Cracking treatment equipment for high-boiling residues generated in polycrystalline silicon production process

Abstract

The embodiment of the utility model provides cracking treatment equipment for high-boiling residues generated in a polycrystalline silicon production process, and relates to the technical field of polycrystalline silicon production. The cracking treatment equipment for the high-boiling residues generated in the polycrystalline silicon production process comprises an equipment main body, a stirring assembly and a plurality of distributors, a feeding hole is formed in the top of the equipment main body, the equipment main body is provided with a reaction cavity, and a mullite layer is arranged on the inner wall of the reaction cavity; and the stirring assembly and the plurality of distributors are partially positioned in the reaction cavity. The mullite layer is arranged on the inner wall of the reaction cavity of the equipment main body, the mullite layer is resistant to high temperature and low in heat conductivity, the mullite layer can play a role in heat insulation, and in the cracking process, the strength of the equipment main body can be prevented from being reduced, so that the service life of the equipment main body is prolonged.

Description

Technical Field

[0001] The utility model relates to the technical field of polysilicon production, in particular to a high-boiling substance cracking treatment device generated in the process of polysilicon production. Background Art

[0002] In the reduction process in the field of polysilicon production, SiHCl3 and H2 gases enter a reduction furnace in a certain proportion to undergo a reduction reaction. High-boiling substances such as Si2Cl6 are generated during the reduction process.

[0003] In the related art, Si2Cl6 is subjected to cracking treatment. The main body of the high-boiling substance cracking treatment device is made of steel. After adding Si2Cl6 and HCl into the high-boiling substance cracking treatment device for a mixing reaction, SiHCl3 and SiCl4 can be obtained.

[0004] However, during the cracking process, the main body of the high-boiling substance cracking treatment device is in a high-temperature environment, and its strength decreases, which will reduce its service life. Summary of the Utility Model

[0005] The embodiment of the utility model provides a high-boiling substance cracking treatment device generated in the process of polysilicon production to solve the problem that during the cracking process, the high-boiling substance cracking treatment device is in a high-temperature environment, its strength decreases, and its service life will be reduced.

[0006] The embodiment of the utility model provides a high-boiling substance cracking treatment device generated in the process of polysilicon production, including a device main body, a stirring assembly and a plurality of distributors;

[0007] A feed inlet is arranged at the top of the device main body. The device main body has a reaction cavity, and a mullite layer is arranged on the inner wall of the reaction cavity;

[0008] Both the stirring assembly and the plurality of distributors are partially located in the reaction cavity.

[0009] In a possible implementation manner, the mullite layer includes a plurality of mullite plates, the plurality of mullite plates are adhesively connected, and the plurality of mullite plates are in contact with the inner wall of the reaction cavity.

[0010] In a possible implementation manner, the plurality of distributors include a first distributor and a second distributor. In a first direction, the first distributor is higher than the second distributor.

[0011] In a possible implementation manner, the first distributor includes a first circular distribution pipe and two first support pipes. The first support pipes connect the first circular distribution pipe and the device main body, and one of the two first support pipes communicates with the first circular distribution pipe.

[0012] In a possible implementation, the two first support pipes are parallel to each other, and both of the two first support pipes extend along the radial direction of the first circular distribution pipe.

[0013] In a possible implementation, the second distributor includes a second circular distribution pipe and three second support pipes. The three second support pipes are respectively connected to the bottom of the reaction chamber, the three second support pipes are respectively connected to the second circular distribution pipe, the three second support pipes are arranged at intervals along the circumferential direction of the second circular distribution pipe, and one of the three second support pipes is communicated with the second circular distribution pipe.

[0014] In a possible implementation, the diameter of the first circular distribution pipe is equal to the diameter of the second circular distribution pipe.

[0015] In a possible implementation, a plurality of air outlet holes are provided on both the first circular distribution pipe and the second circular distribution pipe, and the plurality of air outlet holes face the bottom of the reaction chamber.

[0016] In a possible implementation, the stirring assembly includes a stirring shaft and a plurality of stirrers, and the plurality of stirrers are connected to the stirring shaft;

[0017] The distributor, the stirring shaft and the plurality of stirrers are all metal parts made of Hastelloy.

[0018] In a possible implementation, the plurality of stirrers include a first stirrer and a second stirrer. In the first direction, the first stirrer is higher than the first distributor, and the second stirrer is located between the first distributor and the second distributor.

[0019] The embodiment of the present utility model provides a high-boiling-point substance cracking treatment device generated in the polysilicon production process. By arranging a mullite layer on the inner wall of the reaction chamber of the device main body, the mullite layer has high temperature resistance and low thermal conductivity, and the mullite layer can play a heat insulation role. During the cracking process, the device main body can be prevented from being in a high-temperature environment, so that the strength of the device main body can be avoided from decreasing, and further the service life of the device main body can be improved.

[0020] The mullite layer can be wear-resistant and resist wear during the cracking process, thereby protecting the device main body, avoiding the decrease of the strength of the device main body, and prolonging the service life of the device main body.

[0021] The mullite layer can be corrosion-resistant, avoid the corrosion damage of the reaction material to the device main body, and prolong the service life of the device main body. Description of the Drawings

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0023] Figure 1 It is a schematic structural diagram of a high-boiling substance cracking treatment device generated in the production process of polysilicon provided by an embodiment of the present invention;

[0024] Figure 2 For Figure 1 a top view schematic diagram of the equipment main body in

[0025] Figure 3 For Figure 1 a sectional schematic diagram of the equipment main body and the first distributor at A-A in

[0026] Figure 4 For Figure 1 a sectional schematic diagram of the equipment main body and the second distributor at B-B in

[0027] Explanation of reference numerals:

[0028] 10 - Equipment main body; 101 - Feed inlet;

[0029] 102 - Reaction chamber; 11 - Mullite layer;

[0030] 20 - Stirring assembly; 21 - Motor reducer;

[0031] 22 - Magnetic seal; 23 - Coupling;

[0032] 24 - Stirring shaft; 251 - First stirrer;

[0033] 252 - Second stirrer; 31 - First distributor;

[0034] 311 - First circular distribution pipe; 312 - First support pipe;

[0035] 3121 - First air inlet; 32 - Second distributor;

[0036] 321 - Second circular distribution pipe; 322 - Second support pipe;

[0037] 3221 - Second air inlet; 40 - Jacket;

[0038] 401 - Steam inlet; 402 - Steam condensate outlet;

[0039] 50 - Discharge pipe; 60 - Base. Detailed implementation manners

[0040] To make the objectives, technical solutions and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Apparently, the described embodiments are some, but not all, of the embodiments of the present utility model. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without making creative efforts shall fall within the protection scope of the present utility model.

[0041] It should be noted that the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present utility model, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0042] In the present utility model, unless otherwise clearly defined and limited, terms such as "installed", "connected", "fixed", etc. shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection, an electrical connection, or communicable with each other; it may be directly connected, or indirectly connected through an intermediate medium, and may be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model may be understood according to specific circumstances.

[0043] In the present utility model, unless otherwise clearly defined and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below" and "beneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0044] In the above description, the descriptions referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0045] As described in the background art, during the cracking process, the main body of the high-boiling substance cracking treatment equipment is in a high-temperature environment, and its strength decreases, which will reduce its service life.

[0046] To solve the above problems, an embodiment of the present utility model provides a high-boiling substance cracking treatment equipment generated during the production process of polysilicon. By providing a mullite layer on the inner wall of the reaction chamber of the equipment main body, the mullite layer has high temperature resistance and low thermal conductivity, and the mullite layer can play a heat insulation role. During the cracking process, it can avoid the decrease in the strength of the equipment main body, thereby improving the service life of the equipment main body.

[0047] The following will specifically describe in detail the high-boiling substance cracking treatment equipment provided by the embodiment of the present utility model in conjunction with specific embodiments.

[0048] See Figure 1 As shown, an embodiment of the present utility model provides a high-boiling substance cracking treatment equipment generated during the production process of polysilicon, including an equipment main body 10, a stirring assembly 20, a plurality of distributors, and a jacket 40.

[0049] The material of the equipment main body 10 is steel. The X-axis direction is the height direction of the equipment main body 10, that is, the first direction is the height direction of the equipment main body 10.

[0050] See Figure 2 As shown, a feed inlet 101 is provided at the top of the equipment main body 10. The top of the equipment main body 10 is located on one side of the equipment main body 10 in the +X-axis direction. The bottom of the equipment main body 10 is located on one side of the equipment main body 10 in the -X-axis direction. The top and the bottom of the equipment main body 10 are oppositely arranged.

[0051] The interior of the equipment main body 10 has a reaction chamber 102. The high-boiling substance generated during the production process of polysilicon enters the reaction chamber 102 of the equipment main body 10 from the feed inlet 101. In this embodiment, the high-boiling substance can be hexachlorodisilane (Si2Cl6).

[0052] A mullite layer 11 is provided on the inner wall of the reaction chamber 102. The mullite layer 11 is resistant to high temperatures and has a low thermal conductivity. The mullite layer 11 can play a heat insulation role and can prevent the strength of the equipment main body 10 from decreasing during the cracking process, thereby increasing the service life of the equipment main body 10.

[0053] The mullite layer 11 is wear-resistant and can resist wear during the cracking process, thereby protecting the equipment main body 10, preventing the strength of the equipment main body 10 from decreasing, and extending the service life of the equipment main body 10.

[0054] The mullite layer 11 is corrosion-resistant and can prevent the reaction materials from corroding and damaging the equipment main body 10, thereby extending the service life of the equipment main body 10.

[0055] In some examples, the mullite layer 11 includes a plurality of mullite plates, and the plurality of mullite plates are adhesively connected. That is to say, the plurality of mullite plates are adhesively bonded to form the mullite layer 11. With this arrangement, through the assembly of the plurality of mullite plates, the mullite layer 11 is easy to install and maintain. It should be noted that after a certain mullite plate is damaged, only this mullite plate needs to be replaced, rather than the entire mullite layer 11, thereby reducing the maintenance cost and time.

[0056] The plurality of mullite plates are placed in the reaction chamber 102, and the plurality of mullite plates are in contact with the inner wall of the reaction chamber 102.

[0057] The stirring assembly 20 is partially located in the reaction chamber 102. The stirring assembly 20 includes a motor reducer 21, a magnetic seal 22, a coupling 23, a stirring shaft 24, and a plurality of stirrers. The magnetic seal 22 is arranged between the motor reducer 21 and the coupling 23. The stirring shaft 24 is connected to the coupling 23. The plurality of stirrers are fixedly connected to the stirring shaft 24.

[0058] The motor reducer 21 and the magnetic seal 22 are located outside the reaction chamber 102. The stirring shaft 24 and the plurality of stirrers are located in the reaction chamber 102.

[0059] Driven by the motor reducer 21, the stirring shaft 24 and the plurality of stirrers rotate, and the plurality of stirrers can stir the reaction materials in the reaction chamber 102.

[0060] In some examples, the stirrer includes a plurality of stirring blades, and the plurality of stirring blades are fixedly connected to the stirring shaft 24 by bolts.

[0061] The stirring shaft 24 and the plurality of stirrers are both metal parts made of Hastelloy. In some examples, the stirring shaft 24 and the plurality of stirrers are both metal parts made of C-276 Hastelloy. With this arrangement, the stirring shaft 24 and the plurality of stirrers have good corrosion resistance, can prevent the reaction materials from corroding and damaging the stirring shaft 24 and the plurality of stirrers, and extend the service life of the stirring assembly 20.

[0062] A plurality of stirrers are arranged at intervals along the first direction. In some examples, referring to Figure 1 as shown, the plurality of stirrers include a first stirrer 251 and a second stirrer 252. In the first direction, the first stirrer 251 is higher than the first distributor 31.

[0063] Hydrogen chloride (HCl) gas enters the reaction chamber 102 through a plurality of distributors. The distributor is a metal part made of Hastelloy. In some examples, the distributor is a metal part made of C-276 Hastelloy. With such a setting, the distributor has good corrosion resistance, avoiding the corrosion damage of the reaction materials to the distributor and extending the service life of the distributor.

[0064] The plurality of distributors include a first distributor 31 and a second distributor 32. In the first direction, the first distributor 31 is higher than the second distributor 32. With such a setting, the HCl gas can enter the reaction chamber 102 through the first distributor 31 and the second distributor 32.

[0065] In some examples, in the first direction, the first stirrer 251 is higher than the first distributor 31, and the second stirrer 252 is located between the first distributor 31 and the second distributor 32. With such a setting, the contact uniformity between the HCl gas and the high-boiling substances can be improved.

[0066] In a possible implementation manner, referring to Figure 3 as shown, the first distributor 31 includes a first circular distribution pipe 311 and two first support pipes 312. The first support pipes 312 connect the first circular distribution pipe 311 and the equipment main body 10. With such a setting, the first circular distribution pipe 311 can be supported by the two first support pipes 312.

[0067] The shape of the first circular distribution pipe 311 is circular. A plurality of air outlet holes are provided on the first circular distribution pipe 311. The HCl gas in the first circular distribution pipe 311 enters the reaction chamber 102 through the air outlet holes.

[0068] The plurality of air outlet holes on the first circular distribution pipe 311 face the bottom of the reaction chamber 102. The bottom of the reaction chamber 102 is located on one side of the reaction chamber 102 in the -X axis direction. With such a setting, the HCl gas can contact the high-boiling substances.

[0069] The extending direction of the air outlet holes on the first circular distribution pipe 311 can intersect with the first direction or be parallel to the first direction. In some examples, the plurality of air outlet holes on the first circular distribution pipe 311 all extend along the -X axis direction.

[0070] The two first support pipes 312 are respectively inserted and connected to the equipment main body 10. The two first support pipes 312 are respectively fixedly connected to the first circular distribution pipe 311 through flanges.

[0071] One of the two first support pipes 312 is in communication with the first circular distribution pipe 311. The first support pipe 312 in communication with the first circular distribution pipe 311 partially extends outside the reaction chamber 102, and this first support pipe 312 has a first air inlet 3121.

[0072] In some examples, the two first support pipes 312 are parallel to each other, and the two first support pipes 312 both extend along the radial direction of the first circular distribution pipe 311.

[0073] In a possible implementation manner, as shown in Figure 4 the second distributor 32 includes a second circular distribution pipe 321 and three second support pipes 322. The three second support pipes 322 are respectively connected to the bottom of the reaction chamber 102, and the three second support pipes 322 are respectively connected to the second circular distribution pipe 321.

[0074] The shape of the second circular distribution pipe 321 is circular. A plurality of air outlet holes are provided on the second circular distribution pipe 321. The HCL gas in the second circular distribution pipe 321 enters the reaction chamber 102 through the air outlet holes.

[0075] The plurality of air outlet holes on the second circular distribution pipe 321 face the bottom of the reaction chamber 102. The bottom of the reaction chamber 102 is located on one side in the -X axis direction of the reaction chamber 102. With such a setting, the HCL gas can contact the high-boiling substances.

[0076] The extending direction of the air outlet holes on the second circular distribution pipe 321 can intersect with the first direction or be parallel to the first direction. In some examples, the plurality of air outlet holes on the second circular distribution pipe 321 all extend along the -X axis direction.

[0077] The three second support pipes 322 are respectively inserted and connected to the equipment main body 10. The three second support pipes 322 are respectively fixedly connected to the second circular distribution pipe 321 through flanges.

[0078] In some examples, the three second support pipes 322 are all perpendicular to the bottom of the reaction chamber 102.

[0079] The three second support pipes 322 are arranged at intervals along the circumferential direction of the second circular distribution pipe 321. In some examples, the three second support pipes 322 are arranged at equal intervals along the circumferential direction of the second circular distribution pipe 321.

[0080] One of the three second support pipes 322 communicates with the second circular distribution pipe 321. The second support pipe 322 that communicates with the second circular distribution pipe 321 partially extends outside the reaction chamber 102, and this second support pipe 322 has a second air inlet 3221 (see Figure 1 as shown).

[0081] In some examples, the diameter of the first circular distribution pipe 311 is equal to the diameter of the second circular distribution pipe 321. With such a setting, the first circular distribution pipe 311 and the second circular distribution pipe 321 are convenient for processing and manufacturing.

[0082] See Figure 1 as shown, the high-boiling-point substance cracking treatment equipment in the polysilicon production process further includes a discharge pipe 50. The discharge pipe 50 is connected to the bottom of the equipment main body 10. The discharge pipe 50 communicates with the reaction chamber 102.

[0083] The liquid-phase reaction product in the reaction chamber 102 is discharged from the discharge pipe 50 to the outside of the reaction chamber 102.

[0084] The jacket 40 is wrapped around the outside of the equipment main body 10. Steam is introduced into the jacket 40 for heating the reaction chamber 102.

[0085] The jacket 40 is provided with a steam inlet 401 and a steam condensate outlet 402. The steam inlet 401 is located at the top of the jacket 40, and the steam condensate outlet 402 is located at the bottom of the jacket 40.

[0086] The top of the jacket 40 is located on one side of the equipment main body 10 in the +X axis direction. The bottom of the jacket 40 is located on one side of the equipment main body 10 in the -X axis direction. The top of the jacket 40 and the bottom of the jacket 40 are oppositely arranged.

[0087] It should be noted that the steam condensate outlet 402 is configured with an outlet pipe.

[0088] The high-boiling-point substance cracking treatment equipment in the polysilicon production process further includes a base 60. The base 60 is fixed to the bottom of the equipment main body 10. The base 60 is used to support the equipment main body 10.

[0089] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high boiling point cracking and processing device generated in the polysilicon production process, characterized in that: It comprises an equipment body (10), a stirring assembly (20) and a plurality of distributors; A feed port (101) is provided at the top of the device body (10), the device body (10) has a reaction chamber (102), and a mullite layer (11) is provided on the inner wall of the reaction chamber (102); The stirring assembly (20) and the plurality of distributors are partially located in the reaction chamber (102).

2. The high boiling point cracking and processing equipment generated in the polysilicon production process according to claim 1, characterized in that: The mullite layer (11) comprises a plurality of mullite plates, the plurality of mullite plates are bonded and connected, and the plurality of mullite plates are in contact with the inner wall of the reaction chamber (102).

3. The high boiling point cracking and processing equipment generated in the polysilicon production process according to claim 1, characterized in that: The plurality of distributors include a first distributor (31) and a second distributor (32), and in a first direction, the first distributor (31) is higher than the second distributor (32).

4. The high boiling point cracking and processing equipment generated in the polysilicon production process according to claim 3, characterized in that: The first distributor (31) includes a first circular distribution pipe (311) and two first support pipes (312), wherein the first support pipe (312) connects the first circular distribution pipe (311) and the equipment body (10), and one of the two first support pipes (312) is connected to the first circular distribution pipe (311).

5. The high boiling point cracking and processing equipment generated in the polysilicon production process according to claim 4, characterized in that: The two first support tubes (312) are parallel to each other, and both of the two first support tubes (312) extend along the radial direction of the first circular distribution tube (311).

6. The high boiling point cracking and processing equipment generated in the polysilicon production process according to claim 4, characterized in that: The second distributor (32) comprises a second circular distribution pipe (321) and three second support pipes (322), the three second support pipes (322) are respectively connected to the bottom of the reaction chamber (102), the three second support pipes (322) are respectively connected to the second circular distribution pipe (321), the three second support pipes (322) are arranged at intervals along the circumferential direction of the second circular distribution pipe (321), and one of the three second support pipes (322) is connected to the second circular distribution pipe (321).

7. The high boiling point cracking and processing equipment generated in the polysilicon production process according to claim 6, characterized in that: The diameter of the first circular distribution pipe (311) is equal to the diameter of the second circular distribution pipe (321).

8. The high boiling point cracking and processing equipment generated in the polysilicon production process according to claim 6, characterized in that: The first circular distribution pipe (311) and the second circular distribution pipe (321) are both provided with a plurality of gas outlet holes, and the plurality of gas outlet holes face the bottom of the reaction chamber (102).

9. The high boiling point cracking and processing equipment generated in the polysilicon production process according to any one of claims 3 to 8, characterized in that: The stirring assembly (20) comprises a stirring shaft (24) and a plurality of stirrers, wherein the plurality of stirrers are connected to the stirring shaft (24); The distributor, the stirring shaft (24) and the plurality of stirrers are all metal parts made of Hastelloy.

10. The high boiling point cracking and processing equipment generated in the polysilicon production process according to claim 9, characterized in that: The plurality of agitators include a first agitator (251) and a second agitator (252). In the first direction, the first agitator (251) is higher than the first distributor (31), and the second agitator (252) is located between the first distributor (31) and the second distributor (32).

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