Preparation device for high-purity boron
By designing a high-purity boron preparation device including moving electrodes and elastic parts, the boron crystal defects caused by bending and shaking of the heating wire are solved, and the effect of improving product quality is achieved.
Patent Information
- Application Number
- CN202422000683.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-19
- Publication Date
- 2025-06-27
- Estimated Expiration
- 2034-08-19
AI Technical Summary
In the existing high-purity boron preparation device, the heating wire will expand and bend after heating, and will shake due to the magnetic field, resulting in defects such as faults and uneven thickness during the deposition of boron crystals, affecting product quality.
A preparation device including a reactor, a fixed electrode, a moving electrode, an elastic member and a heating wire is designed. The moving electrode can be moved along the length of the reactor, and the elastic member provides the force to keep the moving electrode away from the fixed electrode, ensuring that the heating wire remains straight after expansion due to heat, avoiding bending and shaking.
By keeping the heating wire straight, the boron crystals are avoided to break or fall off during the deposition process, the defects of faults and uneven thickness are reduced, and the quality of high-purity boron products is improved.
Smart Images
Figure CN223027311U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the technical field of high-purity material preparation, and specifically relates to a preparation device for high-purity boron. Background Art
[0002] As an important high-tech and electronic information material, high-purity boron has a wide range of applications in multiple fields, including anti-ballistic ceramics, fuel-rich propellants, superconducting materials, amorphous alloy materials, aerospace alloy materials, electronic materials, chemical corrosion prevention materials, ceramics, nuclear leakage prevention materials, etc. Especially in the dopants of single-crystalline silicon and germanium, the purity requirement of high-purity boron powder is extremely high, usually reaching more than 99.9999%.
[0003] High-purity boron can be prepared by reducing boron halide with hydrogen, that is, heating hydrogen and boron halide with a heating wire. The boron halide undergoes a reduction reaction, and high-purity boron will deposit on the heating wire. However, in the existing preparation device, after the heating wire is heated, it will expand and become bent, and the heating wire under the energized state will shake under the action of its own magnetic field. The bending and shaking of the heating wire will cause the high-purity boron crystals deposited on the heating wire in the early stage to break or fall off. During the continuous deposition process, the high-purity boron crystals adhere to the cracks or the fallen-off parts, resulting in subsequent boron crystals being prone to defects such as faults and uneven thickness, affecting the product quality. Utility Model Content
[0004] The technical problem to be solved by this application is that currently, when preparing boron crystals by reducing boron halide with hydrogen, the boron crystals are prone to defects such as faults and uneven thickness. To solve the above technical problem, a preparation device for high-purity boron is provided, which can avoid defects such as faults and uneven thickness of boron crystals and improve the product quality.
[0005] The technical solution proposed by this application is as follows:
[0006] A preparation device for high-purity boron, comprising:
[0007] A reaction furnace having a heating chamber;
[0008] A fixed electrode connected to one end of the reaction furnace, and one end of the fixed electrode extends into the heating chamber;
[0009] A movable electrode connected to the end of the reaction furnace far from the fixed electrode, and can reciprocate along the length direction of the reaction furnace. One end of the movable electrode extends into the heating chamber;
[0010] An elastic member disposed between the reaction furnace and the movable electrode for providing a force to move the movable electrode away from the fixed electrode;
[0011] The heating wire is disposed in the heating cavity, and two ends of the heating wire are respectively connected to the fixed electrode and the movable electrode.
[0012] Further, the reaction furnace is further provided with a first channel and a second channel communicating with the heating cavity.
[0013] Further, the first channel and the second channel are located at the side part of the reaction furnace.
[0014] Further, a first connection port is formed at one end of the reaction furnace, and the fixed electrode is hermetically connected to the first connection port.
[0015] Further, the preparation device further includes a first insulating seal, the first insulating seal is disposed at the first connection port, the fixed electrode passes through the first insulating seal and is in sealed contact with the first insulating seal.
[0016] Further, a second connection port is formed at one end of the reaction furnace away from the fixed electrode, the movable electrode is hermetically connected to the second connection port and can reciprocate along the length direction of the reaction furnace.
[0017] Further, the preparation device further includes a second insulating seal, the second insulating seal is disposed at the second connection port, the movable electrode passes through the second insulating seal in a reciprocating manner along the length direction of the reaction furnace, and the movable electrode is in sealed contact with the second insulating seal.
[0018] Further, the elastic member is one of a spring, a cylinder and an electric cylinder.
[0019] Further, the elastic member is disposed outside the reaction furnace.
[0020] Further, a limiting protrusion is provided on a part of the movable electrode located outside the reaction furnace, one end of the elastic member abuts against the outside of the reaction furnace, and the other end abuts against the limiting protrusion.
[0021] With the above preparation device, the heating wire heats the heating cavity, hydrogen and boron halide are introduced into the heating cavity, and high-purity boron is deposited on the heating wire. Since the movable electrode can move and the elastic member can provide a force to move the movable electrode away from the fixed electrode, after the heating wire expands due to heat, the elastic member can drive the movable electrode away from the fixed electrode, so that the heating wire remains straight, avoiding bending and shaking of the heating wire, thereby avoiding breakage or falling off of the high-purity boron crystals deposited on the heating wire, and avoiding defects such as faults and uneven thickness of the high-purity boron crystals, and improving the product quality. Description of the Drawings
[0022] The accompanying drawings are used to provide a further understanding of the present application, and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application, and do not constitute a limitation to the present application.
[0023] Figure 1 It is a schematic structural diagram of a preparation device provided for an embodiment of the present application;
[0024] Figure 2 is Figure 1 a schematic cross-sectional structural diagram of the shown preparation device.
[0025] Label description:
[0026] 100, preparation device; 110, reaction furnace; 111, heating chamber; 112, first channel; 113, second channel; 114, furnace body; 115, cover body; 120, fixed electrode; 121, clamping protrusion; 130, moving electrode; 131, limiting protrusion; 140, heating wire; 150, elastic member; 160, first insulating seal; 170, second insulating seal; 180, clamping structure. Detailed implementation manners
[0027] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.
[0028] In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application.
[0029] The present application provides a preparation device for high-purity boron. The preparation device can prepare high-purity boron crystals, and can avoid defects such as faults and uneven thickness in the boron crystals during the preparation process, thereby improving the product quality.
[0030] As Figure 1 and Figure 2 shown, the preparation device 100 includes a reaction furnace 110, a fixed electrode 120, a moving electrode 130, a heating wire 140 and an elastic member 150.
[0031] The reaction furnace 110 has a heating chamber 111. The fixed electrode 120 and the movable electrode 130 are respectively connected to opposite ends of the reaction furnace 110, and one end of the fixed electrode 120 and one end of the movable electrode 130 extend into the heating chamber 111; wherein, the movable electrode 130 can reciprocate along the length direction of the reaction furnace 110, that is, it can approach and move away from the fixed electrode 120. The heating wire 140 is arranged in the heating chamber 111, and both ends of the heating wire 140 are respectively connected to the fixed electrode 120 and the movable electrode 130, that is, connected to the ends of the fixed electrode 120 and the movable electrode 130 extending into the heating chamber 111.
[0032] The elastic member 150 is arranged between the reaction furnace 110 and the movable electrode 130, and is used to provide a force for moving the movable electrode 130 away from the fixed electrode 120, so that the heating wire 140 is straightened.
[0033] With the above preparation device 100, the heating wire 140 heats the heating chamber 111, hydrogen and boron halide are introduced into the heating chamber 111, and high-purity boron is deposited on the heating wire 140. Since the movable electrode 130 can move, and the elastic member 150 can provide a force for moving the movable electrode 130 away from the fixed electrode 120, after the heating wire 140 expands due to heat, the elastic member 150 can drive the movable electrode 130 away from the fixed electrode 120, so that the heating wire 140 remains straightened, avoiding bending and shaking of the heating wire 140, thereby avoiding breakage or falling off of the high-purity boron crystals deposited on the heating wire 140, avoiding defects such as faults and uneven thickness of the high-purity boron crystals, and improving the product quality.
[0034] It should be noted that the above preparation device 100 can avoid defects such as faults and uneven thickness of boron crystals during the preparation of high-purity boron crystals, but does not limit that the above preparation device 100 can only be applied to the preparation of high-purity boron crystals. In other cases, the above preparation device 100 can also be applied to the preparation of high-purity boron powder, which is not limited here.
[0035] In one embodiment, the reaction furnace 110 is further provided with a first channel 112 and a second channel 113 communicating with the heating chamber 111. Protective gas can be introduced through the first channel 112 and the second channel 113, and the gas in the heating chamber 111 can be discharged to complete the replacement of the gas in the heating chamber 111. At the same time, hydrogen and / or boron halide can also be added into the heating chamber 111 through the first channel 112 or the second channel 113.
[0036] Furthermore, the first channel 112 and the second channel 113 are located on the side of the reaction furnace 110. In this way, when the reaction furnace 110 is placed horizontally, at least one of the first channel 112 and the second channel 113 can be arranged downward, so as to facilitate the discharge of high-purity boron.
[0037] In one embodiment, the reaction furnace 110 includes a furnace body 114 and two cover bodies 115 located at both ends of the furnace body 114. The two cover bodies 115 are detachably connected to the furnace body 114, and when connected, they enclose the heating cavity 111 with the furnace body 114. The first channel 112 and the second channel 113 are provided on the side of the furnace body 114, and the fixed electrode 120 and the movable electrode 130 are respectively provided on the two cover bodies 115. In Figure 1 and Figure 2 In the illustrated embodiment, the furnace body 114 is cylindrical, and the length direction of the reaction furnace 110 is the axial direction of the furnace body 114.
[0038] It should be noted that at least one of the fixed electrode 120 and the movable electrode 130 can be configured to be detachably connected to the cover body 115. In this way, after the crystal is prepared, the cover body 115 can be removed from the furnace body 114, and at the same time, the fixed electrode 120 or the movable electrode 130 can be removed from the cover body 115, so as to completely take out the high-purity boron crystal deposited on the heating wire 140.
[0039] Of course, when it is necessary to avoid oxidation of high-purity boron, one of the first channel 112 and the second channel 113 can be used for adding and discharging materials.
[0040] In one embodiment, a first connection port is provided at one end of the reaction furnace 110. The fixed electrode 120 is hermetically connected to the first connection port and extends into the heating cavity 111 at one end to ensure the sealing performance of the heating cavity 111. Specifically, in Figure 2 the illustrated embodiment, the first connection port is located on the cover body 115.
[0041] Furthermore, the preparation device 100 further includes a first insulating seal 160. The first insulating seal 160 is provided at the first connection port. The fixed electrode 120 passes through the first insulating seal 160 and is in sealing contact with the first insulating seal 160. Optionally, the first insulating seal 160 is a high-temperature resistant rubber ring.
[0042] In one embodiment, a second connection port is provided at one end of the reaction furnace 110 away from the fixed electrode 120. The movable electrode 130 is hermetically connected to the second connection port and can reciprocate along the length direction of the reaction furnace 110. Specifically, in Figure 2 the illustrated embodiment, the second connection port is located on the cover body 115, and the first connection port and the second connection port are respectively located on the two cover bodies 115.
[0043] Further, the preparation device 100 further includes a second insulating seal 170 disposed at the second connection port. The movable electrode 130 is reciprocally movably disposed through the second insulating seal 170 along the length direction of the reaction furnace 110, and the movable electrode 130 is in sealing contact with the second insulating seal 170. Optionally, the second insulating seal 170 is a high-temperature resistant rubber ring.
[0044] It can be understood that, as Figure 2 shown, in order to prevent the fixed electrode 120 and the movable electrode 130 from detaching from the reaction furnace 110 during use, a clamping protrusion 121 is formed on the part of the fixed electrode 120 located in the heating chamber 111, and a clamping structure 180 is provided at the part of the fixed electrode 120 located outside the reaction furnace 110. The clamping structure 180 is fixedly connected to the fixed electrode 120 and cooperates with the clamping protrusion 121 to clamp the first insulating seal 160, so that the fixed electrode 120 remains fixed relative to the reaction furnace 110; the part of the movable electrode 130 located in the heating chamber 111 is connected to the heating wire 140 and will not detach from the reaction furnace 110 under the action of the fixed electrode 120 and the heating wire 140. Among them, a connection groove may be opened on the part of the fixed electrode 120 located outside the reaction furnace 110, and the clamping structure 180 is fixedly connected to the fixed electrode 120 through the connection groove.
[0045] In one embodiment, the elastic member 150 is disposed outside the reaction furnace 110, that is, the elastic member 150 contacts the part of the movable electrode 130 located outside the reaction furnace 110. Specifically, in Figure 2 the shown embodiment, a limiting protrusion 131 is provided on the part of the movable electrode 130 located outside the reaction furnace 110. One end of the elastic member 150 abuts against the outside of the reaction furnace 110, and the other end abuts against the limiting protrusion 131 to drive the movable electrode 130 away from the fixed electrode 120.
[0046] Optionally, the elastic member 150 is one of a spring, a cylinder, and an electric cylinder. In Figure 1 and Figure 2 the shown embodiment, the elastic member 150 is a spring. The spring is sleeved on the movable electrode 130, and one end abuts against the cover body 115, and the other end abuts against the limiting protrusion 131.
[0047] In one embodiment, the heating wire 140 is a tungsten wire.
[0048] To facilitate understanding of the technical solution of the present application, the preparation process of the preparation device 100 for high-purity boron in the above embodiments will be described herein with reference to Figure 1 and Figure 2 :
[0049] The protective gas is introduced through the first channel 112 to replace the gas in the heating chamber 111. Subsequently, the fixed electrode 120 and the moving electrode 130 are energized, causing the heating wire 140 to heat up. During the heating process, the heating wire 140 expands and extends, and the moving electrode 130 moves leftward under the action of the elastic member 150, thereby straightening the extended heating wire 140 and keeping the heating wire 140 in a taut state.
[0050] After the temperature in the heating chamber 111 rises to the reaction temperature, hydrogen and boron halide are introduced through the first channel 112. The hydrogen and boron halide undergo a reduction reaction in the heating chamber 111, and high-purity boron crystals are deposited on the heating wire 140. After the reaction is completed, when the temperature drops, the heating wire 140 contracts to its original length, and at the same time, the moving electrode 130 is pulled back to the initial position.
[0051] It should be noted that after the high-purity boron crystals are completely deposited and the temperature drops, the heating wire 140 contracts. At this time, the contraction of the heating wire 140 will not cause defects such as faults and uneven thickness in the high-purity boron crystals, so the quality of the product will not be affected.
[0052] In summary, the preparation device 100 for high-purity boron provided by the present application has at least the following advantages:
[0053] The moving electrode 130 can move relative to the reaction furnace 110, and the elastic member 150 can provide a force for the moving electrode 130 to move away from the fixed electrode 120, thereby ensuring that the heating wire 140 remains taut during the preparation process, avoiding bending and shaking of the heating wire 140, thus preventing the deposited high-purity boron crystals from breaking and falling off, and avoiding defects such as faults and uneven thickness in the high-purity boron crystals, and improving the quality of the product.
[0054] Although the embodiments of the present application have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principle and spirit of the present application. The scope of the present application is defined by the appended claims and their equivalents.
Claims
1. A device for preparing high-purity boron, characterized in that: include: A reaction furnace having a heating chamber; A fixed electrode connected to one end of the reaction furnace, and one end of the fixed electrode extends into the heating chamber; A movable electrode is connected to one end of the reaction furnace away from the fixed electrode and can move back and forth along the length direction of the reaction furnace, and one end of the movable electrode extends into the heating chamber; an elastic member, disposed between the reaction furnace and the movable electrode, for providing a force to move the movable electrode away from the fixed electrode; A heating wire is arranged in the heating chamber, and two ends of the heating wire are respectively connected to the fixed electrode and the movable electrode.
2. The device for preparing high-purity boron according to claim 1, characterized in that: The reaction furnace is further provided with a first channel and a second channel communicating with the heating chamber.
3. The device for preparing high-purity boron according to claim 2, characterized in that: The first passage and the second passage are located at a side of the reaction furnace.
4. The device for preparing high-purity boron according to claim 1, characterized in that: A first connection port is provided at one end of the reaction furnace, and the fixed electrode is sealed and connected to the first connection port.
5. The device for preparing high-purity boron according to claim 4, characterized in that: The preparation device further includes a first insulating seal, which is disposed at the first connection port, and the fixed electrode is penetrated through the first insulating seal and is in sealing contact with the first insulating seal.
6. The device for preparing high-purity boron according to claim 1, characterized in that: A second connection port is provided at one end of the reaction furnace away from the fixed electrode. The movable electrode is sealed and connected to the second connection port and can reciprocate along the length direction of the reaction furnace.
7. The device for preparing high-purity boron according to claim 6, characterized in that: The preparation device also includes a second insulating seal, which is arranged at the second connection port. The movable electrode is reciprocally movable through the second insulating seal along the length direction of the reaction furnace, and the movable electrode is in sealing contact with the second insulating seal.
8. The device for preparing high-purity boron according to claim 1, characterized in that: The elastic member is one of a spring, a cylinder and an electric cylinder.
9. The device for preparing high-purity boron according to claim 1, characterized in that: The elastic member is arranged on the outer side of the reaction furnace.
10. The device for preparing high-purity boron according to claim 9, characterized in that: A portion of the movable electrode located outside the reaction furnace is provided with a limiting protrusion, one end of the elastic member abuts against the outside of the reaction furnace, and the other end abuts against the limiting protrusion.