Heating disc with multi-zone temperature compensation and semiconductor equipment
By designing a heating plate with multi-zone temperature compensation, using multiple sub-regions with different shapes and grooves with different arrangement densities, the problem of environmental temperature difference in the process chamber of semiconductor equipment is solved, and the quality of wafer film is guaranteed.
Patent Information
- Application Number
- CN202422080087.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-26
- Publication Date
- 2025-06-13
- Estimated Expiration
- 2034-08-26
AI Technical Summary
There is a temperature difference in the process chamber environment of existing semiconductor equipment, which affects the film quality on the wafer.
A heating disk with multi-zone temperature compensation is designed. Through the upper and lower plates overlapping each other, heating areas formed by a combination of multiple sub-regions of different shapes are arranged. The grooves present different arrangement densities and/or arrangement paths in the multiple sub-regions to achieve local temperature difference compensation.
By improving the heating structure, the temperature difference in the process chamber environment can be effectively compensated and the quality of the wafer film can be ensured.
Smart Images
Figure CN222980467U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, and particularly relates to a heating plate with multi-zone temperature compensation and a semiconductor device. Background Art
[0002] In the prior art, the process chambers of semiconductor devices such as PECVD and PEALD are all designed with wafer transfer ports. The design of the wafer transfer port position is an irregular area, which affects the temperature distribution in the chamber. In the chamber environment of this device, the common problem is that the temperature at the wafer transfer port position is lower than that at other positions. Temperature changes will directly affect the film quality on the wafer. Summary of the Utility Model
[0003] The purpose of the utility model is to provide a heating plate with multi-zone temperature compensation and a semiconductor device, aiming to solve the problem that the temperature difference in the process chamber environment of the existing semiconductor device affects the wafer film quality.
[0004] To solve the above technical problems, the purpose of the utility model is achieved through the following technical solutions: A heating plate with multi-zone temperature compensation is provided, which includes an upper plate and a lower plate that are stacked on each other. A groove for arranging heating wires is formed on the stacked surface of the upper plate.
[0005] A heating area formed by combining multiple sub-areas with different shapes is arranged on the stacked surface of the upper plate.
[0006] The grooves show different arrangement densities and / or arrangement paths in multiple sub-areas of the heating area.
[0007] Further, the shape of the heating area is circular, and the multiple sub-areas include at least one conventional heating area and a compensation heating area.
[0008] Further, the grooves are concentrically distributed in multiple circles from the inside to the outside; the arrangement density of the grooves in the compensation heating area is greater than that in the conventional heating area.
[0009] Further, the shape of the compensation heating area is one of a sector and a fan arc.
[0010] Further, the sector-shaped compensation heating area occupies a 1 / 4 circular area of the heating area.
[0011] Further, the fan arc-shaped compensation heating area occupies the outer fan arc area in a 1 / 4 circular area of the heating area.
[0012] Further, the heating wires are distributed along the arrangement paths of the grooves; there are multiple groups of heating wires and they respectively correspond to multiple sub-areas one by one.
[0013] Further, the heating wire is distributed along the arrangement path of the groove; there is a set of heating wires corresponding to all sub-regions.
[0014] Further, the upper plate and the lower plate are connected by brazing or electron beam welding.
[0015] An embodiment of the present invention further provides a semiconductor device, including: a process chamber for processing a wafer, and the above-mentioned heating plate for heating the wafer is installed in the process chamber; wherein, the sub-region with the largest arrangement density among the multiple sub-regions of the heating region corresponds to the wafer transfer port of the process chamber.
[0016] The beneficial effects of the embodiment of the present invention are as follows: The heating structure of the upper plate is improved to compensate for the temperature difference in the process chamber environment, thereby ensuring the quality of the wafer film. Specifically, the heating region of the upper plate can be divided into multiple sub-regions according to different temperature range requirements, and the arrangement density and / or arrangement path of the grooves in each sub-region are set, that is, the arrangement density and / or arrangement path of the heating wires in each sub-region are set. Different arrangement densities and / or arrangement paths of the heating wires will result in different heating temperatures, thereby realizing local temperature difference compensation. That is, one of the sub-regions corresponds to the position of the wafer transfer port of the process chamber, and the arrangement density of the heating wires in this sub-region is increased, so that a higher temperature can be generated in this sub-region, thereby compensating for the low-temperature defect brought by the wafer transfer port. Description of the Drawings
[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0018] Figure 1 It is a schematic structural diagram of the first embodiment of the upper plate provided by the embodiment of the present invention.
[0019] Figure 2 It is a schematic structural diagram of the second embodiment of the upper plate provided by the embodiment of the present invention.
[0020] Figure 3 It is a schematic structural diagram of the third embodiment of the upper plate provided by the embodiment of the present invention.
[0021] Figure 4 It is a schematic structural diagram of the fourth embodiment of the upper plate provided by the embodiment of the present invention. Detailed Embodiments
[0022] Next, the technical solutions in the embodiments of the present utility model will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are part of the embodiments of the present utility model, rather than all of the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.
[0023] It should be understood that when used in this specification and the appended claims, the terms "comprises" and "comprising" indicate the presence of the described features, wholes, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.
[0024] It should also be understood that the terms used in this specification of the present utility model are merely for the purpose of describing specific embodiments and are not intended to limit the present utility model. As used in this specification of the present utility model and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms.
[0025] It should be further understood that the term " / and" used in this specification of the present utility model and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.
[0026] Please refer to Figures 1 to 4 , the embodiment of the present utility model provides a heating plate with multi-zone temperature compensation, including an upper plate and a lower plate that are stacked on top of each other. A groove for arranging a heating wire is formed on the stacking surface of the upper plate; a heating area formed by combining multiple sub-regions with different shapes is provided on the stacking surface of the upper plate; the grooves exhibit different arrangement densities and / or arrangement paths in the multiple sub-regions of the heating area.
[0027] The heating plate of this embodiment is applied to the process chamber of a semiconductor device to heat the wafer in the process chamber; the heating plate may include an upper plate and a lower plate. The material of the upper plate can be aluminum metal or other metals with heat conduction functions. After the heating wire is installed in the groove of the upper plate, the lower plate and the upper plate are stacked on top of each other and hermetically connected by brazing or electron beam welding to maintain the stability of the heating wire. Then, the heat generated after the heating wire is electrically connected to an external power source can be transferred to the upper plate, and then the upper plate heats the wafer.
[0028] In this embodiment, by improving the heating structure of the upper plate, it can compensate for the temperature difference in the process chamber environment, thereby ensuring the quality of the wafer film. Specifically, the heating area of the upper plate can be divided into multiple sub-areas according to different temperature range requirements, and the arrangement density and / or arrangement path of the grooves in each sub-area can be set, that is, the arrangement density and / or arrangement path of the heating wires in each sub-area can be set. Different arrangement densities and / or arrangement paths of the heating wires will result in different heating temperatures, thereby achieving local temperature difference compensation.
[0029] Based on this, it can be understood that one of the sub-areas can be corresponding to the wafer transfer port position of the process chamber, and the arrangement density of the heating wires in this sub-area can be increased, so that a higher temperature can be generated in this sub-area, thereby compensating for the low-temperature defect brought by the wafer transfer port.
[0030] The following specifically introduces the specific embodiments of the heating area.
[0031] In one embodiment, the shape of the heating area is circular, and the multiple sub-areas include at least one conventional heating area and a compensation heating area.
[0032] In this embodiment, the shape of the heating area can be adapted to the shape of the wafer to be processed, and generally it is circular to facilitate comprehensive heating of the wafer.
[0033] Generally, one compensation heating area is set corresponding to the wafer transfer port, and the conventional heating area can be one or more, and the specific quantity can be set according to actual requirements.
[0034] In one embodiment, the grooves are distributed in multiple concentric circles from the inside to the outside; the arrangement density of the grooves in the compensation heating area is greater than that in the conventional heating area.
[0035] In this embodiment, the number of circles of the grooves and the arrangement density between each circle can be set according to actual requirements; it should be noted that the arrangement density in the compensation heating area is greater than that in the conventional heating area, so as to ensure that the temperature generated in the compensation heating area is higher than that generated in the conventional heating area.
[0036] In one embodiment, the shape of the compensation heating area is one of a sector and a fan arc.
[0037] In this embodiment, the shape of the compensation heating area needs to be adaptively set to the shape of the wafer transfer port to better perform temperature compensation. Preferably, based on the arrangement method of the grooves in this case, the shape of the heating area can be preferably set to one of a sector and a fan arc.
[0038] In some specific examples, the sector-shaped compensation heating area can account for a 1 / 4 circular area of the heating area.
[0039] In some specific examples, the compensation heating area in the shape of a fan arc can occupy the outer fan arc area in the 1 / 4 circular area of the heating area.
[0040] The specific embodiments of the heating wire will be specifically introduced below.
[0041] Combined with Figures 1 to 3 , in one embodiment of the heating wire, the heating wire is distributed along the arrangement path of the groove; multiple groups of the heating wire are provided and respectively correspond to multiple sub-regions one by one.
[0042] In this embodiment, the heating wire is grouped and independently controlled, so that different temperature requirements of multiple sub-regions can be realized to adapt to the more complex environmental temperature difference in the process chamber.
[0043] Combined with Figure 4 , in another embodiment of the heating wire, the heating wire is distributed along the arrangement path of the groove; one group of the heating wire is provided and corresponds to all sub-regions.
[0044] In this embodiment, only one group of heating wire is provided, and the temperature generated by the heating wire in each sub-region is determined by the arrangement density and arrangement path of the heating wire in each sub-region, which is applicable to chambers with some specific environmental temperature differences.
[0045] Based on the heating plate introduced above, the following will be a more specific example introduction with four embodiments:
[0046] Please refer to Figure 1 Examples a and b in, Embodiment 1:
[0047] The heating area is divided into a compensation heating area A and a conventional heating area B, and the shape of the compensation heating area A is a sector; among them, the compensation heating area A corresponds to the wafer transfer port.
[0048] The grooves and the arrangement of the heating wire in the compensation heating area A can be seen in Figure 1 Example b (solid line part) of, the center diameter of the first circle is 60 mm, the center diameter of the second circle is 90 mm, the center diameter of the third circle is 120 mm, the center diameter of the fourth circle is 150 mm, the center diameter of the fifth circle is 180 mm, the center diameter of the sixth circle is 210 mm, the center diameter of the seventh circle is 240 mm, the center diameter of the eighth circle is 270 mm, the center diameter of the ninth circle is 300 mm, the distribution is 1 / 4 circle, the slot width is 5 mm, and the depth is 5 mm.
[0049] The grooves and the arrangement of the heating wire in the conventional heating area B can be seen in Figure 1For Example b (the dashed part), the central diameter of the first circle is 60 mm, the central diameter of the second circle is 120 mm, the central diameter of the third circle is 180 mm, the central diameter of the fourth circle is 240 mm, and the central diameter of the fifth circle is 300 mm. It is distributed as 3 / 4 of a circle, with a slot width of 5 mm and a depth of 5 mm.
[0050] Please refer to Figure 2 Examples a and b in
[0051] The heating area is divided into a compensation heating area A and a conventional heating area B. The shape of the compensation heating area A is a sector arc; among them, the compensation heating area A corresponds to the film transfer port.
[0052] The arrangement of the grooves and heating wires in the compensation heating area A can be seen in Figure 2 Example b (the solid part) in
[0053] The arrangement of the grooves and heating wires in the conventional heating area B can be seen in Figure 2 For Example b (the dashed part), the central diameter of the first circle is 60 mm, the central diameter of the second circle is 120 mm, the central diameter of the third circle is 180 mm, the central diameter of the fourth circle is 240 mm, and it is distributed as a full circle, with a slot width of 5 mm and a depth of 5 mm.
[0054] Please refer to Figure 3 Examples a and b in
[0055] The heating area is divided into a compensation heating area A, a conventional heating area B, and C. The shape of the compensation heating area A is a sector arc; the arrangement density of the grooves (i.e., heating wires) in the compensation heating area A is greater than that in the conventional heating area B (the dotted part) and the conventional heating area C (the dashed part); among them, the compensation heating area A corresponds to the film transfer port.
[0056] The arrangement of the grooves and heating wires in the compensation heating area A can be seen in Figure 3 Example b (the solid part) in
[0057] The arrangement of the grooves and heating wires in the conventional heating area B can be seen in Figure 3For Example b (the dotted line part), the center diameter of the first circle is 60 mm, the center diameter of the second circle is 120 mm, the center diameter of the third circle is 180 mm, the center diameter of the fourth circle is 240 mm, the distribution is a full circle, the slot width is 5 mm, and the depth is 5 mm.
[0058] The grooves and heating wire arrangements in the conventional heating area C are shown in Figure 3 For Example b (the dashed line part), the center diameter of the first circle is 240 mm, the center diameter of the second circle is 300 mm, the distribution is a full circle, the slot width is 5 mm, and the depth is 5 mm.
[0059] Please refer to Figure 4 Examples a and b in
[0060] The heating area is divided into a compensation heating area A and a conventional heating area B. The shape of the compensation heating area A is a sector arc; among them, the compensation heating area A corresponds to the transfer port of the process chamber (another position where temperature difference is likely to occur).
[0061] The heating area is distributed with 5 circles of heating wires in concentric circles from the inside to the outside. The diameter of the first circle is 60 mm, the diameter of the second circle is 120 mm, the diameter of the third circle is 180 mm, the diameter of the fourth circle is 240 mm, and the diameter of the fifth circle is 300 mm. And the groove density of diameters 260 mm and 280 mm is increased at the position of the compensation heating area A; the slot width is 5 mm, and the depth is 5 mm.
[0062] Based on the four embodiments of the above examples, different heating plates can be selected according to different temperature range requirements as needed; for different chamber environments, the distribution of heating wires in the heating plate can be adjusted. The temperature in the low-temperature area of the chamber is increased by increasing the heating wire density, and the temperature of the heating plate in the high-temperature area of the chamber is decreased by decreasing the heating wire density.
[0063] The embodiment of the present invention also provides a semiconductor device, including: a process chamber for processing a wafer, and the above-mentioned heating plate for heating the wafer is installed in the process chamber; among them, the sub-region with the largest arrangement density among the multiple sub-regions of the heating area corresponds to the wafer transfer port of the process chamber.
[0064] As mentioned above, it is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims
1. A heating plate with multi-zone temperature compensation, comprising an upper plate and a lower plate superimposed on each other, wherein a groove for accommodating a heating wire is provided on the superimposed surface of the upper plate, characterized in that: A heating area formed by merging a plurality of sub-areas of different shapes is provided on the overlapping surface of the upper plate; The grooves present different arrangement densities and / or arrangement paths in a plurality of sub-regions of the heating region.
2. The heating plate with multi-zone temperature compensation according to claim 1, characterized in that: The heating area is circular in shape, and the plurality of sub-areas include at least one regular heating area and a compensation heating area.
3. The heating plate with multi-zone temperature compensation according to claim 2, characterized in that: The grooves are distributed in a plurality of concentric circles from the inside to the outside; and the arrangement density of the grooves in the compensation heating area is greater than that in the conventional heating area.
4. The heating plate with multi-zone temperature compensation according to claim 2, characterized in that: The shape of the compensation heating area is one of a fan shape and a fan arc.
5. The heating plate with multi-zone temperature compensation according to claim 4, characterized in that: The fan-shaped compensation heating area occupies a 1 / 4 circular area of the heating area.
6. The heating plate with multi-zone temperature compensation according to claim 4, characterized in that: The fan-shaped compensation heating area occupies the outer fan-shaped area in the 1 / 4 circle area of the heating area.
7. The heating plate with multi-zone temperature compensation according to claim 2, characterized in that: The heating wires are distributed along the arrangement path of the grooves; the heating wires are provided in multiple groups and correspond one by one to multiple sub-areas respectively.
8. The heating plate with multi-zone temperature compensation according to claim 2, characterized in that: The heating wires are distributed along the arrangement path of the grooves; a group of heating wires is provided and corresponds to all sub-areas.
9. The heating plate with multi-zone temperature compensation according to claim 1, characterized in that: The upper plate and the lower plate are connected by brazing or electron beam welding.
10. A semiconductor device, characterized in that: include: A process chamber for processing wafers, wherein a heating plate as described in any one of claims 1 to 9 for heating the wafers is installed in the process chamber; wherein the sub-area with the highest arrangement density among the multiple sub-areas of the heating area corresponds to the film transfer port of the process chamber.