Raw film detection machine and detection module thereof
By introducing sliding varistor adjustment circuit resistance value and multiple detection mechanisms into the original sheet detection machine, the problem of insufficient detection sensitivity of original sheets in different colors is solved, and efficient and accurate original sheet detection is achieved, which improves production stability and efficiency.
Patent Information
- Application Number
- CN202422268843.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-14
- Publication Date
- 2025-07-18
- Estimated Expiration
- 2034-09-14
AI Technical Summary
When faced with original films of different colors and shades, the detection sensitivity decreases, resulting in high probability of false detection and missed detection, affecting production efficiency and stability.
The detection module including a detection probe, resistor component and signal detection module is adopted. The circuit resistance value is adjusted through a sliding rheostat to adapt to different reflectances, and combined with a multiple detection mechanism, the detection accuracy and sensitivity are improved.
It significantly improves the accuracy and sensitivity of the original film detection machine, reduces the probability of false detection and missed detection, enhances the adaptability to different types of original films, improves the detection efficiency and automation level, and ensures the accuracy of the detection results and the efficient and smooth process.
Smart Images
Figure CN223123167U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor manufacturing, and specifically, to a wafer detection machine and its detection module. Background Art
[0002] In the highly precise semiconductor manufacturing process, the wafer transfer devices of the machine (such as the LAM rainbow send / receive index system) undertake crucial tasks. They rely on advanced optical sensing technology (i.e., optical sensing for wafer detection) to ensure the accurate identification and precise positioning of wafers. These devices achieve dynamic tracking and adjustment of the wafer position by precisely analyzing the color characteristics on the back of the wafer. However, the complexity of the semiconductor industry lies in that wafers of different processes often exhibit different shades of back color, which poses a severe challenge to the detection ability of optical sensors.
[0003] Specifically, when the back color of the wafer is relatively dark, the optical sensor of the wafer detection machine receives significantly less reflected light, resulting in a sharp decline in the sensor sensitivity. This phenomenon directly affects the accurate detection of the sensor for the wafer, making it possible to cause wafer dragging during the wafer feeding process because it cannot timely sense the presence of the wafer. In severe cases, it may even cause the cassette loaded with wafers to overturn, causing irreversible damage to the wafers themselves and production equipment.
[0004] In addition, traditional wafer detection mechanisms often adopt a single - detection mode. Although this method is simple, it has a large degree of contingency and cannot completely eliminate the risks of mis - detection or missed - detection. This limitation not only increases the possibility of wafer damage but also may trigger the emergency stop alarm of the production line, seriously interfering with the smooth operation of the production line and reducing the overall production efficiency and stability. Summary of the Utility Model
[0005] In view of the above problems, in order to enable the wafer detection machine to be applicable to more wafer operations and processes, this application proposes a wafer detection machine and its detection module. The detection module of this wafer detection machine can improve the detection sensitivity and stability of the wafer detection machine, enabling the wafer detection machine to effectively handle wafers of different colors to ensure the smooth progress of the production process and the continuous improvement of product quality.
[0006] The utility model provides a detection module of a wafer detection machine, including:
[0007] A detection probe for emitting and receiving detection signals;
[0008] A resistor component including a rheostat, and the resistor component is electrically connected to the detection probe;
[0009] A signal detection module, which is used to receive and feedback the electrical signals from the resistor component, and the signal detection module is electrically connected to the detection probe.
[0010] Optionally, the signal detection module is connected in series with the detection probe, and the signal detection module is connected in parallel with the resistor component.
[0011] Optionally, the detection probe includes:
[0012] A diode, which is connected in series with the signal detection module and is used to emit signals to the original wafer.
[0013] A triode, which is connected in series with the resistor component and receives the reflected signals from the original wafer.
[0014] Optionally, the resistor component further includes a fixed resistor.
[0015] Optionally, the resistor component includes a first sliding rheostat.
[0016] Optionally, the resistor component includes a second sliding rheostat and a third sliding rheostat.
[0017] Optionally, the resistance value of the third sliding rheostat is less than or equal to 3 / 20 of the resistance value of the second sliding rheostat and greater than or equal to 1 / 20 of the resistance value of the second sliding rheostat.
[0018] Optionally, it further includes a capacitor, and the capacitor is connected in parallel with the resistor component.
[0019] The present utility model further provides a wafer detection machine platform, which is characterized in that it includes:
[0020] A support module, including a substrate and support plates symmetrically and fixedly installed on both sides of the substrate.
[0021] A circuit module, including a detection module and a monitoring module. The circuit module is fixedly installed on one side of the substrate in the middle of the support plate. The detection module is a combination of one or several of the detection modules of the above wafer detection machine platform. The monitoring module includes a single-chip microcomputer and a memory, and is used to monitor the number of times of detecting wafers.
[0022] Optionally, it further includes a positioning module. The positioning module includes a positioning groove, and the positioning groove is fixedly installed on the upper surface of the substrate and is used to position the loading box for loading wafers.
[0023] A lifting module, which is fixedly installed on one side of the substrate opposite to the circuit module, so that the wafer detection machine platform can move up and down.
[0024] Compared with the prior art, the beneficial effects of the present application include:
[0025] By optimizing the detection module of the original wafer inspection machine, the present utility model significantly improves the accuracy and sensitivity of the original wafer inspection machine. Specifically, the detection module of the original wafer inspection machine provided by the present utility model can intelligently identify original wafers of different materials and colors, effectively reducing the probability of misdetection and missed detection, and ensuring the accuracy of the detection results. At the same time, it also enhances the adaptability of the original wafer inspection machine to different types of wafers and broadens the detection range. In addition, the added monitoring module of the original wafer inspection machine not only improves the automation level of the detection, but also significantly improves the detection efficiency. Secondly, on the premise of ensuring the detection quality, by increasing the number of detections, the detection cycle is shortened, making the overall detection process more efficient and smooth. The original wafer inspection machine has achieved significant progress in equipment technology, making the wafer transmission more stable and reliable, reducing the detection errors caused by transmission problems, and further improving the accuracy and efficiency of the detection. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figure 1 Schematic diagram showing the structure of the original wafer inspection machine of the prior art.
[0027] Figure 2 Schematic diagram showing the detection module of the original wafer inspection machine of the prior art.
[0028] Figure 3 Schematic diagram showing the detection module of the first original wafer inspection machine of the present utility model.
[0029] Figure 4 Schematic diagram showing the detection module of the second original wafer inspection machine of the present utility model.
[0030] Figure 5 Schematic diagram showing the structure of the original wafer inspection machine of the present utility model.
[0031] REFERENCE NUMERALS
[0032] 1, substrate; 2, support plate; 3, lifting module; 4, circuit module; 5, positioning module; 6, bolt;
[0033] 41, detection module; 42, monitoring module;
[0034] 410, fixed value resistor; 411, signal detection module; 412, detection probe; 4121, triode; 4122, diode; 413, first sliding rheostat; 414, capacitor; 415, resistor assembly; 4151, second sliding rheostat; 4152, third sliding rheostat. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0035] The following describes the implementation modes of the present utility model through specific examples. Those skilled in the art can easily understand other advantages and effects of the present utility model from the content disclosed in this specification. The present utility model can also be implemented or applied through other different specific implementation modes. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present utility model.
[0036] It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present utility model. Although only the components related to the present utility model are shown in the illustrations, rather than being drawn according to the number, shape, and size of the components in actual implementation, the form, quantity, positional relationship, and ratio of each component in actual implementation can be arbitrarily changed on the premise of implementing the technical solution of the present invention, and the component layout form may also be more complex.
[0037] As Figure 1 shown, it is a schematic structural diagram of a raw wafer inspection machine in the prior art. The raw wafer inspection machine includes a support module, a lifting module 3, a circuit module 4, and a positioning module 5. The support module includes a substrate 1 and support plates 2 fixedly installed on both sides of the substrate 1. The lifting module 3 can adjust the height of the raw wafer inspection machine. The circuit module 4 includes a detection module 41. The lifting module 3 and the circuit module 4 are disposed opposite to each other on both sides of the substrate 1. The positioning module 5 includes a positioning groove fixedly installed on the upper surface of the substrate 1.
[0038] As Figure 2 shown, it is a schematic diagram of the detection module 41 in the circuit module 4 of the raw wafer inspection machine in the prior art. The detection module 41 includes a signal detection module 411, a detection probe 412, a capacitor 414, and a fixed-value resistor 410. Among them, the detection probe 412 is an integrated probe for receiving and transmitting. The detection probe 412 includes a triode 4121 and a diode 4122. The fixed-value resistor 410 is connected in series with the triode 4121. The diode 4122 is connected in parallel with the signal detection module 00 after being connected in series and then connected in parallel with the fixed-value resistor 410. The capacitor 414 is connected in parallel with the fixed-value resistor 410 and is also connected in parallel with the signal detection module 411.
[0039] When the raw wafer inspection machine rises close to the raw wafer, the diode 4122 in the detection probe 412 emits a signal to the raw wafer. After the triode 4121 receives the reflected signal, the triode 4121 conducts, and the fixed-value resistor 410 outputs a high level and feeds it back to the signal detection module 411. The signal detection module 411 receives and feeds back the signal to wait for the loading arm to pick up the wafer.
[0040] Due to the different shades of color on the back of the original film, the intensity of the reflected signals received by the detection probe 412 is different, which further leads to different voltages output by the fixed-value resistor 410. When the reflectivity of the back of the original film is relatively low, the voltage on the fixed-value resistor 410 is small, and the signal detection module 411 cannot detect a high level, and the original film detection machine cannot detect the original film; similarly, when the reflectivity of the back of the original film is relatively high, the voltage on the fixed-value resistor 410 is high, and the signal detection module 411 detects a high voltage earlier, resulting in the original film detection machine detecting the original film earlier, which may cause phenomena such as film dragging or even film cassette tipping during film feeding, and phenomena such as spacer or stacked films in the film cassette during film picking-up.
[0041] Moreover, the existing original film detection machine usually adopts single detection for the back of the original film, and there is a large contingency in the detection. This further exacerbates misdetection and missed detection, and may trigger the alarm system of the production line, affecting the overall production efficiency and stability.
[0042] Embodiment 1
[0043] This embodiment provides a detection module for an original film detection machine. As Figure 3 shown, it is a schematic diagram of the detection module 41 in the original film detection machine. It can be seen from Figure 3 this that the detection module 41 includes a signal detection module 411, a detection probe 412, and a first sliding rheostat 413. The detection probe 412 is an integrated receiving and transmitting probe, which is used to receive and transmit detection signals. The detection probe 412 includes a triode 4121 and a diode 4122. Among them, the diode 4122 emits signals to the original film, and the triode 4121 receives the reflected signals from the original film. The signal detection module 411 is electrically connected to the detection probe 412, and the signal detection module is used to receive and feedback the electrical signals from the detection probe 412. Specifically, the triode 4121 is connected in series with the first sliding rheostat 413, and the diode 4122 is connected in series with the signal detection module 411 and then connected in parallel with the first sliding rheostat 413.
[0044] Generally, the resistance value of the first sliding rheostat 413 is related to the voltage applied to the circuit and can be adjusted according to the actual situation. Generally, the resistance value range of the first sliding rheostat 413 is 1 KΩ to 5 KΩ. The resistance value of the first sliding rheostat 413 in this embodiment is 2 KΩ.
[0045] When the loading box for the original wafer is placed on the original wafer detection machine table, the diode 4122 emits a signal to the back of the original wafer, and the triode 4121 receives the reflected signal from the back of the original wafer. When the triode 4121 conducts, but the reflectivity of the back of the original wafer to the signal is low, the current in the branch of the triode 4121 and the first sliding rheostat 413 is small. The resistance value of the first sliding rheostat 413 in the loop formed with the signal detection module 411 can be increased, so as to increase the voltage received by the signal detection module 411. On the contrary, when the triode 4121 conducts and the reflectivity of the back of the original wafer to the signal is high, the current in the branch of the triode 4121 and the first sliding rheostat 413 is large. The resistance value of the first sliding rheostat 413 in the loop formed with the signal detection module 411 can be decreased, so as to decrease the voltage received by the signal detection module 411, to avoid device failure caused by signal saturation.
[0046] Generally, the resistance value of the first sliding rheostat 413 can be adjusted by manual adjustment or by adding a single-chip microcomputer module with advanced algorithms. In this embodiment, we manually adjust the resistance value of the first sliding rheostat 413 to adapt to original wafers of different materials and characteristics.
[0047] Please continue to refer to Figure 3 , in this embodiment, the detection module 41 on the original wafer detection machine table further includes a capacitor 414. The capacitor 414 is connected in parallel with the first sliding rheostat 413. The main function of the capacitor 414 is to protect the first sliding rheostat 413 from transient overvoltage or current impact.
[0048] The detection module 41 of the original wafer detection machine table provided in Embodiment 1 can adapt to original wafers with different reflectivities by adding the first sliding rheostat 413, so as to more accurately control the signal received by the signal detection module 411 and improve the detection sensitivity of the original wafer detection machine table.
[0049] Embodiment 2
[0050] This embodiment provides a second detection module 41 of the original wafer detection machine table. As Figure 4 shown, it shows a schematic diagram of the detection module 41 of the original wafer detection machine table. The fixed-value resistor 410 in the detection module 41 of the original wafer detection machine table in the prior art is replaced with a resistor component 415. The resistor component 415 includes a second sliding rheostat 4151 and a third sliding rheostat 4152. As Figure 4 shown, the triode 4121 is connected in series with the second sliding rheostat 4151 and the third sliding rheostat 4152. After the signal detection module 411 is connected in series with the diode 4122, it is connected in parallel with the resistor component 415.
[0051] Specifically, although the second sliding rheostat 4151 in the second embodiment and the first sliding rheostat 413 in the first embodiment are in the same position in the circuit, the resistance values of these two sliding rheostats are different, and the technical effects achieved in the detection module 41 are different. Therefore, the second sliding rheostat 4151 and the first sliding rheostat 413 cannot replace each other. Generally, the sum of the resistance values of the two sliding rheostats (the second sliding rheostat 4151 and the third sliding rheostat 4152) in the resistance component 415 is equal to the resistance value of the fixed resistor 410 in the prior art, and the resistance values of the second sliding rheostat 4151 and the third sliding rheostat 4152 can be adjusted according to the actual situation. Generally, the resistance value of the third sliding rheostat 4152 is less than or equal to 3 / 20 of the resistance value of the second sliding rheostat 4151 and greater than or equal to 1 / 20 of the resistance value of the second sliding rheostat 4151. Further, the resistance value of the third sliding rheostat 4152 is less than or equal to 3 / 25 of the second sliding rheostat 4151 and greater than or equal to 2 / 25 of the second sliding rheostat 4151. Further, the resistance value of the third sliding rheostat 4152 is less than or equal to 9 / 100 of the second sliding rheostat 4151 and greater than or equal to 11 / 100 of the second sliding rheostat 4151. Specifically, in this embodiment, the resistance value of the third sliding rheostat 4152 is about 1 / 10 of the second sliding rheostat 4151. The resistance value range of the second sliding rheostat 4151 is 0.9 KΩ to 5.4 kΩ, and the resistance value range of the third sliding rheostat 4152 is 0.1 KΩ to 0.5 kΩ. In this embodiment, the resistance value of the second sliding rheostat 4151 is 1.8 KΩ, and the resistance value of the third sliding rheostat 4152 is 0.2 KΩ. Specifically, the ratio setting of the resistance values of the second sliding rheostat 4151 and the third sliding rheostat 4152 is used to ensure the limit conditions for the normal operation of the detection probe 412. Therefore, the resistance values of the second sliding rheostat 4151 and the third sliding rheostat 4152 can be adjusted according to the adaptation conditions of the detection probe 412.
[0052] When the loading box for loading the original wafer is placed on the original wafer detection machine table, the diode 4122 emits a signal to the back of the original wafer, and the triode 4121 receives the reflected signal from the back of the original wafer. When the triode 4121 conducts, but the reflectivity of the back of the original wafer to the signal is low, the current in the branch where the triode 4121 and the resistance component 415 are located is small. The resistance value of the resistance component 415 can be increased to increase the voltage magnitude received by the signal detection module 411. On the contrary, when the triode 4121 conducts and the reflectivity of the back of the original wafer to the signal is high, the current in the branch where the triode 4121 and the resistance component 415 are located is large. The resistance value of the resistance component 415 in the loop formed with the signal detection module 411 can be reduced to increase the voltage magnitude received by the signal detection module 411.
[0053] Here, the resistance range of the third sliding rheostat 4152 is relatively small. Adjusting the resistance of the resistance component 415 is mainly achieved by adjusting the second sliding rheostat 4151. The third sliding rheostat 4152 is mainly used to set the offset of the signal. By adjusting the resistance of the second sliding rheostat, the resistance value of the entire circuit can be finely adjusted within a smaller range, and further, the voltage received by the signal detection module 411 is adjusted. Moreover, the third sliding rheostat 4152 also ensures that when the resistance value of the second sliding rheostat 4151 is adjusted, the entire circuit maintains a stable working state, and phenomena such as signal distortion or circuit short - circuit caused by too large or too small resistance value will not occur to damage the circuit.
[0054] In the second embodiment, a resistance component 415 including two sliding rheostats is used to replace the fixed - value resistor 410. And the resistance values of the two sliding rheostats are quite different, which can independently or cooperatively adjust the voltage in the circuit within a wider range. This fine - tuning ability is particularly important for scenarios that require precise voltage control to optimize signal quality. Through fine adjustment, it can be ensured that the signal intensity received by the signal detection module 411 is moderate and stable, effectively reducing signal distortion or noise interference caused by voltage fluctuations, thereby improving the accuracy of signal detection and the precision of the original - wafer inspection machine in identifying the original wafer.
[0055] Embodiment Three
[0056] This embodiment provides an original - wafer inspection machine. As Figure 5 shown. The original - wafer inspection machine includes a support module and a circuit module 4. The support module includes a substrate 1 and support plates 2 fixedly installed on both sides of the substrate 1. The support plates 2 are symmetrically arranged on both sides of the substrate 1. The circuit module 4 is fixedly installed on one side of the substrate 1. The circuit module 4 includes a detection module 41 and a monitoring module 42. The detection module 41 can be the detection module 41 which is any one or a combination of several in Embodiment One or Embodiment Two. The monitoring module 42 includes components such as a single - chip microcomputer, a memory, an input - output interface, a reset circuit, a power supply module, and a display module. The monitoring module 42 is used to control the number of times of detecting the original wafer. According to user needs, the number of detections is preset in the single - chip microcomputer, and the machine will automatically execute multiple detection processes according to the set value. By increasing the number of detections of the original wafer, the accuracy of the detection result can be effectively improved, and the probability of misdetection or missed detection can be effectively reduced.
[0057] Optionally, the original - wafer inspection machine provided in this embodiment further includes a lifting module 3. The lifting module 3 is fixedly installed on the side of the substrate opposite to the circuit module 4. The lifting module 3 includes a motor, a guide rail, a transmission mechanism, and a corresponding control system, etc. The lifting module 3 can realize the up - and - down movement of the original - wafer inspection machine.
[0058] Optionally, the materials of the substrate 1 and the support plate 2 can be materials with a certain strength, such as structural steel, aluminum alloy, or carbon fiber composite material. Key structures such as the guide rails in the lifting module 3 can be made of special alloy materials or engineering plastics and other materials. Optionally, the original sheet inspection machine also includes a positioning module 5, which is fixedly connected to the upper surface of the substrate 1. The positioning module 5 includes a positioning groove for positioning the loading box for loading the original sheet. Generally, the ways of fixed connection include socket connection, welding, threaded connection, bonding, or other connection ways. From Figure 5 It can be seen that the connection method adopted in this embodiment is threaded connection, and each module is fixedly connected to the substrate 1 through bolts 6.
[0059] Optionally, the monitoring module 42 of the original sheet inspection machine provided in this embodiment can also achieve manual control of the detection times through an intuitive and easy-to-operate interface. The operator can adjust the detection times at any time according to the actual working needs to meet the detection requirements of different batches or types of original sheets, increasing the flexibility and convenience of using the original sheet inspection machine.
[0060] The original sheet inspection machine provided in this embodiment is added with a monitoring module 42 for adjusting the detection times. The detection times of the original sheet can be increased according to the actual working needs, effectively reducing the probability of misdetection or missed detection and improving the accuracy of the detection results.
[0061] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.
Claims
1. A detection module of a raw sheet detection machine, characterized in that, Comprising: A detection probe for transmitting and receiving detection signals; A resistance component including a slide rheostat, the resistance component being electrically connected to the detection probe; A signal detection module for receiving and feeding back electrical signals from the resistance component, the signal detection module being electrically connected to the detection probe.
2. The detection module of the original film detection machine according to claim 1, wherein The signal detection module is in series with the detection probe, and the signal detection module is in parallel with the resistance component.
3. The detection module of the original film detection machine according to claim 1, wherein The detection probe includes: A diode in series with the signal detection module, the diode being used to emit signals to the original wafer; A triode in series with the resistance component, the triode receiving reflected signals from the original wafer.
4. The detection module of the original film detection machine according to claim 1, characterized in that, The resistance component further includes a fixed resistor.
5. The detection module of the original film detection machine according to claim 1 or 4, characterized in that The resistance component includes a first slide rheostat.
6. The detection module of the original film detection machine according to claim 1 or 4, characterized in that, The resistance component includes a second slide rheostat and a third slide rheostat.
7. The detection module of the original film detection machine according to claim 6, characterized in that, The resistance value of the third slide rheostat is less than or equal to 3 / 20 of the resistance value of the second slide rheostat and greater than or equal to 1 / 20 of the resistance value of the second slide rheostat.
8. The detection module of the original film detection machine according to claim 1, wherein It further includes a capacitor in parallel with the resistance component.
9. An original sheet inspection machine, characterized in that, Comprising: A support module including a substrate and support plates symmetrically and fixedly installed on both sides of the substrate; A circuit module including a detection module and a monitoring module, the circuit module being fixedly installed on one side of the substrate in the middle of the support plates, the detection module being the detection module of the original wafer detection machine described in any one of claims 1-8; the monitoring module includes a single-chip microcomputer and a memory for monitoring the number of times of detecting the original wafer.
10. The original film inspection machine according to claim 9, characterized in that, It further includes: A positioning module including a positioning groove fixedly installed on the upper surface of the substrate for positioning a loading box for loading the original wafer; A lifting module fixedly installed on one side of the substrate opposite to the circuit module to enable the original wafer detection machine to move up and down.