Dustproof plate structure of high-power direct-current electronic load

Abstract

The utility model relates to the technical field of high-power direct-current electronic loads, in particular to a dustproof plate structure of a high-power direct-current electronic load. Each high-power direct-current electronic load module is arranged in a cuboid shape and comprises a radiator in the center and a printed board installed on the upper surface of the radiator, four rows of MOS tubes which are not equidistant are integrated on the printed board, a dustproof plate structure is arranged on the periphery of each MOS tube, and the dustproof plate structure comprises an MOS dustproof plate, a side baffle and a front baffle. And the peripheral space of the MOS tube forms a dustproof and moistureproof closed space through the dustproof plate structure. According to the high-power direct-current electronic load, heat dissipation is combined with dust prevention and moisture prevention, and the dust-proof plate structure is tightly attached and stably connected, so that high-efficiency heat dissipation is ensured, and meanwhile, damage of dust and moisture to precise electronic elements such as MOS (metal oxide semiconductor) tubes and the like is effectively prevented, the service life of the high-power direct-current electronic load is prolonged, and the reliability of the high-power direct-current electronic load in a severe working environment is enhanced.

Description

Technical Field

[0001] The utility model relates to the technical field of high-power DC electronic loads, and particularly relates to a dust-proof plate structure for a high-power DC electronic load. Background Art

[0002] High-power DC electronic loads have shown extensive application potential in the fields of power testing and new energy. However, the significant heat effect during their operation, especially when MOS transistors are used as the core power switching components, their high heat generation poses a major challenge. In addition, precision components such as MOS transistors have extremely high requirements for environmental cleanliness. The intrusion of dust and moisture may directly lead to short circuits, leakage, and even performance degradation, seriously weakening the stability and service life of the equipment. In response to this technical bottleneck, the industry has actively explored. As disclosed in Chinese Patent CN114823559A, by introducing a magnetic or fixed dust-proof net at the front end of the equipment, an attempt is made to solve the dust-proof problem. Unfortunately, the current solutions on the market still face many limitations: Although the setting of the dust-proof net can block some dust, it inevitably restricts air circulation, thereby affecting the heat dissipation efficiency. At the same time, the maintenance (such as cleaning and replacement) of the dust-proof net is highly complex and is likely to become a new source of dust accumulation, which is instead unfavorable for the long-term stable operation of the equipment; for high-power systems containing a large number of MOS transistors, using transistor seats to wrap each MOS transistor can provide certain protection, but this significantly increases the manufacturing complexity, and the voltage withstand performance of the transistor seats may not be sufficient to effectively resist the risks brought by dust accumulation under extreme working conditions. Summary of the Utility Model

[0003] The technical problem to be solved by the utility model is: to overcome the deficiencies of the prior art and provide a dust-proof plate structure for a high-power DC electronic load.

[0004] The technical solution adopted by the utility model is as follows:

[0005] A dust-proof plate structure for a high-power DC electronic load, including a number of high-power DC electronic load modules arranged in an assembly housing; each high-power DC electronic load module is arranged in a cuboid shape, including a radiator at the center and a printed circuit board mounted on the upper surface of the radiator. The printed circuit board is integrated with four columns of MOS transistors with unequal distances. A dust-proof plate structure is arranged around the MOS transistors. The dust-proof plate structure includes a MOS dust-proof plate, side baffles, and a front baffle, where:

[0006] The MOS dust-proof plate is mounted above the MOS transistors. It is arranged in a long strip shape, and its bottom surface is provided with bayonets that match the MOS transistors.

[0007] The side baffles are mounted on both sides of the printed circuit board. They extend upward from the bottom of the radiator to the top edge of the MOS transistors, and their tops are flush with the MOS dust-proof plate.

[0008] The front baffle is installed at the end of the printed circuit board, sealing from the end of the radiator to the end of the MOS transistor, and its top is flush with the MOS dust-proof plate;

[0009] The peripheral space of the MOS transistor is formed into a dust-proof and moisture-proof enclosed space through the dust-proof plate structure.

[0010] In this technical solution, the dust-proof plate structure composed of the MOS dust-proof plate, side baffle and front baffle jointly closes the peripheral space of the MOS transistor to form a dust-proof and moisture-proof enclosed environment, thereby protecting the MOS transistor from the influence of the external environment. Specifically, a large amount of heat is generated when the high-power DC electronic load is working. Especially, as the main power switching element, the MOS transistor generates a particularly significant amount of heat. A radiator is set in the center of the module to effectively dissipate the heat generated by components such as the MOS transistor, preventing component damage or performance degradation caused by excessive temperature. Precision electronic components such as MOS transistors are very sensitive to dust and moisture. Once these impurities enter, it will cause short circuits, leakage or unstable performance. The setting of the dust-proof plate structure is used to completely enclose the MOS transistor and its surrounding area to form a dust-proof and moisture-proof enclosed space, thereby protecting the MOS transistor from the influence of the external environment. The bayonet set on the bottom surface of the MOS dust-proof plate and matching with the MOS transistor not only ensures the tight fit between the dust-proof plate and the MOS transistor, but also facilitates installation and disassembly, and is convenient for subsequent maintenance and replacement. The side baffle not only enhances the stability of the dust-proof plate structure, but also ensures the comprehensiveness of the dust-proof effect, preventing dust and moisture from invading from the side or the front end. The cooperation of the card slot and the claw realizes a more stable connection. Each high-power DC electronic load module is arranged in a cuboid shape, which is convenient for modular layout and expansion in the assembly housing.

[0011] In addition, according to the above-mentioned high-power DC electronic load dust-proof plate structure of the present invention, it may also have the following additional technical features:

[0012] According to an embodiment of the present invention, mounting seats are respectively arranged on both sides of the bottom of the MOS dust-proof plate, and the MOS dust-proof plate is fixed on the radiator through the mounting seats.

[0013] In this technical solution, mounting seats are arranged on both sides of the bottom of the MOS dust-proof plate, and the dust-proof plate is firmly fixed on the radiator by using these mounting seats to ensure the stability and reliability of the dust-proof plate structure.

[0014] According to an embodiment of the present invention, the bayonet of the MOS dust-proof plate is arranged between the mounting seats, and the bayonet and the MOS transistor are arranged in a staggered manner for cooperation.

[0015] The technical solution optimizes the contact and sealing effect between the dustproof plate and the MOS tube by arranging the bayonet of the MOS dustproof plate in a staggered manner, thereby further enhancing the dustproof and moisture-proof capabilities.

[0016] According to an embodiment of the present invention, the length and width of the MOS dustproof plate both meet the requirement of completely covering the entire MOS tube.

[0017] This technical solution ensures that the length and width of the MOS dustproof plate meet the requirement of completely covering the entire MOS tube, so as to achieve dustproof protection without dead angles and ensure the cleanliness of the MOS tube and its surrounding environment.

[0018] According to an embodiment of the utility model, the front baffle is located at the vertical edge of the radiator, and the front baffle wraps the vertical edge and is extended along the side baffle to be provided with upper and lower claws.

[0019] The technical solution arranges the front baffle at the vertical edge of the radiator, and wraps the vertical edge to extend two upper and lower claws along the side baffle to strengthen the connection strength between the front baffle and the radiator and the side baffle, thereby improving the overall stability of the dustproof plate structure.

[0020] According to an embodiment of the utility model, a clamping groove matched with the clamping claw is provided on the side baffle.

[0021] The technical solution realizes a close connection between the front baffle and the side baffle by arranging a clamping groove on the side baffle that matches the clamping claw of the front baffle, thereby enhancing the sealing and stability of the dustproof plate structure.

[0022] Compared with the prior art, the utility model has the following beneficial effects:

[0023] (1) By combining heat dissipation with dust and moisture prevention, the close fit and firm connection of the dustproof plate structure ensures efficient heat dissipation while effectively preventing dust and moisture from damaging precision electronic components such as MOS tubes, thereby extending the service life of high-power DC electronic loads and enhancing their reliability in harsh working environments;

[0024] (2) The modular design of MOS dust shield, side baffle and front baffle facilitates production assembly and mass production, reduces maintenance costs, makes the repair and replacement process simpler and faster, and improves overall production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a structural schematic diagram of the utility model.

[0026] Figure 2 It is a structural schematic diagram of the assembled shell.

[0027] In the figure: 1. Radiator; 2. Printed circuit board; 3. MOS transistor; 4. MOS dust-proof plate; 5. Side baffle; 6. Front baffle; 7. Assembly housing. Specific embodiments

[0028] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0029] Embodiment 1

[0030] As Figure 1 and Figure 2 shown, this embodiment provides a dust-proof plate structure for a high-power DC electronic load, including a plurality of high-power DC electronic load modules arranged in the assembly housing 7; each high-power DC electronic load module is arranged in a cuboid shape, including a radiator 1 at the center, and a printed circuit board 2 installed on the upper surface of the radiator 1. Four columns of non-equidistant MOS transistors 3 are integrated on the printed circuit board 2. A dust-proof plate structure is arranged around the MOS transistor 3. The dust-proof plate structure includes a MOS dust-proof plate 4, a side baffle 5 and a front baffle 6, wherein:

[0031] The MOS dust-proof plate 4 is installed above the MOS transistor 3. It is arranged in a long strip shape, and a bayonet matching the MOS transistor 3 is arranged on its bottom surface;

[0032] The side baffle 5 is installed on both sides of the printed circuit board 2. It extends upward from the bottom of the radiator 1 to the top edge of the MOS transistor 3, and its top is flush with the MOS dust-proof plate 4;

[0033] The front baffle 6 is installed at the end of the printed circuit board 2. It seals from the end of the radiator 1 to the end of the MOS transistor 3, and its top is flush with the MOS dust-proof plate 4;

[0034] The dust-proof plate structure forms a dust-proof and moisture-proof enclosed space around the MOS transistor 3.

[0035] As Figure 1 and Figure 2As shown in the figure, the technical solution forms a dust-proof and moisture-proof enclosed environment by jointly enclosing the peripheral space of the MOS transistor 3 with a dust-proof plate structure composed of a MOS dust-proof plate 4, side baffles 5, and a front baffle 6, thereby protecting the MOS transistor 3 from the influence of the external environment. Specifically, a large amount of heat is generated when the high-power DC electronic load is working. Especially, as the main power switching element, the MOS transistor 3 generates a particularly significant amount of heat. A radiator 1 is arranged in the center of the module to effectively dissipate the heat generated by components such as the MOS transistor 3, preventing component damage or performance degradation caused by excessive temperature. Precision electronic components such as the MOS transistor 3 are very sensitive to dust and moisture. Once these impurities enter, it will cause short circuits, leakage, or unstable performance. The setting of the dust-proof plate structure is used to completely enclose the MOS transistor 3 and its surrounding area, forming a dust-proof and moisture-proof enclosed space, thereby protecting the MOS transistor 3 from the influence of the external environment. The bayonet arranged on the bottom surface of the MOS dust-proof plate 4 and mating with the MOS transistor 3 not only ensures the tight fit between the dust-proof plate and the MOS transistor 3, but also facilitates installation and disassembly, making subsequent maintenance and replacement convenient. The side baffle 5 not only enhances the stability of the dust-proof plate structure, but also ensures the comprehensiveness of the dust-proof effect, preventing dust and moisture from invading from the side or the front. The cooperation of the card slot and the claw realizes a more stable connection. Each high-power DC electronic load module is arranged in a cuboid shape, which is convenient for modular layout and expansion in the assembly housing 7.

[0036] In addition, according to the above-mentioned dust-proof plate structure of the high-power DC electronic load proposed by the present invention, the following additional technical features may also be provided:

[0037] According to an embodiment of the present invention, mounting seats are respectively arranged on both sides of the bottom of the MOS dust-proof plate 4, and the MOS dust-proof plate 4 is fixed to the radiator 1 through the mounting seats.

[0038] In this technical solution, mounting seats are arranged on both sides of the bottom of the MOS dust-proof plate 4, and these mounting seats are used to firmly fix the dust-proof plate on the radiator 1, ensuring the stability and reliability of the dust-proof plate structure.

[0039] According to an embodiment of the present invention, the bayonet of the MOS dust-proof plate 4 is arranged between the mounting seats, and the bayonet and the MOS transistor 3 are arranged in a staggered manner for cooperation.

[0040] In this technical solution, the bayonet of the MOS dust-proof plate 4 and the MOS transistor 3 are arranged in a staggered manner for cooperation to optimize the contact and sealing effect between the dust-proof plate and the MOS transistor 3, further enhancing the dust-proof and moisture-proof capabilities.

[0041] According to an embodiment of the present invention, the length and width of the MOS dust-proof plate 4 both meet the requirement of completely covering the entire MOS transistor 3.

[0042] This technical solution ensures that the length and width of the MOS dustproof plate 4 meet the requirement of completely covering the entire MOS tube 3, so as to achieve dustproof protection without dead angles and ensure the cleanliness of the MOS tube 3 and its surrounding environment.

[0043] According to an embodiment of the present invention, the front baffle plate 6 is located at the vertical edge of the radiator 1 , and the front baffle plate 6 wraps around the vertical edge and is extended along the side baffle plate 5 to be provided with two upper and lower claws.

[0044] The technical solution arranges the front baffle 6 at the vertical edge of the radiator 1, and wraps the vertical edge to extend two upper and lower claws along the side baffle 5 to strengthen the connection strength between the front baffle 6 and the radiator 1 and the side baffle 5, thereby improving the overall stability of the dustproof plate structure.

[0045] According to an embodiment of the utility model, the side baffle 5 is provided with a clamping groove matched with the clamping claw.

[0046] This technical solution realizes a tight connection between the front baffle 6 and the side baffle 5 by providing a clamping groove on the side baffle 5 that matches with the clamping claw of the front baffle 6, thereby enhancing the sealing and stability of the dustproof plate structure.

[0047] The usage process of the above embodiment is as follows:

[0048] like Figure 1 and Figure 2 As shown, when the high-power DC electronic load is working, the MOS tube 3 as the main power switch element generates a large amount of heat; the heat sink 1 quickly dissipates the heat to prevent the element from overheating; the MOS dustproof plate 4, the side baffle plate 5 and the front baffle plate 6 of the dustproof plate structure are tightly fitted and surround the MOS tube 3 and its surrounding area to form a dust-proof and moisture-proof enclosed space; the MOS dustproof plate 4 is staggered with the MOS tube 3 through the bayonet at the bottom to ensure a tight seal and facilitate installation and disassembly; the side baffle plate 5 and the front baffle plate 6 respectively prevent dust and moisture from invading from the side and the front end, further enhancing the protection effect; the entire dustproof plate structure is stable and reliable, which not only protects the MOS tube 3 from environmental influences, but also facilitates subsequent maintenance and replacement, ensuring the long-term stable operation of the electronic load.

[0049] Although the utility model is described in detail by referring to the accompanying drawings and in combination with the preferred embodiments, the utility model is not limited thereto. Without departing from the spirit and essence of the utility model, a person of ordinary skill in the art may make various equivalent modifications or substitutions to the embodiments of the utility model, and these modifications or substitutions shall be within the scope of the utility model / any person of ordinary skill in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the utility model, and they shall be within the scope of protection of the utility model. Therefore, the scope of protection of the utility model shall be based on the scope of protection of the claims.

Claims

1. A dust-proof plate structure of a high-power DC electronic load, characterized in that, It includes several high-power DC electronic load modules arranged in an assembly housing (7); each high-power DC electronic load module is arranged in a cuboid shape and includes a radiator (1) at the center and a printed circuit board (2) mounted on the upper surface of the radiator (1). Four columns of MOS transistors (3) with unequal pitches are integrated on the printed circuit board (2). A dust-proof plate structure is arranged around the MOS transistors (3). The dust-proof plate structure includes a MOS dust-proof plate (4), side baffles (5), and a front baffle (6), where: The MOS dust-proof plate (4) is mounted above the MOS transistors (3). It is arranged in a long strip shape, and a bayonet that matches the MOS transistors (3) is provided on its bottom surface. The side baffles (5) are mounted on both sides of the printed circuit board (2). They extend upward from the bottom of the radiator (1) to the top edge of the MOS transistors (3), and their tops are flush with the MOS dust-proof plate (4). The front baffle (6) is mounted at the end of the printed circuit board (2). It seals from the end of the radiator (1) to the end of the MOS transistors (3), and its top is flush with the MOS dust-proof plate (4). The dust-proof plate structure forms a dust-proof and moisture-proof enclosed space around the MOS transistors (3).

2. The dust-proof plate structure of the high-power DC electronic load according to claim 1, characterized in that Mounting seats are respectively arranged on both sides of the bottom of the MOS dust-proof plate (4), and the MOS dust-proof plate (4) is fixed to the radiator (1) through the mounting seats.

3. The dust-proof plate structure of the high-power DC electronic load according to claim 2, characterized in that, The bayonets of the MOS dust-proof plate (4) are arranged between the mounting seats, and the bayonets and the MOS transistors (3) are arranged in an interleaved manner for cooperation.

4. The dust-proof plate structure of the high-power DC electronic load according to claim 1 or 3, characterized in that, The length and width of the MOS dust-proof plate (4) both meet the requirement of completely covering the entire MOS transistors (3).

5. The dust-proof plate structure of the high-power DC electronic load according to claim 1, characterized in that, The front baffle (6) is located at the vertical edge of the radiator (1). The front baffle (6) wraps the vertical edge and is provided with two upper and lower claws extending along the side baffle (5).

6. The dust-proof plate structure of the high-power DC electronic load according to claim 5, wherein, The side baffle (5) is provided with a slot that matches the claw.

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