driving device is obtained by optimizing the Figure 4 shown driving device. As Figure 5 shown, the driving device may further include a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, and an eighth resistor R8;

[0087] Both ends of the first resistor R1 are respectively connected to the third terminal of the first switching device Q1 and the second type of upper bridge switching device, both ends of the second resistor R2 are respectively connected to the third terminal of the second switching device Q2 and the first type of upper bridge switching device, both ends of the third resistor R3 are respectively connected to the second terminal of the third switching device Q3 and the first type of upper bridge switching device, both ends of the fourth resistor R4 are respectively connected to the second terminal of the fourth switching device Q4 and the second type of upper bridge switching device, both ends of the fifth resistor R5 are respectively connected to the third terminal of the fifth switching device Q5 and the second type of lower bridge switching device, both ends of the sixth resistor R6 are respectively connected to the third terminal of the sixth switching device Q6 and the first type of lower bridge switching device, both ends of the seventh resistor R7 are respectively connected to the second terminal of the seventh switching device Q7 and the first type of lower bridge switching device, and both ends of the eighth resistor R8 are respectively connected to the second terminal of the eighth switching device Q8 and the second type of lower bridge switching device.

[0088] Since the resistance value of the first resistor R1 is different, the driving rate of the first switching device Q1 for driving the second type of upper bridge switching device is different. Therefore, the driving rate of the first switching device Q1 for driving the second type of upper bridge switching device can be controlled by the first resistor R1.

[0089] When the resistance value of the second resistor R2 is different, the driving speed of the first type of upper-bridge switching device driven by the second switching device Q2 is different. Therefore, the driving speed of the first type of upper-bridge switching device driven by the second switching device Q2 can be controlled by the second resistor R2.

[0090] When the resistance value of the third resistor R3 is different, the driving speed of the first type of upper-bridge switching device driven by the third switching device Q3 is different. Therefore, the driving speed of the first type of upper-bridge switching device driven by the third switching device Q3 can be controlled by the third resistor R3.

[0091] When the resistance value of the fourth resistor R4 is different, the driving speed of the second type of upper-bridge switching device driven by the fourth switching device Q4 is different. Therefore, the driving speed of the second type of upper-bridge switching device driven by the fourth switching device Q4 can be controlled by the fourth resistor R4.

[0092] Similarly, the driving speed of the second type of lower-bridge switching device driven by the fifth switching device Q5 can be controlled by the fifth resistor R5, the driving speed of the first type of lower-bridge switching device driven by the sixth switching device Q6 can be controlled by the sixth resistor R6, the driving speed of the first type of lower-bridge switching device driven by the seventh switching device Q7 can be controlled by the seventh resistor R7, and the driving speed of the second type of lower-bridge switching device driven by the eighth switching device Q8 can be controlled by the eighth resistor R8.

[0093] Please refer to Figure 6 , Figure 6 which is a schematic structural diagram of a power module system disclosed in an embodiment of the present application. As Figure 6 shown, the power module system may include a driving device and a power module device.

[0094] Among them, the detailed description of the driving device can refer to the above description.

[0095] The power module device can be connected to the motor to drive the motor.

[0096] The power module device may include a plurality of power modules. A plurality of logic driving modules correspond to the plurality of power modules one by one. The power module includes a first type of switching device and a second type of switching device. The power consumption of the first type of switching device is less than that of the second type of switching device.

[0097] Each power module may include a first type of switching device SM1 and a second type of switching device SM2. The first type of switching device SM1 may include a first type of upper-bridge switching device G1 and a first type of lower-bridge switching device G2. The first type of upper-bridge switching device G1 and the first type of lower-bridge switching device G2 may be SIC MOS transistors or GaN MOS transistors.

[0098] The second type of switching device SM2 may include a second type of upper-bridge switching device G3 and a second type of lower-bridge switching device G4. AsFigure 6 As shown, the second - type upper - bridge switching device G3 and the second - type lower - bridge switching device G4 each include three IGBTs.

[0099] The first - type switching device SM1 and the second - type switching device SM2 are driven in a way that the upper - bridge and lower - bridge are driven separately. The first - type upper - bridge switching device G1 and the second - type upper - bridge switching device G3 are driven by the upper - bridge logic driving circuit, and the first - type lower - bridge switching device G2 and the second - type lower - bridge switching device G4 are driven by the lower - bridge logic driving circuit.

[0100] The three IGBTs in the second - type upper - bridge switching device G3 are driven by the same driving signal in the upper - bridge logic driving circuit, and the three IGBTs in the second - type lower - bridge switching device G4 are driven by the same driving signal in the lower - bridge logic driving circuit.

[0101] The first - type switching device SM1 and the second - type switching device SM2 form a single - phase inverter module, that is, a single - phase power module. This single - phase power module outputs current under the drive of the driving device. When the output current of the single - phase power module is less than or equal to the current threshold, the driving device uses a PWM signal to drive the first - type switching device SM1 to work; when the output current of the single - phase power module is greater than the current threshold, the driving device uses a PWM signal to drive the second - type switching device SM2 to work.

[0102] In some embodiments, the power - module device may include an inverter. The inverter can be a three - phase inverter or an inverter with more than three phases. Exemplarily, please refer to Figure 7 , Figure 7 which is a schematic structural diagram of another power - module system disclosed in the embodiments of the present application. As shown in Figure 7 , when the inverter is a three - phase inverter, the current - detection module includes three current - detection units, and the power - module device may include three power modules. Each current - detection unit can detect the output current output by one power module. The inverter can be a single - bridge inverter or a double - bridge inverter.

[0103] It can be seen that the power - module system detects the output current of the power module, and controls the operation of different types of switching devices in the power - module device according to the comparison result between the set current threshold and the output current, which can realize the PWM - signal control drive switching under different output - current - capacity states, avoid the continuous operation of the same - type switching devices, and optimize the power of the power - module system.

[0104] The above - mentioned driving device or power - module system can be applied to all electronic devices equipped with a motor.

[0105] Exemplarily, the above - mentioned driving device or power - module system can be applied in an electric vehicle, that is, the electric vehicle can include the above - mentioned driving device or power - module system.

[0106] It should be understood that the connections in this application can be understood as electrical connections.

[0107] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, rather than to limit them; although this application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A driving device, characterized in that: It includes a current detection module, a microcontroller and a plurality of logic drive modules; The microcontroller is respectively connected to the current detection module and the multiple logic drive modules, the multiple logic drive modules are respectively connected to the power module device, the power module device includes multiple power modules, the multiple logic drive modules correspond to the multiple power modules one by one, the power module includes a first type of switch device and a second type of switch device, the current detection module is arranged at the output end of the power module device, and the power consumption of the first type of switch device is less than the power consumption of the second type of switch device; The current detection module is used to detect the output current of a first power module to obtain a first output current, and the first power module is any power module among the multiple power modules; The microcontroller is configured to send a first control signal to a first logic driving module when the first output current is less than or equal to a current threshold, and send a second control signal to the first logic driving module when the first output current is greater than the current threshold, wherein the first logic driving module is a logic driving module corresponding to the first power module among the multiple logic driving modules; The first logic driving module is used to control the operation of the first type of switching devices in the first power module according to the first control signal, and to control the operation of the second type of switching devices in the first power module according to the second control signal.

2. The driving device according to claim 1, characterized in that: The first logic driving module includes an upper bridge logic driving circuit and a lower bridge logic driving circuit, the first type of switch devices includes a first type of upper bridge switch devices and a first type of lower bridge switch devices, and the second type of switch devices includes a second type of upper bridge switch devices and a second type of lower bridge switch devices; The upper bridge logic driving circuit is respectively connected to the microcontroller, the first type of upper bridge switch device in the first power module, and the second type of upper bridge switch device in the first power module, and the lower bridge logic driving circuit is respectively connected to the microcontroller, the first type of lower bridge switch device in the first power module, and the second type of lower bridge switch device in the first power module; The upper bridge logic driving circuit is used to control the operation of the first type of upper bridge switch device in the first power module according to the first control signal, and to control the operation of the second type of upper bridge switch device in the first power module according to the second control signal; The lower bridge logic driving circuit is used to control the operation of the first type of lower bridge switch device in the first power module according to the first control signal, and to control the operation of the second type of lower bridge switch device in the first power module according to the second control signal.

3. The driving device according to claim 2, characterized in that: The driving device further includes a first capacitor, one end of which is connected to the upper bridge logic driving circuit, and the other end of which is connected to a first power supply.

4. The driving device according to claim 3, characterized in that: The upper bridge logic driving circuit includes a first high-side logic driving unit, a first low-side logic driving unit, a first VCP unit, a first logic unit, a second logic unit, a third logic unit, a fourth logic unit, a first switching device, a second switching device, a third switching device and a fourth switching device; The first high-side logic driving unit is respectively connected to the first low-side logic driving unit, the microcontroller, the first end of the first logic unit and the first end of the second logic unit, the second end of the first logic unit and the second end of the second logic unit are respectively connected to the first VCP unit and one end of the first capacitor, the third end of the first logic unit is connected to the first end of the first switch device, the third end of the second logic unit is connected to the first end of the second switch device, the second end of the first switch device and the second end of the second switch device are respectively connected to the first power supply, the third end of the first switch device is respectively connected to the fourth end of the first logic unit and the second type of upper bridge switch device in the first power module, and the third end of the second switch device is respectively connected to the fourth end of the second logic unit and the first type of upper bridge switch device in the first power module; The first low-side logic driving unit is respectively connected to the microcontroller, the first end of the third logic unit and the first end of the fourth logic unit, the second end of the third logic unit is connected to the first end of the third switch device, the second end of the third switch device is connected to the first type of upper bridge switch device in the first power module, the second end of the fourth logic unit is connected to the first end of the fourth switch device, the second end of the fourth switch device is connected to the second type of upper bridge switch device in the first power module, and the third end of the third switch device and the third end of the fourth switch device are respectively connected to the second power supply; The first control signal and the second control signal include a first PWM signal and a second PWM signal, the first control signal further includes a first digital selection signal, and the second control signal further includes a second digital selection signal; The first VCP unit is used to drive the first switching device through the first logic unit according to the first power supply, and drive the second switching device through the second logic unit according to the first power supply; The first high-side logic driving unit is configured to send the first PWM signal to the first logic unit according to the second digital selection signal, and to send the first PWM signal to the second logic unit according to the first digital selection signal; The first logic unit is used to control the working state of the first switching device according to the first PWM signal; The second logic unit is used to control the working state of the second switching device according to the first PWM signal; The first low-side logic driving unit is configured to send the second PWM signal to the third logic unit according to the first digital selection signal, and send the second PWM signal to the fourth logic unit according to the second digital selection signal; The third logic unit is used to control the working state of the third switching device according to the second PWM signal; The fourth logic unit is used to control the working state of the fourth switching device according to the second PWM signal.

5. The driving device according to claim 4, characterized in that: The driving device further includes a second capacitor, one end of the second capacitor is connected to the lower bridge logic driving circuit, and the other end of the second capacitor is connected to a third power supply.

6. The driving device according to claim 5, characterized in that: The lower bridge logic driving circuit includes a second high-side logic driving unit, a second low-side logic driving unit, a second VCP unit, a fifth logic unit, a sixth logic unit, a seventh logic unit, an eighth logic unit, a fifth switching device, a sixth switching device, a seventh switching device and an eighth switching device; The second high-side logic driving unit is respectively connected to the second low-side logic driving unit, the microcontroller, the first end of the fifth logic unit and the first end of the sixth logic unit, the second end of the fifth logic unit and the second end of the sixth logic unit are respectively connected to the second VCP unit and one end of the second capacitor, the third end of the fifth logic unit is connected to the first end of the fifth switch device, the third end of the sixth logic unit is connected to the first end of the sixth switch device, the second end of the fifth switch device and the second end of the sixth switch device are respectively connected to the third power supply, the third end of the fifth switch device is respectively connected to the fourth end of the fifth logic unit and the second type of lower bridge switch device in the first power module, and the third end of the sixth switch device is respectively connected to the fourth end of the sixth logic unit and the first type of lower bridge switch device in the first power module; The second low-side logic driving unit is respectively connected to the microcontroller, the first end of the seventh logic unit and the first end of the eighth logic unit, the second end of the seventh logic unit is connected to the first end of the seventh switch device, the second end of the seventh switch device is connected to the first type of lower bridge switch device in the first power module, the second end of the eighth logic unit is connected to the first end of the eighth switch device, the second end of the eighth switch device is connected to the second type of lower bridge switch device in the first power module, and the third end of the seventh switch device and the third end of the eighth switch device are respectively connected to a fourth power supply; The second VCP unit is used to drive the fifth switch device through the fifth logic unit according to the third power supply, and drive the sixth switch device through the sixth logic unit according to the third power supply; The second high-side logic driving unit is configured to send the first PWM signal to the fifth logic unit according to the second digital selection signal, and send the first PWM signal to the sixth logic unit according to the first digital selection signal; The fifth logic unit is used to control the working state of the fifth switch device according to the first PWM signal; The sixth logic unit is used to control the working state of the sixth switch device according to the first PWM signal; The second low-side logic driving unit is used to send the second PWM signal to the seventh logic unit according to the first digital selection signal, and send the second PWM signal to the eighth logic unit according to the second digital selection signal; The seventh logic unit is used to control the working state of the seventh switching device according to the second PWM signal; The eighth logic unit is used to control the working state of the eighth switching device according to the second PWM signal.

7. The driving device according to claim 6, characterized in that: The driving device further includes a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor and an eighth resistor; The two ends of the first resistor are respectively connected to the third end of the first switching device and the second type of upper bridge switching device, the two ends of the second resistor are respectively connected to the third end of the second switching device and the first type of upper bridge switching device, the two ends of the third resistor are respectively connected to the second end of the third switching device and the first type of upper bridge switching device, the two ends of the fourth resistor are respectively connected to the second end of the fourth switching device and the second type of upper bridge switching device, the two ends of the fifth resistor are respectively connected to the third end of the fifth switching device and the second type of lower bridge switching device, the two ends of the sixth resistor are respectively connected to the third end of the sixth switching device and the first type of lower bridge switching device, the two ends of the seventh resistor are respectively connected to the second end of the seventh switching device and the first type of lower bridge switching device, and the two ends of the eighth resistor are respectively connected to the second end of the eighth switching device and the second type of lower bridge switching device.

8. The driving device according to any one of claims 1 to 4, characterized in that: The first type of switching devices are silicon carbide (SIC) metal oxide semiconductor (MOS) tubes or gallium nitride (GaN) MOS tubes, and the second type of switching devices are insulated gate bipolar transistors (IGBT).

9. A power module system, characterized in that: The invention comprises a driving device and a power module device as claimed in any one of claims 1 to 8, wherein the power module device comprises a plurality of power modules, the plurality of logic driving modules correspond one to one to the plurality of power modules, the power module comprises a first type of switching device and a second type of switching device, and the power consumption of the first type of switching device is less than the power consumption of the second type of switching device; The power module device is used to drive the motor.

10. An electric vehicle, characterized in that: It comprises a driving device as described in any one of claims 1 to 8, or a power module system as described in claim 9.

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