Supporting device for single crystal growth and single crystal growth equipment

Abstract

The utility model discloses a supporting device for single crystal growth and single crystal growth equipment, the supporting device for single crystal growth comprises a supporting body and a connecting assembly, and the supporting body comprises an inner layer supporting piece, a middle layer supporting piece and an outer layer supporting piece which are sequentially sleeved at intervals from inside to outside. The inner-layer supporting piece, the middle-layer supporting piece and the outer-layer supporting piece are connected through connecting assemblies so as to support the inner-layer supporting piece, the middle-layer supporting piece and the outer-layer supporting piece. According to the supporting device for single crystal growth, the inner-layer supporting piece, the middle-layer supporting piece and the outer-layer supporting piece are sequentially arranged at intervals in a sleeving mode from inside to outside, and the connecting assembly is connected with the inner-layer supporting piece, the middle-layer supporting piece and the outer-layer supporting piece, so that when the supporting body is in a high-temperature environment, the supporting body is not prone to deformation; according to the supporting device provided by the invention, the connecting assembly plays a role in supporting the inner-layer supporting piece, the middle-layer supporting piece and the outer-layer supporting piece, so that crystal defects caused by deformation of the supporting body are reduced, and therefore, the crystal yield is improved by the supporting device provided by the invention.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal growth, and particularly relates to a support device for single crystal growth and a single crystal growth device. Background Art

[0002] In the growth process of semiconductor crystal materials, especially in the field of semiconductor crystal growth such as gallium arsenide, indium phosphide, germanium, etc., gallium arsenide (chemical formula: GaAs) is a compound synthesized by two elements, gallium and arsenic, and is also an important compound semiconductor material in Group IIIA and Group VA. It is used to manufacture components such as microwave integrated circuits, infrared light-emitting diodes, semiconductor lasers, and solar cells.

[0003] Since the natural stock of gallium arsenide is scarce, the method of directly combining gallium and arsenic is usually adopted. Among them, the vertical gradient freezing method (VGF method) is the currently common method for synthesizing gallium arsenide single crystals. Specifically, when using the VGF method to synthesize gallium arsenide single crystals, the materials need to be sealed in an ampoule bottle, and then the sealed ampoule bottle is vertically placed in a single crystal synthesis furnace. It is very important here that there is a support device at the lower end of the ampoule bottle perpendicular to the ground plane, so that the ampoule bottle can be located at a suitable temperature zone position in the crystal growth furnace. The traditional support device is composed of a furnace core, a quartz round tube, a heat insulation sleeve and other structures arranged at intervals. The quartz small round tube is used as a support tube. The shape uniformity at high temperature, as well as the gap uniformity between the furnace core and the quartz round tube and between the quartz round tube and the heat insulation sleeve, has a crucial impact on the formation of gallium arsenide crystal defects. Since uniformity is the key point for uniform heat conduction, uneven heat conduction is likely to generate supercooling degree, thus easily forming crystal defects.

[0004] However, in a high-temperature environment, the support device is prone to deformation and collapse under the gravity of the ampoule bottle, so that the temperature zone position of the ampoule bottle changes, and the gap between the quartz round tube and the heat insulation sleeve needs to be adjusted by visual inspection, and the gap uniformity cannot be guaranteed, resulting in a high defect rate of the produced gallium arsenide crystals and affecting the overall yield.

[0005] Therefore, how to improve the crystal yield is a technical problem that needs to be solved urgently by those skilled in the art. Summary of the Utility Model

[0006] The purpose of the utility model is to provide a support device for single crystal growth and a single crystal growth device to improve the crystal yield.

[0007] The support device for single crystal growth provided by this application includes:

[0008] A support body, the support body includes an inner layer support member, a middle layer support member and an outer layer support member which are sequentially arranged at intervals from inside to outside;

[0009] A connecting component that connects the inner support member, the middle support member, and the outer support member to support the inner support member, the middle support member, and the outer support member.

[0010] Optionally, in a support device for single crystal growth, the connecting component includes a first connecting member, and the inner support member, the middle support member, and the outer support member are connected by the first connecting member, and the first connecting member is located at a first end in the axial direction of the support body.

[0011] Optionally, in a support device for single crystal growth, the connecting component further includes a second connecting member, and the inner support member, the middle support member, and the outer support member are connected by the second connecting member, and the second connecting member is located at a second end in the axial direction of the support body, and the first end and the second end are opposite ends in the axial direction of the support body.

[0012] Optionally, in a support device for single crystal growth, the connecting component further includes a third connecting member, and the inner support member, the middle support member, and the outer support member are connected by the third connecting member, and along the axial direction of the support body, the third connecting member is located between the first connecting member and the second connecting member.

[0013] Optionally, in a support device for single crystal growth:

[0014] Projected along the axial direction of the support body, the projections of the first connecting member and the second connecting member completely coincide or partially coincide; and / or

[0015] Projected along the axial direction of the support body, the projection of the first connecting member is spaced apart from the projection of the third connecting member.

[0016] Optionally, in a support device for single crystal growth, projected along the axial direction of the support body, the projections of the first connecting member and the second connecting member completely coincide, and there is one third connecting member between two adjacent first connecting members in the circumferential direction of the support body, and the third connecting member is located on the angular bisector with the center of the support body as the center of the circle between the two adjacent first connecting members;

[0017] There are multiple first connecting members, and the multiple first connecting members are evenly distributed around the circumferential direction of the support body;

[0018] There are multiple second connecting members, and the multiple second connecting members are evenly distributed around the circumferential direction of the support body;

[0019] There are multiple third connecting members, and the multiple third connecting members are evenly distributed around the circumferential direction of the support body.

[0020] Optionally, in a support device for single crystal growth:

[0021] A plurality of the first connecting members are provided, and the plurality of first connecting members are evenly distributed circumferentially around the support body; and / or

[0022] A plurality of the second connecting members are provided, and the plurality of second connecting members are evenly distributed circumferentially around the support body; and / or

[0023] A plurality of the third connecting members are provided, and the plurality of third connecting members are evenly distributed circumferentially around the support body; and / or

[0024] At least one of the first connecting member, the second connecting member, and the third connecting member is completely overlapped in the projection along the radial direction of the support body.

[0025] Optionally, in a support device for single crystal growth, it further includes a positioning boss adapted to the furnace core, and the positioning boss is located on the inner wall of the inner support member.

[0026] Optionally, in a support device for single crystal growth:

[0027] The positioning boss is provided on the first connecting member, the second connecting member, and / or the third connecting member along the radial extension direction of the support body; and / or

[0028] The length direction of the positioning boss extends along the axis direction of the support body.

[0029] Optionally, in a support device for single crystal growth, the support device for single crystal growth is a ceramic structure formed by integral processing.

[0030] Optionally, in a support device for single crystal growth, the end of the inner support member is provided with a support boss protruding outward from the support body, and the support boss is used to be adapted to the ampoule bottle.

[0031] A single crystal growth device includes a furnace core and a support device for single crystal growth adapted to the furnace core, and the support device for single crystal growth is the support device for single crystal growth described in any one of the above.

[0032] In the above technical solution, the support device for single crystal growth provided by the present utility model includes a support body and a connection assembly. The support body includes an inner support member, a middle support member, and an outer support member that are sequentially and spaced apart from inside to outside. The inner support member, the middle support member, and the outer support member are connected by the connection assembly to support the inner support member, the middle support member, and the outer support member.

[0033] As can be seen from the above description, in the support device for single crystal growth provided in this application, the inner support member, the middle support member, and the outer support member are sequentially and spacedly sleeved from the inside to the outside, and the connection assembly connects the inner support member, the middle support member, and the outer support member. Thus, when the support body is in a high-temperature environment, the connection assembly plays a supporting role for the inner support member, the middle support member, and the outer support member, thereby reducing crystal defects caused by the deformation of the support body. Therefore, the support device provided in this application improves the crystal yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained according to the provided drawings.

[0035] Figure 1 Structural schematic diagram of the support device provided by the embodiment of the present invention;

[0036] Figure 2 For Figure 1 Structural schematic diagram of the support device shown along the A-A direction;

[0037] Figure 3 For Figure 1 Top view of the support device shown;

[0038] Figure 4 For Figure 3 Enlarged view of part B of the support device shown;

[0039] Figure 5 Axonometric view of the support device provided by the embodiment of the present invention.

[0040] Wherein Figures 1-5 In: 1 - Second connecting member, 2 - Positioning boss, 3 - Third connecting member, 301 - Third support block, 4 - Inner support member, 5 - First middle support member, 6 - Second middle support member, 7 - Outer support member, 8 - First connecting member, 10 - Support boss. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0041] The core of the present invention is to provide a support device for single crystal growth and a single crystal growth device to improve the crystal yield.

[0042] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the following will further elaborate on the present invention in conjunction with the drawings and embodiments.

[0043] Please refer to Figures 1 to 5 .

[0044] In a specific embodiment, the support device for single crystal growth provided by the specific embodiment of the present utility model includes a support body and a connection component. The support body includes an inner support member 4, a middle support member, and an outer support member 7 that are sequentially and spacedly sleeved from the inside to the outside.

[0045] To improve the support strength, preferably, the inner support member 4 is of a ceramic structure. Specifically, the end of the inner support member is provided with a support boss protruding outward from the support body, and the support boss is used to fit with the ampoule bottle. Specifically, the higher part of the innermost inner support member 4 serves as the support boss to directly contact the ampoule bottle to achieve support. Since a high-temperature resistant ceramic material is used, it will not deform at high temperatures, improving the uniformity of the temperature zone position of the ampoule bottle.

[0046] Of course, preferably, at least one of the middle support member and the outer support member 7 is processed from a ceramic material. The middle support member may include a cylindrical structure, or include at least two, as Figures 2 to 5 shown, the middle support member is provided with two cylindrical structures, namely a middle first support member 5 and a middle second support member 6 that are sequentially and spacedly sleeved.

[0047] The inner support member 4, the middle support member, and the outer support member 7 are connected by a connection component, and the connection component supports the inner support member 4, the middle support member, and the outer support member 7. Specifically, the connection component may include a plurality of support blocks, among which some support blocks connect the inner support member 4 and the middle support member, some support blocks connect adjacent middle support members, and another part of the support blocks connect the middle support member and the outer support member 7.

[0048] To improve the assembly efficiency, preferably, the support device is an integrally processed and formed structure. More preferably, the support device for single crystal growth is an integrally processed and formed ceramic structure. The integrally formed support device uses a high-temperature resistant ceramic material, effectively solving the concentricity problem of the furnace core set. The selection of the overall high-temperature resistant ceramic material for the support device solves the problem of deformation and collapse of the original quartz support tube at high temperatures, extending the service life of the support device. At the same time, the overall use of high-temperature resistant ceramic material has better thermal conductivity compared to the combination of traditional quartz round tubes and ceramic fiber insulation sleeves, improving the use safety of the support device.

[0049] As can be seen from the above description, in the support device for single crystal growth provided in the specific embodiment of the present application, the inner support member 4, the middle support member, and the outer support member 7 are sequentially sleeved at intervals from inside to outside, and the connection assembly connects the inner support member 4, the middle support member, and the outer support member 7. Thus, when the support body is in a high-temperature environment, the connection assembly plays a supporting role for the inner support member 4, the middle support member, and the outer support member 7, thereby reducing crystal defects caused by the deformation of the support body. Therefore, the support device provided in the present application improves the crystal yield.

[0050] Specifically, the support device provided in the present application can be used for VGF (vertical gradient freeze) single crystal growth.

[0051] In a specific embodiment, the connection assembly includes a first connecting member 8. The inner support member 4, the middle support member, and the outer support member 7 are connected by the first connecting member 8, and the first connecting member 8 is located at the first end in the axial direction of the support body. At this time, the first connecting member 8 is provided with a plurality of first support blocks. One of the first support blocks connects the inner support member 4 and the middle support member, another first support block connects the adjacent middle support member, and still another first support block connects the middle support member and the outer support member 7. Preferably, the first support blocks are located at the same height and are radially distributed along the support body.

[0052] In a specific embodiment, the connection assembly includes a second connecting member 1. The inner support member 4, the middle support member, and the outer support member 7 are connected by the second connecting member 1, and the second connecting member 1 is located at the second end in the axial direction of the support body. The first end and the second end are opposite ends in the axial direction of the support body. At this time, the second connecting member 1 is provided with a plurality of second support blocks. One of the second support blocks connects the inner support member 4 and the middle support member, another second support block connects the adjacent middle support member, and still another second support block connects the middle support member and the outer support member 7. Preferably, the second support blocks are located at the same height and are radially distributed along the support body.

[0053] By providing the first connecting member 8 and the second connecting member 1, the connection points inside the support body are increased, thereby reducing the deformation of the support body. Preferably, in the projection along the axial direction of the support body, the projections of the first connecting member 8 and the second connecting member 1 completely overlap or partially overlap. As Figure 1 and Figure 2 shown, when projected from top to bottom or from bottom to top, the projections of the first connecting member 8 and the second connecting member 1 completely overlap.

[0054] In a specific embodiment, the connecting component includes a third connecting member 3, and the inner layer support member 4, the middle layer support member, and the outer layer support member 7 are connected by a third support block 301. Along the axis direction of the support body, the third connecting member 3 is located between the first connecting member 8 and the second connecting member 1. Specifically, the middle layer support member can be arranged in the middle of the support body, that is, the distances between the first connecting member 8 and the second connecting member 1 from the third connecting member 3 are the same. The bottom, middle, and top of the support member are respectively designed with an integrated connection structure, so that each part is connected into an integrated structure, solving the problem of gap uniformity while retaining the gap without affecting the heat conduction performance.

[0055] At this time, the third connecting member 3 is provided with a plurality of third support blocks 301. One of the third support blocks 301 connects the inner layer support member 4 and the middle layer support member, another third support block 301 connects the adjacent middle layer support members, and still another third support block 301 connects the middle layer support member and the outer layer support member 7. Preferably, the third support blocks 301 are located at the same height and are radially distributed along the support body.

[0056] In a specific embodiment, when projected along the axis direction of the support body, the projection of the first connecting member 8 and the projection of the third connecting member 3 are arranged separately, that is, when projected along the axis direction of the support body, there is no overlapping part between the projection of the first connecting member 8 and the projection of the third connecting member 3. Of course, it is also possible that the projection of the first connecting member 8 and the projection of the third connecting member 3 completely overlap or partially overlap.

[0057] Preferably, a plurality of first connecting members 8 are provided, and the plurality of first connecting members 8 are evenly distributed circumferentially around the support body. For example, four first connecting members 8 are provided, and the included angle between two adjacent first connecting members 8 with the center of the support body as the center of the circle is 90 degrees.

[0058] A plurality of second connecting members 1 are provided, and the plurality of second connecting members 1 are evenly distributed circumferentially around the support body. As Figure 3 shown, four second connecting members 1 are provided, and the included angle between two adjacent second connecting members 1 with the center of the support body as the center of the circle is 90 degrees.

[0059] A plurality of third connecting members 3 are provided, and the plurality of third connecting members 3 are evenly distributed circumferentially around the support body. As Figure 3 shown, four third connecting members 3 are provided, and the included angle between two adjacent third connecting members 3 with the center of the support body as the center of the circle is 90 degrees.

[0060] In a specific embodiment, when projected along the axis direction of the support body, the projections of the first connecting member 8 and the second connecting member 1 completely overlap. And there is a third connecting member 3 provided between two circumferentially adjacent first connecting members 8 of the support body, and the third connecting member 3 is located on the angular bisector of the angle formed by the two adjacent first connecting members 8 with the center of the support body as the center of the circle. Wherein the connection line between the center of the circle and the first connecting member 8, the second connecting member 1 and the third connecting member 3 specifically may refer to the connection line with the midpoints of the first connecting member 8, the second connecting member 1 and the third connecting member 3. As Figure 3 shown, the third connecting member 3 is at a 45-degree angle relative to the first connecting member 8 and the second connecting member 1. Such a setting strengthens the overall stability. The projections of the first connecting member 8 and the second connecting member 1 completely overlap, and the first connecting member 8 and the second connecting member 1 are arranged in parallel. For example, both the first connecting member 8 and the second connecting member 1 are parallel to the horizontal plane. Of course, the first connecting member 8, the second connecting member 1 and the third connecting member 3 can all be arranged parallel to the horizontal plane, ensuring uniform gaps between the respective support tubes and the thermal insulation sleeves (the inner layer support member 4, the middle layer support member and the outer layer support member 7), protecting the ampoule bottles at appropriate temperature zones, with better temperature uniformity, and improving the furnace loading work efficiency of the operator.

[0061] In a specific embodiment, at least one of the first connecting member 8, the second connecting member 1 and the third connecting member 3 completely overlaps when projected along the radial direction of the support body. As Figure 3 shown, the projections of the first connecting member 8, the second connecting member 1 and the third connecting member 3 all completely overlap when projected along the radial direction of the support body respectively.

[0062] In a specific embodiment, the support device further includes a positioning boss 2 adapted to the furnace core, and the positioning boss 2 is located on the inner wall of the inner layer support member 4. An inner wall boss at the same position as the connection step is designed on the innermost inner wall, which is matched with the size of the furnace core to ensure the coaxiality of the furnace core and the support member, and solve the problem of the uniformity of the gap between the furnace core and the support member.

[0063] The first connecting member 8, the second connecting member 1 and / or the third connecting member 3 are provided with positioning bosses 2 along the radial extension direction of the support body. Specifically, each first connecting member 8 is provided with a positioning boss 2 along the radial extension direction of the support body, each second connecting member 1 is provided with a positioning boss 2 along the radial extension direction of the support body, and each third connecting member 3 is provided with a positioning boss 2 along the radial extension direction of the support body.

[0064] To improve the installation stability, preferably, the length direction of the positioning boss 2 extends along the axis direction of the support body.

[0065] By providing the positioning boss 2, the problem that the operator needs to visually judge and align the position of the furnace core during furnace loading is solved, the furnace loading speed is increased, the defects of the produced gallium arsenide crystals are reduced by 10%-15%, and the labor efficiency is increased by 20%-30%.

[0066] After testing in the processing of 4-inch silicon-doped gallium arsenide crystals, when the support device provided by this application was used for 16 furnace runs, the loading time consumed was 3.8 hours, and the proportion of crystal defects was 11.69%. When using the traditional furnace core group and the traditional quartz support tube for 16 furnace runs, the loading time consumed was 5.1 hours, and the proportion of crystal defects was 23.16%. Compared with the traditional method, the crystal defects decreased by 11.47%, and the labor efficiency increased by 25.49%.

[0067] A single crystal growth device provided by this application includes a furnace core and a support device for single crystal growth adapted to the furnace core, wherein the support device for single crystal growth is any one of the above-mentioned support devices for single crystal growth. The specific structure of the support device for single crystal growth has been described above. This application includes the above-mentioned support device for single crystal growth and also has the above-mentioned technical effects.

[0068] In this specification, each embodiment is described in a progressive manner. The key point of each embodiment is to illustrate the differences from other embodiments. For the same or similar parts among the embodiments, reference can be made to each other.

[0069] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be obvious to those skilled in the art. The general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A support device for single crystal growth, characterized in that: include: A support body, the support body comprising an inner support member (4), a middle support member and an outer support member (7) which are sequentially spaced from the inside to the outside; A connection component, wherein the connection component connects the inner support member (4), the middle support member and the outer support member (7) to support the inner support member (4), the middle support member and the outer support member (7).

2. The support device for single crystal growth according to claim 1, characterized in that: The connection assembly comprises a first connection member (8), the inner layer support member (4), the middle layer support member and the outer layer support member (7) are connected via the first connection member (8), and the first connection member (8) is located at the first end of the support body in the axial direction.

3. The support device for single crystal growth according to claim 2, characterized in that: The connection assembly also includes a second connection member (1), and the inner layer support member (4), the middle layer support member and the outer layer support member (7) are connected via the second connection member (1), and the second connection member (1) is located at the second end of the axial direction of the support body, and the first end and the second end are opposite ends of the axial direction of the support body.

4. The support device for single crystal growth according to claim 3, characterized in that: The connection assembly also includes a third connection member (3), and the inner layer support member (4), the middle layer support member and the outer layer support member (7) are connected via the third connection member (3). Along the axial direction of the support body, the third connection member (3) is located between the first connection member (8) and the second connection member (1).

5. The support device for single crystal growth according to claim 4, characterized in that: Projected along the axis direction of the supporting body, the projections of the first connecting member (8) and the second connecting member (1) completely overlap or partially overlap; and / or Projected along the axis direction of the supporting body, the projection of the first connecting member (8) is isolated from the projection of the third connecting member (3).

6. The support device for single crystal growth according to claim 4, characterized in that: Projected along the axis direction of the support body, the projections of the first connecting member (8) and the second connecting member (1) completely overlap, and a third connecting member (3) is provided between two adjacent first connecting members (8) in the circumferential direction of the support body, and the third connecting member (3) is located on the angular bisector of two adjacent first connecting members (8) with the center of the support body as the center; There are a plurality of the first connecting members (8), and the plurality of the first connecting members (8) are evenly distributed around the circumference of the supporting body; There are a plurality of the second connecting members (1), and the plurality of the second connecting members (1) are evenly distributed around the circumference of the supporting body; A plurality of the third connecting members (3) are provided, and the plurality of the third connecting members (3) are evenly distributed around the circumference of the supporting body.

7. The support device for single crystal growth according to claim 4, characterized in that: There are a plurality of the first connecting members (8), and the plurality of the first connecting members (8) are evenly distributed around the circumference of the supporting body; and / or There are a plurality of the second connecting members (1), and the plurality of the second connecting members (1) are evenly distributed around the circumference of the supporting body; and / or There are a plurality of the third connecting members (3), and the plurality of the third connecting members (3) are evenly distributed around the circumference of the supporting body; and / or At least one of the first connecting member (8), the second connecting member (1) and the third connecting member (3) is completely overlapped when projected along the radial direction of the supporting body.

8. The support device for single crystal growth according to claim 4, characterized in that: It also comprises a positioning boss (2) adapted to the furnace core, wherein the positioning boss (2) is located on the inner wall of the inner layer support member (4).

9. The support device for single crystal growth according to claim 8, characterized in that: The first connecting member (8), the second connecting member (1) and / or the third connecting member (3) are provided with the positioning boss (2) along the radial extension direction of the supporting body; and / or The length direction of the positioning boss (2) extends along the axial direction of the supporting body.

10. The single crystal growth support device according to any one of claims 1 to 9, characterized in that: The support device for single crystal growth is an integrally processed ceramic structure.

11. The single crystal growth support device according to claim 10, characterized in that The end of the inner layer support member (4) is provided with a support boss protruding outward from the support body, and the support boss is used to fit with an ampoule bottle.

12. A single crystal growth device, characterized in that: It comprises a furnace core and a supporting device for single crystal growth adapted to the furnace core, wherein the supporting device for single crystal growth is the supporting device for single crystal growth described in any one of claims 1-11.

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