Crystal growth crucible heat preservation structure and crystal growth equipment
By designing a cladding insulation structure on the crystal growth crucible, the side, top and bottom insulation materials are used to reduce temperature fluctuations, the problem of instability of the crucible temperature during the crystal growth process is solved, the crystal growth quality is improved and the production cost is reduced.
Patent Information
- Application Number
- CN202422082269.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-27
- Publication Date
- 2025-06-03
- Estimated Expiration
- 2034-08-27
AI Technical Summary
During the crystal growth process, the graphite crucible reacts sensitively to the heating of the graphite heater, resulting in large fluctuations in the crucible temperature and unable to maintain the target temperature, affecting the crystal growth quality.
A thermal insulation structure of a crystal crucible is designed, including side, top and bottom insulation materials. By covering the crystal crucible, a direct insulation layer is formed to reduce the sensitivity of temperature changes.
By reducing the temperature fluctuation of the crystal growth crucible, its temperature stability is improved, thereby improving the crystal growth quality. Due to the removable design of the insulation material, the production cost is low and the disassembly is convenient.
Smart Images
Figure CN222935582U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of crystal growth equipment, and in particular, to a heat preservation structure for a crystal growth crucible and a crystal growth equipment. Background Art
[0002] Please refer to Figure 1 , in the existing silicon carbide crystal growth equipment, generally, a graphite heater 02, a graphite heat preservation felt 03 and a vacuum chamber 04 are sequentially arranged on the periphery of a graphite crucible 01, and the thermal field of the graphite crucible 01 is controlled by the graphite heater 02, the graphite heat preservation felt 03 and the vacuum chamber 04.
[0003] However, through the research of the inventor, it is found that during the crystal growth process, the graphite crucible 01 is sensitive to the heating effect of the graphite heater 02, resulting in large fluctuations in the temperature of the graphite crucible 01 and unable to maintain at the target temperature value, which affects the crystal growth quality. Summary of the Utility Model
[0004] The purpose of the utility model is to provide a heat preservation structure for a crystal growth crucible and a crystal growth equipment, which can reduce the temperature fluctuation of the crystal growth crucible, make the temperature stability of the crystal growth crucible better, and improve the crystal growth quality.
[0005] The embodiments of the utility model are implemented as follows:
[0006] In a first aspect, the utility model provides a heat preservation structure for a crystal growth crucible, which includes a side heat preservation material, a top heat preservation material and a bottom heat preservation material;
[0007] The side heat preservation material is annular and is used for covering the outer peripheral surface of the crystal growth crucible. The height of the side heat preservation material is greater than the height of the crystal growth crucible. The top of the side heat preservation material and the top surface of the crystal growth crucible enclose a first accommodating cavity, and the top heat preservation material is detachably filled in the first accommodating cavity; the bottom heat preservation material is used for being arranged at the bottom of the crystal growth crucible; temperature measuring channels are provided at the central positions of the top heat preservation material and the bottom heat preservation material.
[0008] In an optional embodiment, the side heat preservation material includes a plurality of annular heat preservation materials spliced in sequence along the vertical direction.
[0009] In an optional embodiment, the connection surface between two adjacent annular heat preservation materials up and down is in a stepped shape.
[0010] In an optional embodiment, the top heat preservation material is integrally formed or formed by stacking a plurality of heat preservation plates.
[0011] In an alternative embodiment, the crystal growth crucible heat insulation structure further includes a bottom support structure disposed below the side heat insulation material and the crystal growth crucible. The bottom support structure is used to support the side heat insulation material and the crystal growth crucible. The bottom support structure has a second accommodation cavity, and the bottom heat insulation material is disposed in the second accommodation cavity.
[0012] In an alternative embodiment, the bottom support structure includes a connecting seat, an intermediate ring, and a top plate sequentially arranged from bottom to top. A circular groove is provided on the top surface of the top plate, and the crystal growth crucible is disposed in the circular groove.
[0013] In an alternative embodiment, the connecting surface between the connecting seat and the intermediate ring and the connecting surface between the intermediate ring and the top plate are both stepped.
[0014] In an alternative embodiment, the bottom surface of the top plate, the inner side surface of the intermediate ring, and the top surface of the connecting seat enclose the second accommodation cavity.
[0015] In a second aspect, the present utility model provides a crystal growth device, which includes a heater, a crystal growth crucible, and the above-mentioned crystal growth crucible heat insulation structure. The crystal growth crucible heat insulation structure is wrapped around the crystal growth crucible, and the heater is disposed on the periphery of the crystal growth crucible heat insulation structure.
[0016] The beneficial effects of the crystal growth crucible heat insulation structure and the crystal growth device provided by the embodiments of the present utility model include:
[0017] 1. By designing the crystal growth crucible heat insulation structure to be directly wrapped around the crystal growth crucible. Specifically, the side heat insulation material is wrapped around the outer peripheral surface of the crystal growth crucible, the top heat insulation material is disposed on the top of the crystal growth crucible, and the bottom heat insulation material is disposed at the bottom of the crystal growth crucible. In this way, whether the crystal growth crucible dissipates heat or is heated by the heater, it has to pass through the crystal growth crucible heat insulation structure, thereby reducing the sensitivity of the temperature change of the crystal growth crucible, reducing the temperature fluctuation of the crystal growth crucible, making the temperature stability of the crystal growth crucible better, and improving the crystal growth quality.
[0018] 2. The side heat insulation material, the top heat insulation material, and the bottom heat insulation material are in a detachable combination form. Not only can they be manufactured separately and then combined, with low production costs, but also they are convenient to disassemble, install, and replace in the crystal growth device. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the following will briefly introduce the drawings required to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present utility model, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.
[0020] Figure 1It is a schematic diagram of the full-section structure of an existing silicon carbide crystal growth equipment;
[0021] Figure 2 It is a schematic diagram of the full-section structure in the transverse direction of the crystal growth equipment provided by the embodiment of the present invention;
[0022] Figure 3 It is Figure 2 a schematic diagram of the external structure of the crystal growth crucible heat preservation structure in
[0023] Figure 4 a schematic diagram of the full-section structure in the longitudinal direction of the crystal growth crucible heat preservation structure.
[0024] Icon: 01 - graphite crucible; 02 - graphite heater; 03 - graphite heat preservation felt; 04 - vacuum cavity; 1 - heater; 2 - crystal growth crucible; 3 - crystal growth crucible heat preservation structure; 31 - side heat preservation material; 32 - top heat preservation material; 33 - bottom heat preservation material; 34 - bottom support structure; 341 - connecting seat; 342 - intermediate ring; 343 - top plate; 35 - temperature measurement channel. Specific embodiments
[0025] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some but not all of the embodiments of the present invention. Usually, the components of the embodiments of the present invention described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.
[0026] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.
[0027] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.
[0028] In the description of the present utility model, it should be noted that the orientation or positional relationship indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the present utility model is usually placed during use. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present utility model. In addition, terms such as "first", "second", "third", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.
[0029] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging vertically, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.
[0030] In the description of the present utility model, it should also be noted that unless otherwise clearly specified and limited, the terms "set", "installed", "connected", "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific situations.
[0031] Please refer to Figure 2 , this embodiment provides a crystal growth device. The crystal growth device includes a heater 1, a crystal growth crucible 2, and a crystal growth crucible heat insulation structure 3. The crystal growth crucible heat insulation structure 3 is wrapped around the crystal growth crucible, and the heater 1 is arranged on the periphery of the crystal growth crucible heat insulation structure 3.
[0032] Of course, the crystal growth device also includes other conventional components, such as a graphite heat insulation felt (not shown in the figure) arranged on the periphery of the heater 1 and a vacuum chamber (not shown in the figure) arranged on the periphery of the graphite heat insulation felt. In this embodiment, the main technical concept is as follows: First, the crystal growth crucible 2, the crystal growth crucible heat insulation structure 3, and the heater 1 are arranged in sequence from the inside to the outside; Second, the structural form of the crystal growth crucible heat insulation structure 3. Other conventional components in the crystal growth device are not specifically limited in this embodiment.
[0033] The crystal growth equipment provided in this embodiment designs the crystal growth crucible heat preservation structure 3 to directly wrap around the crystal growth crucible 2. Specifically, the side heat preservation material 31 wraps around the outer peripheral surface of the crystal growth crucible 2, the top heat preservation material 32 is arranged on the top of the crystal growth crucible 2, and the bottom heat preservation material 33 is arranged at the bottom of the crystal growth crucible 2. In this way, whether the crystal growth crucible 2 dissipates heat or is heated by the heater 1, it has to pass through the crystal growth crucible heat preservation structure 3, thereby reducing the sensitivity of the temperature change of the crystal growth crucible 2, reducing the temperature fluctuation of the crystal growth crucible 2, making the temperature stability of the crystal growth crucible 2 better, and improving the crystal growth quality.
[0034] Please refer to Figure 3 and Figure 4 The crystal growth crucible heat preservation structure 3 includes a side heat preservation material 31, a top heat preservation material 32, a bottom heat preservation material 33 and a bottom support structure 34.
[0035] Among them, the side heat preservation material 31, the top heat preservation material 32, and the bottom heat preservation material 33 can be made of carbon materials, carbon-carbon composite materials, graphite felts or graphite papers with a porous structure.
[0036] The side heat preservation material 31 is annular and is used to wrap around the outer peripheral surface of the crystal growth crucible 2. The height of the side heat preservation material 31 is greater than the height of the crystal growth crucible 2. The top of the side heat preservation material 31 and the top surface of the crystal growth crucible 2 enclose a first accommodation cavity, and the top heat preservation material 32 is detachably filled in the first accommodation cavity. The bottom support structure 34 is arranged below the side heat preservation material 31 and the crystal growth crucible 2. The bottom support structure 34 is used to support the side heat preservation material 31 and the crystal growth crucible 2. The bottom support structure 34 has a second accommodation cavity, and the bottom heat preservation material 33 is arranged in the second accommodation cavity so that the bottom heat preservation material 33 is arranged at the bottom of the crystal growth crucible 2. Temperature measurement channels 35 are provided at the central positions of the top heat preservation material 32, the bottom heat preservation material 33 and the bottom support structure 34. The temperature measurement channels 35 allow the infrared rays of the temperature measurement sensor to pass through to measure the temperature of the crystal growth crucible 2.
[0037] In this way, the side heat preservation material 31, the top heat preservation material 32 and the bottom heat preservation material 33 are in a detachable combination form, which not only can be manufactured separately and then combined, with low production costs, but also is convenient for disassembly, installation and replacement in the crystal growth equipment.
[0038] Specifically, the side heat preservation material 31 includes a plurality of annular heat preservation materials spliced in sequence along the vertical direction. In this way, not only can the side heat preservation material 31 be conveniently disassembled and installed on the crystal growth crucible 2, but also a damaged annular heat preservation material can be replaced, reducing the equipment cost.
[0039] The connecting surface between two adjacent annular thermal insulation materials above and below is stepped. Here, the stepped connecting surface means that the end faces where two adjacent annular thermal insulation materials come into contact are not flat surfaces, but stepped surfaces with height differences. In this way, heat leakage from the gap between two adjacent annular thermal insulation materials above and below can be reduced, and the thermal insulation performance of the crystal growth crucible thermal insulation structure 3 can be improved.
[0040] The top thermal insulation material 32 can be integrally formed to simplify the structural form. The top thermal insulation material 32 can also be formed by laminating multiple thermal insulation boards. Together with the side thermal insulation material 31 formed by splicing up and down, the depth of the first accommodating cavity can be flexibly adjusted, and the top thermal insulation material 32 with a suitable height can be adapted. Of course, the structural form of the bottom thermal insulation material 33 can be the same as or different from that of the top thermal insulation material 32.
[0041] The bottom support structure 34 includes a connecting seat 341, an intermediate ring 342, and a top plate 343 arranged in sequence from bottom to top. A circular groove is provided on the top surface of the top plate 343, and the crystal growth crucible 2 is arranged in the circular groove, which can improve the stability of the support of the bottom support structure 34 for the crystal growth crucible 2.
[0042] The connecting surfaces between the connecting seat 341 and the intermediate ring 342 and between the intermediate ring 342 and the top plate 343 are both stepped. In this way, the connection stability between adjacent components in the bottom support structure 34 can be improved, thereby ensuring the stability of the position of the crystal growth crucible 2.
[0043] The bottom surface of the top plate 343, the inner side surface of the intermediate ring 342, and the top surface of the connecting seat 341 enclose a second accommodating cavity, and the bottom thermal insulation material 33 is arranged in the second accommodating cavity. In this way, the bottom support structure 34 can not only fix the bottom thermal insulation material 33, but also stably support the crystal growth crucible 2. In addition, because the bottom thermal insulation material 33 is arranged in the second accommodating cavity, the heat dissipated from the bottom of the crystal growth crucible 2 through the bottom support structure 34 is reduced, so that the heat absorption or heat dissipation efficiency of the bottom and the top of the crystal growth crucible 2 can be kept as equal as possible, and the temperature stability of the crystal growth crucible 2 can be improved.
[0044] The beneficial effects of the crystal growth crucible thermal insulation structure 3 and the crystal growth equipment provided by the embodiments of the present utility model include:
[0045] 1. By designing the crystal growth crucible heat preservation structure 3 to be directly coated on the crystal growth crucible 2. Specifically, the side heat preservation material 31 is coated on the outer peripheral surface of the crystal growth crucible 2, the top heat preservation material 32 is arranged on the top of the crystal growth crucible 2, and the bottom heat preservation material 33 is arranged on the bottom of the crystal growth crucible 2. In this way, whether the crystal growth crucible 2 dissipates heat or is heated by the heater 1, it has to pass through the crystal growth crucible heat preservation structure 3, thereby reducing the sensitivity of the temperature change of the crystal growth crucible 2, reducing the temperature fluctuation of the crystal growth crucible 2, making the temperature stability of the crystal growth crucible 2 better, and improving the crystal growth quality;
[0046] 2. The side heat preservation material 31, the top heat preservation material 32 and the bottom heat preservation material 33 adopt a detachable combination form, which can not only be manufactured separately and then combined, with low production costs, but also be convenient for disassembly, installation and replacement when used in the crystal growth equipment;
[0047] 3. The overall structure design of the crystal growth crucible heat preservation structure 3 is simple and practical, which is not only convenient for disassembly and installation, but also has good heat preservation effect and support effect on the crystal growth crucible 2.
[0048] The above are only the preferred embodiments of the present invention and are not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.
Claims
1. A crystal growth crucible insulation structure, characterized in that: The crystal growth crucible insulation structure comprises a side insulation material (31), a top insulation material (32) and a bottom insulation material (33); The side heat-insulating material (31) is annular and is used to cover the outer peripheral surface of the crystal growth crucible (2); the height of the side heat-insulating material (31) is greater than the height of the crystal growth crucible (2); the top of the side heat-insulating material (31) and the top surface of the crystal growth crucible (2) form a first accommodating cavity; the top heat-insulating material (32) is detachably filled in the first accommodating cavity; the bottom heat-insulating material (33) is used to be arranged at the bottom of the crystal growth crucible (2); and temperature measuring channels (35) are provided at the center positions of the top heat-insulating material (32) and the bottom heat-insulating material (33).
2. The crystal growth crucible insulation structure according to claim 1, characterized in that: The side heat-insulating material (31) comprises a plurality of annular heat-insulating materials sequentially spliced in a vertical direction.
3. The crystal growth crucible insulation structure according to claim 2, characterized in that: The connection surface between two upper and lower adjacent annular thermal insulation materials is in a stepped shape.
4. The crystal growth crucible insulation structure according to claim 2, characterized in that: The top heat-insulating material (32) is integrally formed or formed by stacking a plurality of heat-insulating panels.
5. The crystal growth crucible insulation structure according to claim 1, characterized in that: The crystal growth crucible insulation structure further comprises a bottom support structure (34) arranged below the side insulation material (31) and the crystal growth crucible (2), the bottom support structure (34) being used to support the side insulation material (31) and the crystal growth crucible (2), the bottom support structure (34) having a second accommodating cavity, the bottom insulation material (33) being arranged in the second accommodating cavity.
6. The crystal growth crucible insulation structure according to claim 5, characterized in that: The bottom support structure (34) comprises a connecting seat (341), an intermediate ring (342) and a top plate (343) which are arranged in sequence from bottom to top; a circular groove is arranged on the top surface of the top plate (343); and the crystal growth crucible (2) is arranged in the circular groove.
7. The crystal growth crucible insulation structure according to claim 6, characterized in that: The connection surface between the connection seat (341) and the intermediate ring (342) and the connection surface between the intermediate ring (342) and the top plate (343) are both stepped.
8. The crystal growth crucible insulation structure according to claim 6, characterized in that: The bottom surface of the top plate (343), the inner side surface of the middle ring (342) and the top surface of the connecting seat (341) form the second accommodating cavity.
9. A crystal growth device, characterized in that: The crystal growth equipment comprises a heater (1), a crystal growth crucible (2) and the crystal growth crucible insulation structure according to claim 1, wherein the crystal growth crucible insulation structure is coated on the crystal growth crucible (2), and the heater (1) is arranged on the periphery of the crystal growth crucible insulation structure.