Thin film capacitor
By arranging metal grids to connect non-high resistance regions with high resistance regions in capacitors, the design minimizes capacity loss from defects, improving reliability and durability.
Patent Information
- Application Number
- CN202422009979.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-19
- Publication Date
- 2025-07-15
- Estimated Expiration
- 2034-08-19
AI Technical Summary
During the evaporation process, existing metallized film capacitors have large capacity losses or fast attenuation due to defects in the connection area between the thickened zone and the non-thickened zone, which cannot meet the usage requirements.
By setting up a metal grid between the non-high-quad-resistance area of the metal plating layer and connecting it through a fuse, the capacitor capacity loss caused by defect self-healing is reduced and the reliability of the capacitor is improved.
It effectively reduces the capacitor capacity loss due to evaporation tooling deviation and parameter deviation, and improves the reliability of the capacitor.
Smart Images
Figure CN223108686U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of capacitors, and particularly relates to a film capacitor. Background Art
[0002] Metallized film capacitors are increasingly widely used in the fields of industrial control, new energy, automotive electronics, rail transit, power grids, etc. At the same time, the failure safety problem of metallized film capacitors is becoming more and more prominent. Metallized film capacitors are formed by winding metallized films in pairs to improve safety. In related technologies, various metallized films have been developed, but existing metallized film capacitors still have problems of large capacity loss or fast attenuation, and cannot meet the use requirements.
[0003] Among them, the metal coating of the metallized film is provided with a thickened area, that is, a non-high sheet resistance area, to pass a large current and play a role in sealing and moisture-proof during winding and encapsulation. There is a height difference between the thickened area of the metal coating and the non-thickened area, that is, the high sheet resistance area. Since the dielectric film is prone to defects in the thickened area of the metal coating and the connection area between the thickened area and the non-thickened area during the processes of metal film evaporation and slitting, the non-thickened area of the metal coating of another metallized film is easily broken down, resulting in capacity loss. That is, due to the deviation of the evaporation tooling and the parameter deviation during the evaporation process, the metal in the thickened area (non-high sheet resistance area) diffuses to the non-thickened area (high sheet resistance area), and defects are generated in the connection area between the thickened area and the non-thickened area, making the non-thickened area of the metal coating of another metallized film easily broken down, resulting in capacity loss. Summary of the Utility Model
[0004] The utility model aims to at least solve one of the technical problems in the above technologies to some extent. For this purpose, the purpose of the utility model is to provide a film capacitor. Through the layout of the metal grid positions, the connection area between the non-high sheet resistance area and the high sheet resistance area of one metal coating corresponds to at least one-order metal film grid area of the non-high sheet resistance area of another metal coating, reducing the capacitor capacity loss caused by defect self-healing in the grid area of the other metal coating and improving the reliability of the capacitor.
[0005] To achieve the above object, an embodiment of the utility model provides a film capacitor, including a dielectric film, a first metal coating, and a second metal coating; the first metal coating covers the first film surface of the dielectric film, and the second metal coating covers the second film surface of the dielectric film;
[0006] The first metal coating is provided with a non-high sheet resistance region and a high sheet resistance region connected to the non-high sheet resistance region. The second metal coating is provided with a high sheet resistance region or a non-high sheet resistance region and a high sheet resistance region connected to the non-high sheet resistance region. A metal grid surrounded by a transverse insulation gap and a longitudinal insulation gap is formed on the high sheet resistance region, and the metal grids are connected by fuses;
[0007] The non-high sheet resistance region of the first metal coating faces the high sheet resistance region of the second metal coating. The non-high sheet resistance region and the high sheet resistance region connection region of the first metal coating, and the non-high sheet resistance region correspond to at least one-order metal film grid region of the second metal coating. The non-high sheet resistance region and the high sheet resistance region connection region is the connection line of the non-high sheet resistance region and the high sheet resistance region extending along the film width direction to the high sheet resistance region, and the width of the non-high sheet resistance region and the high sheet resistance region connection region along the film width is 0-6 mm;
[0008] The edge of the non-high sheet resistance region and the high sheet resistance region connection region of the first metal coating close to the high sheet resistance region is opposite to the longitudinal insulation gap of the metal grid of the second metal coating.
[0009] In a thin film capacitor according to an embodiment of the present invention, since the non-high sheet resistance region and the high sheet resistance region connection region of the first metal coating, and the non-high sheet resistance region correspond to at least one-order metal film grid region of the second metal coating, and the width of the non-high sheet resistance region and the high sheet resistance region connection region along the film width is 0-6 mm, due to the deviation of the evaporation tooling and the parameter deviation during the evaporation process, the metal in the non-high sheet resistance region will diffuse towards the high sheet resistance region, and it is easy to generate defects in the non-high resistance region of the metal coating and the non-high sheet resistance region and the high sheet resistance region connection region. When the high sheet resistance region of another metal coating is broken down, only the capacity of one-order metal grid is lost, reducing the capacitor capacity loss caused by defect self-healing in the grid region of another metal coating, and improving the reliability of the capacitor.
[0010] In addition, a thin film capacitor according to the above embodiment of the present invention may further have the following additional technical features:
[0011] Optionally, the width of the non-high sheet resistance region and the high sheet resistance region connection region along the film width is 0-2 mm.
[0012] Optionally, the width of the non-high sheet resistance region and the high sheet resistance region connection region along the film width is 2-4 mm.
[0013] Optionally, the width of the non-high sheet resistance region and the high sheet resistance region connection region along the film width is 4-6 mm.
[0014] Specifically, the width of the non-high sheet resistance region and the high sheet resistance region connection region along the film width is 6 mm.
[0015] Optionally, both the first metal coating and the second metal coating are provided with a non-high sheet resistance region and a high sheet resistance region connected to the non-high sheet resistance region.
[0016] Specifically, the non-high sheet resistance region is provided at one end of the film width direction and extends along the film length direction.
[0017] Optionally, non-high sheet resistance regions are respectively provided at both ends of the first metal coating in the film width direction and extend along the film length direction, and a margin is provided in the middle of the film width; the second metal coating is provided with a high sheet resistance region.
[0018] Optionally, both the first metal coating and the second metal coating are provided with at least two adjacent non-high sheet resistance regions and high sheet resistance regions connected to the non-high sheet resistance regions.
[0019] Specifically, the at least two adjacent non-high sheet resistance regions are provided at one end of the film width direction and extend along the film length direction.
[0020] Optionally, the first metal coating is vapor-deposited on the front surface of the dielectric film, and the second metal coating is vapor-deposited on the back surface of the dielectric film. Description of the Drawings
[0021] Figure 1 It is a schematic structural diagram of the first embodiment of the present invention;
[0022] Figure 2 It is another schematic structural diagram of the first embodiment of the present invention;
[0023] Figure 3 It is a schematic structural diagram of the second embodiment of the present invention;
[0024] Figure 4 It is a schematic structural diagram of the third embodiment of the present invention.
[0025] Description of Reference Numerals
[0026] First metallization film 1, second metallization film 2, non-high sheet resistance regions (11, 21), high sheet resistance regions (12, 22), margins (13, 23), metal grids (14, 24), transverse insulation gaps (141, 241), longitudinal insulation gaps (142, 242), fuses (15, 25). Detailed Embodiments
[0027] The embodiments of the present invention will be described in detail below. Examples of the embodiments are shown in the drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.
[0028] To better understand the above technical solution, the exemplary embodiments of the present utility model will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present utility model are shown in the drawings, it should be understood that the present utility model can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present utility model can be more thoroughly understood and the scope of the present utility model can be completely conveyed to those skilled in the art.
[0029] An embodiment of the present utility model provides a thin film capacitor, which includes a dielectric film, a first metal coating, and a second metal coating; the first metal coating covers the first film surface of the dielectric film, and the second metal coating covers the second film surface of the dielectric film.
[0030] The first metal coating is provided with a non-high sheet resistance region and a high sheet resistance region connected to the non-high sheet resistance region, the second metal coating is provided with a high sheet resistance region or a non-high sheet resistance region and a high sheet resistance region connected to the non-high sheet resistance region, and a metal grid surrounded by a transverse insulating gap and a longitudinal insulating gap is formed on the high sheet resistance region, and the metal grids are connected by fuses.
[0031] The non-high sheet resistance region of the first metal coating is opposite to the high sheet resistance region of the second metal coating, the connection region between the non-high sheet resistance region and the high sheet resistance region of the first metal coating, and the non-high sheet resistance region correspond to at least one order of metal film grid region of the second metal coating. The connection region between the non-high sheet resistance region and the high sheet resistance region is the connection line between the non-high sheet resistance region and the high sheet resistance region extending along the film width direction to the high sheet resistance region, and the width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 0-6 mm.
[0032] The edge of the connection region between the non-high sheet resistance region and the high sheet resistance region of the first metal coating close to the high sheet resistance region is opposite to the longitudinal insulating gap of the metal grid of the second metal coating, so as to minimize the capacitor capacity loss caused by capacitor self-healing and improve the reliability of the capacitor.
[0033] Since the non-high sheet resistance region of the first metal coating is connected to the high sheet resistance region, and the at least one-order metal film grid region of the second metal coating corresponds to the non-high sheet resistance region, and the width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 0-6 mm, due to the deviation of the evaporation tooling and the parameter deviation during the evaporation process, the metal in the non-high sheet resistance region will diffuse towards the high sheet resistance region, which is likely to cause defects in the non-high resistance region of the metal coating and the connection region between the non-high sheet resistance region and the high sheet resistance region. When breaking down the high sheet resistance region of the other metal coating, only the capacity of one-order metal grid is lost, reducing the capacitor capacity loss caused by defect self-healing in the grid region of the other metal coating and improving the reliability of the capacitor.
[0034] Optionally, the width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 0-2 mm; or the width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 2-4 mm; or the width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 4-6 mm. Preferably, the width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 6 mm.
[0035] Specifically, for a capacitor with a film width of 50 mm, only one non-high sheet resistance region (thickened region) is set at the edge of the film width. The length of the non-high sheet resistance region along the film width direction is 3 mm, and the width of the grid unit along the film length direction is 3 mm.
[0036] For the capacitor of Scheme A, the longitudinal insulation gap of the metal grid of one of the metallized films is set at 2 mm in the direction extending from the connection position between the non-high sheet resistance region (thickened region) and the high sheet resistance region of the other metallized film to the high sheet resistance region, and only one-order grid is set, and the number of capacitors is 10.
[0037] For the capacitor of Scheme B, the longitudinal insulation gap of the metal grid of one of the metallized films is set at 4 mm in the direction extending from the connection position between the non-high sheet resistance region (thickened region) and the high sheet resistance region of the other metallized film to the high sheet resistance region, and only one-order grid is set, and the number of capacitors is 10.
[0038] For the capacitor of Scheme C, the longitudinal insulation gap of the metal grid of one of the metallized films is set at 6 mm in the direction extending from the connection position between the non-high sheet resistance region (thickened region) and the high sheet resistance region of the other metallized film to the high sheet resistance region, and only one-order grid is set, and the number of capacitors is 10.
[0039] For the capacitor of Scheme D, the longitudinal insulation gap of the metal grid of one of the metallized films is set at 7 mm in the direction extending from the connection position between the non-high sheet resistance region (thickened region) and the high sheet resistance region of the other metallized film to the high sheet resistance region, and only one-order grid is set, and the number of capacitors is 10.
[0040] After 105 c - 250 v / um - 1000 h durability, the capacitance loss rate of the capacitor is as follows:
[0041]
[0042] Example 1
[0043] As Figure 1 shown, a thin film capacitor according to Embodiment 1 of the present utility model is formed by winding a metallized film, that is, formed by winding a first metallized film 1 and a second metallized film 2. The two metallized films have the same structure. The first metallized film 1 and the second metallized film 2 are respectively composed of a dielectric film and a metal coating vapor-deposited on the dielectric film. Specifically, the first metallized film 1 is composed of a first metal coating covering a first dielectric thin film, and the second metallized film 2 is composed of a second metal coating covering a second dielectric thin film.
[0044] Both the first metal coating of the first metallized film 1 and the second metal coating of the second metallized film 2 are provided with non-high sheet resistance regions (11, 21) and high sheet resistance regions (12, 22) connected to the non-high sheet resistance regions (11, 21). Specifically, the non-high sheet resistance regions (11, 21) are arranged at one end of the film width direction and extend along the film length direction.
[0045] The other ends of the first metallized film 1 and the second metallized film 2 opposite to the side where the non-high sheet resistance regions (11, 21) are provided are respectively provided with margins (13, 23). When the first metallized film 1 and the second metallized film 2 are paired and wound, the first metallized film 1 and the second metallized film 2 are misaligned. The non-high sheet resistance region 11 of the first metallized film 1 is misaligned with the margin 23 of the second metallized film 2, and the non-high sheet resistance region 21 of the second metallized film 2 is misaligned with the margin 13 of the first metallized film 1.
[0046] A metal grid (14, 24) surrounded by transverse insulation gaps (141, 241) and longitudinal insulation gaps (142, 242) is formed on the high sheet resistance regions (12, 22), and the metal grids (14, 24) are connected by fuses (15, 25).
[0047] The non-high sheet resistance region 11 of the first metal coating of the first metallized film 1 is opposite to the high sheet resistance region 22 of the second metal coating of the second metallized film 2, and the connection region between the non-high sheet resistance region 11 and the high sheet resistance region 12 of the first metallized film 1 corresponds to the first-order metal grid 24 region of the second metallized film 2.
[0048] Specifically, starting from the end position of the non-high-resistance region 11 of the first metal plating layer of the first metallization film 1, within 6 mm in the direction of the high-resistance region 12, it corresponds to the high-resistance region 22 of the second metallization film 2. A longitudinal insulation gap 242 is provided within the high-resistance region 22, and at least one metal grid 24 is provided in the region between the longitudinal insulation gap 242 and the margin 23 along the film width direction.
[0049] As Figure 2 shown, the first metallization film 1 and the second metallization film 2 share a dielectric film, that is, metal plating layers are respectively vapor-deposited on the front and back surfaces of the dielectric film. Specifically, the first metal plating layer is vapor-deposited on the front surface of the dielectric thin film, and the second metal plating layer is vapor-deposited on the back surface of the dielectric thin film.
[0050] Embodiment 2
[0051] As Figure 3 shown, a thin film capacitor according to Embodiment 2 of the present utility model is formed by winding metallization films, that is, formed by winding the first metallization film 1 and the second metallization film 2. The first metallization film 1 and the second metallization film 2 are respectively composed of a dielectric film and a metal plating layer vapor-deposited on the dielectric film. Specifically, the first metallization film 1 is composed of the first metal plating layer covering the first dielectric thin film, and the second metallization film 2 is composed of the second metal plating layer covering the second dielectric thin film. Of course, the first metallization film 1 and the second metallization film 2 can share a dielectric film, that is, metal plating layers are respectively vapor-deposited on the front and back surfaces of the dielectric film. Specifically, the first metal plating layer is vapor-deposited on the front surface of the dielectric thin film, and the second metal plating layer is vapor-deposited on the back surface of the dielectric thin film.
[0052] Non-high-resistance regions 11 are respectively provided at both end portions in the film width direction of the first metallization film 1 and extend along the film length direction. A margin 13 is provided in the middle of the film width of the first metallization film 1. The second metallization film 2 is provided with a high-resistance region 22. Margins 23 are respectively provided at both end portions of the second metallization film 2. The high-resistance region 22 is between the two margins 23. Metal grids (14, 24) surrounded by transverse insulation gaps (141, 241) and longitudinal insulation gaps (142, 242) are formed on the high-resistance regions (12, 22). The metal grids (14, 24) are connected by fuses (15, 25).
[0053] The non-high-resistance region 11 of the first metal plating layer of the first metallization film 1 is opposite to the high-resistance region 22 of the second metal plating layer of the second metallization film 2, and the connection region between the non-high-resistance region 11 and the high-resistance region 12 of the first metallization film 1 corresponds to the first-order metal grid 24 region of the second metallization film 2.
[0054] Specifically, the non-high sheet resistance regions 11 on both sides of the first metallization film 1 are respectively connected to the high sheet resistance region 12. Taking the end position of the non-high sheet resistance region 11 as the starting point, that is, taking the connection position of the non-high sheet resistance region 11 and the high sheet resistance region 12 as the starting point, within 6 mm in the direction of the high sheet resistance region 12, corresponding to the high sheet resistance region 22 of the second metallization film 2. A longitudinal insulation gap 242 is provided in the high sheet resistance region 22, and at least one metal grid 24 is provided in the region between the longitudinal insulation gap 242 and the margin 23 along the film width direction.
[0055] Embodiment III
[0056] As Figure 4 As shown, a thin film capacitor according to Embodiment III of the present utility model is formed by winding metallization films, that is, formed by winding the first metallization film 1 and the second metallization film 2. The first metallization film 1 and the second metallization film 2 have the same structure. The first metallization film 1 and the second metallization film 2 are respectively composed of a dielectric film and a metal coating vapor-deposited on the dielectric film. Specifically, the first metallization film 1 is composed of a first metal coating covering the first dielectric thin film, and the second metallization film 2 is composed of a second metal coating covering the second dielectric thin film. Of course, the first metallization film 1 and the second metallization film 2 can share the dielectric film, that is, metal coatings are vapor-deposited on the front and back surfaces of the dielectric film respectively. Specifically, the first metal coating is vapor-deposited on the front surface of the dielectric thin film, and the second metal coating is vapor-deposited on the back surface of the dielectric thin film.
[0057] Both the first metal coating and the second metal coating are provided with at least two adjacent non-high sheet resistance regions 11 and high sheet resistance regions 12 connected to the non-high sheet resistance regions 11, and the high sheet resistance region 12 is between two adjacent non-high sheet resistance regions 11. At least two adjacent non-high sheet resistance regions 11 are provided at one end of the film width direction and extend along the film length direction.
[0058] Margins (13, 23) are respectively provided at the other ends of the first metallization film 1 and the second metallization film 2 opposite to the side where the non-high sheet resistance regions (11, 21) are provided. When the first metallization film 1 and the second metallization film 2 are wound, the first metallization film 1 and the second metallization film 2 are offset relative to each other. The non-high sheet resistance region 11 of the first metallization film 1 is offset relative to the margin 23 of the second metallization film 2, and the non-high sheet resistance region 21 of the second metallization film 2 is offset relative to the margin 13 of the first metallization film 1.
[0059] Metal grids (14, 24) surrounded by transverse insulation gaps (141, 241) and longitudinal insulation gaps (142, 242) are formed on the high sheet resistance regions (12, 22), and the metal grids (14, 24) are connected by fuses (15, 25);
[0060] The non-high sheet resistance region 11 of the first metal coating of the first metallization film 1 faces the high sheet resistance region 22 of the second metal coating of the second metallization film 2, where the connection region between the non-high sheet resistance region 11 and the high sheet resistance region 12 of the first metallization film 1 corresponds to the first-order metal grid 24 region of the second metallization film 2.
[0061] Specifically, starting from the end position of the non-high sheet resistance region 11 of the metal coating of the first metallization film 1, within 6 mm in the direction of the high sheet resistance region 12, it corresponds to the high sheet resistance region 22 of the second metallization film 2. A longitudinal insulation gap 242 is provided within the high sheet resistance region 22, and at least one metal grid 24 is provided in the region along the film width direction between the longitudinal insulation gap 242 and the remaining edge 23.
[0062] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation to the present invention.
[0063] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, the meaning of "a plurality" is two or more unless otherwise specifically defined.
[0064] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected to", "fixed", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0065] In the present utility model, unless otherwise clearly defined and limited, the first feature being "above" or "below" the second feature may include direct contact between the first and second features, or may include contact between the first and second features not directly but through additional features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the horizontal height of the first feature is less than that of the second feature.
[0066] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic representations of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this specification.
[0067] Although the embodiments of the present utility model have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present utility model. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present utility model.
Claims
1. A thin film capacitor, characterized in that: It includes a dielectric film, a first metal coating, and a second metal coating; the first metal coating covers the first film surface of the dielectric film, and the second metal coating covers the second film surface of the dielectric film; The first metal coating is provided with a non-high sheet resistance region and a high sheet resistance region connected to the non-high sheet resistance region, the second metal coating is provided with a high sheet resistance region or a non-high sheet resistance region and a high sheet resistance region connected to the non-high sheet resistance region, and a metal grid surrounded by a lateral insulation gap and a longitudinal insulation gap is formed on the high sheet resistance region, and the metal grids are connected by fuses; The non-high sheet resistance region of the first metal coating is opposite to the high sheet resistance region of the second metal coating, the connection region between the non-high sheet resistance region and the high sheet resistance region of the first metal coating and the non-high sheet resistance region correspond to at least one-order metal film grid region of the second metal coating, and the connection region between the non-high sheet resistance region and the high sheet resistance region is the connection line between the non-high sheet resistance region and the high sheet resistance region extending along the film width direction to the high sheet resistance region, and the width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 0-6 mm; The edge of the connection region between the non-high sheet resistance region and the high sheet resistance region of the first metal coating close to the high sheet resistance region is opposite to the longitudinal insulation gap of the metal grid of the second metal coating.
2. The thin film capacitor according to claim 1, characterized in that: The width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 0-2 mm.
3. A thin film capacitor as claimed in claim 1, wherein: The width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 2-4 mm.
4. A thin-film capacitor as claimed in claim 1, wherein: The width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 4-6 mm.
5. A thin film capacitor as claimed in claim 4, wherein: The width of the connection region between the non-high sheet resistance region and the high sheet resistance region along the film width is 6 mm.
6. A thin film capacitor according to claim 1, wherein: Both the first metal coating and the second metal coating are provided with a non-high sheet resistance region and a high sheet resistance region connected to the non-high sheet resistance region.
7. A thin film capacitor as claimed in claim 6, wherein: The non-high sheet resistance region is arranged at one end of the film width direction and extends along the film length direction.
8. A thin film capacitor as claimed in claim 1, wherein: Non-high sheet resistance regions are respectively arranged at both ends of the first metal coating in the film width direction and extend along the film length direction, and a margin is provided in the middle of the film width; the second metal coating is provided with a high sheet resistance region.
9. A thin film capacitor as claimed in claim 1, characterized in that: Both the first metal coating and the second metal coating are provided with at least two adjacent non-high sheet resistance regions and high sheet resistance regions connected to the non-high sheet resistance regions.
10. A thin film capacitor as claimed in claim 9, wherein: The at least two adjacent non-high sheet resistance regions are arranged at one end of the film width direction and extend along the film length direction.
11. A thin film capacitor according to claim 1, characterized in that: The first metal coating is vapor-deposited on the front surface of the dielectric film, and the second metal coating is vapor-deposited on the back surface of the dielectric film.