Cavity structure for deposition process
By designing a cavity structure containing a layer of magnetic material in the deposition process of wafer shielded gate trench products, the problem of wafer edge peeling is solved and the effect of improving product yield is achieved.
Patent Information
- Application Number
- CN202421702934.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-17
- Publication Date
- 2025-06-06
- Estimated Expiration
- 2034-07-17
AI Technical Summary
In the aluminum-copper layer deposition process of wafer shielded gate trench products, the wafer edge is prone to peeling, resulting in a decrease in product yield.
A cavity structure for the deposition process is designed, including a base and a wafer fixing ring. The base is covered with the first magnetic material layer facing the wafer surface, and the contact point of the wafer fixing ring is covered with the second magnetic material layer facing the wafer surface. The magnetic poles formed by the two are the same. Using the principle of magnetic homogeneity repulsion, a repulsive force exists between the wafer fixing ring and the base, which acts as a buffering function and reduces the impact force on the edge of the wafer.
By introducing the cavity structure of the magnetic material layer in the deposition process, the occurrence of wafer edge peeling is effectively reduced and the product yield is improved.
Smart Images
Figure CN222948445U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of semiconductors, in particular to a cavity structure used in a deposition process. Background Art
[0002] Due to the problem of warpage, the wafer shielded-gate trench (SGT) product is very prone to wafer edge chipping during the aluminum-copper layer deposition process. How to provide a chamber structure for the deposition process that can reduce the occurrence of wafer edge chipping and improve the product yield is an urgent problem to be solved in the industry. Utility Model Content
[0003] The technical problem to be solved by the utility model is to provide a cavity structure for a deposition process, which can reduce the occurrence of wafer edge peeling.
[0004] In order to solve the above problems, the utility model provides a chamber structure for a deposition process, including: a base, the base is used to support a wafer, at least a portion of the surface of the base facing the wafer is covered with a first magnetic material layer; a wafer fixing ring, the inner wall of the wafer fixing ring has a plurality of contact points, the contact points are used to crimp the edge of the wafer to fix the wafer to the base, the surface of the contact points facing the wafer is covered with a second magnetic material layer; the magnetic poles formed by the first magnetic material layer and the second magnetic material layer are the same.
[0005] In some embodiments, a slot is provided between the inner wall and the outer wall of the wafer fixing ring; the cavity structure further includes a baffle plate, which is disposed outside the outer wall of the wafer fixing ring and has an extension portion extending and snap-connected to the slot.
[0006] In some embodiments, the cavity structure further includes a lifting mechanism, and the lifting mechanism can control the lifting of the base.
[0007] In some embodiments, a vertical projection of the contact point on the base is located within the first magnetic material layer.
[0008] In some embodiments, the entire surface of the base facing the wafer is covered with the first magnetic material layer.
[0009] In some embodiments, an annular area at the edge of the surface of the base facing the wafer covers the first magnetic material layer.
[0010] In some embodiments, the first magnetic material layer is covered on a discontinuous region at an edge of a surface of the base facing the wafer.
[0011] In some embodiments, the materials of the first magnetic material layer and the second magnetic material layer are nano-magnetic metal materials.
[0012] In some embodiments, the magnetic material spraying amount of the first magnetic material layer and the second magnetic material layer can cause a repulsive force to exist between the wafer fixing ring and the base.
[0013] In some embodiments, the plurality of contact points are evenly distributed along a circular ring on the inner wall of the wafer fixing ring.
[0014] In the above technical solution, a base for carrying a wafer and a wafer fixing ring for fixing the wafer are provided in a chamber structure used for a deposition process, a first magnetic material layer is covered on at least a portion of the surface of the base facing the wafer, a plurality of contact points are provided on the inner wall of the wafer fixing ring, the contact points are used to crimp the edge of the wafer to fix the wafer to the base, a second magnetic material layer is covered on the surface of the wafer facing the contact points, the magnetic poles formed by the first magnetic material layer and the second magnetic material layer are the same, and the principle of magnetic repulsion is utilized to create a certain repulsive force between the wafer fixing ring and the base, thereby buffering the wafer during the deposition process, avoiding a large impact force on the edge of the wafer, and reducing the occurrence of wafer edge peeling.
[0015] It should be understood that the above general description and the detailed description below are only exemplary and explanatory and cannot limit the present invention. The techniques, methods and devices known to ordinary technicians in the relevant field may not be discussed in detail, but in appropriate cases, the techniques, methods and devices should be considered as part of the authorization specification. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments of the utility model will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0017] Figure 1 It is a schematic diagram of a chamber structure for a deposition process provided by the first embodiment of the utility model;
[0018] Figure 2A It is a schematic diagram of the top view of the wafer fixing ring provided in the first embodiment of the utility model;
[0019] Figure 2B It is a bottom view structural schematic diagram of a wafer fixing ring provided by the first embodiment of the utility model;
[0020] Figure 3 It is a schematic diagram of the top view of the base provided in the first embodiment of the utility model;
[0021] Figure 4 It is a schematic diagram of the top structure of the base provided by the second embodiment of the utility model. DETAILED DESCRIPTION
[0022] The technical solutions in the embodiments of the utility model will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of them. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0023] Wafer shielding grid groove products are prone to edge peeling. When analyzing the location of edge peeling of wafer shielding grid groove products, it was found that the location of wafer edge peeling coincided with the contact point of the wafer fixing ring in the aluminum-copper deposition chamber, that is, when the wafer is placed on the base and rises with the base, the contact point of the wafer and the wafer fixing ring comes into contact. If the force is too large during contact, there is a certain probability that the wafer edge will peel off. Therefore, the present application provides a new chamber structure for a deposition process to solve the above problems.
[0024] Figure 1 Schematic diagram of the chamber structure for the deposition process provided by the first embodiment of the utility model. Figure 1 As shown, the chamber structure 10 for the deposition process includes: a base 101 and a wafer fixing ring 102. The base 101 is used to carry a wafer 11, and at least a portion of the surface of the base 101 facing the wafer 11 is covered with a first magnetic material layer; the inner wall of the wafer fixing ring 102 has a plurality of contact points 1021, and the contact points 1021 are used to press the edge of the wafer 11 to fix the wafer 11 to the base 101, and the surface of the contact points 1021 facing the wafer 11 is covered with a second magnetic material layer.
[0025] The chamber structure 10 also includes a lifting mechanism 104, and the lifting mechanism 104 can control the lifting and lowering of the base 101. In this embodiment, the base 101 includes a base 1011 and a support shaft 1012, and the base 1011 can move along the support shaft 1012, and the lifting mechanism 104 can control the lifting and lowering of the base 1011 along the support shaft 1012. When the wafer 11 is placed on the upper surface of the base 1011 and the surface to be deposited of the wafer 11 is facing the target 105, the height of the lifting mechanism 104 is adjusted, so that the base 1011 moves and is fixed along the support shaft 1012, and then the wafer 11 is fixed to the base 101 through the joint action of the base 1011 and the wafer fixing ring 102.
[0026] In this embodiment, a slot 1022 is provided between the inner wall and the outer wall of the wafer fixing ring 102; the cavity structure 10 further includes a baffle 103, which is placed outside the outer wall of the wafer fixing ring 102 and has an extension portion 1031 extending and engaging with the slot 1022. The baffle 103 surrounds the base 101, and the slot 1022 and the extension portion 1031 define the distance between the baffle 103 and the wafer.
[0027] Please refer to Figure 2A and Figure 2B , Figure 2A 1 is a schematic diagram of a top view of a wafer fixing ring provided in the first embodiment of the utility model. Figure 2B It is a bottom view structural schematic diagram of a wafer fixing ring provided by the first embodiment of the utility model.
[0028] like Figure 2A As shown, a plurality of contact points 1021 are evenly distributed along a circular ring on the inner wall of the wafer fixing ring 102. The edge of the wafer 11 is pressed by the contact points 1021 to fix the wafer 11 to the base 101, and the force on the wafer 11 is evenly applied to maintain the stability of the wafer 11. In this embodiment, six contact points 1021 extend from the inner wall of the wafer fixing ring 102. In another embodiment, eight contact points 1021 extend from the inner wall of the wafer fixing ring 102. In this embodiment, the shape of the contact points 1021 is rectangular. In some embodiments, the shape of the contact points 1021 is triangular.
[0029] Figure 2B The bottom view of the wafer fixing ring 102 shown in FIG. Figure 1 The wafer fixing ring 102 faces the surface of the wafer 11. Figure 2BAs shown, the inner wall of the wafer fixing ring 102 has a plurality of contact points 1021, and the surface of the contact points 1021 facing the wafer 11 is covered with a second magnetic material layer 106. The material of the second magnetic material layer 106 is a nano-magnetic metal material. Specifically, the second magnetic material layer 106 can be formed by spraying a nano-magnetic metal material. In this embodiment, the nano-magnetic metal material is one of aluminum, iron, and boron. After magnetization, the exposed surface of the second magnetic material layer 106 forms an N pole. In some embodiments, after magnetization, the exposed surface of the second magnetic material layer 106 forms an S pole.
[0030] Figure 3 It is a schematic diagram of the top structure of the base provided by the first embodiment of the utility model. Figure 3 The top view of the base 101 shown in FIG. Figure 1 The base 101 faces the surface of the wafer 11. In this embodiment, the base 101 includes the base 1011 and the support shaft 1012. Figure 3 As shown, at least a portion of the surface of the base 1011 facing the wafer 11 is covered with the first magnetic material layer 107 .
[0031] The material of the first magnetic material layer 107 is a nano-magnetic metal material. Specifically, the first magnetic material layer 107 can be formed by spraying the nano-magnetic metal material. In this embodiment, the nano-magnetic metal material is one of aluminum, iron, and boron, and after magnetization, the exposed surface of the first magnetic material layer 107 forms an N pole. In some embodiments, after magnetization, the exposed surface of the first magnetic material layer 107 forms an S pole.
[0032] like Figure 3 As shown, the first magnetic material layer 107 covers an annular area on the surface edge of the base 101 facing the wafer 11. In this embodiment, the base 101 includes the base 1011 and the support shaft 1012, that is, the first magnetic material layer 107 covers an annular area on the surface edge of the base 1011 facing the wafer 11. The dotted box is Figure 2A and Figure 2B The vertical projection 1021 ′ of the contact point 1021 on the base 101 .
[0033] Since the exposed surfaces of the first magnetic material layer 107 and the second magnetic material layer 106 have the same magnetic properties, according to the principle of like charges repel each other, a repulsive force is formed between the first magnetic material layer 107 and the second magnetic material layer 106. By adjusting the amount of magnetic material sprayed on the first magnetic material layer 107 and the second magnetic material layer 106, the size of the repulsive force between the wafer fixing ring 102 and the base 101 can be adjusted, so that a buffering effect can be played between the wafer fixing ring 102 and the base 101.
[0034] When the wafer 11 undergoes a subsequent deposition process in the cavity structure 10, the repulsive force can act as a buffer between the wafer fixing ring 102 and the base 101, thereby avoiding the huge impact force between the wafer fixing ring 102 and the base 101 on the wafer 11, thereby avoiding a large impact force on the wafer 11 and reducing the occurrence of edge peeling of the wafer 11.
[0035] like Figure 3 As shown, in this embodiment, the vertical projection 1021' of the contact point 1021 on the base 101 is located in the first magnetic material layer 107. That is, the vertical projection of the second magnetic material layer 106 on the base 101 is located within the region where the first magnetic material layer 107 is located, which can further make the repulsive force between the contact point 1021 and the base 101 more sufficient.
[0036] In some embodiments, a vertical projection 1021' of the contact point 1021 on the base 101 is partially located in the first magnetic material layer 107. By adjusting the position of the first magnetic material layer 107 and the amount of magnetic material sprayed on the first magnetic material layer 107 and the second magnetic material layer 106, sufficient repulsive force is generated between the contact point 1021 and the base 101, thereby avoiding a large impact force on the wafer 11 and reducing the occurrence of edge peeling of the wafer 11.
[0037] In some embodiments, the exposed surfaces of the first magnetic material layer 107 and the second magnetic material layer 106 both form S poles. According to the principle of like charges repel each other, the amount of magnetic material sprayed on the first magnetic material layer 107 and the second magnetic material layer 106 can create sufficient repulsive force between the wafer fixing ring 102 and the base 101.
[0038] Figure 4 is a schematic diagram of a top view of the base provided in the second embodiment of the utility model. The difference between this embodiment and the first embodiment is that the first magnetic material layer on the base is arranged differently, and the cavity structure is different from the first embodiment. Figure 1The top view of the wafer fixing ring is the same as Figure 2A Similarly, the bottom view of the wafer fixing ring is similar to Figure 2B same.
[0039] like Figure 4 As shown, the base 201 includes a base 2011 and a support shaft (not shown), and the first magnetic material layer 207 is covered in a discontinuous area on the surface edge of the base 201 facing the wafer 11, and the dotted line frame is Figure 2A and Figure 2B The vertical projection 1021' of the contact point 1021 on the base 201. In this embodiment, the first magnetic material layer 207 is evenly distributed on the edge of the surface of the base 2011 facing the wafer 11, and by adjusting the spraying amount of the first magnetic material layer 207 and the second magnetic material layer 106, a repulsive force exists between the wafer fixing ring 102 and the base 201.
[0040] In some embodiments, the entire surface area of the base facing the wafer 11 is covered with the first magnetic material layer, so that the repulsive force between the wafer fixing ring and the base is greater.
[0041] In the above technical solution, a base for carrying a wafer and a wafer fixing ring for fixing the wafer are provided in a chamber structure used for a deposition process, a first magnetic material layer is covered on at least a portion of the surface of the base facing the wafer, a plurality of contact points are provided on the inner wall of the wafer fixing ring, the contact points are used to crimp the edge of the wafer to fix the wafer to the base, a second magnetic material layer is covered on the surface of the wafer facing the contact points, the magnetic poles formed by the first magnetic material layer and the second magnetic material layer are the same, and the principle of magnetic repulsion is utilized to create a certain repulsive force between the wafer fixing ring and the base, thereby buffering the wafer during the deposition process, avoiding a large impact force on the edge of the wafer, and reducing the occurrence of wafer edge peeling.
[0042] It should be noted that, in this document, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion. The various embodiments in this specification are described in a related manner, and the same and similar parts between the various embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.
[0043] The above is only a preferred embodiment of the utility model, and is not intended to limit the protection scope of the utility model. It should be pointed out that ordinary technicians in this technical field can make several improvements and modifications without departing from the principle of the utility model, and these improvements and modifications should also be regarded as the protection scope of the utility model.
Claims
1. A chamber structure for a deposition process, characterized in that: include: A base, the base is used to support the wafer, and at least a part of the surface of the base facing the wafer is covered with a first magnetic material layer; A wafer fixing ring, wherein the inner wall of the wafer fixing ring has a plurality of contact points, the contact points are used to press the edge of the wafer to fix the wafer to the base, and the surface of the contact points facing the wafer is covered with a second magnetic material layer; The magnetic poles formed by the first magnetic material layer and the second magnetic material layer are the same.
2. The chamber structure for deposition process according to claim 1, characterized in that: A clamping groove is provided between the inner wall and the outer wall of the wafer fixing ring; The cavity structure also includes a baffle, which is placed outside the outer wall of the wafer fixing ring and has an extension portion extending and clamped to the clamping groove.
3. The chamber structure for deposition process according to claim 1, characterized in that: The cavity structure also includes a lifting mechanism, and the lifting mechanism can control the lifting of the base.
4. The chamber structure for deposition process according to claim 1, characterized in that: A vertical projection of the contact point on the base is located within the first magnetic material layer.
5. The chamber structure for deposition process according to claim 1, characterized in that: The entire surface area of the base facing the wafer is covered with the first magnetic material layer.
6. The chamber structure for deposition process according to claim 1, characterized in that: An annular area on the edge of the surface of the base facing the wafer covers the first magnetic material layer.
7. The chamber structure for deposition process according to claim 1, characterized in that: The first magnetic material layer is covered on a discontinuous area on the edge of the surface of the base facing the wafer.
8. The chamber structure for deposition process according to claim 1, characterized in that: The materials of the first magnetic material layer and the second magnetic material layer are nano-magnetic metal materials.
9. The chamber structure for deposition process according to claim 1, characterized in that: The magnetic material spraying amount of the first magnetic material layer and the second magnetic material layer can enable a repulsive force to exist between the wafer fixing ring and the base.
10. The chamber structure for deposition process according to claim 1, characterized in that: The plurality of contact points are evenly distributed along a circular ring on the inner wall of the wafer fixing ring.