Antimony doping device for monocrystalline silicon production

Abstract

The utility model provides an antimony doping device for monocrystalline silicon production, and aims to solve the technical problems of long time consumption and low efficiency in the existing antimony doping process for monocrystalline silicon production. The device comprises a chuck which can be connected to a single crystal furnace heavy hammer; one end of the connecting rod is connected with the chuck, and the other end of the connecting rod vertically extends downwards; the bottom plate is arranged at the bottom end of the connecting rod, and the plate surface of the bottom plate is perpendicular to the connecting rod; the baffle plate is annular and is arranged on the bottom plate, and the plate surface of the baffle plate is vertical to the plate surface of the bottom plate; the connecting rod is located in the middle of the baffle. A chuck is arranged to detachably connect a connecting rod to a single crystal furnace counter weight, a bottom plate and a baffle are connected through the connecting rod, the bottom plate and the baffle form a container, mother alloy (high-purity antimony) is placed in the container, a monocrystalline silicon piece is used for manufacturing the bottom plate, and antimony is doped in the bottom plate. According to the technical scheme, the duration of the antimony-doped process for producing monocrystalline silicon can be shortened, and the efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of antimony-doped monocrystalline silicon, and particularly relates to an antimony doping device for monocrystalline silicon production. Background Art

[0002] Solar energy is an ideal clean energy. Developing the photovoltaic industry is of great significance for adjusting the energy structure, promoting the transformation of energy production and consumption modes, and promoting the construction of ecological civilization. In recent years, with the continuous decline of the cost of photovoltaic power generation, the photovoltaic industry has a broader market space. Among them, monocrystalline silicon wafers are one of the core components in the photovoltaic industry. Low-cost and high-quality monocrystalline silicon wafers are the core competitiveness of monocrystalline silicon manufacturing enterprises. To further reduce costs, the industry has taken various cost reduction measures.

[0003] Currently, the production of monocrystalline silicon has begun to study antimony-doped single crystals and conduct verification on the solar cell side. Currently, the antimony doping process for monocrystalline silicon production uses the oldest doping method, that is, performing the operations of reverse shoulder release and bowl release, specifically: releasing a bowl, then cooling, then putting in the master alloy (high-purity antimony), and then performing secondary chamber purification, descent, preheating, doping, rotation, replacing the seed crystal, and then performing pre-temperature adjustment operations.

[0004] In the above operation process, there are problems of long time consumption and low doping efficiency, which seriously affect the large-scale application of antimony-doped single crystals. Especially, operations such as bowl release and cooling take a long time. Moreover, the process of operating the bowl release is difficult. It is very difficult for ordinary personnel and the main operator to master this technology, and it has very high requirements for people's ability and time. The bowl release belongs to a very inefficient operation process. Summary of the Utility Model

[0005] Aiming at the technical problems of long time consumption and low efficiency existing in the current antimony doping process for monocrystalline silicon production, the utility model provides an antimony doping device for monocrystalline silicon production, which has the advantages of improving efficiency and reducing time consumption.

[0006] The technical solution of the utility model is as follows:

[0007] An antimony doping device for monocrystalline silicon production includes:

[0008] A chuck, which can be connected to the heavy hammer of the single crystal furnace;

[0009] A connecting rod, one end of which is connected to the chuck, and the other end extends vertically downward;

[0010] A bottom plate, which is arranged at the bottom end of the connecting rod, and its plate surface is perpendicular to the connecting rod;

[0011] A baffle, which is annular and arranged on the bottom plate, and the plate surface of the baffle is perpendicular to the plate surface of the bottom plate;

[0012] Wherein, the connecting rod is located in the middle of the baffle.

[0013] Optionally, a plurality of connection ports are provided on the surface of the bottom plate, and a plurality of bumps matching all the connection ports are provided at the bottom of the baffle.

[0014] Optionally, a pin hole perpendicular to the length direction is provided at the bottom of the connecting rod, and a pin is fitted in the pin hole;

[0015] A through hole for the connecting rod to pass through is provided in the middle of the bottom plate.

[0016] Optionally, the pin hole is square, and the pin is T-shaped.

[0017] Optionally, it further includes:

[0018] A support plate, with a hollow structure in the middle, is horizontally inserted on the connecting rod and placed between the pin and the bottom plate.

[0019] Optionally, the support plate is of U-shaped structure.

[0020] Optionally, a through hole for the connecting rod to pass through is provided in the middle of the bottom plate, the bottom end of the connecting rod is provided with a thread, and a nut is fitted.

[0021] Optionally, a support plate is provided between the bottom plate and the nut, and a hole for the connecting rod to pass through is provided in the middle of the support plate.

[0022] Optionally, the bottom end of the connecting rod is of square structure, a through hole for the connecting rod to pass through is provided in the middle of the bottom plate, and the through hole is of square structure.

[0023] Optionally, a pressing plate is provided on the top of the bottom plate, and a mounting hole for the connecting rod to pass through is provided in the middle of the pressing plate.

[0024] Compared with the prior art, the beneficial effects of the present utility model are:

[0025] A chuck is provided to detachably connect the connecting rod to the heavy hammer of the single crystal furnace, and the bottom plate and the baffle are connected through the connecting rod. A container is formed by the bottom plate and the baffle. Master alloy (high-purity antimony) is placed in the container, and the bottom plate is made of single crystal silicon wafer so that antimony is doped into the bottom plate.

[0026] Through this technical solution, the duration of the antimony doping process in single crystal silicon production can be shortened, and the efficiency can be improved. Description of the Drawings

[0027] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0028] Figure 1 Schematic three-dimensional structure diagram of the present utility model;

[0029] Figure 2 Front view of the present utility model;

[0030] Figure 3 Schematic structure diagram of the connecting rod;

[0031] Figure 4 Schematic structure diagram of the bottom plate;

[0032] Figure 5 Schematic structure diagram of the baffle. Detailed implementation manners

[0033] In the following text, only some exemplary embodiments are simply described. As those skilled in the art can recognize, without departing from the spirit or scope of the present utility model, the described embodiments can be modified in various different ways. Therefore, the accompanying drawings and the description are considered to be exemplary in nature rather than restrictive.

[0034] In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the products of the present utility model are usually placed during use, or the orientation or positional relationship commonly understood by those skilled in the art. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present utility model.

[0035] The following disclosure provides many different embodiments or examples for implementing different structures of the present utility model. To simplify the disclosure of the present utility model, the components and settings of specific examples are described below. Of course, they are only examples and are not intended to limit the present utility model. In addition, the present utility model may repeat reference numerals and / or reference letters in different examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present utility model provides examples of various specific processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0036] The embodiments of the present utility model will be described in detail below with reference to the accompanying drawings.

[0037] Embodiment 1:

[0038] See Figure 1 and Figure 2 This embodiment discloses an antimony-doping device for single-crystal silicon production, including a chuck 10, a connecting rod 20, a bottom plate 30, and a baffle 40. Specifically, the top end of the chuck 10 can be connected to the weight of the single-crystal furnace, and the bottom end of the chuck 10 can be connected to one end of the connecting rod 20. The other end of the connecting rod 20 extends downward vertically inside the single-crystal furnace. Among them, the connecting rod 20 is a single-crystal silicon seed crystal.

[0039] And a bottom plate 30 is provided at the end of the connecting rod 20 far from the chuck 10. The bottom plate 30 is a silicon wafer made of single-crystal silicon. After the bottom plate 30 is installed on the connecting rod 20, the length direction of the connecting rod 20 and the plate surface of the bottom plate 30 are perpendicular to each other.

[0040] In addition, a baffle 40 is further provided on the bottom plate 30. The plate surface of the baffle 40 is perpendicular to the plate surface of the bottom plate 30. The baffle 40 is an annular structure or forms an annular structure through multiple baffles 40. The above-mentioned connecting rod 20 is located in the middle of the annular baffle 40, or the above-mentioned connecting rod 20 is located in the middle of the annular structure formed by the baffle 40.

[0041] During use, first install the device and connect it to the weight of the single-crystal furnace, then pour the master alloy (high-purity antimony) into the container formed by the bottom plate 30 and the baffle 40. Then perform the swivel operation of the secondary chamber of the single-crystal furnace to make it automatically lift. After the single-crystal furnace is in place, perform the automatic secondary chamber purification operation. After the secondary chamber purification is completed, perform the automatic lowering of the connecting rod 20 (seed crystal) and the preheating operation. After the preheating is completed, perform the automatic melting operation of the master alloy. The basic process is that when the bottom is fully preheated, slowly lower it to contact the liquid surface, melt and dope. After the lower structure is completely melted, slowly lift the connecting rod 20 (seed crystal) away from the liquid surface to prepare for temperature adjustment before crystal pulling.

[0042] In this embodiment, a chuck 10 is provided to detachably connect the connecting rod 20 to the weight of the single crystal furnace, and the bottom plate 30 and the baffle 40 are connected through the connecting rod 20. A container is formed by using the bottom plate 30 and the baffle 40. Master alloy (high-purity antimony) is placed in the container, and the bottom plate 30 is made of single crystal silicon wafers so that antimony is doped into the bottom plate 30.

[0043] Through this technical solution, the duration of the antimony doping process in single crystal silicon production can be shortened, and the efficiency can be improved.

[0044] In a preferred embodiment:

[0045] As Figure 4 shown, a plurality of connection ports 31 are provided on the plate surface of the bottom plate 30, and a plurality of bumps 41 matching all the connection ports 31 are provided at the bottom of the baffle 40. The bumps 41 on the baffle 40 are inserted into the connection ports 31 on the bottom plate 30, thereby realizing the connection between the bottom plate 30 and the baffle 40.

[0046] In another preferred embodiment:

[0047] As Figure 3 shown, a pin hole 21 is provided at the bottom of the connecting rod 20, and the extending direction of the pin hole 21 is perpendicular to the length direction of the connecting rod 20. A pin 22 is fitted in the pin hole 21, and a through hole 32 is provided in the middle of the bottom plate 30.

[0048] During use, one end of the connecting rod 20 having the pin hole 21 is passed through the through hole 32 on the bottom plate 30, and then the pin 22 is inserted into the pin hole 21, and both ends of the pin 22 are respectively located outside both ends of the pin hole 21, so that the bottom plate 30 can be installed on the connecting rod 20.

[0049] Specifically, the pin hole 21 is of a square structure, and the pin 22 is of a T-shaped structure. After the pin 22 is inserted into the pin hole 21, three ends of the pin 22 are in contact with the bottom surface of the bottom plate 30 and are used to support the bottom plate 30 to keep the plate surface of the bottom plate 30 perpendicular to the connecting rod 20.

[0050] In another preferred embodiment:

[0051] The device further includes a support plate 23. The middle of the support plate 23 is of a hollow structure, and the support plate 23 is also provided on the connecting rod 20 and is stably installed at the bottom end of the connecting rod 20 through the pin 22. By installing the support plate 23, the bottom plate 30 can be placed on the support plate 23, and then the stress area of the bottom plate 30 is increased, the pressure at a local position of the bottom plate 30 is reduced, and thus the tolerance strength of the bottom plate 30 is improved.

[0052] Preferably, the support plate 23 is in a U-shaped structure and can be inserted onto the connecting rod 20 from the notch of the support plate 23 and positioned between the bottom plate 30 and the pin 22.

[0053] Embodiment 2:

[0054] This embodiment discloses an antimony doping device for single crystal silicon production, including a chuck 10, a connecting rod 20, a bottom plate 30, and a baffle 40. The specific difference from Embodiment 1 is that: the middle of the bottom plate 30 has a through hole 32 for the connecting rod 20 to pass through, and a threaded structure (not shown in the figure) is provided at the bottom end of the connecting rod 20, and a nut (not shown in the figure) is fitted on the threaded section of the connecting rod 20.

[0055] During use, the threaded end of the connecting rod 20 is passed through the through hole 32 in the middle of the bottom plate 30, and then the bottom plate 30 is installed on the connecting rod 20 by the matching of the nut and the screw. At the same time, two nuts can be used, with the two nuts located on the top surface and the bottom surface of the bottom plate 30 respectively, so as to fix the bottom plate 30.

[0056] In this embodiment, a support plate 23 is provided between the bottom plate 30 and the nut. The middle of the support plate 23 has a hole for the connecting rod 20 to pass through. The support plate 23 can also be in a U-shaped structure, and its working principle and installation method are the same as those of the support plate 23 in Embodiment 1, and will not be elaborated here.

[0057] Embodiment 3:

[0058] As Figures 1 to 5 shown, this embodiment discloses an antimony doping device for single crystal silicon production, including a chuck 10, a connecting rod 20, a bottom plate 30, and a baffle 40. The specific difference from Embodiment 1 is that: the bottom end of the connecting rod 20 is in a square structure, and the middle of the bottom plate 30 has a through hole 32 for the connecting rod 20 to pass through, and the through hole 32 is in a square structure. Through this technical solution, it is mainly possible to prevent the bottom plate 30 from rotating on the connecting rod 20.

[0059] Embodiment 4:

[0060] This embodiment discloses an antimony doping device for single crystal silicon production, including a chuck 10, a connecting rod 20, a bottom plate 30, and a baffle 40. The specific difference from any one of Embodiment 1, Embodiment 2, and Embodiment 3 is that: a pressing plate (not shown in the figure) is provided at the top of the plate, and the middle of the pressing plate has a mounting hole for the connecting rod 20 to pass through. By providing the pressing plate, it is to fix the bottom plate 30 on the connecting rod 20.

[0061] The above-described embodiments merely represent the specific implementation manners of the present utility model. The description thereof is relatively specific and detailed, but it should not be construed as a limitation to the scope of the patent of the present utility model. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present utility model, several modifications and improvements can still be made, and these all fall within the protection scope of the present utility model.

Claims

1. An antimony doping device for producing single crystal silicon, characterized in that: include: The chuck can be connected to the single crystal furnace weight; A connecting rod, one end of which is connected to the clamping head and the other end of which extends vertically downward; A bottom plate, arranged on the bottom end of the connecting rod, with its plate surface being perpendicular to the connecting rod; The baffle is annular and arranged on the bottom plate, and the surface of the baffle is perpendicular to the surface of the bottom plate; Wherein, the connecting rod is located in the middle of the baffle.

2. The antimony doping device for producing single crystal silicon according to claim 1, characterized in that: The plate surface of the bottom plate is provided with a plurality of connection ports, and the bottom of the baffle plate is provided with a plurality of protrusions matching with all the connection ports.

3. The antimony doping device for producing single crystal silicon according to claim 1, characterized in that: The bottom of the connecting rod has a pin hole perpendicular to its length direction, and a pin is matched in the pin hole; The middle part of the bottom plate is provided with a through hole for the connecting rod to pass through.

4. The antimony doping device for producing single crystal silicon according to claim 3, characterized in that: The pin hole is square and the pin is T-shaped.

5. The antimony doping device for producing single crystal silicon according to claim 3, characterized in that: Also includes: The support plate has a hollow structure in the middle, is inserted horizontally on the connecting rod, and is placed between the pin and the bottom plate.

6. The antimony doping device for producing single crystal silicon according to claim 5, characterized in that: The support plate is a U-shaped structure.

7. The antimony doping device for producing single crystal silicon according to claim 1, characterized in that: The middle part of the bottom plate is provided with a through hole for the connecting rod to pass through, and the bottom end of the connecting rod is provided with a thread and matched with a nut.

8. The antimony doping device for producing single crystal silicon according to claim 7, characterized in that: A support plate is arranged between the bottom plate and the nut, and a hole is provided in the middle of the support plate for the connecting rod to pass through.

9. The antimony doping device for producing single crystal silicon according to claim 1, characterized in that: The bottom end of the connecting rod is a square structure, and the middle of the bottom plate is provided with a through hole for the connecting rod to pass through, and the through hole is a square structure.

10. The antimony doping device for producing single crystal silicon according to any one of claims 1 to 9, characterized in that: The top of the bottom plate is provided with a pressing plate, and the middle of the pressing plate is provided with a mounting hole for the connecting rod to pass through.

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