Wafer edge grinding device and semiconductor manufacturing equipment
By designing a wafer edge grinding device for semiconductor manufacturing, the stage and grinding rack drive the grinding head movement, accurately adjusting the grinding distance and depth, and through protection measures of the shielding ring and gas pipeline, the pollution and damage problems in the wafer edge area are solved, significantly improving the yield of the wafer.
Patent Information
- Application Number
- CN202420926070.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-28
- Publication Date
- 2025-06-10
- Estimated Expiration
- 2034-04-28
AI Technical Summary
After removing the crystal edge SiGe and NiSi of the wafer, the prior art causes a huge height difference near the crystal edge position, which reduces the yield of the wafer, and has problems such as polymer residue, metal flapping and arc discharge.
Design a wafer edge grinding device, including a stage, a grinding rack and a grinding head. The stage drives the wafer to rotate, and the grinding rack drives the grinding head to move in different directions, so as to accurately adjust the distance and depth of the grinding. At the same time, the double protection of the shielding ring and gas pipeline is adopted to prevent tiny particles or impurities from entering the wafer.
The freely moving grinding head enables rapid and precise adjustment of the grinding distance and depth, making the film layer flatter and improving wafer yield. The protection measures of the barrier ring and gas effectively avoid contamination and damage in the edge area of the wafer, and improve the effective number of dies and overall yield in the edge area.
Smart Images
Figure CN222958350U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to an edge grinding device for a wafer and a semiconductor manufacturing device. Background Art
[0002] In the prior art, after removing SiGe (silicon germanium) and NiSi (nickel silicide) on the edge of a wafer by using a dry etching process, a huge height difference will appear near the edge position of the wafer, posing a risk to the effective die of the wafer, thereby reducing the wafer yield. In addition, problems such as Polymer residue, metal peeling, and arcing are likely to occur in the edge region, resulting in losses of the effective die. Therefore, there is room for improvement. Summary of the Utility Model
[0003] In view of the above-mentioned disadvantages of the prior art, the purpose of the present utility model is to provide an edge grinding device for a wafer and a semiconductor manufacturing device, which are used to solve the problem that after removing silicon germanium and nickel silicide in the prior art, a huge height difference is formed near the edge position of the wafer, resulting in a reduction in the wafer yield.
[0004] To achieve the above object and other related objects, the present utility model provides an edge grinding device for a wafer, including:
[0005] A carrier table for carrying the wafer;
[0006] A grinding frame located on one side of the carrier table, and the grinding frame includes:
[0007] A base located on one side of the carrier table;
[0008] A vertical support arm connected to the base; and
[0009] A horizontal support arm connected to one end of the vertical support arm; and
[0010] A grinding head connected to the output end of the grinding frame;
[0011] Wherein, the carrier table drives the wafer to rotate, the grinding head is connected to one end of the horizontal support arm, the grinding frame drives the grinding head to move in different directions, and the grinding head contacts the edge of the wafer for grinding.
[0012] In an embodiment of the present utility model, a shielding ring is further included, the shielding ring is located on the top of the wafer, and there is a gap between the shielding ring and the wafer.
[0013] In an embodiment of the present utility model, the diameter of the shielding ring is smaller than the diameter of the wafer, and the difference between the diameter of the shielding ring and the diameter of the wafer is in the range of 5 mm to 7 mm.
[0014] In an embodiment of the present utility model, the edge grinding device for the wafer further includes a gas pipeline, and the gas pipeline conveys a protective gas to the top surface of the wafer.
[0015] In an embodiment of the present utility model, the gas pipeline is located at the central position of the shielding ring, and the outlet of the gas pipeline faces the center of the wafer.
[0016] In an embodiment of the present utility model, the edge grinding device for the wafer further includes a liquid pipeline, and the liquid pipeline conveys a grinding liquid to the top surface of the wafer, and the outlet of the liquid pipeline faces the edge of the wafer.
[0017] In an embodiment of the present utility model, along the moving direction of the grinding head on the edge of the wafer, the outlet of the liquid pipeline is located in front of the grinding head.
[0018] In an embodiment of the present utility model, the carrier includes:
[0019] A base;
[0020] A driving motor, connected to the top of the base; and
[0021] An adsorption disc, connected to the output end of the driving motor;
[0022] Wherein, the wafer is connected to the central position of the adsorption disc.
[0023] The present utility model also provides a semiconductor manufacturing device, including the edge grinding device for the wafer as described in any one of the above.
[0024] As described above, an edge grinding device for a wafer and a semiconductor manufacturing device of the present utility model have the following beneficial effects: The structure of the present utility model is simple and is easy to be industrially mass-produced and applied. Through the freely movable grinding head, the grinding distance and depth can be quickly and accurately adjusted, so that the film layer after grinding is flatter, and the yield of the wafer is improved. In addition, the present utility model also adopts double protection of a blocking ring and gas to avoid minute particles or impurities generated by grinding from entering the interior of the wafer, effectively solving problems such as the exposure of silicon germanium and metal in the edge region of the wafer, polymer residue, metal lifting, and arc discharge. Description of the Drawings
[0025] Figure 1 It shows a schematic structural diagram of a wafer after chemical mechanical polishing in the prior art.
[0026] Figure 2 Shown is a schematic structural view of an edge grinding device for a wafer of the present utility model.
[0027] Figure 3 Shown is another schematic structural view of an edge grinding device for a wafer of the present utility model.
[0028] Figure 4 Shown is a schematic structural view of a grinding frame of the present utility model.
[0029] Element reference numeral description
[0030] 100, wafer; 110, edge
[0031] 200, carrier; 210, base; 220, drive motor; 230, suction cup
[0032] 300, grinding frame; 310, base; 320, vertical support arm; 321, vertical fixed section; 322, vertical movable section; 330, horizontal support arm; 331, horizontal fixed section; 332, horizontal movable section
[0033] 400, grinding head; 500, shielding ring; 600, gas pipeline; 700, liquid pipeline Detailed implementation manners
[0034] The following illustrates the implementation manners of the present utility model through specific examples. Those skilled in the art can easily understand other advantages and effects of the present utility model from the content disclosed in this specification. The present utility model can also be implemented or applied through different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present utility model. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other. It should also be understood that the terms used in the embodiments of the present utility model are for the purpose of describing specific implementation manners and not for limiting the protection scope of the present utility model. The test methods without specific conditions noted in the following embodiments are usually in accordance with conventional conditions or in accordance with the conditions recommended by each manufacturer.
[0035] Please refer to Figures 1 to 4, It should be noted that the structures, proportions, sizes, etc. shown in the drawings of this specification are only used to match the content disclosed in the specification for those familiar with this technology to understand and read, and are not used to limit the conditions for the implementation of the present utility model. Therefore, they do not have substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects that the present utility model can produce and the purposes that can be achieved, should still fall within the scope covered by the technical content disclosed in the present utility model. At the same time, the terms such as "upper", "lower", "left", "right", "middle", and "one" cited in this specification are only for the convenience of clear narration and are not used to limit the scope of implementation of the present utility model. The change or adjustment of their relative relationships, without substantial change in the technical content, should also be regarded as the scope within which the present utility model can be implemented.
[0036] Please refer to Figure 1 , Figure 1 It shows a schematic structural diagram of a wafer after chemical mechanical polishing in the prior art. During the HKMG (High-K gate oxide layer + Metal Gate) technology process of the wafer 100, after the atomic layer deposition, the wafer 100 needs to be polished. The position 2.5 mm from the edge of the wafer 100 can be called the crystal edge 110. Due to the relatively fast polishing rate of CMP (Chemical Mechanical Polishing), the SiGe and NiSi are exposed at the crystal edge 110, thus causing the problem of contaminating the cavities of other layers. Therefore, it is necessary to remove the SiGe and NiSi in the edge area.
[0037] The present utility model provides a crystal edge polishing device for a wafer and a semiconductor manufacturing equipment, which can be specifically applied to polishing the crystal edge part of the wafer during the semiconductor manufacturing process. The present utility model can solve problems such as the exposure of silicon germanium and metal, polymer residue, metal lifting, and arc discharge in the edge area of the wafer, and can improve the yield of the wafer. The following is a detailed description through specific embodiments.
[0038] Please refer to Figure 2 , Figure 2Shown is a schematic structural view of an edge grinding device for a wafer of the present utility model. In an embodiment of the present utility model, the edge grinding device for a wafer may include a stage 200, a grinding frame 300, and a grinding head 400. Among them, the stage 200 can be used to carry the wafer 100. Specifically, the stage 200 can adsorb the wafer 100 and drive the wafer 100 to rotate. The grinding frame 300 can be located on one side of the stage 200. The grinding head 400 can be connected to the output end of the grinding frame 300. The grinding frame 300 can drive the grinding head 400 to move in different directions. In this embodiment, first, the stage 200 drives the wafer 100 to rotate, and then the grinding frame 300 moves the grinding head 400 to contact the edge 110 of the wafer 100 and perform grinding. By controlling the grinding head 400 to move in different directions through the grinding frame 300, the grinding distance and depth can be precisely adjusted, so that the film layer after grinding is flatter.
[0039] Please refer to Figure 3 , Figure 3 Shown is another schematic structural view of an edge grinding device for a wafer of the present utility model. In an embodiment of the present utility model, the edge grinding device for a wafer may further include a shielding ring 500 and a gas pipeline 600. Among them, the shielding ring 500 can be located on the top of the stage 200. The center of the shielding ring 500 and the center of the wafer 100 can be on the same vertical line. There is a gap between the shielding ring 500 and the wafer 100. Specifically, when grinding the edge 110, the shielding ring 500 can be lowered to a distance of 1 mm to 3 mm from the top of the wafer 100. In this embodiment, the diameter of the shielding ring 500 can be slightly smaller than the diameter of the wafer 100. For example, the difference between the diameter of the shielding ring 500 and the diameter of the wafer 100 can be in the range of 5 mm to 7 mm. When the wafer 100 rotates for grinding, the shielding ring 500 can block the fine particles or impurities generated by grinding to prevent them from entering the inside of the wafer 100, that is, the inner side of the edge 110. The outlet of the gas pipeline 600 can face the center of the wafer 100. Specifically, the gas pipeline 600 can be arranged at the center position of the shielding ring 500, and the gas pipeline 600 can be perpendicular to the top surface of the wafer 100. The gas pipeline 600 can be used to convey a protective gas to the top surface of the wafer 100. For example, N 2 (nitrogen), Ar (argon), and He (helium), etc. can be conveyed to the top surface of the wafer 100. In this embodiment, when the wafer 100 rotates for grinding, the protective gas is continuously introduced through the gas pipeline 600, and the protective gas diffuses from the center of the wafer 100 to the edge area, thereby taking away the fine particles or impurities generated by grinding, so as to increase the effective die number in the edge area, and further improve the overall yield.
[0040] Please refer to Figure 3, in an embodiment of the present utility model, the edge grinding device of the wafer may further include a liquid pipeline 700. The outlet of the liquid pipeline 700 may face the edge 110. Specifically, the liquid pipeline 700 may be disposed at the edge position of the shielding ring 500. Along the moving direction of the grinding head 400 on the edge 110, the outlet of the liquid pipeline 700 may be located in front of the grinding head 400. When the wafer 100 rotates for grinding, the liquid pipeline 700 may continuously supply grinding liquid to the edge 110, thereby improving the grinding processing efficiency and quality.
[0041] Please refer to Figure 3 , in an embodiment of the present utility model, the carrier 200 may include a base 210, a driving motor 220, and a suction disc 230. Among them, the driving motor 220 may be connected to the top of the base 210. The suction disc 230 may be connected to the output end of the driving motor 220. In this embodiment, the wafer 100 may be placed at the central position of the suction disc 230, and the suction disc 230 may fix the wafer 100 by means of negative pressure adsorption. The driving motor 220 drives the suction disc 230 to rotate according to system control to drive the wafer 100 for grinding.
[0042] Please refer to Figure 3 , in an embodiment of the present utility model, the grinding frame 300 may include a base 310, a vertical arm 320, and a horizontal arm 330. Among them, the base 310 may be disposed on one side of the carrier 200. The vertical arm 320 may be connected to the base 310. The horizontal arm 330 may be connected to one end of the vertical arm 320. The grinding head 400 may be connected to one end of the horizontal arm 330. In this embodiment, the vertical arm 320 may be telescopic along the axial direction of the wafer 100, and the horizontal arm 330 may be telescopic along the radial direction of the wafer 100. It can be seen therefrom that the grinding frame 300 can drive the grinding head 400 to move in different directions to realize the adjustment of grinding process parameters such as distance and depth according to process requirements.
[0043] Please refer to Figure 4 , Figure 4Shown is a schematic structural view of the grinding frame 300 of the present utility model. In an embodiment of the present utility model, the vertical support arm 320 may include a vertical fixed section 321 and a vertical movable section 322. Among them, the vertical movable section 322 may be slidably connected to the vertical fixed section 321. The horizontal support arm 330 may include a horizontal fixed section 331 and a horizontal movable section 332. Among them, the horizontal movable section 332 may be slidably connected to the horizontal fixed section 331. In this embodiment, the vertical fixed section 321 may be fixedly connected to the base 310, the horizontal fixed section 331 may be fixedly connected to the vertical movable section 322, and the grinding head 400 may be fixedly connected to the horizontal movable section 332. Thus, it can be seen that the grinding frame 300 can, according to process requirements, adjust the grinding distance and depth by controlling the lengths of the vertical support arm 320 and the horizontal support arm 330, thereby achieving control of the loss amount in the crystal edge region.
[0044] The present utility model further provides a semiconductor manufacturing apparatus, which may include the crystal edge grinding device for a wafer described in any of the above embodiments. This semiconductor manufacturing apparatus can be used for the wafer CMP (Chemical Mechanical Polishing) process, and the above semiconductor manufacturing apparatus can adopt the crystal edge grinding device provided by the present utility model to grind the crystal edge part of the wafer during the semiconductor manufacturing process to remove silicon germanium and nickel silicide in the edge region.
[0045] In summary, the present utility model provides a crystal edge grinding device for a wafer and a semiconductor manufacturing apparatus, which have the advantages of simple structure and being easy to be industrially mass-produced and applied. The present utility model can quickly and accurately adjust the grinding distance and depth through a freely movable grinding head, making the film layer after grinding smoother. At the same time, the present utility model also adopts double protection of a barrier ring and gas to avoid tiny particles or impurities generated by grinding from entering the wafer interior, improving the effective die number in the edge region and the overall yield rate, and effectively solving problems such as silicon germanium and metal exposure, polymer residue, metal lifting, and arc discharge in the edge region. Therefore, the present utility model effectively overcomes various drawbacks in the prior art and has high industrial utilization value.
[0046] The above embodiments only illustratively explain the principle and its efficacy of the present utility model, rather than limiting the present utility model. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present utility model. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present utility model should still be covered by the claims of the present utility model.
[0047] Accordingly, numerous modifications may be made to adapt a particular environment or material to the essential scope and spirit of the present utility model. The present utility model is not intended to be limited to the specific terms used in the following claims and / or to the specific embodiments disclosed as the best mode contemplated for carrying out the present utility model, but the present utility model will include any and all embodiments and equivalents falling within the scope of the appended claims. Thus, the scope of the present utility model will be determined solely by the appended claims.
Claims
1. A wafer edge grinding device, characterized in that: include: A stage for carrying the wafer; A grinding frame is located on one side of the carrier, and the grinding frame includes: A base, located on one side of the carrier; A vertical support arm connected to the base; and a transverse support arm connected to one end of the vertical support arm; and A grinding head connected to the output end of the grinding frame; The carrier drives the wafer to rotate, the grinding head is connected to one end of the horizontal support arm, the grinding frame drives the grinding head to move in different directions, and the grinding head contacts the edge of the wafer for grinding.
2. The wafer edge grinding device according to claim 1, characterized in that: It also includes a shielding ring, which is located on the top of the wafer, and there is a gap between the shielding ring and the wafer.
3. The wafer edge grinding device according to claim 2, characterized in that: The diameter of the shielding ring is smaller than the diameter of the wafer, and the difference between the diameter of the shielding ring and the diameter of the wafer is in the range of 5 mm to 7 mm.
4. The wafer edge grinding device according to claim 2, characterized in that: The wafer edge grinding device further comprises a gas pipeline, and the gas pipeline delivers protective gas to the top surface of the wafer.
5. The wafer edge grinding device according to claim 4, characterized in that: The gas pipeline is located at the center of the shielding ring, and the outlet of the gas pipeline faces the center of the wafer.
6. The wafer edge grinding device according to claim 1, characterized in that: The wafer edge grinding device further comprises a liquid pipeline, wherein the liquid pipeline conveys grinding liquid to the top surface of the wafer, and an outlet of the liquid pipeline faces the wafer edge.
7. The wafer edge grinding device according to claim 6, characterized in that: Along the moving direction of the grinding head on the edge of the wafer, the outlet of the liquid pipeline is located in front of the grinding head.
8. The wafer edge grinding device according to claim 1, characterized in that: The carrier comprises: Pedestal; A driving motor connected to the top of the base; and A suction plate connected to the output end of the driving motor; Wherein, the wafer is connected to the center position of the adsorption plate.
9. A semiconductor manufacturing equipment, characterized in that: A wafer edge grinding device comprising the wafer edge grinding device according to any one of claims 1 to 8.