Heating device of supply pipeline and semiconductor equipment

Abstract

The utility model discloses a heating device of a supply pipeline and semiconductor equipment. The heating device comprises a gas distribution device, a gas collecting pipe, a first pipeline and a heating piece, one end of the first pipeline is connected to the gas distribution device, the other end of the first pipeline is connected to the gas collecting pipe, and the first pipeline is used for transferring gas at the gas distribution device into the gas collecting pipe; the heating piece is arranged outside the first pipeline so as to heat the first pipeline. According to the invention, the temperature of the precursor can be controlled, and the gas temperature can adapt to different processing technologies, so that the optimal technology profile can be obtained.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and particularly to a heating device for a supply pipeline and a semiconductor equipment. Background Art

[0002] During the wafer processing, especially during the chemical vapor deposition or plasma enhanced chemical vapor deposition of the wafer, it is necessary to spray a precursor into the process chamber to participate in the wafer processing.

[0003] In the prior art, the precursors share the same pipeline, pass through the gas collector, gas box, barrier layer, manifold, and finally enter the process chamber for processing to participate in the wafer processing process; among them, the gas temperature is only used as a debugging parameter and cannot adapt different temperatures according to different recipes of the machine tool, that is, the best process profile cannot be obtained under different processes.

[0004] Therefore, it is necessary to provide a new heating device for a supply pipeline and a semiconductor equipment to solve the above problems existing in the prior art. Summary of the Invention

[0005] The purpose of the present invention is to provide a heating device for a supply pipeline and a semiconductor equipment to control the temperature of the precursor, so that the gas temperature can adapt to different processing technologies, thereby obtaining the best process profile.

[0006] To achieve the above purpose, the technical solution of the present invention is as follows:

[0007] A heating device for a supply pipeline, the supply pipeline is used to transport reactants to a wafer processing chamber, and the heating device includes a gas distribution device, a gas collector, a first pipeline, and a heating element;

[0008] One end of the first pipeline is connected to the gas distribution device, and the other end is connected to the gas collector for transferring the gas at the gas distribution device into the gas collector;

[0009] The heating element is arranged outside the first pipeline to heat the first pipeline.

[0010] By adopting the above technical solution, during the wafer processing, a heating element is arranged on the first pipeline, which is convenient for adjusting the gas temperature, so that the gas temperature can adapt to different processing technologies, thereby obtaining the best process profile for different layers, facilitating the wafer processing process, and improving the problem in the prior art that adjusting process control means such as start time, process pressure, changing high-frequency / low-frequency power, and replacing the barrier layer will change the average value of the film thickness and affect the film quality.

[0011] Optionally, the heating element is annular, the first pipe passes through the heating element, and the inner wall of the heating element fits against the outer wall of the first pipe;

[0012] In the working state, the heating element heats the first pipe to keep the temperature of the gas in the first pipe between 30°C and 45°C.

[0013] By adopting the above technical solution, the heating element is annular, which can conduct heat to the side wall of the first pipe more evenly, so that the temperature of the gas in the first pipe is kept between 30°C and 45°C. By controlling the gas temperature, the reaction rate can be controlled more precisely, thereby affecting the uniformity of the film thickness. A lower temperature may cause the reaction rate to slow down, which helps to reduce the non-uniformity of the film thickness. If the gas temperature is too high, it may cause TEOS or other precursors to react prematurely before reaching the process chamber, affecting the quality of the final film. In addition, in the temperature range of 30°C to 45°C, the condensation of moisture in the gas can be reduced, avoiding the adverse effects of moisture on the film growth process, such as forming defects or changing the film structure.

[0014] Optionally, a temperature sensor is fixedly arranged on the first pipe and / or the heating element.

[0015] By adopting the above technical solution, the temperature sensor is used to detect the temperature of the side wall of the first pipe, so that the temperature of the gas in the first pipe is within a suitable temperature range.

[0016] Optionally, a second pipe is further included. One end of the second pipe is connected to the gas distribution device, and the other end is connected to the gas collecting pipe;

[0017] In the working state, gases are respectively introduced into the first pipe and the second pipe to prevent the gases in the first pipe and the second pipe from reacting prematurely.

[0018] By adopting the above technical solution, when the precursors will react prematurely when they meet, the precursors that will react are respectively introduced into the first pipe and the second pipe, so that the precursors will not meet prematurely and react.

[0019] Optionally, a flow control device is arranged on the gas distribution device, and the flow control device is connected to the first pipe. The flow control device is used to control the gas flow rate in the first pipe so that the gas flow rate range in the first pipe is 200~500 sccm.

[0020] By adopting the above technical solution, the flow control device is used to control the gas flow rate in the first pipeline, so that the gas flow rate range in the first pipeline is 200 - 500 sccm. This flow rate range helps to maintain the stability of gas flow, which can reduce the non-uniformity during the film growth process and improve the overall quality of the film.

[0021] A semiconductor device includes a gas box, a manifold, a process chamber, and a heating device;

[0022] One side of the gas box is communicated with the gas collecting pipe, and the other side is communicated with the manifold;

[0023] The manifold is communicated with the top of the process chamber;

[0024] In the working state, the gas at the gas distribution device is mixed in the gas collecting pipe and transferred to the gas box, and the gas in the gas box is sprayed to the designated area of the process chamber via the manifold.

[0025] By adopting the above technical solution, the semiconductor device is used to process wafers. During the processing, the gas in the gas collecting pipe is transferred to the gas box and then transferred to the process chamber via the manifold to participate in the wafer processing, which facilitates the wafer processing process.

[0026] Optionally, it further includes a partition part. Both ends of the partition part are respectively communicated with the gas box and the manifold, and a plurality of partition holes are opened on the partition part to make the gas evenly distributed.

[0027] By adopting the above technical solution, a plurality of partition holes are opened on the partition part, and the gas in the gas box evenly enters into different partition holes and then evenly enters into the manifold through the partition holes, which can be more evenly sprayed during the wafer processing process and facilitates the wafer processing process.

[0028] Optionally, a first positioning pin is fixedly arranged at one end of the partition part, and a first positioning hole is opened on the side wall of the gas box. The first positioning pin passes through the first positioning hole to connect the partition part with the gas box.

[0029] By adopting the above technical solution, the first positioning pin is inserted into the first positioning hole to connect the partition part with the gas box, which facilitates the gas in the gas box to enter into the partition part.

[0030] Optionally, a second positioning pin is fixedly arranged at the other end of the partition part, and a second positioning hole is opened on the side wall of the manifold. The second positioning pin passes through the second positioning hole to connect the partition part with the manifold.

[0031] By adopting the above technical solution, the second positioning pin is inserted into the second positioning hole to connect the partition part and the manifold, facilitating the gas in the partition part to enter the manifold.

[0032] Optionally, the manifold is fixedly arranged at the top of the process chamber, and the nozzles of the manifold extend into the process chamber.

[0033] By adopting the above technical solution, the manifold is fixedly arranged at the top of the process chamber, and the nozzles of the manifold extend into the process chamber, facilitating the ejection of gas to participate in the wafer processing process.

[0034] The beneficial effects of the heating device for the supply pipeline and the semiconductor equipment provided by the present invention at least include:

[0035] 1. A heating element is arranged on the first pipeline, facilitating the adjustment of the gas temperature, enabling the gas temperature to adapt to different processing technologies, thereby obtaining the best process profile for different layers, facilitating the wafer processing process, and improving the problem that in the prior art, process control means such as adjusting the starting time, process pressure, changing high-frequency / low-frequency power, and replacing the barrier layer will change the average value of the film thickness and affect the film quality;

[0036] 2. A first pipeline and a second pipeline are arranged between the gas distribution device and the gas collecting pipe. Both the first pipeline and the second pipeline are common pipelines. When the precursors will react in advance when they meet, the precursors are respectively introduced into the first pipeline and the second pipeline, which can ensure that the precursors will not meet in advance and react. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 is a schematic diagram of the main structure of an embodiment of the present invention;

[0038] Figure 2 is an exploded view of the positions of the gas tank, the partition part and the manifold in an embodiment of the present invention;

[0039] Figure 3 is Figure 2 an enlarged view of part A in

[0040] Figure 4 is a schematic diagram of the positions of the first positioning pin and the first positioning hole in an embodiment of the present invention.

[0041] Reference numerals:

[0042] 100, gas distribution device; 110, flow control device; 200, gas collecting pipe; 300, first pipeline; 310, heating element; 320, temperature sensor; 400, second pipeline; 500, gas tank; 510, first positioning hole; 600, manifold; 610, second positioning hole; 700, process chamber; 800, partition part; 810, first positioning pin; 820, second positioning pin; 830, partition hole; 900, cleaning channel. Detailed implementation manners

[0043] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Apparently, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings as understood by those of ordinary skill in the art to which the present invention pertains. The words such as "including" used herein mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items.

[0044] The following further describes in detail the specific implementation manners of the present invention with reference to the accompanying drawings.

[0045] Refer to Figures 1-4, embodiments of the present invention provide a heating device for a supply pipe. The supply pipe is used to transport reactants to a wafer processing chamber. The heating device for the supply pipe of a semiconductor device includes a gas distribution device 100, a gas collecting pipe 200, a first pipe 300, and a heating element 310. The gas distribution device 100 is used to distribute gas, enable the gas to enter different pipes, and control the gas flow rate. The first pipe 300 is disposed between the gas distribution device 100 and the gas collecting pipe 200. There is a pipe at the gas distribution device 100, and the gas flow rate inside the pipe can be controlled on the gas distribution device 100, such as the gas flow in the pipe. The gas collecting pipe 200 is used to collect gas. A variety of gases provided at the gas distribution device 100 are uniformly mixed inside the gas collecting pipe 200 and transferred to the next process node through the gas collecting pipe 200. One end of the first pipe 300 is connected to the gas distribution device 100, and the other end is connected to the gas collecting pipe 200. The connection method at both ends can be welding or threaded connection. In this embodiment, it is preferred that both ends of the first pipe 300 are respectively connected to the gas distribution device 100 and the gas collecting pipe 200 through threaded connection, and there is no gas leakage at the connection. In addition, both sides of the first pipe 300 are respectively connected to the pipe at the gas distribution device 100 and the inside of the gas collecting pipe 200. The first pipe 300 is used to transfer the gas at the gas distribution device 100 into the gas collecting pipe 200. A heating element 310 is disposed outside the first pipe 300. The heating element 310 is mainly used to heat the first pipe 300, thereby heating the gas inside the first pipe 300. The setting method of the heating element 310 can be bonding, clamping, or bolt fixing, etc. In this embodiment, it is preferred to adopt the method of fixing the heating element 310 to the outer wall of the first pipe 300 through bolts. During the working process, it is used to heat the gas inside the first pipe 300, and the process parameters of the TEOS silicon oxide film are adjusted by changing the temperature of the gas. Specifically, the gas temperature can be adjusted according to different recipes of the machine to obtain the best process profile for different layers. In addition, adjusting the temperature basically does not change the average value of the film thickness and basically does not affect the quality of the film.

[0046] Refer to Figures 1-4, the heating element 310 is annular. When the heating element 310 is fixed, the first pipe 300 is arranged inside the heating element 310, and the inner wall of the heating element 310 is in contact with the outer wall of the first pipe 300, so that the temperature of the heating element 310 can be more evenly conducted to the side wall of the first pipe 300, thereby heating the gas in the first pipe 300. During the heating process, the heating element 310 is heated by a resistance wire or other external heating device, thereby heating the side wall of the first pipe 300. During the working process, the temperature of the gas in the first pipe 300 is maintained between 30°C and 45°C. By controlling the gas temperature, the reaction rate can be more precisely controlled, thereby affecting the uniformity of the film thickness. A lower temperature may cause the reaction rate to slow down, which helps to reduce the non-uniformity of the film thickness. If the gas temperature is too high, it may cause the precursor to react in advance before reaching the process chamber, affecting the quality of the final film. In this embodiment, tetraethoxysilane and oxygen are selected as the precursors. In addition, in the temperature range of 30°C to 45°C, the condensation of moisture in the gas can be reduced, avoiding the adverse effects of moisture on the film growth process, such as forming defects or changing the film structure; a temperature sensor 320 is also arranged in the heating device, and the temperature sensor 320 is used to detect the temperature of the first pipe 300 to adjust the temperature of the first pipe 300 to a suitable temperature in real time; wherein, the temperature sensor 320 can be fixed on the side wall of the first pipe 300, or fixed on the heating element 310, or both on the side wall of the first pipe 300 and the heating element 310. In this embodiment, it is preferred that the temperature sensor 320 is fixedly arranged on the side wall of the first pipe 300, and the heating element 310 is sleeved on the outer wall of the first pipe 300 and also sleeved on the heating element 310. The fixing method of the temperature sensor 320 can be selected as clamping, bonding or bolt fixing, etc. In this embodiment, it is preferred that the temperature sensor 320 is fixed on the side wall of the first pipe 300 by means of bolt fixing, which is convenient for detecting the temperature of the first pipe 300.

[0047] Refer to Figures 1-4, the heating device further includes a second pipe 400. One end of the second pipe 400 is connected to the gas distribution device 100, and the other end is connected to the gas collecting pipe 200. The connection methods at both ends can be welding or threaded connection. In this embodiment, it is preferably that both ends of the second pipe 400 are respectively connected to the gas distribution device 100 and the gas collecting pipe 200 through threaded connections, and there will be no gas leakage at the connection points. In addition, both sides of the second pipe 400 are respectively communicated with the pipe at the gas distribution device 100 and the inside of the gas collecting pipe 200; among them, both the first pipe 300 and the second pipe 400 are common components. During the working process, when the precursors do not react in advance when they meet, it can be selected to be transported from the first pipe 300 or from the second pipe 400. When the precursors will react in advance when they meet, the gases that will react can be respectively introduced into the first pipe 300 and the second pipe 400, so as to reduce the process that the precursors will react in advance when they meet, that is, when the precursors will react in advance when they meet, the first pipe 300 and the second pipe 400 respectively introduce gases to prevent the gases in the first pipe 300 from reacting with the gases in the second pipe 400 in advance.

[0048] Refer to Figures 1-4 , a flow control device 110 is provided on the gas distribution device 100. The flow control device 110 is respectively installed corresponding to the first pipe 300 and the second pipe 400 for controlling the gas flow rates in the first pipe 300 and the second pipe 400. Among them, the flow control device 110 connected to the first pipe 300 is used to control the gas flow rate in the first pipe 300. The flow control device can be a valve or other devices such as a flow meter that can achieve flow control. In this embodiment, the flow control device is selected as a mass flow controller; during the working process, the gas flow rate range in the first pipe 300 is controlled to be 200~500 sccm. A smaller flow rate range helps to maintain the stability of gas flow, which can reduce the non-uniformity during the film growth process and improve the overall quality of the film.

[0049] Embodiments of the present invention provide a semiconductor device, which includes a gas box 500, a manifold 600, a process chamber 700, and the above-mentioned heating device; wherein the process chamber 700 is a wafer processing chamber; one side of the gas box 500 is communicated with a gas collecting pipe 200, and the other side is communicated with the manifold 600. During operation, gas enters the gas box 500 through the gas collecting pipe 200 and then enters the manifold 600 through the gas box 500. The manifold 600 is communicated with the process chamber 700, and the wafer is reacted in the process chamber 700. In the working state, the gas at the gas distribution device 100 is mixed in the gas collecting pipe 200 and transferred to the gas box 500. The gas in the gas box 500 is ejected to a designated area of the process chamber 700 through the manifold 600, thereby completing the processing of the wafer; the semiconductor device further includes a partition portion 800, and both ends of the partition portion 800 are respectively connected to the gas box 500 and the manifold 600. A plurality of partition holes 830 are formed in the partition portion 800, and the partition holes 830 penetrate through the partition portion 800 along the connection direction of the gas box 500 and the manifold 600. During operation, gas enters each partition portion 800 evenly, so that the gas entering the manifold 600 is evenly distributed.

[0050] Refer to Figures 1-4, a first positioning pin 810 is fixedly arranged at one end of the partition part 800. The fixing method can be bonding, welding, integral molding, etc. In this embodiment, it is preferably to fix the first positioning pin 810 at one end of the partition part 800 by integral molding. A first positioning hole 510 is formed in the side wall of the gas tank 500. The number of the first positioning holes 510 is the same as that of the first positioning pins 810. In this embodiment, both the first positioning hole 510 and the first positioning pin 810 are provided in plurality. The plurality of first positioning pins 810 are evenly distributed at one end of the partition part 800, and the plurality of first positioning holes 510 are evenly distributed on one side of the gas tank 500. The first positioning pin 810 is inserted into the first positioning hole 510, thereby connecting the partition part 800 and the gas tank 500, so that the gas in the gas tank 500 can enter the partition part 800; a second positioning pin 820 is fixedly arranged at the other end of the partition part 800. The fixing method can be bonding, welding, integral molding, etc. In this embodiment, it is preferably to fix the second positioning pin 820 at the other end of the partition part 800 by integral molding. At the same time, a second positioning hole 610 is formed in the side wall of the manifold 600. The number of the second positioning holes 610 is the same as that of the second positioning pins 820. In this embodiment, both the second positioning hole 610 and the second positioning pin 820 are provided in plurality. The plurality of second positioning pins 820 are evenly distributed at the other end of the partition part 800, and the plurality of second positioning holes 610 are evenly distributed on the side wall of the manifold 600. The second positioning pin 820 is inserted into the second positioning hole 610, thereby connecting the partition part 800 and the manifold 600, so that the gas in the partition part 800 can enter the manifold 600. At the same time, the manifold 600 is fixedly arranged on the top of the process chamber 700. At the same time, a cleaning channel 900 is formed in the side wall of the manifold 600. The cleaning gas enters the process chamber 700 through the cleaning channel 900, realizing the splitting of the process gas and the cleaning gas by the manifold 600; the fixing method of the manifold 600 can be clamping, bonding or bolt fixing, etc. In this embodiment, it is preferably to fix the manifold 600 on the side wall of the process chamber 700 by bolt fixing, and the nozzles on the manifold 600 extend into the process chamber 700, so that the gas can be sprayed into the process chamber 700 after being ejected from the manifold 600, thereby processing the wafer.

[0051] The implementation principle of the heating device of the supply pipeline and the semiconductor device in the embodiment of the present application is that during the wafer processing, the temperature of the gas in the first pipeline 300 is adjusted, so that the temperature can be at a suitable temperature when the machine implements different process recipes, thereby obtaining the best process profile of different layers. In addition, the reaction of TEOS-based silicon oxide is extremely sensitive to temperature. Compared with process control means such as adjusting the starting time, process pressure, changing the high-frequency / low-frequency power, and replacing the barrier layer, adjusting the temperature basically does not change the average value of the film thickness and basically does not affect the quality of the film, facilitating the wafer processing process.

[0052] Although the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are all within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and can be implemented or realized in various ways.

Claims

1. A heating device for a supply pipe, the supply pipe being used to transport reactants to a wafer processing chamber, characterized in that, The heating device includes a gas distribution device (100), a gas collecting pipe (200), a first pipe (300), and a heating element (310); One end of the first pipe (300) is connected to the gas distribution device (100), and the other end is connected to the gas collecting pipe (200) for transferring the gas at the gas distribution device (100) into the gas collecting pipe (200); The heating element (310) is disposed outside the first pipe (300) to heat the first pipe (300).

2. The heating device according to claim 1, characterized in that, The heating element (310) is annular, the first pipe (300) passes through the heating element (310), and the inner wall of the heating element (310) is in contact with the outer wall of the first pipe (300); In the working state, the heating element (310) heats the first pipe (300) to keep the temperature of the gas in the first pipe (300) between 30°C and 45°C.

3. The heating device according to claim 1, characterized in that, A temperature sensor (320) is fixedly arranged on the first pipe (300) and / or the heating element (310).

4. The heating device according to claim 1, characterized in that, It further includes a second pipe (400), one end of the second pipe (400) is connected to the gas distribution device (100), and the other end is connected to the gas collecting pipe (200); In the working state, gases are respectively introduced into the first pipe (300) and the second pipe (400) to prevent the gas in the first pipe (300) from reacting with the gas in the second pipe (400) prematurely.

5. The heating device according to claim 1, characterized in that, A flow control device (110) is arranged on the gas distribution device (100), and the flow control device (110) is connected to the first pipe (300). The flow control device (110) is used to control the gas flow rate in the first pipe (300) so that the gas flow rate range in the first pipe (300) is 200 - 500 sccm.

6. A semiconductor device, characterized in that, It includes a gas tank (500), a manifold (600), a process chamber (700), and the heating device according to any one of claims 1 - 5; One side of the gas tank (500) is communicated with the gas collecting pipe (200), and the other side is communicated with the manifold (600); The manifold (600) is communicated with the top of the process chamber (700); In the working state, the gas at the gas distribution device (100) is mixed in the gas collecting pipe (200) and transferred to the gas tank (500), and the gas in the gas tank (500) is sprayed to a specified area of the process chamber (700) via the manifold (600).

7. The semiconductor device according to claim 6, wherein, It further includes a partition part (800), both ends of the partition part (800) are respectively communicated with the gas tank (500) and the manifold (600), and a plurality of partition holes (830) are formed on the partition part (800) to make the gas evenly distributed.

8. The semiconductor device according to claim 7, wherein, One end of the partition part (800) is fixedly provided with a first positioning pin (810), a first positioning hole (510) is formed in the side wall of the gas tank (500), and the first positioning pin (810) is inserted into the first positioning hole (510) to connect the partition part (800) with the gas tank (500).

9. The semiconductor device according to claim 8, wherein The other end of the partition part (800) is fixedly provided with a second positioning pin (820), a second positioning hole (610) is formed in the side wall of the manifold (600), and the second positioning pin (820) is inserted into the second positioning hole (610) to connect the partition part (800) with the manifold (600).

10. The semiconductor device according to claim 6, wherein, The manifold (600) is fixedly arranged on the top of the process chamber (700), and the nozzles of the manifold (600) extend into the process chamber (700).

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