Laser
By integrating a diamond layer on the metal substrate to address thermal expansion coefficient mismatches, the reliability and thermal conductivity of laser devices are improved, enabling higher power and smaller form factor designs with cost efficiency.
Patent Information
- Application Number
- CN202422349438.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-25
- Publication Date
- 2025-07-15
- Estimated Expiration
- 2034-09-25
AI Technical Summary
The mismatch between the thermal expansion coefficients of the metal substrate and the ceramic tube shell in existing lasers leads to welding stress problems, affecting reliability.
Diamond copper composite material is used as the substrate, and a diamond layer is provided in the enclosed area of the substrate to adjust the thermal expansion coefficient and thermal conductivity to improve the connection reliability between the substrate and the tube and shell.
It improves the matching of the thermal expansion coefficient between the substrate and the tube and shell, improves the connection reliability, improves the heat dissipation performance of the light-emitting chip, and reduces costs.
Smart Images

Figure CN223109453U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of optoelectronic technologies, and particularly to lasers. Background Art
[0002] With the development of optoelectronic technologies, lasers are increasingly widely used. For example, they can be used as light sources in laser display products. The reliability of lasers directly affects the reliability of the entire laser display product.
[0003] In related technologies, a laser includes a metal substrate and a ceramic shell fixedly connected to the metal substrate by welding. Due to different materials and different coefficients of thermal expansion between the ceramic shell and the metal substrate, there are welding stress problems, which affect the reliability of the laser. Summary of the Utility Model
[0004] This application provides a laser, which can improve the connection reliability between the shell and the substrate.
[0005] In a first aspect, in some embodiments, a laser is provided, which includes:
[0006] A substrate;
[0007] At least one shell, the material of the shell is different from that of the substrate, the shell has a first end and a second end axially opposite to each other, the first end is fixedly connected to the substrate, and the shell and the substrate enclose an accommodation space;
[0008] A plurality of light-emitting chips, located in the accommodation space and mounted on the surface of the substrate, the light-emitting chips are used to emit laser light;
[0009] At least one light-transmitting seal, fixedly connected to the second end, the light-transmitting seal is used to seal the accommodation space;
[0010] The substrate includes a metal body and a diamond layer provided on the surface of the metal body, and diamond particles are distributed in the diamond layer;
[0011] The substrate includes an enclosed area axially projected and covered by the outer contour of the first end and an outer area located outside the enclosed area. The diamond layer is provided in the enclosed area, and the diamond layer is not provided in the outer area.
[0012] The above technical solution has the following advantages or beneficial effects: By providing a diamond layer in the enclosed area of the substrate, the thermal expansion coefficient matching between the substrate and the package can be improved, the stress problem in the connection between the package and the substrate can be improved, and the connection reliability between the package and the substrate can be improved. At the same time, the thermal conductivity of the light-emitting chip arrangement area on the substrate can be increased, the heat dissipation problem of the light-emitting chips can be improved, and the reliability of the laser during use can be improved. By providing the diamond layer on the surface of the metal body and not providing the diamond layer in the external area of the substrate, the usage amount of diamond particles can be reduced, and the cost can be lowered.
[0013] In a second aspect, in some embodiments, a laser is further provided, which includes:
[0014] A substrate;
[0015] At least one package, the material of the package is different from that of the substrate, the package has a first end and a second end axially opposite to each other, the first end is fixedly connected to the substrate, and an accommodation space is formed by enclosing the package and the substrate;
[0016] A plurality of light-emitting chips, located in the accommodation space and mounted on the surface of the substrate, and the light-emitting chips are used for emitting laser light;
[0017] At least one light-transmitting seal, fixedly connected to the second end, and the light-transmitting seal is used for sealing the accommodation space;
[0018] The substrate includes an enclosed area axially projected and covered by the outer contour of the first end and an external area located outside the enclosed area; the substrate includes a metal body and diamond particles doped in the metal body in the enclosed area, and the diamond particles are not doped in the metal body in the external area.
[0019] The above technical solution has the following advantages or beneficial effects: By doping diamond particles in the metal body in the enclosed area of the substrate, the adjustment effect of the thermal expansion coefficient and thermal conductivity of the enclosed area on the substrate is better. The thermal expansion coefficient matching between the substrate and the package can be improved, the stress problem in the connection between the package and the substrate can be improved, and the connection reliability between the package and the substrate can be improved. At the same time, the thermal conductivity of the light-emitting chip arrangement area on the substrate can be increased, the heat dissipation performance can be improved, and the reliability of the laser during use can be improved. By not doping diamond particles in the metal body in the external area, the usage amount of diamond particles can be reduced, and the cost can be lowered.
[0020] In a third aspect, in some embodiments, a laser is further provided, which includes: a circuit board;
[0021] At least one substrate, fixedly connected to the circuit board;
[0022] At least one package, the material of the package being different from that of the substrate, the package having a first end and a second end axially opposite to each other, the first end being fixedly connected to the substrate, and the package and the substrate enclosing an accommodation space; the axial projection of the outer contour of the first end covers the substrate;
[0023] A plurality of light-emitting chips, located in the accommodation space and mounted on the surface of the substrate, the light-emitting chips being configured to emit laser light;
[0024] At least one light-transmitting seal, the light-transmitting seal being fixedly connected to the second end, the light-transmitting seal being configured to seal the accommodation space;
[0025] The substrate includes a metal body and a diamond layer provided on the surface of the metal body, diamond particles being distributed in the diamond layer; the surface of the substrate includes a first area for fixing the package and a second area for mounting the light-emitting chips;
[0026] The diamond layer in the first area is provided with diamond particles having a first volume fraction, the diamond layer in the second area is provided with diamond particles having a second volume fraction, and the second volume fraction is greater than the first volume fraction.
[0027] The above technical solution has the following advantages or beneficial effects: By providing a diamond layer in the first area for fixing the package and the second area for mounting the light-emitting chips on the substrate, the stress problem of the connection between the package and the substrate can be improved, and the connection reliability between the package and the substrate can be improved. By setting the second volume fraction to be greater than the first volume fraction, the second area on the substrate for mounting the light-emitting chips can have a higher thermal conductivity, the heat dissipation problem of the light-emitting chips can be improved, and the use reliability of the laser can be improved. By providing the diamond layer on the surface of the metal body, the usage amount of diamond particles can be reduced, and the cost can be lowered. Description of the Drawings
[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0029] Figure 1 It is a schematic structural diagram of a laser in the related art.
[0030] Figure 2 It is a three-dimensional structural diagram of a laser provided by an embodiment of the present application.
[0031] Figure 3Schematic cross-sectional view of a laser provided by an embodiment of the present application.
[0032] Figure 4 Exploded view of a laser provided by an embodiment of the present application.
[0033] Figure 5 Schematic optical path diagram of a laser provided by an embodiment of the present application.
[0034] Figure 6 Schematic three-dimensional structure diagram of a tube shell and a substrate provided by an embodiment of the present application.
[0035] Figure 7 Top view of a tube shell and a substrate provided by an embodiment of the present application.
[0036] Figure 8 Another schematic cross-sectional view of a laser provided by an embodiment of the present application.
[0037] Figure 9 Another schematic three-dimensional structure diagram of a laser provided by an embodiment of the present application.
[0038] Figure 10 Another schematic cross-sectional view of a laser provided by an embodiment of the present application.
[0039] Figure 11 Another schematic three-dimensional structure diagram of a laser provided by an embodiment of the present application.
[0040] Figure 12 Another exploded view of a laser provided by an embodiment of the present application.
[0041] Figure 13 Another schematic cross-sectional view of a laser provided by an embodiment of the present application.
[0042] Reference numerals in the drawings:
[0043] 100. Laser; 1. Substrate; 11. Metal body; 12. Diamond layer; 120. Diamond particles; 101. Enclosed area; 1011. First area; 1012. Second area; 102. External area; 13. Connection hole; 14. Top surface; 15. Side surface; 2. Tube shell; 21. First end; 22. Second end; 23. Step portion; 3. Light-emitting chip; 4. Transparent sealing member; 5. Accommodation space; 6. Reflecting mirror; 7. Lens; 8. Light guide tube; 9. Circuit board;
[0044] 200. Laser in the related art; 201. Metal substrate; 202. Ceramic tube shell; 203. SMT area. Detailed implementation manners
[0045] Embodiments will be described in detail below, and examples thereof are shown in the accompanying drawings. When the following description refers to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following examples do not represent all embodiments consistent with the present application. They are merely examples of systems and methods consistent with some aspects of the present application as detailed in the claims.
[0046] It should be noted that the brief description of the terms in the present application is only for the convenience of understanding the embodiments described hereinafter, and is not intended to limit the embodiments of the present application. Unless otherwise specified, these terms should be understood in their ordinary and general meanings.
[0047] In the present application, the terms "first", "second", "third", etc. in the specification, claims and the above-mentioned drawings are used to distinguish similar or like objects or entities, and do not necessarily mean to limit a specific order or sequence, unless otherwise noted. It should be understood that such terms can be interchanged under appropriate circumstances. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.
[0048] The terms "comprising" and "having" and any variations thereof are intended to cover but not exclude inclusion. For example, a product or device comprising a series of components does not necessarily have to be limited to all the components clearly listed, but may include other components not clearly listed or inherent to these products or devices.
[0049] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present application.
[0050] In this application, unless otherwise clearly specified and defined, terms such as "installation", "connection", "linkage", "fixation", etc. shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral one; it may be a mechanical connection or an electrical connection; it may be a direct connection or an indirect connection through an intermediate medium, and it may be the communication inside two components or the interaction relationship between two components, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0051] With the development of optoelectronic technology, lasers are more and more widely used. For example, they can be used as light sources in laser display products. As the core component of laser display products, the volume and reliability of lasers directly affect the volume and reliability of the entire laser display product.
[0052] Figure 1 It is a schematic structural diagram of a laser in the related art. As Figure 1 shown, the packaging structure of the laser 200 in the related art generally includes a metal substrate 201 and a ceramic package 202. The ceramic package 202 and the metal substrate 201 are fixed by welding. The light-emitting chips (not shown) are densely arranged in the bonding area 203 surrounded by the ceramic package 202, so as to package the light-emitting chips. For heat dissipation, the material of the metal substrate 201 can be oxygen-free copper. The coefficient of thermal expansion (CTE) of oxygen-free copper is 17, with the unit of parts per million per degree Celsius (1E-6 / °C), while the coefficient of thermal expansion of ceramics is only 4 - 8. There is a great problem of mismatch in the coefficient of thermal expansion between oxygen-free copper and ceramics. After brazing the ceramic package 202 and the metal substrate 201, there are welding stress problems, and there is a great risk of ceramic cracking, and the problem is more serious with larger sizes. Once the ceramic cracks, it will lead to various reliability problems such as air leakage in the laser packaging structure and failure of the light-emitting chips, affecting the reliability of the laser.
[0053] In order to improve the connection reliability between the metal substrate 201 and the ceramic package 202, the related art can include two improvement solutions. On the one hand, the metal substrate 201 uses a kovar material that matches ceramics, such as kovar inlaid with oxygen-free copper, which can improve the welding stress problem. However, the thermal resistance of the kovar material is relatively high, and the heat dissipation performance of the metal substrate 201 will be greatly reduced, restricting the heat dissipation of high-power light-emitting chips. On the other hand, a certain number of light-emitting chips are arranged in different ceramic packages 202 for packaging. The volume of a single ceramic package 202 is reduced, and the welding area between the ceramic package 202 and the metal substrate 201 is reduced, which can relieve the problem of damage caused by welding stress. However, when the volume of the ceramic package 202 is reduced, the number of light-emitting chips that can be accommodated inside is reduced, restricting the increase of the luminous power of the laser.
[0054] Diamond copper material is a kind of metal diamond composite material, mainly composed of diamond particles and copper matrix. Diamond is a material with extremely high hardness, high thermal conductivity, high electrical insulation and chemical stability. In diamond copper material, diamond particles act as reinforcement, providing excellent thermal conductivity, mechanical properties and electrical properties for the composite material. Copper in the copper matrix is a metal with excellent thermal conductivity, having good ductility and workability. In diamond copper material, copper serves as the matrix material, providing stable support for diamond particles and providing the overall electrical and thermal conductivity of the composite material. The combination of diamond and copper matrix can be achieved by mixing diamond particles and copper matrix, and then using methods such as powder metallurgy, infiltration, squeeze casting or selective laser melting to combine the two together. In this way, the diamond particles can be more evenly distributed in the copper matrix and form a good interfacial bond.
[0055] Since the thermal conductivity of diamond material is more than twice that of copper, and at the same time, the thermal expansion coefficient of diamond is about 1 / 10 of that of copper. Therefore, combining diamond material with copper can increase the thermal conductivity of diamond copper composite material and reduce the thermal expansion coefficient at the same time.
[0056] The thermal expansion coefficient and thermal conductivity of diamond copper composite material are related to the volume fraction of diamond material. When the particle size of diamond particles is the same, with the increase of the volume fraction of diamond particles, the thermal expansion coefficient of diamond copper composite material becomes smaller, and at the same time, the thermal conductivity of diamond copper composite material becomes larger. Increasing the volume fraction of diamond particles in the composite material helps to obtain high-quality diamond copper composite material. Different volume fractions of diamond particles can be combined in the copper matrix according to requirements to obtain diamond copper composite materials with different thermal expansion coefficients and thermal conductivities.
[0057] Taking the particle size of diamond particles being about 50 microns as an example, the corresponding relationship between the volume fraction, thermal expansion coefficient and thermal conductivity of diamond particles in diamond copper composite material is shown in the following table.
[0058] Table 1:
[0059]
[0060] Through research, metal diamond composite materials can be used to improve the problem of mismatched thermal expansion coefficients between metal substrates and ceramic packages, improve the welding stress problem between metal substrates and ceramic packages, and further improve the connection reliability between metal substrates and ceramic packages.
[0061] Based on the above considerations, a laser is designed. At least in the area where the substrate is fixedly connected to the package, metal diamond material is used to improve the problem of mismatched thermal expansion coefficients between the substrate and the package, improve the welding stress problem, and further improve the connection reliability between the package and the substrate.
[0062] The laser disclosed in the embodiments of the present application can be used, but is not limited to, as a light source in laser display devices, laser projection devices, laser welding devices, laser cutting devices, etc. In the embodiments of the present application, the laser can include, but is not limited to, a visible light semiconductor laser.
[0063] Figure 2 It is a schematic three-dimensional structure diagram of a laser provided by an embodiment of the present application. Figure 3 It is a schematic cross-sectional diagram of a laser provided by an embodiment of the present application. Figure 4 It is an exploded view of a laser provided by an embodiment of the present application.
[0064] As Figures 2 to 4 shown, the laser 100 can include a substrate 1, at least one housing 2, a plurality of light-emitting chips 3, and at least one light-transmitting seal 4. The material of the housing 2 is different from that of the substrate 1. The housing 2 has a first end 21 and a second end 22 that are axially opposite. The first end 21 is fixedly connected to the substrate 1, and the housing 2 and the substrate 1 enclose an accommodation space 5. The plurality of light-emitting chips 3 are located in the accommodation space 5 and are mounted on the surface of the substrate 1. The light-emitting chips 3 are used to emit laser light. The light-transmitting seal 4 is fixedly connected to the second end 22, and the light-transmitting seal 4 is used to seal the accommodation space 5. The substrate 1 includes a metal body 11 and a diamond layer 12 provided on the surface of the metal body 11. Diamond particles 120 are distributed in the diamond layer 12. The substrate 1 includes an enclosed area 101 axially projected and covered by the outer contour of the first end 21 and an outer area 102 located outside the enclosed area 101. The enclosed area 101 is provided with the diamond layer 12, and the outer area 102 is not provided with the diamond layer 12.
[0065] The substrate 1 is generally in a plate-like structure. The plate-like structure has two relatively large plate surfaces opposite to each other along the thickness direction (such as Figure 2 and Figure 3 the Z direction in Figures 2 to 4has opposite first and second ends 21 and 22 in the Z direction (as shown in the figure), the first end 21 and the second end 22 respectively have annular end faces, and also have an inner wall and an outer wall connecting the two end faces. The first end 21 of the housing 2 is fixedly connected to the substrate 1, and one housing 2 and the substrate 1 enclose a containing space 5. The substrate 1 is used to form the bottom of the containing space 5, and the housing 2 forms the side wall of the containing space 5. The number of the housings 2 is not limited herein. The material of the housing 2 is different from that of the substrate 1. For example, the material of the housing 2 may include ceramics, and the material of the substrate 1 may include oxygen-free copper. The light-transmitting seal 4 is fixed to the second end 22 of the housing 2 away from the substrate 1, and the light-transmitting seal 4 seals the containing space 5. The substrate 1, the housing 2 and the light-transmitting seal 4 can form a packaging structure for packaging the components in the containing space 5. In this way, damage to the various components in the containing space 5 caused by external substances such as water and oxygen can be reduced, and the service reliability of the laser 100 can be improved. For example, the material of the light-transmitting seal 4 can be materials such as BK7 glass, sapphire or quartz.
[0066] A plurality of light-emitting chips 3 can be arranged in the containing space 5, and the plurality of light-emitting chips 3 can be arranged in a row along the length direction of the containing space 5 (such as Figure 4 the X direction in the figure). In some embodiments, as Figure 4 shown, the laser 100 may further include a plurality of mirrors 6 and at least one lens 7. The plurality of mirrors 6 are located in the containing space 5 and are correspondingly arranged with the light-emitting chips 3. The mirrors 6 are used to reflect the laser emitted by the light-emitting chips 3. The lens 7 is fixed to the side of the light-transmitting seal 4 away from the housing 2, and the lens 7 is used to combine multiple beams of laser light.
[0067] The light-emitting chips 3 are mounted on the surface of the substrate 1. Circuits can be arranged in the substrate 1 and the housing 2 for delivering current to the light-emitting chips 3. The light-emitting chips 3 can emit laser light to the corresponding mirrors 6 under the action of current, and the mirrors 6 reflect the laser light to the light-transmitting seal 4. The laser light passes through the light-transmitting seal 4 and exits the containing space 5, and the lens 7 combines multiple beams of laser light and outputs them. The required laser output power of different products is also different. The number of the light-emitting chips 3 mounted in the laser 100 can be adjusted accordingly according to different product requirements. The number of the light-emitting chips 3 is not limited in the embodiments of the present application. For example, for some products with a large required power, the volume of the laser 100 is also large, and the laser 100 may include 3 to 5 light-emitting chips 3.
[0068] The metal body 11 can be an integrally formed metal plate-like structure. The heat dissipation focus of the substrate 1 is in the thickness direction of the substrate 1, but the lateral direction of the substrate 1 also has a certain influence on heat dissipation. The lateral direction refers to the direction parallel to the surface of the substrate 1 on which the light-emitting chips 3 are mounted. The integrally formed metal body 11 can conduct heat laterally. In this way, heat can be quickly diffused in the metal body 11, and the heat dissipation performance of the substrate 1 is better.
[0069] The diamond layer 12 can be a metal diamond composite material layer laminated on the surface of the metal body 11, or it can be a diamond layer 12 formed by bonding diamond particles 120 to the surface of the metal body 11, that is, the diamond particles 120 are embedded in the surface of the metal body 11. The specific structural form of the diamond layer 12 is not limited. The diamond layer 12 is provided on the surface of the metal body 11, which can reduce the usage amount of diamond particles 120 and lower the cost. At the same time, since the metal body 11 is not doped with diamond particles 120 inside, the thickness of the metal body 11 can be reduced, and then the thickness of the substrate 1 can be reduced.
[0070] The axial projection of the outer contour of the first end 21 refers to the projection of the outer contour of the first end 21 of the package 2 along the axis of the package 2 (such as Figures 2 to 3 the Z direction in ) on the surface of the substrate 1. It can be understood that when the first end 21 of the package 2 is fixedly connected to the substrate 1, the area on the substrate 1 covered by the axial projection of the outer contour of the first end 21 is the enclosed area 101, and the area not covered is the external area 102. It can be understood that the enclosed area 101 of the substrate 1 includes the area for fixing the package 2 and the area for mounting the light-emitting chip 3.
[0071] The diamond layer 12 is provided in the enclosed area 101. Since the thermal expansion coefficient of the diamond material is relatively low, by providing the diamond layer 12 in the enclosed area 101, the thermal expansion coefficient of the enclosed area 101 on the substrate 1 can be reduced, which is beneficial to make the area for fixing the package 2 on the substrate 1 have a better thermal expansion coefficient matching with the package 2, reduce the thermal stress generated due to temperature change, improve the stress problem existing between the package 2 and the substrate 1 due to different materials, and further reduce the connection cracking caused by stress, and improve the connection reliability between the package 2 and the substrate 1. In the embodiment of the present application, the package 2 and the substrate 1 can be fixedly connected by soldering or other means.
[0072] Since the connection reliability between the package 2 and the substrate 1 is improved, the package 2 can be made larger, increasing the contact area between the package 2 and the substrate 1, the enclosed area of the package 2 can be increased, and more light-emitting chips 3 can be provided in the accommodation space 5. The increase in the number of light-emitting chips 3 can increase the light-emitting power of the laser 100. At the same time, since the thermal conductivity of the diamond material is relatively high, by providing the diamond layer 12 in the enclosed area 101, the thermal conductivity of the enclosed area 101 on the substrate 1 can be increased, which is beneficial to make the area for mounting the light-emitting chip 3 on the substrate 1 have a good heat conduction path, and can improve the heat dissipation problem after the increase in the number of light-emitting chips 3. Thus, the embodiment of the present application can provide a laser 100 with high light-emitting power, high heat dissipation efficiency and high reliability.
[0073] Combined with Figure 5 shown in Figure 5It is a schematic optical path diagram of a laser 100 provided by an embodiment of the present application. Multiple light-emitting chips 3 emit laser light to corresponding mirrors 6 under the action of current. The mirrors 6 reflect the laser light to a lens 7, and the lens 7 combines multiple laser beams and outputs them to an optical waveguide 8. It can be understood that the row pitch D of the light-emitting chips 3 affects the distance and position of the mirrors 6, thereby affecting the packaging volume of the laser 100. Since the thermal conductivity of the area on the substrate 1 where the light-emitting chips 3 are mounted is relatively high, efficient heat dissipation can be achieved. Thus, the light-emitting chips 3 can be densely arranged, and the row pitch D of the light-emitting chips 3 can be reduced, so as to reduce the packaging volume, and further reduce the volume of the package 2, which is beneficial to the light combination of the rear optical path of the laser 100 and the miniaturization of the laser 100. For example, the row pitch D of the light-emitting chips 3 can be between 1 millimeter and 3 millimeters.
[0074] The diamond layer 12 is not provided in the external area 102. In this way, the usage amount of diamond particles 120 can be reduced, and the cost can be lowered. In some embodiments, the external area 102 of the substrate 1 can be provided with a connection structure, and the connection structure can be used to connect other components of the laser 100. For example, other components can include a circuit board. When the diamond layer 12 is not provided in the external area 102, the influence of the diamond layer 12 on the connection structure can be reduced, and the connection reliability between the substrate 1 and other components can be improved. For example, the connection structure can include connection holes 13.
[0075] For the laser 100 according to the embodiment of the present application, by providing the diamond layer 12 in the enclosed area 101 of the substrate 1, the thermal expansion coefficient matching between the substrate 1 and the package 2 can be improved, the stress problem of the connection between the package 2 and the substrate 1 can be improved, and the connection reliability between the package 2 and the substrate 1 can be improved. At the same time, the thermal conductivity of the area where the light-emitting chips 3 are arranged on the substrate 1 can be increased, the heat dissipation problem of the light-emitting chips 3 can be improved, and the usage reliability of the laser 100 can be improved. By providing the diamond layer 12 on the surface of the metal body 11 and not providing the diamond layer 12 in the external area 102 of the substrate 1, the usage amount of diamond particles 120 can be reduced, and the cost can be lowered.
[0076] In some embodiments, as Figure 3 shown, the enclosed area 101 includes a first area 1011 for fixing the package 2 and a second area 1012 for mounting the light-emitting chips 3. The diamond layer 12 in the first area 1011 is provided with diamond particles 120 with a first volume fraction. The diamond layer 12 in the second area 1012 is provided with diamond particles 120 with a second volume fraction, and the second volume fraction is greater than the first volume fraction.
[0077] The thermal expansion coefficient and thermal conductivity of the metal diamond composite material are related to the volume fraction of diamond particles 120. When the particle size of diamond particles 120 is the same, the higher the volume fraction of diamond particles 120 in diamond layer 12, the higher the thermal conductivity and the smaller the thermal expansion coefficient. By utilizing the adjustable characteristics of the thermal expansion coefficient and thermal conductivity of the metal diamond composite material, the diamond layer 12 can be arranged in regions, that is, the position and volume fraction of the distribution of diamond particles 120 on the metal body 11 can be customized according to requirements. In this way, the thermal expansion coefficient and thermal conductivity of different regions on the substrate 1 can be adjusted, and the thermal expansion coefficient and thermal conductivity can be flexibly customized in different regions on the substrate 1.
[0078] The substrate 1 is fixedly connected to the end face of the first end 21 of the shell 2 through the diamond layer 12 in the first region 1011, and the shell 2 is located on the side of the diamond layer 12 away from the metal body 11. By setting the volume fraction of diamond particles 120 in the diamond layer 12 in the first region 1011 to be the first volume fraction, the thermal expansion coefficient of the first region 1011 on the substrate 1 can be set to a set value, and the set value can be preset according to the thermal expansion coefficient of the shell 2. For example, the material of the shell 2 can include ceramics, and the thermal expansion coefficient of the ceramics is 4 - 8. At this time, the first volume fraction of diamond particles 120 in the diamond layer 12 in the first region 1011 can be adjusted within the range of 60% to 75%, so that the thermal expansion coefficient of the first region 1011 on the substrate 1 is within the range of 4 - 7. In this way, the difference between the thermal expansion coefficient of the first region 1011 on the substrate 1 and the thermal expansion coefficient of the shell 2 can be reduced, and the first region 1011 on the substrate 1 for fixing the shell 2 and the shell 2 have better thermal expansion coefficient matching, which can further improve the stress problem of the connection between the shell 2 and the substrate 1, and then improve the connection reliability between the shell 2 and the substrate 1.
[0079] The substrate 1 mounts the light-emitting chip 3 through the diamond layer 12 in the second region 1012, and the light-emitting chip 3 is located on the side of the diamond layer 12 away from the metal body 11. By setting the volume fraction of diamond particles 120 in the diamond layer 12 in the second region 1012 to be the second volume fraction, and the second volume fraction is greater than the first volume fraction, the thermal conductivity of the second region 1012 on the substrate 1 can be higher. The second region 1012 on the substrate 1 for mounting the light-emitting chip 3 has higher thermal conductivity, and can quickly transfer the heat generated by the light-emitting chip 3 in the vertical direction (such as Figure 3It is conducted to the metal body 11 in the Z direction) and then conducted to the outside through the metal body 11. The heat generated by the light-emitting chip 3 during the light-emitting process can be quickly dissipated through the substrate 1, achieving efficient and rapid heat export and improving the heat dissipation performance. Due to the improved heat dissipation performance, the risk of damage to the light-emitting chip 3 due to excessive temperature can be reduced, and the reliability of use of the laser 100 can be improved. At the same time, a high-power light-emitting chip 3 can be used, increasing the light-emitting power of the laser 100. Since the second region 1012 on the substrate 1 where the light-emitting chip 3 is mounted can achieve efficient heat dissipation, the arrangement of the light-emitting chips 3 can be denser, the packaging volume can be reduced, which is beneficial to the miniaturization of the laser 100.
[0080] In this way, high light-emitting power, high reliability, efficient heat dissipation and miniaturization of the laser 100 can be achieved.
[0081] In some embodiments, the absolute value of the difference between the coefficient of thermal expansion of the first region 1011 of the substrate 1 and the coefficient of thermal expansion of the housing 2 is less than or equal to 1E-6 / °C.
[0082] That is, the difference in the coefficient of thermal expansion between the first region 1011 on the substrate 1 and the coefficient of thermal expansion of the housing 2 is less than or equal to 1. In this way, the coefficient of thermal expansion of the first region 1011 on the substrate 1 for fixing the housing 2 can be matched with the coefficient of thermal expansion of the housing 2, reducing the thermal stress generated due to temperature changes, reducing connection cracking, and improving the connection reliability between the housing 2 and the substrate 1.
[0083] In some embodiments, the thermal conductivity of the second region 1012 of the substrate 1 is at least twice the thermal conductivity of the metal body 11.
[0084] For example, the material of the metal body 11 can include oxygen-free copper, and the thermal conductivity of oxygen-free copper is about 400, with the unit of watt per meter kelvin (W / mK). At this time, the second volume fraction of the diamond particles 120 in the second region 1012 of the substrate 1 can be adjusted to increase the thermal conductivity of the second region 1012 of the substrate 1 to 1000 W / mK (more than twice that of oxygen-free copper). In some embodiments, the thermal conductivity of the second region 1012 of the substrate 1 can be less than or equal to four times the thermal conductivity of the metal body 11, for example, increasing the thermal conductivity of the second region 1012 of the substrate 1 to 1600 W / mK.
[0085] In this way, the second region 1012 on the substrate 1 where the light-emitting chips 3 are mounted can have a better heat conduction path, enabling efficient and rapid heat dissipation, and further improving the heat dissipation problem after the increase in the number of light-emitting chips 3 and the increase in the light-emitting power. Due to the improved heat dissipation performance, the risk of damage to the light-emitting chips 3 due to excessive temperature can be reduced, and the reliability of the laser 100 can be improved. Since efficient heat dissipation can be achieved, the arrangement of the light-emitting chips 3 can be denser, and the packaging volume can be reduced, which is beneficial to the miniaturization of the laser 100. Therefore, the embodiment of the present application can provide a laser 100 with high light-emitting power, efficient heat dissipation, high reliability, and miniaturization.
[0086] In some embodiments, the first volume fraction can be greater than or equal to 60% and less than or equal to 70%.
[0087] By setting the first volume fraction of the diamond particles 120 in the first region 1011 on the substrate 1 to be greater than or equal to 60%, the coefficient of thermal expansion of the first region 1011 on the substrate 1 can be reduced. For example, when the material of the metal body 11 includes oxygen-free copper, when the first volume fraction is in the range of 60% to 65%, the coefficient of thermal expansion of the first region 1011 on the substrate 1 can be 6 - 7. By setting the first volume fraction of the diamond particles 120 in the first region 1011 on the substrate 1 to be less than or equal to 70%, the lower limit value of the coefficient of thermal expansion of the first region 1011 on the substrate 1 can be defined. For example, when the material of the metal body 11 includes oxygen-free copper, when the first volume fraction is in the range of 65% to 70%, the coefficient of thermal expansion of the first region 1011 on the substrate 1 can be 5 - 6, and the lower limit value of the coefficient of thermal expansion can be 5. At this time, the difference in the coefficient of thermal expansion between the first region 1011 on the substrate 1 and the coefficient of thermal expansion of the package 2 is small, which can improve the stress problem of the connection between the package 2 and the substrate 1 and improve the connection reliability between the package 2 and the substrate 1. Since the upper limit of the first volume fraction is defined, the usage amount of the diamond particles 120 can be reduced, and the cost can be lowered.
[0088] By setting the first volume fraction to be greater than or equal to 60% and less than or equal to 70%, it is beneficial to reduce the difference in the coefficient of thermal expansion between the first region 1011 on the substrate 1 and the coefficient of thermal expansion of the package 2, enabling the region on the substrate 1 for fixing the package 2 to have a better coefficient of thermal expansion matching with the package 2, reducing the thermal stress generated due to temperature changes, and improving the connection reliability between the package 2 and the substrate 1. At the same time, the usage amount of the diamond particles 120 can be reduced, and the cost can be lowered.
[0089] In some embodiments, the second volume fraction can be greater than or equal to 60% and less than or equal to 75%.
[0090] Setting the second volume fraction of the diamond particles 120 in the second region 1012 on the substrate 1 to be greater than or equal to 60% can increase the thermal conductivity of the second region 1012 on the substrate 1. For example, when the material of the metal body 11 includes oxygen-free copper, setting the second volume fraction within the range of 60% to 70% can make the thermal conductivity of the second region 1012 on the substrate 1 be 550 - 650. Setting the second volume fraction of the diamond particles 120 in the second region 1012 on the substrate 1 to be less than or equal to 75% can define the upper limit value of the thermal conductivity of the second region 1012 on the substrate 1. For example, when the material of the metal body 11 includes oxygen-free copper, setting the second volume fraction within the range of 70% to 75% can make the thermal conductivity of the second region 1012 on the substrate 1 be 650 - 800, and the upper limit value of the thermal conductivity can be 800. At this time, the second region 1012 on the substrate 1 has a high thermal conductivity, which can improve the heat dissipation problem of the light-emitting chip 3. Since the upper limit of the second volume fraction is defined, the usage amount of the diamond particles 120 can be reduced, and the cost can be lowered.
[0091] By setting the second volume fraction to be greater than or equal to 60% and less than or equal to 75%, it is beneficial to increase the thermal conductivity of the second region 1012 on the substrate 1, which can improve the heat dissipation problem of the light-emitting chip 3, reduce the risk of damage to the light-emitting chip 3 due to excessive temperature, and improve the reliability of use of the laser 100. At the same time, the usage amount of the diamond particles 120 can be reduced, and the cost can be lowered.
[0092] In some embodiments, the particle size range of the diamond particles 120 can be 50 microns to 300 microns.
[0093] The thermal conductivity of the metal diamond composite is limited by the composite interface design and preparation process. Specifically, it is limited by the intrinsic thermal conductivities of the metal body 11 and the diamond particles 120, the volume fraction of the diamond particles 120, and the particle size. Selecting diamond particles 120 with a particle size of 50 microns to 300 microns as the reinforcing phase in the metal diamond composite is beneficial to reducing the transformation of the surface of the diamond particles 120 into a graphite-like phase, improving the interfacial bonding between the diamond particles 120 and the metal body 11, being beneficial to increasing the thermal conductivity of the substrate 1, and improving the heat dissipation performance.
[0094] In some embodiments, as Figure 3 shown, the thickness of the diamond layer 12 in the first region 1011 is greater than or equal to the particle size of the diamond particles 120 and less than twice the particle size of the diamond particles 120. The thickness of the diamond layer 12 in the second region 1012 is greater than the thickness of the diamond layer 12 in the first region 1011.
[0095] Since the thickness of the diamond layer 12 in the first region 1011 is less than twice the particle size of the diamond particles 120, there are no two diamond particles 120 that completely overlap in the thickness direction (such as the Z direction in Figure 3 ), and the diamond particles 120 in the diamond layer 12 of the first region 1011 are distributed in a single layer. Since the diamond particles 120 have a low coefficient of thermal expansion, arranging the single-layer diamond particles 120 in the first region 1011 on the substrate 1 can make the coefficient of thermal expansion of the first region 1011 on the substrate 1 match that of the package 2, improving the connection reliability between the package 2 and the substrate 1. Since the diamond particles 120 in the diamond layer 12 are distributed in a single layer, the amount of diamond particles 120 used can be reduced, lowering the cost. Since the diamond particles 120 are distributed in a single layer and the thickness of the diamond layer 12 is small, the thickness of the substrate 1 can be reduced, which is beneficial to the miniaturization of the laser 100.
[0096] Since the thickness of the diamond layer 12 in the second region 1012 is greater than the thickness of the diamond layer 12 in the first region 1011, more diamond particles 120 can be arranged in the diamond layer 12 of the second region 1012 in the thickness direction. The number of diamond particles 120 arranged in the thickness direction in the diamond layer 12 can be determined according to the requirement of thermal conductivity, that is, the number of layers in which the diamond particles 120 are distributed. The diamond particles 120 in the diamond layer 12 of the second region 1012 can be distributed in two or more layers. Since the diamond layer 12 in the second region 1012 is thicker and has more diamond particles 120, the second region 1012 of the substrate 1 can have a higher thermal conductivity. The higher thermal conductivity of the second region 1012 of the substrate 1 for mounting the light-emitting chip 3 can improve the heat dissipation problem after the increase in the number and power of the light-emitting chips 3, and can increase the light-emitting power of the laser 100. Since the heat dissipation problem is improved, the risk of damage to the light-emitting chip 3 due to excessive temperature can be reduced, and the reliability of use of the laser 100 can be improved.
[0097] In this way, it is beneficial to achieve high light-emitting power, high reliability, efficient heat dissipation, miniaturization and low cost of the laser 100.
[0098] In some embodiments, as shown in Figure 2 and Figure 3 , the number of packages 2 is two, and the two packages 2 and the substrate 1 enclose two accommodation spaces 5. At least one light-emitting chip 3 is located in one of the accommodation spaces 5 and is used to emit laser light of a first color, and a plurality of light-emitting chips 3 are located in the other accommodation space 5 and are used to emit laser light of a second color and a third color.
[0099] The laser light of the first color can be red laser light, and the laser lights of the second color and the third color can be green laser light and blue laser light respectively.
[0100] Thus, the embodiment of the present application can provide a laser 100 including a dual package 2 and a three-color light-emitting chip 3.
[0101] Figure 6 FIG. 6 is a schematic perspective view of a package 2 and a substrate 1 provided by an embodiment of the present application. Figure 7 FIG. 8 is a top view of a package 2 and a substrate 1 provided by an embodiment of the present application. Figure 8 FIG. 10 is a schematic cross-sectional view of another laser 100 provided by an embodiment of the present application. Figure 9 FIG. 12 is a schematic perspective view of another laser 100 provided by an embodiment of the present application.
[0102] In some embodiments, as shown in FIG. Figures 6 to 9 17, the number of packages 2 is one, and multiple light-emitting chips 3 are located in an accommodation space 5.
[0103] As shown in FIG. Figure 9 22, multiple light-emitting chips 3 can be arranged in multiple rows and columns in the accommodation space 5. Since the connection reliability between the package 2 and the substrate 1 is improved, the package 2 can be made larger, the enclosed area of the package 2 increases, more light-emitting chips 3 can be arranged in the accommodation space 5, and one package 2 can be used to encapsulate multiple light-emitting chips 3 of the laser 100. Since one package 2 is used for encapsulation, the encapsulation process can be simplified and the production efficiency can be improved. Since the same number of light-emitting chips 3 are encapsulated using one package 2, the intermediate side walls of multiple packages 2 can be omitted, the structure is compact, the volume of the laser 100 can be reduced, which is beneficial to the miniaturization of the laser 100.
[0104] Thus, the embodiment of the present application can provide a laser 100 with a simplified encapsulation process and miniaturization.
[0105] In some embodiments, the material of the metal body 11 may include oxygen-free copper. Oxygen-free copper has better thermal conductivity, and the thermal conductivity can meet the heat dissipation requirements of high-power light-emitting chips 3, and the heat can be quickly diffused in the metal body 11. At the same time, by utilizing the high thermal conductivity of the diamond particles 120, it is beneficial to achieve efficient heat dissipation in the second region 1012, improve the heat dissipation performance of the substrate 1, and improve the use reliability of the laser 100.
[0106] In some embodiments, the material of the package 2 may include ceramics, such as alumina or aluminum nitride, etc.
[0107] Figure 10 FIG. 35 is a schematic cross-sectional view of another laser 100 provided by an embodiment of the present application. As shown in FIG. Figure 10As shown in the figure, an embodiment of the present application further provides a laser 100. The laser 100 includes a substrate 1, at least one package 2, a plurality of light-emitting chips 3, and at least one light-transmitting seal 4. The material of the package 2 is different from that of the substrate 1. The package 2 has a first end 21 and a second end 22 which are axially opposite to each other. The first end 21 is fixedly connected to the substrate 1, and the package 2 and the substrate 1 enclose a containing space 5. A plurality of light-emitting chips 3 are located in the containing space 5 and are mounted on the surface of the substrate 1. The light-emitting chips 3 are used to emit laser light. The light-transmitting seal 4 is fixedly connected to the second end 22, and the light-transmitting seal 4 is used to seal the containing space 5. The substrate 1 includes an enclosed area 101 axially projected and covered by the outer contour of the first end 21 and an outer area 102 located outside the enclosed area 101. The substrate 1 includes a metal body 11 and diamond particles 120 doped in the metal body 11 of the enclosed area 101. The metal body 11 in the outer area 102 is not doped with diamond particles 120.
[0108] The diamond particles 120 are doped in the metal body 11 of the enclosed area 101, so that the substrate 1 forms a metal-diamond composite material in the enclosed area 101. It can be to mix the diamond particles 120 with the metal body 11, and then use methods such as powder metallurgy, infiltration, squeeze casting, or selective laser melting to composite the two together. The composite method of the diamond particles 120 and the metal body 11 is not limited here.
[0109] Since the diamond particles 120 are doped inside the metal body 11 of the enclosed area 101, the diamond particles 120 and the metal body 11 can form a good interfacial bond, and the effect of adjusting the thermal expansion coefficient and thermal conductivity of the enclosed area 101 on the substrate 1 is better.
[0110] Since the metal body 11 in the enclosed area 101 is doped with diamond particles 120, the matching of the thermal expansion coefficients of the substrate 1 and the package 2 can be improved, the stress problem of the connection between the package 2 and the substrate 1 can be improved, and the connection reliability between the package 2 and the substrate 1 can be improved. At the same time, the thermal conductivity of the light-emitting chip 3 arrangement area on the substrate 1 can be improved, the heat dissipation performance can be improved, and the use reliability of the laser 100 can be improved.
[0111] Since the metal body 11 in the outer area 102 is not doped with diamond particles 120, the usage amount of the diamond particles 120 can be reduced, and the cost can be lowered.
[0112] In the laser 100 according to the embodiment of the present application, diamond particles 120 are doped in the metal body 11 of the enclosed area 101 of the substrate 1, so that the adjustment effect of the thermal expansion coefficient and the thermal conductivity of the enclosed area 101 on the substrate 1 is better, the matching of the thermal expansion coefficients of the substrate 1 and the package 2 can be improved, the stress problem of the connection between the package 2 and the substrate 1 can be improved, and the connection reliability between the package 2 and the substrate 1 can be improved. At the same time, the thermal conductivity of the area where the light-emitting chips 3 are arranged on the substrate 1 can be increased, the heat dissipation performance can be improved, and the reliability of use of the laser 100 can be improved. By not doping diamond particles 120 in the metal body 11 of the external area 102, the usage amount of the diamond particles 120 can be reduced, and the cost can be lowered.
[0113] In some embodiments, as Figure 10 shown, the enclosed area 101 includes a first area 1011 for fixing the package 2 and a second area 1012 for mounting the light-emitting chips 3. The first area 1011 is doped with diamond particles 120 with a first volume fraction, and the second area 1012 is doped with diamond particles 120 with a second volume fraction, and the second volume fraction is greater than the first volume fraction.
[0114] Since the second volume fraction is greater than the first volume fraction, the thermal conductivity of the second area 1012 on the substrate 1 can be higher. The second area 1012 on the substrate 1 for mounting the light-emitting chips 3 has a higher thermal conductivity, and the heat generated by the light-emitting chips 3 can be quickly conducted in the vertical direction (such as Figure 10 the Z direction in
[0115] ) to the metal body 11 and conducted to the outside through the metal body 11. The heat generated during the light emission of the light-emitting chips 3 can be quickly dissipated through the substrate 1, realizing the efficient and rapid export of heat and improving the heat dissipation performance. Since the heat dissipation performance is improved, the risk of damage to the light-emitting chips 3 due to excessive temperature can be reduced, and the reliability of use of the laser 100 can be improved. At the same time, high-power light-emitting chips 3 can be used, and the light-emitting power of the laser 100 can be increased. Since the second area 1012 on the substrate 1 for mounting the light-emitting chips 3 can achieve efficient heat dissipation, the arrangement of the light-emitting chips 3 can be denser, the packaging volume can be reduced, which is beneficial to the miniaturization of the laser 100.
[0116] Figure 11 FIG. is a three-dimensional structural schematic diagram of another laser 100 provided by the embodiment of the present application. Figure 12 FIG. is an exploded view of another laser 100 provided by the embodiment of the present application. Figure 13 FIG. is a cross-sectional schematic diagram of another laser 100 provided by the embodiment of the present application.
[0117] As Figures 11 to 13As shown in the figure, an embodiment of the present application further provides a laser 100. The laser 100 includes a circuit board 9, at least one substrate 1, at least one package 2, a plurality of light-emitting chips 3, and at least one light-transmitting seal 4. The substrate 1 is fixedly connected to the circuit board 9. The material of the package 2 is different from that of the substrate 1. The package 2 has a first end 21 and a second end 22 that are axially opposite to each other. The first end 21 is fixedly connected to the substrate 1, and the package 2 and the substrate 1 enclose a containing space 5. The axial projection of the outer contour of the first end 21 covers the substrate 1. The plurality of light-emitting chips 3 are located in the containing space 5 and are mounted on the surface of the substrate 1. The light-emitting chips 3 are used to emit laser light. The light-transmitting seal 4 is fixedly connected to the second end 22, and the light-transmitting seal 4 is used to seal the containing space 5. The substrate 1 includes a metal body 11 and a diamond layer 12 provided on the surface of the metal body 11. Diamond particles 120 are distributed in the diamond layer 12. The surface of the substrate 1 includes a first area 1011 for fixing the package 2 and a second area 1012 for mounting the light-emitting chips 3. The diamond layer 12 in the first area 1011 is provided with diamond particles 120 having a first volume fraction, and the diamond layer 12 in the second area 1012 is provided with diamond particles 120 having a second volume fraction, and the second volume fraction is greater than the first volume fraction.
[0118] The circuit board 9 can be a PCB (Printed Circuit Board) board. The substrate 1 can be fixed to the circuit board 9 through the bottom surface. The package 2 can be located on the side of the substrate 1 away from the circuit board 9. Since the axial projection of the outer contour of the first end 21 of the package 2 covers the substrate 1, a package 2 and a substrate 1 enclose a containing space 5. The substrate 1 forms the bottom of the containing space 5, and the package 2 forms the side wall of the containing space 5. The light-transmitting seal 4 is fixed to the second end 22 of the package 2 away from the substrate 1, and the light-transmitting seal 4 seals the containing space 5. The substrate 1, the package 2, and the light-transmitting seal 4 can form a packaging structure. The light-emitting chips 3 are mounted on the surface of the substrate 1. Circuits can be arranged in the package 2 and the substrate 1 to electrically connect the light-emitting chips 3 to the circuit board 9. The circuit board 9 is used to supply current to the light-emitting chips 3. The light-emitting chips 3 emit laser light under the action of the current, and the laser light passes through the light-transmitting seal 4 and shoots out of the containing space 5.
[0119] The substrate 1 is fixedly connected to the end face of the first end 21 of the package 2 through the diamond layer 12 in the first area 1011. By setting the volume fraction of the diamond particles 120 in the diamond layer 12 in the first area 1011 to be the first volume fraction, the difference between the thermal expansion coefficient of the first area 1011 on the substrate 1 and the thermal expansion coefficient of the package 2 can be reduced. The first area 1011 on the substrate 1 for fixing the package 2 and the package 2 have good thermal expansion coefficient matching, which can improve the stress problem of the connection between the package 2 and the substrate 1, and further improve the connection reliability between the package 2 and the substrate 1.
[0120] The substrate 1 mounts the light-emitting chip 3 through the diamond layer 12 in the second region 1012. By setting the volume fraction of the diamond particles 120 in the diamond layer 12 of the second region 1012 to be the second volume fraction, and the second volume fraction being greater than the first volume fraction, the thermal conductivity of the second region 1012 on the substrate 1 can be made higher, which is conducive to having a good heat conduction path in the second region 1012 where the light-emitting chip 3 is mounted on the substrate 1, capable of improving the heat dissipation problem of the light-emitting chip 3 and enhancing the heat dissipation performance. Due to the improvement of the heat dissipation performance, the risk of damage to the light-emitting chip 3 due to excessive temperature can be reduced, and the service reliability of the laser 100 can be improved.
[0121] In the laser 100 according to the embodiment of the present application, by providing the diamond layer 12 in the first region 1011 where the housing 2 is fixed to the substrate 1 and the second region 1012 where the light-emitting chip 3 is mounted, the stress problem of the connection between the housing 2 and the substrate 1 can be improved, and the connection reliability between the housing 2 and the substrate 1 can be improved. By setting the second volume fraction to be greater than the first volume fraction, the second region 1012 on the substrate 1 where the light-emitting chip 3 is mounted can have a higher thermal conductivity, which can improve the heat dissipation problem of the light-emitting chip 3 and enhance the service reliability of the laser 100. By providing the diamond layer 12 on the surface of the metal body 11, the usage amount of the diamond particles 120 can be reduced, and the cost can be lowered.
[0122] In some embodiments, as Figure 13 shown, the first end 21 of the housing 2 has an opening. The first end 21 of the housing 2 is further provided with a stepped portion 23 surrounding the opening. The substrate 1 includes a top surface 14 facing away from the circuit board 9 and a side surface 15 connected to the top surface 14. The substrate 1 is embedded in the first end 21 of the housing 2, and the top surface 14 and the side surface 15 are fixedly connected to the surface of the stepped portion 23.
[0123] The first region 1011 of the substrate 1 includes the top surface 14 and the side surface 15 of the substrate 1, and the diamond layer 12 is provided on the top surface 14 and the side surface 15.
[0124] The stepped portion 23 of the housing 2 and the substrate 1 form a nested fit, which can play a role in limiting the connection between the housing 2 and the substrate 1, and can further improve the connection reliability between the housing 2 and the substrate 1.
[0125] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.
[0126] The above-described embodiments merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation to the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all fall within the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.
Claims
1. A laser, characterized in that, The laser includes: a substrate; at least one casing, the material of the casing being different from that of the substrate, the casing having a first end and a second end axially opposite to each other, the first end being fixedly connected to the substrate, and the casing and the substrate enclosing a containing space; a plurality of light-emitting chips, located in the containing space and mounted on the surface of the substrate, the light-emitting chips being used for emitting laser light; at least one light-transmitting seal, the light-transmitting seal being fixedly connected to the second end, the light-transmitting seal being used for sealing the containing space; the substrate includes a metal body and a diamond layer provided on the surface of the metal body, and diamond particles are distributed in the diamond layer; the substrate includes an enclosed area axially projected and covered by the outer contour of the first end and an outer area located outside the enclosed area, the diamond layer is provided in the enclosed area, and the diamond layer is not provided in the outer area.
2. The laser according to claim 1, characterized in that, the enclosed area includes a first area for fixing the casing and a second area for mounting the light-emitting chips; the diamond layer in the first area is provided with diamond particles having a first volume fraction, the diamond layer in the second area is provided with diamond particles having a second volume fraction, and the second volume fraction is greater than the first volume fraction.
3. The laser according to claim 2, characterized in that, the absolute value of the difference between the coefficient of thermal expansion of the first area of the substrate and the coefficient of thermal expansion of the casing is less than or equal to 1E-6 / °C.
4. The laser according to claim 2, characterized in that, the thermal conductivity of the second area of the substrate is at least twice that of the metal body.
5. The laser according to claim 2, characterized in that, the thickness of the diamond layer in the first area is greater than or equal to the particle size of the diamond particles and less than twice the particle size of the diamond particles, and the thickness of the diamond layer in the second area is greater than the thickness of the diamond layer in the first area.
6. The laser according to claim 1, characterized in that, the number of the casings is one, and the plurality of light-emitting chips are located in one containing space; or the number of the casings is two, the two casings and the substrate enclose two containing spaces, at least one of the light-emitting chips is located in one of the containing spaces and is used for emitting laser light of a first color, and a plurality of the light-emitting chips are located in the other containing space and are used for emitting laser light of a second color and a third color.
7. The laser according to any one of claims 1 to 6, characterized in that, the material of the metal body includes oxygen-free copper, and / or, the material of the casing includes ceramic.
8. A laser, characterized in that, The laser includes: a substrate; at least one casing, the material of the casing being different from that of the substrate, the casing having a first end and a second end axially opposite to each other, the first end being fixedly connected to the substrate, and the casing and the substrate enclosing a containing space; a plurality of light-emitting chips, located in the containing space and mounted on the surface of the substrate, the light-emitting chips being used for emitting laser light; at least one light-transmitting seal, the light-transmitting seal being fixedly connected to the second end, the light-transmitting seal being used for sealing the containing space; The substrate includes an enclosed area axially projected and covered by the outer contour of the first end and an outer area located outside the enclosed area; the substrate includes a metal body and diamond particles doped in the metal body of the enclosed area, and the diamond particles are not doped in the metal body of the outer area.
9. The laser according to claim 8, characterized in that, The enclosed area includes a first area for fixing the shell and a second area for mounting the light-emitting chip; The first area is doped with diamond particles with a first volume fraction, the second area is doped with diamond particles with a second volume fraction, and the second volume fraction is greater than the first volume fraction.
10. A laser, characterized in that, The laser includes: A circuit board; At least one substrate fixedly connected to the circuit board; At least one shell, the material of the shell is different from that of the substrate, the shell has a first end and a second end axially opposite to each other, the first end is fixedly connected to the substrate, and the shell and the substrate enclose a containing space; the axial projection of the outer contour of the first end covers the substrate; A plurality of light-emitting chips, located in the containing space and mounted on the surface of the substrate, the light-emitting chips are used for emitting laser light; At least one light-transmitting seal fixedly connected to the second end, the light-transmitting seal is used for sealing the containing space; The substrate includes a metal body and a diamond layer provided on the surface of the metal body, and diamond particles are distributed in the diamond layer; the surface of the substrate includes a first area for fixing the shell and a second area for mounting the light-emitting chip; The diamond layer of the first area is provided with diamond particles with a first volume fraction, the diamond layer of the second area is provided with diamond particles with a second volume fraction, and the second volume fraction is greater than the first volume fraction.