Wafer ion implantation device

Abstract

The utility model discloses a wafer ion implantation device, which comprises an ion implanter, an ion beam emitter arranged in the ion implanter, a fixed frame arranged in the ion implanter, a motor, an exhaust pipe, a rotating rod inserted on the outer wall of the top of the fixed frame through a bearing, and a linkage assembly arranged at the top end of the rotating rod. According to the utility model, a plurality of wafers can be respectively placed on the plurality of bearing autorotation assemblies, and ion implantation is carried out on the plurality of wafers in turn through rotation of the rotating rod, so that high surface temperature caused by continuous ion implantation of a single wafer in a certain time is avoided, and dust on the surfaces of the wafers can be cleaned by using the dust cleaning assemblies in the wafer rotation process; the air suction pipe is matched to suck air and dust away, non-uniformity of ion implantation caused by dust on the surface of the wafer is avoided, the wafer can continuously pass through the lower portion of the air suction pipe in the rotating process, heat on the surface of the wafer can be taken away by the air suction pipe in the air suction process, and heat dissipation of the wafer is facilitated.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, in particular to a wafer ion implantation device. Background Technique

[0002] At present, when the existing ion implantation device performs ion implantation, a manipulator is used to place a wafer under the ion beam emitter for ion implantation. After the implantation, the wafer is sent away by the manipulator, and then the next wafer is sent in. When the wafer is ion implanted, a large amount of heat will be generated on the surface. If this heat cannot be dissipated in time and effectively, it may cause the temperature of the wafer to rise, thereby affecting the performance and reliability of the wafer.

[0003] Since each implantation is performed on a single wafer for a certain period of time, it is easy to cause the surface temperature of the wafer to be too high. During the ion implantation process, dust on the surface of the wafer may also cause uneven ion implantation, affecting the implantation effect. Summary of the Utility Model

[0004] The purpose of the utility model is to provide a wafer ion implantation device to solve the problems in the above background technique that when the existing wafer is ion implanted, it is easy to cause the surface temperature to rise, and dust on the surface of the wafer may also cause uneven ion implantation, affecting the implantation effect.

[0005] To achieve the above purpose, the utility model provides the following technical solution: A wafer ion implantation device, including: an ion implanter, an ion beam emitter installed in the ion implanter, a fixing frame installed in the ion implanter, a motor and an exhaust pipe. It further includes: a rotating rod inserted on the outer wall of the top of the fixing frame through a bearing and a linkage component installed at the top of the rotating rod. A turntable and a mounting frame are installed on the outer wall of the rotating rod, and a plurality of equally spaced bearing self-rotating components are rotatably installed on the outer wall of the mounting frame. A driving gear is installed on the outer wall of the rotating rod, and a dust cleaning component is installed on the inner wall of the exhaust pipe. The rotating rod is connected to the dust cleaning component through the linkage component, and the output shaft of the motor is connected to the bottom of the rotating rod.

[0006] The bearing self-rotating component includes a driven shaft rotatably installed on the mounting frame, a driven gear installed on the outer wall of the driven shaft, a bracket installed on the top of the driven shaft, and a bearing table installed on the top of the bracket.

[0007] The dust cleaning component includes a fixing plate installed on the inner wall of the exhaust pipe, a rotating shaft inserted on the outer wall of the top of the fixing plate through a bearing, a brush plate fixed to the bottom of the rotating shaft, and a plurality of equally spaced bristles installed on the outer wall of the bottom of the brush plate.

[0008] The linkage assembly includes a driving pulley mounted on the rotating rod and a driven pulley mounted on the rotating shaft, and a belt is drivingly connected between the driving pulley and the driven pulley.

[0009] A plurality of through holes are equidistantly distributed on the outer wall of the top of the turntable, and the bearing table is rotatably connected to the inner wall of the through hole.

[0010] Two inlets and outlets are formed on the outer wall of the air extraction pipe, and the belt passes through these two inlets and outlets.

[0011] Compared with the prior art, the beneficial effects of the present utility model are as follows:

[0012] A wafer ion implantation device of the present utility model can place a plurality of wafers on a plurality of bearing and self-rotating assemblies respectively. Through the rotation of the rotating rod, the plurality of wafers are ion-implanted in turn, avoiding continuous ion implantation of a single wafer for a certain period of time, resulting in a relatively high surface temperature. During the rotation of the wafer, the dust on the surface of the wafer can be cleaned by the dust cleaning assembly, and the dust is sucked away by the air extraction pipe in cooperation, avoiding the unevenness of ion implantation caused by the dust on the surface of the wafer. Moreover, the wafer will continuously pass under the air extraction pipe during the rotation process, and the heat on the surface of the wafer can be taken away by the air extraction pipe during the air extraction process, which is beneficial to the heat dissipation of the wafer. Description of the Drawings

[0013] Figure 1 It is a schematic internal structure diagram of the ion implanter of the present utility model;

[0014] Figure 2 It is a schematic top view structure diagram of the turntable of the present utility model;

[0015] Figure 3 It is a schematic bottom view structure diagram of the turntable of the present utility model;

[0016] Figure 4 It is a schematic structure diagram of the bearing and self-rotating assembly of the present utility model;

[0017] Figure 5 It is a schematic structure diagram of the linkage assembly of the present utility model;

[0018] Figure 6 It is a schematic structure diagram of the dust cleaning assembly of the present utility model.

[0019] In the figure: 1. Ion implanter; 2. Ion beam emitter; 3. Fixed frame; 4. Motor; 5. Air extraction pipe; 6. Rotating rod; 7. Turntable; 8. Mounting frame; 9. Bearing and self-rotating assembly; 901. Driven shaft; 902. Driven gear; 903. Bracket; 904. Bearing table; 10. Driving gear; 11. Linkage assembly; 1101. Driving pulley; 1102. Driven pulley; 1103. Belt; 12. Dust cleaning assembly; 1201. Fixed plate; 1202. Rotating shaft; 1203. Brush plate; 1204. Brush bristles. Detailed implementation mode

[0020] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0021] Please refer to Figures 1-6 , a wafer ion implantation device provided by the present invention includes: an ion implanter 1, an ion beam emitter 2 installed in the ion implanter 1, a fixing frame 3 installed in the ion implanter 1, a motor 4 and an exhaust pipe 5. It also includes: a rotating rod 6 inserted on the outer wall of the top of the fixing frame 3 through a bearing and a linkage assembly 11 installed at the top end of the rotating rod 6. A turntable 7 and a mounting frame 8 are installed on the outer wall of the rotating rod 6, and a plurality of equally spaced load-bearing self-rotating assemblies 9 are rotatably installed on the outer wall of the mounting frame 8. A driving gear 10 is installed on the outer wall of the rotating rod 6, and a dust cleaning assembly 12 is installed on the inner wall of the exhaust pipe 5. The rotating rod 6 is connected to the dust cleaning assembly 12 through the linkage assembly 11, and the output shaft of the motor 4 is connected to the bottom of the rotating rod 6.

[0022] It should be noted here that: before implantation, multiple wafers can be placed on multiple load-bearing self-rotating assemblies 9 respectively. The motor 4 drives the rotating rod 6 to rotate, thereby driving the turntable 7, the mounting frame 8, the load-bearing self-rotating assemblies 9 and the driving gear 10 to rotate, so that multiple wafers can rotate cyclically under the ion beam emitter 2. The ion beam emitter 2 can emit an ion beam to implant ions into the wafers passing under it. By continuously alternating the positions of multiple wafers for ion implantation, it is avoided that a single wafer is continuously implanted with ions for a certain period of time, resulting in a relatively high surface temperature. At the same time, the load-bearing self-rotating assemblies 9 can rotate self-driven under the drive of the driving gear 10, thereby driving the wafers to rotate self-driven, which helps to improve the ion implantation effect. The rotation of the rotating rod 6 drives the dust cleaning assembly 12 to rotate through the linkage assembly 11. During the rotation process, the wafers pass under the exhaust pipe 5. Before the wafers pass under the ion beam emitter 2, the dust cleaning assembly 12 can be used to clean the dust on the surface of the wafers, and at the same time, the exhaust pipe 5 is used to pump out the dust by pumping air, avoiding the unevenness of ion implantation caused by the dust on the surface of the wafers and affecting the implantation effect. Moreover, after the wafers are ion-implanted, they will continuously pass under the exhaust pipe 5 during the rotation process of the rotating rod 6. The exhaust pipe 5 can take away the heat on the surface of the wafers during the pumping process, which is beneficial to the heat dissipation of the wafers.

[0023] In a preferred embodiment, the bearing self-rotating assembly 9 includes a driven shaft 901 rotatably mounted on the mounting frame 8, a driven gear 902 mounted on the outer wall of the driven shaft 901, a bracket 903 mounted on the top of the driven shaft 901, and a bearing platform 904 mounted on the top of the bracket 903.

[0024] It should be noted that the rotation of the rotating rod 6 drives the mounting frame 8 and the driving gear 10 to rotate, thereby driving the driven shaft 901 to rotate around the rotating rod 6. At the same time, the rotation of the driving gear 10 drives the driven gear 902 to rotate, thereby driving the driven shaft 901 to rotate.

[0025] In a preferred embodiment, the cleaning assembly 12 includes a fixed plate 1201 installed on the inner wall of the exhaust pipe 5, a rotating shaft 1202 connected to the top outer wall of the fixed plate 1201 through a bearing, a brush plate 1203 fixed to the bottom of the rotating shaft 1202, and a plurality of equidistantly distributed bristles 1204 installed on the bottom outer wall of the brush plate 1203.

[0026] It should be noted here that the rotation of the rotating rod 6 drives the rotating shaft 1202 to rotate through the linkage assembly 11, and the rotation of the rotating shaft 1202 drives the brush plate 1203 and the bristles 1204 to rotate, and the bristles 1204 are used to clean the wafer surface.

[0027] In a preferred embodiment, the linkage assembly 11 includes a driving pulley 1101 installed on the rotating rod 6 and a driven pulley 1102 installed on the rotating shaft 1202, and a belt 1103 is connected between the driving pulley 1101 and the driven pulley 1102.

[0028] It should be noted here that the rotation of the rotating rod 6 can drive the driving pulley 1101 to rotate, thereby driving the belt 1103 and the driven pulley 1102 to rotate, thereby driving the rotating shaft 1202 to rotate.

[0029] In a preferred embodiment, a plurality of equally spaced through holes are formed on the top outer wall of the turntable 7, and the support platform 904 is rotatably connected to the inner walls of the through holes.

[0030] It should be noted here that the turntable 7 does not affect the rotation of the supporting platform 904 .

[0031] In a preferred embodiment, two inlets and outlets are opened on the outer wall of the exhaust pipe 5, and the belt 1103 passes through the two inlets and outlets.

[0032] It should be noted here that the exhaust pipe 5 does not affect the operation of the belt 1103.

[0033] Working principle: Before injection, multiple wafers can be placed on multiple carrier platforms 904 respectively. The motor 4 drives the rotating rod 6 to rotate, thereby driving the turntable 7, the mounting bracket 8, the carrier platform 904 and the driving gear 10 to rotate, so that multiple wafers can rotate cyclically under the ion beam emitter 2. The ion beam emitter 2 can emit ion beams to perform ion implantation on the wafers passing under it. By continuously alternating the positions of multiple wafers for ion implantation, it is avoided that a single wafer is continuously implanted with ions for a certain period of time, resulting in a relatively high surface temperature. At the same time, during the rotation of the driving gear 10, the driven gear 902 is driven to rotate, thereby driving the driven shaft 901 to rotate, and then driving the carrier platform 904 and the wafers placed on it to rotate, which helps to improve the ion implantation effect;

[0034] The rotation of the rotating rod 6 can drive the driving pulley 1101 to rotate, thereby driving the belt 1103 and the driven pulley 1102 to rotate, and then driving the rotating shaft 1202 to rotate. The rotation of the rotating shaft 1202 drives the brush plate 1203 and the bristles 1204 to rotate. The bristles 1204 are used to clean the surface of the wafer. During the rotation of the wafer around the rotating rod 6, the wafer first passes under the air extraction pipe 5. Before the wafer passes under the ion beam emitter 2, the rotating bristles 1204 can be used to clean the dust on the surface of the wafer. At the same time, in cooperation with the air extraction pipe 5, the air extraction can suck away the dust, avoiding the unevenness of ion implantation caused by the dust on the surface of the wafer and affecting the implantation effect. Moreover, after the wafer undergoes ion implantation, it will continuously pass under the air extraction pipe 5 during the rotation process of the rotating rod 6. During the air extraction process, the air extraction pipe 5 can take away the heat on the surface of the wafer, which is beneficial to the heat dissipation of the wafer.

[0035] For those skilled in the art, it is obvious that the present utility model is not limited to the details of the above exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or basic characteristics of the present utility model. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present utility model is defined by the appended claims rather than the above description. Therefore, it is intended to include all changes falling within the meaning and scope of the equivalent elements of the claims in the present utility model. Any reference signs in the claims should not be regarded as limiting the claimed rights.

Claims

1. A wafer ion implantation device, comprising: An ion implanter (1), an ion beam emitter (2) installed in the ion implanter (1), a fixing frame (3) installed in the ion implanter (1), a motor (4) and an exhaust pipe (5); The invention is characterized in that it also includes: a rotating rod (6) inserted into the outer wall of the top of the fixing frame (3) through a bearing and a linkage assembly (11) installed on the top of the rotating rod (6); a turntable (7) and a mounting frame (8) are installed on the outer wall of the rotating rod (6); and a plurality of load-bearing self-rotating assemblies (9) rotatably installed at equal intervals on the outer wall of the mounting frame (8); a driving gear (10) is installed on the outer wall of the rotating rod (6); and a dust cleaning assembly (12) is installed on the inner wall of the exhaust pipe (5); the rotating rod (6) is connected to the dust cleaning assembly (12) through the linkage assembly (11), and the output shaft of the motor (4) is connected to the bottom of the rotating rod (6).

2. A wafer ion implantation device according to claim 1, characterized in that: The load-bearing self-rotating assembly (9) comprises a driven shaft (901) rotatably mounted on a mounting frame (8), a driven gear (902) mounted on an outer wall of the driven shaft (901), a bracket (903) mounted on the top of the driven shaft (901), and a load-bearing platform (904) mounted on the top of the bracket (903).

3. The wafer ion implantation device according to claim 1, characterized in that: The dust cleaning component (12) comprises a fixed plate (1201) mounted on the inner wall of the exhaust pipe (5), a rotating shaft (1202) plugged into the top outer wall of the fixed plate (1201) via a bearing, a brush plate (1203) fixed to the bottom of the rotating shaft (1202), and a plurality of equally spaced bristles (1204) mounted on the bottom outer wall of the brush plate (1203).

4. The wafer ion implantation device according to claim 3, characterized in that: The linkage assembly (11) comprises a driving pulley (1101) mounted on a rotating rod (6) and a driven pulley (1102) mounted on a rotating shaft (1202), and a belt (1103) is connected between the driving pulley (1101) and the driven pulley (1102) for transmission.

5. The wafer ion implantation device according to claim 2, characterized in that: The outer wall of the top of the turntable (7) is provided with a plurality of through holes which are evenly distributed, and the supporting platform (904) is rotatably connected to the inner wall of the through hole.

6. The wafer ion implantation device according to claim 4, characterized in that: The outer wall of the air extraction pipe (5) is provided with two inlets and outlets, and the belt (1103) passes through the two inlets and outlets.

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