Transparent or semitransparent wafer surface defect detection device and system

Abstract

The embodiment of the utility model provides a transparent or semitransparent wafer surface defect detection device and system, and belongs to the technical field of wafer surface defect detection. The detection device comprises an illumination assembly, an oblique measurement assembly and a normal measurement assembly, and the illumination assembly is arranged on one side of a to-be-detected area and used for providing laser for a wafer arranged in the to-be-detected area; the slant measurement assembly is arranged on the other side of the to-be-detected area and used for receiving and detecting slant emitted light of the wafer, the slant measurement assembly is provided with a first pinhole, and the first pinhole is used for filtering optical noise interference of the wafer in space; the normal measurement assembly is arranged right above the to-be-detected area and used for receiving and detecting normal scattered light of the wafer, the normal measurement assembly is provided with a second pinhole, and the second pinhole is used for filtering optical noise interference of the wafer in space.

Description

Technical Field

[0001] The utility model relates to the technical field of wafer surface defect detection, and particularly relates to a device and a system for detecting defects on the surface of a transparent or semi-transparent wafer. Background Art

[0002] Silicon carbide (SiC) is a typical representative of the third-generation semiconductor materials, and is also one of the wide-bandgap semiconductor materials with the most mature crystal growth technology and device manufacturing level and the widest application at present. Compared with silicon-based devices, SiC devices have higher breakdown voltage and lower loss, and have good application prospects in the fields of electric vehicles, green energy and smart grid.

[0003] With the development of semiconductor device technology, the integration degree of chips is getting higher and higher, and defect detection has become an indispensable means to improve the semiconductor yield. The traditional silicon wafer surface defect detection is carried out by emitting laser and collecting signals. Since the silicon carbide wafer is a semi-transparent material, if measured with traditional equipment, the signal receiver will receive optical noise from positions such as inside the wafer, the back surface, and the wafer chuck, which will result in the captured signal not being the correct signal on the surface. Summary of the Utility Model

[0004] The purpose of the embodiments of the utility model is to provide a device and a system for detecting defects on the surface of a transparent or semi-transparent wafer, which can solve the interference problem of optical noise from positions such as inside the transparent or semi-transparent wafer, the back surface, and the wafer chuck on the detection of surface defect signals.

[0005] To achieve the above purpose, the embodiments of the utility model provide a device for detecting defects on the surface of a transparent or semi-transparent wafer, and the detection device includes:

[0006] A lighting component, which is arranged on one side of the area to be detected and is used to provide laser for the wafer placed in the area to be detected;

[0007] An oblique measurement component, which is arranged on the other side of the area to be detected and is used to receive and detect the oblique reflected light of the wafer. The oblique measurement component is provided with a first pinhole, and the first pinhole is used to filter the optical noise interference of the wafer in space;

[0008] A normal measurement component, which is arranged directly above the area to be detected and is used to receive and detect the normal scattered light of the wafer. The normal measurement component is provided with a second pinhole, and the second pinhole is used to filter the optical noise interference of the wafer in space.

[0009] Optionally, the lighting component includes:

[0010] A laser, which is used to emit laser;

[0011] A laser beam expander, which is arranged at one end of the laser close to the wafer and is used for expanding the laser beam;

[0012] A half-wave plate, which is arranged on the side of the laser beam expander close to the wafer and is used for adjusting the laser beam with a non-preset polarization direction;

[0013] A focusing objective lens, which is arranged on the side of the half-wave plate close to the wafer and is used for focusing the laser beam.

[0014] Optionally, the centers of the laser, the laser beam expander, the half-wave plate and the focusing objective lens are collinear.

[0015] Optionally, the oblique measurement assembly includes:

[0016] A first light-receiving objective lens, which is arranged on the other side close to the wafer and is used for receiving the oblique reflected light on the surface of the wafer;

[0017] A first pinhole, which is arranged on the side of the first light-receiving objective lens away from the wafer and is used for filtering the optical noise interference of the wafer in space;

[0018] A first collimating mirror, which is arranged on the side of the first pinhole away from the wafer and is used for collimating the laser beam passing through the first pinhole into parallel light;

[0019] A quarter-wave plate, which is arranged on the side of the first collimating mirror away from the wafer and is used for modulating the polarization state of the parallel light;

[0020] A polarization beam splitter, which is arranged on the side of the quarter-wave plate away from the wafer and is used for separating the parallel light according to the polarization direction;

[0021] A focusing lens, which is arranged on the side of the polarization beam splitter away from the wafer and is used for focusing the separated parallel light to form a focused beam;

[0022] A detector, which is arranged on the side of the focusing lens away from the wafer and is used for detecting the focused beam.

[0023] Optionally, the focusing lens includes:

[0024] A first focusing lens, which is arranged on the side of the polarization beam splitter away from the wafer;

[0025] A second focusing lens, which is arranged on the side of the polarization beam splitter close to the normal measurement assembly; the detector includes:

[0026] A first detector, which is arranged on the side of the first focusing lens away from the wafer;

[0027] The second detector is disposed on a surface of the second focusing lens close to the normal measurement component.

[0028] Optionally, the normal measurement component includes:

[0029] The second light collecting objective lens is disposed on a surface close to the vertical direction of the wafer for collecting scattered light and fluorescence;

[0030] The second pinhole is disposed on a surface of the second light collecting objective lens away from the wafer for filtering optical noise interference of the wafer in space;

[0031] The second collimating mirror is disposed on a surface of the second pinhole away from the wafer for collimating the laser passing through the second pinhole into parallel light;

[0032] The third detector is disposed on a surface of the second collimating mirror away from the wafer.

[0033] Optionally, the normal measurement component includes a filtering rotating wheel disposed between the second collimating mirror and the third detector, and the filtering rotating wheel includes a plurality of circular grooves.

[0034] On the other hand, the present invention provides a transparent or semi-transparent wafer surface defect detection system, which includes the detection device and the scanning motion component as described above. The scanning motion component is disposed below the area to be detected and is used to drive the wafer to move to complete the scanning of the wafer.

[0035] Through the above technical solutions, the illumination component provides a laser focusing spot to the detection area; the oblique measurement component is used to detect the surface topography, film layer and reflection signal of the wafer; the normal measurement component is used to detect the surface scattering and fluorescence signals of the wafer; the scanning motion component cooperates with the optical mechanism to complete the scanning of the entire wafer surface for defect detection. Both the oblique measurement component and the normal measurement component adopt a light collecting design with a finite conjugate objective lens, and the conjugate points of the finite conjugate objective lens are set at the first pinhole and the second pinhole for spatial filtering, so as to filter the interference of optical noise at positions such as the inside, back surface of the wafer, and wafer chuck on the optical signal. The detection device and system can also be used for defect detection of particles, scratches, pits, contamination, stacking faults, dislocations, etc. on the wafer.

[0036] Other features and advantages of the embodiments of the present invention will be described in detail in the subsequent specific implementation part. Description of the Drawings

[0037] The drawings are used to provide a further understanding of the embodiments of the present invention, and constitute a part of the specification. Together with the following specific implementation, they are used to explain the embodiments of the present invention, but do not constitute a limitation to the embodiments of the present invention. In the drawings:

[0038] Figure 1 It is a schematic diagram of a transparent or semi - transparent wafer surface defect detection device and system according to an embodiment of the present utility model;

[0039] Figure 2 It is a spiral scanning path of a transparent or semi - transparent wafer surface defect detection device and system according to an embodiment of the present utility model.

[0040] Description of reference numerals

[0041] 1. Lighting component 2. Oblique measurement component

[0042] 3. Normal measurement component 4. Wafer

[0043] 5. First pinhole 6. Second pinhole

[0044] 21. First light - collecting objective lens 22. First collimating mirror

[0045] 23. Quarter - wave plate 24. Polarizing beam splitter

[0046] 25. Focusing lens 26. Detector

[0047] 251. First focusing lens 252. Second focusing lens

[0048] 261. First detector 262. Second detector

[0049] 31. Second light - collecting objective lens 32. Second collimating mirror

[0050] 33. Third detector 34. Filter wheel

[0051] 7. Scanning motion component 41. Detection point

[0052] 11. Laser 12. Laser beam expander

[0053] 13. Half - wave plate 14. Focusing objective lens

[0054] 71. XY position stage 72. Rotary stage

[0055] 73. Wafer adsorption device Detailed implementation manners

[0056] The following will detail the specific implementation manners of the embodiments of the present utility model with reference to the accompanying drawings. It should be understood that the specific implementation manners described herein are only for explaining and interpreting the embodiments of the present utility model, and are not used to limit the embodiments of the present utility model.

[0057] In the embodiments of the present application, unless otherwise stated, the orientation terms such as "upper, lower, top, bottom" are generally used in the direction shown in the drawings or in the vertical, perpendicular or gravitational directions to describe the relative positional relationship of each component.

[0058] In addition, if the descriptions such as "first", "second", etc. are involved in the embodiments of the present application, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions between the various embodiments may be combined with each other, but it must be based on the fact that those skilled in the art can implement it. When the combination of technical solutions results in contradictions or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection required by the present application.

[0059] As Figure 1 shown, Figure 1 is a schematic diagram of a transparent or semi-transparent wafer surface defect detection device and system according to an embodiment of the present invention. In this Figure 1 detection device includes: an illumination component 1, an oblique measurement component 2 and a normal measurement component 3. Among them, the illumination component 1 is arranged on one side of the area to be detected and is used to provide laser to the wafer 4 placed in the area to be detected; the oblique measurement component 2 is arranged on the other side of the area to be detected and is used to receive and detect the obliquely emitted light of the wafer 4. The oblique measurement component 2 is provided with a first pinhole 5, and the first pinhole 5 is used to filter the optical noise interference of the wafer 4 in space; the normal measurement component 3 is arranged directly above the area to be detected and is used to receive and detect the normally scattered light of the wafer 4. The normal measurement component 3 is provided with a second pinhole 6, and the second pinhole 6 is used to filter the optical noise interference of the wafer 4 in space. In the wafer defect detection device in the prior art, measurement is performed by emitting laser and collecting signals. During the measurement process of traditional equipment, the signal receiver will receive optical noise from positions such as inside the wafer, on the back surface, and the wafer chuck, which will cause the captured signal not to be the correct signal on the wafer surface and greatly reduce the sensitivity of wafer defect detection. In an embodiment of the present invention, both the oblique measurement component 2 and the normal measurement component 3 adopt a finite conjugate objective lens light collection design, and the conjugate points of the finite conjugate objective lens are set at the first pinhole 5 and the second pinhole 6 for spatial filtering, so as to filter the interference of optical noise from positions such as inside the wafer, on the back surface, and the wafer chuck on the optical signal.

[0060] In this embodiment, the structure of the illumination component 1 can be various structures known to those skilled in the art. In an embodiment of the present invention, the illumination component 1 includes: a laser 11, a laser beam expander 12, a half-wave plate 13, and a focusing objective lens 14. The laser 11 is used to emit laser light; the laser beam expander 12 is disposed on the side of the laser 11 close to the wafer, and is used to perform beam expansion operation on the laser light; the half-wave plate 13 is disposed on the side of the laser beam expander 12 close to the wafer 4, and is used to adjust the laser light with a non-preset polarization direction; the focusing objective lens 14 is disposed on the side of the half-wave plate 13 close to the wafer 4, and is used to perform focusing operation on the laser light. And the centers of the laser 11, the laser beam expander 12, the half-wave plate 13, and the focusing objective lens 14 are collinear.

[0061] The laser 11 is a polarized light source with any wavelength. Considering that a light source with a short wavelength has higher defect detection sensitivity, in an embodiment of the present invention, the laser 11 selects a polarized light source with a wavelength of 405 mm. The laser beam expander 12 can expand the beam diameter and reduce the divergence angle, so that a smaller focused spot can be obtained after passing through the focusing objective lens 14, thereby improving the defect detection sensitivity. At the same time, the energy density of the expanded laser light is reduced, and the energy damage threshold requirement for the selection of the wave plate is reduced.

[0062] In this embodiment, the structure of the oblique measurement component 2 can be various structures known to those skilled in the art. In an embodiment of the present invention, the oblique measurement component 2 includes: a first light collecting objective lens 21, a first pinhole 5, a first collimator 22, a quarter-wave plate 23, a polarization beam splitter 24, a focusing lens 25, and a detector 26. Among them, the first light collecting objective lens 21 is disposed on the other side close to the wafer 4, and is used to receive the oblique reflected light on the surface of the wafer 4. The first light collecting objective lens 21 has a finite conjugate, and this conjugate point is aligned with the center of the first pinhole 5; the first pinhole 5 is disposed on the side of the first light collecting objective lens 21 away from the wafer 4, and is used to filter the non-focal plane optical noise interference of the wafer. The oblique reflected light passes through the first pinhole 5 to filter the non-focal plane optical noise interference at positions such as inside the wafer 4, on the surface, and the wafer chuck, thereby improving the defect detection sensitivity of the wafer surface; the first collimator 22 is disposed on the side of the first pinhole 5 away from the wafer 4, and is used to collimate the laser light passing through the first pinhole 5 into parallel light; the quarter-wave plate 23 is disposed on the side of the first collimator 22 away from the wafer 4, and is used to modulate the polarization state of the parallel light; the polarization beam splitter 24 is disposed on the side of the quarter-wave plate 23 away from the wafer 4, and is used to separate the parallel light according to the polarization direction. The polarization beam splitter 24 separates the P-polarized light and the S-polarized light; the focusing lens 25 is disposed on the side of the polarization beam splitter 24 away from the wafer 4, and is used to focus the separated parallel light; the detector 26 is disposed on the side of the focusing lens 25 away from the wafer 4, and is used to detect the parallel light.

[0063] In this embodiment, the focusing lens 25 includes a first focusing lens 251 and a second focusing lens 252. Among them, the first focusing lens 251 is disposed on the side of the polarization beam splitter 24 away from the wafer 4; the second focusing lens 252 is disposed on the side of the polarization beam splitter 24 close to the normal measurement component 3; the detector 26 includes a first detector 261 and a second detector 262. Among them, the first detector 261 is disposed on the side of the first focusing lens 251 away from the wafer 4; the second detector 262 is disposed on the side of the second focusing lens 252 close to the normal measurement component 3. The polarization beam splitter 24 separates the P-polarized light and the S-polarized light. The transmitted P-polarized light is focused onto the first detector 261 through the first focusing lens 251; the reflected S-polarized light is focused onto the second detector 262 through the second focusing lens 252. In an embodiment of the present invention, the polarization beam splitter 24 can be a polarization beam splitting cube, a Wollaston prism or other polarization beam splitters; the first detector 261 is a photodiode, and the second detector 262 is a quadrant detector, a position sensitive detector or some other suitable detector.

[0064] In this embodiment, for the structure of the normal measurement component 3, there are various types known to those skilled in the art. In an embodiment of the present invention, the normal measurement component 3 includes a second light collecting objective lens 31, a second pinhole 6, a second collimating mirror 32 and a third detector 33. Among them, the second light collecting objective lens 31 is disposed on the side close to the wafer 4 in the vertical direction, and is used to collect the scattered light and fluorescence in a large spatial solid angle. The second light collecting objective lens 31 has a large numerical aperture to improve the sensitivity of defect detection; the second light collecting objective lens 31 can be a reflective objective lens, a refractive objective lens or some other suitable objective lens. The second light collecting objective lens 31 has a finite conjugate, and its conjugate image point is aligned with the center of the second pinhole 6; the second pinhole 6 is disposed on the side of the second light collecting objective lens 31 away from the wafer 4, and is used to filter the optical noise interference of the wafer 4 in space. The laser passes through the second pinhole 6 to filter the non-focal plane optical noise interference at positions such as the inside, the back surface of the wafer 4, and the wafer chuck, thereby improving the sensitivity of surface defect detection of the wafer 4. The second collimating mirror 32 is disposed on the side of the second pinhole 6 away from the wafer 4, and is used to collimate the laser passing through the second pinhole 6 into parallel light; the third detector 33 is disposed on the side of the second collimating mirror 32 away from the wafer 4, and the diameter of the parallel light is smaller than the photosensitive surface diameter of the third detector 33. For the third detector 33, there are various types known to those skilled in the art. In an embodiment of the present invention, the third detector 33 can be a photomultiplier tube, a PIN photodetector, an avalanche photodiode or some other suitable unit detector.

[0065] In this embodiment, the structure of the normal measurement component 3 can be various known to those skilled in the art. In an embodiment of the present invention, the normal measurement component 3 further includes a filtering rotating wheel 34. The filtering rotating wheel 34 is arranged between the second collimating mirror 32 and the third detector 33. The filtering rotating wheel 34 includes a plurality of circular grooves. The parallel light collimated by the second collimating mirror 32 passes through one of the circular grooves for filtering. The filtering channels can be configured according to the defect detection requirements. In an embodiment of the present invention, the plurality of circular grooves are respectively: a 405nm narrow-band filtering rotating wheel, a 420nm narrow-band filtering rotating wheel, a 455nm narrow-band filtering rotating wheel, a 480nm narrow-band filtering rotating wheel, a 500nm narrow-band filtering rotating wheel, and a 650nm long-pass filtering channel. Among them, the 405nm narrow-band filtering rotating wheel channel is used to measure the scattering signal; the 420nm narrow-band filtering rotating wheel channel is used to measure single stacking fault defects; the 455nm narrow-band filtering rotating wheel channel is used to measure quadruple stacking fault defects; the 480nm narrow-band filtering rotating wheel channel is used to measure triple stacking fault defects; the 500nm narrow-band filtering rotating wheel channel is used to measure double stacking fault defects; the 650nm long-pass filtering channel is used to measure basal plane dislocation defects.

[0066] In addition, the present invention also includes a transparent or semi-transparent wafer surface defect detection system. The detection system includes the detection device described above and a scanning motion component 7. The scanning motion component 7 is arranged below the area to be detected and is used to drive the wafer 4 to move to complete the scanning of the wafer 4.

[0067] The structure of the scanning motion component 7 can be various known to those skilled in the art. In an embodiment of the present invention, the scanning motion component 7 includes: an XY position stage 71, a rotating stage 72, and a wafer adsorption device 73. Among them, the wafer adsorption device 73 is used to adsorb the wafer 4 and is arranged below the wafer 4; the upper surface of the rotating stage 72 is connected to the wafer adsorption device 73; the XY position stage 71 is connected to the lower surface of the rotating stage 72. The scanning motion component 7 drives the wafer to rotate and translate, using a spiral trajectory or a serpentine trajectory to complete the scanning of the detection points 41 of the wafer 4 on the entire surface of the wafer 4.

[0068] As Figure 2 shown, Figure 2It is the spiral scanning path of a transparent or semi-transparent wafer surface defect detection device and system according to an embodiment of the present invention. In the case of measuring the scattered signal, the direction of the half-wave plate 13 is controlled, and the laser is adjusted to be incident in the P polarization, S polarization or 45° polarization direction. At the same time, the filter wheel 34 is adjusted to the 405nm narrowband filter wheel channel, and the radiation scattered by different polarized lights on the surface of the wafer 4 is obtained through the third detector 33 to detect defects such as particles, scratches, and pits. In the case of measuring the fluorescence signal, the filter wheel is adjusted to the 420nm narrowband filter wheel channel, 455nm narrowband filter wheel channel, 480nm narrowband filter wheel channel, 500nm narrowband filter wheel channel or 650nm long-pass filter channel, and single stacking fault defects, quadruple stacking fault defects, triple stacking fault defects, double stacking fault defects or basal plane dislocation defects are measured through the detector 25. In the case of measuring the film layer signal, the direction of the half-wave plate 13 is controlled to adjust the laser to be incident in the 45° polarization direction, the fast axis angle of the quarter-wave plate 23 is set to 22.5°, the first detector 261 is used to receive the signal power, and the second detector 262 is used to detect the signal power and the image position.

[0069] Through the above technical solutions, the illumination component 1 provides a laser focusing spot to the detection area; the oblique measurement component 2 is used to detect the surface topography, film layer and reflection signal of the wafer; the normal measurement component 3 is used to detect the scattered and fluorescence signals on the surface of the wafer; the scanning motion component 7 cooperates with the optical mechanism to complete the scanning of the entire wafer surface for defect detection. Both the oblique measurement component 2 and the normal measurement component 3 adopt a light-receiving design with a finite conjugate objective lens. The conjugate points of the finite conjugate objective lens are set at the first pinhole 5 and the second pinhole 6 for spatial filtering, so as to filter the interference of optical noise from the inside, back surface, wafer chuck, etc. of the wafer on the optical signal. The detection device and system can also be used for defect detection of particles, scratches, pits, contamination, stacking faults, dislocations, etc. on the wafer 6.

[0070] The optional embodiments of the present invention have been described in detail above in conjunction with the accompanying drawings. However, the embodiments of the present invention are not limited to the specific details in the above embodiments. Within the technical concept scope of the embodiments of the present invention, various simple modifications can be made to the technical solutions of the embodiments of the present invention, and these simple modifications all fall within the protection scope of the embodiments of the present invention.

[0071] In addition, it should be noted that in the various specific technical features described in the above specific embodiments, they can be combined in any suitable manner without conflict. To avoid unnecessary repetition, the embodiments of the present invention will not separately describe various possible combination methods.

[0072] In addition, any combination can be made among various different embodiments of the present utility model embodiment, as long as it does not violate the idea of the present utility model embodiment, and it should equally be regarded as the content disclosed by the present utility model embodiment.

Claims

1. A transparent or semi-transparent wafer surface defect detection device, characterized in that: The detection device comprises: An illumination assembly, disposed at one side of the area to be inspected, and used to provide laser light to the wafer placed in the area to be inspected; An oblique measurement component is arranged at the other side of the area to be detected, and is used to receive and detect the oblique reflected light of the wafer. The oblique measurement component is provided with a first pinhole, and the first pinhole is used to filter the optical noise interference of the wafer in space; The normal measurement component is arranged just above the area to be detected, and is used to receive and detect the normal scattered light of the wafer. The normal measurement component is provided with a second pinhole, and the second pinhole is used to filter the optical noise interference of the wafer in space.

2. The detection device according to claim 1, characterized in that: The lighting assembly comprises: Laser, used for emitting laser light; A laser beam expander is arranged at one end of the laser close to the wafer and is used to expand the laser beam; A half wave plate, disposed on a side of the laser beam expander close to the wafer, for adjusting the laser light in a non-preset polarization direction; A focusing objective lens is arranged on a side of the half wave plate close to the wafer and is used for focusing the laser.

3. The detection device according to claim 2, characterized in that: The centers of the laser, the laser beam expander, the half wave plate and the focusing objective lens are collinear.

4. The detection device according to claim 2, characterized in that: The oblique measurement assembly comprises: A first light-collecting objective lens is disposed on the other side close to the wafer and is used to receive oblique reflected light from the surface of the wafer; A first pinhole is provided on a side of the first light-collecting objective lens away from the wafer, and is used to filter optical noise interference of the wafer in space; A first collimator lens, disposed on a side of the first pinhole away from the wafer, and used for collimating the laser light passing through the first pinhole into parallel light; A quarter wave plate, arranged on a side of the first collimator away from the wafer, for modulating the polarization state of the parallel light; A polarization beam splitter, disposed on a side of the quarter wave plate away from the wafer, for separating the parallel light according to polarization direction; A focusing lens, disposed on a side of the polarization beam splitter away from the wafer, for focusing the separated parallel light to form a focused light beam; The detector is arranged on a side of the focusing lens away from the wafer and is used to detect the focused light beam.

5. The detection device according to claim 4, characterized in that: The focusing lens comprises: A first focusing lens is arranged on a side of the polarization beam splitter away from the wafer; The second focusing lens is arranged on a side of the polarization beam splitter close to the normal measurement component; the detector comprises: A first detector is arranged on a side of the first focusing lens away from the wafer; The second detector is arranged on a side of the second focusing lens close to the normal measurement component.

6. The detection device according to claim 1, characterized in that: The normal measurement component comprises: A second light-collecting objective lens is disposed on a side close to the vertical direction of the wafer and is used to collect scattered light and fluorescence; A second pinhole is provided on a side of the second light-collecting objective lens away from the wafer, and is used to filter the optical noise interference of the wafer in space; A second collimator lens is disposed on a side of the second pinhole away from the wafer, and is used to collimate the laser light passing through the second pinhole into parallel light; The third detector is arranged on a side of the second collimating mirror away from the wafer.

7. The detection device according to claim 6, characterized in that: The normal measurement component includes a filter wheel, which is arranged between the second collimating mirror and the third detector, and includes a plurality of circular grooves.

8. A transparent or semi-transparent wafer surface defect detection system, characterized in that: It comprises the detection device and scanning motion component as described in any one of claims 1 to 7, wherein the scanning motion component is arranged below the area to be detected and is used to drive the wafer to move so as to complete the scanning of the wafer.

Images