Lower electrode of dry etching machine and dry etching machine
By setting guide grooves on the surface of the earth bank of the electrode under the dry etching machine to increase the roughness, the fragmentation problem caused by the inability to dissipate quickly is solved, and the effect of reducing adhesion and extending the electrode life is achieved.
Patent Information
- Application Number
- CN202422193311.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-06
- Publication Date
- 2025-07-11
- Estimated Expiration
- 2034-09-06
AI Technical Summary
The static electricity cannot dissipate quickly after the process is finished, resulting in the etched parts adsorbing on the soil dam of the lower electrode, which can easily cause the risk of fragmentation. As time goes by, the polishing soil dam cannot meet the demand, and there is still a risk of fragmentation.
A guide groove is provided on the surface of the earth bank of the lower electrode of the dry etching machine away from the base body to increase the roughness of the earth bank, reduce the adhesion between the part to be etched and the earth bank, and reduce the number of polishing times through the guide groove to reduce damage to the lower electrode.
It effectively reduces the adhesion between the etched part and the earth bank, avoids the risk of fragmentation, extends the maintenance time of the lower electrode, reduces the number of polishing times of the earth bank, and reduces the risk of etching product aggregation and corrosion of the dielectric layer.
Smart Images
Figure CN223092811U_ABST
Abstract
Description
Technical Field
[0001] Embodiments of the present utility model relate to the field of semiconductor technology, and in particular to a lower electrode of a dry etching machine and a dry etching machine. Background Art
[0002] A dry etching machine generally includes a vacuum chamber, an upper electrode, a lower electrode, a power supply, and a plasma vacuum discharge region. The upper electrode and the lower electrode are installed in the vacuum chamber, and the power supply is respectively connected to the upper electrode and the lower electrode to provide a voltage, so that a high-voltage electric field is formed between the upper electrode and the lower electrode in the plasma vacuum discharge region. The etching gas forms plasma under the action of the high-voltage electric field to etch the workpiece to be etched.
[0003] After the process is completed, if the remaining static electricity on the lower electrode cannot be quickly dissipated, the workpiece to be etched will be adsorbed on the embankment of the lower electrode. When the workpiece to be etched is lifted by the ejector pin, there is a risk of fragmentation of the workpiece to be etched. To solve the problem of adsorption fragmentation, the prior art usually uses diamond sandpaper to polish the lower embankment. However, as time goes by, the polished embankment gradually fails to meet the requirements, and there is still a risk of fragmentation. Summary of the Utility Model
[0004] Embodiments of the present utility model provide a lower electrode of a dry etching machine and a dry etching machine to solve the problem of easy adsorption fragmentation after the process is completed.
[0005] According to one aspect of the present utility model, a lower electrode of a dry etching machine is provided, including:
[0006] A substrate;
[0007] An electrode layer, the electrode layer is located on one side of the substrate;
[0008] A dielectric layer, the dielectric layer is located on the side of the electrode layer away from the substrate;
[0009] An embankment, the embankment is located on the side of the electrode layer away from the substrate, and the embankment is arranged around the dielectric layer;
[0010] Wherein, at least part of the embankment is provided with a guide groove on the surface on the side away from the substrate.
[0011] Optionally, the guide grooves are provided on the surfaces of the embankments around the dielectric layer on the side away from the substrate;
[0012] The lower electrode further includes an insulating layer, and the insulating layer is located on the side of the electrode layer close to the substrate.
[0013] Optionally, the guide groove is in a zigzag or comb shape;
[0014] The cross-sectional shape of the guide groove includes at least one of a trapezoid, a triangle, and a rectangle.
[0015] Optionally, along the thickness direction of the lower electrode, the grooving depth of the guide groove is 2 mm to 3 mm.
[0016] Optionally, the earthen embankment includes a plurality of convex structures, and the guide groove is formed between two adjacent convex structures;
[0017] Along the extension direction of the earthen embankment, the width of the surface of the convex structure on the side away from the substrate is 0.8 mm to 1.2 mm.
[0018] Optionally, on the side close to the substrate, the bottom angle of the convex structure is an acute angle;
[0019] The angle of the bottom angle of the convex structure is between 40° and 50°.
[0020] Optionally, the guide grooves are arranged at equal intervals on the earthen embankment.
[0021] Optionally, the earthen embankment and the dielectric layer are an integral structure, and the roughness of the earthen embankment is greater than the roughness of the dielectric layer;
[0022] The roughness of the earthen embankment is greater than 1 μm.
[0023] Optionally, the lower electrode further includes an electrode post, and the electrode post penetrates through the substrate and is connected to the electrode layer;
[0024] The lower electrode further includes a first through hole, and the first through hole penetrates through the lower electrode to introduce a purge gas;
[0025] The lower electrode further includes a second through hole, the second through hole penetrates through the lower electrode, a thimble is arranged in the second through hole, and the second through hole is located on the earthen embankment or at the connection between the earthen embankment and the dielectric layer.
[0026] According to another aspect of the present invention, a dry etching machine is provided, and the dry etching machine includes the lower electrode of the dry etching machine according to any embodiment of the present invention;
[0027] The dry etching machine further includes an upper electrode, and both the lower electrode and the upper electrode are located in a vacuum chamber;
[0028] The dry etching machine further includes an insulating edge strip, the substrate of the lower electrode includes a step structure, the insulating edge strip is located on the step structure, and the insulating edge strip surrounds the earthen embankment.
[0029] The lower electrode of the dry etching machine provided by the embodiment of the present utility model is provided with a guiding groove on the surface of the embankment away from the substrate, so that the surface of the embankment is no longer a smooth plane, thereby increasing the roughness of the embankment, so as to reduce the adhesion between the embankment and the workpiece to be etched, and avoid the risk of fragmentation of the workpiece to be etched. Moreover, due to the existence of the guiding groove, the polishing times of the embankment can be reduced, the damage to the lower electrode can be alleviated, and it is beneficial to extend the maintenance time of the lower electrode.
[0030] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present utility model, nor is it used to limit the scope of the present utility model. Other features of the present utility model will become easily understood through the following description. Description of the Drawings
[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present utility model, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present utility model, and for those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0032] Figure 1 It is a top view structural schematic diagram of a lower electrode of a dry etching machine provided by an embodiment of the present utility model;
[0033] Figure 2 It is a cross-sectional structural schematic diagram of a lower electrode of a dry etching machine provided by an embodiment of the present utility model;
[0034] Figure 3 It is a structural schematic diagram of a guiding groove provided by an embodiment of the present utility model;
[0035] Figure 4 It is a structural schematic diagram of another guiding groove provided by an embodiment of the present utility model;
[0036] Figure 5 It is a top view structural schematic diagram of a lower electrode of a dry etching machine provided by an embodiment of the present utility model;
[0037] Figure 6 It is a cross-sectional structural schematic diagram of a lower electrode of a dry etching machine provided by an embodiment of the present utility model;
[0038] Figure 7 It is a top view structural schematic diagram of another lower electrode of a dry etching machine provided by an embodiment of the present utility model;
[0039] Figure 8 It is a cross-sectional structural schematic diagram of another lower electrode of a dry etching machine provided by an embodiment of the present utility model;
[0040] Figure 9A structural schematic diagram of a dry etching machine provided by an embodiment of the present utility model.
[0041] Among them, the reference numerals are explained as follows:
[0042] 100 - workpiece to be etched; 11 - guide groove;
[0043] 101 - substrate; 102 - electrode layer; 103 - dielectric layer; 104 - insulating layer; 105 - embankment; 106 - electrode post;
[0044] 211 - first through - hole; 212 - second through - hole; 213 - ejector pin (first ejector pin); 214 - second ejector pin;
[0045] 301 - insulating edge strip;
[0046] 10 - lower electrode; 20 - upper electrode; 30 - vacuum chamber; 40 - lower electrode base. Detailed implementation manners
[0047] In order to enable those skilled in the art to better understand the solution of the present utility model, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present utility model.
[0048] It should be noted that the terms "first", "second", etc. in the description and claims of the present utility model and the above - mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that such used data can be interchanged under appropriate circumstances so that the embodiments of the present utility model described here can be implemented in an order different from those illustrated or described here. In addition, the terms "include" and "have" and any variations thereof are intended to cover non - exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.
[0049] Figure 1 A top - view structural schematic diagram of a lower electrode of a dry etching machine provided by an embodiment of the present utility model, Figure 2 A cross - sectional structural schematic diagram of a lower electrode of a dry etching machine provided by an embodiment of the present utility model, specifically Figure 1 The cross - sectional structure obtained by cutting the lower electrode along the cutting line AA', where the X - direction and the Y - direction are both horizontal directions, and the Z - direction is the vertical direction. CombiningFigure 1 and Figure 2 , the lower electrode of the dry etching machine provided in this embodiment includes:
[0050] Substrate 101;
[0051] Electrode layer 102, the electrode layer 102 is located on one side of the substrate 101;
[0052] Dielectric layer 103, the dielectric layer 103 is located on the side of the electrode layer 102 away from the substrate 101;
[0053] Embankment 105, the embankment 105 is located on the side of the electrode layer 102 away from the substrate 101, and the embankment 105 is arranged around the dielectric layer 103;
[0054] Among them, at least part of the embankment 105 is provided with a guide groove 11 on the surface on the side away from the substrate 101.
[0055] Specifically, the lower electrode can be used in a dry etching machine. Dry etching is an etching technique that uses plasma to etch thin films. Since dry etching mainly uses particle bombardment for etching, the etching rate in the vertical direction is greater than that in the horizontal direction. Therefore, dry etching is usually used for anisotropic etching.
[0056] Among them, the lower electrode includes a stacked substrate 101, an electrode layer 102 and a dielectric layer 103. The substrate 101 is usually made of aluminum or other metal materials. The electrode layer 102 is a tungsten layer. The dielectric layer 103 can be a ceramic layer for protecting the electrode layer 102. An insulating layer 104 is also provided between the substrate 101 and the metal material 102 to insulate the substrate 101 from the metal material 102 and prevent short circuit between the two. The electrode layer 102 can be used to provide an electrostatic attraction after applying a voltage to adsorb the workpiece to be etched 100. Here, the workpiece to be etched 100 is usually a glass substrate.
[0057] An embankment 105 is arranged around the dielectric layer 103. The height of the embankment 105 is higher than that of the dielectric layer 103 so that the embankment 105 can support the workpiece to be etched 100. At the same time, the embankment 105 can be sealed with the workpiece to be etched 100 to prevent excessive overflow of the purge gas. In this embodiment, at least part of the embankment 105 is provided with a guide groove 11 on the surface on the side away from the substrate 101. The sharp edges on the guide groove 11 can increase the roughness of the embankment 105, thereby reducing the adhesion between the embankment 105 at the lower electrode and the workpiece to be etched 100 and avoiding the risk of fragmentation of the workpiece to be etched 100.
[0058] The lower electrode of the dry etching machine provided by the embodiment of the present utility model is provided with a guide groove 11 on the surface of the earth embankment 105 away from the substrate 101, so that the surface of the earth embankment 105 is no longer a smooth plane, thereby increasing the roughness of the earth embankment 105, so as to reduce the adhesion between the earth embankment 105 and the workpiece to be etched 100 and avoid the risk of fragmentation of the workpiece to be etched 100. And due to the existence of the guide groove 11, the polishing times of the earth embankment 105 can be reduced, the damage to the lower electrode can be alleviated, and it is beneficial to extend the maintenance time of the lower electrode.
[0059] Optionally, guide grooves 11 are provided on the surfaces of the earth embankments 105 around the dielectric layer 103 away from the substrate 101 to ensure the balance of the adhesion between the earth embankments 105 and the workpiece to be etched 100 and avoid the risk of fragmentation caused by inconsistent adhesion at different positions of the earth embankments 105.
[0060] Optionally, the insulating layer 104 on the side of the electrode layer 102 close to the substrate 101 can be made of alumina.
[0061] Figure 3 It is a schematic structural diagram of a guide groove provided by the embodiment of the present utility model. Figure 4 It is another schematic structural diagram of a guide groove provided by the embodiment of the present utility model. Refer to Figure 3 and Figure 4 , on the basis of the above embodiment, optionally, the guide groove 11 is serrated (as shown in Figure 3 ) or comb-shaped (as shown in Figure 4 ), and the cross-sectional shape of the guide groove 11 includes at least one of a trapezoid, a triangle, and a rectangle.
[0062] Specifically, the guide groove 11 includes a plurality of convex structures 12, and a guide groove 11 is formed between two adjacent convex structures 12. Since the guide groove 11 has edges and corners (i.e., the edges and corners of the convex structures 12), the surface of the earth embankment 105 is no longer a smooth plane, so that the roughness of the surface of the earth embankment 105 can be increased, and further the adhesion between the workpiece to be etched 100 and the earth embankment 105 can be reduced.
[0063] As a preferred embodiment provided by this embodiment, the guide groove 11 is serrated. On the side close to the substrate 101, the bottom angle a of the convex structure 12 is an acute angle, and the angle of the bottom angle a of the convex structure 12 is between 40° and 50°. The advantage of such a design is that the contact area between the workpiece to be etched 100 and the top of the convex structure 12 can be made smaller, which is beneficial to further reducing the adhesion between the workpiece to be etched 100 and the earth embankment 105. And the serrated guide groove 11 is easier to clean, which is beneficial to reducing the accumulation of etching products, thereby reducing the risk of corrosion of the dielectric layer 103 on the surface of the lower electrode.
[0064] Optionally, in a specific embodiment, along the thickness direction of the lower electrode (i.e., the Z direction), the grooving depth of the guide groove 11 is 2 mm to 3 mm, that is, H1 is 2 mm to 3 mm. Among them, the thickness of the dielectric layer 103 is relatively thin. By controlling the grooving depth of the guide groove 11 to be 2 mm to 3 mm, on the basis of effectively increasing the roughness of the embankment 105, it can ensure that the thickness of the embankment 105 below the guide groove 11 can meet the etching requirements, and avoid damage to the electrode layer 102 by the plasma in the process.
[0065] Optionally, along the extending direction of the embankment 105, the width of the surface of the convex structure 12 away from the substrate 101 is 0.8 mm to 1.2 mm, that is, H2 is 0.8 mm to 1.2 mm. For example, in Figure 1 H3 is the width of the embankment 105. Among them, the extending direction of the embankment 105 refers to the X direction or the Y direction, and on different sides, the extending direction of the embankment 105 is also different. For example, on the left and right sides of the lower electrode, the extending direction of the embankment 105 is the Y direction; on the upper and lower sides of the lower electrode, the extending direction of the embankment 105 is the X direction.
[0066] Specifically, by controlling the width of the surface of the convex structure 12 away from the substrate 101 to be 0.8 mm to 1.2 mm, on the basis of effectively increasing the roughness of the embankment 105, it can ensure that there is enough contact area between the embankment 105 and the workpiece to be etched 100, so as to play a good supporting role.
[0067] Optionally, continue to refer to Figure 2 and Figure 3 , the embankment 105 and the dielectric layer 103 are of an integral structure, and the guide grooves 11 are arranged at equal intervals on the embankment 105, so that the convex structures 12 are evenly distributed on the embankment 105, which is beneficial to balancing the adhesion of the embankment 105. Among them, the roughness of the embankment 105 is greater than that of the dielectric layer 103. The roughness of the embankment 105 is greater than 1 μm. In this embodiment, after the guide grooves 11 are formed on the embankment 105 by using the above parameters, the roughness of the embankment 105 is between 1.8 and 2.5 μm, meeting the requirement for the roughness of the embankment 105 to solve the problem of fragments.
[0068] Optionally, the guide groove 11 and the embankment 105 are of an integral structure, and the guide groove 11 can be formed by grooving on the embankment 105.
[0069] Figure 5 This is a top view structural schematic diagram of a lower electrode of a dry etching machine provided by an embodiment of the present invention. Figure 6 This is a cross-sectional structural schematic diagram of a lower electrode of a dry etching machine provided by an embodiment of the present invention, specifically Figure 5 the cross-sectional structure obtained by cutting the lower electrode along the cutting line BB'. Figure 7Another top view structural schematic diagram of the lower electrode of the dry etching machine provided by the embodiment of the present invention, Figure 8 Another cross-sectional structural schematic diagram of the lower electrode of the dry etching machine provided by the embodiment of the present invention, specifically Figure 7 The cross-sectional structure obtained by cutting the lower electrode along the cutting line CC', where Figure 5 and Figure 7 The difference between the lower electrodes shown is the setting position of the second through hole 212. Refer to Figures 5 to 8 , on the basis of the above embodiments, optionally, the lower electrode further includes an electrode post 106, and the electrode post 106 penetrates through the substrate 101 and is connected to the electrode layer 102 to provide a DC voltage for the electrode layer 102.
[0070] Optionally, the lower electrode further includes a first through hole 211, and the first through hole 211 penetrates through the lower electrode to introduce a purge gas to cool the workpiece to be etched 100 during the etching process.
[0071] Optionally, the lower electrode further includes a second through hole 212, and the second through hole 212 penetrates through the lower electrode, and a thimble 213 is arranged in the second through hole 212. Among them, the second through hole 212 is located on the embankment 105 (as shown in Figure 5 ), or the second through hole 212 is located at the connection between the embankment 105 and the dielectric layer 103 (as shown in Figure 7 ).
[0072] It should be noted that when the second through hole 212 is located on the embankment 105, the guide groove 11 is not provided at the position corresponding to the second through hole 212.
[0073] Specifically, in the dry etching process, the workpiece to be etched 100 is placed on the first electrode, the electrostatic voltage is turned on, and the first electrode generates an electrostatic attraction force to attract the workpiece to be etched 100, and the purge gas starts to purge the workpiece to be etched 100 through the second through hole 212. Since the purge gas generates an upward blowing force on the workpiece to be etched 100, therefore, the downward electrostatic attraction force can balance the blowing force received by the workpiece to be etched 100 to maintain the balance of the workpiece to be etched 100. Among them, the flow direction of the purge gas on the back of the workpiece to be etched 100 diffuses outward along the surface of the lower electrode. Then plasma etching is carried out, and the purge gas is continuously output. When the plasma etching process ends, the electrostatic voltage is turned off, and the purge gas is quickly pumped away. Among them, the purge gas can be He gas.
[0074] In this embodiment, since the guiding groove 11 is provided on the earth embankment 105, the surface of the earth embankment 105 is no longer a smooth plane, thereby increasing the roughness of the earth embankment 105 to reduce the adhesion between the earth embankment 105 and the component to be etched 100. When the component to be etched 100 is lifted and discharged by the ejector pin 213 subsequently, due to the reduced adhesion between the earth embankment 105 and the component to be etched 100, the adsorption force between the earth embankment 105 and the component to be etched 100 is greatly reduced. At the same time, the residual purging gas can promote the separation between the earth embankment 105 and the component to be etched 100, avoiding the phenomenon of adsorbed fragments, greatly improving the yield of the component to be etched 100, and effectively avoiding the problem of the ejector pin 212 being broken. In addition, due to the existence of the guiding groove 11, the contact points between the earth embankment 105 and the component to be etched 100 are reduced, and the residual purging gas can be directly evacuated along the guiding groove 11, effectively avoiding the phenomenon of "air trapping" caused by the inability of the residual gas to flow out quickly, thereby greatly reducing the risk of the component to be etched 100 bulging.
[0075] Optionally, the embodiment of the present utility model further provides a dry etching machine, which includes the lower electrode of the dry etching machine provided in any embodiment of the present utility model. Figure 9 It is a schematic structural diagram of a dry etching machine provided by an embodiment of the present utility model. Refer to Figure 9 , this dry etching machine further includes an upper electrode 20. The upper electrode 20 and the lower electrode 10 are both located in the vacuum chamber 30. The upper electrode 20 and the lower electrode 10 are arranged oppositely. The upper electrode 20 and the lower electrode 10 are used to generate an electric field according to the voltages applied respectively, providing necessary conditions for the generation of plasma. The vacuum chamber 30 is an etching chamber, and plasma is generated in the vacuum chamber 30 to etch the component to be etched 100. Among them, the lower electrode base 40 is used to support the lower electrode.
[0076] Optionally, the dry etching machine provided in this embodiment further includes a second ejector pin 214 (taking the ejector pin 213 as the first ejector pin), and the second ejector pin 214 is used to export the component to be etched 100 lifted by the ejector pin 213 from the vacuum chamber 30.
[0077] Continuing to refer to Figures 5 to 8 , the dry etching machine further includes an insulating edge strip 301. The base body 101 of the lower electrode includes a stepped structure. The insulating edge strip 301 is located on the stepped structure and the insulating edge strip 301 is arranged around the earth embankment 105. Among them, the insulating edge strip 301 covers the stepped structure, preventing the base body 101 from being exposed in the vacuum chamber 30, and can reduce the damage of the plasma to the base body 101. Optionally, the insulating edge strip 301 can be made of ceramics.
[0078] Since the dry etching machine provided in this embodiment includes the lower electrode of the dry etching machine provided in any of the above embodiments, the dry etching machine provided in this embodiment also has the beneficial effects described in any of the above embodiments, which will not be elaborated here.
[0079] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in the present utility model can be executed in parallel, sequentially, or in different orders, as long as the desired results of the technical solution of the present utility model can be achieved, and no limitation is imposed herein.
[0080] The above specific embodiments do not constitute a limitation on the protection scope of the present utility model. Those skilled in the art should understand that various modifications, combinations, sub - combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present utility model shall be included within the protection scope of the present utility model.
Claims
1. A lower electrode of a dry etching machine, characterized in that, Comprising: Substrate; Electrode layer, the electrode layer being located on one side of the substrate; Dielectric layer, the dielectric layer being located on the side of the electrode layer away from the substrate; Earth embankment, the earth embankment being located on the side of the electrode layer away from the substrate, and the earth embankment being arranged around the dielectric layer; Wherein, at least part of the earth embankment is provided with a guiding groove on the surface on the side away from the substrate.
2. The lower electrode of the dry etching machine according to claim 1, wherein The guiding grooves are provided on the surfaces of the earth embankment on the side away from the substrate around the dielectric layer; The lower electrode further includes an insulating layer, the insulating layer being located on the side of the electrode layer close to the substrate.
3. The lower electrode of the dry etching machine according to claim 1, wherein The guiding groove is serrated or comb-shaped; The cross-sectional shape of the guiding groove includes at least one of trapezoid, triangle, and rectangle.
4. The lower electrode of the dry etching machine according to claim 1, characterized in that, In the direction of the thickness of the lower electrode, the grooving depth of the guiding groove is 2 mm to 3 mm.
5. The lower electrode of the dry etching machine according to claim 1, characterized in that, The earth embankment includes a plurality of protruding structures, and the guiding grooves are formed between adjacent two of the protruding structures; In the extending direction of the earth embankment, the width of the surface of the protruding structure on the side away from the substrate is 0.8 mm to 1.2 mm.
6. The lower electrode of the dry etching machine according to claim 5, characterized in that On the side close to the substrate, the bottom angle of the protruding structure is an acute angle; The angle of the bottom angle of the protruding structure is between 40° and 50°.
7. The lower electrode of the dry etching machine according to claim 1, characterized in that, The guiding grooves are arranged at equal intervals on the earth embankment.
8. The lower electrode of the dry etching machine according to claim 1, characterized in that The earth embankment and the dielectric layer are of an integral structure, and the roughness of the earth embankment is greater than the roughness of the dielectric layer; The roughness of the earth embankment is greater than 1 μm.
9. The lower electrode of the dry etching machine according to claim 1, characterized in that The lower electrode further includes an electrode post, the electrode post penetrating through the substrate and being connected to the electrode layer; The lower electrode further includes a first through hole, the first through hole penetrating through the lower electrode to introduce a purging gas; The lower electrode further includes a second through hole, the second through hole penetrating through the lower electrode, a thimble being arranged in the second through hole, the second through hole being located on the earth embankment or at the connection between the earth embankment and the dielectric layer.
10. A dry etching machine, characterized in that, Comprising the lower electrode of a dry etching machine according to any one of claims 1-9; The dry etching machine further includes an upper electrode, both the lower electrode and the upper electrode being located in a vacuum chamber; The dry etching machine further includes an insulating edge strip, the substrate of the lower electrode including a stepped structure, the insulating edge strip being located on the stepped structure and the insulating edge strip being arranged around the earth embankment.