Semiconductor light-emitting element and light-emitting device
By setting an optical convex ring and reflecting layer in the LED chip package, the light on the side of the chip is reflected to the front, solving the problem of uneven spot spots in traditional LED chips, achieving a more uniform spot brightness and color, and reducing the complexity and production costs of the optical system.
Patent Information
- Application Number
- CN202421610416.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-09
- Publication Date
- 2025-06-27
- Estimated Expiration
- 2034-07-09
AI Technical Summary
After packaging, traditional LED chips have a large beam angle and uneven spots, which is difficult to meet the special requirements of optical systems for spot uniformity. Secondary optical design is required, resulting in increased optical system complexity and production costs.
By setting up an optical convex ring and a reflective layer, the light emitted from the side of the light emitting chip is reflected, and the light on the side of the chip is reflected to the front of the chip, increasing the light intensity of the spot area caused by the low light intensity on the side of the light emitting chip is increased, so that the brightness and color of the entire spot are more uniform.
The brightness and color uniformity of the spot are achieved, reducing the complexity requirement for optical systems, and reducing production costs.
Smart Images
Figure CN223040522U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of semiconductor devices and packaging, and particularly relates to a semiconductor light-emitting element and a light-emitting device. Background Art
[0002] Semiconductor light-emitting elements, namely light-emitting diodes (LEDs), have high conversion efficiency and are widely used in the fields of lighting, displays, automobiles, communications, etc. With the continuous progress of optical system technology, the requirements for the quality of light sources and light efficiency are also increasing day by day. Especially in the fields of lighting and display, high-efficiency and uniform spot quality are crucial for improving the user experience. After traditional LED chips are packaged, the beam angle is large and the spot is uneven, specifically, the central light intensity is high and the peripheral light intensity is low, which is difficult to directly meet the special requirements of the optical system for spot uniformity, and secondary optical design is required, resulting in increased complexity of the optical system and production cost. Summary of the Utility Model
[0003] The purpose of the utility model is to provide a semiconductor light-emitting element and a light-emitting device to solve the problems existing in the above background art.
[0004] In a first aspect, the utility model provides a semiconductor light-emitting element, which includes: a substrate, an optical convex ring, a light-emitting chip, a reflective layer, and a packaging layer; wherein, the substrate has a first surface and a second surface which are oppositely arranged; the light-emitting chip and the optical convex ring are arranged on the first surface; the optical convex ring surrounds the periphery of the light-emitting chip; and there is a gap between the optical convex ring and the light-emitting chip, and the reflective layer covers at least the first surface within the gap; the packaging layer covers the reflective layer and the light-emitting chip inside the optical convex ring; wherein, the height of the optical convex ring is greater than the thickness of the light-emitting chip.
[0005] In a second aspect, the utility model provides a light-emitting device, which includes the above semiconductor light-emitting element.
[0006] Compared with the prior art, the beneficial effects of the utility model at least include:
[0007] By arranging the optical convex ring and the reflective layer, the semiconductor light-emitting element of the utility model reflects the light emitted from the side of the light-emitting chip to the front of the chip, increasing the light intensity in the spot area caused by the low light intensity on the side of the original light-emitting chip, thereby making the brightness and color of the entire spot more uniform. Description of the Drawings
[0008] To more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the accompanying drawings required for the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and thus should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.
[0009] Figure 1 Schematic diagram of the composition structure of the existing LED package;
[0010] Figure 2 Top view of the semiconductor light-emitting element according to the first embodiment of the present utility model;
[0011] Figure 3 is Figure 2 A-A direction view of the semiconductor light-emitting element of;
[0012] Figure 4 Top view of the semiconductor light-emitting element in some embodiments of the present utility model;
[0013] Figure 5 Top view of the semiconductor light-emitting element in other embodiments of the present utility model;
[0014] Figure 6 Top view of the semiconductor light-emitting element according to the second embodiment of the present utility model;
[0015] Figure 7 is Figure 6 B-B direction view of the semiconductor light-emitting element of.
[0016] Reference numerals:
[0017] 10. Substrate; 20. Optical convex ring; 30. Light-emitting chip; 40. Reflective layer; 50. Encapsulation layer; 60. Dam; d. Spacing between the optical convex ring and the light-emitting chip Specific embodiments
[0018] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. Usually, the components of the embodiments of the present application described and shown in the accompanying drawings here can be arranged and designed in various different configurations.
[0019] Accordingly, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but merely represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts fall within the scope of protection of the present application.
[0020] As Figure 1 shown, the existing LED package includes: a bracket substrate 100, a bracket housing 200, a reflection structure 300, and an LED chip 400. The bracket housing 200 is disposed on the bracket substrate 100 and forms a bracket pit 220. The reflection structure 300 is composed of a plurality of reflection glue dots, and the plurality of reflection glue dots overflow with each other to connect and form the reflection structure 300. Therefore, the reflection surface of the reflection structure 300 is not uniform, and it is difficult to ensure the uniformity of the light spot reflected by the reflection structure 300.
[0021] Therefore, to achieve a uniform light spot, the present utility model provides a semiconductor light-emitting element, including: a substrate, an optical convex ring, a light-emitting chip, a reflection layer, and a packaging layer; wherein, the substrate has a first surface and a second surface disposed opposite to each other; the optical convex ring and the light-emitting chip are disposed on the first surface; the optical convex ring surrounds the periphery of the light-emitting chip, and there is a gap between the optical convex ring and the light-emitting chip, the reflection layer annularly covers at least the first surface within the gap, and the optical convex ring and the reflection layer can reflect the light emitted by the light-emitting chip; the packaging layer covers the reflection layer and the light-emitting chip inside the optical convex ring; wherein, the height of the optical convex ring is greater than the thickness of the light-emitting chip.
[0022] Thus, in the semiconductor light-emitting element of the present utility model, by providing an optical convex ring, the light emitted from the side of the light-emitting chip reflects the light on the side of the chip to the front of the chip, increasing the light intensity in the light spot area caused by the low light intensity on the side of the original light-emitting chip, thereby making the brightness and color of the entire light spot more uniform.
[0023] Optionally, the included angle between the inner wall of the optical convex ring and the first surface is 60° - 120°.
[0024] Optionally, the difference between the height of the optical convex ring and the thickness of the light-emitting chip is 50μm - 200μm.
[0025] Optionally, the height of the optical convex ring is 250μm - 300μm.
[0026] Optionally, the distance between the optical convex ring and the light-emitting chip is 150μm - 300μm.
[0027] Optionally, the thickness of the optical convex ring is 50μm - 150μm.
[0028] Optionally, the semiconductor light-emitting element further includes a dam, which is disposed on the first surface and is located outside the optical convex ring. The dam is separated from the optical convex ring by a predetermined distance, and the height of the dam is greater than the height of the optical convex ring.
[0029] Optionally, the encapsulation layer covers the first surface of the inner wall of the dam, the optical convex ring, and the light-emitting chip.
[0030] Optionally, the number of dams is at least one, and the number of optical convex rings is at least one. There is at least one optical convex ring inside each dam.
[0031] The present utility model further provides a light-emitting device, including the above-mentioned semiconductor light-emitting element.
[0032] The following takes the specific implementation structure of the semiconductor light-emitting element as an example for illustration:
[0033] Embodiment 1
[0034] This embodiment provides a semiconductor light-emitting element, as shown in Figure 2 and Figure 3 , including: a substrate 10, an optical convex ring 20, a light-emitting chip 30, a reflective layer 40, and an encapsulation layer 50. Among them, the substrate 10 has a first surface and a second surface disposed opposite to each other; the optical convex ring 20 and the light-emitting chip 30 are disposed on the first surface; the optical convex ring 20 surrounds the periphery of the light-emitting chip 30, and there is a gap between the optical convex ring 20 and the light-emitting chip 30. The reflective layer 40 covers at least the first surface within the gap; the optical convex ring 20 and the reflective layer 40 can reflect the light emitted by the light-emitting chip 30; the encapsulation layer 50 covers the reflective layer 40 inside the optical convex ring 20 and the light-emitting chip 30, and the height of the optical convex ring 20 is greater than the thickness of the light-emitting chip 30.
[0035] In the semiconductor light-emitting element of this embodiment, by providing the optical convex ring and the reflective layer, the light on the side of the chip is reflected by the optical convex ring and / or the reflective layer, and finally reaches the front of the chip, increasing the light intensity of the light spot area caused by the low light intensity on the side of the original light-emitting chip, so that the brightness and color of the entire light spot are more uniform.
[0036] In some embodiments of the present utility model, the optical convex ring 20 is a ring structure, and the ring structure is not limited to Figure 2 the square in, and can also be circular, oval or other shapes.
[0037] In some embodiments of the present utility model, the number of optical convex rings 20 is at least one, and the number of light-emitting chips 30 is at least one. There is at least one light-emitting chip 30 inside each optical convex ring 20.
[0038] Refer toFigure 2 and Figure 3 On the substrate, a single optical convex ring 20 is provided, and a light-emitting chip 30 is disposed inside the optical convex ring 20.
[0039] Referring to Figure 4 , on the substrate, a single optical convex ring 20 is provided, and 4 light-emitting chips 30 are disposed inside the optical convex ring 20. The number of the light-emitting chips 30 can be determined according to the required spot illuminance.
[0040] Referring to Figure 5 , 24 optical convex rings 20 are provided on the substrate, and a light-emitting chip 30 is disposed inside each optical convex ring 20. The 24 optical convex rings 20 are arranged in parallel to form an array, and the array helps the spots formed by the light beams emitted by the multiple light-emitting chips 30 to be more uniform. The number of the optical convex rings 20 forming the array can be determined according to the size of the substrate 10 and the number of the light-emitting chips 30. According to the requirement of the spot uniformity, the number and the arrangement mode of the optical convex rings 20 and the light-emitting chips 30 can be adjusted to further improve the spot uniformity.
[0041] In some embodiments of the present utility model, the included angle between the inner wall of the optical convex ring and the first surface is 60° to 120°. By limiting the included angle between the inner wall of the optical convex ring and the first surface, the design requirement of emitting light at a predetermined angle can be met. By adjusting the included angle between the inner wall of the optical convex ring and the first surface, the emission angle of the light beam and the spot uniformity can be changed.
[0042] In some embodiments of the present utility model, the reflectivity of the optical convex ring 20 is greater than 90%. In order to improve the reflectivity of the optical convex ring 20, the material of the optical convex ring 20 includes titanium dioxide or a mixture of silicon dioxide and silica gel. The optical convex ring 20 can also be made of other materials with a reflectivity greater than 90%.
[0043] In some embodiments of the present utility model, the difference between the height of the optical convex ring 20 and the thickness of the light-emitting chip 30 is 50 μm to 200 μm.
[0044] In some embodiments of the present utility model, the height of the optical convex ring 20 is 250 μm to 300 μm.
[0045] If the height of the optical convex ring 20 is lower than 250 μm, the light emitted from the side of the light-emitting chip 30 is directly emitted without passing through the optical convex ring 20, which will cause a weak spot caused by the low light intensity on the side of the light-emitting chip, and a spot with high central light intensity and uneven light intensity around the periphery is obtained, thereby making the entire spot brightness and color uneven. If the height of the optical convex ring 20 is higher than 300 μm, the light emitted by the light-emitting chip 30 is blocked by the optical convex ring 20, affecting the light output efficiency.
[0046] In some embodiments of the present utility model, referring toFigure 5 The distance d between the optical convex ring 20 and the light-emitting chip 30 is 150 μm to 300 μm.
[0047] If the distance d between the optical convex ring 20 and the light-emitting chip 30 is less than 150 μm, the light emitted by the light-emitting chip 30 is blocked by the optical convex ring 20, affecting the light extraction efficiency. If the distance d between the optical convex ring 20 and the light-emitting chip 30 is greater than 300 μm, the light emitted from the side of the light-emitting chip 30 is not easily transmitted to the optical convex ring 20, affecting the light extraction efficiency of the side of the light-emitting chip 30.
[0048] In some embodiments of the present invention, the thickness of the optical convex ring 20 is 50 μm to 150 μm.
[0049] The thickness of the optical convex ring 20 is determined according to the actually installed substrate 10, light-emitting chip 30 and the covered area of the dam.
[0050] It should be noted that the height, thickness of the optical convex ring 20 and the distance from the light-emitting chip 30 are only exemplary. The present application does not specifically limit the height, thickness of the optical convex ring 20 and the distance from the light-emitting chip 30. As long as it can achieve the condition of not affecting the light extraction efficiency of the top and side surfaces of the light-emitting chip, the height, thickness of the optical convex ring 20 and the distance from the light-emitting chip 30 that can reduce the occurrence of glue cracking in the encapsulation layer 50 all fall within the scope of the present application.
[0051] In some embodiments of the present invention, the substrate 10 includes a ceramic substrate, a silicon substrate or a metal substrate.
[0052] In some embodiments of the present invention, the material of the encapsulation layer 50 includes silica gel. In one embodiment, the encapsulation layer 50 covers the inner wall of the optical convex ring, making the structure of the optical convex ring 20 stable, and the optical medium between the light-emitting chip 30 and the optical convex ring 20 uniform and the same, improving the uniformity of the light spot.
[0053] In some embodiments of the present invention, the reflectivity of the reflective layer 40 is greater than 90%. The reflective layer 40 includes a metal reflective layer, or a mixture of a material with light reflectivity or light scattering property and silica gel. The material of the metal reflective layer includes Ag, Al, Au or AlAg alloy. If a metal reflective layer is used, a metal protective layer can be provided on the metal reflective layer to prevent the metal reflective layer from being oxidized. In a specific embodiment, the metal protective layer can be selected as Pt. The materials with light reflectivity or light scattering property include titanium dioxide, silicon dioxide, zinc oxide, aluminum oxide, zirconium dioxide or barium sulfate.
[0054] Embodiment 2
[0055] This embodiment is used to further illustrate the semiconductor light-emitting element of the present invention. Refer toFigure 6 and Figure 7 , the features that are the same as those in the first embodiment will not be described in detail herein, and only the differences will be described in detail. The difference between this embodiment and the first embodiment is that it further includes a dam 60, the dam 60 is disposed on the first surface, and the dam 60 is located outside the optical convex ring 20, and the dam 60 is separated from the optical convex ring 20 by a predetermined distance, wherein the height of the dam 60 is greater than the height of the optical convex ring 20.
[0056] Since the height of the dam 60 is greater than the height of the optical convex ring 20, the light extraction efficiency is reduced. Since the thickness of the encapsulation layer 50 is similar to the height of the dam 60, an increase in the height of the dam 60 will cause an increase in the thickness of the encapsulation layer 50, and the encapsulation layer 50 will accumulate more heat, reducing the reliability of the product.
[0057] In some embodiments of the present invention, the encapsulation layer 50 covers the first surface of the inner wall of the dam and the light-emitting chips 30 and the optical convex rings 20, so that the optical medium between the plurality of light-emitting chips 30 and between the light-emitting chips 30 and the inner wall of the dam is uniform and the same.
[0058] In some embodiments of the present invention, the number of dams 60 is at least one, the number of optical convex rings 20 is at least one, and there is at least one optical convex ring 20 inside each dam 60. Referring to Figure 6 , a single dam 60 is disposed on the substrate, 24 optical convex rings 20 are disposed inside the dam 60, and 1 light-emitting chip 30 is disposed inside each optical convex ring 20. The dams 60 can be arranged regularly or irregularly, and the optical convex rings 20 located inside the dams 60 can also be arranged regularly or irregularly. For example, a plurality of dams 60 are arranged in parallel to form an array, and the optical convex rings 20 located inside the dams 60 are also arranged in parallel to form an array. The multiple arrays help the light spots formed by the light beams emitted by the plurality of light-emitting chips 30 located inside the optical convex rings 20 inside the dams 60 to be more uniform. The number of dams 60 forming the array can be determined according to the size of the substrate 10, the number of light-emitting chips 30, and the number of optical convex rings 20 that can be accommodated. According to the requirement of the uniformity of the light spot, the number and arrangement of the dams 60, the optical convex rings 20, and the light-emitting chips 30 can be adjusted to further improve the uniformity of the light spot.
[0059] The above are only the preferred embodiments of the present application and are not used to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A semiconductor light emitting element, characterized in that: include: A substrate, an optical convex ring, a light-emitting chip, a reflective layer, and a packaging layer; wherein the substrate has a first surface and a second surface arranged opposite to each other; the optical convex ring and the light-emitting chip are arranged on the first surface; the optical convex ring surrounds the light-emitting chip, and there is a gap between the optical convex ring and the light-emitting chip, and the reflective layer covers at least the first surface within the gap; the packaging layer covers the reflective layer and the light-emitting chip inside the optical convex ring; wherein the height of the optical convex ring is greater than the thickness of the light-emitting chip.
2. The semiconductor light emitting element according to claim 1, characterized in that The included angle between the inner wall of the optical convex ring and the first surface is 60° to 120°.
3. The semiconductor light emitting element according to claim 1, characterized in that The difference between the height of the optical convex ring and the thickness of the light emitting chip is 50 μm to 200 μm.
4. The semiconductor light emitting element according to claim 1, characterized in that The height of the optical convex ring is 250 μm to 300 μm.
5. The semiconductor light emitting element according to claim 1, characterized in that The distance between the optical convex ring and the light emitting chip is 150 μm to 300 μm.
6. The semiconductor light emitting element according to claim 1, characterized in that The thickness of the optical convex ring is 50 μm to 150 μm.
7. The semiconductor light emitting element according to claim 1, wherein: The semiconductor light emitting element further includes a dam, which is disposed on the first surface and located outside the optical convex ring. The dam is separated from the optical convex ring by a predetermined distance, wherein a height of the dam is greater than a height of the optical convex ring.
8. The semiconductor light emitting element according to claim 7, characterized in that The packaging layer covers the first surface within the dam, the optical convex ring and the light-emitting chip.
9. The semiconductor light emitting element according to claim 7, characterized in that: The number of the dam is at least one, the number of the optical convex ring is at least one, and there is at least one optical convex ring on the inner side of each dam.
10. A light emitting device, characterized in that: It comprises the semiconductor light emitting element as described in any one of claims 1 to 9.