Gas mixing device and semiconductor equipment

Abstract

The utility model provides a gas mixing device and semiconductor equipment. The gas mixing device comprises a first mixing pipe section, an accelerating pipe section, a second mixing pipe section, a rotational flow pipe section and a discharge pipe section which are connected in sequence, the inner diameter of the first mixing pipe section is larger than that of the discharge pipe section, and the inner diameter of the discharge pipe section is larger than that of the second mixing pipe section; the inner diameter of the accelerating pipe section is gradually reduced in the direction from the first mixing pipe section to the second mixing pipe section; the inner diameter of the rotational flow pipe section is gradually increased in the direction from the second mixing pipe section to the discharging pipe section. Through the pipe sections with different inner diameters, namely the first mixing pipe section, the accelerating pipe section, the second mixing pipe section, the rotational flow pipe section and the exhaust pipe section, the gas flow speed and the gas flow direction can be changed, so that the gas mixing effect is improved, and the gas mixing uniformity is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a gas mixing device and a semiconductor device. Background Art

[0002] The semiconductor technology field is constantly upgrading and updating. The manufacturing size of integrated circuits is gradually shrinking, and more and more attention is paid to the etching uniformity of a single wafer. Improving the uniformity has also become a key to improving the yield.

[0003] The gas injector of traditional semiconductor etching equipment usually has one air inlet and one air outlet. After the gas enters the injector, due to the nature of the fluid itself, the central flow velocity will be greater than the edge flow velocity, making the gas entering the etching equipment mix unevenly, and further affecting the dispersion uniformity of the gas in the etching chamber.

[0004] In the prior art, the etching uniformity of the wafer is usually improved by adjusting parameters such as temperature and power in the etching equipment, but the effect is limited, and the influence of uneven gas mixing on the etching uniformity cannot be solved.

[0005] In view of this, it is necessary to provide a gas mixing device and a semiconductor device to solve the above problems. Summary of the Utility Model

[0006] The purpose of the utility model is to provide a gas mixing device and a semiconductor device to improve the problem that the existing etching uniformity is affected by uneven gas mixing.

[0007] The utility model provides a gas mixing device, including: a first mixing pipe section, an acceleration pipe section, a second mixing pipe section, a swirl pipe section and a discharge pipe section which are connected in sequence;

[0008] The inner diameter of the first mixing pipe section is larger than that of the discharge pipe section, and the inner diameter of the discharge pipe section is larger than that of the second mixing pipe section;

[0009] The inner diameter of the acceleration pipe section gradually decreases in the direction from the first mixing pipe section to the second mixing pipe section;

[0010] The inner diameter of the swirl pipe section gradually increases in the direction from the second mixing pipe section to the discharge pipe section.

[0011] The beneficial effect of the gas mixing device provided by the utility model lies in that: through pipe sections with different inner diameters: the first mixing pipe section, the acceleration pipe section, the second mixing pipe section, the swirl pipe section and the discharge pipe section, the gas flow velocity and the gas flow direction can be changed to increase the gas mixing effect and improve the uniformity of gas mixing.

[0012] In a possible embodiment, the wall of the acceleration pipe section is inclined, and a first included angle is formed between the wall of the acceleration pipe section and the axial direction of the acceleration pipe section, and the angle of the first included angle is greater than or equal to 30° and less than or equal to 60°; and / or,

[0013] The wall of the swirl pipe section is inclined, and a second included angle is formed between the wall of the swirl pipe section and the axial direction of the swirl pipe section, and the angle of the second included angle is greater than or equal to 60° and less than 90°.

[0014] The beneficial effects are as follows: By reasonably setting the inclination angle of the wall of the acceleration pipe section, the smoothness of gas flow is ensured during gas acceleration, and turbulence is avoided. By reasonably setting the inclination angle of the wall of the swirl pipe section, the smoothness of gas flow is ensured during gas deceleration, and turbulence is avoided.

[0015] In a possible embodiment, the gas mixing device further includes two sets of baffle plates, the two sets of baffle plates are respectively arranged on the opposite inner side walls of the second mixing pipe section, each set of baffle plates is distributed at intervals along the axial direction of the second mixing pipe section, and two adjacent baffle plates in the two sets of baffle plates are arranged staggeredly, and a meandering air flow channel is formed by separating the two sets of baffle plates in the second mixing pipe section.

[0016] The beneficial effects are as follows: By arranging baffle plates in the second mixing pipe section, the gas changes its flow direction under the blocking action of the baffle plates, enhancing the gas mixing effect. The meandering air flow channel prolongs the gas flow path and further enhances the gas mixing effect.

[0017] In a possible embodiment, the height of the baffle plate in the radial direction of the second mixing pipe section is less than half of the inner diameter of the second mixing pipe section; or,

[0018] The height of the baffle plate in the radial direction of the second mixing pipe section is greater than half of the inner diameter of the second mixing pipe section and less than two-thirds of the inner diameter of the second mixing pipe section.

[0019] The beneficial effects are as follows: By reasonably setting the height of the baffle plate, the gas flow is guided to enhance the gas mixing effect.

[0020] In a possible embodiment, the thickness of the baffle plate gradually decreases from the inner side wall of the second mixing pipe section to the center of the second mixing pipe section.

[0021] The beneficial effects are as follows: By designing a baffle plate with a decreasing thickness, the resistance of gas flow is reduced.

[0022] In a possible embodiment, the baffle includes a pair of inclined surfaces disposed opposite to each other, a first end surface and a second end surface connected between the pair of inclined surfaces, and the first end surface is disposed on the inner side wall of the second mixing pipe section;

[0023] A third included angle is formed between the inclined surface and the axial direction of the second mixing pipe section, and the angle of the third included angle is greater than or equal to 60° and less than 90°.

[0024] The beneficial effect is that when the gas flows to the baffle, under the guiding action of the inclined surface, it can flow more smoothly along a circuitous path in the gas flow channel, promoting the mixing effect of the gas.

[0025] In a possible embodiment, the material of the baffle is a corrosion-resistant material.

[0026] The beneficial effect is that some gases used in semiconductor processes are corrosive. By using a corrosion-resistant baffle, the baffle can be prevented from being corroded and damaged by the gas, and the service life of the baffle can be extended.

[0027] In a possible embodiment, the gas mixing device further includes N side pipes provided on the first mixing pipe section, and the side pipes are arranged near one end of the first mixing pipe section away from the acceleration pipe section, and N is a positive integer.

[0028] The beneficial effect is that different types of multiple gases are respectively introduced into the first mixing pipe and the N side pipes, and the multiple gases are preliminarily mixed in the first mixing pipe.

[0029] In a possible embodiment, the first mixing pipe section, the acceleration pipe section, the second mixing pipe section, the swirl pipe section and the discharge pipe section are coaxially arranged.

[0030] The present utility model further provides a semiconductor device, including: the gas mixing device in any of the above embodiments. Description of the Drawings

[0031] Figure 1 It is a schematic diagram of the gas mixing device of the present utility model in the first embodiment.

[0032] Figure 2 It is a schematic diagram of the gas mixing device of the present utility model in the second embodiment.

[0033] Figure 3 It is a partial enlarged schematic diagram of the baffle area in the gas mixing device of the present utility model.

[0034] Figure 4 It is Figure 1 A sectional view taken along the A-A direction in

[0035] Explanation of the accompanying drawings: 110, first mixing tube section; 120, acceleration tube section; 130, second mixing tube section; 140, swirl tube section; 150, discharge tube section; 160, side tube; 170, baffle; 171, inclined surface; 172, second end surface; 173, first end surface; 180, air flow channel. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solution and advantages of the embodiments of the utility model clearer, the technical solution in the embodiments of the utility model will be described clearly and completely below. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0037] In view of the problems existing in the prior art, the embodiments of the present invention provide a gas mixing device, which is applied to semiconductor equipment such as an inductively coupled plasma (ICP) machine, a capacitively coupled plasma (CCP) machine, and an electron cyclotron resonance (ECR) machine, see Figure 1 and Figure 2 The gas mixing device comprises: a first mixing pipe section 110, an accelerating pipe section 120, a second mixing pipe section 130, a swirl pipe section 140 and a discharge pipe section 150 connected in sequence, the inner diameter of the first mixing pipe section 110 is larger than the inner diameter of the discharge pipe section 150, and the inner diameter of the discharge pipe section 150 is larger than the inner diameter of the second mixing pipe section 130. The inner diameter of the accelerating pipe section 120 gradually decreases from the first mixing pipe section 110 to the second mixing pipe section 130. The inner diameter of the swirl pipe section 140 gradually increases from the second mixing pipe section 130 to the discharge pipe section 150.

[0038] The first mixing pipe section 110 serves as a preliminary mixing zone for the gas. Its larger inner diameter allows the gas to be initially mixed at a low speed, thereby reducing direct impact and turbulence caused by flow velocity differences, and laying a foundation for the subsequent mixing process.

[0039] The design of the accelerating pipe section 120 with a gradually decreasing inner diameter causes the gas flow velocity to gradually increase during the flow process. According to Bernoulli's principle, an increase in flow velocity is accompanied by a decrease in pressure. This change in pressure gradient helps to promote the diffusion and mixing of gas molecules. First, diffusion is the result of the random thermal motion of gas molecules, and the existence of the pressure gradient accelerates the thermal motion speed of gas molecules, increasing the collision frequency between gas molecules, thereby promoting the diffusion of gas molecules. Second, in the accelerating pipe section 120, due to the increase in gas flow velocity and the decrease in pressure, the relative motion speed between different gas molecules also increases, making it easier for them to come into contact and mix with each other.

[0040] After the gas is accelerated through the accelerating pipe section 120, it will enter the second mixing pipe section 130 with a relatively small inner diameter. Due to the small inner diameter of the second mixing pipe section 130, the accelerated gas can flow at a relatively high rate in the second mixing pipe section 130, achieving full and uniform diffusion and mixing between different gas molecules.

[0041] The design of the cyclone pipe section 140 with a gradually increasing inner diameter causes the gas flow velocity to gradually decrease during the flow process. According to Bernoulli's principle, a decrease in flow velocity is accompanied by an increase in pressure. This change in pressure gradient helps to promote the diffusion and mixing of gas molecules. In addition, when the gas enters the cyclone pipe section 140 and flows along the direction of the increasing inner diameter of the cyclone pipe section 140, it will also have a certain centrifugal tendency due to the change in the inner diameter of the cyclone pipe section 140. The centrifugal tendency causes a change in the flow velocity distribution of the fluid within the cyclone pipe section 140. The gas flow velocity in the middle of the cyclone pipe section 140 is relatively high, while the gas flow velocity at the edge of the cyclone pipe section 140 is relatively low. This flow velocity distribution helps to form a rotational gas flow, and the rotational flow can significantly increase the relative motion path between gas molecules, thereby enhancing the gas mixing effect.

[0042] After being fully mixed in the cyclone pipe section 140, the gas enters the discharge pipe section 150 with a moderate inner diameter. At this time, the gas has reached a fully and uniformly mixed state. For the wafer etching process, multiple different gases are more uniformly and fully mixed by the gas mixing device in this embodiment and then enter the etching chamber, thereby improving the uniformity of the etching rate of the plasma on the upper part of the wafer and further enhancing the yield of the wafer.

[0043] In one embodiment, referring to Figure 1 and Figure 2 , the wall of the accelerating pipe section 120 is inclined, and a first included angle α is formed between the wall of the accelerating pipe section 120 and the axial direction of the accelerating pipe section 120. The angle of the first included angle α is greater than or equal to 30° and less than or equal to 60°.

[0044] In this embodiment, if the angle of the first included angle α is too small, it means that the degree of contraction of the acceleration pipe section 120 is too small, resulting in the gas not achieving the expected acceleration effect. If the gas acceleration effect is insufficient, the relative movement speed between gas molecules will decrease, thereby affecting the diffusion and mixing effects between different gas molecules and making it impossible to achieve sufficient and uniform mixing of the gas. If the angle of the first included angle α is too large, it means that the degree of contraction of the acceleration pipe section 120 is too large, resulting in a sharp change in the gas flow velocity and easily generating phenomena such as eddy currents and turbulence, which affect the smoothness of gas flow. According to the process requirements, the angle range of the first included angle α is reasonably set to ensure that both the expected acceleration effect of the gas can be satisfied to promote sufficient and uniform mixing of the gas and the stability of gas flow is not affected.

[0045] In another embodiment, referring to Figure 1 and Figure 2 , the wall of the swirl pipe section 140 is inclined, and a second included angle β is formed between the wall of the swirl pipe section 140 and the axial direction of the swirl pipe section 140, and the angle of the second included angle β is greater than or equal to 60° and less than 90°.

[0046] In this embodiment, if the angle of the second included angle β is too small, it means that the degree of expansion of the swirl pipe section 140 is too small, resulting in an unclear change in the pressure gradient in the swirl pipe section 140 and affecting the diffusion and mixing effects between gas molecules. If the angle of the second included angle β is too large, it means that the degree of expansion of the swirl pipe section 140 is too large, resulting in a sharp change in the gas flow velocity and easily generating phenomena such as eddy currents and turbulence, which affect the smoothness of gas flow. According to the process requirements, the angle range of the second included angle β is reasonably set to ensure that both the uniform diffusion and mixing effects between gas molecules can be satisfied and the stability of gas flow is not affected.

[0047] In a preferred embodiment, referring to Figure 1 and Figure 2 , the gas mixing device further includes two sets of baffle plates 170, which are respectively arranged on the opposite inner side walls of the second mixing pipe section 130. Each set of baffle plates 170 is distributed at intervals along the axial direction of the second mixing pipe section 130, and two adjacent baffle plates 170 in the two sets of baffle plates 170 are arranged staggeredly, and a meandering air flow channel 180 is formed by separating through the two sets of baffle plates 170 in the second mixing pipe section 130.

[0048] In this embodiment, the meandering air flow channel 180 forces the gas to change direction and speed multiple times when passing through the second mixing pipe section 130. This complex flow path allows more opportunities for different gas molecules to contact and collide, thereby improving the uniformity and efficiency of gas mixing.

[0049] In the first embodiment, referring to Figure 1 andFigure 3 The height d of the baffle 170 in the radial direction of the second mixing pipe section 130 is less than half of the inner diameter of the second mixing pipe section 130. The obstruction of the baffle 170 to the gas flow is relatively small. Due to the small flow resistance of the gas, the speed change of the gas during the mixing process is relatively gentle, which helps to achieve a more uniform mixing effect. The gas maintains a certain flow rate when passing through the baffle 170, and at the same time can guide the gas to change direction, forming a circuitous gas flow channel 180. This circuitous path helps to increase the contact opportunities between gas molecules, promote gas mixing, and at the same time will not cause a sharp increase in the flow resistance due to excessive obstruction, avoiding the generation of vortex and turbulence phenomena.

[0050] In the second embodiment, referring to Figure 2 and Figure 3 the height d of the baffle 170 in the radial direction of the second mixing pipe section 130 is greater than half of the inner diameter of the second mixing pipe section 130 and less than two-thirds of the inner diameter of the second mixing pipe section 130, that is, the two sets of baffles 170 partially overlap in the radial direction of the second mixing pipe section 130. When the gas flows to one baffle 170 of a set, it will flow along this baffle 170 to between the two baffles 170 of the other set adjacent to this baffle 170, ensuring that the gas can flow back and forth between the two sets of baffles 170, avoiding the situation where some gas molecules flow backward without passing between the two baffles 170 of the other set. In other words, some gas molecules may not flow along the preset circuitous path, which will affect the collision effect between gas molecules and thus the mixing effect between different gas molecules.

[0051] In one embodiment, referring to Figure 1 and Figure 2 the thickness of the baffle 170 gradually decreases from the inner side wall of the second mixing pipe section 130 to the center of the second mixing pipe section 130. As the thickness of the baffle 170 gradually decreases, the flow cross-section of the gas passing through the area near the baffle 170 is also gradually increasing, and the gas has more space to disperse and flow, promoting full and uniform mixing between different gases.

[0052] In a preferred embodiment, referring to Figure 1 , Figure 3 and Figure 4 the baffle 170 includes a pair of inclined surfaces 171 arranged oppositely, a first end surface 173 and a second end surface 172 connected between the pair of inclined surfaces 171, and the first end surface 173 is arranged on the inner side wall of the second mixing pipe section 130. A third included angle γ is formed between the inclined surface 171 and the axial direction of the second mixing pipe section 130, and the angle of the third included angle γ is greater than or equal to 60° and less than 90°.

[0053] In this embodiment, the cross-section of the baffle 170 in the axial direction is trapezoidal. The baffle 170 includes a pair of inclined surfaces 171 arranged oppositely. When the gas flows onto a group of baffles 170, under the guiding action of the inclined surfaces 171 of this group of baffles 170, the gas will smoothly flow along the inclined surfaces 171 to between two baffles 170 of another group adjacent to this baffle 170, thus greatly reducing the resistance of the gas flowing between the baffles 170. In addition, by reasonably setting the angle range of the third included angle γ, the gas flow becomes smoother, reducing the occurrence of vortex and turbulence phenomena.

[0054] Furthermore, referring to Figure 1 and Figure 3 , the second end face 172 is planar, convex arc-shaped or other shapes with a guiding function, which are not specifically limited here. First, the planar second end face 172 can provide a relatively stable guiding surface, enabling the gas to maintain a relatively smooth flow state when flowing through this area, which helps to reduce the generation of vortex and turbulence phenomena. Second, the convex arc-shaped second end face 172 can more effectively guide the gas flow, causing the gas to gradually change direction along the arc surface when flowing through the end of the baffle 170, reducing sharp turning and avoiding the generation of vortex and turbulence phenomena. The arc shape may increase the contact opportunities between gas molecules, contributing to the mixing of different gas molecules.

[0055] Furthermore, referring to Figure 4 , the baffle 170 is bow-shaped, and the first end face 173 is arc-shaped and adapted to the inner side wall of the second mixing pipe section 130.

[0056] In one embodiment, referring to Figure 1 and Figure 3 , the calculation formula for the number of baffles 170 is as follows: n = L / (a + b), where n is the number of baffles 170, L is the length of the second mixing pipe section 130, a is the spacing between two adjacent baffles 170 in each group, and b is the length of the first end face 173 in the axial direction of the second mixing pipe section 130.

[0057] In some specific embodiments, the material of the baffle 170 is a corrosion-resistant material. For example, the corrosion-resistant material can be ceramics, quartz, etc. Some gases used in semiconductor processes are corrosive. When the gas flows in the second mixing pipe section 130, it will cause certain erosion and corrosion to the baffle 170. Corrosion-resistant materials are usually relatively stable in chemical properties and are not easily chemically reactive with other substances, and can maintain good shape and performance under long-term gas flow erosion, extending the service life of the baffle 170.

[0058] In one specific embodiment, referring to Figure 1 andFigure 2 The gas mixing device further includes N side tubes 160 provided on the first mixing pipe section 110. The side tubes 160 are arranged near one end of the first mixing pipe section 110 away from the acceleration pipe section 120, and N is a positive integer. The gas flow rate in the first mixing pipe section 110 is greater than the gas flow rate in the side tubes 160. As Figure 1 shown, gas Gas1 is introduced into one end of the first mixing pipe section 110 away from the acceleration pipe section 120, and gas Gas2 and gas Gas3 are respectively introduced into the side tubes 160 on both sides of the first mixing pipe section 110. Since the side tubes 160 are arranged near one end of the first mixing pipe section 110 away from the acceleration pipe section 120, gas Gas1, gas Gas2, and gas Gas3 will flow a certain distance in the first mixing pipe section 110, realizing the diffusion and mixing between different gases.

[0059] Furthermore, referring to Figure 1 and Figure 2 , the inner diameter of the side tube 160 is smaller than the inner diameter of the second mixing pipe section 130. The smaller inner diameter of the side tube 160 helps to avoid the vortex and turbulence phenomena generated when the gas flows from the side tube 160 into the second mixing pipe section 130, enabling the gas in the side tube 160 to be more smoothly mixed into the gas in the second mixing pipe section 130.

[0060] Even further, referring to Figure 1 and Figure 2 , the side tube 160 is perpendicular to the first mixing pipe section 110. As Figure 1 shown, the gas Gas1 directly introduced into the first mixing pipe section 110 flows along the radial direction of the first mixing pipe section 110. The gas Gas2 is ejected into the first mixing pipe section 110 from the side tube 160 in a direction perpendicular to the gas flow direction of the gas Gas1. At the same time, under the pushing action of the gas Gas1, the gas Gas2 flows obliquely and mixes with the gas Gas1. The gas flow interaction force between the gas Gas1 and the gas Gas2 can promote the full and uniform mixing of the gas Gas1 and the gas Gas2.

[0061] In a preferred embodiment, referring to Figure 1 and Figure 2 , the first mixing pipe section 110, the acceleration pipe section 120, the second mixing pipe section 130, the swirl pipe section 140, and the discharge pipe section 150 are coaxially arranged. By arranging the four pipe sections coaxially, the structural layout is optimized, thereby enhancing the stability of gas flow and improving the gas mixing effect.

[0062] The present utility model further provides a semiconductor device, including: the gas mixing device in any of the above embodiments.

[0063] The technical effects of the gas mixing device of the present utility model will be explained in detail below.

[0064] 1. By reasonably designing the inner diameters of the four pipe sections, namely the first mixing pipe section 110, the acceleration pipe section 120, the second mixing pipe section 130, the swirl pipe section 140 and the discharge pipe section 150, the flow rate and flow direction of the gas are effectively adjusted, promoting the full and uniform mixing of the gas. The uniformly mixed gas then enters the etching chamber, thereby improving the uniformity of the etching rate of the plasma on the upper part of the wafer and further enhancing the yield of the wafer.

[0065] 2. The inner diameter of the acceleration pipe section 120 gradually decreases, accelerating the gas and improving the mixing efficiency; the inner diameter of the swirl pipe section 140 gradually increases, decelerating the gas and generating swirl, which helps the further mixing and uniform distribution of the gas. By reasonably setting the inclination angle α of the wall of the acceleration pipe section 120 and the inclination angle β of the wall of the swirl pipe section 140, the smoothness of the gas flow is ensured, and the phenomena of turbulence and eddy current are avoided, thus enhancing the effect of uniform gas mixing.

[0066] 3. A baffle 170 is arranged in the second mixing pipe section 130. Through the blocking and guiding effects of the baffle 170, a tortuous gas flow channel 180 is formed in the pipe, extending the gas flow path, increasing the contact opportunity and mixing time between the gases, and thus significantly improving the mixing effect. At the same time, the height and thickness of the baffle 170 are also optimized to reduce the flow resistance while ensuring the mixing effect.

[0067] 4. By reasonably setting the inclination angle γ of the inclined surface 171 on the baffle 170, the smooth flow of the gas on the baffle 170 is promoted, ensuring the full diffusion and mixing of the gas between the baffles 170.

[0068] 5. Considering that the gas used in semiconductor processes may be corrosive, the baffle 170 is made of anti-corrosive materials, effectively extending the service life of the equipment and reducing the maintenance cost.

[0069] 6. The first mixing pipe section 110, the acceleration pipe section 120, the second mixing pipe section 130, the swirl pipe section 140 and the discharge pipe section 150 are coaxially arranged, which not only makes the whole device structure compact and occupies less space, but also ensures the continuity and stability of the gas flow.

[0070] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present invention described in the claims. Moreover, the present invention described herein may have other embodiments and can be implemented or realized in various ways. Unless otherwise defined, the technical terms or scientific terms used herein should have the ordinary meaning understood by those of ordinary skill in the art to which the present invention pertains. The words such as "including" used herein mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

Claims

1. A gas mixing device, characterized in that, Comprising: A first mixing pipe section, an acceleration pipe section, a second mixing pipe section, a swirl pipe section, and a discharge pipe section connected in sequence; The inner diameter of the first mixing pipe section is greater than the inner diameter of the discharge pipe section, and the inner diameter of the discharge pipe section is greater than the inner diameter of the second mixing pipe section; The inner diameter of the acceleration pipe section gradually decreases in the direction from the first mixing pipe section to the second mixing pipe section; The inner diameter of the swirl pipe section gradually increases in the direction from the second mixing pipe section to the discharge pipe section.

2. The gas mixing device according to claim 1, wherein The pipe wall of the acceleration pipe section is inclined, and a first included angle is formed between the pipe wall of the acceleration pipe section and the axial direction of the acceleration pipe section, and the angle of the first included angle is greater than or equal to 30° and less than or equal to 60°; and / or, The pipe wall of the swirl pipe section is inclined, and a second included angle is formed between the pipe wall of the swirl pipe section and the axial direction of the swirl pipe section, and the angle of the second included angle is greater than or equal to 60° and less than 90°.

3. The gas mixing device according to claim 1, wherein, It further includes two sets of baffle plates, the two sets of baffle plates are respectively arranged on the opposite inner side walls of the second mixing pipe section, each set of baffle plates is distributed at intervals along the axial direction of the second mixing pipe section, and the adjacent two baffle plates in the two sets of baffle plates are arranged staggeredly, and a meandering air flow channel is formed by separating through the two sets of baffle plates in the second mixing pipe section.

4. The gas mixing device according to claim 3, characterized in that, The height of the baffle plate in the radial direction of the second mixing pipe section is less than half of the inner diameter of the second mixing pipe section; or, The height of the baffle plate in the radial direction of the second mixing pipe section is greater than half of the inner diameter of the second mixing pipe section and less than two-thirds of the inner diameter of the second mixing pipe section.

5. The gas mixing device according to claim 3, wherein The thickness of the baffle plate gradually decreases in the direction from the inner side wall of the second mixing pipe section to the center of the second mixing pipe section.

6. The gas mixing device according to claim 5, wherein The baffle plate includes a pair of inclined surfaces arranged oppositely, a first end surface and a second end surface connected between the pair of inclined surfaces, and the first end surface is arranged on the inner side wall of the second mixing pipe section; A third included angle is formed between the inclined surface and the axial direction of the second mixing pipe section, and the angle of the third included angle is greater than or equal to 60° and less than 90°.

7. The gas mixing device according to any one of claims 3-6, characterized in that, The material of the baffle plate is an anti-corrosive material.

8. The gas mixing device according to any one of claims 1-6, characterized in that, It further includes N side pipes arranged on the first mixing pipe section, the side pipes are arranged close to one end of the first mixing pipe section far from the acceleration pipe section, and N is a positive integer.

9. The gas mixing device according to any one of claims 1-6, characterized in that The first mixing pipe section, the acceleration pipe section, the second mixing pipe section, the swirl pipe section, and the discharge pipe section are coaxially arranged.

10. A semiconductor device, characterized in that, Comprising: The gas mixing device according to any one of claims 1-9.

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