Sealing element for wafer electroplating process

Abstract

The utility model discloses a sealing element for a wafer electroplating process. The sealing element comprises a first stage part, a second stage part, a third stage part and a third stage part which are sequentially formed on the front surface of a metal annular disc from the edge to the circle center; the plurality of first through holes are uniformly formed in a circle of the edge of the first stage part; the plurality of metal columns are uniformly formed on a certain circle of the second-stage platform part and are used for connecting electroplating process equipment; a plurality of second through holes are uniformly formed in the second stage part; the third stage part is formed into a plurality of conductive fingers which are independent from one another and are only connected in root part, and each conductive finger forms an angle which is inclined towards the direction of the front disc surface; the plurality of conductive structures are formed at positions close to the end parts of the conductive fingers in a one-to-one correspondence manner and are electrically connected with the conductive structures; the rubber layer is coated on the metal annular disc; the rubber layer fills the first through hole and the second through hole, and the metal column and the conductive structure do not cover the rubber layer. The device can be tightly attached to a wafer or a silicon wafer, can be quickly dismounted and mounted, is firm in structure without loosening, is convenient to operate, and can improve the working efficiency.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, in particular to a seal for semiconductor wafer electroplating process. Background Technique

[0002] The electroplating process technology is also called the ECP process, which is very important in the process of integrated circuit manufacturing. ECP uses the principle of electrolysis to convert metal ions into metal atoms and deposit a thin metal layer on the surface of the wafer. Its advantage is that it can form a very high surface flatness, reduce the defects and contamination of the wafer, thereby improving the conductivity and signal transmission efficiency of the wafer.

[0003] During the single-sided electroplating process of the ECP process, the wafer or silicon wafer, as the electroplating substrate, needs to be fixed on the substrate fixing seat. Since the sealing performance is a key factor in the electroplating process, the better the sealing performance, the better the electroplating uniformity. Therefore, in actual operation, a seal is often installed on the edge of the wafer or silicon wafer. However, most of the existing seals are in the form of wafer-embedded sealing or conductive separation sealing. Although they can achieve a certain sealing effect, due to the too large conductive voltage edge, it will not only reduce the utilization rate of the wafer and increase the cost, but also the long-term embedded contact will cause the seal to not fit tightly with the wafer or silicon wafer, resulting in loosening and reducing the sealing performance, thereby destroying the conductive uniformity and electroplating uniformity.

[0004] Therefore, there is an urgent need for a seal that can fit tightly with the wafer or silicon wafer, is not easy to loosen, can provide good sealing performance, and has a long service life. Summary of the Utility Model

[0005] A series of simplified concepts are introduced in the summary of the utility model. These simplified concepts are all simplified from the prior art in this field, which will be further described in detail in the specific implementation part. The summary part of the utility model does not mean to attempt to define the key features and essential technical features of the claimed technical solution, nor does it mean to attempt to determine the protection scope of the claimed technical solution.

[0006] The technical problem to be solved by the utility model is to provide a seal for wafer electroplating process that can fit tightly with the wafer or silicon wafer, can be quickly disassembled and installed, and has a firm structure and does not loosen.

[0007] To solve the above technical problem, the seal for wafer electroplating process provided by the utility model includes:

[0008] A metal annular disk 1, on the positive disk surface of which, a first-stage platform part to a third-stage platform part 2-4 are sequentially formed from the edge to the center of the circle;

[0009] A plurality of first through holes 5 are evenly formed on a certain circle at the edge of the first-level platform portion 2; a plurality of metal posts 6 are evenly formed on a certain circle of the second-level platform portion 3, which are used to connect electroplating process equipment;

[0010] A plurality of second through holes 7 are evenly formed on the second-level platform portion 3;

[0011] The third-level platform portion 4 is formed into a plurality of conductive fingers 8 that are independent of each other and only connected at the roots, and each conductive finger 8 forms an angle inclined towards the positive disk surface; the fact that the conductive fingers 8 are independent of each other and only connected at the roots can make the overall product flatter and the rubber coating can be more firm;

[0012] A plurality of conductive structures 9 are formed at positions close to the ends of each conductive finger 8 and are electrically connected to the conductive structure, which are used for conduction during the electroplating process;

[0013] A rubber layer 10 is coated on the metal annular disk 1;

[0014] Among them, the rubber layer 10 fills the first through holes 5 and the second through holes 7, and the metal posts 6 and the conductive structures 9 do not cover the rubber layer 10.

[0015] The first through holes 5 and the second through holes 7 are used to make the adhesion between the rubber and the metal parts better and not loose after the rubber and the metal parts are integrally formed by hot vulcanization.

[0016] Preferably, further improving the wafer electroplating process seal, the height of the second-level platform portion 3 is greater than the height of the first-level platform portion 2 and the height of the third-level platform portion 4. When viewed from the side, the first-level platform portion to the third-level platform portion are arranged to form an approximate "convex" shape.

[0017] Preferably, further improving the wafer electroplating process seal, the thickness range of the first-level platform portion 2 is 0.5 mm to 0.6 mm, preferably 0.5 mm, 0.55 mm or 0.6 mm, the thickness range of the second-level platform portion 3 is 1.2 mm to 1.4 mm, preferably 1.2 mm, 1.3 mm or 1.4 mm, and the thickness range of the third-level platform portion 4 is 0.3 mm to 0.5 mm, preferably 0.3 mm, 0.4 mm or 0.5 mm.

[0018] Preferably, further improving the wafer electroplating process seal, the diameter range of the first through holes 5 is 0.8 mm to 1.2 mm, preferably 0.8 mm, 0.9 mm, 1.0 mm, 1.1 mm or 1.2 mm, and the spacing distance between the first through holes 5 ranges from 0.8 mm to 1.2 mm, preferably 0.8 mm, 0.9 mm, 1.0 mm, 1.1 mm or 1.2 mm.

[0019] Preferably, further improving the wafer electroplating process seal, the metal posts 6 are formed into a columnar shape with large ends and a small middle.

[0020] Preferably, further improve the wafer electroplating process seal. The number range of the metal posts 6 is from 18 to 26, preferably 18, 19, 20, 21, 22, 23, 24, 25 or 26. The height range of the metal posts 6 is from 3.8 mm to 4.2 mm, preferably 3.8 mm, 3.9 mm, 4.0 mm, 4.1 mm or 4.2 mm.

[0021] Preferably, further improve the wafer electroplating process seal. The diameter range of the second through holes 7 is from 0.8 mm to 1.2 mm, preferably 0.8 mm, 0.9 mm, 1.0 mm, 1.1 mm or 1.2 mm. The spacing distance between the second through holes 7 ranges from 6 mm to 10 mm, preferably 6 mm, 7 mm, 8 mm, 9 mm or 10 mm. It should be noted that the spacing distance between the second through holes 7 should not be too dense, otherwise the strength of the metal parts is insufficient and they are prone to deformation.

[0022] Preferably, further improve the wafer electroplating process seal. The inclination angle range of the third-stage table portion 4 is from 5 degrees to 30 degrees.

[0023] Preferably, further improve the wafer electroplating process seal. The width range of the conductive structure 9 is from 0.2 mm to 0.5 mm, preferably 0.2 mm, 0.3 mm, 0.4 mm or 0.5 mm. The height range of the conductive structure 9 is from 0.3 mm to 0.5 mm, preferably 0.3 mm, 0.4 mm or 0.5 mm. The distance range between the conductive structure 9 and the end of the conductive finger 8 is from 1 mm to 2 mm. The width range of the conductive finger 8 is from 1 mm to 1.5 mm, preferably 1 mm, 1.1 mm, 1.2 mm, 1.3 mm, 1.4 mm or 1.5 mm. The separation gap range between the conductive fingers 8 is from 0.03 mm to 0.2 mm, preferably 0.03 mm, 0.04 mm, 0.05 mm, 0.06 mm, 0.07 mm, 0.08 mm, 0.09 mm, 0.1 mm, 0.11 mm, 0.12 mm, 0.13 mm, 0.14 mm, 0.15 mm, 0.16 mm, 0.17 mm, 0.168 mm, 0.19 mm or 0.2 mm.

[0024] Preferably, further improve the wafer electroplating process seal, and further include:

[0025] A fixing groove 11, which is formed on the rubber layer 10 at the top edge of the first-stage table portion 2. The fixing groove 11 can be designed as a "V"-shaped groove for fixing. The groove depth range is from 1.3 mm to 1.5 mm, and the width range at the maximum opening position of the groove is from 1.9 mm to 2.1 mm, preferably 1.9 mm, 2.0 mm or 2.1 mm.

[0026] Preferably, further improving the wafer electroplating process seal, further comprising: a plurality of rubber positioning blocks formed on the rubber layer 10 on the third-stage table portion 4.

[0027] Preferably, further improving the wafer electroplating process seal, further comprising: two sealing ribs formed on both sides of the conductive structure 9; the height range of the first sealing rib on the side close to the center of the metal annular disc 1 is 0.05 mm to 0.1 mm, and the height range of the second sealing rib on the side far from the center of the metal annular disc 1 is 0.1 to 0.2 mm.

[0028] The present utility model can at least achieve the following technical effects

[0029] 1. In the present utility model, the conductive (metal annular disc) and the seal (rubber layer) form an integrated structure, reducing the problem of conductive voltage edges, thereby increasing the utilization rate of the wafer.

[0030] 2. When the present utility model is used and installed, it is installed through the metal posts 6, reducing the steps of installing conductive metal teeth compared with the prior art, and being simpler and more convenient.

[0031] 3. In the present utility model, the structure in which the rubber layer 10 fills the first through hole 5 and the second through hole 7 makes the metal annular disc 1 and the rubber layer 10 form an integrated structure, avoiding loosening and forming fastening.

[0032] 4. The present utility model is designed with 2 to 5 rubber positioning blocks for positioning the wafer, which is convenient for operation and can improve work efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The drawings of the present utility model are intended to show the general characteristics of the methods, structures, and / or materials used in specific exemplary embodiments of the present utility model, and supplement the description in the specification. However, the drawings of the present utility model are schematic diagrams not drawn to scale, and thus may not be able to accurately reflect the precise structure or performance characteristics of any given embodiment. The drawings of the present utility model should not be construed as limiting or restricting the scope of the numerical values or properties covered by the exemplary embodiments according to the present utility model. The following further details the present utility model in conjunction with the drawings and specific embodiments:

[0034] Figure 1 It is a schematic diagram of the metal annular disc of the present utility model.

[0035] Figure 2 is Figure 1 a partial enlarged view of

[0036] Figure 3 It is a schematic cross-sectional view of the present utility model.

[0037] DESCRIPTION OF THE REFERENCE NUMERALS

[0038] Metal annular disc 1

[0039] The first - stage table part 2

[0040] The second - stage table part 3

[0041] The third - stage table part 4

[0042] The first through - hole 5

[0043] The metal column 6

[0044] The second through - hole 7

[0045] The conductive finger 8

[0046] The conductive structure 9

[0047] The rubber layer 10. Specific embodiments

[0048] The following describes the embodiments of the present utility model through specific examples. Those skilled in the art can fully understand other advantages and technical effects of the present utility model from the content disclosed in this specification. The present utility model can also be implemented or applied through different specific embodiments. The details in this specification can also be applied based on different viewpoints and various modifications or changes can be made without departing from the overall design concept of the utility model. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other. The following exemplary embodiments of the present utility model can be implemented in many different forms and should not be construed as being limited only to the specific embodiments described herein. It should be understood that these embodiments are provided to make the disclosure of the present utility model thorough and complete and to fully convey the technical solutions of these exemplary specific embodiments to those skilled in the art.

[0049] It should be understood that when an element is referred to as being "connected" or "coupled" to another element, the element can be directly connected or coupled to the other element, or there may be an intermediate element. Different from this, when an element is referred to as being "directly connected" or "directly coupled" to another element, there is no intermediate element. In all the drawings, the same reference numerals always represent the same elements. As used herein, the term "and / or" includes any combination and all combinations of one or more of the related listed items. Other words used to describe the relationship between elements or layers should be interpreted in the same way. For example, "between... " and "directly between... ", "adjacent to... " and "directly adjacent to... ", "on... " and "directly on... ", etc. Embodiment

[0050] Reference Figure 1 Combined with Figure 2 As shown, the present utility model provides a wafer electroplating process seal, including:

[0051] A metal annular disc 1, on its front surface, a first-stage step portion to a third-stage step portion 2 to 4 are sequentially formed from the edge to the center of the circle;

[0052] A plurality of first through holes 5 are uniformly formed on a certain circle at the edge of the first-stage step portion 2;

[0053] A plurality of metal posts 6 are uniformly formed on a certain circle of the second-stage step portion 3, which are used to connect electroplating process equipment;

[0054] A plurality of second through holes 7 are uniformly formed on the second-stage step portion 3;

[0055] The third-stage step portion 4 is formed into a plurality of conductive fingers 8 that are independent of each other and only connected at the roots, and each conductive finger 8 forms an angle inclined towards the front surface direction;

[0056] A plurality of conductive structures 9 are formed at positions close to the ends of the respective conductive fingers 8 and are electrically connected to the conductive structures. The conductive structures 9 are formed as conductive bosses;

[0057] A rubber layer 10 is coated on the metal annular disc 1;

[0058] Preferably, the overall thickness range of the rubber layer coated on the back surface of the metal annular disc is 0.4 to 0.8 mm; the overall height of the rubber layer coated on the first-stage step portion 2 and the second-stage step portion 3 on the front surface of the metal annular disc is the same.

[0059] Among them, the rubber layer 10 fills the first through holes 5 and the second through holes 7, and the metal posts 6 and the conductive structures 9 are not covered by the rubber layer 10.

[0060] Reference Figure 3 As shown, the height of the second-stage step portion 3 is greater than the height of the first-stage step portion 2 and the height of the third-stage step portion 4.

[0061] Preferably, the thickness range of the first-stage step portion 2 is 0.5 mm to 0.6 mm, the thickness range of the second-stage step portion 3 is 1.2 mm to 1.4 mm, the thickness range of the third-stage step portion 4 is 0.3 mm to 0.5 mm, the diameter range of the first through holes 5 is 0.8 mm to 1.2 mm, the interval distance range between the first through holes 5 is 0.8 mm to 1.2 mm, the diameter range of the second through holes 7 is 0.8 mm to 1.2 mm, and the interval distance range between the second through holes 7 is 6 mm to 10 mm.

[0062] Optionally, the metal posts 6 are formed into a columnar shape with large ends and a small middle. The number range of the metal posts 6 is 18 to 26, and the height range of the metal posts 6 is 3.8 mm to 4.2 mm.

[0063] Optionally, the inclination angle range of the third-stage step portion 4 is 5 degrees to 30 degrees.

[0064] Optionally, the conductive structure 9 is formed as a conductive boss. The width range of the conductive structure 9 is 0.2 mm to 0.5 mm, the height range of the conductive structure 9 is 0.3 mm to 0.5 mm, the distance range between the conductive structure 9 and the end of the conductive finger 8 is 1 mm to 2 mm, the width range of the conductive finger 8 is 1 mm to 1.5 mm, and the separation gap range between the conductive fingers 8 is 0.03 mm to 0.2 mm.

[0065] For further improving the above first embodiment, it further includes: a fixing groove 11 formed on the rubber layer 10 at the top edge of the first-stage table portion 2.

[0066] For further improving the above first embodiment, it further includes: a plurality of rubber positioning blocks formed on the rubber layer 10 on the third-stage table portion 4. The rubber positioning blocks cooperate to position the wafer or silicon wafer surrounded by them. It should be noted that the rubber positioning blocks can be arranged evenly or unilaterally.

[0067] For further improving the above first embodiment, it further includes: two sealing ribs formed on both sides of the conductive structure 9; the height range of the first sealing rib on the side closer to the center of the metal annular disc 1 is 0.05 mm to 0.1 mm, and the height range of the second sealing rib on the side farther from the center of the metal annular disc 1 is 0.1 to 0.2 mm.

[0068] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. It will also be understood that terms such as those defined in a general dictionary should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and not in an idealized or overly formal sense, unless expressly defined herein.

[0069] The above has described the present utility model in detail through specific embodiments and examples, but these do not constitute a limitation to the present utility model. Without departing from the principle of the present utility model, those skilled in the art can also make many deformations and improvements, which should also be regarded as the protection scope of the present utility model.

Claims

1. A wafer electroplating process seal, characterized in that: include: A metal annular disk (1), wherein a first-stage platform (2), a second-stage platform (3) and a third-stage platform (4) are sequentially formed on the front surface of the disk from the edge to the center of the circle; A plurality of first through holes (5) are evenly formed on a circle at the edge of the first stage portion (2); A plurality of metal pillars (6) are evenly formed on a circle of the second stage portion (3) and are used to connect electroplating process equipment; A plurality of second through holes (7) are evenly formed on the second stage portion (3); The third stage (4) is formed into a plurality of conductive fingers (8) which are independent of each other and connected only at their roots, and each conductive finger (8) is formed with an angle inclined toward the positive disk surface direction; A plurality of conductive structures (9) are formed in a one-to-one correspondence at positions close to the ends of each conductive finger (8) and are electrically connected to the conductive structures; A rubber layer (10) coated on the metal annular disk (1); The rubber layer (10) completely fills the first through hole (5) and the second through hole (7), and the metal column (6) and the conductive structure (9) do not cover the rubber layer (10).

2. The wafer electroplating process seal according to claim 1, characterized in that: The height of the second stage portion (3) is greater than the height of the first stage portion (2) and the height of the third stage portion (4).

3. The wafer electroplating process seal according to claim 1, characterized in that: The thickness of the first stage portion (2) is in the range of 0.5 mm to 0.6 mm, the thickness of the second stage portion (3) is in the range of 1.2 mm to 1.4 mm, and the thickness of the third stage portion (4) is in the range of 0.3 mm to 0.5 mm.

4. The wafer electroplating process seal according to claim 1, characterized in that: The diameter of the first through holes (5) ranges from 0.8 mm to 1.2 mm, and the spacing between the first through holes (5) ranges from 0.8 mm to 1.2 mm.

5. The wafer electroplating process seal according to claim 1, characterized in that: The metal column (6) is formed into a columnar shape with large ends and a small middle.

6. The wafer electroplating process seal according to claim 1, characterized in that: The number of metal pillars (6) ranges from 18 to 26, and the height of the metal pillars (6) ranges from 3.8 mm to 4.2 mm.

7. The wafer electroplating process seal according to claim 1, characterized in that: The diameter of the second through holes (7) ranges from 0.8 mm to 1.2 mm, and the spacing between the second through holes (7) ranges from 6 mm to 10 mm.

8. The wafer electroplating process seal according to claim 1, characterized in that: The inclination angle of the third stage (4) ranges from 5 degrees to 30 degrees.

9. The wafer electroplating process seal according to claim 1, characterized in that: The width of the conductive structure (9) is in the range of 0.2 mm to 0.5 mm, the height of the conductive structure (9) is in the range of 0.3 mm to 0.5 mm, the distance between the conductive structure (9) and the end of the conductive finger (8) is in the range of 1 mm to 2 mm, the width of the conductive finger (8) is in the range of 1 mm to 1.5 mm, and the spacing between the conductive fingers (8) is in the range of 0.03 mm to 0.2 mm.

10. The wafer electroplating process seal according to claim 1, characterized in that: Also includes: A fixing groove (11) is formed on the rubber layer (10) at the top edge of the first stage portion (2).

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