Package and optical device

Abstract

An embodiment of the present disclosure provides a package including an optical engine attached to a package substrate, where the optical engine includes a first waveguide; and a waveguide structure attached to the package substrate adjacent to the optical engine, where the waveguide structure includes a second waveguide located within a transparent block, where a first end of the second waveguide is optically coupled to the first waveguide, where the waveguide structure is configured to connect to an optical fiber component, where the first end of the second waveguide is optically coupled to the first waveguide. A second end portion of the second waveguide is optically coupled to an optical fiber of the optical fiber component.

Description

Technical Field

[0001] The present utility model relates to a semiconductor technology, and more particularly to a package, an optical device, and a method for forming the same. Background Art

[0002] Transmission and processing of electronic signals are technologies for signal transmission and processing. In recent years, optical signal transmission and processing have been used in more and more applications, especially due to the use of fiber optic related applications for signal transmission.

[0003] Optical signal transmission and processing are usually combined with electronic signal transmission and processing to provide mature applications. For example, optical fibers can be used for long-distance signal transmission, while electronic signals can be used for short-distance signal transmission and processing and control. Therefore, devices integrating optical components and electronic components are formed for the conversion between optical signals and electronic signals and the processing of optical signals and electronic signals. Thus, a package may include an optical (photon) die having an optical device and an electronic die having an electronic device. Summary of the Utility Model

[0004] In some embodiments, a package is provided, including: an optical engine attached to a package substrate, wherein the optical engine includes a first waveguide; and a waveguide structure attached to the package substrate adjacent to the optical engine, wherein the waveguide structure includes a second waveguide located in a transparent block, wherein a first end of the second waveguide is optically coupled to the first waveguide, and wherein the waveguide structure is configured to be connected to an optical fiber component such that a second end of the second waveguide is optically coupled to an optical fiber of the optical fiber component.

[0005] In some embodiments, it further includes an optical adhesive extending from a sidewall of the optical engine to a sidewall of the waveguide structure.

[0006] In some embodiments, the transparent block includes a plurality of lenses located in the transparent block, and the lenses are adjacent to corresponding ends of the second waveguide.

[0007] In some embodiments, the second waveguide is a laser direct writing waveguide.

[0008] In some embodiments, the second waveguide is optically coupled to the first waveguide through an edge coupler located in the optical engine.

[0009] In some embodiments, an optical device is provided, including: a photon package including a plurality of edge couplers; a glass block adjacent to the photon package, wherein the glass block includes a plurality of waveguides, each waveguide having a first end and a second end, wherein the first end of each waveguide is optically coupled to a corresponding edge coupler, and wherein the first end of each waveguide is closer to a lower surface of the glass block than the corresponding second end of the waveguide; and a fixture surrounding the glass block, wherein the fixture is configured to be connected to an optical fiber.

[0010] In some embodiments, the first ends of the waveguides have a first pitch, and the second ends of the waveguides have a second pitch greater than the first pitch.

[0011] In some embodiments, an auxiliary lens is further included and located on a sidewall of the glass block, wherein the auxiliary lens includes a plurality of lenses, and each of the lenses is optically coupled to a corresponding one of the waveguides.

[0012] In some embodiments, the first ends of the waveguides are arranged in a horizontal row.

[0013] In some embodiments, the second ends of the waveguides are arranged in a first horizontal row and a second horizontal row, the first horizontal row being at a first height above a lower surface of the glass block, and the second horizontal row being at a second height different from the first height above the lower surface of the glass block.

[0014] At least one embodiment of the present utility model has the following advantages or technical effects:

[0015] By forming a waveguide structure, optical components can integrate an optical engine. Moreover, it allows the transmission of optical power and / or optical signals between the optical feature components of the optical engine and the optical components. Additionally, using the waveguide structure described herein can allow for effective optical coupling over a smaller distance or in a more compact volume, which can reduce the package size. Description of the Drawings

[0016] Figures 1-9 Illustrates the fabrication of an optical package according to some embodiments.

[0017] Figure 10 Illustrates a photon package according to some embodiments.

[0018] Figure 11 and 12 Illustrates the fabrication of a waveguide structure according to some embodiments.

[0019] Figure 13 、 14, 15, 16, 17, 18, and 19 illustrate various schematic diagrams of waveguide structures according to some embodiments.

[0020] Figure 20 , 21 , 22, and 23 illustrate various schematic diagrams of waveguide structures with attached lenses according to some embodiments.

[0021] Figure 24 Illustrates a waveguide structure with an inscribed lens according to some embodiments.

[0022] Figure 25 Illustrates a photonics system according to some embodiments.

[0023] Figure 26 and 27 Illustrates the fabrication of a polymer waveguide according to some embodiments.

[0024] Where the reference numerals are explained as follows:

[0025] 100: Optical engine

[0026] 102: Buried oxide (BOX) substrate

[0027] 102A: Silicon layer

[0028] 102B: Oxide layer

[0029] 102C, 214: Substrate

[0030] 104, 304, 604: Waveguide

[0031] 106: Photonic component

[0032] 107: Edge coupler

[0033] 108, 115, 117, 121: Dielectric layer

[0034] 110: Photonic routing structure

[0035] 112, 216: Via electrode

[0036] 113: Contact

[0037] 114: Conductive component

[0038] 116: Conductive pad

[0039] 120: Redistribution structure

[0040] 122: Electronic die

[0041] 124: Die connector

[0042] 125: Support

[0043] 126: Dielectric material

[0044] 127: Adhesive layer

[0045] 200: Photonic package

[0046] 202: Semiconductor die

[0047] 204: Encapsulant layer

[0048] 210: Inner connection substrate

[0049] 212: Inner connection structure

[0050] 218,512: Conductive connector

[0051] 300: Waveguide structure

[0052] 300’: Transparent block

[0053] 301A: First side

[0054] 301B: Second side

[0055] 305A: First end

[0056] 305B: Second end

[0057] 320A: First auxiliary lens

[0058] 320B: Second auxiliary lens

[0059] 321: Laser direct writing process

[0060] 322A,322B,332A,332B: Lens

[0061] 324: Opening

[0062] 500: Photonic system

[0063] 504: Optical adhesive

[0064] 510: Encapsulation substrate

[0065] 520: Fixture

[0066] 522: Fiber optic connector

[0067] 602: Polymer material

[0068] 610: Laser direct writing device

[0069] PA: First pitch

[0070] PB: Second pitch. Detailed implementation

[0071] The following disclosure provides many different embodiments or examples for implementing different feature components of the present utility model. The following disclosure is a specific example of describing each component and its arrangement method to simplify the present disclosure. Of course, these are only examples and are not used to define the present utility model. For example, if the following disclosure describes forming a first feature component on or above a second feature component, it means that it includes an embodiment in which the formed first feature component and the second feature component are in direct contact, and also includes an embodiment in which additional feature components can be formed between the first feature component and the second feature component, so that the first feature component and the second feature component may not be in direct contact. In addition, the present disclosure will repeat reference numerals and / or words in various different examples. The repetition is for the purpose of simplification and clarity, rather than self-listing the relationship between the various different embodiments and / or configurations being discussed.

[0072] Spatial relative terms, such as "beneath", "below", "lower", "above", "upper", etc., are used herein to easily express the relationship between elements or feature components in the drawings illustrated in this specification and other elements or feature components. These spatial relative terms cover not only the orientations shown in the drawings but also different orientations during the use or operation of the device. This device can have different orientations (rotated 90 degrees or other orientations), and the spatial relative symbols used herein have corresponding explanations.

[0073] A photon system and a method for forming the same are provided. The photon system includes a waveguide structure integrating an optical fiber and an optical engine. The waveguide structure includes waveguides formed by direct laser writing in a transparent material. The direct laser writing waveguides transmit optical signals and / or optical power between the optical fiber and the photon components (such as optical engines, etc.) of the photon system. Using direct laser writing to form the waveguide structure can form a small structure for efficient optical coupling, thereby allowing flexible design and optical feature components with smaller pitch dimensions. The embodiments described herein will provide examples that can implement or use the subject matter of the present disclosure, and those of ordinary skill in the art will easily understand the modifications that can be made and will also be covered within the scope expected by different embodiments. In each schematic diagram and illustrative embodiment, the same reference numerals are used to represent the same components. Although method embodiments can be described in a specific order, other method embodiments can be carried out in any logical order.

[0074] Figures 1 to 9 Illustrates the formation of an optical engine 100 according to some embodiments (refer to Figure 9) Schematic cross - sectional view of an intermediate step. In some embodiments, the optical engine 100 can serve as an input / output (I / O) interface between optical signals and electrical signals. One or more optical engines can be used in a photonics package, a photonics structure, a photonics system, or the like. For example, one or more optical engines 100 can be used in a photonics system of a photonics package 200 as described below for Figure 10 the photonics system, in a photonics system 500 as described below for Figure 25 the photonics system, in other embodiments described herein, or the like. In some embodiments, multiple optical engines 100 are formed on the same substrate (e.g., Figure 1 substrate 102), and then subsequently divided into individual optical engines 100.

[0075] First, please refer to Figure 1 , according to some embodiments, a buried oxide ("buried oxide, BOX") substrate 102 is provided. The buried oxide (BOX) substrate 102 includes an oxide layer 102B formed above the substrate 102C and a silicon layer 102A formed above the oxide layer 102B. For example, the substrate 102C can be a material such as glass, ceramic, dielectric material, semiconductor, etc., or a combination thereof. In some embodiments, the substrate 102C can be a semiconductor substrate (e.g., a bulk semiconductor or the like), which can be doped (e.g., using p - type or n - type dopants) or undoped. The substrate 102C can be a wafer, such as a silicon wafer (e.g., a 12 - inch silicon wafer). Other substrates can also be used, such as multi - layer or graded substrates. In some embodiments, the semiconductor material of the substrate 102C can include silicon; germanium; compound semiconductors (including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide); alloy semiconductors (including silicon germanium, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and / or GaInAsP); or a combination thereof. For example, the oxide layer 102B can be silicon oxide or the like. In some embodiments, the oxide layer 102B can have a thickness of about between 0.5 μm and 4 μm. In some embodiments, the silicon layer 102A can have a thickness of about between 0.1 μm and 1.5 μm. Other thicknesses or materials are also possible. The buried oxide (BOX) substrate 102 can be referred to as having a front side or front surface (e.g., Figure 1 the side with the mid - plane facing up) and a back side or back surface (e.g., Figure 1 the side with the mid - plane facing down).

[0076] In Figure 2In accordance with some embodiments, the patterned silicon layer 102A is formed to create silicon regions for the waveguide 104, the photonic component 106, and / or the edge coupler 107. The silicon layer 102A can be patterned using suitable optical lithography and etching techniques. For example, in some embodiments, a hard mask layer (e.g., a nitride layer or other dielectric material, not shown in Figure 2 ) can be formed over the silicon layer 102A and patterned. The pattern of the hard mask layer can then be transferred to the silicon layer 102A using one or more etching techniques, such as dry etching and / or wet etching techniques. For example, the silicon layer 102A can be etched to form a trench that defines the waveguide 104, where the sidewalls of the remaining non-sunken portion define the sidewalls of the waveguide 104. In some embodiments, more than one optical lithography and etching sequence can be used to pattern the silicon layer 102A. One waveguide 104 or multiple waveguides 104 can be patterned from the silicon layer 102A. If multiple waveguides 104 are formed, the multiple waveguides 104 can be separate, discrete waveguides 104 or connected into a single continuous structure. In some embodiments, one or more waveguides 104 form a continuous loop. The waveguide 104, the photonic component 106, or the edge coupler 107 can also have other configurations or arrangements. In some cases, the waveguide 104, the photonic component 106, and the edge coupler 107 can be collectively referred to as the "photonic layer".

[0077] In some embodiments, the photonic component 106 can be integrated with the waveguide 104 and can be formed together with the silicon waveguide 104. The photonic component 106 can be physically and / or optically coupled to the waveguide 104 to interact with the optical signal within the waveguide 104. For example, the photonic component 106 can include a photodetector, a modulator, and the like. For example, the photodetector can be optically coupled to the waveguide 104 to detect the optical signal within the waveguide 104 and generate an electrical signal corresponding to the optical signal. The modulator can be optically coupled to the waveguide 104 to receive an electrical signal and generate a corresponding optical signal within the waveguide 104 by modulating the optical power within the waveguide 104. In this way, the photonic component 106 can facilitate the input / output (I / O) of optical signals to and from the waveguide 104. In other embodiments, the photonic component can include other active or passive components, such as a laser diode, an LED, an optical signal splitter, a phase shifter, a resonator, an amplifier, an optical cavity, an evanescent coupler, a grating coupler, or other types of structures or devices. For example, optical power can be provided to the waveguide 104 through an optical fiber (not shown in Figures 1-9 ) coupled to an external light source (e.g., through the edge coupler 107 or the grating coupler), or optical power can be provided by the optical engine 100 (e.g., a laser diode or the like (not shown inFigures 1-9 ) The photon components within are provided to waveguide 104. In some embodiments, optical power and / or optical signals can be transferred from an adjacent optical engine, photon package, photon structure, photon system, photon component, or the like to waveguide 104.

[0078] In some embodiments, photon component 106 (e.g., a photodetector) can be formed by locally etching multiple regions of waveguide 104 and growing epitaxial material on the remaining silicon in the etched regions. Acceptable optical lithography and etching techniques can be used to etch waveguide 104. The epitaxial material can include semiconductor materials (e.g., germanium (Ge) or the like), which can be doped or undoped. In some embodiments, an implantation process can be performed to introduce dopants (e.g., p-type dopants, n-type dopants, or a combination) into the silicon within the etched regions or into the epitaxial material. In some embodiments, photon component 106 (e.g., a modulator) can be formed by locally etching multiple regions of waveguide 104 and then implanting appropriate dopants (e.g., p-type dopants, n-type dopants, or a combination) into the remaining silicon in the etched regions within waveguide 104. Acceptable optical lithography and etching techniques can be used to etch waveguide 104. In some embodiments, the etched regions for the photodetector and the etched regions for the modulator can be formed using one or more identical optical lithography or etching steps. In some embodiments, the etched regions for the photodetector and the etched regions for the modulator can be implanted using one or more identical implantation steps. It can also be other photon components 106 and other manufacturing steps.

[0079] In some embodiments, one or more edge couplers 107 can be integrated with waveguide 104 and can be formed together with waveguide 104. Edge coupler 107 and waveguide 104 can be continuous and can be formed in the same process steps as waveguide 104 or other photon components 106. Edge coupler 107 allows optical signals and / or optical power to be transferred between waveguide 104 and an optical or photon component (which is adjacent to the sidewall of optical engine 100). For example, edge coupler 107 can be optically coupled to, for example, another waveguide (e.g., waveguide 304 described below), another optical engine, another photon package, another photon system, an optical fiber, an external laser diode, or a similar component. Optical engine 100 can include a single edge coupler 107 or multiple edge couplers 107. In some embodiments, acceptable optical lithography and etching techniques can be used to form coupler 107. In some embodiments, the same optical lithography or etching steps as those for waveguide 104 and / or photon component 106 can be used to form coupler 107. In other embodiments, coupler 107 is formed after waveguide 104 and / or photon component 106 are formed.

[0080] InFigure 3 In accordance with some embodiments, a dielectric layer 108 is formed on the front side of a buried oxide (BOX) substrate 102 to form a photon routing structure 110. The dielectric layer 108 is formed over the waveguide 104, photon components 106, edge coupler 107, and oxide layer 102B. The dielectric layer 108 may be formed of one or more layers composed of silicon oxide, silicon nitride, combinations thereof, or the like, and may be formed by CVD, PVD, atomic layer deposition (ALD), spin-on-dielectric processes, similar processes, or combinations thereof. In some embodiments, the dielectric layer 108 may be formed by high density plasma chemical vapor deposition (HDP-CVD), flowable CVD (FCVD) (e.g., CVD-like material deposition and post-curing in a remote plasma system to convert one material to another, such as an oxide), similar depositions, or combinations thereof. Other dielectric materials formed by any acceptable process may also be used. In some embodiments, a planarization process (e.g., CMP process, grinding process, or similar process) may then be used to planarize the dielectric layer 108. In some embodiments, the dielectric layer 108 may be formed to have a thickness between about 50 nm and 500 nm over the oxide layer 102B, or may be formed to have a thickness between about 10 nm and 200 nm over the waveguide 104. Other thicknesses are also possible.

[0081] Due to the different refractive indices of the materials of the waveguide 104 and the dielectric layer 108, the waveguide 104 has high internal reflection, such that light is substantially confined within the waveguide 104, depending on the wavelength of the light and the refractive index of the corresponding materials. In one embodiment, the refractive index of the material of the waveguide 104 is higher than the refractive index of the material of the dielectric layer 108. For example, the waveguide 104 may include silicon, and the dielectric layer 108 may include silicon oxide and / or silicon nitride. In other embodiments, the waveguide 104 may be formed of silicon nitride or the like. Other materials are also possible.

[0082] In Figure 4 In accordance with some embodiments, via electrodes 112 and contacts 113 are formed. The via electrodes 112 extend into the substrate 102C and allow for electrical connections to be formed on the back side of the optical engine 100. The contacts 113 allow for the transmission of electrical signals and / or power to and from the appropriate photon components 106. In this manner, the photon components 106 may receive electrical signals (e.g., from the electronic die 122, see Figure 7) is converted into an optical signal transmitted by waveguide 104, or photon component 106 can convert the optical signal in waveguide 104 into an electrical signal (e.g., which can be received by electronic die 122). For example, via holes electrodes 112 and / or contacts 113 can be formed by forming openings (not shown individually) in dielectric layer 108. According to some embodiments, the openings for forming via holes electrodes 112 can then extend through dielectric layer 108, through oxide layer 102B, and into local substrate 102C. The openings can be fabricated by acceptable optical lithography and etching techniques, such as by forming and patterning a photoresist and then using the patterned photoresist as an etch mask to perform an etching process. The etching process can include, for example, a dry etching process and / or a wet etching process. The openings for via holes electrodes 112 and the openings for contacts 113 can be formed separately or can be formed using one or more simultaneous steps.

[0083] According to some embodiments, a conductive material is then deposited within the opening to form the via electrode 112 and the contact 113. In some embodiments, a liner (not shown), such as a diffusion barrier layer, an adhesion layer, or the like, may be deposited within the opening first. The liner may include, for example, tantalum nitride, tantalum (Ta), titanium nitride, titanium (Ti), cobalt tungsten, or the like, and may be formed using a suitable deposition process (e.g., CVD, PVD, ALD, or similar depositions). In some embodiments, the via electrode 112 and / or the contact 113 may be formed by depositing a seed layer (not shown) within the opening. If a liner exists, the seed layer may be deposited on the liner. In some embodiments, the seed layer may include copper, a copper alloy, or the like. Then, ECP or electroless plating may be used to form the conductive material within the opening. The conductive material may include a metal or a metal alloy, such as copper, silver, gold, tungsten, cobalt, ruthenium, aluminum, or an alloy thereof. A planarization process (e.g., a CMP process or a grinding process) may be performed to remove the excess conductive material along the upper surface of the dielectric layer 108, such that the upper surfaces of the via electrode 112, the contact 113, and / or the dielectric layer 108 are flush. This is an example, and any suitable technique may be used to form the via electrode 112 and / or the contact 113, such as by damascene processes (e.g., single damascene or dual damascene), similar processes, or another process. The contact 113 may be formed before or after the via electrode 112 is formed, and some steps, such as the deposition and / or planarization of the conductive material, may be shared between the fabrication of the contact 113 and the fabrication of the via electrode 112. In other embodiments, other techniques or materials may be used to form the via electrode 112 and the contact 113. The via electrode 112 and the contact 113 may be formed using similar techniques or materials or different techniques or materials. More or fewer via electrodes 112 or contacts 113 than those shown in the figures may be formed, and in some other embodiments, the via electrode 112 is not formed.

[0084] In Figure 5 , according to some embodiments, a redistribution structure 120 is formed above the dielectric layer 108. The redistribution structure 120 includes one or more dielectric layers 117 and conductive components 114 formed within the dielectric layers 117 to provide internal connections and electrical wiring. For example, the redistribution structure 120 may connect the via electrode 112, the contact 113, and / or an upper device (e.g., an electronic die 122 (please refer to Figure 7). In some other embodiments, the redistribution structure 120 may be electrically connected to the photon component 106 instead of the contact 113, or the contact 113 may be regarded as part of the redistribution structure 120. The dielectric layer 117 may be an insulating layer or a passivation layer, and may include one or more materials similar to the dielectric layer 108, such as silicon oxide or silicon nitride, or may include different materials. In some embodiments, the dielectric layer 117 and the dielectric layer 108 may be transparent or nearly transparent to light in the same wavelength range. The dielectric layer 117 may be formed using techniques similar to those of the dielectric layer 108 or using different techniques. The conductive component 114 may include wires and via electrodes, and may be formed by a damascene process (e.g., single damascene, dual damascene), a similar process, or another process. As Figure 5 shown, the conductive pad 116 may be formed in the topmost layer of the dielectric layer 117. After forming the conductive pad 116, a planarization process (e.g., a CMP process or a similar process) may be performed such that the surfaces of the conductive pad 116 and the topmost dielectric layer 117 are substantially coplanar (e.g., flush). The redistribution structure 120 may include more or fewer dielectric layers 117, conductive components 114, or conductive pads 116 than Figure 6 shown, and may have different arrangements or configurations. In some embodiments, the redistribution structure 120 may be formed to have a thickness of approximately between 4 μm and 6 μm. Other thicknesses may also be possible.

[0085] In Figure 6 , according to some embodiments, a portion of the redistribution structure 120 is removed and replaced by the dielectric layer 115. For example, acceptable optical lithography and etching techniques may be used to remove a portion of the redistribution structure 120, such as by forming a photoresist and patterning it, and then using the patterned photoresist as an etching mask to perform an etching process to remove the dielectric layer 117. The etching process may include a dry etching process and / or a wet etching process. In some embodiments, removing a portion of the redistribution structure 120 may expose the dielectric layer 108. In other embodiments, after removing a portion of the redistribution structure 120, the dielectric layer 108 may remain covered by one or more dielectric layers 117.

[0086] After the redistribution structure of the removed portion, a dielectric layer 115 can then be deposited to replace the removed portion of the redistribution structure 120. The dielectric layer 115 can include one or more materials (similar to the materials previously described for the dielectric layer 108, such as silicon oxide or silicon nitride) or can include different materials. The dielectric layer 115 can be formed using techniques similar to those of the dielectric layer 108 described above or using different techniques. In some embodiments, a planarization process (e.g., a CMP or grinding process) is used to remove the excess material of the dielectric layer 115. The planarization process can also expose the conductive pads 116. After the planarization process, the dielectric layer 115, the topmost dielectric layer 117, and / or the conductive pads 116 can have a substantially flush surface. In some cases, replacing part of the redistribution structure 120 with the dielectric layer 115 can improve the optical confinement in the waveguide 104 below the dielectric layer 115. In other embodiments, the redistribution structure 120 is not etched and the dielectric layer 115 is not formed. In other embodiments, the redistribution structure 120 is etched to separate the redistribution structure 120 into multiple spaced-apart regions.

[0087] In Figure 7 , according to some embodiments, one or more electronic dies 122 are bonded to the redistribution structure 120. The electronic die 122 can be a semiconductor device, die, or wafer that communicates with the photonics component 106 using electrical signals. Figure 7 An electronic die 122 is illustrated, however, in other embodiments, the optical engine 100 can include two or more electronic dies 122. In some cases, multiple electronic dies 122 can be incorporated within a single optical engine 100 in order to reduce process costs. The electronic die 122 can include die connectors 124, which can be conductive pads, conductive pillars, or the like.

[0088] The electronic die 122 may include an integrated circuit for connection to the photonics component 106, such as a circuit for controlling the operation of the photonics component 106. For example, the electronic die 122 may include a controller, a driver, transimpedance amplifiers, or the like, or a combination thereof. The electronic die 122 may also include a CPU. In some embodiments, the electronic die 122 includes circuitry for processing electrical signals received from the photonics component 106, such as for processing electrical signals received from the photonics component 106 having a photodetector. In some embodiments, the electronic die 122 may control the high-frequency signal transmission of the photonics component 106 based on electrical signals (digital or analog) received from another device or die. In some embodiments, the electronic die 122 may be an electronic integrated circuit (EIC) or the like that provides Serializer / Deserializer (SerDes) functionality. In this manner, the electronic die 122 may serve as part of the input / output (I / O) interface between optical and electrical signals within the optical engine 100, and the optical engine 100 described herein may be considered a system-on-chip (SoC) device or a system-on-integrated-circuit (SoIC) device.

[0089] In some embodiments, the electronic die 122 is bonded dielectric-to-dielectric and / or metal-to-metal (e.g., direct bonding, fusion bonding, oxide-to-oxide bonding, hybrid bonding, or similar bonding) through a dielectric material. In the above embodiments, covalent bonds may form between the bonding layers, such as the topmost dielectric layer 117 of the electronic die 122 and a surface dielectric layer (not individually labeled). The bonding layer may be an oxide layer or other dielectric material layer. During bonding, metal-to-metal bonding may also occur between the die connector 124 of the electronic die 122 and the conductive pad 116 of the redistribution structure 120. In other embodiments, solder bonding, solder bumps, or the like may be used to bond the electronic die 122 to the redistribution structure 120.

[0090] In Figure 8In accordance with some embodiments, a dielectric material 126 is formed over the electronic die 122 and the redistribution structure 120. The dielectric material 126 can be formed of silicon oxide, flowable oxide, glass, silicon nitride, polymer, the like, or a combination thereof. The dielectric material 126 can be formed by CVD, PVD, ALD, spin coating processes, the like, or a combination thereof. In some embodiments, the dielectric material 126 can be formed by HDP-CVD, FCVD, the like, or a combination thereof. In some embodiments, the dielectric material 126 can be a gap-fill material, which can include one or more of the above example materials. Other dielectric materials formed by any acceptable process can also be used. A planarization process (e.g., CMP process, grinding process, or the like) can be used to planarize the dielectric material 126. In some embodiments, the planarization process can expose the electronic die 122 such that the surface of the electronic die 122 is substantially coplanar with the surface of the dielectric material 126. Here, the oxide layer 102B, the dielectric layer 108, the dielectric layer 115, and the dielectric material 126 can be collectively referred to as the dielectric layer 121.

[0091] In Figure 9 In accordance with some embodiments, a selective support 125 is attached to the above structure. The support 125 is attached to the above structure to provide structural or mechanical stability. The use of the support 125 can reduce warping or bending, which can improve the performance of optical structures (e.g., the waveguide 104 or the photon component 106). The support 125 can include one or more materials, such as silicon (e.g., silicon wafer, bulk silicon, or the like), silicon oxide, silicon oxynitride, silicon carbonitride, metal, organic core material, the like, or other types of materials. An adhesive layer 127 or the like can be used to attach the support 125 to the above structure (e.g., attach to the dielectric material 126 and / or the electronic die 122). In other embodiments, direct bonding (e.g., dielectric material to dielectric material bonding, fusion bonding, or the like) or other suitable techniques can be used to attach the support 125. The support 125 can also have a lateral dimension (e.g., length, width, and / or area) that is greater than, approximately the same as, or less than the underlying structure. In other embodiments, during the fabrication of the optical engine 100, the attachment of the support 125 is later than the process steps shown. In some embodiments, the support 125 can subsequently be thinned using a CMP process, a grinding process, or the like. Furthermore, in Figure 9 In accordance with some embodiments, the backside of the substrate 102C can be thinned to expose the via electrode 112. A CMP process, a grinding process, an etching process, the like, or a combination thereof can be used to thin the substrate 102C.

[0092] In Figure 10In accordance with some embodiments, the optical engine 100 may be selectively attached to the inner connection substrate 210 to form the photon package 200. In some embodiments, the inner connection substrate 210 may include an inner connection structure 212 on a substrate 214. The inner connection substrate 210 may also have a via electrode 216 extending through the substrate 214, and the via electrode 216 is electrically connected to the inner connection structure 212. Figure 10 The inner connection substrate 210 shown is an example and may also be other inner connection substrates or their configurations. In some embodiments, the inner connection substrate 210 may be regarded as an interposer or the like. In some embodiments, the inner connection substrate 210 may include passive or active devices. In other embodiments, more than one optical engine 100 may be attached to the inner connection substrate 210. In other embodiments, one or more semiconductor dies 202 may also be attached to the inner connection substrate 210, as described in more detail below. Figure 10 The photon package 200 shown is an example and may also be other photon packages or their configurations.

[0093] The substrate 214 of the inner connection substrate 210 may include, for example, a glass substrate, a ceramic substrate, a dielectric substrate, an organic substrate (e.g., an organic core), a semiconductor substrate (e.g., a semiconductor wafer), the like, or a combination thereof. The via electrode 216 extends through the substrate 214, and the via electrode 216 may be formed using materials or techniques similar to those of the via electrode 112 or using different materials or techniques.

[0094] In some embodiments, the inner connection structure 212 of the inner connection substrate 210 includes a dielectric layer and conductive components formed within the dielectric layer. The inner connection structure 212 provides inner connection and electrical wiring and may be electrically connected to the via electrode 216 and / or the via electrode 112. The dielectric layer may be an insulating layer or a passivation layer and may include materials similar to the dielectric layer 108 or the dielectric layer 117. For example, the dielectric layer of the inner connection structure 212 may include, for example, silicon oxide, silicon nitride, or similar materials. The conductive components of the inner connection structure 212 may include wires and via electrodes, and the conductive components of the inner connection structure 212 may be formed using materials or techniques similar to those of the conductive component 114 or using different materials or techniques. For example, a damascene process (e.g., dual damascene, single damascene, or a similar process) may be used to form the conductive components of the inner connection structure 212.

[0095] In some embodiments, the optical engine 100 is joined by dielectric-to-dielectric and / or metal-to-metal joining (e.g., direct bonding, fusion bonding, oxide-to-oxide bonding, hybrid bonding, or similar joining). For example, the back side of the optical engine 100 (e.g., the back side of the substrate 102C) may be joined to the inner connection structure 212. In some embodiments, the vias electrodes 112 of the optical engine 100 are joined to the conductive components of the inner connection structure 212 to physically and electrically connect the optical engine 100 to the inner connection substrate 210. In some embodiments, a bonding layer may be formed on the back side of the substrate 102C prior to joining to the inner connection substrate 210. In other embodiments, the optical engine 100 may be joined to the inner connection substrate 210 using solder bonding, solder bumps, or the like.

[0096] In some embodiments, in addition to the optical engine 100, the photonics package 200 may also include one or more semiconductor dies 202 connected to the inner connection substrate 210. For example, Figure 10Illustrates a photonics package 200 having a single semiconductor die 202 according to some embodiments. The one or more semiconductor dies 202 may include, for example, wafers, dies, system-on-chip (SoC) devices, system-integrated circuit (SoIC) devices, packages, the like, or combinations thereof. The semiconductor die 202 may include one or more processing devices, such as a central processing unit (CPU), a graphics processing unit (GPU), an application-specific integrated circuit (ASIC), a high-performance computing (HPC) die, the like, or combinations thereof. The semiconductor die 202 may include one or more memory devices, which may be volatile memory, such as dynamic random-access memory (DRAM), static random-access memory (SRAM), high-bandwidth memory (HBM), another type of memory, or similar memory. The one or more semiconductor dies 202 may be attached to the interconnect structure 212 of the interconnect substrate 210 using direct bonding, solder bumps, or the like. In this way, the semiconductor die 202 is electrically connected to the interconnect substrate 210 and may be electrically coupled to the one or more optical engines 100 through the interconnect substrate 210. In some embodiments, an encapsulation layer 204 may be deposited thereon and / or between the optical engine 100 and the semiconductor die 202. The encapsulation layer 204 may be, for example, a molding material, an epoxy resin, a polymer, or the like.

[0097] In some embodiments, according to some embodiments, a conductive connector 218 is formed on the interconnect substrate 210. The conductive connector 218 is electrically connected to the interconnect substrate 210 via a via electrode 216. In some embodiments, the conductive connector 218 includes a conductive pad formed on the via electrode 216 and the substrate 214. The conductive pad may be, for example, an aluminum pad or an aluminum-copper pad, but other metal pads may also be used. In some embodiments, the conductive pad may include an underbump metallization (UBM).

[0098] In some embodiments, the conductive connector 218 may include solder balls, solder bumps, or the like formed on a conductive pad. For example, the conductive connector 218 may include a ball grid array (BGA) connector, solder balls, metal pillars, controlled collapse chip connection (C4) bumps, micro bumps, bumps formed by electroless nickel - electroless palladium - immersion gold technique (ENEPIG), or the like. The conductive connector 218 may include a conductive material such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, the like, or a combination thereof. In some embodiments, the fabrication of the conductive connector 218 may initially form a solder layer by common methods (e.g., evaporation plating, electroplating, printing, solder transfer, ball placement, similar methods). Once the solder layer is formed structurally, reflow may be performed to shape the material into the desired bump shape. In another embodiment, the conductive connector 218 includes metal pillars (e.g., copper pillars) formed by sputtering, printing, electroplating, electroless plating, CVD, or similar methods. The metal pillars may be solder - free and have substantially vertical sidewalls. In some embodiments, a metal capping layer (not shown) is formed on top of the conductive connector 218. The metal capping layer may include nickel, tin, tin - lead, gold, silver, palladium, indium, nickel - palladium - gold, nickel - gold, the like, or a combination thereof, and may be formed by an electroplating process.

[0099] Figure 11 and 12 FIG. shows a cross - sectional schematic diagram of an intermediate step of forming a waveguide structure 300 according to some embodiments. According to some embodiments, the waveguide structure 300 is a structure that provides an optical coupling between a waveguide (e.g., waveguide 104 of the optical engine 100) and an external optical component (e.g., Figure 25 the fiber optic connector 522 or the like). The waveguide structure 300 can be used, for example, to provide an optical coupling within a photonics system, such as the photonics system 500 or the like described below for Figure 25 FIG. Figure 13 , 14 , 15, 16, 17, 18, and 19 show various schematic diagrams of an exemplary waveguide structure 300 similar to the embodiment shown in Figure 12 FIG. The waveguide structure 300 shown in Figures 13-19 FIG. is intended as a non - limiting example, and in other embodiments, there may also be a waveguide structure 300 (and waveguide 304 therein) having other configurations or arrangements.

[0100] Figure 11A cross-sectional schematic diagram of a transparent block 300’ according to some embodiments is shown. Subsequently, one or more waveguides 304 are formed within the transparent block 300’ using a laser direct writing process or a similar method, which will be described in more detail below for Figure 12 . Thus, the material of the transparent block 300’ may include materials suitable for laser direct writing (e.g., borosilicate glass, soda-lime-silica glass, fluoride glass (e.g., fluoro-zirconate glass or the like), other types of glass, high-silica (e.g., silica-based) materials, polymers, or the like). The material of the transparent block 300’ may be transparent to an appropriate laser wavelength. In some cases, the transparent block 300’ may be regarded as a “waveguide substrate” or a “glass block”. In some embodiments, the transparent block 300’ may be formed as a single workpiece using a suitable technique (e.g., a glass molding process or a similar method). Forming the transparent block 300’ using a glass molding process or a similar method may allow for design flexibility, improved structural stability, cost reduction, and / or size reduction of the photonics system. In other embodiments, other techniques may also be used to form the transparent block 300’.

[0101] Please refer to Figure 11 , the transparent block 300’ has a first side 301A and a second side 301B opposite to the first side 301A. The first and second sides 301A-B of the transparent block 300’ may be flat, concave, convex, irregular, stepped, or curved. In some embodiments, the transparent block 300’ has a length in the range of about 15 mm to 20 mm (e.g., the distance between the opposite ends 303A-B), but may also be other lengths. In some embodiments, the transparent block 300’ has a thickness in the range of about 1 mm to 2.5 mm, but may also be other thicknesses. In some embodiments, the transparent block 300’ has a flat upper surface and a flat lower surface, but may also have other surface profiles. In some cases, the dimensions of the transparent block 300’ may be determined according to the specifications, applications, or configurations of the photonics system in which it is used.

[0102] Figure 12 A cross-sectional schematic diagram of forming a waveguide 304 within the transparent block 300’ to form a waveguide structure 300 according to some embodiments is shown. The waveguide 304 may be fabricated using a laser direct writing process or a similar method, from Figure 12It is represented by the mid-infrared laser direct writing device 321. The laser direct writing process focuses the laser on a local area within the transparent block 300', thereby changing the properties of the local area in the material. For example, the laser can increase the refractive index of the local area relative to the adjacent area of the transparent block 300' (e.g., the non-laser direct written area). By performing the laser direct writing process along a path within the transparent block 300', a continuous laser direct written portion of the transparent block 300' can be formed, which serves as a waveguide (e.g., waveguide 304). Multiple laser direct writing processes can be performed to form a single or multiple waveguides 304 within the transparent block 300'. In some embodiments, the laser direct writing process for forming the waveguide 304 can be a femtosecond direct laser writing process or a similar process. In some embodiments, the size, shape, position, optical properties, or other properties of the waveguide 304 can depend on the material of the transparent block 300', or can be controlled by controlling parameters such as laser wavelength, laser pulse energy, focal spot size, laser intensity profile or phase profile, laser pulse width (e.g., duration), laser pulse repetition rate or duty cycle, laser direct writing path speed, laser direct writing direction, laser polarization, or other parameters.

[0103] As Figure 12 shown, the waveguide 304 formed by the laser direct writing process can extend from the first side 301A of the waveguide structure 300 to the second side 301B of the waveguide structure 300. In other words, each waveguide 304 can have a corresponding first end 305A located at or near the first side 301A and a corresponding second end 305B located at or near the second side 301B. The first and second ends 305A-B can be flush with (e.g., adjacent to) the corresponding first and second sides 301A-B or can be offset from the corresponding first and second sides 301A-B.

[0104] In some embodiments, the height of the first end 305A of each waveguide 304 above the lower surface is different from that of its second end 305B. For example, as Figure 12 shown, the first end 305A of the waveguide 304 is closer to the lower surface of the waveguide structure 300 than the corresponding second end 305B. In this way, forming the waveguide 304 using the laser direct writing process can allow for flexible configuration or arrangement of the waveguide 304 to facilitate proper optical coupling. Additionally, as Figure 12 shown in this and other figures, the waveguide 304 can be formed to have various different combinations of height, position, or arrangement within the waveguide structure 300.

[0105] Figure 13Shows a schematic view of the waveguide structure 300 towards the first side 301A, and Figure 14 shows a schematic view of the waveguide structure 300 towards the second side 301B. As Figures 13-14 shown, the first end 305A of the waveguide 304 has a different height from the second end 305B. The first end 305A and / or the second end 305B may have different arrangements. For example, Figure 13 shows the first end 305A arranged in a single row, while Figure 14 shows the second end 305B arranged in a double row with different heights. Figure 15 Shows a three-dimensional schematic view of the waveguide structure 300 similar to Figures 12-14 where the waveguide 304 is in a single row near the first side 301A and in multiple rows near the second side 301B. Other combinations of the waveguide 304 arranged in rows are also possible.

[0106] Please return to Figures 13-14 , in some embodiments, the first end 305A may have a first pitch PA, and the second end 305B may have a second pitch PB different from the first pitch PA. For example, in some embodiments, the first pitch PA may be in the range of about 10 μm to 125 μm, and the second pitch PB may be in the range of about 250 μm to 500 μm, but other pitches are also possible. The first end 305A may have the same diameter as or a different diameter from the second end 305B. In other words, the diameter of the waveguide 304 may be approximately constant along its length or may vary along its length. In some embodiments, the diameter of the waveguide 304 may be in the range of about 3 μm to 10 μm, but other diameters are also possible. In some embodiments, the configuration (e.g., pitch, height, diameter, etc.) of the first end 305A may correspond to the configuration of the edge coupler 107, and the configuration of the second end 305B may correspond to the fiber component, such that the waveguide 304 can be optically coupled to the edge coupler 107 and the fiber component. In this way, the waveguide structure 300 can provide optical coupling between optical feature components with different configurations (e.g., different sizes, pitches, heights, etc.) within a compact footprint, which can allow for a more efficient and smaller-sized photonics system. In other embodiments, the waveguide structure 300 may have other numbers of waveguides 304, and the first and second ends 305A-B may have other pitches, other heights, other numbers of rows, other diameters, or any other suitable arrangement. In some embodiments, the second side 301B may optionally include one or more openings (not shown) configured to receive alignment pins of a fiber optic connector or the like.

[0107] Figure 16A cross-sectional schematic diagram of a waveguide structure 300 according to some embodiments is shown. Figure 16 The waveguide structure 300 is similar to Figure 12 the waveguide structure shown, except that the first end 305A is at a first height and the second end 305B is at a second height. In other words, Figure 16 the first and second ends 305A-B of the waveguide 304 are arranged in a single row on each of the first and second sides 301A-B. In other embodiments, the first and second ends 305A-B may be arranged in two rows on each of the first and second sides 301A-B or in other numbers of rows on each of the first and second sides 301A-B.

[0108] Figure 17 A cross-sectional schematic diagram of a waveguide structure 300 according to some embodiments is shown. Figure 17 The waveguide structure 300 is similar to Figure 12 the waveguide structure shown, except that the waveguide 304 is curved rather than linear (e.g., straight). For example, Figure 17 the waveguide 304 has a vertical curvature between the first end 305A and the second end 305B. The waveguide 304 may have a curvature different from that shown in Figure 17 For example, in other embodiments, the waveguide 304 may be "S-shaped" or other shapes such that the first and second ends 305A-B are approximately parallel to the lower surface (e.g., perpendicular to the first and second sides 301A-B). In other embodiments, the waveguide 304 may follow other curved paths different from these examples. In some cases, forming the waveguide 304 with a curvature may allow for improved coupling between the first and second ends 305A-B and other optical feature components. In some cases, forming the waveguide 304 with a curvature may allow for a more dense arrangement of the waveguide 304 and may allow for more possible arrangements of the waveguide 304.

[0109] Figure 18 and 19 A plan view schematic diagram of a waveguide structure 300 according to some embodiments is shown. Figures 18-19 The waveguide structure 300 may be similar to Figure 12 the waveguide structure 300 shown. As shown in Figures 18-19 the first end 305A has a first pitch PA, the first pitch PA is less than the second pitch PB of the second end 305A, and the waveguide 304 has been formed to expand laterally (e.g., horizontally or transversely) from the first side 301A towards the second side 301B. In this way, the waveguide structure 300 can be regarded as a "fan-in" structure or "fan-out" structure for optical coupling and allows for optical coupling between optical feature components with different pitches or different arrangements. The waveguide 304 may be substantially straight (e.g., linear), as shown in Figure 18as shown in the schematic plan view, or can be laterally bent, such as Figure 19 as shown in the schematic plan view. In some embodiments, the waveguide structure 300 may include both straight and bent waveguides 304.

[0110] Figure 20 Illustrates a waveguide structure 300 having selective first and second auxiliary lenses (lens attachments) 320A and 320B according to some embodiments. The waveguide structure 300 may be similar to the previously described waveguide structure 300. The first auxiliary lens 320A having one or more lenses 322A may be attached to the first side 301A of the waveguide structure 300, and the second auxiliary lens 320B having one or more lenses 322B may be attached to the second side 301B of the waveguide structure 300. In other embodiments, only one of the first and second auxiliary lenses 320A-B is attached to the waveguide structure 300. The first and second auxiliary lenses 320A-B may be attached using an adhesive (e.g., optical glue), dielectric-to-dielectric bonding, a fastener, or using any other suitable technique.

[0111] The lenses 322A-B of the first and second auxiliary lenses 320A-B may be refractive lenses and may be convex, circular, spherical, elliptical, oval, annular, rectangular, cylindrical, or have another suitable shape. The lens 322A of the first auxiliary lens 320A may be similar to or different from the lens 322B of the second auxiliary lens 320B. In some embodiments, each lens 322A-B is located near the corresponding waveguide 304. For example, each lens 322A may be located near the corresponding first end 305A, and each lens 322B may be located near the corresponding second end 305B. The lenses 322A-B may allow for improved optical coupling between the waveguide 304 and other optical feature components. For example, in some embodiments, the lens 322A of the first auxiliary lens 320A may improve the optical coupling between the waveguide 304 and the corresponding edge coupler 107 of the optical engine 100, while the lens 322B of the second auxiliary lens 320B may improve the optical coupling between the waveguide 304 and the fiber optic connector 522 (please refer to Figure 25 ). In some cases, the use of the first and second auxiliary lenses 320A-B may improve the misalignment tolerance during alignment of the waveguide structure 300 and the optical feature components optically coupled thereto. In some cases, the use of the first and second auxiliary lenses 320A-B may eliminate the need for active alignment of the waveguide structure 300.

[0112] Figure 21 Illustrates a schematic diagram of the first auxiliary lens 320A according to some embodiments, and Figure 22Schematic diagram showing the second auxiliary lens 320B. In some cases, Figure 21 The schematic diagram can be similar to Figure 13 The schematic diagram, while Figure 22 The schematic diagram can be similar to Figure 14 The schematic diagram. As Figures 21-22 shown, the first auxiliary lens 320A may include one or more columns of lenses 322A, while the second auxiliary lens 320B may include one or more columns of lenses 322B. In some embodiments, the second auxiliary lens 320B may include one or more selective openings 324 configured to accommodate alignment pins for fiber optic connectors and the like. Figure 23 Three-dimensional schematic diagram showing the waveguide structure 300 having the first and second auxiliary lenses 320A-B according to some embodiments. Figure 23 The waveguide structure 300 and the three-dimensional schematic diagram are similar to Figure 15 wherein the waveguide 304 is single-column near the first side 301A and multi-column near the second side 301B. There may also be other arrangements of the lenses 322A-B or the waveguide 304.

[0113] Figure 24 Schematic diagram showing the waveguide structure 300 having the selective laser direct writing lenses 332A-B according to some embodiments. The waveguide structure 300 may be similar to the waveguide structure 300 described previously. The lenses 332A-B may be, for example, diffractive optical structures or the like formed within the transparent block 300' using a laser direct writing process. In some cases, the lenses 322A-B may be regarded as "printed lenses". In some embodiments, a laser direct writing process similar to (or the same as) the laser direct writing process for forming the waveguide 304 may be used to form the lenses 332A-B. The lens 332A may be formed at or near the first end 305A of the waveguide 304, while the lens 332B may be formed at or near the second end 305B of the waveguide 304. In other embodiments, the lenses 332A-B are only formed at one end of the waveguide 304. The lenses 322A-B may be adjacent to the waveguide 304 or may be separated from the waveguide 304, as Figure 24 shown. The lens 332A of the waveguide structure 300 may be similar to or different from the lens 332B of the waveguide structure 300. In some embodiments, both the first and second auxiliary lenses 320A-B and the lenses 332A-B may be utilized. In the above embodiments, the first and second auxiliary lenses 320A-B and the lenses 332A-B may be present on the same side of the waveguide structure 300 or on two opposite sides of the waveguide structure 300. There may also be other combinations of the first and second auxiliary lenses 320A-B and the lenses 332A-B. The lenses 332A-B can provide improved optical coupling between the waveguide 304 and other optical feature components (such as the edge coupler 107 or other optical components) and can allow for a greater misalignment tolerance.

[0114] Figure 25 Illustrates a photonics system 500 according to some embodiments. The photonics system 500 includes a photonics package 200 that is optically coupled to a waveguide structure 300, which may be similar to the waveguide structure 300 described above. The waveguide structure 300 may be configured to optically couple an optical fiber component 522 to the photonics package 200. For example, in some embodiments, the optical fiber component 522 may be optically coupled to the edge coupler 107 of the optical engine 100 through the waveguide 304 of the waveguide structure 300. In some embodiments, the photonics system 500 includes a selective cover 512. The various characteristic components of the various embodiments of the photonics system, optical engine, photonics package, or waveguide structure described herein may be combined or reconfigured in other ways than those shown in Figure 25 those shown. In other embodiments, the photonics system 500 includes multiple optical engines, photonics packages, or waveguide structures. All such variations are within the scope of this disclosure.

[0115] In some embodiments, the photonics package 200 is connected to a package substrate 510. The photonics package 200 may be similar to the photonics package 200 described previously for Figure 10 that. For example, the photonics package 200 may include an optical engine 100 that includes one or more edge couplers 107. In other embodiments, multiple photonics packages 200 may be attached to the package substrate 510. In some embodiments, the package substrate 510 includes conductive pads, conductive wiring, and / or other conductive components, such as through substrate vias (TSVs). In some embodiments, the package substrate 510 may include an interposer, a semiconductor substrate, a redistribution structure, a core substrate, a printed circuit board (PCB), or a structure of a different type than these examples. In some embodiments, the package substrate 510 includes active and / or passive devices. In other embodiments, the package substrate 510 does not include active and / or passive devices. In some embodiments, a conductive connector 512 is formed on the package substrate 510. The conductive connector 512 may be similar to the conductive connector 218 described previously for Figure 10 that and may be formed using similar materials or techniques. For example, the conductive connector 512 may include solder bumps or the like.

[0116] In some embodiments, the conductive connector 218 of the photon package 200 is placed on the corresponding conductive pad of the package substrate 510, and then a reflow process is performed to bond the photon package 200 to the package substrate 510. In this way, the photon package 200 can be electrically connected to the package substrate 510. In other embodiments, the photon package 200 can be bonded to the package substrate 510 using dielectric-to-dielectric bonding and / or metal-to-metal bonding (e.g., direct bonding, fusion bonding, oxide-to-oxide bonding, hybrid bonding, or similar bonding).

[0117] In some embodiments, the photon system 500 includes a fixture 520 (or adapter) that supports or secures the waveguide structure 300. For example, the fixture 520 can include an opening within which the waveguide structure 300 is placed. In some embodiments, the waveguide structure 300 can be attached to the fixture 520 using an adhesive. For example, the fixture 520 can be attached to the package substrate 510 using an adhesive. In some embodiments, the fixture 520 can also be configured to accommodate an optical fiber connector 522. The fixture 520 can secure the optical fiber connector 522 and facilitate the optical alignment of the optical fiber connector 522 with the waveguide 304 of the waveguide structure 300. For example, in some embodiments, the optical fiber connector 522 can be optically coupled to the second end 305B (please refer to FIGS. 12-19). In some cases, the lens 322B can improve the optical coupling and misalignment tolerance between the waveguide 304 and the optical fiber connector 522. Figure 25 The fixture 520 shown is a representative example, and the fixture 520 may also have other shapes, sizes, or configurations.

[0118] In some embodiments, the optical fiber connector 522 can be an optical component, such as an optical fiber, an MT ferrule, an optical fiber array (e.g., an optical fiber array unit), an MPO connector, an MTP connector, an optical cable, or the like. It can also be other types of optical fiber connectors 522. In some embodiments, the optical fiber connector 522 includes alignment pins (not shown) that are inserted into corresponding openings or pinholes (not shown) in the waveguide structure 300 and / or the fixture 520. In some embodiments, the second auxiliary lens 320B can also have an opening configured to accommodate the alignment pins, such as the opening 324 shown in FIG. 22.

[0119] As described above, the waveguide 304 of the waveguide structure 300 can be optically coupled to the photon package 200. For example, in some embodiments, the edge coupler 107 of the optical engine 100 can be optically coupled to the first end 305A of the waveguide 304 (please refer to Figures 12-19)。In this manner, waveguide 304 can optically couple waveguide 104 of optical engine 100 to an optical component (e.g., fiber optic connector 522) such that optical signals and / or optical power can be transmitted between optical engine 100 and the optical component. The waveguide structure 300 described herein can allow for effective optical coupling between optical engine 100 and the optical component at a relatively small distance.

[0120] In some embodiments, waveguide structure 300 can be actively aligned to optical engine 100 or passively aligned to optical engine 100. In active alignment, corresponding alignment electronic signals are generated by optical engine 100 and monitored during alignment to facilitate effective alignment between waveguide 304 and edge coupler 107. In passive alignment, waveguide structure 300 is aligned without monitoring electronic signals. In some cases, the use of lenses (e.g., lens 322 or 332) can allow for improved passive alignment. In some embodiments, after alignment, an optical adhesive 504 can be deposited between photonics package 200 and waveguide structure 300 to protect the surfaces, provide structural support, and facilitate optical coupling between photonics package 200 and waveguide structure 300. For example, optical adhesive 504 can be deposited within the gap between photonics package 200 and waveguide structure 300. Optical adhesive 504 can be any suitable optical adhesive, optical glue, or the like.

[0121] Figure 26 and 27 illustrates an intermediate step in forming polymer waveguide 604 according to some embodiments. Figure 26 and 27 illustrates an enlarged cross-sectional portion of photonics package 200, waveguide structure 300, and the gap therebetween. In some embodiments, polymer waveguide 604 can be formed to replace the deposition of optical adhesive 504. In some embodiments, polymer waveguide 604 can be formed to optically couple waveguide 304 to edge coupler 107, thereby eliminating the need for waveguide 304 to be aligned to edge coupler 107.

[0122] In Figure 26 , a polymer material 602 is deposited between photonics package 200 and waveguide structure 300. Polymer material 602 can be any photosensitive resin suitable for forming a laser direct write waveguide, such as an inorganic-organic hybrid material, a polyurethane acrylate monomer, an acrylic prepolymer, an epoxy acrylate resin, or the like or a combination thereof. Waveguide 604 can be formed using, for example, a laser direct write process or a similar method, as Figure 26It is represented by the laser direct writing device 610 used. The laser direct writing process can focus the laser on a local area within the polymer material 602, thereby changing the properties of the local area by polymerizing the material through nonlinear absorption. For example, the laser can increase the refractive index of the local area or cure the local area. By performing the laser direct writing process along a path within the polymer material 602, a continuous laser direct writing portion of the polymer material 602 that serves as a waveguide (e.g., waveguide 604) can be formed. The laser direct writing process can be performed multiple times to form multiple waveguides 604 within the polymer material 602. In some cases, the laser direct writing process for forming the waveguide 604 can be similar to the laser direct writing process 321 described previously. In some embodiments, the size, shape, position, optical properties, or other properties of the waveguide 604 can depend on the material of the polymer material 602, or can be controlled by controlling parameters such as the laser wavelength, laser pulse energy, focal spot size, laser intensity profile or phase profile, laser pulse width (e.g., duration), laser pulse repetition rate or duty cycle, laser direct writing path speed, laser direct writing direction, laser polarization, or other parameters).

[0123] As Figure 26 shown, each waveguide 604 formed by the laser direct writing process can extend from the sidewall of the waveguide structure 300 near the first end 305A of the corresponding waveguide 304 to the sidewall of the optical engine 100 near the corresponding edge coupler 107. The waveguide 604 can be optically coupled to the waveguide 304 and the edge coupler 107. In this way, a waveguide 604 that optically couples the waveguide 304 to the corresponding edge coupler 107 can be formed. In some embodiments, the laser direct writing process can be performed multiple times to form waveguides 604 between each edge coupler 107 and the corresponding waveguide 304.

[0124] In Figure 27 this, a cleaning process is performed, which selectively removes the polymer material 602 and leaves the waveguide 604. The cleaning process can include wet chemical cleaning, wet etching process, dry etching process, ashing process, or similar processes. In this way, the waveguide 604 can be formed as a free-standing structure, which can improve the optical confinement of the waveguide 604 and reduce optical losses.

[0125] Embodiments of the present disclosure have some advantageous features. By forming a waveguide structure (with a laser direct-written waveguide therein), an optical component (e.g., an optical fiber) can integrate an optical engine. The waveguide structure allows for the transmission of optical power and / or optical signals between the optical feature components (e.g., edge couplers) of the optical engine and the optical component, where the optical feature components and the optical component can have different sizes, pitches, or heights. In this way, the waveguide structure described herein can serve as a fiber array unit (FAU). Using laser direct writing to form the waveguide can allow for customizing the waveguide structure for various applications or configurations. Additionally, using the waveguide structure described herein can allow for effective optical coupling over smaller distances or in more compact volumes, which can reduce the package size.

[0126] In an embodiment of the present disclosure, a package includes: an optical engine attached to a package substrate, where the optical engine includes a first waveguide; and a waveguide structure attached to the package substrate adjacent to the optical engine, where the waveguide structure includes a second waveguide located within a transparent block, where a first end of the second waveguide is optically coupled to the first waveguide, and where the waveguide structure is configured to be connected to an optical fiber component such that a second end of the second waveguide is optically coupled to an optical fiber of the optical fiber component. In one embodiment, the optical fiber component includes an MT ferrule. In one embodiment, the package includes an optical adhesive extending from a sidewall of the optical engine to a sidewall of the waveguide structure. In one embodiment, the transparent block and the second waveguide are of the same material. In one embodiment, the transparent block includes a plurality of lenses located within the transparent block, where the lenses are adjacent to corresponding ends of the second waveguide. In one embodiment, the second waveguide is a laser direct-written waveguide. In one embodiment, the transparent block has a length in the range of 15 mm to 20 mm. In one embodiment, the second waveguide is optically coupled to the first waveguide through an edge coupler located within the optical engine. In one embodiment, the package includes a fixture, where the transparent block is fixed by the fixture, and where the fixture is configured to attach the optical fiber component, and where when the optical fiber component is attached to the fixture, the second waveguide is optically coupled to the optical fiber.

[0127] In an embodiment of the present disclosure, an optical device includes: a photon package including a plurality of edge couplers; a glass block adjacent to the photon package, wherein the glass block includes a plurality of waveguides, each waveguide having a first end and a second end, wherein the first end of each waveguide is optically coupled to a corresponding edge coupler, and the first end of each waveguide is closer to a lower surface of the glass block than the corresponding second end of the waveguide; and a fixture surrounding the glass block, wherein the fixture is configured to be connected to an optical fiber. In one embodiment, the first ends of the waveguides are arranged in a horizontal row. In one embodiment, the first ends of the waveguides have a first pitch, and the second ends of the waveguides have a second pitch greater than the first pitch. In one embodiment, the first pitch ranges from 10 μm to 125 μm, and the second pitch ranges from 250 μm to 500 μm. In one embodiment, the optical device includes an auxiliary lens located on a sidewall of the glass block, wherein the auxiliary lens includes a plurality of lenses, and each lens is optically coupled to a corresponding waveguide among the waveguides. In one embodiment, the first ends of the waveguides are arranged in a horizontal row. In one embodiment, the second ends of the waveguides are arranged in a first horizontal row and a second horizontal row, the first horizontal row being at a first height above a lower surface of the glass block, and the second horizontal row being at a second height different from the first height above the lower surface of the glass block.

[0128] In an embodiment of the present disclosure, a method of forming an optical device includes: forming a transparent block; performing a laser direct writing process to form a waveguide in the transparent block; aligning the waveguide with an edge coupler of a photon package; and attaching an optical fiber to the transparent block, wherein the attached optical fiber is optically coupled to the waveguide. In one embodiment, the above method includes: depositing a polymer material between the transparent block and the photon package; and performing a laser direct writing process on the polymer material to form a polymer waveguide extending from the transparent block to the photon package, wherein the polymer waveguide optically couples the waveguide to the edge coupler of the photon package. In one embodiment, a first end of the waveguide has a first diameter, and a second end of the waveguide has a second diameter different from the first diameter. In one embodiment, the waveguide follows a curved path.

[0129] The above briefly describes the characteristic components of several embodiments of the present invention, enabling those with ordinary knowledge in the relevant technical field to more easily understand the form of the present disclosure. Any person with ordinary knowledge in the relevant technical field should understand that the present disclosure can be easily used as a basis for changing or designing other processes or structures to achieve the same purposes and / or obtain the same advantages as those described in the embodiments herein. Any person with ordinary knowledge in the relevant technical field can also understand that equivalent structures to the above do not depart from the spirit and protection scope of the present disclosure, and can be modified, substituted, and polished without departing from the spirit and scope of the present disclosure.

Claims

1. A package, characterized in that: include: an optical engine attached to a packaging substrate, wherein the optical engine includes a first waveguide; as well as A waveguide structure is attached to a packaging substrate adjacent to the optical engine, wherein the waveguide structure includes a second waveguide located in a transparent block, wherein a first end of the second waveguide is optically coupled to the first waveguide, and wherein the waveguide structure is configured to be connected to an optical fiber component so that a second end of the second waveguide is optically coupled to an optical fiber of the optical fiber component.

2. The package according to claim 1, wherein: Also included is an optical adhesive extending from a side wall of the optical engine to a side wall of the waveguide structure.

3. The package according to claim 1 or 2, characterized in that: The transparent block includes a plurality of lenses located in the transparent block, wherein the lenses are adjacent to a plurality of corresponding ends of the second waveguide.

4. The package according to claim 1 or 2, characterized in that: The second waveguide is a laser direct writing waveguide.

5. The package according to claim 1 or 2, characterized in that: The second waveguide is optically coupled to the first waveguide via an edge coupler located in the optical engine.

6. An optical device, characterized in that: include: A photonic package comprising a plurality of edge couplers; a glass block adjacent to the photonic package, wherein the glass block includes a plurality of waveguides, wherein each of the waveguides has a first end and a second end, wherein the first end of each of the waveguides is optically coupled to a corresponding edge coupler, wherein the first end of each of the waveguides is closer to a lower surface of the glass block than the corresponding second end; and A fixture surrounds the glass block, wherein the fixture is configured to be connected to an optical fiber.

7. The optical device according to claim 6, characterized in that The first ends of the waveguides have a first spacing, and the second ends of the waveguides have a second spacing greater than the first spacing.

8. The optical device according to claim 6 or 7, characterized in that Also included is an auxiliary lens located on a side wall of the glass block, wherein the auxiliary lens includes a plurality of lenses, wherein each of the lenses is optically coupled to a corresponding waveguide among the waveguides.

9. The optical device according to claim 6 or 7, characterized in that: The first ends of the waveguides are arranged in a horizontal row.

10. The optical device according to claim 6 or 7, characterized in that: The second ends of the waveguides are arranged in a first horizontal row and a second horizontal row, the first horizontal row is located at a first height above a lower surface of the glass block, and the second horizontal row is located at a second height above the lower surface of the glass block that is different from the first height.

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