Magnetron co-sputtering equipment
By using targets and target baffles with adjustable directions in magnetron co-sputtering equipment, the cross-contamination problem caused by the lack of target baffles in traditional targets is solved, and better sputtering film formation effect and process selection are achieved.
Patent Information
- Application Number
- CN202421837085.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-31
- Publication Date
- 2025-06-24
- Estimated Expiration
- 2034-07-31
AI Technical Summary
Traditional targets lack target baffles in magnetron sputtering equipment, resulting in cross-contamination and affecting the sputtering film formation effect.
A magnetron co-sputtering device is designed, using targets with adjustable orientations and a target baffle is provided on each target, through which the target baffle is covered to avoid cross contamination.
It effectively avoids cross-contamination between the working target and the non-working target, improves and ensures the sputtering film formation effect, and provides more process choices and improves the interchangeability of the target.
Smart Images
Figure CN223016948U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of magnetron sputtering, and particularly to a magnetron co-sputtering device. Background Art
[0002] A target is a target material bombarded by high-speed energetic particles. By replacing different targets such as aluminum, copper, stainless steel, titanium, nickel, etc., different film systems such as super-hard, wear-resistant, and anti-corrosive alloy films can be obtained. Targets can be classified into semiconductor chip targets, flat panel display targets, solar cell targets, information storage targets, modification targets, electronic device targets, etc. according to different application fields.
[0003] The target is arranged on a target, and the target usually adopts a magnetron cathode. However, the traditional target is not provided with a target baffle, which is prone to cross-contamination and thus affects the sputtering film formation effect. Summary of the Utility Model
[0004] Based on this, it is necessary to provide a magnetron co-sputtering device.
[0005] In one embodiment, a magnetron co-sputtering device includes a substrate table, a main body structure, a target, and a target mounting flange;
[0006] The main body structure is provided with a vacuum chamber, and the substrate table is arranged in the vacuum chamber;
[0007] The target is adjustably arranged in the vacuum chamber to adjust the relative direction angle with the substrate table, and the target passes through the main body structure through the target mounting flange for connecting an external power supply;
[0008] Wherein, the number of the targets is at least two, and a target baffle is arranged on each of the targets of the magnetron co-sputtering device.
[0009] The above magnetron co-sputtering device can achieve co-sputtering by using a target with an adjustable direction in cooperation with a target baffle. On the one hand, the non-working target can be covered with the target baffle, thus effectively avoiding cross-contamination between the working target and the non-working target, and further improving and even ensuring the sputtering film formation effect; on the other hand, the direction of the target relative to the substrate table can be adjusted, so it is suitable for the magnetron co-sputtering process and provides more process options for sputtering film formation; on the third hand, the overall structure design is beneficial to reducing the difficulty of cavity processing and welding angles, and increasing the interchangeability of the targets.
[0010] In one of the embodiments, the magnetron co-sputtering device further includes a substrate table driving structure and a substrate table mounting flange;
[0011] The substrate table driving structure is arranged on the main body structure;
[0012] The substrate table passes through the main body structure via the substrate table mounting flange to connect to the substrate table drive structure;
[0013] The substrate table drive structure is used to drive the movement of the substrate table.
[0014] In one embodiment, the substrate table drive structure includes a Z-direction substrate table drive structure, an XY-direction substrate table drive structure, and a drive structure seal;
[0015] The XY-direction substrate table drive structure is disposed on the Z-direction substrate table drive structure, passes through the substrate table mounting flange, and is drivingly connected to the substrate table, and is used to drive the substrate table to move in a first direction or a second direction;
[0016] The Z-direction substrate table drive structure is disposed on the main body structure and is used to drive the XY-direction substrate table drive structure to move in a third direction;
[0017] The drive structure seal is used to seal the XY-direction substrate table drive structure and the substrate table mounting flange to maintain the vacuum environment of the vacuum chamber.
[0018] In one embodiment, the magnetron co-sputtering device further has a target baffle drive structure on the target, and the target baffle drive structure is connected to the target baffle to adjust the position of the target baffle on the target.
[0019] In one embodiment, the targets are centrally symmetrically distributed, and an additional target or ion source is also provided at the center of symmetry.
[0020] In one embodiment, the magnetron co-sputtering device further has a target drive structure, and the target drive structure is connected to the target to adjust the relative direction angle between the target and the substrate table; or,
[0021] The magnetron co-sputtering device further has a connecting member and a target seal corresponding to the target. The target is disposed on the connecting member, and the target seal is used to seal the connecting member and the target mounting flange to maintain the vacuum environment of the vacuum chamber; the target drive structure is connected to the connecting member, and the relative direction angle between the target and the substrate table is adjusted by adjusting the connecting member.
[0022] In one embodiment, the magnets of two adjacent targets are arranged with opposite external polarities attracting each other.
[0023] In one embodiment, at least some of the targets are regularly arranged, and among the regularly arranged targets, the magnets of two adjacent targets are arranged with opposite external polarities attracting each other.
[0024] In one embodiment, at least two of the targets are respectively connected to the same power supply through the target mounting flanges; or each of the targets is respectively connected to a plurality of independent power supplies through the target mounting flanges in a one-to-one correspondence.
[0025] In one embodiment, the target baffle is a pneumatic compact dome sputtering source baffle; or,
[0026] The magnetron co-sputtering device is further provided with a connecting member and a target seal corresponding to the target. The target is disposed on the connecting member, and the target seal is used to seal the connecting member and the target mounting flange to maintain the vacuum environment of the vacuum chamber.
[0027] In one embodiment, the magnetron co-sputtering device further includes a substrate baffle and a substrate baffle driving structure;
[0028] The substrate baffle is disposed in the vacuum chamber and is located between the substrate table and the target;
[0029] The substrate baffle driving structure is disposed on or inside the main body structure and is used to drive the substrate baffle to move. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0031] Figure 1 It is a schematic structural diagram of an embodiment of the magnetron co-sputtering device described in the present application.
[0032] Figure 2 For Figure 1 Another schematic diagram of a partial structure of the illustrated embodiment in another direction.
[0033] Figure 3 For Figure 2 Another schematic diagram of a partial structure of the illustrated embodiment in another direction.
[0034] Figure 4 For Figure 1 A schematic diagram of a state of the illustrated embodiment.
[0035] Figure 5 For Figure 4 Another schematic diagram of a state of the illustrated embodiment.
[0036] Figure 6 For Figure 5Another schematic diagram of the structure of a part of the illustrated embodiment.
[0037] Figure 7 For Figure 5 Schematic diagram of a target of the illustrated embodiment and the distribution of the magnet polarities.
[0038] Figure 8 For Figure 5 Schematic diagram of another target of the illustrated embodiment and the distribution of the magnet polarities.
[0039] Figure 9 Schematic diagram of the structure of another embodiment of the magnetron co-sputtering device described in the present application.
[0040] Figure 10 For Figure 6 Another schematic diagram of the identification of the illustrated embodiment.
[0041] Reference numerals:
[0042] Substrate table 100, substrate table drive structure 200, substrate table mounting flange 300, substrate baffle 400, substrate baffle drive structure 500, main body structure 600, target 700, target mounting flange 800, magnetron co-sputtering device 900;
[0043] Z-direction substrate table drive structure 210, XY-direction substrate table drive structure 220, drive structure seal 230, vacuum chamber 610, target baffle 710, target baffle drive structure 720, connecting member 730, target seal 740, target drive structure 750, first target 701, second target 702, third target 703, fourth target 704, fifth target 705, sixth target 706, seventh target 707. Detailed implementation manners
[0044] To make the above objects, features, and advantages of the present application more apparent and understandable, the following will describe in detail the specific implementation manners of the present application with reference to the accompanying drawings. Many specific details are set forth in the following description in order to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.
[0045] It should be noted that when a component is referred to as being "fixed to" or "disposed on" another component, it can be directly on the other component or there may also be an intermediate component. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be an intermediate component at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in the specification of the present application are only for the purpose of illustration and do not represent the only implementation manner.
[0046] In addition, the terms "first" and "second" are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the description of this application, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically defined.
[0047] In this application, unless otherwise clearly specified and defined, the first feature may be in direct contact with the second feature or in indirect contact with the second feature through an intermediate medium when the first feature is "on" or "under" the second feature. Moreover, when the first feature is "above", "over" or "on top of" the second feature, the first feature may be directly above or obliquely above the second feature, or merely indicate that the first feature has a higher horizontal height than the second feature. When the first feature is "under", "beneath" or "underneath" the second feature, the first feature may be directly below or obliquely below the second feature, or merely indicate that the first feature has a lower horizontal height than the second feature.
[0048] Unless otherwise defined, all technical and scientific terms used in the specification of this application have the same meaning as commonly understood by those skilled in the technical field to which this application belongs. The terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used in the specification of this application includes any and all combinations of one or more of the related listed items.
[0049] This application discloses a magnetron co-sputtering device, which includes some or all of the technical features of the following embodiments; that is, the magnetron co-sputtering device includes some or all of the following structures. In one embodiment of this application, a magnetron co-sputtering device includes a substrate stage, a main body structure, a target and a target mounting flange; the main body structure is provided with a vacuum chamber, and the substrate stage is arranged in the vacuum chamber; the target is adjustably arranged in the vacuum chamber to adjust the relative direction angle with the substrate stage, and the target passes through the main body structure through the target mounting flange for connecting an external power supply; wherein, the number of the targets is at least two, and a target baffle is arranged on each of the targets of the magnetron co-sputtering device. The above magnetron co-sputtering device can achieve co-sputtering by using an adjustable target in cooperation with a target baffle. On the one hand, the non-operating target can be covered with the target baffle, effectively avoiding cross-contamination between the operating target and the non-operating target, thereby improving and even ensuring the sputtering film-forming effect; on the other hand, the direction of the target relative to the substrate stage is adjustable, so it is suitable for the magnetron co-sputtering process and provides more process options for sputtering film formation; on the third hand, the overall structural design is beneficial to reducing the difficulty of cavity processing and welding angles and increasing the interchangeability of the targets. The following will be combined withFigures 1 to 10 , a detailed description of the magnetron co-sputtering device will be given.
[0050] In one embodiment, a magnetron co-sputtering device 900 is as Figure 1 and Figure 2 shown, which includes a substrate table 100, a main body structure 600, a target 700 and a target mounting flange 800; as an example, the substrate table 100 is used to carry the substrate to be processed, and the substrate can also be referred to as a substrate, a structural member or a workpiece; the target 700 is used to mount the target material, and by outputting energy-carrying particles such as positive ions to bombard the target material, atoms or atomic groups on the surface of the target material can escape onto the substrate of the substrate table 100; the main body structure 600 is used to provide a working environment. The mounting method of the target mounting flange 800 and the target 700, in cooperation with the mounting method of the substrate table driving structure 200 to be described below, is beneficial to reducing the difficulty of cavity processing and welding angles, and increasing the interchangeability of the target 700, thereby greatly improving the applicability of the magnetron co-sputtering device 900; and such a structural design reduces the difficulty of cavity processing and welding angles.
[0051] In each embodiment, the main body structure 600 is provided with a vacuum chamber 610, and the substrate table 100 is disposed in the vacuum chamber 610; the vacuum chamber 610 is used to provide a vacuum environment. It can be understood that the vacuum environment and its vacuum described in each embodiment herein are a relative vacuum concept rather than an absolute vacuum concept, and only need to meet the process requirements of sputtering film formation.
[0052] To facilitate ensuring the accuracy of the sputtering direction, in combination with Figure 3In each embodiment, the target 700 is adjustably disposed in the vacuum chamber 610 to adjust the relative direction angle with the substrate stage 100. In one embodiment, the magnetron co-sputtering device 900 is further provided with a target driving structure 750, and the target driving structure 750 is connected to the target 700 to adjust the relative direction angle between the target 700 and the substrate stage 100. Specifically, in one embodiment, the magnetron co-sputtering device 900 includes a substrate stage 100, a main structure 600, a target 700, a target driving structure 750 and a target mounting flange 800; the main structure 600 is provided with a vacuum chamber 610, and the substrate stage 100 is arranged in the vacuum chamber 610; the target 700 is adjustably arranged in the vacuum chamber 610 to adjust the relative direction angle with the substrate stage 100, and the target 700 passes through the main structure 600 through the target mounting flange 800 for connecting to an external power supply; wherein the target driving structure 750 is connected to the target 700 to adjust the relative direction angle between the target 700 and the substrate stage 100; and the number of the targets 700 is at least two, and the magnetron co-sputtering device 900 is provided with a target baffle 710 on each of the targets 700. The rest of the embodiments are similar and will not be described in detail. With such a structural design, the magnetron co-sputtering device 900 can achieve co-sputtering by adopting a target 700 with adjustable direction in cooperation with a target baffle 710. On the one hand, the inoperative target 700 can be covered with the target baffle 710, thereby effectively avoiding cross contamination between the operating target 700 and the inoperative target 700, thereby improving or even ensuring the sputtering film forming effect; on the other hand, the direction of the target 700 relative to the substrate stage 100 is adjustable, and thus it is suitable for the magnetron co-sputtering process, providing more process options for sputtering film forming; on the other hand, the overall structural design is conducive to reducing the difficulty of cavity processing and welding angles, and increases the interchangeability of targets.
[0053] For example, Figure 3 In the illustrated embodiment, the targets 700 in the outer ring are arranged obliquely, and the target 700 in the center is arranged perpendicular to the horizontal plane; Figure 4 and Figure 5 In the illustrated embodiment, all targets 700 are arranged perpendicular to the horizontal plane; Figure 6In the illustrated embodiment, some of the targets 700 are inclined, and the remaining targets 700 are all perpendicular to the horizontal plane. Such a structural design further facilitates the adjustment of the direction of the target 700 relative to the substrate table 100. Therefore, it is suitable for the magnetron co-sputtering process and provides more process options for film deposition by sputtering. In practical applications, through the target driving structure 750, the included angle between the target heads can be adjusted according to the process, with a range of 0° to 90°; each target head can be accurately adjusted electrically to an included angle of 0° to 45° with the substrate. In cooperation with the substrate table driving structure 200, the substrate on the substrate table 100 can also be adjusted in terms of the distance and included angle with the target in three directions, such as the positive and negative directions of the XYZ axes.
[0054] In each embodiment, the number of the targets 700 is at least two. In one embodiment, as Figure 3 shown, the targets 700 are centrosymmetrically distributed, and an additional target 700 or ion source is also provided at the center of symmetry. That is, for the targets 700 with a number exceeding two, one target 700 can be set as the center of symmetry, and the other targets 700 are centrosymmetrically distributed; or all the targets 700 are centrosymmetrically distributed, and the middle can be empty or an ion source can be provided. In this way, by replacing the middle target 700 with an ion source, auxiliary deposition or cleaning can be achieved, thereby greatly improving the bonding strength between the film and the substrate. At the same time, the hardness, wear resistance, and corrosion resistance of the film itself will also be improved, and the surface energy distribution of the coated surface can be improved and the energy of the reaction gas can be modulated and increased.
[0055] In order to facilitate the disassembly and replacement of the target 700, in one embodiment, as Figure 2 and Figure 6As shown, the magnetron co-sputtering device 900 is further provided with a connector 730 and a target seal 740 corresponding to the target 700, the target 700 is arranged on the connector 730, and the target seal 740 is used to seal the connector 730 and the target mounting flange 800 to maintain the vacuum environment of the vacuum chamber 610. As an example, the magnetron co-sputtering device 900 is further provided with a target driving structure 750, and the magnetron co-sputtering device 900 is further provided with a connector 730 and a target seal 740 corresponding to the target 700, the target 700 is arranged on the connector 730, and the target seal 740 is used to seal the connector 730 and the target mounting flange 800 to maintain the vacuum environment of the vacuum chamber 610; the target driving structure 750 is connected to the connector 730, and the relative direction angle between the target 700 and the substrate stage 100 is adjusted by adjusting the connector 730. The rest of the embodiments are similar and will not be described in detail. In the previous embodiment, the target drive structure 750 directly drives the target 700; in contrast, in this embodiment, the target drive structure 750 directly drives the connector 730, and drives the target 700 through the connector 730 to adjust the relative direction angle. As an example, the target seal 740 is a bellows sealing tube or a bellows sealing assembly. In this way, the structural design of the connector 730 and the target seal 740 is adopted, and it is easy to disassemble and assemble the target 700 through the connector 730, so as to achieve the replacement of the target head or target material.
[0056] In each embodiment, the target 700 passes through the main structure 600 through the target mounting flange 800 to connect to an external power source; in one embodiment, at least two targets 700 are connected to the same power source through the target mounting flange 800; or each target 700 is connected to multiple independent power sources one by one through the target mounting flange 800. With such a design, the target 700 is suitable for DC and RF power sources, each target 700 can be equipped with an independent power source, or multiple targets 700 can share a power source, and switching between power sources can be realized.
[0057] In each embodiment, the number of the targets 700 is at least two, and at least one of the targets 700 is provided with a target baffle 710. Figure 3 As shown, a target baffle 710 is provided on the target 700 at the center. In one embodiment, the target baffle 710 is a pneumatic compact dome sputtering source baffle. With such a structural design, the magnetron co-sputtering device 900 can achieve co-sputtering by using a target 700 with adjustable direction and the target baffle 710, and the target 700 can be protected by the target baffle 710.
[0058] As an example, a target baffle 710 is provided on each target 700 of the magnetron co-sputtering device 900, that is, the number of the target baffles 710 is the same as the number of the targets 700, and each target baffle 710 corresponds to each target 700 one by one. Each target baffle 710 is used to cover a corresponding target 700. In one embodiment, as Figure 4 shown, a target baffle 710 is provided on each target 700, which is in a closed state and completely covers the target 700; the state where the target baffle 710 is completely open is as Figure 5 shown. In actual use, when the target baffle 710 is in an open state, it can be partially opened or completely opened; the target baffles 710 of all the targets 700 can be opened, or the target baffles 710 of some targets 700 can be opened while the target baffles 710 of some other targets 700 are closed; that is, the target baffles 710 of some targets 700 are in an open state while the target baffles 710 of some other targets 700 are in a closed state. Such a structural design can cover the non-working targets 700 with the target baffles 710, thereby effectively avoiding cross-contamination between the working targets 700 and the non-working targets 700, and further improving and even ensuring the sputtering film-forming effect. As an example, during operation, one, two or more than two targets 700 can work, and the sputtered target materials can be metals, oxides or magnetic materials, enabling co-sputtering. The non-working targets can be covered with baffles to avoid cross-contamination, so that the growth of thin films of multi-layer compound materials can be achieved without opening the chamber or moving the coating sample.
[0059] In this embodiment, the targets 700 in the magnetron co-sputtering device 900 have multiple states and can be flexibly adjusted in an environment without breaking the vacuum to adapt to the production requirements of specific products; as Figure 4 shown, all the targets 700 are vertically installed and the target baffles 710 are closed; or as Figure 5 shown, all the targets 700 are vertically installed and the target baffles 710 are open; or as Figure 6 shown, some targets 700 are vertically installed, some targets 700 are installed at a deflected angle, the target baffles 710 of some targets 700 are open, and the target baffles 710 of some other targets 700 are closed. Such a magnetron co-sputtering device 900 has an angle adjustment function for the targets 700, and can adjust the relative direction angle between the targets 700 and the substrate table 100 without breaking the vacuum. As an example, the sputtering angle between the target head and the substrate can be automatically adjusted through a real-time program; a pneumatic compact dome sputtering source baffle can be used as the target baffle 710 to effectively eliminate cross-contamination between the targets 700, and since the targets 700 are easy to disassemble and assemble, the target materials can be installed conveniently and quickly; the targets 700 do not affect each other and are interchangeable; a bellows seal can also be used to maintain the vacuum degree of the vacuum chamber 610.
[0060] In order to facilitate adjustment of the position of the target baffle 710, in one embodiment, as Figure 6 As shown, the magnetron co-sputtering device 900 is further provided with a target baffle driving structure 720 on the target 700, and the target baffle driving structure 720 is connected to the target baffle 710 to adjust the position of the target baffle 710 on the target 700. Exemplarily, the target baffle driving structure 720 also passes through the main structure 600 through the target mounting flange 800, and is used to connect an external control device; or the target baffle driving structure 720 is wirelessly connected to the external control device, and is used to open or close the target baffle 710 under the control of the external control device. Exemplarily, the target baffle 710 is opened in the power-on state, that is, the circuit is turned on; or the target baffle 710 is closed in the power-off state, that is, the circuit is cut off. The rest of the embodiments are similar and will not be described in detail.
[0061] In one embodiment, the magnets of each target 700 are arranged as follows: Figure 7 As shown, the internal polarity of the magnets is S pole, and the external polarity is N pole. In one embodiment, the magnets of two adjacent targets 700 are arranged with external polarities attracting each other. With this design, the magnets are installed in reverse, which can increase the magnetic field, effectively improve the utilization rate of the target material and expand the etching range, and can be applied regardless of the strength of the magnets. In one embodiment, at least part of the targets 700 are regularly arranged, and in each of the regularly arranged targets 700, the magnets of two adjacent targets 700 are arranged with external polarities attracting each other. As an example, the magnets of each target 700 are arranged as follows Figure 8 As shown, six of the targets 700 are regularly arranged in a regular hexagon, which can also be understood as six of the targets 700 being regularly arranged in a ring. For the six targets 700 that are regularly arranged, the magnets of two adjacent targets 700 are arranged with external polarities that attract each other; that is, the internal polarity of the magnet of one target 700 is an S pole and the external polarity is an N pole, and the internal polarity of the magnet of the adjacent target 700 is an N pole and the external polarity is an S pole; and vice versa. Such a design is conducive to obtaining a relatively more uniform magnetic field, which can improve the utilization rate of the target, thereby expanding the sputtering range and increasing the sputtering rate; it can be understood that the magnetic field distribution and specific working mode of each target are different, and the sputtering rate is related to the power; if the rate is compared from the same power, relative to Figure 7 The embodiment shown, Figure 8 The illustrated embodiment can increase the sputtering rate by approximately 10% to 15%.
[0062] In one embodiment, if Figure 1As shown, the magnetron co-sputtering device 900 further includes a substrate table driving structure 200 and a substrate table mounting flange 300; the substrate table driving structure 200 is disposed on the main body structure 600; the substrate table 100 passes through the main body structure 600 through the substrate table mounting flange 300 to connect to the substrate table driving structure 200; the substrate table driving structure 200 is used to drive the substrate table 100 to move. Specifically, in one embodiment, as Figure 9 shown, the substrate table driving structure 200 includes a Z-direction substrate table driving structure 210, an XY-direction substrate table driving structure 220, and a driving structure seal 230; the XY-direction substrate table driving structure 220 is disposed on the Z-direction substrate table driving structure 210, and passes through the substrate table mounting flange 300 to be drivingly connected to the substrate table 100, and is used to drive the substrate table 100 to move in a first direction or a second direction; the Z-direction substrate table driving structure 210 is disposed on the main body structure 600, and is used to drive the XY-direction substrate table driving structure 220 to move in a third direction; the driving structure seal 230 is used to seal the XY-direction substrate table driving structure 220 and the substrate table mounting flange 300 to maintain the vacuum environment of the vacuum chamber 610. Exemplarily, the driving structure seal 230 is a corrugated seal tube or a bellows seal structure assembly. Such a structural design is beneficial to quickly and accurately adjust the position of the substrate to be processed on the substrate table 100 in three directions, and during the direction and position adjustment, the vacuum chamber 610 is not broken, thereby avoiding the process of repeatedly pumping vacuum, saving energy consumption and improving production efficiency at the same time. The three directions are, for example, the XYZ axis directions, and each direction can be further divided into the front-back direction, that is, the positive and negative directions. In this way, the substrate table 100 can have six-direction adjustment functions, can effectively adjust the target-substrate distance and the coating position, and is equipped with a target baffle 710 to prevent the substrate from being contaminated; the connection between the substrate table 100 and its substrate table driving structure 200 can also use a bellows seal to ensure the sealing performance, thereby ensuring the vacuum degree of the vacuum chamber 610.
[0063] In one embodiment, as Figure 9As shown, the magnetron co-sputtering device 900 further includes a substrate baffle 400 and a substrate baffle driving structure 500; the substrate baffle 400 is disposed in the vacuum chamber 610 and is located between the substrate table 100 and the target 700; the substrate baffle driving structure 500 is disposed on the main body structure 600 or within the main body structure 600 and is used to drive the substrate baffle 400 to move. As an example, the substrate baffle driving structure 500 can adopt driving methods such as electric, pneumatic, and manual to drive the substrate baffle 400 to move. As an example, the substrate baffle driving structure 500 is coupled and sealed with the main body structure 600 or sealed through a bellows sealing assembly to ensure the vacuum property of the vacuum chamber 610. Such a structural design is beneficial to adjusting the position of the substrate baffle 400.
[0064] In one embodiment, as Figure 9 and Figure 10 shown, the number of the targets 700 is seven, and 6 of the targets 700 are regularly arranged in a regular hexagon. Specifically, the seven targets 700 are respectively a first target 701, a second target 702, a third target 703, a fourth target 704, a fifth target 705, a sixth target 706, and a seventh target 707. Among them, the first target 701, the second target 702, the third target 703, the fourth target 704, the fifth target 705, and the sixth target 706 are regularly arranged in a regular hexagon, and the seventh target 707 is located at the symmetric center of the regular hexagon. As an example, as Figure 10 shown, the first target 701 is a vertically installed target, that is, perpendicular to the horizontal plane, and the target baffle 710 is closed; the second target 702 is an inclined target, and the target baffle 710 is closed; the third target 703 is a vertically installed target, and the target baffle 710 is closed; the fourth target 704 is an inclined target, and the target baffle 710 is closed; the fifth target 705 is an inclined target, and the target baffle 710 is open; the sixth target 706 is a vertically installed target, and the target baffle 710 is closed; the seventh target 707 is a vertically installed target, and the target baffle 710 is closed. The seventh target 707 can also be not installed, and an ion source can be installed vertically instead.
[0065] It can be understood that Figure 10 shown is only one application state. In other application states, the target 700 can be installed vertically or at an inclined angle, and the target baffle 710 can be normally opened and closed; the magnetic field of the target 700 can be standard or strong magnetic; as an example, the size of the target material of the target 700 is 2 inches or 3 inches, and they can be cross-installed with random positions.
[0066] It should be noted that other embodiments of the present application further include a magnetron co-sputtering device formed by combining the technical features in the above embodiments and capable of being implemented.
[0067] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.
[0068] The above-described embodiments merely represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the patent protection scope of the present application shall be subject to the appended claims.
Claims
1. A magnetron co-sputtering device (900), characterized in that: It comprises a substrate stage (100), a main structure (600), a target (700) and a target mounting flange (800); The main structure (600) is provided with a vacuum chamber (610), and the substrate stage (100) is arranged in the vacuum chamber (610); The target (700) is adjustably arranged in the vacuum chamber (610) to adjust the relative direction angle with the substrate stage (100), and the target (700) passes through the main structure (600) via the target mounting flange (800) for connecting to an external power source; There are at least two targets (700), and the magnetron co-sputtering device (900) is provided with a target baffle (710) on each target (700).
2. The magnetron co-sputtering device (900) according to claim 1, characterized in that: The magnetron co-sputtering device (900) further comprises a substrate stage driving structure (200) and a substrate stage mounting flange (300); The substrate stage driving structure (200) is arranged on the main structure (600); The substrate stage (100) passes through the main structure (600) via the substrate stage mounting flange (300) to be connected to the substrate stage driving structure (200); The substrate stage driving structure (200) is used to drive the substrate stage (100) to move.
3. The magnetron co-sputtering device (900) according to claim 2, characterized in that: The substrate stage driving structure (200) comprises a Z-direction substrate stage driving structure (210), an XY-direction substrate stage driving structure (220), and a driving structure sealing member (230); The XY-direction substrate stage driving structure (220) is arranged on the Z-direction substrate stage driving structure (210), and is drivingly connected to the substrate stage (100) through the substrate stage mounting flange (300), and is used to drive the substrate stage (100) to move along the first direction or the second direction; The Z-direction substrate stage driving structure (210) is arranged on the main structure (600) and is used to drive the XY-direction substrate stage driving structure (220) to move along a third direction; The drive structure seal (230) is used to seal the XY direction substrate stage drive structure (220) and the substrate stage mounting flange (300) to maintain the vacuum environment of the vacuum chamber (610).
4. The magnetron co-sputtering device (900) according to claim 1, characterized in that: The magnetron co-sputtering device (900) is further provided with a target baffle driving structure (720) on the target (700), and the target baffle driving structure (720) is connected to the target baffle (710) to adjust the position of the target baffle (710) on the target (700).
5. The magnetron co-sputtering device (900) according to claim 1, characterized in that: Each of the targets (700) is distributed symmetrically with respect to the center, and an additional target (700) or ion source is also provided at the symmetry center.
6. The magnetron co-sputtering device (900) according to claim 1, characterized in that: The magnetron co-sputtering device (900) is further provided with a target driving structure (750); The target driving structure (750) is connected to the target (700) to adjust the relative direction angle between the target (700) and the substrate stage (100); or, The magnetron co-sputtering device (900) is further provided with a connecting piece (730) and a target sealing piece (740) corresponding to the target (700); the target (700) is arranged on the connecting piece (730); the target sealing piece (740) is used to seal the connecting piece (730) and the target mounting flange (800) to maintain the vacuum environment of the vacuum chamber (610); the target driving structure (750) is connected to the connecting piece (730); and the relative direction angle between the target (700) and the substrate stage (100) is adjusted by adjusting the connecting piece (730).
7. The magnetron co-sputtering device (900) according to claim 1, characterized in that: The magnets of two adjacent targets (700) are arranged so that their external polarities attract each other.
8. The magnetron co-sputtering device (900) according to claim 1, characterized in that: At least part of the targets (700) are arranged regularly, and in each of the regularly arranged targets (700), magnets of two adjacent targets (700) are arranged with external polarities attracting each other.
9. The magnetron co-sputtering device (900) according to claim 1, characterized in that: At least two of the targets (700) are connected to the same power source through the target mounting flange (800); or each of the targets (700) is connected to a plurality of independent power sources in a one-to-one correspondence through the target mounting flange (800); or, The target baffle (710) is a pneumatic compact dome sputtering source baffle; or, The magnetron co-sputtering device (900) is further provided with a connecting piece (730) and a target sealing piece (740) corresponding to the target (700); the target (700) is arranged on the connecting piece (730); and the target sealing piece (740) is used to seal the connecting piece (730) and the target mounting flange (800) to maintain the vacuum environment of the vacuum chamber (610).
10. The magnetron co-sputtering device (900) according to any one of claims 1 to 9, characterized in that: The magnetron co-sputtering device (900) further comprises a substrate baffle (400) and a substrate baffle driving structure (500); The substrate baffle (400) is arranged in the vacuum chamber (610) and is located between the substrate stage (100) and the target (700); The substrate baffle driving structure (500) is arranged on the main structure (600) or in the main structure (600) and is used to drive the substrate baffle (400) to move.