Bonding apparatus

Abstract

A bonding apparatus includes a bonding head having a vacuum channel and a switchable channel. The bonding apparatus may include a vacuum pump, a blower, a controller communicatively coupled with the vacuum pump and the blower, and a bonding head. The joint head may include a body, a first vacuum channel in the body connected to a vacuum pump, and a first switchable channel in the body connected to the vacuum pump and a blower.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a bonding device. Background Art

[0002] Due to the continuous increase in the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, etc.), the semiconductor industry has experienced rapid growth. To a large extent, the increase in integration density is due to the iterative reduction of the minimum feature size, which allows more components to be integrated into a given area. With the growing demand for shrinking electronic devices, there has also emerged a need for smaller and more innovative semiconductor die packaging technologies. Summary of the Utility Model

[0003] The purpose of the present disclosure is to propose a bonding device to solve at least one of the above problems.

[0004] Some embodiments of the present disclosure provide a bonding device. The bonding device includes a vacuum pump, a blower, a controller communicatively coupled to the vacuum pump and the blower, and a bonding head. The bonding head includes a body, a first vacuum channel located in the body, and a first switchable channel located in the body, wherein the first vacuum channel is connected to the vacuum pump, and the first switchable channel is connected to the vacuum pump and the blower.

[0005] According to one embodiment of the present disclosure, the first vacuum channel has a circular opening in a bottom view, the circular opening of the first vacuum channel has a first diameter, and the first switchable channel has a circular opening in the bottom view, the circular opening of the first switchable channel has a second diameter, and wherein the first diameter is greater than or equal to the second diameter.

[0006] According to one embodiment of the present disclosure, in a bottom view, the first switchable channel is located between a first edge of the body and the first vacuum channel.

[0007] According to one embodiment of the present disclosure, it further includes a second switchable channel located in the body and a protrusion located on a bottom surface of the body, wherein the protrusion is disposed in a central region of the bottom surface of the body, wherein the protrusion is located between the second switchable channel and the first vacuum channel in a bottom view, and wherein the second switchable channel is connected to the vacuum pump and the blower.

[0008] According to one embodiment of the present disclosure, it further includes a second vacuum channel located in the body, wherein the second vacuum channel is located between the second switchable channel and the protrusion in a bottom view, and wherein the second vacuum channel is connected to the vacuum pump.

[0009] According to one embodiment of the present disclosure, the body has a first width, wherein the first vacuum channel is spaced apart from the second vacuum channel by a second width, and wherein the second width is greater than or equal to half of the first width.

[0010] Some embodiments of the present disclosure provide a bonding device. The bonding device includes a controller, a vacuum pump communicatively coupled to the controller, a first vacuum valve and a second vacuum valve, a blower and a gas valve communicatively coupled to the controller, and a bonding head. The bonding head includes a body, a protrusion located on a central portion of a bottom surface of the body, a plurality of first vacuum channels located in the body, and a plurality of first switchable channels located in the body, wherein the first vacuum channels are connected to the vacuum pump through the first vacuum valve, and the controller is configured to simultaneously generate a vacuum in the first vacuum channels, wherein the first switchable channels are connected to the vacuum pump through the second vacuum valve and connected to the blower through the gas valve, and the controller is configured to simultaneously generate a vacuum or simultaneously generate a blowing in the first switchable channels.

[0011] According to one embodiment of the present disclosure, it further includes a plurality of second switchable channels located in the body, wherein the controller is configured to simultaneously generate a vacuum or simultaneously generate a blowing in the plurality of first switchable channels and the plurality of second switchable channels, wherein the openings of the plurality of first switchable channels form a plurality of first rows of openings along a first edge of the body in a bottom view, and wherein the openings of the plurality of second switchable channels form a plurality of second rows of openings along a second edge of the body opposite to the first edge in the bottom view.

[0012] According to one embodiment of the present disclosure, it further includes a plurality of second vacuum channels located in the body, wherein the controller is configured to simultaneously generate a vacuum in the plurality of first vacuum channels and the plurality of second vacuum channels, wherein the openings of the plurality of first vacuum channels form one or more rows of openings located between the plurality of first rows of openings and the protrusion in the bottom view, and wherein the openings of the plurality of second vacuum channels form one or more rows of openings located between the plurality of second rows of openings and the protrusion in the bottom view.

[0013] According to one embodiment of the present disclosure, each of the plurality of first vacuum channels has the same first diameter, each of the plurality of first switchable channels has the same second diameter, and wherein the first diameter is greater than the second diameter. Description of the Drawings

[0014] The concepts of the embodiments of the present disclosure will be better understood with reference to the following detailed description and the accompanying drawings. It should be noted that, in accordance with the standard practice in this industry, the various features in the drawings are not necessarily drawn to scale. In fact, the dimensions of the various features may be arbitrarily enlarged or reduced for clarity of illustration.

[0015] Figure 1A 、 Figure 1B and Figure 1C illustrate aspects of a bonding device in accordance with some embodiments.

[0016] Figure 2A 、 Figure 2B 、 Figure 3 、 Figure 4A 、 Figure 4B 、 Figure 5 、 Figure 6 and Figure 7A illustrate a pick-and-place process performed using the bonding device in accordance with some embodiments.

[0017] Figure 7B illustrate the process flow of a pick-and-place process performed using the bonding device in accordance with some embodiments.

[0018] Figure 8 、 Figure 9 、 Figure 10 and Figure 11 illustrate cross-sectional views of intermediate stages of manufacturing an integrated circuit package in accordance with some embodiments.

[0019] Figure 12A and Figure 12B illustrate aspects of a bonding device in accordance with some embodiments.

[0020] The reference numerals are as follows:

[0021] 10: Bonding head

[0022] 12: Base

[0023] 14: Adapter

[0024] 15: Body

[0025] 16: Vacuum channel

[0026] 18: Switchable channel

[0027] 20: Protrusion

[0028] 30: Bonding head

[0029] 50: Top integrated circuit die

[0030] 52: Semiconductor substrate

[0031] 54: Interconnection structure

[0032] 56: Bonding layer

[0033] 58: Die connector

[0034] 100: Bottom integrated circuit die

[0035] 102: Semiconductor substrate

[0036] 104: Interconnection structure

[0037] 105: Conductive via

[0038] 106: Bonding layer

[0039] 108: Die connector

[0040] 112: Carrier

[0041] 114: Adhesive

[0042] 116: Gap filling layer

[0043] 118: Bonding layer

[0044] 120: Die connector

[0045] 150: Wafer structure

[0046] 210: Gap filling layer

[0047] 212: Carrier

[0048] 213: Bonding layer

[0049] 214: Bonding layer

[0050] 216: Dielectric layer

[0051] 218: Under bump metal

[0052] 220: Electrical connector

[0053] 228: Package substrate

[0054] 230: Bonding pad

[0055] 234: Underfill

[0056] 250: Wafer structure

[0057] 250’: Integrated circuit package component

[0058] 300: Vacuum pump

[0059] 302,304: Vacuum pipeline

[0060] 303, 305: Vacuum valve

[0061] 350: Blower

[0062] 352: Gas pipeline

[0063] 353: Gas valve

[0064] 400: Controller

[0065] 402: Processing unit

[0066] 404: Display

[0067] 406: Input / Output (I / O) component

[0068] 408: Central processing unit

[0069] 410: Memory

[0070] 412: Mass storage device

[0071] 414: Video adapter

[0072] 416: Input / Output (I / O) interface

[0073] 418: Bus

[0074] 420: Network interface

[0075] 422: Local Area Network (LAN) / Wide Area Network (WAN)

[0076] 450: Joining device

[0077] 500: Process flow

[0078] 502, 504, 506, 508, 510, 512: Steps

[0079] W1, W2, W3, W4, W5: Width

[0080] R1, R2: Diameter

[0081] A - A’: Reference cross-section Detailed implementation manner

[0082] The following disclosure provides many different embodiments or examples for implementing different features of the embodiments of the present disclosure. The following describes specific examples of components and configurations to simplify the description of the embodiments of the present disclosure. Of course, these specific examples are only illustrative and not intended to limit the embodiments of the present disclosure. For example, in the following description, it is mentioned that the first feature is formed on or above the second feature, which means that it may include an embodiment in which the first feature and the second feature are in direct contact, and may also include an embodiment in which additional features are formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may repeat reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself limit the relationship between the various embodiments and / or configurations described.

[0083] In addition, spatially relative terms such as "below", "beneath", "lower", "above", "upper" and the like may be used herein for ease of description to describe the relationship between one element or feature shown in the drawings and another (s) element or feature. These spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation shown in the drawings. The device may be turned in a different orientation (rotated 90 degrees or other orientations), and the spatially relative terms used herein may be interpreted accordingly.

[0084] A bonding device and a method of manufacturing an integrated circuit package using the bonding device are provided. According to some embodiments, the bonding device may include a bonding head, a vacuum pump, a blower, and a controller. The bonding head may include a vacuum channel and a switchable channel, which may be switched between a vacuum mode and a blowing mode by the controller. Manufacturing an integrated circuit package may include placing an integrated circuit die on a wafer structure and bonding the integrated circuit die to the wafer structure. Placing the integrated circuit die on the wafer structure using the bonding device may cause the integrated circuit die to first warp and then gradually flatten on the wafer structure, which may reduce or prevent voids between the integrated circuit die and the wafer structure during the bonding process, thereby improving the yield and reliability of the integrated circuit package.

[0085] Figure 1AShows aspects of a bonding apparatus 450 that includes a bonding head 10, a vacuum pump 300 connected to the bonding head 10, a blower 350 connected to the bonding head 10, and a controller 400 communicatively coupled to the vacuum pump 300 and the blower 350. The bonding apparatus 450 can be used to perform a pick-and-place process, where the controller 400 can be configured to direct a first substrate to be placed on a second substrate through the bonding head 10. In some embodiments, the first substrate is a top integrated circuit die 50 (shown in Figure 2A and Figure 2B ), the second substrate is a wafer structure 150 (shown in Figure 4A and Figure 4B ), and the pick-and-place process is part of the manufacture of an integrated circuit package. The pick-and-place process using the bonding apparatus 450 is described below by way of example in such an embodiment. By controlling the actions taken by the bonding head 10, the vacuum pump 300, the blower 350, and various valves, the controller 400 can be configured to first warp the top integrated circuit die 50 and then gradually flatten the top integrated circuit die 50 (e.g., from the central portion to the peripheral portion of the integrated circuit die) on the wafer structure 150, which can reduce or place the void between the top integrated circuit die 50 and the wafer structure 150 in a subsequent annealing process, thereby improving the yield and reliability of the integrated circuit package.

[0086] The bonding head 10 includes a base 12 and an adapter 14 located on the bottom surface of the base 12. The base 12 and the adapter 14 can be collectively referred to as the body 15. A protrusion 20 is provided on the bottom surface of the adapter 14. The adapter 14 together with the protrusion 20 can be separated from the base 12, and different adapters with different protrusions can be connected to the base 12, as described in more detail below. Each side of the body 15 is provided with a vacuum channel 16 and a switchable channel 18. Each switchable channel 18 is provided between a side wall of the body 15 and the corresponding vacuum channel 16 located on the same side of the body 15. In some embodiments, the vacuum channel 16 and the switchable channel 18 are perpendicular to the bottom surface of the adapter 14.

[0087] The vacuum channel 16 and the switchable channel 18 are respectively connected to a vacuum pump 300 through a vacuum pipeline 302 and a vacuum pipeline 304, such that the vacuum pump 300 can generate a vacuum in the vacuum channel 16 and the switchable channel 18 according to the instructions of a controller 400. A vacuum valve 303 and a vacuum valve 305 are respectively disposed on the main pipelines of the vacuum pipeline 302 and the vacuum pipeline 304, and are communicatively coupled to the controller 400. The switchable channel 18 is connected to a blower 350 through a gas pipeline 352, such that the blower 350 (e.g., a mechanical blower, a compressed gas tank, etc.) can blow air (e.g., air, nitrogen) through the switchable channel 18 according to the instructions of the controller 400. A gas valve 353 is disposed on the main pipeline of the gas pipeline 352 and is communicatively coupled to the controller 400. By directing the actions taken by the vacuum pump 300, the blower 350, the vacuum valve 303, the vacuum valve 305, and the gas valve 353, the controller 400 can direct the actions in the vacuum channel 16 and the switchable channel 18 during a pick-and-place process, as described in more detail below. The bonding device 450 may further include a robotic arm (not shown separately) connected to the bonding head 10 and communicatively coupled to the controller 400, such that the controller 400 can direct the movement of the bonding head 10 during the pick-and-place process.

[0088] The adapter 14 of the body 15 may have a width W1. The width W1 may be the distance from the first sidewall of the adapter 14 to the second sidewall of the adapter 14 opposite the first sidewall. The vacuum channel 16 located on the first side of the body 15 may be spaced apart from the vacuum channel 16 located on the second side of the body 15 by a width W2, the second side being opposite the first side. The width W2 may be the distance from the inner sidewall of the vacuum channel 16 on the first side of the body 15 to the inner sidewall of the vacuum channel 16 on the second side of the body 15. The width W2 may be greater than approximately half of the width W1. In some embodiments, the width W1 is greater than about 15 mm, and the width W2 is greater than about 7.5 mm. The protrusion 20 may have a width W3 that is less than the width W2. The width W2 being greater than approximately half of the width W1 may result in the width W3 of the protrusion 20 being large enough to cause a certain degree of warping of the integrated circuit die attached to the bonding head 10, which may be beneficial for the manufacture of integrated circuit packages, as described in more detail below. Figure 1A An example is shown where the base 12 and the adapter 14 of the body 15 have the same width. In some embodiments, the base 12 and the adapter 14 may have different widths.

[0089] The top openings of the vacuum channel 16 and the switchable channel 18 may be connected to a distribution manifold (not shown separately), and the distribution manifolds are connected to the vacuum pipeline 302, the vacuum pipeline 304, and the gas pipeline 352. Figure 1AShown as an example are a vacuum channel 16 and a switchable channel 18 extending through the body 15, which corresponds to an embodiment where the distribution manifold is disposed outside the bonding head 10. In some embodiments, the distribution manifold is disposed inside the bonding head 10, where the vacuum channel 16 and the switchable channel 18 extend within the body 15. The base 12 and the adapter 14 may comprise a rigid material such as ceramic, metal, etc. or a combination thereof. In some embodiments, the base 12 and the adapter 14 may comprise the same material.

[0090] Figure 1B A bottom-up view of the bonding head 10 is shown. Figure 1A The cross-sectional view of the bonding head 10 shown in Figure 1B can be obtained from the reference cross-section A-A’ in Figure 1B wherein the same reference signs indicate the same features. As shown in

[0091] The vacuum channel 16 and the switchable channel 18 may have a circular bottom opening. The bottom opening of the vacuum channel 16 may have a diameter R1, while the bottom opening of the switchable channel 18 may have a diameter R2. The diameter R1 may be greater than or equal to the diameter R2. In some embodiments, the diameters R1 and R2 may be greater than about 0.1 mm. As described in more detail below, the bottom openings of the vacuum channel 16 and the switchable channel 18 may apply an adhesive force to the integrated circuit die, while the bottom opening of the switchable channel 18 may apply a blowing force to the integrated circuit die in a separate subsequent step of the pick-and-place process. The diameters R1 and R2 being greater than about 0.1 mm may result in sufficient adhesive force and blowing force on the integrated circuit die, thereby improving the yield and reliability of the integrated circuit package. The bottom openings of each of the plurality of vacuum channels 16 and switchable channels 18 may be arranged in columns extending along the first and second edges of the body 15. The top openings of the vacuum channel 16 and the switchable channel 18 may have the same shape and size as the bottom openings of the vacuum channel 16 and the switchable channel 18.

[0092] Figure 1CIllustrates aspects of a controller 400 according to some embodiments. The controller 400 can be any form of computer processor capable of being used in an industrial environment to control a process machine. In one embodiment, the controller 400 includes a processing unit 402, such as a desktop computer, a workstation, a laptop computer, or a special-purpose unit customized for a specific application. The controller 400 can be equipped with a display 404 and one or more input / output components 406. The processing unit 402 can include a central processing unit (CPU) 408, a memory 410, a mass storage device 412, a video adapter 414, and an input / output (I / O) interface 416 connected to a bus 418.

[0093] The bus 418 can be one or more of several types of bus architectures, including a memory bus or memory controller, a peripheral bus, or a video bus. The central processing unit 408 can include any type of electronic data processor, and the memory 410 can include any type of system memory, such as static random access memory (SRAM), dynamic random access memory (DRAM), or read-only memory (ROM). The mass storage device 412 can include any type of storage device configured to store data, programs, and other information and to make the data, programs, and other information accessible via the bus 418. The mass storage device 412 can include, for example, one or more of a hard disk drive, a magnetic disk drive, or an optical disk drive. The memory 410 and / or the mass storage device 412 can be non-transitory computer-readable media on which programming is stored. The programming can include instructions that, when executed by the central processing unit 408, cause the controller 400 to perform the control functions described herein.

[0094] The video adapter 414 and / or the I / O interface 416 provide an interface for coupling external input and output devices to the processing unit 402. As Figure 1CAs shown, examples of input and output devices include a display 404 communicatively coupled to a video adapter 414 and I / O components 406 (e.g., mouse, keyboard, printer, etc.) communicatively coupled to an I / O interface 416. Other devices may be communicatively coupled to the processing unit 402, and additional or fewer interface cards may be utilized. For example, a serial interface card (not shown) may be used to provide a serial interface for a printer. The processing unit 402 may also include a network interface 420, which may be a wired link and / or wireless link to a local area network (LAN) or wide area network (WAN) 422. It should be noted that the controller 400 may include other components. For example, the controller 400 may include a power supply, cables, a motherboard, removable storage media, a housing, etc. Although these other components are not shown in Figure 1C they are considered to be part of the controller 400.

[0095] Figure 2A , Figure 2B , Figure 3 , Figure 4A , Figure 4B , Figure 5 , Figure 6 and Figure 7A FIGS. show a pick-and-place process and a bonding process performed by a bonding device 450 according to some embodiments, wherein as part of the manufacture of an integrated circuit package, a top integrated circuit die 50 is placed on a wafer structure 150 and bonded to the wafer structure 150 by the bonding device 450. The pick-and-place process may include multiple steps, which are schematically reflected in Figure 7B the process flow 500 shown.

[0096] In Figure 2A , the controller 400 guides the bonding head 10 to move to the top integrated circuit die 50. In some embodiments, the bottom surface of the protrusion 20 contacts the top surface of the top integrated circuit die 50. The corresponding process is shown as Figure 7B step 502 in the process flow 500 shown. The top integrated circuit die 50 may have a width W4. The width W1 of the body 15 may be greater than the width W4. The outer sidewalls of the switchable channels 18 located on the first side of the body 15 may be spaced apart from the outer sidewalls of the switchable channels 18 located on the second side of the body 15 by a width W5. The width W4 of the top integrated circuit die 50 may be greater than the width W5. As described in more detail below, the top integrated circuit die 50 may be attached to the body 15 in a subsequent step of the pick-and-place process, and the width W4 of the top integrated circuit die 50 being less than the width W1 and greater than the width W5 may result in a more secure attachment of the top integrated circuit die 50, thereby improving the yield and reliability of the integrated circuit package.

[0097] Figure 2B Shows aspects of a top integrated circuit die 50 according to some embodiments. The top integrated circuit die 50 can be a logic die (e.g., CPU, graphics processing unit (GPU), system-on-a-chip (SoC), application processor (AP), microcontroller, etc.), a memory die (e.g., DRAM die, SRAM die, etc.), a power management die (e.g., power management integrated circuit (PMIC) die), a radio frequency (RF) die, a sensor die, a micro-electro-mechanical-system (MEMS) die, a signal processing die (e.g., digital signal processing (DSP) die), a front-end die (e.g., analog front-end (AFE) die), etc. or a combination thereof.

[0098] The top integrated circuit die 50 can have a semiconductor substrate 52, such as doped or undoped silicon, or the active layer of a semiconductor-on-insulator (SOI) substrate. The semiconductor substrate 52 can include other semiconductor materials, such as germanium, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, indium antimonide, SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and / or GaInAsP or a combination thereof. The semiconductor substrate 52 can have an active surface (e.g., Figure 2B a surface facing downwards, which can be referred to as the front side) and a non-active surface (e.g., Figure 2B a surface facing upwards, which can be referred to as the back side).

[0099] A device (not shown separately) can be disposed at the active surface of the semiconductor substrate 52. The device can be an active device (e.g., a transistor, a diode, etc.), a capacitor, a resistor, etc. The interconnect structure 54 can be disposed over the active surface of the semiconductor substrate 52. The interconnect structure 54 can interconnect the devices to form an integrated circuit. The interconnect structure 54 can be formed by a metallization pattern (not shown separately) in a dielectric layer (not shown separately). The dielectric layer can be a low-k (low dielectric constant) dielectric layer. The metallization pattern can include metal lines and vias, which can be formed in the dielectric layer by a damascene process (e.g., a single damascene process, a dual damascene process, etc.). The metallization pattern can be formed of a suitable conductive material, such as copper, tungsten, aluminum, silver, gold, combinations thereof, etc. The metallization pattern is electrically connected to the devices.

[0100] The bonding layer 56 can be disposed on the interconnect structure 54. The bonding layer 56 can be formed of an oxide (e.g., silicon oxide, phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), tetraethylorthosilicate (TEOS)-based oxide, etc.), a nitride (e.g., silicon nitride, etc.). The bonding layer 56 can be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. One or more passivation layers (not shown separately) can be disposed between the bonding layer 56 and the interconnect structure 54. The die interconnects 58 can extend through the bonding layer 56. The die interconnects 58 can include bond pads, conductive pillars, etc., and external connections can be made through the die interconnects 58. In some embodiments, the die interconnects 58 include a bonding pad located at the front side of the top integrated circuit die 50 and a via connecting the bonding pad to the metallization pattern of the interconnect structure 54. The die interconnects 58 including the bonding pad and the via can be formed by a damascene process, such as a single damascene process, a dual damascene process, etc. The die interconnects 58 can be formed of a conductive material such as copper, aluminum, etc. by a technique such as electroplating. A planarization process such as chemical-mechanical polishing (CMP), a grinding process, an etch-back process, combinations thereof, etc. can be performed on the bonding layer 56 and the die interconnects 58. In some embodiments, after the planarization process, the surfaces of the bonding layer 56 and the die interconnects 58 can be substantially coplanar or flush (within process variations).

[0101] In Figure 3In [description], the controller 400 generates a vacuum (e.g., negative pressure) simultaneously in the vacuum channel 16 and the switchable channel 18 by starting the vacuum pump 300 and opening the vacuum valve 303 and the vacuum valve 305 to attach and warp the top integrated circuit die 50. The corresponding process is shown as Figure 7B step 504 in the process flow 500 shown in [description]. When the controller 400 generates a vacuum in the vacuum channel 16 and the switchable channel 18, the bottom openings of the vacuum channel 16 and the switchable channel 18 can apply an adhesive force on the top integrated circuit die 50. The peripheral portion of the top integrated circuit die 50 disposed below the bottom openings of the vacuum channel 16 and the switchable channel 18 can be attached to and in contact with the bottom surface of the adapter 14, while the central portion of the top integrated circuit die 50 disposed below the protrusion 20 can be in contact with the protrusion 20. In this way, the top integrated circuit die 50 can be warped by the bonding head 10, wherein the central portion of the top integrated circuit die 50 can be spaced apart from the bottom surface of the adapter 14 through the protrusion 20, while the peripheral portion of the top integrated circuit die 50 can be in contact with the bottom surface of the adapter 14. In some embodiments, the top integrated circuit die 50 is warped into a bow shape. In some embodiments, after the top integrated circuit die 50 is warped, a gap is provided between the central portion of the top integrated circuit die 50 and the bottom surface of the protrusion 20.

[0102] In Figure 4A [description], the bonding head 10 is guided by the controller 400 to place the top integrated circuit die 50 on the wafer structure 150, wherein the central portion of the top integrated circuit die 50 can be flattened and in contact with the top surface of the wafer structure 150 and the bottom surface of the protrusion 20, while the peripheral portion of the top integrated circuit die 50 can be spaced apart from the top surface of the wafer structure 150. The corresponding process is shown as Figure 7B step 506 in the process flow 500 shown in [description]. Before placing the top integrated circuit die 50 on the wafer structure 150, an activation process (not shown) can be performed on the bottom surface of the top integrated circuit die 50 and the top surface of the wafer structure 150. The activation process can include water rinsing, plasma treatment, etc., which prepare the bottom surface of the top integrated circuit die 50 and the top surface of the wafer structure 150 for bonding when they come into contact, as described in more detail below. When the top integrated circuit die 50 is gradually flattened on the top surface of the wafer structure 150 by the protrusion 20, the warping of the top integrated circuit die 50 formed in the previous step can facilitate the discharge of air from the interface between the central portion of the top integrated circuit die 50 and the wafer structure 150, which can reduce or prevent voids between the top integrated circuit die 50 and the wafer structure 150 during the bonding process, thereby improving the yield and reliability of the integrated circuit package.

[0103] Figure 4B Shows various aspects of the wafer structure 150 according to some embodiments. The wafer structure 150 may include a bottom integrated circuit die 100 located on a carrier 112, a gap-fill layer 116 located on the carrier 112 and surrounding the bottom integrated circuit die 100, a bonding layer 118 located on the bottom integrated circuit die 100 and the gap-fill layer 116, and die connectors 120 extending through the bonding layer 118. The carrier 112 may be a semiconductor carrier, a glass carrier, a ceramic carrier, etc., and has the size of a wafer. The bottom integrated circuit die 100 may be attached to the carrier 112 by an adhesive 114. In some embodiments, the adhesive 114 is a thermally releasable layer, such as an epoxy-based light-to-heat-conversion (LTHC) release material, which loses its adhesive properties when heated. In some embodiments, the adhesive 114 is a UV glue, which loses its adhesive properties when exposed to UV light.

[0104] The bottom integrated circuit die 100 may be a logic die (e.g., CPU, GPU, SoC, AP, microcontroller, etc.), a memory die (e.g., DRAM die, SRAM die, etc.), a power management die (e.g., PMIC die), an RF die, a sensor die, a MEMS die, a signal processing die (e.g., DSP die), a front-end die (e.g., AFE die), etc. or a combination thereof. The materials and manufacturing processes of the features in the bottom integrated circuit die 100 may refer to the similar features in the top integrated circuit die 50. The bottom integrated circuit die 100 may include a semiconductor substrate 102, which may have an active surface (e.g., Figure 4B a surface facing downwards, which may be referred to as the front side) and a non-active surface (e.g., Figure 4B a surface facing upwards, which may be referred to as the back side). Devices (not shown separately) may be disposed at the active surface of the semiconductor substrate 102. The devices may be active devices (e.g., transistors, diodes, etc.), capacitors, resistors, etc. An interconnect structure 104 may be disposed on the active surface of the semiconductor substrate 102. The interconnect structure 104 may be formed by a metallization pattern (not shown separately) in a dielectric layer (not shown separately). Conductive vias 105 may extend through the semiconductor substrate 102 and be electrically connected to the metallization pattern of the interconnect structure 104. The conductive vias 105 may also be referred to as through-substrate vias (TSVs). A bonding layer 106 may be disposed on the interconnect structure 104. One or more passivation layers (not shown separately) may be disposed between the bonding layer 106 and the interconnect structure 104. Die connectors 108 may extend through the bonding layer 106 and may be electrically connected to the metallization pattern of the interconnect structure 104.

[0105] The gap filling layer 116 can be an insulating layer and can be formed of a dielectric material, such as silicon oxide, PSG, BSG, BPSG, TEOS-based oxide, etc., which can be formed by suitable deposition processes, such as CVD, ALD, etc. Initially, the gap filling layer 116 can cover the bottom integrated circuit die 100. Then a thinning process can be performed to make the surfaces of the gap filling layer 116, the semiconductor substrate 102, and the conductive vias 105 flush. The thinning process can be a CMP process, a grinding process, an etch-back process, a combination thereof, etc. Then, a bonding layer 118 can be formed on the gap filling layer 116 and the bottom integrated circuit die 100, and die connectors 120 can be formed through the bonding layer 118 to connect to the conductive vias 105. The bonding layer 118 can be formed of an oxide, such as silicon oxide, PSG, BSG, BPSG, TEOS-based oxide, etc., which can be formed by suitable deposition processes, such as CVD, ALD, etc. The die connectors 120 can be formed by a damascene process, such as a single damascene process, a dual damascene process, etc. The die connectors 120 can be formed of a metal, such as copper, aluminum, etc., which can be formed by processes such as electroplating. A planarization process, such as CMP, a grinding process, an etch-back process, a combination thereof, etc., can be performed on the bonding layer 118 and the die connectors 120. In some embodiments, after the planarization process, the surfaces of the bonding layer 118 and the die connectors 120 can be substantially coplanar or flush (within process variations).

[0106] In Figure 5 it, the controller 400 cancels the vacuum in the vacuum channel 16 and simultaneously maintains the vacuum in the switchable channel 18 by closing the vacuum valve 303 and keeping the vacuum valve 305 open to partially release the top integrated circuit die 50. The corresponding process is shown as Figure 7B step 508 in the process flow 500 shown in it. In this way, as the top integrated circuit die 50 gradually flattens and the air at the interface between the top integrated circuit die 50 and the wafer structure 150 is gradually exhausted, the contact area between the central portion of the top integrated circuit die 50 and the wafer structure 150 can gradually increase, which can reduce or prevent voids between the top integrated circuit die 50 and the wafer structure 150 during the bonding process, thereby improving the yield and reliability of the integrated circuit package. The peripheral portion of the top integrated circuit die 50 disposed below the bottom opening of the switchable channel 18 can still be spaced apart from the top surface of the wafer structure 150.

[0107] In Figure 6In this process, the controller 400 first cancels the vacuum in the switchable channel 18 by closing the vacuum valve 305 to completely release the top integrated circuit die 50. Then, the controller 400 simultaneously generates a blowing air (e.g., positive pressure) in the switchable channel 18 by starting the blower 350 and opening the gas valve 353 to flatten the peripheral portion of the top integrated circuit die 50. The corresponding process is shown as Figure 7B step 510 in the process flow 500 shown in

[0108] When the controller 400 switches the switchable channel 18 from the vacuum mode to the blowing mode and generates a blowing air in the switchable channel 18, the bottom opening of the switchable channel 18 can apply a blowing force to the top integrated circuit die 50. The peripheral portion of the top integrated circuit die 50 disposed below the bottom opening of the switchable channel 18 can be blown away from the bottom surface of the adapter 14 and is pushed to contact the top surface of the wafer structure 150 as the air at the interface between the top integrated circuit die 50 and the wafer structure 150 is gradually exhausted. In this way, the warped top integrated circuit die 50 can be completely flattened, and the contact area between the top integrated circuit die 50 and the wafer structure 150 can be the same as the area of the bottom surface of the top integrated circuit die 50, which can reduce or prevent the void between the top integrated circuit die 50 and the wafer structure 150 during the bonding process, thereby improving the yield and reliability of the integrated circuit package. Figure 7A

[0108] Figure 7B step 512 in the process flow 500 shown in

[0109] If it is necessary to place more than one top integrated circuit die 50 on the wafer structure 150, the pick-and-place process described above regarding Figure 2A 、 Figure 2B 、 Figure 3 、 Figure 4A 、 Figure 4B 、 Figure 5 、 Figure 6 、 Figure 7A and Figure 7B can be repeated. As shown in Figure 3 、 Figure 4A and Figure 5As shown, the warpage of the top integrated circuit die 50 can be related to the size of the top integrated circuit die 50 and the size of the protrusion 20. When another integrated circuit die of a different size needs to be placed on the wafer structure 150 by the bonding head 10, the adapter 14 together with the protrusion 20 can be separated from the base 12, and different adapters with protrusions of different sizes can be connected to the base 12.

[0110] Figure 8 , Figure 9 , Figure 10 and Figure 11 FIG. shows a cross-sectional view of an intermediate stage of manufacturing an integrated circuit package using the top integrated circuit die 50 and the wafer structure 150 according to some embodiments. Figure 8 FIG. shows various aspects of the top integrated circuit die 50 and the wafer structure 150 after a pick-and-place process. The top integrated circuit die 50 can be placed on the wafer structure 150 in such a way that each die connector 58 of the top integrated circuit die 50 contacts or is disposed directly above a corresponding die connector 120 and the bonding layer 56 of the top integrated circuit die 50 contacts the bonding layer 118. The bonding layer 56 can be directly bonded to the bonding layer 118 by dielectric-to-dielectric bonding.

[0111] The bonding process can continue with a pressing step and an annealing step. In some embodiments, the pressing step is performed inside the bonding device 450, while the annealing step is performed outside the bonding device 450. During the pressing step, a small pressing force can be applied to press the top integrated circuit die 50 against the bonding layer 118 and the die interconnect 120. The pressing step can be performed at a low temperature, such as room temperature. After the pressing step, the bond between the bonding layer 56 of the top integrated circuit die 50 and the bonding layer 118 can be strengthened. The bond between the bonding layer 56 and the bonding layer 118 can be further strengthened in a subsequent annealing step at a higher temperature. After the annealing step, the die interconnect 58 of the top integrated circuit die 50 can be bonded to the corresponding die interconnect 120. The die interconnect 58 can be in physical contact with the die interconnect 120 after the pressing step, or can expand during the annealing step to be in physical contact with the die interconnect 120. During the annealing step, the material of the die interconnect 58 can be mixed or bonded with the material of the die interconnect 120, such that metal-to-metal bonds can be formed. After the annealing step, the top integrated circuit die 50 can be electrically connected to the bottom integrated circuit die 100 through the die interconnect 120. Since the top integrated circuit die 50 is flattened on the wafer structure 150 during the pick-and-place process as described above, after the annealing step, the interface between the peripheral portion (including each edge) of the top integrated circuit die 50 and the wafer structure 150 can be void-free.

[0112] Figure 8 A front-to-back bonding configuration is shown as an example, where the back side of the semiconductor substrate 102 of the bottom integrated circuit die 100 faces the front side of the semiconductor substrate 52 of the top integrated circuit die 50 after bonding. Other bonding configurations can also be envisioned, such as a front-to-front bonding configuration. In the front-to-front bonding configuration, the front side of the semiconductor substrate 102 can face the front side of the semiconductor substrate 52. Figure 8 A layout is shown as an example where one top integrated circuit die 50 covers one bottom integrated circuit die 100, but other layouts with other numbers of top integrated circuit dies 50 and bottom integrated circuit dies 100 can also be envisioned.

[0113] In Figure 9In [description], a gap-fill layer 210 is formed around the top integrated circuit die 50, and a carrier 212 is bonded to the top integrated circuit die 50 and the gap-fill layer 210. The gap-fill layer 210 can be formed by the same or similar method as the gap-fill layer 116 and is formed of the same or similar dielectric material as the gap-fill layer 116. A thinning process can be performed to remove portions of the semiconductor substrate 52 and the gap-fill layer 210. The thinning process can be CMP, a grinding process, an etch-back process, a combination thereof, etc., which can be performed on the back side of the semiconductor substrate 52. After the thinning process, the surfaces of the gap-fill layer 210 and the semiconductor substrate 52 can be substantially coplanar or flush (within process variations). The carrier 212 can be a semiconductor carrier, a glass carrier, a ceramic carrier, etc. The carrier 212 can be a wafer having the same or similar dimensions as the carrier 112. In some embodiments, the carrier 212 is bonded to the top integrated circuit die 50 and the gap-fill layer 210 using a bonding layer 213 and a bonding layer 214. The bonding layer 213 can be formed on the top integrated circuit die 50 and the gap-fill layer 210, and the bonding layer 214 can be formed on the carrier 212. Both the bonding layer 213 and the bonding layer 214 can include a dielectric material (e.g., silicon dioxide, etc.) and can be formed by a suitable deposition process, such as CVD, ALD, etc. By referring to Figure 8 the similar process described for bonding the bonding layer 118 and the bonding layer 56 to bond the bonding layer 213 and the bonding layer 214, the structure above the carrier 112 can be bonded to the carrier 212.

[0114] In Figure 10 [description], the carrier 112 and the adhesive 114 are removed, a dielectric layer 216 is formed on the gap-fill layer 116 and the bottom integrated circuit die 100, under-bump metallizations (UBMs) 218 are formed through the dielectric layer 216, and electrical connectors 220 are formed on the under-bump metallizations 218. The removal process of the carrier 112 and the adhesive 114 can include projecting a light beam, such as a laser beam or a UV beam, onto the adhesive 114 (shown in Figure 9 [description]) such that the adhesive 114 decomposes when exposed to the light beam, and the carrier 112 can be removed. In some embodiments, the dielectric layer 216 includes PBO, polyimide, a BCB-based polymer, etc. and can be formed by a suitable coating process, such as spin coating, lamination, etc. In some embodiments, the dielectric layer 216 includes silicon dioxide, silicon nitride, etc. and can be formed by a suitable deposition process, such as CVD, ALD, etc. In some embodiments, a redistribution structure (not shown separately) can be formed on the gap-fill layer 116 and the bottom integrated circuit die 100 to provide additional wiring before forming the dielectric layer 216.

[0115] The under-bump metal 218 may have a portion extending along the surface of the dielectric layer 216 and a portion extending through the dielectric layer 216 to physically and electrically connect to the die interconnect 108. As an example of forming the under-bump metal 218, the dielectric layer 216 may be patterned to form an opening exposing the underlying die interconnect 108. A seed layer (not shown separately) may be formed on the dielectric layer 216, in the opening through the dielectric layer 216, and on the exposed portion of the die interconnect 108. The seed layer may be a metal layer and may be formed using a suitable deposition process, such as physical vapor deposition (PVD), etc. Then a photoresist may be formed on the seed layer and patterned. A conductive material may be formed in the opening of the photoresist and on the exposed portion of the seed layer. The conductive material may be formed by electroplating, such as electroless plating, electrolytic plating, etc. Then the photoresist and the portion of the seed layer on which the conductive material is not formed may be removed. The remaining portions of the seed layer and the conductive material may form the under-bump metal 218.

[0116] The electrical interconnect 220 may be formed on the under-bump metal 218. The electrical interconnect 220 may be a ball grid array (BGA) interconnect, solder ball, metal pillar, controlled collapse chip connection (C4) bump, micro-bump, bump formed by electroless nickel-electroless palladium-immersion gold technique (ENEPIG), etc. In some embodiments, the electrical interconnect 220 includes a conductive material, such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, etc. or a combination thereof, and is formed by the following steps: First, a solder layer is formed by evaporation, electrolytic plating, printing, solder transfer, ball placement, etc., and then the conductive material is reflowed into the desired bump shape. In some embodiments, the electrical interconnect 220 includes metal pillars formed by sputtering, printing, electrolytic plating, electroless plating, CVD, etc., such as copper pillars, which do not contain solder and have substantially vertical sidewalls.

[0117] Wafer-level processing may be used to perform the processes discussed with respect to Figures 8 to 10 The carrier 212 may be a wafer and may include many structures similar to Figure 10 those shown (not shown separately). In this way, Figure 10The structure shown in Figure 11 can be referred to as a wafer structure 250 and can be singulated in a subsequent singulation process to form individual integrated circuit package components 250’ (shown in

[0118] . The wafer structure 250 can be placed on a tape supported by a frame and then singulated along a scribe line such that the wafer structure 250 can be divided into a plurality of discrete integrated circuit package components 250’. The singulation process can be a sawing process, a laser cutting process, etc. After the singulation process, a cleaning process or a rinsing process can be performed. Figure 11 In

[0119] , the integrated circuit package component 250’ is bonded to a package substrate 228, and an underfill 234 is formed between the integrated circuit package component 250’ and the package substrate 228. The package substrate 228 can include bonding pads 230. In some embodiments, the package substrate 228 includes materials such as glass fiber reinforced resin, bismaleimide-triazine (BT) resin, etc. In some embodiments, the package substrate 228 includes materials such as silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, indium arsenide, indium phosphide, silicon germanium carbide, gallium arsenide phosphide, gallium indium phosphide, etc.

[0120] During the bonding process, the electrical connector 220 can be reflowed to bond the integrated circuit package component 250' to the bonding pads 230 of the package substrate 228. The electrical connector 220 can electrically and physically connect the package substrate 228 to the integrated circuit package component 250'. In some embodiments, a solder mask (not shown separately) is provided on the package substrate 228. The electrical connector 220 can be disposed in an opening in the solder mask to electrically and physically connect to the bonding pads 230. The solder mask can be used to protect areas of the package substrate 228 from external damage. The underfill 234 can surround the electrical connector 220 and protect the joints created due to the reflow of the electrical connector 220. The underfill 234 can be formed by a capillary flow process after attaching the integrated circuit package component 250', or formed by a suitable deposition method before attaching the integrated circuit package component 250'. The underfill 234 can then be cured. Figure 11 The structure shown in can be referred to as an integrated circuit package 280.

[0121] Figure 12A and Figure 12B A cross-sectional view and a bottom view of the bonding head 30 are respectively shown. The bonding head 30 is similar to the bonding head 10 shown in FIGS. 1A and 1B, wherein in the bottom view of the bonding head 30, two rows of vacuum channels 16 are disposed between a row of switchable channels 18 and the protrusion 20 on each side of the body 15. Figure 12A The cross-sectional view of the bonding head 30 shown in can be obtained from Figure 12B the reference cross-section A-A' in the bottom view of the bonding head 30 shown in, where the same reference signs indicate the same features. Figure 1A and Figure 1B the bonding head 10 in and Figure 12A and Figure 12B the layout of the vacuum channels 16 and the switchable channels 18 of the bonding head 30 in are provided as examples. In some embodiments, more than two rows of vacuum channels 16 can be disposed between a row of switchable channels 18 and the protrusion 20 on each side of the body 15. In some embodiments, more than one row of switchable channels can be provided on each side of the body 15. Other numbers, shapes, sizes, and arrangements of the vacuum channels 16 and the switchable channels 18 are also conceivable.

[0122] Various embodiments have been described above in the context of forming a system on integrated chips (SoIC) package configuration. It should be understood that the various embodiments can also be adapted for use in forming other package configurations, such as integrated fan-out on substrate (InFO), chip on wafer on substrate (CoWoS), etc.

[0123] The embodiments described above may have some advantageous features. By using the bonding device 450 to place the top integrated circuit die 50 on the wafer structure 150, the top integrated circuit die 50 can first be warped and then gradually flattened on the wafer structure, and the air between the top integrated circuit die 50 and the wafer structure 150 can be gradually exhausted, which can reduce or prevent the voids between the top integrated circuit die 50 and the wafer structure 150 during the bonding process, thereby improving the yield and reliability of the integrated circuit package 280.

[0124] In one embodiment, a bonding device includes a vacuum pump, a blower, a controller communicatively coupled to the vacuum pump and the blower, and a bonding head. The bonding head includes a body, a first vacuum channel located in the body, and a first switchable channel located in the body, wherein the first vacuum channel is connected to the vacuum pump, and the first switchable channel is connected to the vacuum pump and the blower. In one embodiment, the first vacuum channel has a circular opening in a bottom view, the circular opening of the first vacuum channel has a first diameter, and the first switchable channel has a circular opening in a bottom view, the circular opening of the first switchable channel has a second diameter, wherein the first diameter is greater than or equal to the second diameter. In one embodiment, the second diameter is greater than 0.1 mm. In one embodiment, in the bottom view, the first switchable channel is located between a first edge of the body and the first vacuum channel. In one embodiment, the bonding device further includes a second switchable channel located in the body and a protrusion located on the bottom surface of the body, wherein the protrusion is disposed in a central region of the bottom surface of the body, wherein the protrusion is located between the second switchable channel and the first vacuum channel in a bottom view, and wherein the second switchable channel is connected to the vacuum pump and the blower. In one embodiment, the bonding device further includes a second vacuum channel located in the body, wherein the second vacuum channel is located between the second switchable channel and the protrusion in a bottom view, and wherein the second vacuum channel is connected to the vacuum pump. In one embodiment, the body has a first width, wherein the first vacuum channel and the second vacuum channel are spaced apart by a second width, and wherein the second width is greater than or equal to half of the first width.

[0125] In one embodiment, a bonding device includes a controller, a vacuum pump communicatively coupled to the controller, a first vacuum valve and a second vacuum valve, a blower and a gas valve communicatively coupled to the controller, and a bonding head. The bonding head includes a body, a protrusion located at a central portion of a bottom surface of the body, a plurality of first vacuum channels located in the body, and a plurality of first switchable channels located in the body, wherein the first vacuum channels are connected to the vacuum pump through the first vacuum valve, and the controller is configured to simultaneously generate a vacuum in the first vacuum channels, wherein the first switchable channels are connected to the vacuum pump through the second vacuum valve and connected to the blower through the gas valve, and the controller is configured to simultaneously generate a vacuum or simultaneously generate a blowing in the first switchable channels. In one embodiment, the bonding device further includes a plurality of second switchable channels located in the body, wherein the controller is configured to simultaneously generate a vacuum or simultaneously generate a blowing in the first switchable channels and the second switchable channels, wherein the openings of the first switchable channels form a first row of openings along a first edge of the body in a bottom view, and wherein the openings of the second switchable channels form a second row of openings along a second edge of the body opposite to the first edge in a bottom view. In one embodiment, the bonding device further includes a plurality of second vacuum channels located in the body, wherein the controller is configured to simultaneously generate a vacuum in the first vacuum channels and the second vacuum channels, wherein the openings of the first vacuum channels form one or more rows of openings located between the first row of openings and the protrusion in a bottom view, and wherein the openings of the second vacuum channels form one or more rows of openings located between the second row of openings and the protrusion in a bottom view. In one embodiment, each of the first vacuum channels has the same first diameter, each of the first switchable channels has the same second diameter, and the first diameter is greater than the second diameter.

[0126] In one embodiment, a method of forming an integrated circuit package includes: attaching a first substrate to a bonding head by generating a negative pressure in a first vacuum channel and a first switchable channel in the bonding head, wherein the first switchable channel is located between a first sidewall of the bonding head and the first vacuum channel; placing the first substrate on a top surface of a second substrate and forming a bond between the first substrate and the second substrate; releasing the negative pressure in the first vacuum channel while maintaining the negative pressure in the first switchable channel; and after releasing the negative pressure in the first vacuum channel, releasing the negative pressure in the first switchable channel and blowing the first substrate away from the bonding head by generating a positive pressure in the first switchable channel. In one embodiment, after attaching the first substrate to the bonding head, a central portion of the first substrate is in direct contact with a bottom surface of a protrusion of the bonding head, and a peripheral portion of the first substrate is in direct contact with a bottom surface of a body of the bonding head, and wherein the protrusion of the bonding head is located on the bottom surface of the body of the bonding head. In one embodiment, after placing the first substrate on the top surface of the second substrate, a central portion of the first substrate is in direct contact with the top surface of the second substrate, and a peripheral portion of the first substrate is spaced apart from the top surface of the second substrate. In one embodiment, after blowing the first substrate away from the bonding head, a peripheral portion of the first substrate is in direct contact with the top surface of the second substrate. In one embodiment, the duration of blowing the first substrate away from the bonding head exceeds 0.1 second. In one embodiment, the first substrate is warped by the bonding head and then flattened by the bonding head. In one embodiment, the method further includes annealing the first substrate and the second substrate after releasing the negative pressure in the first switchable channel and blowing the first substrate away from the bonding head, wherein after annealing the first substrate and the second substrate, there is no gap between an interface between an edge of the first substrate and the second substrate. In one embodiment, the method further includes annealing the first substrate and the second substrate after releasing the negative pressure in the first switchable channel and blowing the first substrate away from the bonding head, wherein annealing the first substrate and the second substrate strengthens the bond between the first substrate and the second substrate. In one embodiment, the body has a first width between a first sidewall of the body and a second sidewall of the body opposite the first sidewall, wherein the first substrate has a second width, and wherein the first width is greater than the second width.

[0127] The features of many embodiments are outlined above so that those skilled in the art to which this disclosure pertains can better understand the various embodiments of this disclosure. Those skilled in the art to which this disclosure pertains should understand that other processes and structures can be easily designed or changed based on the embodiments of this disclosure to achieve the same purposes and / or attain the same advantages as the embodiments introduced herein. Those skilled in the art to which this disclosure pertains should also understand that these equivalent structures do not depart from the spirit and scope of this disclosure. Various changes, substitutions, and alterations can be made to the embodiments of this disclosure without departing from the spirit and scope of the appended claims.

Claims

1. A bonding device, characterized in that, Comprising: A vacuum pump; A blower; A controller communicatively coupled to the vacuum pump and the blower; And A joint head, wherein the joint head comprises: A body; A first vacuum channel located in the body, wherein the first vacuum channel is connected to the vacuum pump; and A first switchable channel located in the body, wherein the first switchable channel is connected to the vacuum pump and the blower.

2. The bonding device according to claim 1, characterized in that, The first vacuum channel has a circular opening in a bottom view, the circular opening of the first vacuum channel has a first diameter, and the first switchable channel has a circular opening in the bottom view, the circular opening of the first switchable channel has a second diameter, and wherein the first diameter is greater than or equal to the second diameter.

3. The bonding device according to claim 1, characterized in that, In a bottom view, the first switchable channel is located between a first edge of the body and the first vacuum channel.

4. The bonding device according to claim 1, wherein Further comprising a second switchable channel located in the body and a protrusion located on a bottom surface of the body, wherein the protrusion is disposed in a central region of the bottom surface of the body, wherein the protrusion is located between the second switchable channel and the first vacuum channel in a bottom view, and wherein the second switchable channel is connected to the vacuum pump and the blower.

5. The bonding device according to claim 4, wherein, Further comprising a second vacuum channel located in the body, wherein the second vacuum channel is located between the second switchable channel and the protrusion in the bottom view, and wherein the second vacuum channel is connected to the vacuum pump.

6. The bonding device according to claim 5, wherein, The body has a first width, wherein the first vacuum channel and the second vacuum channel are spaced apart by a second width, and wherein the second width is greater than or equal to half of the first width.

7. A bonding device, characterized in that, Comprising: A controller; A vacuum pump, a first vacuum valve and a second vacuum valve communicatively coupled to the controller; A blower and a gas valve communicatively coupled to the controller; And A joint head, wherein the joint head comprises: A body; A protrusion located on a central portion of a bottom surface of the body; A plurality of first vacuum channels located in the body, wherein the plurality of first vacuum channels are connected to the vacuum pump through the first vacuum valve, and wherein the controller is configured to simultaneously generate a vacuum in the plurality of first vacuum channels; and A plurality of first switchable channels located in the body, wherein the plurality of first switchable channels are connected to the vacuum pump through the second vacuum valve and connected to the blower through the gas valve, and wherein the controller is configured to simultaneously generate a vacuum in the plurality of first switchable channels or simultaneously generate a blowing in the plurality of first switchable channels.

8. The bonding device according to claim 7, wherein, Further comprising a plurality of second switchable channels located in the body, wherein the controller is configured to simultaneously generate a vacuum in the plurality of first switchable channels and the plurality of second switchable channels or simultaneously generate a blowing in the plurality of first switchable channels and the plurality of second switchable channels, wherein the openings of the plurality of first switchable channels form a plurality of first row openings along a first edge of the body in a bottom view, and wherein the openings of the plurality of second switchable channels form a plurality of second row openings along a second edge of the body opposite to the first edge in the bottom view.

9. The bonding device according to claim 8, wherein, It further includes a plurality of second vacuum channels located in the body, wherein the controller is configured to generate a vacuum in the plurality of first vacuum channels and the plurality of second vacuum channels simultaneously, wherein the openings of the plurality of first vacuum channels form one or more rows of openings between the plurality of first row of openings and the protrusion in the bottom view, and wherein the openings of the plurality of second vacuum channels form one or more rows of openings between the plurality of second row of openings and the protrusion in the bottom view.

10. The bonding device according to claim 7, wherein, Each of the plurality of first vacuum channels has the same first diameter, each of the plurality of first switchable channels has the same second diameter, and the first diameter is greater than the second diameter.

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