Ultrahigh vacuum thin film deposition equipment

Abstract

The utility model relates to the technical field of film preparation, in particular to ultrahigh vacuum film deposition equipment which comprises a process cavity, a pre-vacuumizing chamber cavity is arranged on the upper portion of the left end of the process cavity, a pre-vacuumizing chamber molecular pump is loaded at the lower end of the pre-vacuumizing chamber cavity, and a low vacuum gauge is fixedly installed at the left end of the pre-vacuumizing chamber molecular pump. The low-temperature pump is fixedly mounted at the right end of the process cavity; and the ultrahigh-pressure ultrahigh vacuum gauge is mounted at the rear end of the low-temperature pump. When the device is used, the device process cavity is designed, the ultra-high pressure sample table, the sample film thickness probe, the ultra-high pressure electron gun and the butt joint port are all sealed by metal, the thin film deposition process and a control system are optimized, the ultimate vacuum degree of the device system can reach 6.67 * 10 <-10 > torr, and therefore the prepared thin film is high in purity and good in uniformity and compactness.

Description

Technical Field

[0001] The utility model relates to the technical field of thin film preparation, and particularly relates to an ultra-high vacuum thin film deposition device. Background Technique

[0002] As early as the end of the 19th century, people knew an important property of electrons, that is, each electron carries a certain amount of electric charge, namely the elementary charge (e = 1.60219×10-19 coulombs). By the mid-1920s, the birth of quantum mechanics told people that in addition to carrying electric charge, electrons also have another important property, that is, spin. Traditional electronics and semiconductor physics are actually the study of the electric charge of electrons. All kinds of electronic circuits, including data processing integrated circuits, utilize the electric charge of electrons. The research on electron spin has only recently made obvious progress, and spintronics has emerged.

[0003] Spintronics is a discipline that studies the spin and magnetic moment of electrons. It allows us to use the spin of electrons to store and process information, rather than just the electric charge of electrons. Moreover, the research on electron spin is expected to produce new quantum mechanical devices, such as spin transistors, spin filters and modulators, new memories, quantum information processors and quantum computing. Since its birth, this emerging discipline has burst out with strong vitality and shown broad development prospects. Preparing spintronic thin films is the first and most crucial step in studying spintronic devices. Magnetron sputtering, electron beam evaporation, pulsed laser deposition, and atomic layer deposition are all optional process paths for preparing spintronic thin films.

[0004] Existing processes prepare thin films in a high vacuum environment (vacuum degree of 10-6 torr). The coating processes mainly include magnetron sputtering, electron beam evaporation, pulsed laser deposition, etc. However, the common problem of these coating processes is that the vacuum degree of the equipment does not reach ultra-high vacuum, and the purity of the thin film is not high enough, resulting in poor performance of the spintronic thin film and unable to characterize many characteristics of spintronic devices. Therefore, those skilled in the art have provided an ultra-high vacuum thin film deposition device to solve the problems raised in the above background technique. Content of the Utility Model

[0005] To solve the above technical problems, the utility model provides an ultra-high vacuum thin film deposition device, which includes a process chamber. The upper part of the left end of the process chamber is provided with a pre-pumping chamber cavity. The lower end of the pre-pumping chamber cavity is loaded with a pre-pumping chamber molecular pump. A low vacuum gauge is fixedly installed at the left end of the pre-pumping chamber molecular pump. A cryopump is fixedly installed at the right end of the process chamber, and an ultra-high pressure ultra-high vacuum gauge is connected to the rear end of the cryopump;

[0006] A cavity upper door lifting mechanism is fixedly installed at the upper end of the process cavity. A rotatable ultra-high pressure sample stage is installed on the cavity upper door lifting mechanism. A sample rack baffle is fixedly installed at the side end of the ultra-high pressure sample stage. Ultra-high pressure electron guns are symmetrically installed at the left and right centers of the ultra-high pressure sample stage. Corresponding electron gun baffles are provided on the ultra-high pressure electron guns. A sample film thickness probe is provided at the bottom of the ultra-high pressure sample stage.

[0007] Preferably: A frame is fixedly installed at the lower end of the process cavity. A number of lifting support feet are fixedly installed at the lower end of the frame for lifting.

[0008] Preferably: An ultra-high pressure windowed quick-opening door is provided in the middle of the front end of the process cavity.

[0009] Preferably: An ultra-high pressure expansion interface is connected and installed at the rear end of the process cavity.

[0010] Preferably: A sample transfer rod support is fixedly installed at the left end of the frame.

[0011] Preferably: A sample transfer rod is fixedly installed at the left end of the pre-pumping chamber cavity. The sample transfer rod support is used to bracket the sample transfer rod.

[0012] The technical effects and advantages of the present utility model:

[0013] When the present utility model is in use, the process cavity of the device is designed, and the ultra-high pressure sample stage, the sample film thickness probe, the ultra-high pressure electron gun, and the interface are all sealed with metal. The thin film deposition process and the control system are optimized, so that the ultimate vacuum degree of the device system can reach 6.67×10-10 torr, thereby obtaining a high-purity, uniform and dense thin film. Description of the Drawings

[0014] Figure 1 is the structural schematic diagram provided by this application;

[0015] Figure 2 is the structural schematic diagram of the ultra-high pressure electron gun provided by this application;

[0016] In the figure: 1, frame; 2, sample transfer rod support; 3, lifting support foot; 4, process cavity; 5, pre-pumping chamber cavity; 6, pre-pumping chamber molecular pump; 7, low vacuum gauge; 8, sample transfer rod; 9, ultra-high pressure windowed quick-opening door; 10, ultra-high pressure expansion interface; 11, cryopump; 12, sample film thickness probe; 13, sample rack baffle; 14, ultra-high pressure sample stage; 15, cavity upper door lifting mechanism; 16, ultra-high pressure ultra-high vacuum gauge; 17, ultra-high pressure electron gun; 18, electron gun baffle. Detailed Embodiments

[0017] The following further describes the present utility model in detail in conjunction with the accompanying drawings and specific embodiments. The embodiments of the present utility model are given for purposes of illustration and description, and are not exhaustive or limited to the disclosed form. Many modifications and variations are obvious to those of ordinary skill in the art. The embodiments are selected and described to better illustrate the principles and practical applications of the present utility model, and enable those of ordinary skill in the art to understand the present utility model and thus design various embodiments with various modifications suitable for specific purposes.

[0018] Please refer to Figures 1 to 2 , in this embodiment, a high-vacuum thin-film deposition device is provided, including a process chamber 4. A frame 1 is fixedly installed at the lower end of the process chamber 4, and a number of lifting support feet 3 are fixedly installed at the lower end of the frame 1 for lifting. A super-high-pressure windowed quick-opening door 9 is provided in the middle of the front end of the process chamber 4, and a super-high-pressure expansion interface 10 is connected to the rear end of the process chamber 4;

[0019] A sample transfer rod support 2 is fixedly installed at the left end of the frame 1. A pre-pumping chamber cavity 5 is arranged at the upper left part of the process chamber 4. A sample transfer rod 8 is fixedly installed at the left end of the pre-pumping chamber cavity 5. The sample transfer rod support 2 is used to support the sample transfer rod 8. A pre-pumping chamber molecular pump 6 is loaded at the lower end of the pre-pumping chamber cavity 5. A low-vacuum gauge 7 is fixedly installed at the left end of the pre-pumping chamber molecular pump 6. A cryopump 11 is fixedly installed at the right end of the process chamber 4, and a super-high-pressure ultra-high-vacuum gauge 16 is connected to the rear end of the cryopump 11;

[0020] A cavity upper door lifting mechanism 15 is fixedly installed at the upper end of the process chamber 4. A rotatable super-high-pressure sample stage 14 is installed on the cavity upper door lifting mechanism 15. A sample rack baffle 13 is fixedly installed at the side end of the super-high-pressure sample stage 14. Super-high-pressure electron guns 17 are symmetrically installed at the left and right centers on the super-high-pressure sample stage 14. Corresponding electron gun baffles 18 are arranged on the super-high-pressure electron guns 17. A sample film thickness probe 12 is arranged at the bottom of the super-high-pressure sample stage 14.

[0021] The working principle of the present utility model is as follows: 1. Frame; 2. Sample transfer rod support; 3. Lifting support foot; 4. Process chamber; 5. Pre-pumping chamber cavity; 6. Pre-pumping chamber molecular pump; 7. Low-vacuum gauge; 8. Sample transfer rod; 9. Super-high-pressure windowed quick-opening door; 10. Super-high-pressure expansion interface; 11. Cryopump; 12. Sample film thickness probe; 13. Sample rack baffle; 14. Super-high-pressure sample stage; 15. Cavity upper door lifting mechanism; 16. Super-high-pressure ultra-high-vacuum gauge; 17. Super-high-pressure electron gun; 18. Electron gun baffle

[0022] When the utility model is in use, it is necessary to inject an anion electron beam with negative charge through the sample transfer rod 8. The anion electron beam with negative charge is deposited inside the process chamber 4, causing negative charge to appear at the inner bottom of the device. Through the departure of the negative charge, the attraction of the departure of the positive charge is realized. At the material inlet B of the device, the original ion group of the material carries a positive charge. The ion group carrying the positive charge is deposited at the inner bottom of the device and then forms a film shape under the action of the electron departure. In view of the requirements of the spin electron film, by designing the process chamber 4 of the device, the ultra-high pressure sample stage 14, the sample film thickness probe 12, the ultra-high pressure electron gun 17 and the docking interface are all sealed with metal, optimizing the film deposition process and the control system, so that the ultimate vacuum degree of the device system can reach 6.67×10-10 torr, thereby obtaining a high-purity, uniform and dense film.

[0023] Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art and related fields without creative efforts shall fall within the protection scope of the present utility model. The structures, devices and operation methods not specifically described and explained in the present utility model, unless otherwise specified and limited, shall be implemented by conventional means in the art.

Claims

1. An ultra-high vacuum thin film deposition device, comprising a process chamber (4), characterized in that: A pre-vacuum chamber cavity (5) is arranged at the upper left end of the process cavity (4); a pre-vacuum chamber molecular pump (6) is loaded at the lower end of the pre-vacuum chamber cavity (5); a low vacuum gauge (7) is fixedly installed at the left end of the pre-vacuum chamber molecular pump (6); a cryogenic pump (11) is fixedly installed at the right end of the process cavity (4); and an ultra-high pressure and ultra-high vacuum gauge (16) is connected to the rear end of the cryogenic pump (11); A chamber door lifting mechanism (15) is fixedly mounted on the upper end of the process chamber (4), a rotatable ultra-high voltage sample stage (14) is mounted on the chamber door lifting mechanism (15), a sample holder baffle (13) is fixedly mounted on the side end of the ultra-high voltage sample stage (14), an ultra-high voltage electron gun (17) is symmetrically mounted on the left and right centers of the ultra-high voltage sample stage (14), a corresponding electron gun baffle (18) is arranged on the ultra-high voltage electron gun (17), and a sample film thickness probe (12) is arranged at the bottom of the ultra-high voltage sample stage (14).

2. The ultra-high vacuum thin film deposition equipment according to claim 1, characterized in that: A frame (1) is fixedly mounted on the lower end of the process chamber (4), and a plurality of lifting support legs (3) are fixedly mounted on the lower end of the frame (1) for lifting.

3. The ultra-high vacuum thin film deposition equipment according to claim 2, characterized in that: An ultra-high pressure quick-opening door (9) with a viewing window is provided in the middle of the front end of the process chamber (4).

4. The ultra-high vacuum thin film deposition equipment according to claim 3, characterized in that: The rear end of the process chamber (4) is connected to an ultra-high pressure expansion interface (10).

5. The ultra-high vacuum thin film deposition equipment according to claim 4, characterized in that: A sample transfer rod support (2) is fixedly mounted on the left end of the frame (1).

6. The ultra-high vacuum thin film deposition equipment according to claim 5, characterized in that: A sample transfer rod (8) is fixedly mounted on the left end of the pre-vacuum chamber cavity (5), and the sample transfer rod support (2) is used to support the sample transfer rod (8).

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