Semiconductor device

Abstract

The utility model provides semiconductor equipment. The semiconductor equipment comprises a base, a gasket and a preheating ring, wherein a plurality of self-alignment assemblies are arranged on the surface, opposite to the preheating ring, of the gasket and used for limiting the position, opposite to the gasket, of the preheating ring; and the plurality of self-alignment components are distributed on the side edge of the flow center of the reaction gas. Therefore, according to the semiconductor equipment provided by the utility model, the connection stability of the preheating ring and the liner is improved by utilizing the plurality of self-alignment assemblies, so that the position deviation of the preheating ring in the technological process is avoided, the collision risk of the preheating ring and the base is reduced, the stability of the center of a reaction temperature field is favorably realized, and the uniformity of film growth is improved. And moreover, the distribution of each self-alignment assembly avoids the flow center of the reaction gas, so that the blockage of the flow of the reaction gas is effectively avoided, the uniform distribution of the gas flow density of the reaction gas flow field is ensured, the uniformity of film growth is further optimized, and the process effect is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, and particularly relates to a semiconductor device. Background Art

[0002] With the development of semiconductor technology, the epitaxy process (Epitaxy, EPI) has entered a lower process node, and the performance requirements for the epitaxial layer are getting higher and higher. Among them, the uniformity of the epitaxial layer is one of its important performance parameters. However, as Figure 1 shown, in the epitaxy process, due to the changes in the gas flow field and temperature field in the reaction chamber, the position of the preheating ring 10 in the equipment is likely to shift, causing the horizontal distance G and vertical distance L between the preheating ring 10 and the wafer pedestal 11 to change, and further resulting in the inconsistency between the rotation center of the wafer pedestal 11 and the centers of the temperature field and gas flow field, seriously affecting the film thickness uniformity of the epitaxial layer. Especially in a high-pressure environment, the pumping speed of the pump body in the reaction chamber is relatively fast, and the change in the gas flow field is large. It will not only affect the process effect, but also increase the collision probability between the wafer pedestal 11 and the preheating ring 10, causing Figure 2 the collision loss shown. Therefore, as Figure 2 and Figure 3 shown, in the existing process, a connection structure 13 is formed between the lower gasket 12 and the preheating ring 10 to prevent the offset of the preheating ring 10. However, the connection structure 13 is arranged in the pumping direction of the pump body 14, which is likely to block the gas flow, resulting in uneven density distribution of the gas flow field and affecting the film formation uniformity.

[0003] Therefore, there is an urgent need for a new semiconductor device to solve the above technical problems. Summary of the Utility Model

[0004] The purpose of the utility model is to provide a semiconductor device to solve at least one of the problems of how to avoid the offset of the preheating ring position, how to reduce the collision risk between the preheating ring and the wafer pedestal, how to improve the gas flow distribution uniformity in the reaction chamber, and how to improve the growth uniformity of the semiconductor film layer.

[0005] To solve the above technical problems, the utility model provides a semiconductor device, including: a pedestal, a gasket, and a preheating ring; the pedestal is used for carrying a wafer; the gasket and the preheating ring are both arranged around the circumference of the pedestal, and the preheating ring is located on the top surface of the gasket and is used for heating reaction gas; wherein,

[0006] a plurality of self-aligning components are arranged on the relative surfaces of the gasket and the preheating ring for defining the position of the preheating ring relative to the gasket; and the plurality of self-aligning components are distributed on the sides of the flow center of the reaction gas.

[0007] Optionally, in the semiconductor device, the semiconductor device further includes a reaction chamber; the base, the gasket, and the preheating ring are all disposed in the reaction chamber; wherein,

[0008] The reaction chamber has opposite intake ports and outlet ports, so that the reaction gas flows with the connection line between the intake port and the outlet port as the flow center; and the plurality of self-aligning components are spaced apart and distributed on the sides of the connection line.

[0009] Optionally, in the semiconductor device, the preheating ring has an axisymmetric structure, and a symmetry axis of the preheating ring is parallel or coincident with the connection line; and the plurality of self-aligning components are symmetrically distributed relative to the symmetry axis.

[0010] Optionally, in the semiconductor device, the distance between two adjacent self-aligning components on the same side of the symmetry axis is less than or equal to the distance between two adjacent self-aligning components on both sides of the symmetry axis.

[0011] Optionally, in the semiconductor device, four self-aligning components are provided on the relative surfaces of the gasket and the preheating ring, and the angle between the connection line of each self-aligning component and the center of the preheating ring and the symmetry axis is 60°.

[0012] Optionally, in the semiconductor device, the plurality of self-aligning components are spaced apart and evenly distributed on the relative surfaces of the gasket and the preheating ring.

[0013] Optionally, in the semiconductor device, the self-aligning component includes a first aligning member and a second aligning member that are adapted to each other; the first aligning member is located on the top surface of the gasket, and the second aligning member is located on the surface of the preheating ring opposite to the gasket; and the first aligning member and the second aligning member are detachably connected.

[0014] Optionally, in the semiconductor device, the first aligning member includes a groove, and the second aligning member includes a protrusion; or, the first aligning member includes a protrusion, and the second aligning member includes a groove.

[0015] Optionally, in the semiconductor device, the base is located inside the annular structure formed by the gasket and the preheating ring and is spaced from the annular structure; wherein, the top surface of the preheating ring is lower than the top surface of the base, and the vertical distance range is: 0.9 mm to 1.1 mm.

[0016] Optionally, in the semiconductor device, the horizontal distance range between the inner ring side wall of the preheating ring and the side wall of the base is: 2.3 mm to 2.7 mm.

[0017] Compared with the prior art, the semiconductor device provided by the present utility model utilizes a plurality of self-aligning components to improve the connection stability between the preheating ring and the gasket, not only avoiding the position deviation of the preheating ring during the process, reducing the collision risk between the preheating ring and the base, but also facilitating the stability of the reaction temperature field center and improving the uniformity of thin film growth. Moreover, the distribution of each self-aligning component avoids the flow center of the reaction gas, effectively preventing the blockage of the flow of the reaction gas, thereby ensuring the uniform distribution of the gas flow density in the reaction gas flow field, further optimizing the uniformity of thin film growth and improving the process effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Those of ordinary skill in the art will understand that the provided drawings are used to better understand the present utility model and do not constitute any limitation to the scope of the present utility model.

[0019] Figure 1 is a schematic structural diagram of the position deviation of the preheating ring in the prior art.

[0020] Figure 2 is a schematic structural diagram of the preheating ring hitting the base in the prior art.

[0021] Figure 3 is a schematic structural diagram of the connection structure blocking the flow of the reaction gas in the prior art.

[0022] Figure 4 is a schematic horizontal distribution diagram of the self-aligning components in the embodiment of the present utility model.

[0023] Figure 5 is a schematic structural diagram of the semiconductor device in the embodiment of the present utility model.

[0024] Figure 6 is a schematic structural diagram of a self-aligning component in the embodiment of the present utility model.

[0025] Figure 7 is a schematic structural diagram of another self-aligning component in the embodiment of the present utility model.

[0026] Moreover, in the drawings:

[0027] 10 - preheating ring; 11 - wafer base; 12 - lower gasket; 13 - connection structure; 14 - pump body;

[0028] 20 - reaction chamber; 20a - intake port; 20b - outlet port; 201 - base; 202 - gasket; 203 - preheating ring; 204 - vacuum pump;

[0029] T - self - alignment component; t1 - first alignment component; t2 - second alignment component; G - horizontal spacing; L - vertical spacing; W - wafer; O - center of the ring; D1 - spacing between two adjacent self - alignment components on the same side of the axis of symmetry; D2 - spacing between two adjacent self - alignment components on both sides of the axis of symmetry; α - included angle; m1 - connecting line; m2 - connecting line between the self - alignment component and the center of the ring. Detailed implementation mode

[0030] To make the objectives, advantages, and features of the present utility model clearer, the following further elaborates on the present utility model in detail with reference to the accompanying drawings and specific embodiments. It should be noted that the accompanying drawings are in a very simplified form and not drawn to scale, only for facilitating and clearly assisting in explaining the objectives of the embodiments of the present utility model. In addition, the structures shown in the accompanying drawings are often part of the actual structures. In particular, the accompanying drawings need to show different focuses and sometimes use different scales. It should also be understood that unless otherwise specifically stated or indicated, the terms "first", "second", "third", etc. in the specification are only used to distinguish each component, element, step, etc. in the specification, rather than to represent the logical relationship or sequential relationship between each component, element, step, etc.

[0031] Moreover, the X - axis direction, Y - axis direction, and Z - axis direction referred to in the specification of this application are three mutually perpendicular directions in three - dimensional space. In the specification of this application, the horizontal direction refers to the X - axis direction, and the vertical direction refers to the Z - axis direction.

[0032] Please refer to Figure 4 and Figure 5 , this embodiment provides a semiconductor device, including: a base 201, a gasket 202, and a pre - heating ring 203; the base 201 is used to carry a wafer W; both the gasket 202 and the pre - heating ring 203 are arranged around the circumference of the base 201, and the pre - heating ring 203 is located on the top surface of the gasket 202 and is used to heat the reaction gas; wherein, a plurality of self - alignment components T are arranged on the opposite surfaces of the gasket 202 and the pre - heating ring 203 to define the position of the pre - heating ring 203 relative to the gasket 202; and, the plurality of self - alignment components T are distributed on the side of the flow center of the reaction gas.

[0033] It can be seen from this that the semiconductor device provided in this embodiment improves the connection stability between the preheating ring 203 and the gasket 202 by arranging a plurality of the self-aligning components T. It can not only avoid the position shift of the preheating ring 203 during the process, reduce the collision risk between the preheating ring 203 and the base 201, but also ensure the stability of the center of the reaction temperature field, which is beneficial to improving the uniformity of the semiconductor film layer. In addition, the distribution of each self-aligning component T avoids the flow center of the reaction gas to prevent blocking the flow of the reaction gas and ensure the uniform distribution of the gas flow density in the reaction gas flow field, further optimizing the uniformity of the semiconductor film layer.

[0034] The following will specifically describe the semiconductor device provided in this embodiment with reference to the attached Figures 4 to 7 drawings.

[0035] Please continue to refer to Figure 4 and Figure 5 drawings. The semiconductor device provided in this embodiment is applicable to various semiconductor thin film growth processes. Exemplarily, the semiconductor device is an epitaxial layer growth device. Specifically, the semiconductor device includes: a reaction chamber 20 and a base 201, a gasket 202, and a preheating ring 203 disposed in the reaction chamber 20. Among them, the reaction chamber 20 is used to provide a reaction space and a reaction environment required for thin film growth; the base 201 is a carrier for carrying the wafer W; the gasket 202 is used to support and connect the preheating ring 203; the preheating ring 203 is used to heat the reaction gas to fully activate it to meet the reaction conditions. In addition, a heating system, a detection system, and other structures well known to those skilled in the art are also provided in the reaction chamber 20 provided in this embodiment, which will not be elaborated here.

[0036] Further, both the gasket 202 and the preheating ring 203 are annular. The preheating ring 203 is disposed on the top surface of the gasket 202, and the base 201 is located inside the annular structure formed by the gasket 202 and the preheating ring 203. That is, the gasket 202 and the preheating ring 203 are disposed around the outer periphery of the base 201. Among them, both the gasket 202 and the preheating ring 203 are spaced from the base 201. The purpose is, on the one hand, to avoid affecting the lifting or rotation and other movement operations of the base 201 during the process, and on the other hand, to facilitate the full contact between the preheating ring 203 and the reaction gas and optimize its activation effect. Preferably, to ensure that the reaction gas after heating reacts fully with the wafer W on the substrate 201, the top surface of the preheating ring 203 is slightly lower than the top surface of the base 201, and the vertical distance L between the top surface of the preheating ring 203 and the top surface of the base 201 ranges from 0.9 mm to 1.1 mm. For example, it is 0.9 mm, 1.0 mm or 1.1 mm. And, the horizontal distance G between the inner ring sidewall of the preheating ring 203 and the sidewall of the base 201 ranges from 2.3 mm to 2.7 mm. For example, it is 2.3 mm, 2.5 mm or 2.7 mm. It should be noted that the specific morphologies of the gasket 202 and the preheating ring 203 are not limited in this embodiment. Optionally, the preheating ring 203 is a circular ring, an elliptical ring or an irregular ring, etc., and the morphology of the gasket 202 is adapted to that of the preheating ring 203.

[0037] Please refer to Figures 4 to 7 , because various reaction gases continuously flow through the preheating ring 203 during the process, the reaction gas will apply at least a horizontal force to the preheating ring 203. If the preheating ring 203 is displaced due to the force, resulting in changes in the vertical distance L and the horizontal distance G, it will not only cause changes in the centers of the reaction temperature field and the gas flow field, affecting the uniformity of film growth, but also increase the risk of the preheating ring 203 hitting the base 201, affecting the safety of the wafer W and the equipment. Therefore, the semiconductor device provided in this embodiment is provided with a plurality of self-aligning components T on the relative surfaces of the gasket 202 and the preheating ring 203 to define the position of the preheating ring 203 relative to the gasket 202 and improve the connection stability between the gasket 202 and the preheating ring 203.

[0038] Further, the self-alignment component T includes a first alignment member t1 and a second alignment member t2 that are adapted to each other; and the first alignment member t1 is located on the top surface of the gasket 202, and the second alignment member t2 is located on the surface of the preheating ring 203 opposite to the gasket 202. In other words, the first alignment member t1 and the second alignment member t2 are respectively formed on the surfaces of the gasket 202 and the preheating ring 203 in contact with each other, so as to limit and connect the preheating ring 203. Preferably, the first alignment member t1 and the second alignment member t2 are detachably connected, and the detachable connection includes but is not limited to snap connection or bonding, etc. Exemplarily, as Figure 6 shown, the first alignment member t1 is a groove, and the second alignment member t2 is a protrusion. Or, as Figure 7 shown, the first alignment member t1 is a protrusion, and the second alignment member t2 is a groove. The shapes of the protrusion and the groove are adapted to each other, and when the preheating ring 203 is located on the surface of the gasket 202, the protrusion is snapped into the groove.

[0039] It should be noted that, in order to realize the supply and flow of the reaction gas, the reaction chamber 20 has opposite intake ports 20a and outlet ports 20b, and an air extraction pump 204 is provided in the pipeline connected to the intake port 20a and / or the outlet port 20b, so that the reaction gas circulates with the connection line m1 between the intake port 20a and the outlet port 20b as the flow center. Therefore, as Figure 4 shown, in order to avoid blocking the flow of the reaction gas and causing an adverse impact on the gas flow field in the reaction chamber 20, a plurality of the self-alignment components T are spaced apart and distributed on the side of the connection line m1.

[0040] Further, in one example, a plurality of the self-alignment components T are spaced apart and evenly distributed on the opposite surfaces of the gasket 202 and the preheating ring 203 to enhance the limiting stability.

[0041] In another example, the preheating ring 203 has an axisymmetric structure, and a symmetry axis of the preheating ring 203 is parallel or coincident with the connection line m1, and the center O of the preheating ring 203 is located on the central axis of the base 201. Then, the reaction gas can flow along the symmetry axis of the preheating ring 203, and after being fully activated, it is evenly diffused to the surface of the wafer W to ensure better process effects. And, a plurality of the self-alignment components T are symmetrically distributed relative to the symmetry axis of the preheating ring 203. That is, as Figure 4The top view of the preheating ring 203 shown. Although the arc lengths between the self-aligning components T pairwise or the angles relative to the center O of the ring are not exactly the same, each of the self-aligning components T is symmetrically distributed along the connection line m1. When the reaction gas flows along the connection line m1, the parts on both sides of the symmetry axis of the preheating ring 203 are subject to equal forces, and the self-aligning components T distributed axially symmetrically can provide a uniform acting force to the preheating ring 203, so as to avoid the position deviation of the preheating ring 203 caused by uneven force, and thus facilitate improving the process effect. Also, preferably, the distance D1 between two adjacent self-aligning components T on the same side of the symmetry axis is less than or equal to the distance D2 between two adjacent self-aligning components T on both sides of the symmetry axis, so that the self-aligning components T are as far away as possible from the flow center of the reaction gas, avoiding blocking the air flow and affecting the process effect.

[0042] It should be noted that the specific number of the self-aligning components T in this embodiment is not limited and can be two, four, six, etc. However, based on the process effect and operation convenience, preferably, four self-aligning components T are provided on the relative surfaces of the gasket 202 and the preheating ring 203, and the angle α between the connection line m2 of each self-aligning component T and the center O of the preheating ring 203 and the symmetry axis is 60°. That is, as Figure 4 shown, the angle α between the connection line m1 and the connection line m2 is 60°. Based on this, the distance D2 between two adjacent self-aligning components T on both sides of the connection line m1 is greater than the distance D1 between two adjacent self-aligning components T on the same side of the connection line m1, which can, on the basis of stably connecting the preheating ring 203 and the gasket 202, avoid the flow center of the reaction gas as much as possible, avoid affecting the air flow field, and facilitate the uniform distribution of the reaction gas on the surface of the wafer W, so as to grow a film with better uniformity.

[0043] In summary, the semiconductor device provided in this embodiment uses multiple self-aligning components T to improve the connection stability between the preheating ring 203 and the gasket 202, not only avoiding the position deviation of the preheating ring 203 during the process, reducing the collision risk between the preheating ring 203 and the base 201, but also facilitating the stability of the center of the reaction temperature field and improving the uniformity of film growth. Also, the distribution of each self-aligning component T avoids the flow center of the reaction gas, effectively avoiding blocking the flow of the reaction gas, facilitating ensuring the uniform distribution of the air flow density in the reaction air flow field, further optimizing the uniformity of film growth, and improving the process effect.

[0044] It should also be recognized that although the present utility model has been disclosed above with preferred embodiments, the above embodiments are not intended to limit the present utility model. For any person skilled in the art, without departing from the scope of the technical solution of the present utility model, many possible changes and modifications can be made to the technical solution of the present utility model by using the technical content disclosed above, or it can be modified into equivalent embodiments with equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present utility model without departing from the content of the technical solution of the present utility model still belong to the scope protected by the technical solution of the present utility model.

Claims

1. A semiconductor device, characterized in that: include: A pedestal, a gasket and a preheating ring; the pedestal is used to carry a wafer; the gasket and the preheating ring are both arranged around the circumference of the pedestal, and the preheating ring is located on the top surface of the gasket and is used to heat the reaction gas; wherein, A plurality of self-aligning components are arranged on the opposing surfaces of the gasket and the preheating ring, for defining the position of the preheating ring relative to the gasket; and the plurality of self-aligning components are distributed on the side of the flow center of the reaction gas.

2. The semiconductor device according to claim 1, wherein: The semiconductor device further comprises a reaction chamber; the base, the liner and the preheating ring are all accommodated in the reaction chamber; wherein, The reaction chamber has an inlet port and an outlet port opposite to each other, so that the reaction gas flows with the connection line between the inlet port and the outlet port as the flow center; and the plurality of self-aligned components are distributed at intervals on the side of the connection line.

3. The semiconductor device according to claim 2, wherein: The preheating ring is an axisymmetric structure, and a symmetry axis of the preheating ring is parallel to or coincides with the connecting line; and the plurality of self-alignment components are symmetrically distributed relative to the symmetry axis.

4. The semiconductor device according to claim 3, characterized in that The distance between two adjacent self-alignment components located on the same side of the symmetry axis is less than or equal to the distance between two adjacent self-alignment components located on both sides of the symmetry axis.

5. The semiconductor device according to claim 3, wherein: Four self-alignment components are arranged on the opposing surfaces of the gasket and the preheating ring, and the angle between the line connecting each self-alignment component and the center of the preheating ring and the axis of symmetry is 60°.

6. The semiconductor device according to claim 1, wherein: The plurality of self-aligning components are arranged at intervals and are evenly distributed on the opposite surfaces of the pad and the preheating ring.

7. The semiconductor device according to any one of claims 1 to 6, characterized in that: The self-aligning assembly includes a first alignment member and a second alignment member that match each other; the first alignment member is located on the top surface of the gasket, and the second alignment member is located on the surface of the preheating ring opposite to the gasket; The first alignment member and the second alignment member are detachably connected.

8. The semiconductor device according to claim 7, wherein: The first alignment piece includes a groove, and the second alignment piece includes a protrusion; or the first alignment piece includes a protrusion, and the second alignment piece includes a groove.

9. The semiconductor device according to claim 1, wherein: The base is located inside the annular structure formed by the gasket and the preheating ring, and is spaced apart from the annular structure; wherein the top surface of the preheating ring is lower than the top surface of the base, and the vertical spacing ranges from 0.9 mm to 1.1 mm.

10. The semiconductor device according to claim 9, characterized in that The horizontal spacing between the inner ring side wall of the preheating ring and the side wall of the base ranges from 2.3 mm to 2.7 mm.

Images