Gate driving voltage conversion circuit, integrated system and electronic equipment

Abstract

The utility model discloses a gate driving voltage conversion circuit, an integrated system and electronic equipment. The gate driving voltage conversion circuit comprises a power management chip, a gate driver, a SiC field effect transistor power switch module and a voltage conversion module, the output end of the power management chip is connected with the first input end of the gate driver; the output end of the gate driver is connected with the SiC field effect transistor power switch module; the SiC field effect transistor power switch module is connected with the voltage conversion module; and the output voltage of the gate driver is 15 to 20V. According to the invention, the defect of heating caused by overlarge internal resistance when the gate driving voltage of the MOS tube made of the SiC material is lower than 15V can be improved, and the stability of the circuit is improved. The circuit can be widely applied to the technical field of electronic circuits.

Description

Technical Field

[0001] The present application relates to the technical field of electronic circuits, and in particular to a gate drive voltage conversion circuit, an integrated system and an electronic device. Background Art

[0002] In the related art, in the PD charger, adapter, and LED lighting industries, the driving voltage of the existing mainstream power management chip is designed to match the MOS connection of silicon materials, and its driving voltage is 12V. The commonly used driving circuit is often that the power management chip is directly connected to the MOS tube. Although the 12V driving voltage can turn on the MOS tube of SiC material, it will make the resistance of the SiC field effect tube relatively large after it is turned on, resulting in abnormal heating of the SiC field effect tube. Therefore, there are still technical problems that need to be solved in the related art. Utility Model Content

[0003] The purpose of this application is to solve one of the technical problems existing in the prior art to at least a certain extent.

[0004] To this end, an object of an embodiment of the present application is to provide a gate drive voltage conversion circuit, an integrated system and an electronic device. This solution can improve the defect that the field effect transistor of SiC material has a large internal resistance when the gate drive is low, which causes heat generation, and improve the stability of the circuit.

[0005] In order to achieve the above-mentioned technical objectives, the technical solution adopted in the embodiments of the present application includes: a gate drive voltage conversion circuit, including: a power management chip, a gate driver, a SiC field effect tube power switch module and a voltage conversion module; the output end of the power management chip is connected to the first input end of the gate driver; the output end of the gate driver is connected to the SiC field effect tube power switch module; the SiC field effect tube power switch module is connected to the voltage conversion module; the output voltage of the gate driver is 15-18V.

[0006] In addition, a gate drive voltage conversion circuit according to the above embodiment of the utility model may also have the following additional technical features:

[0007] Furthermore, in an embodiment of the present application, the SiC field effect transistor power switch module includes a first resistor, a second resistor and a SiC field effect transistor; one end of the first resistor is connected to the output end of the gate driver, the other end of the first resistor and one end of the second resistor are connected to the gate of the SiC field effect transistor, and the drain of the SiC field effect transistor is connected to the voltage conversion module; the source of the SiC field effect transistor and the other end of the second resistor are both grounded.

[0008] Furthermore, in an embodiment of the present application, the voltage conversion module includes a first power supply, a transformer, a first diode and a first capacitor; the first power supply is connected to one end of the primary winding of the transformer, the other end of the primary winding of the transformer is connected to the drain of the SiC field effect transistor, one end of the secondary winding of the transformer is connected to the positive electrode of the first diode, one end of the first capacitor is connected to the negative electrode of the first diode, the other end of the first capacitor is connected to the other end of the secondary winding of the transformer, the other end of the first capacitor serves as the first output end of the gate drive voltage conversion circuit, and the negative electrode of the first diode serves as the second output end of the gate drive voltage conversion circuit.

[0009] Furthermore, in an embodiment of the present application, the first capacitor is an electrolytic capacitor; the positive electrode of the first capacitor is connected to the negative electrode of the first diode; the negative electrode of the first capacitor is connected to the other end of the secondary winding of the transformer, and the negative electrode of the first capacitor serves as the first output end of the gate drive voltage conversion circuit.

[0010] Further, in the embodiment of the present application, the second input terminal of the gate driver is connected to the second power supply, and the output voltage VDD of the second power supply satisfies the relationship:

[0011] VDD=V drop +V drive

[0012] Where VDD is the output voltage of the second power supply, V drop is the internal voltage drop after the gate driver is turned on, V drive is the output voltage of the gate driver, 15V≤V drive ≤20V.

[0013] Furthermore, in an embodiment of the present application, the power management chip includes a voltage input terminal; and a voltage input to the voltage input terminal is the same as an output voltage of the second power supply.

[0014] Furthermore, in the embodiment of the present application, the internal voltage drop of the gate driver after being turned on is 0.3 to 1V.

[0015] Furthermore, in the embodiment of the present application, the output voltage of the power management chip is 1.8V-14V.

[0016] On the other hand, an embodiment of the present application further provides an integrated system, comprising a gate drive voltage conversion circuit as described above.

[0017] On the other hand, an embodiment of the present application further provides an electronic device, comprising the integrated system as described above.

[0018] The advantages and benefits of the present application will be partially given in the following description, and partially become apparent from the following description, or be understood through the practice of the present application:

[0019] The present application can set a gate driver with an output voltage of 15-20V between the power management chip and the SiC field effect tube power switch module, so that the SiC field effect tube of the field effect tube startup module can start the voltage conversion module in a low on-resistance state, thereby reducing the heating of the SiC field effect tube and improving the defect of mismatch between the driving voltage output by the power management chip and the driving voltage of the SiC field effect tube, thereby improving the stability of the circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a module schematic diagram of a gate drive voltage conversion circuit in a specific embodiment of the utility model;

[0021] Figure 2 The specific circuit structure diagram of the gate drive voltage conversion circuit in a specific embodiment of the utility model. DETAILED DESCRIPTION

[0022] The embodiments of the present invention are described in detail below in conjunction with the accompanying drawings to illustrate the principles and processes of the gate drive voltage conversion circuit, integrated system and electronic device in the embodiments of the present invention.

[0023] Reference Figure 1 The present application provides a gate drive voltage conversion circuit. The gate drive voltage conversion circuit may include a power management chip 1, a gate driver 2, a SiC field effect tube power switch module 3 and a voltage conversion module 4.

[0024] The output terminal Gate of the power management chip 1 can be connected to the first input terminal IN of the gate driver 2. The output terminal OUT of the gate driver 2 can be connected to the SiC field effect tube power switch module 3. The SiC field effect tube power switch module 3 can be connected to the voltage conversion module 4. The output voltage of the gate driver 2 is 15-18V. The second input terminal of the gate driver 2 is connected to the voltage VDD, and the voltage input terminal of the power management chip 1 is connected to the voltage VCC. The voltage values ​​of VCC and VDD can be the same.

[0025] Further, refer to Figure 2 The SiC field effect tube power switch module 3 may include a first resistor R1, a second resistor R gs1 And SiC field effect transistor Q1. One end of the first resistor R1 can be connected to the output end of the gate driver 2, and the other end of the first resistor R1 and the second resistor R gs1One end of can be connected to the gate of SiC field effect transistor Q1, and the drain of SiC field effect transistor Q1 can be connected to the voltage conversion module 4. The source of SiC field effect transistor Q1 and the second resistor R gs1 The other ends are grounded.

[0026] Further, refer to Figure 2 , the voltage conversion module 4 may include a first power supply Vbulk, a transformer T1, a first diode D1 and a first capacitor EC1. The first power supply Vbulk may be connected to one end of the primary winding of the transformer T1. The other end of the primary winding of the transformer T1 may be connected to the drain of the SiC field effect transistor Q1. One end of the secondary winding of the transformer T1 may be connected to the positive electrode of the first diode D1. One end of the first capacitor EC1 may be connected to the negative electrode of the first diode D1. The other end of the first capacitor EC1 may be connected to the other end of the secondary winding of the transformer T1. The other end of the first capacitor EC1 serves as the first output end of the gate drive voltage conversion circuit, and the negative electrode of the first diode D1 serves as the second output end of the gate drive voltage conversion circuit.

[0027] Further, refer to Figure 2 The first capacitor EC1 is an electrolytic capacitor. The positive electrode of the first capacitor EC1 can be connected to the negative electrode of the first diode D1. The negative electrode of the first capacitor EC1 can be connected to the other end of the secondary winding of the transformer T1, and the negative electrode of the first capacitor EC1 serves as the first output end of the gate drive voltage conversion circuit.

[0028] Further, refer to Figure 2 , the second input terminal of the gate driver 2 can be connected to the second power supply, and the output voltage VDD of the second power supply satisfies the relationship:

[0029] VDD=V drop +V drive

[0030] Where VDD is the output voltage of the second power supply, V drop is the voltage drop after the gate driver is turned on, V driv e is the output voltage of the gate driver, 15V≤V drive ≤20V.

[0031] Further, refer to Figure 2 , the internal voltage drop of SiC field effect tube Q1 after being turned on is 0.3V-1V.

[0032] Further, refer to Figure 2 , the output voltage of the power management chip 1 is 1.8V-14V.

[0033] The specific calculation principle of this application is explained below with reference to the accompanying drawings:

[0034] SiC (Silicon Carbide) field effect transistors are the third generation of power semiconductors. They have the advantages of high voltage resistance, high frequency resistance, high temperature resistance and low internal resistance. They are widely used in automotive electric drive, charging piles, photovoltaics, energy storage, inverter and other industrial fields.

[0035] Since the drift layer impedance of SiC (silicon carbide) metal oxide field effect tube is lower than that of silicon-based metal oxide field effect tube, but the mobility of the channel part of SiC (silicon carbide) metal oxide field effect tube is relatively low, the impedance of the channel part is higher than that of silicon-based devices. Therefore, the higher the gate voltage, the lower the on-resistance can be obtained (Vgs = 20V or above, it gradually saturates). If the driving voltage Vgs = 10-15V used by general IGBTs and silicon-based metal oxide field effect tubes is used, the SiC (silicon carbide) metal oxide field effect tube will be in a state of relatively large resistance after conduction, and thus the original low on-resistance performance of SiC cannot be exerted. In order to obtain a sufficiently low on-resistance, SiC (silicon carbide) metal oxide field effect tubes can be driven with Vgs = 18V or so. When the driving voltage Vgs of SiC (silicon carbide) metal oxide field effect tubes is below 13V, it will cause a relatively large resistance and thermal runaway is prone to occur. In the PD charger, adapter, and LED lighting industries, the maximum driving voltage output by the common power management chip is 12V, which causes the PD charger, adapter and SiC MOS 18V driving voltage to not match, further limiting the application scope of SiC (silicon carbide) metal oxide field effect transistors.

[0036] The present application adds a gate driver to the power management chip and the SiC field effect tube power switch module, and the internal voltage drop of the gate driver is 0.3V. Then, an 18V voltage is connected to the second input terminal of the gate driver, and the voltage of the power management chip is input to the first input terminal of the gate driver to make the gate driver work normally, so that the output terminal OUT of the gate driver can stably output a voltage of 17.7V. The voltage of this value can turn on the SiC field effect tube while also turning on the SiC field effect tube in a low resistance state. In this state, the on-resistance of the SiC field effect tube is small, the efficiency is high and the heat generation is relatively low, so that the defect of abnormal heating caused by excessive internal resistance of the SiC (silicon carbide) metal oxide field effect tube when the gate drive voltage is lower than 15V can be improved.

[0037] In addition, an integrated system is also provided in an embodiment of the present application. The integrated system may include one or more gate drive voltage conversion circuits described in any of the above embodiments.

[0038] It should be noted that the contents of the above-mentioned gate drive voltage conversion circuit embodiment are all applicable to the present integrated system embodiment. The functions specifically implemented by the present integrated system embodiment are the same as those of the above-mentioned gate drive voltage conversion circuit embodiment, and the beneficial effects achieved are also the same as those achieved by the above-mentioned gate drive voltage conversion circuit embodiment.

[0039] In addition, an electronic device is provided in an embodiment of the present application, which may include one or more integrated systems described in any of the above embodiments.

[0040] It should be noted that the contents of the above-mentioned integrated system embodiment are all applicable to the present electronic device embodiment. The functions specifically implemented by the present electronic device embodiment are the same as those of the above-mentioned integrated system embodiment, and the beneficial effects achieved are also the same as those achieved by the above-mentioned gate drive voltage conversion circuit embodiment.

[0041] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the term "switch" should be understood in a broad sense, for example, it can be a transformation or a conversion; for ordinary technicians in this field, the specific meaning of the above terms in the present invention can be understood according to specific circumstances.

[0042] In the description of this specification, the description of the reference term means that the specific structure or feature described in conjunction with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0043] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

[0044] The above is a specific description of the preferred implementation of the present application, but the present application is not limited to the described embodiments. Technical personnel familiar with the field may make various equivalent modifications or substitutions without violating the spirit of the present application. These equivalent modifications or substitutions are all included in the scope defined by the claims of the present application.

Claims

1. A gate drive voltage conversion circuit, characterized in that: include: Power management chip, gate driver, SiC field effect tube power switch module and voltage conversion module; The output end of the power management chip is connected to the first input end of the gate driver; the output end of the gate driver is connected to the SiC field effect tube power switch module; the SiC field effect tube power switch module is connected to the voltage conversion module; the output voltage of the gate driver is 15-20V.

2. The gate drive voltage conversion circuit according to claim 1, characterized in that: The SiC field effect tube power switch module includes a first resistor, a second resistor and a SiC field effect tube; one end of the first resistor is connected to the output end of the gate driver, the other end of the first resistor and one end of the second resistor are connected to the gate of the SiC field effect tube, and the drain of the SiC field effect tube is connected to the voltage conversion module; the source of the SiC field effect tube and the other end of the second resistor are both grounded.

3. The gate drive voltage conversion circuit according to claim 2, characterized in that: The voltage conversion module includes a first power supply, a transformer, a first diode and a first capacitor; the first power supply is connected to one end of the primary winding of the transformer; the other end of the primary winding of the transformer is connected to the drain of the SiC field effect transistor; one end of the secondary winding of the transformer is connected to the positive electrode of the first diode; one end of the first capacitor is connected to the negative electrode of the first diode; the other end of the first capacitor is connected to the other end of the secondary winding of the transformer; the other end of the first capacitor serves as the first output end of the gate drive voltage conversion circuit, and the negative electrode of the first diode serves as the second output end of the gate drive voltage conversion circuit.

4. The gate drive voltage conversion circuit according to claim 3, characterized in that: The first capacitor is an electrolytic capacitor; the positive electrode of the first capacitor is connected to the negative electrode of the first diode; the negative electrode of the first capacitor is connected to the other end of the secondary winding of the transformer, and the negative electrode of the first capacitor serves as the first output end of the gate drive voltage conversion circuit.

5. The gate drive voltage conversion circuit according to claim 2, characterized in that: The second input terminal of the gate driver is connected to a second power supply, and an output voltage VDD of the second power supply satisfies the relationship: VDD=V drop +V drive Where VDD is the output voltage of the second power supply, V drop is the internal voltage drop after the gate driver is turned on, V drive is the output voltage of the gate driver, 15V≤V drive ≤20V.

6. The gate drive voltage conversion circuit according to claim 5, characterized in that: The internal voltage drop of the gate driver after being turned on is 0.3-1V.

7. The gate drive voltage conversion circuit according to claim 5, characterized in that: The power management chip includes a voltage input terminal; a voltage input to the voltage input terminal is the same as an output voltage of the second power supply.

8. The gate drive voltage conversion circuit according to claim 1, characterized in that: The output voltage of the power management chip is 1.8-14V.

9. An integrated system, characterized in that: It comprises a gate drive voltage conversion circuit as described in any one of claims 1 to 8.

10. An electronic device, characterized in that: Comprising the integrated system as claimed in claim 9.

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