Heating cavity and processing equipment
By designing a heating chamber that is adapted to the shape of a vehicle and installing a heating element on the cavity wall to control its distance from the vehicle, the problems of low heating efficiency and uneven heat distribution of the existing heating chamber are solved, and more efficient heat transfer and uniform heating of the silicon wafer are achieved.
Patent Information
- Application Number
- CN202422039062.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-21
- Publication Date
- 2025-06-27
- Estimated Expiration
- 2034-08-21
AI Technical Summary
In the existing semiconductor production process, the heating efficiency of the heating chamber needs to be improved, and there are problems of heat loss and uneven heat distribution.
A heating cavity is designed, which includes a plurality of cavity walls, which enclose to form a receiving space suitable for the vehicle, and a heating element is installed on the cavity wall to ensure that the distance between the heating element and the vehicle is between 10 mm and 150 mm to optimize heat transfer.
By reducing the invalid space, directly conducting heat and controlling the heat transfer distance, the heating efficiency is significantly improved, excessive heat loss is avoided, and uniform heating of the silicon wafer is achieved.
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Figure CN223033454U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of photovoltaic material processing, and more specifically, to a heating cavity and a processing device. Background Art
[0002] The heating efficiency of the existing heating cavity in the semiconductor production process needs to be improved. Summary of the Utility Model
[0003] In the first aspect of this application, a heating cavity is provided. The heating cavity is used to heat wafers on a carrier. The heating cavity includes a plurality of cavity walls, and the plurality of cavity walls enclose an accommodation space adapted to the carrier. At least some of the plurality of cavity walls are used to mount heating elements to generate heat, and the distance between the cavity wall for mounting the heating element and the carrier is greater than or equal to 10 mm and less than or equal to 150 mm.
[0004] In the above heating cavity, the plurality of cavity walls enclose an accommodation space adapted to the carrier, which is conducive to reducing the ineffective space in the heating cavity and thus reducing heat loss. In addition, the heating element can be directly mounted on the cavity wall, so that the heat of the heating element can be directly conducted from the cavity wall to the carrier and the wafer, thereby reducing the intermediate medium in the heat conduction path and maximizing the heat transfer efficiency. Further, the distance between the cavity wall for mounting the heating element and the carrier is greater than or equal to 10 mm and less than or equal to 150 mm. Thus, while ensuring that the heat of the heating cavity can be effectively transferred to the wafer, it is also conducive to avoiding excessive heat dissipation. Specifically, if the distance between the cavity wall for mounting the heating element and the carrier is too close, it may cause local overheating of the wafer; if the distance between the cavity wall for mounting the heating element and the carrier is too far, the heat transfer efficiency will decrease. Therefore, the above distance range helps to find the best balance between heat conduction and heat dissipation.
[0005] In summary, the above heating cavity is conducive to improving the heating efficiency by optimizing the shape of the accommodation space, reasonably arranging the heating elements, and controlling the distance between the cavity wall and the carrier.
[0006] In some embodiments, the plurality of cavity walls enclose a bottomless rectangular cavity; the bottomless rectangular cavity includes a plurality of segments connected in sequence, and each segment includes a part in an inverted U-shaped structure. The inverted U-shaped structure includes a top wall, a first side wall, and a second side wall. The first side wall and the second side wall are opposite and spaced apart, and the top wall is connected to both the first side wall and the second side wall. Each segment is formed by metal casting, and the corresponding top walls of adjacent segments are welded, the corresponding first side walls of adjacent segments are welded, and the corresponding second side walls of adjacent segments are welded.
[0007] In some embodiments, among multiple segments, one of the segments at both ends further includes a third side wall, the third side wall is connected to the inverted U-shaped structure of its affiliated segment, and an air extraction port penetrating through the bottomless rectangular cavity is formed.
[0008] In some embodiments, the bottomless rectangular cavity includes an inner cavity, an outer cavity and reinforcing ribs, the outer cavity is located outside the inner cavity, and the reinforcing ribs are located between the inner cavity and the outer cavity and are connected to the inner cavity and the outer cavity.
[0009] In some embodiments, the reinforcing ribs are integrally cast with the inner cavity, or the reinforcing ribs are integrally cast with the outer cavity.
[0010] In some embodiments, each reinforcing rib extends along the length direction of the bottomless rectangular cavity, each segment includes an inner cavity, an outer cavity and a plurality of reinforcing ribs arranged at intervals between the inner cavity and the outer cavity, and the inner cavities, outer cavities and reinforcing ribs in adjacent segments are respectively connected by welding.
[0011] In some embodiments, the heating cavity further includes a spray air inlet device, and the spray air inlet device is arranged around the inner side wall of the heating cavity.
[0012] In some embodiments, a vacuum cavity is provided between the inner cavity and the outer cavity.
[0013] In some embodiments, an air cavity is provided between the inner cavity and the outer cavity.
[0014] In some embodiments, a heat insulating material is filled between the inner cavity and the outer cavity.
[0015] In some embodiments, the heating cavity further includes a heating element, the heating element is located on the side of the inner cavity facing away from the outer cavity, and / or the heating element is located on the side of the outer cavity facing away from the inner cavity.
[0016] In some embodiments, the heating cavity further includes a thermocouple, the thermocouple is located on the side of the inner cavity facing away from the outer cavity, and / or the thermocouple is located on the side of the outer cavity facing away from the inner cavity.
[0017] In some embodiments, the heating cavity further includes a cooling channel, the cooling channel is located on the side of the outer cavity facing away from the inner cavity, and / or the cooling channel is located between the inner cavity and the outer cavity.
[0018] In some embodiments, the heating cavity further includes a heat preservation layer, and the heat preservation layer is located on the side of the outer cavity facing away from the inner cavity.
[0019] In some embodiments, the heating cavity further includes a heat insulation protection plate, and the heat insulation protection plate is located on the side of the outer cavity facing away from the inner cavity.
[0020] The second aspect of the present application provides a processing device. The processing device includes a heating cavity and a furnace door according to the second aspect of the present application. The furnace door can block the accommodation space of the heating cavity and form a vacuum cavity with the heating cavity, and the air pressure in the vacuum cavity is lower than the atmospheric pressure.
[0021] The processing device according to the second aspect of the present application at least has the same advantages as the heating cavity according to the first aspect of the present application, which will not be elaborated herein. Description of the Drawings
[0022] Figure 1 It is a schematic structural diagram of a processing device according to an embodiment of the present application.
[0023] Figure 2 is Figure 1 A schematic cross-sectional view taken along line II-II.
[0024] Figure 3 is Figure 1 A schematic cross-sectional view taken along line III-III.
[0025] Description of the Main Component Symbols:
[0026] Processing device 100
[0027] Heating cavity 10
[0028] Segment 11
[0029] First segment 11a
[0030] Second segment 11b
[0031] Third segment 11c
[0032] Top wall 110
[0033] First side wall 111
[0034] Second side wall 112
[0035] Third side wall 113
[0036] Fourth side wall 114
[0037] First flange 12
[0038] Second flange 13
[0039] Inner cavity 10a
[0040] Outer cavity 10b
[0041] Reinforcing rib 10c
[0042] Furnace door 20
[0043] Rectangular cavity R
[0044] Air extraction port H
[0045] Cooling channel V
[0046] First direction X
[0047] Second direction Y
[0048] Third direction Z Detailed implementation manners
[0049] Figure 1 is a schematic structural diagram of a processing device 100 according to an embodiment of the present application. As Figure 1 shown, the processing device 100 includes a heating cavity 10 and a furnace door 20. The heating cavity 10 is used to heat the silicon wafers on the carrier. The furnace door 20 is connected to the heating cavity 10 in an openable and closable manner.
[0050] In some embodiments, the heating cavity 10 includes a plurality of cavity walls, and the plurality of cavity walls enclose an accommodation space adapted to the carrier. At least some of the plurality of cavity walls are used to mount heating elements to generate heat, and the distance between the cavity walls for mounting the heating elements and the carrier is greater than or equal to 10 mm and less than or equal to 150 mm (such as, 10 mm to 30 mm, 30 mm to 50 mm, 50 mm to 80 mm, 80 mm to 100 mm, 100 mm to 130 mm, 130 mm to 150 mm, etc.). The furnace door 20 can seal the accommodation space of the heating cavity 10 and form a vacuum cavity with the heating cavity 10, and the air pressure in the vacuum cavity is lower than the atmospheric pressure.
[0051] In the above embodiments, the plurality of cavity walls enclose an accommodation space adapted to the carrier, which is beneficial to reducing the ineffective space in the heating cavity 10, thereby reducing heat loss. In addition, the heating elements can be directly mounted on the cavity walls, so that the heat of the heating elements can be directly conducted from the cavity walls to the carrier and the silicon wafers, thereby reducing the intermediate medium in the heat conduction path and maximizing the heat transfer efficiency. Further, the distance between the cavity walls for mounting the heating elements and the carrier is greater than or equal to 10 mm and less than or equal to 150 mm. Thus, while ensuring that the heat of the heating cavity can be effectively transferred to the silicon wafers, it is also beneficial to avoid excessive heat dissipation. Specifically, if the distance between the cavity walls for mounting the heating elements and the carrier is too close, it may cause local overheating of the silicon wafers; if the distance is too far, the heat transfer efficiency will be reduced. Therefore, the above distance range helps to find the best balance between heat conduction and heat dissipation.
[0052] In summary, the above heating cavity 10 is beneficial to improving the heating efficiency by optimizing the shape of the accommodation space, reasonably arranging the heating elements, and controlling the distance between the cavity walls and the carrier.
[0053] In some embodiments, at least three successively connected cavity walls are used to mount heating elements for heating. Define the distance between the first cavity wall for mounting the heating element and the carrier as the first spacing, the distance between the second cavity wall for mounting the heating element and the carrier as the second spacing, and the distance between the third cavity wall for mounting the heating element and the carrier as the third spacing; the difference between any two of the first spacing, the second spacing, and the third spacing is less than or equal to 30 mm (such as 0 to 10 mm, 10 mm to 15 mm, 15 mm to 23 mm, 23 mm to 30 mm, etc.).
[0054] Thereby, it can be ensured that the heating elements mounted on different cavity walls can provide a relatively uniform heat distribution. Doing so can avoid the phenomenon of local overheating or overcooling of the silicon wafer caused by too large a distance difference, thereby improving the temperature uniformity of the silicon wafer.
[0055] In some embodiments, the first spacing, the second spacing, and the third spacing are all equal, so as to minimize the area with a large temperature gradient in the heating cavity 10. Specifically, the heating cavity 10 includes a bottomless rectangular cavity R. The furnace door 20 is in the shape of a rectangular flat plate. The furnace door 20 may have at least one of the functions of heating, water cooling, carrier, and conveying. Specifically, the furnace door 20 can move up and down and in and out along the lifting streamline to seal or open the opening of the rectangular cavity R.
[0056] In this embodiment, the rectangular cavity R includes a plurality of segments 11. Each segment 11 is made of metal casting, and the adjacent segments 11 are connected by welding. Thereby, the heating cavity 10 can be used in different vacuum pressure and temperature environments corresponding to different process requirements.
[0057] In the above-mentioned heating cavity 10, the rectangular cavity R is made of segmented metal casting and then welded. Compared with the quartz tube, the rectangular cavity R made of metal material has higher mechanical strength and can withstand higher pressure and mechanical stress. Moreover, compared with the traditional quartz tube circular cavity, the production capacity doubles with the same floor area. The shape of the rectangular cavity R is adapted to the carrier for carrying square sheets (such as silicon wafers for preparing solar cells), saving gas, having high heating efficiency, less heat consumption, increasing the ratio of the volume of the product (such as silicon wafers) to the internal volume of the cavity, shortening the reaction time, and improving the production capacity per unit time.
[0058] In addition, in the above-mentioned heating cavity 10, the rectangular cavity R is formed by segmented metal casting followed by welding. Since segmented casting allows for the design and manufacture of large-sized cavities, the structure of the above-mentioned heating cavity 10 is conducive to improving the flexibility of manufacturing. Moreover, due to the way of overall casting of large-sized cavities, stress and deformation are likely to occur during the cooling process. In the segmented casting method, since the size of each segment 11 is small, it is conducive to reducing the stress and deformation of each segment 11 during the cooling process, and thus is conducive to controlling the casting quality of each segment 11. Therefore, the rectangular cavity R is formed by segmented casting followed by welding, which is conducive to reducing the complexity and uncertainty of overall casting of large-sized cavities, and thus is conducive to reducing the manufacturing cost. In addition, compared with the method of completely welding the cavity with plates, the above-mentioned rectangular cavity R reduces the welding paths to a certain extent, which is conducive to reducing the risk brought by unstable welding quality.
[0059] In other embodiments, if the rectangular cavity R is a small cavity, the rectangular cavity R can be integrally formed by metal casting. Thus, the preparation of the rectangular cavity R can completely eliminate welding, and there are no welding paths in the rectangular cavity R, which is conducive to avoiding the risk brought by unstable welding quality.
[0060] In some embodiments, the furnace door 20 can be cast, but not limited thereto. The materials of the rectangular cavity R and the furnace door 20 can be the same (such as a mirror stainless steel plate), but not limited thereto.
[0061] In other embodiments, the heating cavity 10 is not limited to a rectangular cavity, and it only needs to be adapted to the carrier for carrying the silicon wafer.
[0062] For the convenience of description below, the length direction of the rectangular cavity R is defined as the first direction X, the width direction of the rectangular cavity R is defined as the second direction Y, and the height direction of the rectangular cavity R is defined as the third direction Z. The first direction X, the second direction Y, and the third direction Z intersect pairwise. In this embodiment, the first direction X, the second direction Y, and the third direction Z are perpendicular to each other pairwise.
[0063] A plurality of segments 11 are arranged along the first direction X. Hereinafter, the segment 11 located at the middle position among the plurality of segments 11 is defined as the first segment 11a, the segment 11 located at the outermost end and corresponding to the furnace mouth is defined as the second segment 11b, and the segment 11 located at the outermost end and corresponding to the furnace tail is defined as the third segment 11c.
[0064] Specifically, the first segment 11a, the second segment 11b, and the third segment 11c each include a portion in an inverted U-shaped structure. Each inverted U-shaped structure includes a top wall 110, a first side wall 111, and a second side wall 112. The first side wall 111 and the second side wall 112 are opposite and spaced apart in the second direction Y, and the top wall 110 is connected to both the first side wall 111 and the second side wall 112. The top walls 110 of adjacent segments 11 are welded correspondingly, the first side walls 111 of adjacent segments 11 are welded correspondingly, and the second side walls 112 of adjacent segments 11 are welded correspondingly. Thus, each segment 11 of the heating cavity 10 includes a portion in an inverted U-shaped structure, which is conducive to standardized production, ensuring the consistency of each segment 11, and further improving the manufacturing accuracy and assembly consistency.
[0065] In addition, the top walls 110, the first side walls 111, and the second side walls 112 of adjacent segments 11 are welded correspondingly, which is conducive to ensuring the firm connection between the segments 11, improving the overall structural strength, and reducing the risk of deformation and damage.
[0066] The second segment 11b further includes a third side wall 113 connecting its inverted U-shaped structure, and the third segment 11c further includes a fourth side wall 114 connecting its inverted U-shaped structure. The third side wall 113 and the fourth side wall 114 are opposite and spaced apart in the first direction X. Thus, the third side wall 113, the plurality of inverted U-shaped structures, and the fourth side wall 114 together enclose a bottomless rectangular cavity R. The third side wall 113 and the fourth side wall 114 are respectively two sides of the rectangular cavity R in the first direction X, the plurality of first side walls 111 are connected to form one side of the rectangular cavity R in the second direction Y, the plurality of second side walls 112 are connected to form the other side of the rectangular cavity R in the second direction Y, and the plurality of top walls 110 are connected to form the top surface of the rectangular cavity R in the third direction Z.
[0067] Thus, the heating cavity 10 forms a rectangular accommodation space. Compared with a quartz round tube, the rectangular accommodation space matches the shape of a carrier for carrying square sheets (such as silicon wafers for preparing solar cells), with less ineffective space, which is conducive to improving the space utilization rate of the heating cavity 10.
[0068] It should be noted that the cavity wall in the above-mentioned "the heating cavity 10 includes a plurality of cavity walls" may refer to any one of the top wall 110, the first side wall 111, the second side wall 112, the third side wall 113, and the fourth side wall 114.
[0069] Figure 2 For Figure 1 the schematic cross-sectional view along line II-II. Please refer to Figure 1 and Figure 2, the heating cavity 10 further includes a first flange 12 and a second flange 13. The first flange 12 and the second flange 13 are respectively connected to two ends of the rectangular cavity R in the first direction X. The furnace door 20 can be hermetically connected to the first flange 12 and the second flange 13 through a sealing ring or the like. The third segment 11c is formed with an air extraction port H penetrating through the rectangular cavity R.
[0070] Thus, the penetrating air extraction port H of the third segment 11c allows for a quick and effective evacuation operation. After the furnace door 20 closes the opening of the rectangular cavity R, by connecting a vacuum pump through the air extraction port H, the air inside the cavity can be quickly pumped out, creating a vacuum state in the space formed by the heating cavity 10 and the furnace door 20.
[0071] In this embodiment, the third side wall 113 and the inverted U-shaped structure in the second segment 11b are integrally formed by metal casting. The first flange 12 is welded to the third side wall 113. The fourth side wall 114 and the inverted U-shaped structure in the third segment 11c can be integrally formed by metal casting. The second flange 13 is welded to the fourth side wall 114.
[0072] In other embodiments, the third side wall 113 can be connected to the inverted U-shaped structure in the second segment 11b by welding, and the fourth side wall 114 can be connected to the inverted U-shaped structure in the third segment 11c by welding. In addition, the first flange 12 can be integrally formed with the second segment 11b by metal casting, and the second flange 13 can be integrally formed with the third segment 11c by metal casting.
[0073] Figure 3 is Figure 1 A schematic cross-sectional view along line III-III. Please refer to Figure 1 and Figure 3 , the heating cavity 10 (or the rectangular cavity R) includes an inner cavity 10a, an outer cavity 10b, and a reinforcing rib 10c. The outer cavity 10b is located outside the inner cavity 10a, and the reinforcing rib 10c is located between the inner cavity 10a and the outer cavity 10b and is connected to the inner cavity 10a and the outer cavity 10b.
[0074] Thus, the reinforcing rib 10c is located between the inner cavity 10a and the outer cavity 10b. During evacuation, the reinforcing rib 10c bears the force of the atmospheric pressure and plays a supporting role, which can effectively improve the compressive resistance of the heating cavity 10 and prevent the heating cavity 10 from deforming or collapsing in a vacuum environment. Moreover, the reinforcing rib 10c is located in the sandwich space between the inner cavity 10a and the outer cavity 10b. By reasonably designing the distribution of the reinforcing rib 10c, the strength and rigidity of the heating cavity 10 can be significantly improved without adding too much weight, thereby realizing the lightweight of the structure of the heating cavity 10.
[0075] Specifically, each segment 11 includes an inner cavity body 10a, an outer cavity body 10b, and a reinforcing rib 10c. Each reinforcing rib 10c extends in a long strip shape along the length direction of the rectangular cavity R. A plurality of reinforcing ribs 10c are included in each segment 11 and are spaced apart from each other along the U-shaped structure. The top wall 110, the first side wall 111, the second side wall 112, and the reinforcing rib 10c in adjacent segments 11 are all connected by corresponding welding.
[0076] Thereby, a plurality of support structures are formed at intervals between the inner cavity body 10a and the outer cavity body 10b, which is beneficial to dispersing and transmitting the stress borne by the heating cavity 10, reducing the local stress concentration of the heating cavity 10, and further enhancing the durability of the heating cavity 10 in a vacuum state and extending the service life of the heating cavity 10. Moreover, at each segment 11, the inner cavity body 10a, the outer cavity body 10b, and the reinforcing rib 10c are connected by corresponding welding, so that a multiple sealing structure is formed at the adjacent segments 11, which is beneficial to reducing the air leakage path in the heating cavity 10 and enhancing the vacuum sealing performance of the heating cavity 10.
[0077] In addition, since the reinforcing rib 10c is located between the inner cavity body 10a and the outer cavity body 10b, rather than protruding on the surface of the inner cavity body 10a that forms a square space, the reinforcing rib 10c avoids the products (such as silicon wafers) in the square space, and can prevent the reinforcing rib 10c from directly contacting and pressing these fragile components (such as silicon wafers), thereby preventing physical damage to products such as silicon wafers.
[0078] In addition, since the reinforcing rib 10c avoids the products (such as silicon wafers and carriers) in the square space, the reinforcing rib 10c can also be prevented from directly contacting the products (such as silicon wafers) and contaminating the products, which is beneficial to ensuring the cleanliness and process quality of the products.
[0079] In some embodiments, the reinforcing rib 10c is integrally cast with the inner cavity body 10a. In other embodiments, the reinforcing rib 10c is integrally cast with the outer cavity body 10b. Thereby, by integrally casting the reinforcing rib 10c with the inner cavity body 10a or the outer cavity body 10b, it is beneficial to enhancing the structural stability of the heating cavity 10 and reducing the weaknesses caused by seams or solder joints. Moreover, from a manufacturing perspective, the integrated casting reduces the assembly steps and time and simplifies the production process.
[0080] In some embodiments, other functional structures can also be provided in the gaps between the reinforcing rib 10c, the inner cavity body 10a, and the outer cavity body 10b, so that the reinforcing rib 10c not only provides structural support, but also forms a channel or a framework with the inner cavity body 10a and the outer cavity body 10b to form a heat insulation cavity, thereby realizing a multi-functional integrated design. Specifically, the form of the heat insulation cavity can be but is not limited to the following three types.
[0081] In some embodiments, a vacuum chamber is provided between the inner cavity body 10a and the outer cavity body 10b, that is, the channel formed among the inner cavity body 10a, the outer cavity body 10b and the reinforcing rib 10c is in a vacuum state. Thereby, heat transfer from the inner cavity body 10a to the outer cavity body 10b is effectively prevented, and the influence of external heat on the temperature of the inner cavity body 10a is isolated. The vacuum chamber is particularly suitable for high-temperature processes requiring high thermal insulation, such as Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, which can significantly improve the heating efficiency and temperature control accuracy.
[0082] In other embodiments, an air chamber is provided between the inner cavity body 10a and the outer cavity body 10b, that is, the channel formed among the inner cavity body 10a, the outer cavity body 10b and the reinforcing rib 10c is filled with air. Compared with the vacuum chamber, the manufacturing and maintenance costs of the air chamber are lower and it is easier to implement.
[0083] In still other embodiments, a heat-insulating material is filled between the inner cavity body 10a and the outer cavity body 10b (or in the channel formed among the inner cavity body 10a, the outer cavity body 10b and the reinforcing rib 10c). Specifically, different heat-insulating materials, such as ceramic fiber, heat-insulating cotton, etc., can be selected according to specific process requirements to meet different temperature and environmental requirements.
[0084] Please continue to refer to Figure 3 , the heating chamber 10 further includes a cooling channel V (such as water-cooling for temperature reduction). The cooling channel V is located between the inner cavity body 10a and the outer cavity body 10b. Thereby, uniform cooling of the entire chamber can be achieved, avoiding local overheating, protecting the stability of the internal components and materials of the chamber, and preventing metal thermal deformation and scalding to users.
[0085] In some embodiments, a cooling channel V (such as water-cooling for temperature reduction) can also be provided on the side of the outer cavity body 10b facing away from the inner cavity body 10a. Thereby, the cooling effect can be further enhanced, especially in a high-temperature operating environment, ensuring that the external cavity does not overheat, preventing metal thermal deformation and scalding to users, thereby improving the overall safety and reliability of the equipment.
[0086] In some embodiments, an observation window (not shown in the figure) can also be provided on the third side wall 113. Thereby, through the observation window, the process in the heating chamber 10, such as material processing, chemical reaction, deposition, etc., can be monitored in real time, which helps to adjust the process parameters in a timely manner and improve the controllability and accuracy of the process. In addition, the operator can observe the internal condition of the chamber through the observation window, discover abnormal situations in a timely manner, and take necessary measures to avoid potential safety hazards.
[0087] In some embodiments, the heating chamber 10 further includes a spray air inlet device (not shown in the figure). The spray air inlet device is arranged around the inner sidewall of the rectangular chamber R. Since the spray air inlet device is arranged around the inner sidewall, it is beneficial to ensure that the gas is evenly distributed to each corner of the chamber, avoiding dead air flow and the phenomenon of local over-concentration or over-dilution. In addition, when the heating chamber 10 is used in a coating device (such as a PECVD device), since the spray air inlet device is arranged around the inner sidewall, it helps to improve the consistency and uniformity in the process, ensuring that the thickness and characteristics of the deposition layer are consistent.
[0088] In some embodiments, the heating chamber 10 further includes a heating element (not shown in the figure). The heating element is located on the side of the inner cavity 10a facing away from the outer cavity 10b, and / or the heating element is located on the side of the outer cavity 10b facing away from the inner cavity 10a. Specifically, the heating element can be distributed around the upper and lower, left and right, and front and back of the rectangular chamber R. The heating element can be located inside the rectangular chamber R, or outside, or both inside and outside. Thus, through the position and distribution of the heating element in the rectangular chamber R, it is beneficial to achieve a uniform temperature distribution inside the heating chamber 10. In addition, the flexible configuration of the thermal field (inside, outside, or both) enables the heating chamber 10 to adapt to a variety of different process requirements, increasing the versatility and flexibility of the heating chamber 10.
[0089] In some embodiments,
[0090] In some embodiments, the heating chamber 10 further includes a thermocouple (not shown in the figure). The thermocouple is located on the side of the inner cavity 10a facing away from the outer cavity 10b, and / or the thermocouple is located on the side of the outer cavity 10b facing away from the inner cavity 10a. Thus, through the setting of the thermocouple, the temperature inside and outside the heating chamber 10 can be monitored in real time, providing accurate temperature data to help the operator and the control system keep track of the temperature conditions inside and outside the chamber at any time, so as to prevent the temperature inside and outside the chamber from being too high or too low, ensuring that the temperature conditions in the process meet the requirements.
[0091] In some embodiments, the heating chamber 10 further includes a thermal insulation layer (not shown in the figure). The thermal insulation layer is located on the side of the outer chamber 10b facing away from the inner chamber 10a. The material of the thermal insulation layer can be, but is not limited to, thermal insulation cotton. Thereby, the heat dissipation from the inside of the chamber to the outside is effectively reduced, the stability of the internal temperature of the chamber is maintained, the temperature fluctuation is reduced, and the stability and consistency of the process are improved. In addition, the thermal insulation layer can prevent the operator from being scalded when contacting the heating chamber 10, improving the operation safety. In some embodiments, the heating chamber 10 further includes a heat insulation protection plate (not shown in the figure). The heat insulation protection plate is located on the side of the outer chamber 10b facing away from the inner chamber 10a. By providing the heat insulation protection plate, it is beneficial to improve the thermal efficiency of the heating chamber 10, maintain the stability of the internal temperature of the heating chamber 10, and prevent the operator from being scalded when contacting the equipment. Moreover, the heat insulation protection plate can also provide a certain degree of mechanical protection to prevent physical damage to the heating chamber 10 from the outside, improving the durability of the heating chamber 10.
[0092] In some embodiments, the heating chamber 10 further includes an electrode (not shown in the figure) and a radio frequency power supply (not shown in the figure) electrically connected to the electrode. The electrode and the radio frequency power supply can be arranged at the fourth side wall 114, but are not limited thereto. Thereby, the radio frequency power supply applies a high-frequency electric field in the heating chamber 10 through the electrode, ionizes gas molecules to generate plasma, and further enables the heating chamber 10 to be applied in a PECVD device for thin film deposition. It can be understood that according to different processes, the heating chamber 10 can also be equipped with other functions, not limited to the above.
[0093] In summary, the heating chamber 10 in the processing equipment 100 according to the embodiments of the present application can break through the limitations of the cavity shape and fragility of the quartz round tube, improving the production capacity. Moreover, the heating chamber 10 can be equipped with multiple functions according to different process requirements to expand the application scope of the heating chamber 10 and the processing equipment 100.
[0094] In some embodiments, the processing equipment 100 further includes a vacuum system (not shown in the figure). The vacuum system is connected to the heating chamber 10. The processing equipment can be semiconductor manufacturing equipment, such as diffusion equipment, oxidation equipment, dry cleaning equipment, PECVD equipment, cross-section passivation equipment, low pressure chemical vapor deposition (LPCVD) equipment, atomic layer deposition (ALD) equipment, etc. It can be understood that the processing equipment can also include a purification table for providing a clean environment, a gas source cabinet for storing and controlling the supply of reaction gases, etc. The gas source cabinet includes, for example, a gas panel, a water circuit, a gas circuit, etc.
[0095] The above embodiments are only used to illustrate the technical solutions of the present application and not to limit them. Although the present application has been described in detail with reference to the above preferred embodiments, those of ordinary skill in the art should understand that modifications or equivalent replacements can be made to the technical solutions of the present application without departing from the spirit and scope of the technical solutions of the present application.
Claims
1. A heating chamber for heating a silicon wafer on a carrier, characterized in that: The heating cavity includes a plurality of cavity walls, which enclose a storage space adapted to the carrier. At least part of the cavity walls are used to install a heating element for generating heat. The distance between the cavity wall for installing the heating element and the carrier is greater than or equal to 10 mm and less than or equal to 150 mm.
2. The heating chamber according to claim 1, characterized in that: The multiple cavity walls enclose a bottomless rectangular cavity; the bottomless rectangular cavity includes a plurality of segments connected in sequence, each of the segments includes a portion in an inverted U-shaped structure, the inverted U-shaped structure includes a top wall, a first side wall and a second side wall, the first side wall is opposite to and spaced from the second side wall, the top wall is connected to the first side wall and the second side wall, each of the segments is cast from metal, the top walls of adjacent segments are correspondingly welded, the first side walls of adjacent segments are correspondingly welded, and the second side walls of adjacent segments are correspondingly welded.
3. The heating chamber according to claim 2, characterized in that: Among the multiple segments, one of the segments located at both ends further includes a third side wall, the third side wall is connected to the inverted U-shaped structure of the segment to which it belongs, and forms an air extraction port that penetrates the bottomless rectangular cavity.
4. The heating chamber according to claim 2, characterized in that: The bottomless rectangular cavity comprises an inner cavity, an outer cavity and reinforcing ribs, the outer cavity is located outside the inner cavity, the reinforcing ribs are located between the inner cavity and the outer cavity, and are connected to the inner cavity and the outer cavity.
5. The heating chamber according to claim 4, characterized in that: The reinforcing rib is integrally cast with the inner cavity, or the reinforcing rib is integrally cast with the outer cavity.
6. The heating chamber according to claim 4, characterized in that: Each of the reinforcing ribs extends along the length direction of the bottomless rectangular cavity, each of the segments includes the inner cavity, the outer cavity, and a plurality of the reinforcing ribs spaced apart between the inner cavity and the outer cavity, and the inner cavity, the outer cavity, and the reinforcing ribs in adjacent segments are respectively welded and connected.
7. The heating chamber according to any one of claims 1 to 6, characterized in that: The heating cavity further comprises a spray air intake device, and the spray air intake device is arranged around the inner side wall of the heating cavity.
8. The heating chamber according to any one of claims 4 to 6, characterized in that: A vacuum chamber is provided between the inner cavity and the outer cavity; Or, an air cavity is provided between the inner cavity and the outer cavity; Alternatively, a heat insulating material is filled between the inner cavity and the outer cavity.
9. The heating chamber according to any one of claims 4 to 6, characterized in that: The heating cavity further comprises the heating element, the heating element is located on a side of the inner cavity away from the outer cavity, and / or the heating element is located on a side of the outer cavity away from the inner cavity; And / or, the heating cavity further comprises a galvanic couple, the galvanic couple is located on a side of the inner cavity facing away from the outer cavity, and / or, the galvanic couple is located on a side of the outer cavity facing away from the inner cavity; And / or, the heating cavity further comprises a cooling channel, the cooling channel is located on a side of the outer cavity away from the inner cavity, and / or, the cooling channel is located between the inner cavity and the outer cavity; And / or, the heating cavity further comprises a heat-insulating layer, and the heat-insulating layer is located on a side of the outer cavity away from the inner cavity; And / or, the heating cavity further comprises a heat insulation protection plate, and the heat insulation protection plate is located on a side of the outer cavity away from the inner cavity.
10. A processing equipment, characterized in that: include: A heating chamber as claimed in any one of claims 1 to 9; as well as A furnace door, wherein the furnace door can seal the accommodating space of the heating cavity and form a vacuum cavity with the heating cavity, wherein the air pressure of the vacuum cavity is lower than the atmospheric pressure.