Rotation and revolution magnetic control plasma polishing equipment
Through the male-rotation magnetron plasma polishing equipment, the combination of plasma and magnetic field is used to solve the problems of high cost and low efficiency of wafer polishing in the prior art, and achieves high efficiency and low cost polishing effect and higher product quality.
Patent Information
- Application Number
- CN202422030205.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-21
- Publication Date
- 2025-07-01
- Estimated Expiration
- 2034-08-21
AI Technical Summary
The existing wafer polishing methods have problems such as high cost, low polishing efficiency and difficult to improve product quality. They are mainly due to the limited polishing effect caused by frequent replacement of polishing velvet consumables and the high density of polishing liquid.
Male rotation magnetron plasma polishing equipment is adopted. This equipment drives the carrier disk and magnet disk through the male rotation shaft and the self-rotation shaft, and uses the combination of plasma and magnetic field to achieve contactless efficient polishing.
Improves polishing efficiency and product quality, reduces costs, and can further remove damaged layers on the wafer surface, improving device yield and output.
Smart Images
Figure CN223044215U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of polishing equipment, and particularly relates to a planetary-rotary magnetron plasma polishing equipment. Background Technique
[0002] The semiconductor industry is the core of the modern electronics industry. At present, more than 90% of semiconductor devices and circuits, especially very large scale integrated circuits, are fabricated on high-purity high-quality single crystal polishing wafers and epitaxial wafers. Therefore, it is particularly important to obtain wafers with extremely small surface micro-defects and high flatness in the wafer manufacturing process.
[0003] In the existing wafer polishing devices, most of them use polishing flannel to polish the surface of the wafer.
[0004] The existing wafer polishing method has at least the following defects:
[0005] 1. During the polishing process, it is necessary to inject abrasive polishing liquid or water, and it is also necessary to control the rotation of the polishing flannel. The polishing flannel is a consumable and needs to be replaced regularly, resulting in a relatively high overall cost;
[0006] 2. The polishing hairs on the polishing flannel are relatively thick, and the density of the injected abrasive polishing liquid or water is relatively large, making it difficult for the polishing hairs, abrasive polishing liquid or water to penetrate into the damage layer left by the slicing / grinding step, resulting in a limited polishing effect that can be achieved ultimately, and it is difficult to improve the product quality and yield. Content of the Utility Model
[0007] The purpose of the utility model is to provide a planetary-rotary magnetron plasma polishing equipment, which can be applied to the polishing of devices in multiple fields, and has high polishing efficiency and good quality.
[0008] The embodiments of the utility model are implemented as follows:
[0009] The utility model provides a planetary-rotary magnetron plasma polishing equipment, which includes a planetary rotation shaft, a planetary turntable, a carrier plate and a magnet disk;
[0010] The carrier plate is used to place the device to be polished, and a plurality of carrier plates are rotatably installed on the planetary turntable;
[0011] The planetary rotation shaft is arranged at the central position of the planetary turntable to drive the planetary turntable to rotate, and a plurality of carrier plates revolve around the central position of the planetary turntable;
[0012] A magnet disk is arranged below each carrier plate, and the magnet disk is used to generate a magnetic field to increase the number of collisions of the plasma used for polishing on the surface of the device to be polished.
[0013] In an optional embodiment, the planetary-rotary magnetron plasma polishing equipment further includes a self-rotation shaft, a friction driving wheel and a friction driven wheel;
[0014] The friction driving wheel, the friction driven wheel and the carrier plate are engaged in sequence;
[0015] The self-rotating shaft is arranged at the central position of the friction driving wheel to drive the friction driving wheel to rotate, so as to make the carrier plate rotate self.
[0016] In an alternative embodiment, the planetary-rotary magnetron plasma polishing device further includes a cathode and an anode. The cathode is arranged below the carrier plate, and the anode is arranged above the carrier plate. An electric field is formed between the cathode and the anode, and etching gas is formed into plasma within the electric field.
[0017] In an alternative embodiment, the public rotation shaft and the self-rotating shaft are located on the same vertical line, and a plurality of carrier plates are arranged at equal intervals around the central position of the public rotation disk.
[0018] In an alternative embodiment, at least three friction driven wheels are arranged at equal intervals on the outer periphery of each carrier plate, and the carrier plate is supported on at least three friction driven wheels.
[0019] In an alternative embodiment, the vertical cross-section of the friction driven wheel is of ⊥ type or + type, and the edge of the carrier plate is arranged in the notch at the upper part of the friction driven wheel.
[0020] In an alternative embodiment, the magnet disk includes a support disk and magnets. The magnets are arranged within the support disk, and the magnets include N poles and S poles which are arranged alternately at intervals.
[0021] In an alternative embodiment, a plurality of grooves are arranged at intervals on the top surface of the support disk. Magnets of the same polarity are loaded into each groove, and the magnets loaded into adjacent two grooves have different polarities.
[0022] In an alternative embodiment, the groove is one or a combination of a ring shape, a straight shape, a wavy shape, etc.
[0023] In an alternative embodiment, the planetary-rotary magnetron plasma polishing device further includes a vacuum chamber and an air inlet pipe. The air inlet pipe is arranged at the top of the vacuum chamber and is used for inputting etching gas into the vacuum chamber;
[0024] The public rotation disk, the carrier plate and the magnet disk are all arranged within the vacuum chamber.
[0025] The beneficial effects of the planetary-rotary magnetron plasma polishing device provided by the embodiment of the present utility model include:
[0026] 1. The plasma polishing adopted by this device is non-contact. No physical pressure is applied to the device to be polished during the whole process. When applied to wafer polishing, it can actually improve the damage of the subsurface of the wafer. Moreover, the etching gas used has a lower density than the polishing slurry, enabling the plasma to penetrate more deeply into the damage layer left by the wafer during the slicing or grinding step. The plasma physically removes the materials attached to the surface and subsurface of the wafer in the form of weak chemical bonds. In this way, the chemical bonds of the remaining materials are stronger, so the quality is higher, which helps to obtain a higher device yield and increase the production.
[0027] 2. The magnet disk forms a magnetic field, causing the plasma to be affected by the magnetic force, and the magnetic force is perpendicular to the current movement direction of the plasma. In this way, the magnetic force will guide the plasma to change from the original linear movement to a curved movement, increasing the movement path of the plasma on the surface of the device to be polished and significantly increasing the number of times the plasma impacts the device to be polished, thus improving the polishing speed during polishing.
[0028] 3. Multiple carrier disks can simultaneously perform plasma polishing on multiple devices to be polished (such as wafers), with high polishing efficiency. Moreover, both the carrier disks and the devices to be polished have both revolution and rotation, which can not only increase the number of collisions between the devices to be polished and the plasma, but also enable the surfaces of the devices to be polished to uniformly and comprehensively receive plasma polishing treatment. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required in the embodiments. It should be understood that the following drawings only show some embodiments of the present invention, so they should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.
[0030] Figure 1 FIG. 1 is a schematic structural diagram of the planetary and rotational magnetic control plasma polishing equipment provided by the embodiment of the present invention;
[0031] Figure 2 FIG. 2 is a schematic structural diagram of the carrier disk and its related components;
[0032] Figure 3 FIG. 3 is a schematic diagram of the principle of plasma polishing the device to be polished;
[0033] Figure 4 FIG. 4 is a schematic structural diagram of one kind of magnet disk;
[0034] Figure 5 FIG. 5 is a schematic structural diagram of another kind of magnet disk.
[0035] Icon: 1 - Vacuum chamber; 2 - Common rotating shaft; 3 - Common turntable; 4 - Carrier plate; 5 - Device to be polished; 6 - Magnet disk; 61 - Support disk; 62 - Groove; 63 - N pole; 64 - S pole; 7 - Self - rotating shaft; 8 - Friction driving wheel; 9 - Friction driven wheel; 10 - Plasma; 11 - Magnetic field; 12 - Cathode; 13 - Anode. Detailed implementation manners
[0036] To make the objectives, technical solutions and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are some, but not all, of the embodiments of the present utility model. Usually, the components of the embodiments of the present utility model described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.
[0037] Therefore, the following detailed description of the embodiments of the present utility model provided in the drawings is not intended to limit the scope of the claimed present utility model, but merely represents selected embodiments of the present utility model. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts fall within the scope of protection of the present utility model.
[0038] It should be noted that: Similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.
[0039] In the description of the present utility model, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the utility model product is usually placed during use. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present utility model. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and cannot be understood as indicating or implying relative importance.
[0040] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.
[0041] In the description of the present utility model, it should also be noted that unless otherwise clearly specified and defined, the terms "arrangement", "installation", "connection", and "coupling" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.
[0042] Please refer to Figures 1 to 3 , this embodiment provides a planetary and rotational magnetron plasma polishing apparatus (hereinafter referred to as: apparatus). The apparatus includes a vacuum chamber 1, an inlet pipe (not shown in the figure), a planetary shaft 2, a planetary turntable 3, a carrier plate 4, a magnet disk 6, a rotational shaft 7, a friction driving wheel 8, a friction driven wheel 9, a cathode 12, and an anode 13. Among them, the planetary turntable 3, the carrier plate 4, the magnet disk 6, the rotational shaft 7, the friction driving wheel 8, the friction driven wheel 9, the cathode 12, and the anode 13 are all arranged in the vacuum chamber 1.
[0043] The inlet pipe is arranged at the top of the vacuum chamber 1 and is used to input etching gas into the vacuum chamber 1. The etching gas can be gases such as Ar, O2, CF4, etc., and a plasma 10 is formed in the electric field formed between the cathode 12 and the anode 13. In other embodiments, an ionization device for generating the plasma 10 can also be connected outside the vacuum chamber 1, and then the plasma 10 is input into the vacuum chamber 1.
[0044] An exhaust pipe (not shown in the figure) can also be arranged at the bottom of the vacuum chamber 1. In this way, the top wall of the vacuum chamber 1 intakes gas and the bottom wall discharges gas, so as to keep the plasma 10 replenished in the vacuum chamber 1 in time and maintain the efficient polishing of the device to be polished 5.
[0045] The carrier plate 4 is used to place the device to be polished 5. In this embodiment, the device to be polished 5 can be a wafer in the crystal growth field. Of course, it can also be a substrate in the semiconductor packaging field, a glass substrate in an integrated circuit, a precision device in the machining field, etc. The plasma polishing adopted by this apparatus belongs to non-contact type. No physical pressure is applied to the device to be polished 5 during the whole process. When applied to wafer polishing, it can actually improve the damage on the subsurface of the wafer. Moreover, the density of the etching gas adopted is lower than that of the grinding polishing liquid, so that the plasma 10 can penetrate more deeply into the damage layer left by the wafer in the slicing or grinding step. The plasma 10 physically removes the materials attached to the surface and subsurface of the wafer in the form of weak chemical bonds. In this way, the chemical bonds of the remaining materials are stronger, so the quality is higher, which helps to obtain a higher device yield and increase the production.
[0046] A plurality of carrier plates 4 are rotatably mounted on a common turntable 3, and plasma polishing treatment can be simultaneously performed on a plurality of devices to be polished 5 (such as wafers), with high polishing efficiency. Preferably, the plurality of carrier plates 4 are evenly spaced around the central position of the common turntable 3 to ensure that the devices to be polished 5 in each carrier plate 4 are evenly polished by the plasma 10.
[0047] The common rotating shaft 2 is arranged at the central position of the common turntable 3 to drive the common turntable 3 to rotate, and the plurality of carrier plates 4 revolve around the central position of the common turntable 3. The friction driving wheel 8, the friction driven wheel 9 and the carrier plate 4 are engaged in sequence. The common rotating shaft 2 and the self-rotating shaft 7 are located on the same vertical line, and the self-rotating shaft 7 is arranged at the central position of the friction driving wheel 8 to drive the friction driving wheel 8 to rotate, so that the carrier plate 4 rotates. The carrier plate 4 and the device to be polished 5 have both revolution and rotation at the same time, which can not only increase the number of collisions between the device to be polished 5 and the plasma 10, but also enable the surface of the device to be polished 5 to be evenly and comprehensively polished by the plasma 10.
[0048] Specifically, at least three friction driven wheels 9 are evenly spaced on the outer periphery of each carrier plate 4, and the carrier plate 4 is supported on at least three friction driven wheels 9. The vertical cross-section of the friction driven wheel 9 is ⊥-shaped or cross-shaped, and the edge of the carrier plate 4 is arranged in the notch at the upper part of the friction driven wheel 9. In this embodiment, three friction driven wheels 9 are evenly spaced on the outer periphery of each carrier plate 4. Among them, one friction driven wheel 9 is arranged between the carrier plate 4 and the friction driving wheel 8. The two friction driven wheels 9 do not need to be engaged with the friction driving wheel 8, but only play a role in stably supporting the carrier plate 4. Among them, the common rotating shaft 2 and the self-rotating shaft 7 can be driven by a motor and a transmission mechanism respectively, and the transmission mechanism can be a belt transmission mechanism or a friction transmission mechanism.
[0049] A magnet disk 6 is arranged below each carrier plate 4. The magnet disk 6 is used to generate a magnetic field 11 to make the plasma 10 receive a magnetic force, and the magnetic force is perpendicular to the current movement direction of the plasma 10. In this way, the magnetic force will guide the plasma 10 to change from the original linear motion to a curved motion, so that the movement path of the plasma 10 on the surface of the device to be polished 5 is increased, and the number of times the plasma 10 impacts the device to be polished 5 can be greatly increased, and the polishing speed during polishing can be improved.
[0050] Specifically, the anode 13, the carrier plate 4, the magnet disk 6, the common turntable 3 and the cathode 12 are arranged from top to bottom in sequence. The anode 13 and the cathode 12 can be circular rings around the common rotating shaft 2 and are respectively fixedly installed inside the vacuum chamber 1 without rotating with the common turntable 3 and the carrier plate 4.
[0051] Please refer to Figures 3 to 5, the magnet disk 6 includes a support disk 61 and magnets. The magnets are arranged within the support disk 61, and the magnets include N poles 63 and S poles 64 that are alternately arranged at intervals. The magnets form a magnetic field 11, causing the plasma 10 to be subject to a magnetic force. Among them, the magnets include N poles 63 and S poles 64 that are alternately arranged at intervals. The positive ions in the plasma 10 will move from the N pole 63 to the adjacent S pole 64, and then move to the next N pole 63.
[0052] Under the action of the electric field formed by the anode 13 and the cathode 12, the etching gas forms a plasma 10 (in this embodiment, the plasma 10 generated by the etching gas is positive ions), which is subject to a vertically downward electric force, that is, most of the plasma 10 moves from top to bottom to the surface of the device to be polished 5 (as Figure 3 shown by the arrow A in the figure). In the area where the plasma 10 is close to the magnet disk 6, the plasma 10 is subject to a magnetic force F, and the direction of the magnetic force is perpendicular to the current movement direction of the plasma 10. At the same time, the direction of the magnetic force changes with the arrangement shape of the magnets and the position of the plasma 10. In this way, the magnetic force will guide the plasma 10 to change from the original linear motion to a curved motion. During actual use, the direction of the magnetic force F is basically horizontal, which can guide the plasma 10 to present a wavy motion trajectory on the surface of the device to be polished 5, increasing the movement path of the positive ions and the number of collisions between the plasma 10 and the surface of the device to be polished 5, and significantly improving the polishing speed during polishing.
[0053] When the plasma 10 collides with the surface of the device to be polished 5, the atoms and secondary electrons on the surface of the device to be polished 5 are broken down, achieving the effect of high-quality polishing of the surface of the device to be polished 5; moreover, there is no need to inject abrasive polishing liquid or water, nor consumables that need to be moved or frequently replaced. Therefore, the cost is low. Plasma 10 polishing also belongs to non-contact type. No physical pressure is applied to the device to be polished 5 during the whole process. In fact, it can also improve the subsurface damage of the device to be polished 5, and the plasma 10 can penetrate more deeply into the damage layer left by the device to be polished 5 during the slicing or grinding step. The plasma 10 physically removes the materials attached to the surface and subsurface of the device to be polished 5 in the form of weak chemical bonds. In this way, the chemical bonds of the remaining materials are stronger, so the quality is higher, which helps to obtain a higher device yield and increase the production.
[0054] Please refer to Figure 4 , a plurality of grooves 62 arranged at intervals are formed on the top surface of the support disk 61. Magnets of the same polarity are installed in each groove 62, and the magnets installed in adjacent two grooves 62 have different polarities. The magnets installed in each groove 62 include a plurality of cylindrical magnet particles arranged in sequence within the groove 62. In this way, the magnets in each groove 62 are formed by splicing a plurality of cylindrical magnet particles, which not only enables the magnets to adapt to any form of groove 62, but also is convenient for disassembly and assembly.
[0055] The groove 62 is one or a combination of a ring shape, a straight shape, and a wavy shape. In this way, different forms of the groove 62 can form different forms of electric fields, and then form different forms of movement paths of the plasma 10. The form of the groove 62 with an appropriate length of the movement path of the plasma 10 and an appropriate number of collisions with the device 5 to be polished can be selected.
[0056] As Figure 4 shown, the groove 62 is in a ring shape, and a plurality of grooves 62 are filled with N poles 63 and S poles 64 in sequence from the outside to the inside. As Figure 5 shown, the groove 62 is in a straight shape, a plurality of grooves 62 are arranged in parallel at intervals, and a plurality of grooves 62 are filled with N poles 63 and S poles 64 in sequence.
[0057] The beneficial effects of the planetary and rotational magnetic control plasma polishing equipment provided by the embodiments of the present utility model include:
[0058] 1. The plasma 10 polishing adopted by this equipment is non-contact, and no physical pressure is applied to the device 5 to be polished during the whole process. When applied to wafer polishing, it can actually improve the subsurface damage of the wafer. Moreover, the etching gas adopted has a lower density than the polishing slurry, enabling the plasma 10 to penetrate more deeply into the damage layer left by the wafer during the slicing or grinding step. The plasma 10 physically removes the materials attached to the surface and subsurface of the wafer in the form of weak chemical bonds. In this way, the chemical bonds of the remaining materials are stronger, so the quality is higher, which helps to obtain a higher device yield and increase the production.
[0059] 2. The magnet disk 6 forms a magnetic field 11, so that the plasma 10 is subjected to a magnetic force, and the magnetic force is perpendicular to the current movement direction of the plasma 10. In this way, the magnetic force will guide the plasma 10 to change from the original straight-line movement to a curved movement, increasing the movement path of the plasma 10 on the surface of the device 5 to be polished, and increasing the number of times the plasma 10 impacts the device 5 to be polished, which can greatly improve the polishing speed during polishing.
[0060] 3. A plurality of carrier disks 4 can simultaneously perform plasma 10 polishing on a plurality of devices 5 to be polished (such as wafers), with high polishing efficiency. Moreover, both the carrier disk 4 and the device 5 to be polished have revolution and rotation at the same time, which can not only increase the number of collisions between the device 5 to be polished and the plasma 10, but also enable the surface of the device 5 to be polished to uniformly and comprehensively receive plasma 10 polishing treatment.
[0061] 4. This equipment has a wide range of applications and can be applied to fields such as semiconductor manufacturing, optical components, medical devices, and aerospace. It has the characteristics of high efficiency, high quality, low damage, and environmental friendliness.
[0062] 5. The device can also be used as a cleaning device, for example, for cleaning wafers in the semiconductor manufacturing process. It can effectively remove metal ions and other contaminants on the wafer surface, and can quickly and thoroughly remove residual photoresist, particles, contaminants, and other useless materials. In semiconductor manufacturing, metal ion contamination is a serious problem because it can cause circuit short circuits or performance degradation. Plasma bombardment decomposes gas molecules into charged particles and free radicals. These high-energy particles then react with the contaminants on the wafer surface, converting them into volatile substances, thereby removing the contaminants. The residual metal ions and contaminants on the cleaned wafer surface are effectively removed, ensuring the smooth progress of subsequent processes. The advantages of plasma bombardment in removing metal ions lie in its high efficiency, rapidity, and thoroughness. Compared with traditional wet cleaning, plasma bombardment does not require the introduction of chemical substances, thus reducing the risk of corrosion and damage to the wafer material. In addition, since plasma bombardment is a dry cleaning method, its process is relatively simple and takes less time, which helps to improve the yield of chips.
[0063] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.
Claims
1. A revolving magnetron plasma polishing device, characterized in that: The revolving and self-rotating magnetron plasma polishing device comprises a revolving shaft (2), a revolving disk (3), a carrier disk (4) and a magnet disk (6); The carrier plate (4) is used to place the device (5) to be polished, and a plurality of the carrier plates (4) are rotatably mounted on the revolution plate (3); The revolution axis (2) is arranged at the center position of the revolution disk (3) to drive the revolution disk (3) to rotate, and the plurality of carrier disks (4) revolve around the center position of the revolution disk (3); The magnet disk (6) is arranged below each carrier disk (4), and the magnet disk (6) is used to generate a magnetic field (11) so as to increase the number of collisions of the plasma (10) used for polishing with the surface of the device to be polished (5).
2. The revolving and rotating magnetron plasma polishing equipment according to claim 1, characterized in that: The revolving and self-rotating magnetron plasma polishing device further comprises a self-rotating shaft (7), a friction driving wheel (8) and a friction driven wheel (9); The friction driving wheel (8), the friction driven wheel (9) and the carrier plate (4) are meshed in sequence; The rotation shaft (7) is arranged at the center position of the friction driving wheel (8) to drive the friction driving wheel (8) to rotate, thereby causing the carrier plate (4) to rotate.
3. The revolving and rotating magnetron plasma polishing equipment according to claim 2, characterized in that: The revolving magnetron plasma polishing device also includes a cathode (12) and an anode (13), wherein the cathode (12) is arranged below the carrier (4), and the anode (13) is arranged above the carrier (4), and an electric field is formed between the cathode (12) and the anode (13), and the etching gas is formed into plasma (10) in the electric field.
4. The revolving and rotating magnetron plasma polishing equipment according to claim 3, characterized in that: The revolution axis (2) and the rotation axis (7) are located on the same vertical line, and a plurality of carrier plates (4) are evenly spaced around the center of the revolution plate (3).
5. The revolving and rotating magnetron plasma polishing equipment according to claim 2, characterized in that: At least three friction passive wheels (9) are evenly spaced on the outer periphery of each carrier (4), and the carrier (4) is supported on at least three friction passive wheels (9).
6. The revolving and rotating magnetron plasma polishing equipment according to claim 5, characterized in that: The vertical cross section of the friction passive wheel (9) is ⊥-shaped or X-shaped, and the edge of the carrier plate (4) is arranged in a notch on the upper part of the friction passive wheel (9).
7. The revolving and rotating magnetron plasma polishing equipment according to claim 1, characterized in that: The magnet disk (6) comprises a support disk (61) and a magnet. The magnet is arranged in the support disk (61), and the magnet comprises N poles (63) and S poles (64) which are alternately arranged at intervals.
8. The revolving and rotating magnetron plasma polishing equipment according to claim 7, characterized in that: A plurality of grooves (62) arranged at intervals are provided on the top surface of the support plate (61), each groove (62) is filled with magnets of the same polarity, and the magnets filled in two adjacent grooves (62) have different polarities.
9. The revolving and rotating magnetron plasma polishing equipment according to claim 8, characterized in that: The groove (62) is in the shape of a ring, a straight line, a wave, or a combination of one or more of the shapes.
10. The revolving and rotating magnetron plasma polishing equipment according to claim 1, characterized in that: The revolving magnetron plasma polishing device further comprises a vacuum chamber (1) and an air inlet pipe, wherein the air inlet pipe is arranged at the top of the vacuum chamber (1) and is used to input etching gas into the vacuum chamber (1); The revolution disk (3), the carrier disk (4) and the magnet disk (6) are all arranged in the vacuum chamber (1).