Film layer structure and low-emissivity coated glass with adjustable transmission color

Abstract

The utility model discloses a film layer structure and low-emissivity coated glass with adjustable transmission color, and belongs to the technical field of glass, the film layer structure comprises a first dielectric layer, a first functional layer, a second dielectric layer, a second functional layer and a third dielectric layer which are sequentially arranged along the thickness direction; the first dielectric layer is a SiNx layer; the second dielectric layer comprises a SiNx layer, a Si layer and a SiNx layer which are stacked in sequence; the third dielectric layer is a SiNx layer; the first functional layer and the second functional layer are both Ag layers. According to the film layer structure, the glass transmission color can be adjusted, and therefore the overall attractiveness of the glass curtain wall is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of glass production, and particularly relates to a film layer structure and a low-emissivity coated glass with adjustable transmitted color. Background Art

[0002] Low-emissivity coated glass (Low-E glass) is a film system product coated with multiple layers of metals or other compounds on the glass surface. Low-emissivity coated glass has the characteristics of high transmittance to visible light and high reflectance to medium and far infrared rays. Therefore, it has excellent heat insulation effect, sunshade performance and good light transmittance. It can not only meet the requirements of indoor lighting, but also block solar radiation from entering the room and reduce the load of indoor air conditioners.

[0003] At present, many curtain wall buildings design the low-emissivity coated glass as a curved arc structure at the corner in order to pursue the appearance beauty. However, the transmitted color of the conventional curved arc-shaped low-emissivity coated glass generally tends to be blue-green, which is inconsistent with the transmitted color of the low-emissivity coated glass at the flat part, affecting the overall beauty of the glass curtain wall. Summary of the Utility Model

[0004] The main purpose of the utility model is to propose a film layer structure and a low-emissivity coated glass with adjustable transmitted color, aiming to realize the adjustable transmitted color of the glass.

[0005] To achieve the above purpose, the film layer structure proposed by the utility model includes a first dielectric layer, a first functional layer, a second dielectric layer, a second functional layer and a third dielectric layer which are sequentially arranged along the thickness direction;

[0006] The first dielectric layer is a SiN x layer; the second dielectric layer includes a SiN x layer, a Si layer, and a SiN x layer which are sequentially stacked; the third dielectric layer is a SiN x layer; both the first functional layer and the second functional layer are Ag layers.

[0007] In an embodiment, the thickness of the first dielectric layer is 10nm - 20nm; and / or, the thickness of the first functional layer is 6nm - 8nm; and / or, the thickness of the second dielectric layer is 45.5nm - 67nm; and / or, the thickness of the second functional layer is 4nm - 6nm; and / or, the thickness of the third dielectric layer is 15nm - 25nm.

[0008] In an embodiment, the thicknesses of the SiN x layer, the Si layer, and the SiN x layer in the second dielectric layer are 10nm - 20nm, 0.5nm - 2nm, and 35nm - 45nm in sequence.

[0009] In one embodiment, a protective layer is provided on at least one side of the first functional layer and / or the second functional layer, and the protective layer is a NiCr layer.

[0010] In one embodiment, a first protective layer and a second protective layer are respectively provided on both sides of the first functional layer; a third protective layer is provided on the outer side of the second functional layer.

[0011] In one embodiment, the thickness of the first protective layer is 0.5 nm - 2 nm; and / or the thickness of the second protective layer is 0.5 nm - 2 nm; and / or the thickness of the third protective layer is 7 nm - 9 nm.

[0012] In one embodiment, an interface layer is provided at least at one of the outer side of the first dielectric layer, both sides of the second dielectric layer, and the inner side of the third dielectric layer, and the interface layer is selected from a ZnAlO x layer or an AZO layer.

[0013] In one embodiment, a first interface layer is provided on the outer side of the first dielectric layer, a second interface layer and a third interface layer are respectively provided on both sides of the second dielectric layer, and a fourth interface layer is provided on the inner side of the third dielectric layer;

[0014] The first interface layer is a ZnAlO x layer; and / or the second interface layer is an AZO layer; and / or the third interface layer is a ZnAlO x layer; and / or the fourth interface layer is an AZO layer.

[0015] In one embodiment, the thickness of the first interface layer is 5 nm - 10 nm; and / or the thickness of the second interface layer is 5 nm - 10 nm; and / or the thickness of the third interface layer is 10 nm - 15 nm; and / or the thickness of the fourth interface layer is 5 nm - 10 nm.

[0016] The present utility model also provides a low-emissivity coated glass with adjustable transmitted color, including a glass body and the film layer structure of the present utility model, and the film layer structure is provided on one side of the glass body.

[0017] The film layer structure of the present utility model changes the optical interference path through the first dielectric layer to achieve adjustable yellow and blue transmitted colors, changes the optical interference path through the SiN x layer of the second dielectric layer and the third dielectric layer to achieve a spectrum of destructive blue light wavelengths, and can adjust the transmitted color through the Si layer of the second dielectric layer. Therefore, the film layer structure of the present utility model can achieve adjustable transmitted color of the glass, thereby improving the overall aesthetics of the glass curtain wall. Description of the Drawings

[0018] To more clearly illustrate the embodiments of the present utility model, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on the structures shown in these drawings.

[0019] Figure 1 It is a schematic cross-sectional structure diagram of a color-tunable low-emissivity coated glass in an embodiment of the present utility model;

[0020] Figure 2 It is a schematic cross-sectional structure diagram of a color-tunable low-emissivity coated glass in another embodiment of the present utility model;

[0021] Figure 3 It is a schematic cross-sectional structure diagram of a color-tunable low-emissivity coated glass in still another embodiment of the present utility model;

[0022] Figure 4 It is a schematic cross-sectional structure diagram of a color-tunable low-emissivity coated glass in yet another embodiment of the present utility model.

[0023] Explanation of the reference numerals in the drawings

[0024] 100, film layer structure; 101, first dielectric layer; 102, first functional layer; 103, second dielectric layer; 104, second functional layer; 105, third dielectric layer; 106, first protective layer; 107, second protective layer; 108, third protective layer; 109, fourth protective layer; 110, first connection layer; 111, second connection layer; 112, third connection layer; 113, fourth connection layer;

[0025] 200, glass body. Detailed implementation manners

[0026] It should be noted that if there are descriptions involving "first", "second", etc. in the embodiments of the present utility model, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. Additionally, if "and / or" or "and / or" appears throughout the text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. "At least one" as used in the embodiments of the present utility model refers to one or more, and "a plurality" refers to two or more.

[0027] The "range" disclosed in the present utility model is defined in the form of a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundaries of a specific range. The ranges defined in this way can include or exclude the end values, and can be combined arbitrarily, that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60 - 120 and 80 - 110 are listed for a specific parameter, ranges of 60 - 110 and 80 - 120 are also contemplated. In addition, if the minimum range values 1 and 2 are listed, and if the maximum range values 3, 4, and 5 are listed, then the following ranges are all contemplated: 1 - 3, 1 - 4, 1 - 5, 2 - 3, 2 - 4, and 2 - 5. In the present utility model, unless otherwise stated, the numerical range "a - b" represents an abbreviated representation of any real number combination between a and b, where both a and b are real numbers. For example, the numerical range "0 - 5" means that all real numbers between "0 - 5" have been fully listed herein, and "0 - 5" is only an abbreviated representation of these numerical combinations. Additionally, when stating that a certain parameter is an integer ≥2, it is equivalent to disclosing that the parameter is, for example, the integers 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0028] In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the fact that those of ordinary skill in the art can implement them. When the combination of technical solutions results in contradictions or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection required by the present utility model.

[0029] Currently, many curtain wall buildings design low - emissivity coated glass as an arc structure at the corner to pursue the appearance beauty. At present, Ag is often used as the functional layer for the low - emissivity coated glass forming the arc structure to reduce the emissivity of the coated glass. The Ag - based film layer needs to be heat - treated during the formation process, so its transmitted color is bluish - green. It is difficult to correct the transmitted color while ensuring the product performance and appearance, resulting in inconsistent transmitted colors with the low - emissivity coated glass at the flat part and affecting the overall beauty of the glass curtain wall.

[0030] For this reason, the film layer structure proposed by the present utility model includes a first dielectric layer, a first functional layer, a second dielectric layer, a second functional layer, and a third dielectric layer arranged in sequence along the thickness direction;

[0031] The first dielectric layer is a SiN x layer; the second dielectric layer includes a SiN x layer, a Si layer, and a SiN x layer arranged in sequence; the third dielectric layer is a SiN x layer; both the first functional layer and the second functional layer are Ag layers.

[0032] The first dielectric layer is SiN x layer, which can change the optical interference path and realize adjustable yellow and blue transmission colors; the SiN x layer of the second dielectric layer and the third dielectric layer can change the optical interference path to achieve destructive interference of blue light wavelength, and the Si layer of the second dielectric layer can adjust the transmission color. When a light beam passes through this film layer structure, by using the principle of optical interference and adjusting the thickness of each layer, optical interference cancellation can be achieved, thereby realizing adjustable transmission color.

[0033] When the first dielectric layer is the layer adhered to the glass, its material SiN x can also prevent the diffusion and migration of sodium elements in the glass body into the film layer structure and damage the structure of the functional layer; at this time, the third dielectric layer is the outermost layer of the entire film layer structure, and its material SiN x also has relatively high hardness, stable physical and chemical properties, and strong anti-wear ability, which can improve the mechanical properties and scratch resistance of the film layer structure.

[0034] Both the first functional layer and the second functional layer are Ag layers. Ag has low emissivity performance, can reduce the emissivity of the coated glass, shield infrared light, and achieve the effect of energy conservation.

[0035] Through the cooperation of the above-mentioned layers, the film layer structure of the present utility model not only has good low emissivity performance, but also can realize adjustable glass transmission color, improving the overall aesthetics of the glass curtain wall.

[0036] In the embodiment of the present utility model, the thickness of the first dielectric layer is 10nm - 20nm; and / or, the thickness of the first functional layer is 6nm - 8nm; and / or, the thickness of the second dielectric layer is 45.5nm - 67nm; and / or, the thickness of the second functional layer is 4nm - 6nm; and / or, the thickness of the third dielectric layer is 15nm - 25nm. When the film layer structure formed with this preferred thickness is used for coated glass, the transmission colors of the bent glass and the flat glass can be made similar or consistent.

[0037] In the embodiment of the present utility model, the thicknesses of the SiN x layer, Si layer, and SiN x layer in the second dielectric layer are 10nm - 20nm, 0.5nm - 2nm, and 35nm - 45nm in sequence.

[0038] In the embodiment of the present utility model, at least one side of the first functional layer and / or the second functional layer is provided with a protective layer, and the protective layer is a NiCr layer.

[0039] The NiCr layer is mainly used to protect the Ag layer, preventing the Ag layer from being oxidized and affecting its optical properties. In addition, the NiCr layer has strong absorption and reflection properties for sunlight, and can adjust the overall transmission and reflection properties of the film structure for sunlight.

[0040] In an embodiment of the present utility model, a first protective layer and a second protective layer are respectively provided on both sides of the first functional layer; a third protective layer is provided on the outer side of the second functional layer. By providing protective layers on both sides of the first functional layer and on the outer side of the second functional layer, the Ag layer can be protected more efficiently.

[0041] In an embodiment of the present utility model, the thickness of the first protective layer is 0.5 nm - 2 nm; and / or, the thickness of the second protective layer is 0.5 nm - 2 nm; and / or, the thickness of the third protective layer is 7 nm - 9 nm. Within this preferred thickness range, oxygen can be effectively blocked from contacting the Ag layer, thereby achieving a better protection effect.

[0042] In an embodiment of the present utility model, an adhesion layer is provided at least at one of the outer side of the first dielectric layer, both sides of the second dielectric layer, and the inner side of the third dielectric layer, and the adhesion layer is selected from one of the ZnAlO x layer and the AZO layer.

[0043] The adhesion layer is provided on the surface of the SiN x layer, mainly to improve the firmness between the film layers. Specifically, the ZnAlO x layer can exist as an adhesion layer. In addition, it can also allow the Ag layer to grow uniformly, so that the single-layer uniformity of the film structure reaches the best; the AZO layer is fired from ZnO x and AlO x in a certain proportion. This material is an existing product, and the AZO layer has the characteristic of uniform and dense film layers, which can improve the stability of the film structure.

[0044] In an embodiment of the present utility model, a first adhesion layer is provided on the outer side of the first dielectric layer, a second adhesion layer and a third adhesion layer are respectively provided on both sides of the second dielectric layer, and a fourth adhesion layer is provided on the inner side of the third dielectric layer;

[0045] The first adhesion layer is a ZnAlO x layer; and / or, the second adhesion layer is an AZO layer; and / or, the third adhesion layer is a ZnAlO x layer; and / or, the fourth adhesion layer is an AZO layer. By providing four adhesion layers, a film layer structure that is not easily delaminated and is stable can be obtained.

[0046] In an embodiment of the present utility model, the thickness of the first connection layer is 5 nm - 10 nm; and / or, the thickness of the second connection layer is 5 nm - 10 nm; and / or, the thickness of the third connection layer is 10 nm - 15 nm; and / or, the thickness of the fourth connection layer is 5 nm - 10 nm. Within this preferred thickness range, the connection layer is more firmly bonded to the adjacent layer.

[0047] The present utility model also provides a low-emissivity coated glass with adjustable transmitted color, which includes a glass body and the film layer structure of the present utility model, and the film layer structure is disposed on one side of the glass body. For the specific setting of the film layer structure, reference may be made to the above embodiments. Since the low-emissivity coated glass with adjustable transmitted color of the present utility model adopts all the technical solutions of the above embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments, which will not be elaborated herein one by one.

[0048] The following will be described in conjunction with specific embodiments.

[0049] Embodiment 1

[0050] The low-emissivity coated glass with adjustable transmitted color, as shown in Figure 1 , includes a film layer structure 100 and a glass body 200, and the film layer structure 100 is disposed on the outer side (i.e., Figure 1 the upper side in

[0051] ) of the glass body 200. Figure 1 The film layer structure 100 includes a first dielectric layer 101, a first functional layer 102, a second dielectric layer 103, a second functional layer 104, and a third dielectric layer 105, which are sequentially disposed from inside to outside (i.e.,

[0052] from bottom to top in Figure 1 ).

[0052] The first dielectric layer 101 is a SiN x layer with a thickness of 10 nm; the first functional layer 102 is an Ag layer with a thickness of 6 nm; the second dielectric layer 103 includes a SiN x layer, a Si layer, and a SiN x layer that are sequentially stacked, and their thicknesses are 10 nm, 0.5 nm, and 35 nm respectively; the second functional layer 104 is an Ag layer with a thickness of 4 nm; the third dielectric layer 105 is a SiN x layer with a thickness of 15 nm.

[0053] The glass body 200 is white glass with a thickness of 6 mm.

[0054] The preparation method of the low-emissivity coated glass with adjustable transmitted color includes the following steps:

[0055] (1) Magnetron sputtering deposition of the first dielectric layer on the glass body, with specific parameters: 2 - 3 AC rotating targets; the target material is configured as silicon aluminum (SiNx ); Using argon and nitrogen as process gases, with the volume ratio of argon to nitrogen being 1:1.2, and the sputtering pressure being 2.5 - 8.5×10 -3 mbar, the nitrogen introduced during sputtering reacts with silicon to form a silicon nitride layer; the coating thickness is 10 nm.

[0056] (2) Magnetron sputtering the first functional layer on the first dielectric layer, with specific parameters: 1 DC planar target; the target material is configured as Ag; using pure argon as the process gas, the sputtering pressure is 2.5 - 5.5×10 -3 mbar; the coating thickness is 6 nm.

[0057] (3) Magnetron sputtering the SiN layer in the second dielectric layer on the first functional layer, with specific parameters: 2 - 3 AC rotating targets; the target material is configured as silicon-aluminum (SiN x ); Using argon and nitrogen as process gases, with the volume ratio of argon to nitrogen being 1:1.2, and the sputtering pressure being 2.5 - 8.5×10 x ) mbar; the coating thickness is 10 nm. -3

[0058] (4) Magnetron sputtering the Si layer on the SiN layer in the second dielectric layer, with specific parameters: 1 AC rotating target; the target material is configured as silicon-aluminum (SiN x ); Using pure argon as the process gas, the sputtering pressure is 2.5 - 8.5×10 x ) mbar; the coating thickness is 0.5 nm. -3

[0059] (5) Magnetron sputtering the SiN layer on the Si layer in the second dielectric layer, with specific parameters: 5 - 6 AC rotating targets; the target material is configured as silicon-aluminum (SiN x ); Using argon and nitrogen as process gases, with the volume ratio of argon to nitrogen being 1:1.2, and the sputtering pressure being 2.5 - 8.5×10 x ) mbar; the coating thickness is 35 nm. -3

[0060] (6) Magnetron sputtering the second functional layer on the SiN layer in the second dielectric layer, with specific parameters: 1 DC planar target; the target material is configured as Ag; using pure argon as the process gas, the sputtering pressure is 2.5 - 5.5×10 x mbar; the coating thickness is 4 nm. -3

[0061] (7) Magnetron sputtering the third dielectric layer on the second functional layer, with specific parameters: 3 - 5 AC rotating targets; the target material is configured as silicon-aluminum (SiN x ​​​​); Using argon and nitrogen as process gases, the volume ratio of argon to nitrogen is 1:1.3, and the sputtering pressure is 2.5 - 8.5×10 -3 mbar; The coating thickness is 15 nm.

[0062] Among them, the driving speed of the magnetron sputtering chamber is controlled at 4.5 - 5 m / min.

[0063] Example 2

[0064] The color-tunable low-emissivity coated glass, referring to Figure 2 as shown, includes a film layer structure 100 and a glass body 200, and the film layer structure 100 is arranged on the outer side of the glass body 200.

[0065] The film layer structure 100 includes a first dielectric layer 101, a first protective layer 106, a first functional layer 102, a second protective layer 107, a second dielectric layer 103, a second functional layer 104, a third protective layer 108, and a third dielectric layer 105, which are arranged in sequence from the inside to the outside.

[0066] The first dielectric layer 101 is a SiN x layer with a thickness of 20 nm; the first protective layer 106 is a NiCr layer with a thickness of 0.5 nm; the first functional layer 102 is an Ag layer with a thickness of 8 nm; the second protective layer 107 is a NiCr layer with a thickness of 0.5 nm; the second dielectric layer 103 includes SiN x layers, Si layers, and SiN x layers arranged in a stacked manner, and their thicknesses are 20 nm, 2 nm, and 45 nm in sequence; the second functional layer 104 is an Ag layer with a thickness of 6 nm; the third protective layer 108 is a NiCr layer with a thickness of 7 nm; the third dielectric layer 105 is a SiN x layer with a thickness of 25 nm.

[0067] The glass body 200 is white glass with a thickness of 6 mm.

[0068] The preparation method of the color-tunable low-emissivity coated glass includes the following steps:

[0069] (1) Magnetron sputtering deposition of the first dielectric layer on the glass body, and the specific parameters are: 2 - 3 AC rotating targets; the target material configuration is silicon aluminum (SiN x ); Using argon and nitrogen as process gases, the volume ratio of argon to nitrogen is 1:1.2, and the sputtering pressure is 2.5 - 8.5×10 -3 mbar; The coating thickness is 20 nm.

[0070] (2) Magnetron sputtering of the first protective layer on the first dielectric layer, the specific parameters are: one DC planar target; the target material is NiCr; pure argon is used as the process gas, and the sputtering pressure is 2.5-5.5×10 -3 mbar; coating thickness is 0.5nm.

[0071] (3) Magnetron sputtering of the first functional layer on the first protective layer, the specific parameters are: one DC planar target; the target material is Ag; pure argon is used as the process gas, and the sputtering pressure is 2.5-5.5×10 -3 mbar; coating thickness is 8nm.

[0072] (4) Magnetron sputtering of the second protective layer on the first functional layer, the specific parameters are: one DC planar target; the target material is NiCr; pure argon is used as the process gas, and the sputtering pressure is 2.5-5.5×10 -3 mbar; coating thickness is 0.5nm.

[0073] (5) Magnetron sputtering of SiN in the second dielectric layer on the second protective layer x The specific parameters are: 2-3 AC rotating targets; the target material is silicon aluminum (SiN x ); Argon and nitrogen are used as process gases, the volume ratio of argon and nitrogen is 1:1.2, and the sputtering pressure is 2.5-8.5×10 -3 mbar; coating thickness is 20nm.

[0074] (6) SiN in the second dielectric layer x The specific parameters of magnetron sputtering Si layer on the layer are as follows: 1 AC rotating target; the target material is silicon aluminum; pure argon is used as the process gas, and the sputtering pressure is 2.5-8.5×10 -3 mbar; coating thickness is 2nm.

[0075] (7) Magnetron sputtering SiN on the Si layer in the second dielectric layer x The specific parameters are: 5-6 AC rotating targets; the target material is silicon aluminum (SiN x ); Argon and nitrogen are used as process gases, the volume ratio of argon and nitrogen is 1:1.2, and the sputtering pressure is 2.5-8.5×10 -3 mbar; coating thickness is 45nm.

[0076] (8) SiN in the second dielectric layer x The second functional layer was magnetron sputtered on the layer. The specific parameters were: one DC planar target; the target material was Ag; pure argon was used as the process gas, and the sputtering pressure was 2.5-5.5×10 -3 mbar; coating thickness is 6nm.

[0077] (9) Magnetron sputter the third protective layer on the second functional layer. The specific parameters are as follows: 1 DC planar target; the target material is configured as NiCr; pure argon is used as the process gas, and the sputtering pressure is 2.5 - 5.5×10 -3 mbar; the coating thickness is 7 nm.

[0078] (10) Magnetron sputter the third dielectric layer on the third protective layer. The specific parameters are as follows: 3 - 5 AC rotating targets; the target material is configured as silicon-aluminum (SiN x ); argon and nitrogen are used as the process gas, and the volume ratio of argon to nitrogen is 1:1.3. The sputtering pressure is 2.5 - 8.5×10 -3 mbar; the coating thickness is 25 nm.

[0079] Among them, the driving speed of the magnetron sputtering chamber is controlled at 4.5 - 5 m / min.

[0080] Example 3

[0081] Different from Example 2, as shown in the reference Figure 3 , in this example, protective layers are provided on both sides of the second functional layer 104. That is, the film layer structure 100 of this example includes a first dielectric layer 101, a first protective layer 106, a first functional layer 102, a second protective layer 107, a second dielectric layer 103, a fourth protective layer 109, a second functional layer 104, a third protective layer 108, and a third dielectric layer 105, which are arranged in sequence from the inside to the outside. The fourth protective layer 109 is a NiCr layer with a thickness of 7 nm, and other structures are the same as those in Example 2.

[0082] Example 4

[0083] The color-tunable low-emissivity coated glass, as shown in the reference Figure 4 , includes a film layer structure 100 and a glass body 200. The film layer structure 100 is arranged on the outer side of the glass body 200.

[0084] The film layer structure 100 includes a first dielectric layer 101, a first connection layer 110, a first protective layer 106, a first functional layer 102, a second protective layer 107, a second connection layer 111, a second dielectric layer 103, a third connection layer 112, a second functional layer 104, a third protective layer 108, a fourth connection layer 113, and a third dielectric layer 105, which are arranged in sequence from the inside to the outside.

[0085] The first dielectric layer 101 is a SiN x layer with a thickness of 15 nm; the first connection layer 110 is a ZnAlO x layer, which is mainly used to connect SiN xThe NiCr layer has a thickness of 5 nm; the first protective layer 106 is a NiCr layer with a thickness of 1 nm; the first functional layer 102 is an Ag layer with a thickness of 7 nm; the second protective layer 107 is a NiCr layer with a thickness of 1 nm; the second connecting layer 111 is an AZO layer, mainly used for connecting SiN x The NiCr layer has a thickness of 5 nm; the second dielectric layer 103 includes SiN stacked in sequence x layers, Si layer, SiN x layers, and their thicknesses are 15 nm, 1 nm, and 40 nm in sequence; the third connecting layer 112 is a ZnAlO x layer, mainly used for connecting SiN x The Ag layer has a thickness of 10 nm; the second functional layer 104 is an Ag layer with a thickness of 5 nm; the third protective layer 108 is a NiCr layer with a thickness of 8 nm; the fourth connecting layer 113 is an AZO layer, mainly used for connecting SiN x The NiCr layer has a thickness of 5 nm; the third dielectric layer 105 is SiN x layer, and its thickness is 20 nm.

[0086] The glass body 200 is white glass with a thickness of 6 mm.

[0087] The preparation method of the color-tunable low-emissivity coated glass includes the following steps:

[0088] (1) Magnetron sputter deposit the first dielectric layer on the glass body. The specific parameters are: 2 - 3 AC rotating targets; the target material configuration is silicon aluminum (SiN x ); using argon and nitrogen as process gases, the volume ratio of argon to nitrogen is 1:1.2, and the sputtering pressure is 2.5 - 8.5×10 -3 mbar; the coating thickness is 15 nm.

[0089] (2) Magnetron sputter the first connecting layer on the first dielectric layer. The specific parameters are: 1 - 2 AC rotating targets; the target material configuration is zinc aluminum (ZnAlO x ); using argon and oxygen as process gases, the volume ratio of argon to oxygen is 1:1.3, and the sputtering pressure is 2.5 - 8.5×10 -3 mbar; the coating thickness is 5 nm.

[0090] (3) Magnetron sputter the first protective layer on the first connecting layer. The specific parameters are: 1 DC planar target; the target material configuration is NiCr; using pure argon as the process gas, the sputtering pressure is 2.5 - 5.5×10 -3 mbar; the coating thickness is 1 nm.

[0091] (4) Magnetron sputter the first functional layer on the first protective layer. The specific parameters are as follows: 1 DC planar target; the target material is configured as Ag; pure argon is used as the process gas, and the sputtering pressure is 2.5 - 5.5×10 -3 mbar; the coating thickness is 7 nm.

[0092] (5) Magnetron sputter the second protective layer on the first functional layer. The specific parameters are as follows: 1 DC planar target; the target material is configured as NiCr; pure argon is used as the process gas, and the sputtering pressure is 2.5 - 5.5×10 -3 mbar; the coating thickness is 1 nm.

[0093] (6) Magnetron sputter the second connection layer on the second protective layer. The specific parameters are as follows: 1 AC rotating target; the target material is configured as aluminum zinc oxide AZO; pure argon is used as the process gas, and the sputtering pressure is 2.5 - 8.5×10 -3 mbar; the coating thickness is 5 nm.

[0094] (7) Magnetron sputter the SiN layer in the second dielectric layer on the second connection layer. The specific parameters are as follows: 2 - 3 AC rotating targets; the target material is configured as silicon aluminum (SiN x ); argon and nitrogen are used as the process gases, and the volume ratio of argon to nitrogen is 1:1.2. The sputtering pressure is 2.5 - 8.5×10 x ) mbar; the coating thickness is 15 nm. -3 mbar; the coating thickness is 15 nm.

[0095] (8) Magnetron sputter the Si layer on the SiN layer in the second dielectric layer. The specific parameters are as follows: 1 AC rotating target; the target material is configured as silicon aluminum (SiN x ); pure argon is used as the process gas, and the sputtering pressure is 2.5 - 8.5×10 x ) mbar; the coating thickness is 1 nm. -3 mbar; the coating thickness is 1 nm.

[0096] (9) Magnetron sputter the SiN layer on the Si layer in the second dielectric layer. The specific parameters are as follows: 5 - 6 AC rotating targets; the target material is configured as silicon aluminum (SiN x ); argon and nitrogen are used as the process gases, and the volume ratio of argon to nitrogen is 1:1.2. The sputtering pressure is 2.5 - 8.5×10 x ) mbar; the coating thickness is 40 nm. -3 mbar; the coating thickness is 40 nm.

[0097] (10) Magnetron sputter the third connection layer on the SiN layer in the second dielectric layer. The specific parameters are as follows: 1 - 2 AC rotating targets; the target material is configured as zinc aluminum (ZnAlO x ); x) Using argon and oxygen as process gases, with the volume ratio of argon to oxygen being 1:1.3 and the sputtering pressure being 2.5 - 8.5×10 -3 mbar; the coating thickness is 10 nm.

[0098] (11) Magnetron sputter the second functional layer on the third connecting layer, with the specific parameters: 1 DC planar target; the target material configuration is Ag; using pure argon as the process gas, the sputtering pressure is 2.5 - 5.5×10 -3 mbar; the coating thickness is 5 nm.

[0099] (12) Magnetron sputter the third protective layer on the second functional layer, with the specific parameters: 1 DC planar target; the target material configuration is NiCr; using pure argon as the process gas, the sputtering pressure is 2.5 - 5.5×10 -3 mbar; the coating thickness is 8 nm.

[0100] (13) Magnetron sputter the fourth connecting layer on the third protective layer, with the specific parameters: 1 AC rotating target; the target material configuration is aluminum zinc oxide AZO; using pure argon as the process gas, the sputtering pressure is 2.5 - 8.5×10 -3 mbar; the coating thickness is 5 nm.

[0101] (14) Magnetron sputter the third dielectric layer on the fourth connecting layer, with the specific parameters: 3 - 5 AC rotating targets; the target material configuration is silicon aluminum (SiN x ); using argon and nitrogen as process gases, with the volume ratio of argon to nitrogen being 1:1.3 and the sputtering pressure being 2.5 - 8.5×10 -3 mbar; the coating thickness is 20 nm.

[0102] Among them, the driving speed of the magnetron sputtering chamber is controlled at 4.5 - 5 m / min.

[0103] The above is only an exemplary embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structural transformation made under the technical concept of the present invention by using the content of the specification and drawings of the present invention, or any direct / indirect application in other related technical fields, is included in the patent protection scope of the present invention.

Claims

1. A film structure, characterized in that: It comprises a first dielectric layer, a first functional layer, a second dielectric layer, a second functional layer and a third dielectric layer which are sequentially arranged along a thickness direction; The first dielectric layer is SiN x The second dielectric layer comprises SiN x Layer, Si layer, SiN x The third dielectric layer is SiN x layer; the first functional layer and the second functional layer are both Ag layers.

2. The film structure according to claim 1, characterized in that: The thickness of the first dielectric layer is 10nm-20nm; And / or, the thickness of the first functional layer is 6nm-8nm; And / or, the thickness of the second dielectric layer is 45.5nm-67nm; And / or, the thickness of the second functional layer is 4nm-6nm; And / or, the thickness of the third dielectric layer is 15nm-25nm.

3. The film structure according to claim 2, characterized in that: The second dielectric layer SiN x Layer, Si layer, SiN x The thickness of the layers are 10nm-20nm, 0.5nm-2nm, and 35nm-45nm, respectively.

4. The film structure according to claim 1, characterized in that: At least one side of the first functional layer and / or the second functional layer is provided with a protective layer, and the protective layer is a NiCr layer.

5. The film structure according to claim 4, characterized in that: A first protective layer and a second protective layer are respectively disposed on both sides of the first functional layer; and a third protective layer is disposed on the outer side of the second functional layer.

6. The film structure according to claim 5, characterized in that: The thickness of the first protective layer is 0.5nm-2nm; And / or, the thickness of the second protective layer is 0.5nm-2nm; And / or, the thickness of the third protective layer is 7nm-9nm.

7. The film structure according to any one of claims 1 to 6, characterized in that: A connection layer is provided at least one of the outer side of the first dielectric layer, the two sides of the second dielectric layer, and the inner side of the third dielectric layer, wherein the connection layer is selected from ZnAlO x One of the layers and AZO layer.

8. The film structure according to claim 7, characterized in that: A first connecting layer is disposed on the outer side of the first dielectric layer, a second connecting layer and a third connecting layer are disposed on both sides of the second dielectric layer, and a fourth connecting layer is disposed on the inner side of the third dielectric layer; The first tie layer is ZnAlO x layer; and / or, the second tie layer is an AZO layer; And / or, the third tie layer is ZnAlO x layer; And / or, the fourth tie layer is an AZO layer.

9. The film structure according to claim 8, characterized in that: The thickness of the first connection layer is 5nm-10nm; And / or, the thickness of the second connection layer is 5nm-10nm; And / or, the thickness of the third connection layer is 10nm-15nm; And / or, the thickness of the fourth connection layer is 5nm-10nm.

10. A low-emissivity coated glass with adjustable transmittance color, characterized in that: The invention comprises a glass body and the film layer structure according to any one of claims 1 to 9, wherein the film layer structure is arranged on one side of the glass body.

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