Rectifier and Mosfet power device thereof

Abstract

The utility model provides a rectifier and a Mosfet power device thereof, the Mosfet power device comprises a circuit board, a first output element and two second output elements, the first output element is symmetrically and parallelly provided with two rows of Mosfet chips, the two rows of Mosfet chips are spaced by a preset distance, the first output element is provided with a plurality of Mosfet chips, and the second output element is provided with a plurality of Mosfet chips. The chips in each column are arranged at equal intervals and are electrically connected with the first output element; the second output elements are symmetrically arranged on the two sides of the first output element at intervals, the chips in each column are electrically connected with the second output elements on the same side, and the second output elements are used for guiding out internal current and dissipating heat after being attached to a radiator of the rectifier; the circuit board is stacked on the second output element, and each chip is electrically connected with the circuit board. According to the utility model, a symmetrical structure can be formed, the current sharing effect can be ensured, the heat dissipation performance is good, and the device is suitable for large-current loading.

Description

Technical Field

[0001] The utility model relates to the technical field of rectifying elements, and particularly relates to a rectifier and a Mosfet power device thereof. Background Art

[0002] Currently, on industrial low-voltage high-current rectifiers, Mosfet modules are used to output rectification. The current that existing Mosfet modules can carry under load for a long time is generally below 300A. When applied to high currents, multiple units need to be connected in parallel.

[0003] Due to the design defects of the self-structure of existing Mosfet modules, it is difficult to control current sharing and the heat dissipation efficiency is not high, resulting in the difficulty of widespread application of Mosfet modules in high-power industries. Summary of the Utility Model

[0004] In view of this, the purpose of the utility model is to provide a rectifier and a Mosfet power device thereof, to solve the problem that due to the design defects of the self-structure of existing Mosfet modules, it is difficult to control current sharing and the heat dissipation efficiency is not high, resulting in the difficulty of widespread application of Mosfet modules in high-power industries.

[0005] To solve the above technical problems, the technical solution adopted by the utility model is:

[0006] A Mosfet power device of the utility model includes a circuit board, a first output element, and two second output elements arranged in parallel. The first output element symmetrically and parallelly arranges two columns of Mosfet chips. The two columns of Mosfet chips are spaced apart by a preset distance. The second output element within the preset distance is used to conduct external current. The Mosfet chips in each column are equally spaced and are all electrically connected to the first output element;

[0007] The second output elements are arranged symmetrically and alternately on both sides of the first output element, and each second output element and one of the columns of Mosfet chips are located on the same side of the first output element. The Mosfet chips in each column are all electrically connected to the second output element on the same side. The second output element is used to export internal current and dissipate heat after being attached to the radiator of the rectifier;

[0008] The circuit board is provided with a first through hole. The two columns of Mosfet chips pass through the first through hole. The circuit board is laminated on the second output element. Each Mosfet chip is electrically connected to the circuit board.

[0009] Preferably, the first output component includes a strip-shaped flat base, and convex strips are arranged on the flat base along the long side direction thereof within the preset distance, and the external current is introduced into the Mosfet power device through the convex strips.

[0010] More preferably, the long side length of the convex strip is shorter than the long side length of the flat base, and the convex strip is centered on the flat base, and a notch is formed after the middle of the convex strip is disconnected.

[0011] More preferably, the flat base and the convex strip are integrally formed into a T shape.

[0012] Preferably, an insulating plate is further included, and the insulating plate is located below the first output component and is attached to the first output component, and the other side of the insulating plate is used for attaching to the radiator.

[0013] More preferably, the second output component is flat, the Mosfet chip is electrically connected to the second output component on the top surface of the second output component, and the bottom surface of the second output component and the bottom surface of the insulating plate are located on the same horizontal plane.

[0014] Even more preferably, a plurality of first fixing holes are uniformly arranged on the second output component, a plurality of second fixing holes are correspondingly arranged on the circuit board, the second fixing holes and the corresponding first fixing holes are coaxial, and the second fixing holes and the first fixing holes are used to fixedly connect the second output component and the circuit board to the radiator through screws.

[0015] More preferably, third fixing holes are uniformly arranged at both ends of the flat base and at positions opposite to the notch, fourth fixing holes are correspondingly arranged on the circuit board, the fourth fixing holes and the corresponding third fixing holes are coaxial, and the third fixing holes and the fourth fixing holes are used to fixedly connect the first output component and the circuit board to the radiator through screws.

[0016] Preferably, both the first output component and the second output component are made of copper and nickel-plated on the surface.

[0017] A rectifier according to the present invention includes a positive radiator and a negative radiator, and a synchronization module is arranged on the positive radiator or the negative radiator, and the synchronization module is a Mosfet power device as described above.

[0018] The beneficial effects of a Mosfet power device according to the present invention compared with the prior art are mainly reflected in:

[0019] The utility model is provided with a circuit board, a first output component, and two second output components arranged in parallel. The first output component is symmetrically and parallelly provided with two columns of Mosfet chips. The Mosfet chips in each column are arranged at equal intervals and are all electrically connected to the first output component. There is a preset distance between the two columns of Mosfet chips. The second output component within the preset distance is used to conduct external current. The second output components are arranged symmetrically and alternately on both sides of the first output component, and each of the second output components is located on the same side of the first output component as one of the columns of Mosfet chips. The Mosfet chips in each column are electrically connected to the second output component on the same side. The circuit board is laminated on the second output component, and each Mosfet chip is electrically connected to the circuit board. In this way, the Mosfet power device of the utility model can form a symmetrical structure, thereby ensuring the current sharing effect;

[0020] By fitting two of the second output components to the radiator of the rectifier for current diversion and heat dissipation, on the one hand, it provides sufficient heat dissipation area, and on the other hand, by directly contacting the second output components with the radiator, it can effectively improve the heat dissipation efficiency. It has good heat dissipation performance and can be applied to high-current load. Therefore, it can solve the problems that in the existing Mosfet module, due to the design defects of its own structure, it is difficult to control the current sharing and the heat dissipation efficiency is not high, resulting in the difficulty of the Mosfet module to be widely used in high-power industries. Description of the Drawings

[0021] The above and other objects, features, and advantages of the present utility model will become clearer through the preferred embodiments of the present utility model shown in the drawings. The same reference numerals in all the drawings indicate the same parts, and the drawings are not deliberately drawn to scale in actual size, with the focus on showing the gist of the present utility model.

[0022] Figure 1 A three-dimensional structure of a Mosfet power device provided by an embodiment of the present utility model Figure 1 ;

[0023] Figure 2 A three-dimensional structure of a Mosfet power device provided by an embodiment of the present utility model Figure 2 ;

[0024] Figure 3 A front view of a Mosfet power device provided by an embodiment of the present utility model; Description of the Drawings:

[0026] Circuit board 1, first through hole 101, second fixing hole 102, fourth fixing hole 103;

[0027] The first output element 2, the flat base 201, the convex strip 202, the notch 203, the third fixing hole 204, the second output element 3, the first fixing hole 301;

[0028] Mosfet chip 4, insulating board 5. DETAILED DESCRIPTION

[0029] The technical scheme of the utility model is further described in detail below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the utility model and implement it, but the examples given are not intended to limit the utility model. In the present embodiments, it should be understood that the orientations or positional relationships indicated by terms such as "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", and "outside" are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the utility model, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the utility model.

[0030] It should be noted that when an element is considered to be "connected" to another element, it may be directly connected to the other element and integrated therewith, or there may be an intermediate element at the same time. The terms "installed", "one end", "the other end" and similar expressions used in this utility model are for illustrative purposes only.

[0031] This embodiment provides a MOSFET power device, which is applied to a rectifier, such as Figures 1 to 3 As shown, it includes a circuit board 1, a first output element 2 and two second output elements 3 arranged in parallel, the first output element 2 is symmetrically and parallelly arranged with two rows of Mosfet chips 4, the two rows of Mosfet chips 4 are separated by a preset distance, the second output elements 3 within the preset distance are used to conduct external current, and the Mosfet chips 4 in each row are arranged at equal intervals and are electrically connected to the first output element 2;

[0032] The second output elements 3 are symmetrically arranged on both sides of the first output element 2, and each of the second output elements 3 and one of the rows of Mosfet chips 4 are located on the same side of the first output element 2, and the Mosfet chips 4 in each row are electrically connected to the second output elements 3 on the same side. The second output elements 3 are used to derive internal current and dissipate heat after being attached to the heat sink of the rectifier;

[0033] The circuit board 1 is provided with a first through hole 101 , and two rows of Mosfet chips 4 pass through the first through hole 101 . The circuit board 1 is stacked on the second output element 3 , and each Mosfet chip 4 is electrically connected to the circuit board 1 .

[0034] The utility model is provided with a circuit board 1, a first output component 2, and two second output components 3 arranged in parallel. The first output component 2 is symmetrically and parallelly provided with two columns of Mosfet chips 4. The Mosfet chips 4 in each column are arranged at equal intervals and are electrically connected to the first output component 2. There is a preset distance between the two columns of Mosfet chips 4. The second output components 3 within the preset distance are used to conduct external current. The second output components 3 are arranged symmetrically and alternately on both sides of the first output component 2, and each second output component 3 is located on the same side of the first output component 2 as one of the columns of Mosfet chips 4. The Mosfet chips 4 in each column are electrically connected to the second output component 3 on the same side. The circuit board 1 is laminated on the second output component 3, and each Mosfet chip 4 is electrically connected to the circuit board 1. In this way, the Mosfet power device of the utility model can form a symmetrical structure, thereby ensuring the current sharing effect.

[0035] By fitting two second output components 3 with the radiator of the rectifier for current diversion and heat dissipation, on the one hand, it provides sufficient heat dissipation area, and on the other hand, the direct contact between the second output component 3 and the radiator can effectively improve the heat dissipation efficiency. It has good heat dissipation performance and can be applied to high-current load. Specifically, it can be applied to a current load of about 1000A at most. Therefore, it can solve the problems that in the existing Mosfet module, due to the design defects of its own structure, it is difficult to control the current sharing and the heat dissipation efficiency is not high, resulting in the difficulty of widely applying the Mosfet module in high-power industries.

[0036] It should be noted that in the Mosfet power device, the electrical connection is achieved by welding different pins of the Mosfet chip 4 to the circuit board 1 and the second output component 3 respectively, and the substrate of the Mosfet chip 4 is welded to the first output component 2 to achieve electrical connection. In this way, the relative fixation of the circuit board 1, the first output component 2, and the second output component 3 is also realized through the two columns of Mosfet chips 4.

[0037] In a preferred embodiment, the first output component 2 includes a strip-shaped flat base 201. Along the long side direction of the flat base 201, a rib 202 is provided within a preset distance. The external current is introduced into the Mosfet power device through the rib 202. The external current is first conducted by the rib 202 to the flat base 201, and then led to the two columns of Mosfet chips 4 by the flat base 201, and then flows to the second output component 3 through the Mosfet chips 4. Preferably, the flat base 201 and the rib 202 are integrally formed in a T shape, which reduces the processing cost and avoids the influence of processing technology differences on the current conduction uniformity of the first output component 2. Specifically, the rib 202 is detachably connected to the external conductive element.

[0038] Further, the length of the long side of the rib 202 is shorter than that of the long side of the flat base 201, and the rib 202 is centered on the flat base 201. After the middle of the rib 202 is disconnected, a notch 203 is formed, so that fixing positions can be reserved at both ends and in the middle of the flat base 201 for fixing the first output element 2, and the fixing uniformity and stability can be ensured. As an example, third fixing holes 204 are uniformly arranged at both ends of the flat base 201 and opposite to the notch 203. Specifically, the third fixing holes 204 at both ends of the flat base 201 are symmetric with respect to the third fixing hole 204 opposite to the notch 203. The circuit board 1 is correspondingly provided with fourth fixing holes 103, and the fourth fixing holes 103 are coaxial with the corresponding third fixing holes 204. The third fixing holes 204 and the fourth fixing holes 103 are used to fixedly connect the first output element 2 and the circuit board 1 to the radiator by passing fixing screws therethrough.

[0039] In another preferred embodiment, the Mosfet power device further includes an insulating plate 5. The insulating plate 5 is located below the first output element 2 and is attached to the first output element 2 to prevent current from directly conducting through the first output element 2 and the radiator, ensuring the insulation performance of the first output element 2. The other side of the insulating plate 5 is used to be attached to the radiator. On the one hand, this embodiment can ensure that the current can flow to the two columns of Mosfet chips 4 respectively after passing through the first output element 2, ensuring the current sharing effect. On the other hand, by attaching the two sides of the insulating plate 5 to the first output element 2 and the radiator respectively, the heat transfer efficiency can be improved through this laminated structure, and the heat dissipation area in direct contact with the radiator can be increased, thereby improving the heat dissipation efficiency. Specifically, the insulating plate 5 is a ceramic plate and is detachably connected to the first output element 2.

[0040] Further, the second output element 3 is flat. The Mosfet chips 4 are electrically connected to the second output element 3 on the top surface of the second output element 3. The bottom surface of the second output element 3 is on the same horizontal plane as the bottom surface of the insulating plate 5. In this way, when the bottom surface of the insulating plate 5 is attached to the surface of the radiator during installation, it can also ensure that the bottom surface of the second output element 3 is attached to the surface of the radiator, thus facilitating installation. As an example, a plurality of first fixing holes 301 are uniformly arranged on the second output element 3. The circuit board 1 is correspondingly provided with a plurality of second fixing holes 102. The second fixing holes 102 are coaxial with the corresponding first fixing holes 301. The second fixing holes 102 and the first fixing holes 301 are used to fixedly connect the second output element 3 and the circuit board 1 to the radiator by passing fixing screws therethrough. Preferably, the first fixing holes 301 are arranged at equal intervals.

[0041] In another preferred embodiment, both the first output element 2 and the second output element 3 are made of copper and are surface nickel-plated, which plays an anti-corrosion role, can also improve the conductivity of the elements, and at the same time makes the appearance color more beautiful.

[0042] In addition, an embodiment of a rectifier is provided, which includes a positive radiator and a negative radiator. A synchronization module is provided on the positive radiator or the negative radiator, and the synchronization module is a Mosfet power device as described above. The rectifier of this embodiment adopts the above-mentioned Mosfet power device and has the same beneficial effects as the above-mentioned Mosfet power device, which will not be elaborated here.

[0043] In this specification, unless otherwise clearly specified and defined, the first feature being "on" or "under" the second feature may mean that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below" and "beneath" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply indicates that the first feature has a lower horizontal height than the second feature.

[0044] In the description of this specification, the description with reference to terms such as "preferred embodiment", "another embodiment", "other embodiments" or "specific examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0045] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present application. Those of ordinary skill in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present application.

Claims

1. A Mosfet power device, applied to a rectifier, characterized in that: It comprises a circuit board, a first output element and two second output elements arranged in parallel, wherein the first output element is symmetrically and parallelly provided with two rows of Mosfet chips, the two rows of Mosfet chips are separated by a preset distance, the second output elements within the preset distance are used to conduct external current, and the Mosfet chips in each row are arranged at equal intervals and are electrically connected to the first output element; The second output elements are symmetrically arranged on both sides of the first output element, and each of the second output elements and one of the columns of the Mosfet chips are located on the same side of the first output element, and the Mosfet chips in each column are electrically connected to the second output elements on the same side, and the second output elements are used to derive internal current and dissipate heat after being attached to the heat sink of the rectifier; The circuit board is provided with a first through hole, the two rows of Mosfet chips pass through the first through hole, the circuit board is stacked on the second output element, and each of the Mosfet chips is electrically connected to the circuit board.

2. A Mosfet power device according to claim 1, characterized in that: The first output element comprises a strip-shaped flat plate base, wherein the flat plate base is provided with convex strips within the preset distance along the long side direction thereof, and the external current is introduced into the MOSFET power device through the convex strips.

3. A Mosfet power device according to claim 2, characterized in that: The length of the long side of the convex strip is shorter than the length of the long side of the flat plate base, and the convex strip is centrally located on the flat plate base, and a notch is formed after the middle of the convex strip is broken.

4. A Mosfet power device according to claim 2, characterized in that: The flat plate base and the convex strip are integrally formed in a T-shape.

5. A Mosfet power device according to claim 1, characterized in that: It also includes an insulating plate, which is located below the first output element and is attached to the first output element, and the other side of the insulating plate is used to be attached to the heat sink.

6. A Mosfet power device according to claim 5, characterized in that: The second output element is in the shape of a plate, the Mosfet chip is electrically connected to the second output element on the top surface of the second output element, and the bottom surface of the second output element and the bottom surface of the insulating plate are located on the same horizontal plane.

7. A Mosfet power device according to claim 6, characterized in that: The second output element is evenly provided with a plurality of first fixing holes, and the circuit board is correspondingly provided with a plurality of second fixing holes, the second fixing holes are coaxial with the corresponding first fixing holes, and the second fixing holes and the first fixing holes are used to fix the second output element and the circuit board to the radiator through screws.

8. A Mosfet power device according to claim 3, characterized in that: The two ends of the flat plate base and the position opposite to the notch are evenly provided with third fixing holes, and the circuit board is correspondingly provided with fourth fixing holes, the fourth fixing holes are coaxial with the corresponding third fixing holes, and the third fixing holes and the fourth fixing holes are used to fix the first output element and the circuit board to the radiator through screws.

9. A Mosfet power device according to claim 1, characterized in that: The first output element and the second output element are both made of copper with nickel plated surfaces.

10. A rectifier, characterized in that: It comprises a positive radiator and a negative radiator, wherein a synchronization module is arranged on the positive radiator or the negative radiator, and the synchronization module is a MOSFET power device according to any one of claims 1 to 9.

Images