Polycrystalline silicon reduction furnace with 50 pairs of rods

Abstract

The utility model discloses a polycrystalline silicon reduction furnace with 50 pairs of rods, which relates to the technical field of polycrystalline silicon reduction, and comprises 50 pairs of silicon rods arranged on a chassis, the 50 pairs of silicon rods are arranged according to a concentric circle, and the arrangement mode is as follows: 5 pairs of silicon rods, 10 pairs of silicon rods, 15 pairs of silicon rods and 20 pairs of silicon rods are sequentially arranged from an inner ring to an outer ring; wherein from inside to outside, the five pairs of silicon rods in the first circle are a first group of silicon rods, the two groups of five pairs of silicon rods in the second circle are respectively a second group of silicon rods and a third group of silicon rods, and the three groups of five pairs of silicon rods in the third circle are respectively a fourth group of silicon rods, a fifth group of silicon rods and a sixth group of silicon rods; the six pairs of silicon rods, the seven pairs of silicon rods and the seven pairs of silicon rods in the fourth circle are respectively a seventh group of silicon rods, an eighth group of silicon rods and a ninth group of silicon rods, and in the first group of silicon rods to the ninth group of silicon rods, each group of silicon rods corresponds to a phase current and is connected with an electric appliance control cabinet. 9-phase distribution improves the temperature control precision in the furnace; in the operation process, compared with a similar phase 6, the operation voltage is low, and the probability of grounding fault occurrence is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of polysilicon reduction, and more specifically to a 50-pair rod polysilicon reduction furnace. Background Art

[0002] Polysilicon is the direct material for producing monocrystalline silicon, and high-purity polysilicon is the basic material for semiconductor devices such as photovoltaic conversion batteries and integrated circuits. With the rapid development of the world semiconductor industry, the large-scale application of ultra-large scale integrated circuits, and the large demand for photovoltaic cells, the global demand for polysilicon has increased significantly. The polysilicon reduction furnace is the main equipment for producing polysilicon, and at the same time, the polysilicon reduction furnace is a high-energy-consuming equipment. Therefore, the quality of the reduction furnace and its energy-saving performance directly affect the product quality and production cost.

[0003] Currently, the common number of silicon rods in polysilicon reduction furnaces is 24, 48, 60, 72, etc. For 48 pairs of rods and below, 6-phase power supply is often used. There is no application of 50 pairs of rods in the industry. To solve the safe, reliable, efficient and stable operation of 50 pairs of rods, it is necessary to study the 50-pair rod reduction furnace and its power supply method. Summary of the Utility Model

[0004] In order to overcome the defects existing in the above-mentioned prior art, the purpose of the utility model is to provide a 50-pair rod polysilicon reduction furnace. The utility model adopts a 9-phase power supply method of 5, 5, 5, 5, 5, 5, 6, 7, 7 to meet the stable control of process production and the safe operation of the equipment in each gear, and reduce the occurrence of grounding faults during operation, so as to achieve the purpose of stable, efficient and safe operation.

[0005] In order to achieve the above purpose, the technical solution adopted by the utility model is:

[0006] A 50-pair rod polysilicon reduction furnace, comprising:

[0007] A reduction furnace body;

[0008] A chassis located inside the reduction furnace body;

[0009] 50 pairs of silicon rods arranged on the chassis, and the 50 pairs of silicon rods are arranged in concentric circles. The arrangement method is: from the inner circle to the outer circle, there are 5 pairs of silicon rods, 10 pairs of silicon rods, 15 pairs of silicon rods, and 20 pairs of silicon rods in sequence;

[0010] Among them, from the inside to the outside, the 5 pairs of silicon rods in the first circle are the first group of silicon rods, the two groups of 5 pairs of silicon rods in the second circle are the second group of silicon rods and the third group of silicon rods respectively, the three groups of 5 pairs of silicon rods in the third circle are the fourth group of silicon rods, the fifth group of silicon rods and the sixth group of silicon rods respectively, and the 6 pairs, 7 pairs and 7 pairs of silicon rods in the fourth circle are the seventh group of silicon rods, the eighth group of silicon rods and the ninth group of silicon rods respectively. Among the first group of silicon rods to the ninth group of silicon rods, each group of silicon rods corresponds to a phase current and is connected to an electrical control cabinet.

[0011] Preferably, nozzles are provided on the chassis. Among them, 1 nozzle is provided at the center of the chassis, 5 nozzles are evenly distributed between the first circle of silicon rods and the second circle of silicon rods, 15 nozzles are evenly distributed between the second circle of silicon rods and the third circle of silicon rods, and 15 nozzles are evenly distributed between the third circle of silicon rods and the fourth circle of silicon rods.

[0012] Preferably, exhaust holes are provided on the chassis, and the exhaust holes are distributed only on the outside of the silicon rods in the outermost circle.

[0013] Preferably, 8 exhaust holes are evenly distributed across the middle of the outermost circle of silicon rods.

[0014] Preferably, in each circle of silicon rods, the center distance between adjacent silicon rods is 240 mm.

[0015] Preferably, among the four circles where 50 pairs of silicon rods are arranged in concentric circles, the diameters of each circle from the inside to the outside are 776 mm, 1534 mm, 2296 mm and 3058 mm in sequence.

[0016] Preferably, among the three circles of nozzles, the diameters of the circles where the nozzles are located in each circle from the inside to the outside are 1155 mm, 1915 mm and 2680 mm in sequence.

[0017] Preferably, the diameter of the circle where the exhaust holes are located is 3354 mm.

[0018] Preferably, the inner diameter of the exhaust holes is 119 mm.

[0019] Preferably, the diameter of the chassis is 3650 mm.

[0020] Advantages of the present utility model:

[0021] The 50-pair rod polysilicon reduction furnace provided by the present utility model fills the gap of 50-pair rod reduction furnaces and their power supply schemes. It adopts a 9-phase power supply method of 5, 5, 5, 5, 5, 5, 6, 7, 7 pairs, which meets the stable control of process production and the safe operation of the equipment in each gear, reduces the occurrence of grounding faults during operation, and achieves the purpose of stable, efficient and safe operation.

[0022] The 50-pair rod polysilicon reduction furnace provided by the present utility model has a 9-phase distribution, which improves the temperature control accuracy in the furnace. In the reduction furnace, each pair of silicon rods is loaded with current, and the current makes the silicon rods generate heat to change the temperature in the furnace. The temperature in the furnace can be controlled by controlling the magnitude of the loaded current. One-phase current is loaded on multiple pairs of silicon rods. When the number of silicon rods loaded with one-phase current decreases, the one-phase current is adjusted, and the heat generated by the loaded silicon rods decreases, making it easier to adjust the temperature in the furnace within a small range and improving the temperature control accuracy in the furnace. In the present utility model, the maximum number of silicon rods loaded with one-phase current is 7 pairs, and the minimum is 5 pairs. The number of silicon rods loaded with one-phase current is relatively small to improve the temperature control accuracy in the furnace.

[0023] The 50-pair rod polysilicon reduction furnace provided by the present utility model has a lower operating voltage during operation compared with the same type of 6-phase furnace, reducing the probability of grounding faults. When the reduction furnace operates at too high a voltage, the silicon rods in the furnace are prone to grounding faults, causing losses. According to the current calculation formula I = U / R, when the current is maintained constant, the larger the R, the larger the required operating voltage U, and the greater the operating voltage U, the more likely a grounding fault will occur. Therefore, one of the measures to reduce the probability of grounding faults is to reduce the magnitude of the resistance R. The resistance R represents the resistance of multiple pairs of silicon rods loaded with one-phase current. When the number of silicon rods loaded with one-phase current decreases, the resistance R can be reduced, thereby reducing the operating voltage U to reduce the probability of grounding faults. In the present utility model, the maximum number of silicon rods loaded with one-phase current is 7 pairs, and the minimum is 5 pairs. The number of silicon rods loaded with one-phase current is relatively small, reducing the resistance R, thereby reducing the operating voltage U and reducing the probability of grounding faults. Description of the Drawings

[0024] Figure 1 It is a schematic diagram of the present utility model;

[0025] Reference Signs:

[0026] 1, chassis; 2, silicon rod; 3, nozzle; 4, tail gas hole. Detailed Embodiments

[0027] The following will clearly and completely describe the concept, specific structure, and technical effects generated by the present utility model in combination with embodiments and drawings to fully understand the purpose, features, and effects of the present utility model.

[0028] A 50-pair rod polysilicon reduction furnace, as Figure 1 shown, includes:

[0029] Reduction furnace body;

[0030] A chassis 1 located inside the reduction furnace body;

[0031] 50 pairs of silicon rods 2 arranged on the chassis, and the 50 pairs of silicon rods 2 are arranged in concentric circles. The arrangement method is as follows: from the inner circle to the outer circle, there are 5 pairs of silicon rods, 10 pairs of silicon rods, 15 pairs of silicon rods, and 20 pairs of silicon rods in sequence;

[0032] Among them, from the inside to the outside, the 5 pairs of silicon rods in the first circle are the first group of silicon rods, the two groups of 5 pairs of silicon rods in the second circle are the second group of silicon rods and the third group of silicon rods respectively, the three groups of 5 pairs of silicon rods in the third circle are the fourth group of silicon rods, the fifth group of silicon rods and the sixth group of silicon rods respectively, and the 6 pairs of silicon rods, 7 pairs of silicon rods and 7 pairs of silicon rods in the fourth circle are the seventh group of silicon rods, the eighth group of silicon rods and the ninth group of silicon rods respectively. Among the first group of silicon rods to the ninth group of silicon rods, each group of silicon rods corresponds to a phase current and is connected to an electrical control cabinet.

[0033] This embodiment fills the gap in the 50 - pair rod reduction furnace and its power supply scheme. It adopts a 9 - phase power supply method of 5, 5, 5, 5, 5, 5, 6, 7, 7 pairs, which meets the stable control of process production and the safe operation of the equipment in each gear, reduces the occurrence of grounding faults during operation, and achieves the purpose of stable, efficient and safe operation.

[0034] In the reduction furnace, each pair of silicon rods is loaded with current, and the current makes the silicon rods heat up and changes the temperature in the furnace. The temperature in the furnace can be controlled by controlling the magnitude of the loaded current. One - phase current is loaded on multiple pairs of silicon rods. When the number of silicon rods loaded with one - phase current decreases, the one - phase current is adjusted, and the heat generation of the silicon rods it loads decreases, so that it is easier to adjust the temperature in the furnace in a small range and improve the temperature control accuracy in the furnace. In the present utility model, the maximum number of silicon rods loaded with one - phase current is 7 pairs, and the minimum is 5 pairs. The number of silicon rods loaded with one - phase current is relatively small to improve the temperature control accuracy in the furnace.

[0035] For example, for the 6 - phase power supply of 48 pairs of rods in the prior art, when controlling the current to adjust the temperature in the furnace, the one - phase current is evenly loaded on 8 pairs of silicon rods on average. Adjusting the one - phase current will cause 8 pairs of silicon rods to heat up to change the temperature in the furnace.

[0036] In the present utility model, for its 9 - phase power supply of 50 pairs of rods, when controlling the current to adjust the temperature in the furnace, the one - phase current is loaded on at most 7 pairs of silicon rods, which is less than 8 pairs. The heat generation of 7 pairs of silicon rods is less than that of 8 pairs of silicon rods. Therefore, the accuracy of adjusting the temperature in the furnace is higher, and it is easier to adjust the temperature in the furnace in a small range, improving the temperature control accuracy in the furnace.

[0037] When the reduction furnace operates at too high a voltage, the silicon rods in the furnace are prone to grounding faults, resulting in losses. According to the current calculation formula I = U / R, when the current is maintained constant, the larger the R, the larger the operating voltage U required. The larger the operating voltage U, the more likely a grounding fault will occur. Therefore, one of the measures to reduce the probability of grounding faults is to reduce the size of the resistance R. The resistance R represents the resistance of multiple pairs of silicon rods loaded with a single-phase current. When the number of silicon rods loaded with a single-phase current decreases, the resistance R can be reduced, thereby reducing the operating voltage U and reducing the probability of grounding faults. In the present utility model, the number of silicon rods loaded with a single-phase current is at most 7 pairs and at least 5 pairs. The number of silicon rods loaded with a single-phase current is small, reducing the resistance R, thereby reducing the operating voltage U and reducing the probability of grounding faults.

[0038] For example, when a certain current I is maintained constant. For the 48-pair rod 6-phase power supply in the prior art, the average single-phase current is loaded on 8 pairs of silicon rods, that is, the resistance R is 8 pairs of silicon rods. In the present utility model, for its 50-pair rod 9-phase power supply, the single-phase current is at most loaded on 7 pairs of silicon rods, that is, the resistance R is at most 7 pairs of silicon rods, which is smaller than 8 pairs of silicon rods. Therefore, its operating voltage U is relatively reduced, reducing the probability of grounding faults.

[0039] As Figure 1 shown, a nozzle 3 is provided on the chassis 1. Among them, 1 nozzle 3 is provided at the center of the chassis 1, and 5 nozzles 3 are evenly distributed between the first circle of silicon rods and the second circle of silicon rods, and 15 nozzles 3 are evenly distributed between the second circle of silicon rods and the third circle of silicon rods, and 15 nozzles 3 are evenly distributed between the third circle of silicon rods and the fourth circle of silicon rods.

[0040] As Figure 1 shown, exhaust gas holes 4 are provided on the chassis. The exhaust gas holes 4 are distributed only on the outside of the outermost circle of silicon rods. 8 exhaust gas holes 4 are evenly distributed across the mid-span of the outermost circle of silicon rods, thereby reducing the influence of gas phase deviation and ensuring the uniformity of the gas field.

[0041] As a preferred embodiment of this embodiment, in each circle of silicon rods, the center distance between adjacent silicon rods is 240 mm.

[0042] As a preferred embodiment of this embodiment, among the four circles in which 50 pairs of silicon rods are arranged in concentric circles, the diameters of each circle from the inside to the outside are 776 mm, 1534 mm, 2296 mm, and 3058 mm in sequence.

[0043] As a preferred embodiment of this embodiment, among the three circles of nozzles, the diameters of the circles where each circle of nozzles is located from the inside to the outside are 1155 mm, 1915 mm, and 2680 mm in sequence.

[0044] As a preferred embodiment of this embodiment, the diameter of the circle where the exhaust gas holes 4 are located is 3354 mm.

[0045] As a preferred embodiment of this embodiment, the inner diameter of the exhaust hole 4 is 119 mm.

[0046] As a preferred embodiment of this embodiment, the diameter of the chassis 1 is 3650 mm.

[0047] The above has specifically described the embodiments of the present invention, but the present invention is not limited to the above embodiments. Those skilled in the art can also make various equivalent modifications or substitutions without departing from the spirit of the present invention, and these equivalent modifications or substitutions are all included within the scope defined by the claims of the present invention.

Claims

1. A 50-pair rod polysilicon reduction furnace, characterized in that, Including: The body of the reduction furnace; A chassis located inside the body of the reduction furnace; 50 pairs of silicon rods arranged on the chassis, and the 50 pairs of silicon rods are arranged in concentric circles. The arrangement method is as follows: from the inner circle to the outer circle, there are 5 pairs of silicon rods, 10 pairs of silicon rods, 15 pairs of silicon rods, and 20 pairs of silicon rods in sequence; Among them, from the inside to the outside, the 5 pairs of silicon rods in the first circle are the first group of silicon rods, the two groups of 5 pairs of silicon rods in the second circle are the second group of silicon rods and the third group of silicon rods respectively, the three groups of 5 pairs of silicon rods in the third circle are the fourth group of silicon rods, the fifth group of silicon rods and the sixth group of silicon rods respectively, and the 6 pairs of silicon rods, 7 pairs of silicon rods and 7 pairs of silicon rods in the fourth circle are the seventh group of silicon rods, the eighth group of silicon rods and the ninth group of silicon rods respectively. Among the first group of silicon rods to the ninth group of silicon rods, each group of silicon rods corresponds to a phase current and is connected to an electrical control cabinet.

2. The 50-pair rod polysilicon reduction furnace according to claim 1, characterized in that, Nozzles are provided on the chassis. Among them, 1 nozzle is provided at the center of the chassis, 5 nozzles are evenly distributed between the first circle of silicon rods and the second circle of silicon rods, 15 nozzles are evenly distributed between the second circle of silicon rods and the third circle of silicon rods, and 15 nozzles are evenly distributed between the third circle of silicon rods and the fourth circle of silicon rods.

3. A 50-pair rod polysilicon reduction furnace according to claim 1, characterized in that, Tail gas holes are provided on the chassis, and the tail gas holes are distributed only outside the outermost circle of silicon rods.

4. The 50-pair rod polysilicon reduction furnace according to claim 3, wherein, 8 tail gas holes are evenly distributed across the middle of the outermost circle of silicon rods.

5. A 50-pair rod polysilicon reduction furnace as described in claim 1, characterized in that, In each circle of silicon rods, the center distance between adjacent silicon rods is 240 mm.

6. A 50-pair rod polysilicon reduction furnace as described in claim 1, characterized in that, Among the four circles where the 50 pairs of silicon rods are arranged in concentric circles, the diameters of each circle from the inside to the outside are 776 mm, 1534 mm, 2296 mm and 3058 mm in sequence.

7. A 50-pair rod polysilicon reduction furnace according to claim 2, characterized in that Among the three circles of nozzles, the diameters of the circles where each circle of nozzles is located from the inside to the outside are 1155 mm, 1915 mm and 2680 mm in sequence.

8. A 50-pair rod polysilicon reduction furnace according to claim 3, characterized in that, The diameter of the circle where the tail gas holes are located is 3354 mm.

9. A 50-pair rod polysilicon reduction furnace according to claim 3, characterized in that, The inner diameter of the tail gas holes is 119 mm.

10. A 50-pair rod polysilicon reduction furnace as described in claim 1, characterized in that, The diameter of the chassis is 3650 mm.

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