Uniform flow structure of single-cavity atomic layer deposition equipment

Abstract

The utility model provides a flow uniformizing structure of single-cavity type atomic layer deposition equipment, and relates to the technical field of semiconductor equipment. Comprising a cavity and a cavity cover arranged on the cavity, and uniform flow pipelines communicated with each other are arranged in the cavity cover and connected with a gas inlet pipeline to be used for introducing reaction gas; a flow uniformizing assembly is arranged at the position, close to the cavity cover, of the cavity, so that reaction gas flowing out of a flow uniformizing pipeline is uniformly dispersed; and a heating device is arranged on the cavity cover and is used for preheating the gas guided into the uniform flow pipeline. According to the scheme, the uniformity of the reaction gas in the chamber can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, and more specifically, to a flow equalizing structure for a single-chamber atomic layer deposition equipment. Background Art

[0002] In an atomic layer deposition equipment, reaction gases need to be introduced into the chamber. Generally, the reaction gases are directly introduced into the reaction chamber through gas pipelines. However, in this gas inlet mode, there is a problem of uneven concentration distribution of the reaction gases in the chamber, and the preheating temperature of the gases entering the reaction chamber is relatively low, which will affect the reaction quality and reduce the efficiency of the gas-phase reaction. Summary of the Utility Model

[0003] The utility model discloses a flow equalizing structure for a single-chamber atomic layer deposition equipment, aiming at improving the problems mentioned above.

[0004] The utility model adopts the following solutions:

[0005] A flow equalizing structure for a single-chamber atomic layer deposition equipment includes a chamber and a chamber cover arranged on the chamber. A flow equalizing pipeline which is mutually communicated is arranged in the chamber cover, and the flow equalizing pipeline is connected with an air inlet pipeline for introducing reaction gases; a flow equalizing component is arranged in the chamber near the chamber cover to make the reaction gases flowing out of the flow equalizing pipeline disperse evenly; a heating device is arranged on the chamber cover to preheat the gases introduced into the flow equalizing pipeline.

[0006] Further, the flow equalizing component includes a first flow equalizing plate and a second flow equalizing plate. A plurality of flow equalizing holes are arranged on both the first flow equalizing plate and the second flow equalizing plate, and the flow equalizing holes on the first flow equalizing plate and the second flow equalizing plate are staggered.

[0007] Further, a first gas equalizing chamber is formed between the first flow equalizing plate and the chamber cover, and a second gas equalizing chamber is formed between the first flow equalizing plate and the second flow equalizing plate.

[0008] Further, a plurality of flow equalizing pipeline air outlet holes are arranged on one side of the chamber cover facing the chamber, and each air outlet hole is communicated with the flow equalizing pipeline.

[0009] Further, an air inlet mounting plate is arranged on the chamber cover, and a first air inlet pipeline and a second air inlet pipeline which are communicated with the flow equalizing pipeline are arranged on the air inlet mounting plate to independently introduce reaction gases into the flow equalizing pipeline.

[0010] Further, the air inlet mounting plate is detachably mounted on the chamber cover.

[0011] Advantageous Effects:

[0012] In this solution, by setting a flow-equalizing pipeline and a flow-equalizing component, the gas is dispersed in the flow-equalizing pipeline inside the chamber cover before entering the chamber, and then the dispersed gas is further dispersed doubly by the flow-equalizing component, so that the reaction gas is evenly distributed in the chamber, which helps to improve the reaction effect. In addition, a heating device is provided on the chamber cover to preheat the reaction gas during the dispersion process of the reaction gas, so that the reaction gas can quickly reach the temperature required for the reaction after entering the chamber, improving the reaction efficiency and also being beneficial to improving the ALD coating effect. Description of the Drawings

[0013] Figure 1 is a schematic structural diagram of a flow-equalizing structure of a single-chamber atomic layer deposition device according to an embodiment of the present invention;

[0014] Figure 2 is a schematic cross-sectional structural diagram of a flow-equalizing structure of a single-chamber atomic layer deposition device according to an embodiment of the present invention;

[0015] Figure 3 is a schematic structural diagram of a chamber cover of a flow-equalizing structure of a single-chamber atomic layer deposition device according to an embodiment of the present invention;

[0016] Figure 4 is a schematic structural diagram of a first flow-equalizing plate of a flow-equalizing structure of a single-chamber atomic layer deposition device according to an embodiment of the present invention;

[0017] Figure 5 is a schematic structural diagram of a second flow-equalizing plate of a flow-equalizing structure of a single-chamber atomic layer deposition device according to an embodiment of the present invention;

[0018] Reference numerals: chamber 1, chamber cover 2, flow-equalizing pipeline 21, air outlet hole 22, intake air mounting plate 3, first intake air pipeline 4, second intake air pipeline 5, first flow-equalizing plate 6, second flow-equalizing plate 7, flow-equalizing hole 71, first air equalizing chamber 8, second air equalizing chamber 9. Detailed Description of the Embodiment

[0019] Combined with Figures 1 to 5 As shown, this embodiment provides a flow-equalizing structure of a single-chamber atomic layer deposition device, including a chamber 1 and a chamber cover 2 provided on the chamber 1. A flow-equalizing pipeline 21 that is interconnected is provided inside the chamber cover 2, and the flow-equalizing pipeline 21 is connected to an intake air pipeline for introducing a reaction gas; a flow-equalizing component is provided near the chamber 1 and the chamber cover 2 to evenly disperse the reaction gas flowing out of the flow-equalizing pipeline 21; a heating device (not shown) is provided on the chamber cover 2 to preheat the gas introduced into the flow-equalizing pipeline 21.

[0020] Combined with Figures 1 to 3As shown, in this embodiment, the chamber 1 can be made of aluminum metal. The chamber cover 2 is detachably provided on the chamber 1, and the chamber cover 2 is hermetically connected to the chamber 1. A flow equalizing pipe 21 is formed in the chamber cover 2 with a crisscross distribution. An air inlet mounting plate 3 is detachably installed on the chamber cover 2. A first air inlet pipe 4 and a second air inlet pipe 5 communicating with the flow equalizing pipe 21 are provided on the air inlet mounting plate 3 to independently introduce reaction gas into the flow equalizing pipe 21. Here, both the first air inlet pipe 4 and the second air inlet pipe 5 communicate with the flow equalizing pipe 21 and are independent of each other to reduce the influence of residual gas on the pipes. On the side of the chamber cover 2 facing the chamber 1, a plurality of flow equalizing pipe outlet holes 22 are provided. Each outlet hole 22 communicates with the flow equalizing pipe 21. The reaction gas introduced from the air inlet pipe flows in the flow equalizing pipe 21 to disperse the reaction gas for the first time, and then the reaction gas flows out from the outlet holes 22. The plurality of outlet holes 22 disperse the reaction gas for the second time, improving the uniformity of the reaction gas entering the chamber 1.

[0021] A heating device is provided on the chamber cover 2. The heating device is a prior art and will not be elaborated here. The heating device can act on the reaction gas in the flow equalizing pipe 21 to preheat the reaction gas in the flow equalizing pipe 21, so that the reaction gas can be quickly coated after entering the chamber 1, improving the coating efficiency and quality, and further improving the uniformity of the reaction.

[0022] Combined with Figures 2 to 5 As shown, the flow equalizing assembly is arranged in the chamber 1 and close to the chamber cover 2. Specifically, the flow equalizing assembly includes a first flow equalizing plate 6 and a second flow equalizing plate 7. A plurality of flow equalizing holes 71 are provided on both the first flow equalizing plate 6 and the second flow equalizing plate 7, and the flow equalizing holes 71 on the first flow equalizing plate 6 and the second flow equalizing plate 7 are staggered. The first flow equalizing plate 6 and the second flow equalizing plate 7 can be arranged parallel to the chamber cover 2, and a first air equalizing chamber 8 is formed between the first flow equalizing plate 6 and the chamber cover 2, and a second air equalizing chamber 9 is formed between the first flow equalizing plate 6 and the second flow equalizing plate 7. The first flow equalizing plate 6 and the second flow equalizing plate 7 can disperse the reaction gas for the third time and the fourth time when the reaction gas passes through, thus greatly improving the distribution uniformity of the reaction gas in the chamber 1 to improve the coating quality.

[0023] In this embodiment, by providing a flow-equalizing pipeline and a flow-equalizing component, the gas is dispersed in the flow-equalizing pipeline in the cavity cover 2 before entering the chamber 1, and then the dispersed gas is further dispersed doubly by the flow-equalizing component, so that the reaction gas is evenly distributed in the chamber 1, which helps to improve the reaction effect. A heating device is provided on the cavity cover 2 to preheat the reaction gas during the dispersion process of the reaction gas, so that the reaction gas can quickly reach the temperature required for the reaction after entering the chamber 1, improving the reaction efficiency and also being beneficial to improving the ALD coating effect.

[0024] It should be understood that the above is only the preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments. All technical solutions falling within the idea of the present invention belong to the protection scope of the present invention.

[0025] The above introduction to the drawings used in the embodiments only shows some embodiments of the present invention and should not be regarded as a limitation of the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

Claims

1. A flow homogenizing structure for a single-chamber atomic layer deposition device, comprising a chamber and a chamber lid provided on the chamber, characterized in that, A flow equalizing pipeline that is interconnected is provided inside the chamber cover. The flow equalizing pipeline is connected to an intake pipeline for introducing reaction gas. A flow equalizing component is provided near the chamber cover inside the chamber to evenly disperse the reaction gas flowing out of the flow equalizing pipeline. A heating device is provided on the chamber cover to preheat the gas introduced into the flow equalizing pipeline.

2. The flow uniformity structure of the single-chamber atomic layer deposition equipment according to claim 1, wherein The flow equalizing component includes a first flow equalizing plate and a second flow equalizing plate. A plurality of flow equalizing holes are provided on both the first flow equalizing plate and the second flow equalizing plate, and the flow equalizing holes on the first flow equalizing plate and the second flow equalizing plate are staggered.

3. The flow homogenization structure of the single-chamber atomic layer deposition equipment according to claim 2, wherein, A first gas equalizing chamber is formed between the first flow equalizing plate and the chamber cover, and a second gas equalizing chamber is formed between the first flow equalizing plate and the second flow equalizing plate.

4. The uniform flow structure of the single-chamber atomic layer deposition equipment according to claim 1, characterized in that, A plurality of flow equalizing pipeline outlet holes are provided on the side of the chamber cover facing the chamber, and each outlet hole is communicated with the flow equalizing pipeline.

5. The flow uniformity structure of the single-chamber atomic layer deposition equipment according to claim 1, characterized in that, An intake installation plate is provided on the chamber cover. A first intake pipeline and a second intake pipeline that are communicated with the flow equalizing pipeline are provided on the intake installation plate to independently introduce reaction gas into the flow equalizing pipeline.

6. The flow homogenizing structure of the single-chamber atomic layer deposition equipment according to claim 5, characterized in that The intake installation plate is detachably installed on the chamber cover.

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