Demoulding device for indium phosphide single crystal

Abstract

A demolding device for indium phosphide single crystals relates to the technical field of indium phosphide production equipment, and comprises a crucible filled with indium phosphide crystals and a covering agent after single crystal growth, a heating water tank, a demolding tank, a hanging bracket, a hanging bracket lifter and an ultrasonic vibration plate, the crucible containing indium phosphide crystals is arranged in the demolding groove with an opening facing downwards, deionized water is contained in the demolding groove, the height of the deionized water is not larger than that of the whole crucible, the lower end of the hanging bracket is fixedly connected with the crucible, the upper end of the hanging bracket is fixedly connected with the hanging bracket lifter, and therefore the hanging bracket lifter ascends and descends to drive the crucible to ascend and descend. The ultrasonic vibration plate is placed at the bottommost part of the demolding groove, and the ultrasonic vibration plate is not in contact with the indium phosphide crystal; and the demolding tank is positioned in the heating water tank. According to the utility model, some physical properties of the crystal, the boron nitride crucible and the covering agent are utilized, and a special method for removing the covering agent is adopted, so that the crystal can be protected, the crucible is not damaged, and the crucible can be reused.

Description

Technical Field

[0001] The utility model belongs to the technical field of indium phosphide production equipment, and particularly relates to a demoulding device for indium phosphide single crystals. Background Art

[0002] The VGF method for crystal growth has been widely used in the preparation of single crystals of various materials, such as gallium arsenide, indium phosphide, indium arsenide, gallium antimonide, etc. For example, indium phosphide single crystal material belongs to the second-generation semiconductor material, has a zinc blende crystal structure, and its melting point is 1070 degrees Celsius. Because of its many electrochemical properties, it is currently widely used in optical communication, millimeter-wave devices, integrated circuits, space exploration, solar cells, etc., and has an objective market prospect.

[0003] The preparation of various single crystals with low cost and high quality requires optimization and improvement in each production process link.

[0004] Single crystal preparation needs to grow in a boron nitride crucible and there is a covering agent. After the crystal solidifies, the covering agent will also solidify, which will firmly seal the crystal in the crucible and prevent it from being removed. The traditional method is to break the crucible to remove the covering agent and then take out the crystal. However, this method may damage the crystal. For some materials such as indium phosphide, due to phosphorus, it is easy to catch fire, resulting in high potential safety hazards. The crucible is also very expensive and cannot be used after being broken, resulting in high costs and waste of resources. Summary of the Utility Model

[0005] In order to solve the problem that only by breaking the crucible can the covering agent be removed to take out the crystal, the utility model provides a demoulding device for indium phosphide single crystals. The utility model utilizes some physical properties of the crystal, boron nitride crucible and covering agent, and through a special method of removing the covering agent, the crystal can be protected and the crucible is not damaged, so that the crucible can be reused.

[0006] The technical solution provided by the utility model is: a demoulding device for indium phosphide single crystals, including a crucible containing indium phosphide crystal and covering agent after single crystal growth. The demoulding device for indium phosphide single crystals further includes a water bath heating system, a demoulding tank, a hanging frame, a hanging frame lifter and an ultrasonic vibrating plate. The crucible containing indium phosphide crystal is placed in the demoulding tank with its opening facing downwards. The demoulding tank is filled with deionized water, and the height of the deionized water exceeds the entire crucible. The lower end of the hanging frame is fixedly connected to the crucible, and the upper end of the hanging frame is fixedly connected to the hanging frame lifter, so that the lifting of the hanging frame lifter drives the lifting of the crucible. The ultrasonic vibrating plate is placed at the bottom of the demoulding tank and does not contact the indium phosphide crystal. The water bath heating system includes a heating water tank, and the demoulding tank is located in the heating water tank.

[0007] A further technical solution is: a receiving plate is arranged in the demoulding tank below the indium phosphide crystal.

[0008] A further technical solution is: the number of the crucibles containing indium phosphide crystals is not less than two, all the crucibles containing indium phosphide crystals are fixed by the same crucible clamp, and the lower end of the hanger is fixedly connected to the crucible clamp.

[0009] A further technical solution is that the water temperature of the heating water tank is kept constant at 60-80 degrees Celsius.

[0010] Compared with the prior art, the beneficial effects of the utility model are:

[0011] 1. This application can remove the covering agent from multiple crystals at the same time, so it is more efficient.

[0012] 2. The present application allows the expensive crucible to be reused, increasing the number of uses from once to 4-5 times, thereby significantly reducing the cost of crystal growth.

[0013] 3. The surface of the crystal demoulded in this application has no enrichment of covering agent and no pits or cracks, so that the damage to the crystal caused by demoulding is minimized.

[0014] 4. This application is easy to operate, efficient and safe. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a structural schematic diagram of the utility model.

[0016] In the figure: 1. Heating water tank; 2. Water filling port; 3. Demolding groove; 4. Hanger; 5. Hanger lifter; 6. Controller; 7. Heater; 8. Ultrasonic vibration plate; 9. Crucible clamp; 10. Crucible; 11. Material receiving plate; 12. Drainage port. DETAILED DESCRIPTION

[0017] In order to enable those skilled in the art to better understand the solution of the utility model, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the utility model.

[0018] like Figure 1As shown in the figure, this embodiment is a demoulding device for indium phosphide single crystals. Its structure includes a crucible 10 containing indium phosphide crystals and a covering agent after single crystal growth. The demoulding device for indium phosphide single crystals further includes a water bath heating system, a demoulding tank 3, a suspension bracket 4, a suspension bracket lifter 5, and an ultrasonic vibration plate 8. The crucible 10 containing indium phosphide crystals is placed in the demoulding tank 3 with its opening facing downwards. The demoulding tank 3 is filled with deionized water, and the height of the deionized water submerges the entire crucible 10 so that the deionized water can act on the entire crucible 10 section. If there is only one crucible 10, the lower end of the suspension bracket 4 is fixedly connected to the crucible 10; if there are two or more crucibles 10, then all the crucibles 10 containing indium phosphide crystals are fixed by the same crucible gripper 9, and the lower end of the suspension bracket 4 is fixedly connected to the crucible gripper 9; the upper end of the suspension bracket 4 is fixedly connected to the suspension bracket lifter 5, so that the lifting of the suspension bracket lifter 5 drives the lifting of the crucible 10. The ultrasonic vibration plate 8 is placed at the bottom of the demoulding tank 3 and does not contact the indium phosphide crystals. The water bath heating system includes a heating water tank 1. The demoulding tank 3 is located in the heating water tank 1, so that the entire demoulding tank 3 is in a water bath heating state. The water temperature of the heating water tank 1 is kept constant at 60 - 80 degrees Celsius, and this temperature is more conducive to removing the covering agent. A receiving plate 11 is arranged in the demoulding tank 3 below the indium phosphide crystals, and when the crystals fall off, the receiving plate 11 catches them.

[0019] The entire demoulding process of this embodiment is as follows: After the crystal growth is completed and the furnace is opened, the quartz tube is broken and the crucible 10 containing the crystals is taken out. The seed crystal cavity faces upwards and the crucible 10 is placed in the demoulding tank 3 with its opening facing downwards. Up to eight crystals can be placed at one time, and the crucible gripper 9 is connected to the suspension bracket 4. The demoulding tank 3 is filled with deionized water and placed in the heating water tank 1. The water bath heating system needs to be turned on in advance so that the water temperature in the heating water tank 1 reaches 60 - 80 degrees Celsius, and this temperature is maintained constant through the water bath heating system. The ultrasonic vibration plate 8 is placed at the bottom of the demoulding tank 3 to prevent direct contact with the ultrasonic vibration plate 8 when the crystals are placed. At that time, the ultrasonic vibration plate 8, the suspension bracket 4, and the crucible 10 containing the crystals are all in the deionized water in the demoulding tank 3. The height of the deionized water surface should be higher than the height of the crucible 10 containing the crystals, and the water temperature is kept constant at 60 - 80 degrees Celsius. After all are placed, the controller 6 is turned on, the ultrasonic frequency is adjusted, and it is maintained for 3 - 5 hours. The covering agent sealed at the tail will soften and slowly fall off by itself, and the covering agent between the crystals and the crucible 10 also softens due to the action of ultrasonic waves and water temperature. Through vibration every half an hour, some crystals will automatically fall out of the crucible 10 after the covering agent falls off to a certain extent, and the crystals are intact and the crucible 10 is intact.

[0020] The upper end of the heating water tank 1 of the present application is provided with a water injection port 2, the lower end of the heating water tank 1 is provided with a drain port 12, and a heater 7 is provided at the bottom of the heating water tank 1. The water temperature, ultrasonic vibration amplitude and frequency in the heating water tank 1 of the present application are all controlled by a controller 6. This control method is a commonly used means in the field of electrical automation and does not fall within the scope of protection required by the present application, so it will not be described.

Claims

1. A demoulding device for an indium phosphide single crystal, comprising a crucible (10) containing an indium phosphide crystal and a covering agent after the single crystal is grown, characterized in that: The demoulding device for indium phosphide single crystals further comprises a water bath heating system, a demoulding groove (3), a hanger (4), a hanger lifter (5) and an ultrasonic vibration plate (8); the crucible (10) containing indium phosphide crystals is placed in the demoulding groove (3) with its opening facing downwards, the demoulding groove (3) contains deionized water, the height of the deionized water does not exceed the entire crucible (10), the lower end of the hanger (4) is fixedly connected to the crucible (10), and the upper end of the hanger (4) is fixedly connected to the hanger lifter (5), so that the lifting and lowering of the hanger lifter (5) drives the lifting and lowering of the crucible (10), and the ultrasonic vibration plate (8) is placed at the bottom of the demoulding groove (3), and the ultrasonic vibration plate (8) does not contact the indium phosphide crystals; the water bath heating system comprises a heating water tank (1), and the demoulding groove (3) is located in the heating water tank (1).

2. A demoulding device for an indium phosphide single crystal according to claim 1, characterized in that: A material receiving plate (11) is arranged in the demoulding groove (3) below the indium phosphide crystal.

3. The demoulding device for indium phosphide single crystal according to claim 1, characterized in that: The number of the crucibles (10) containing indium phosphide crystals is not less than two, and all the crucibles (10) containing indium phosphide crystals are fixed by the same crucible clamp (9), and the lower end of the hanger (4) is fixedly connected to the crucible clamp (9).

4. The demoulding device for indium phosphide single crystal according to claim 1, characterized in that: The water temperature of the heating water tank (1) is kept constant at 60-80 degrees Celsius.

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