Wafer stage device and photoetching machine

Abstract

The utility model belongs to the technical field of semiconductors, and particularly relates to a wafer carrying table device and a photoetching machine. The wafer carrying table device comprises a carrying table body and a vacuum pump, the carrying table body is provided with a wafer groove used for placing a wafer to be processed, the side wall of the wafer groove is provided with a vacuum pipeline, the vacuum pipeline is communicated with the vacuum pump, and the vacuum pump is used for adsorbing film particles formed by stripping of a wafer film. By using the wafer carrying table device in the technical scheme, the film particles on the surface of the wafer to be processed are pumped away by the vacuum pump, so that the film particles are prevented from being accumulated on the edge inclined surface of the wafer to be processed, and the defects of particles, bubbles or water marks and the like generated on the edge inclined surface due to film stripping are effectively avoided.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductors, and particularly relates to a wafer stage device and a lithography machine. Background Art

[0002] Integrated circuit wafer production refers to a series of production processes for manufacturing semiconductor devices on and within the surface of a wafer. Its main processes include wafer processing, oxidation, and lithography, etc. Among them, wafer processing means cutting a single crystal column made of silicon or gallium arsenide into a circular thin slice. The role of the oxidation process is to form a protective film on the surface of the wafer. The film can protect the wafer from chemical impurities, prevent leakage current from entering the circuit, prevent diffusion during ion implantation, and prevent the wafer from slipping during etching. Lithography is to "print" the circuit pattern onto the wafer through light. Lithography can be divided into three steps: coating photoresist, exposure, and development. Photoresist, also known as photoresist, is a light-sensitive material. It will undergo a chemical reaction during the subsequent exposure process, thereby defining the circuit pattern on the chip. Wafer exposure involves using light to project the pattern on the mask onto the photoresist through an optical system, thereby realizing the transfer of the pattern. Development is to apply a developer to the exposed photoresist. The developer is a chemical solvent, and its role is to wash away the exposed or unexposed parts of the photoresist, thereby obtaining the required pattern on the wafer.

[0003] Immersion lithography is one of the commonly used lithography techniques. Immersion lithography is a lithography technique that fills the space between the lower surface of the last lens of the projection objective and the wafer with a certain liquid (the commonly used liquid is water), and increases the numerical aperture of the system by changing the refractive index. It can reduce the feature size of lithography from 193 nanometers to below 45 nanometers, greatly improving its resolution. During the lithography process, film peeling is a common phenomenon. The film may have insufficient adhesion to the substrate due to various reasons (such as material mismatch, stress problems, improper process conditions, etc.), resulting in peeling. Film peeling not only affects the quality and performance of the semiconductor, but may also lead to the failure of the entire manufacturing process. When exposing the edge of the wafer, the peeled film particles may remain on the inclined surface of the wafer edge, resulting in particle defects, and the position where the film particles stay may form bubbles under the action of heat; in addition, since the immersion lithography technique requires injecting water between the lens and the wafer, the peeled film particles will cause water marks on the wafer surface.

[0004] Therefore, it is urgent to propose a wafer stage device and a lithography machine to solve the above problems. Summary of the Utility Model

[0005] The purpose of the utility model is to at least solve the problem of how to reduce the defects on the inclined surface of the wafer edge caused by film peeling. This purpose is achieved through the following technical solutions:

[0006] In the first aspect of the present utility model, a wafer stage device is proposed. The wafer stage device includes a stage body and a vacuum pump. The stage body has a wafer groove for placing a wafer to be processed. The side wall of the wafer groove has a vacuum pipeline, and the vacuum pipeline is communicated with the vacuum pump. The vacuum pump is used for adsorbing film particles formed by peeling of the wafer film.

[0007] In the wafer stage device of this technical solution, by arranging a vacuum pipeline on the side wall of the wafer groove, when performing edge exposure of the wafer, the vacuum pump is turned on, negative pressure is generated in the vacuum pipeline, and the film particles on the surface of the wafer to be processed are sucked away by the vacuum pump, thereby preventing the film particles from accumulating on the inclined surface at the edge of the wafer to be processed, and effectively avoiding defects such as particles, bubbles or water marks generated on the edge inclined surface due to film peeling.

[0008] In addition, according to the wafer stage device of the present utility model, the following additional technical features may also be provided:

[0009] In some embodiments of the present utility model, an annular groove is formed on the groove wall of the wafer groove, and the annular groove forms the vacuum pipeline.

[0010] In some embodiments of the present utility model, an air extraction port is arranged on the side wall of the annular groove, and the vacuum pipeline is communicated with the vacuum pump through the air extraction port.

[0011] In some embodiments of the present utility model, the wafer stage device further includes a connecting pipeline. One end of the connecting pipeline penetrates from the outside of the stage body into the inside of the stage body and is communicated with the air extraction port, and the other end of the connecting pipeline is communicated with the vacuum pump.

[0012] In some embodiments of the present utility model, a valve is arranged on the connecting pipeline, and the valve is configured to be opened when performing edge exposure of the wafer to be processed and closed when performing internal exposure of the wafer to be processed.

[0013] The present utility model also proposes a lithography machine, which includes the wafer stage device in the above embodiments.

[0014] In some embodiments of the present utility model, the lithography machine further includes an exposure device. The exposure device is located above the stage body. The exposure device includes an exposure light source, a mask and an exposure lens arranged in sequence from top to bottom. The exposure lens is used for focusing the exposure light source and projecting the pattern on the mask onto the wafer to be processed.

[0015] In some embodiments of the present utility model, the lithography machine further includes an immersion liquid supply and recovery device, which is located between the exposure lens and the stage body. The immersion liquid supply and recovery device is provided with an immersion liquid supply channel and an immersion liquid recovery channel. The immersion liquid is discharged from the immersion liquid supply channel onto the wafer to be processed and recovered through the immersion liquid recovery channel.

[0016] In some embodiments of the present utility model, the lithography machine further includes an immersion liquid supply system, which is in communication with the immersion liquid supply channel and is used to transport the immersion liquid to the immersion liquid supply channel.

[0017] In some embodiments of the present utility model, the lithography machine further includes an immersion liquid recovery system, which is in communication with the immersion liquid recovery channel and is used to drain the immersion liquid. Description of the Drawings

[0018] By reading the detailed description of the preferred embodiments below, various other advantages and benefits will become clear to those of ordinary skill in the art. The drawings are only for the purpose of showing the preferred embodiments and are not considered to be a limitation of the present utility model. Moreover, throughout the drawings, the same reference numerals are used to represent the same components. In the drawings:

[0019] Figure 1 Schematically shows a partial structural schematic diagram of a wafer to be processed according to an embodiment of the present utility model;

[0020] Figure 2 Schematically shows a structural schematic diagram of the stage body according to an embodiment of the present utility model;

[0021] Figure 3 Schematically shows a structural schematic diagram of the lithography machine according to an embodiment of the present utility model.

[0022] The reference numerals in the drawings are as follows:

[0023] 100, wafer to be processed; 110, edge bevel; 200, stage body; 210, wafer groove; 220, vacuum pipeline; 300, exposure device; 400, immersion liquid supply and recovery device; 500, immersion liquid; 600, immersion liquid supply system; 700, immersion liquid recovery system. Detailed Embodiments

[0024] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure can be more thoroughly understood and the scope of the present disclosure can be fully conveyed to those skilled in the art.

[0025] It should be understood that the terms used herein are for the purpose of describing particular example embodiments only and are not intended to be limiting. Unless the context clearly dictates otherwise, the singular forms "a", "an", and "the" as used herein may also include the plural forms. The terms "comprising", "including", "containing", and "having" are inclusive and thus specify the presence of the stated features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their execution in the particular order described or illustrated, unless the execution order is explicitly stated. It should also be understood that additional or alternative steps may be used.

[0026] Although the terms first, second, third, etc. may be used herein to describe multiple elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer, or section from another. Unless the context clearly indicates otherwise, terms such as "first", "second", and other numerical terms when used herein do not imply an order or sequence. Thus, the first element, component, region, layer, or section discussed below may be referred to as the second element, component, region, layer, or section without departing from the teachings of the example embodiments.

[0027] For ease of description, spatial relative relationship terms may be used herein to describe the relationship of one element or feature shown in the figures to another element or feature, such as "inner", "outer", "inner side", "outer side", "below", "beneath", "above", "upper", etc. Such spatial relative relationship terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is flipped, the element described as "below" or "beneath" another element or feature will then be oriented "above" or "over" the other element or feature. Thus, the example term "below" can include both the above and below orientations.

[0028] Figure 1Schematically shown is a partial structural schematic diagram of a wafer 100 to be processed according to an embodiment of the present utility model. As Figure 1 shown, the edge of the wafer 100 to be processed is beveled, and the peeled thin film particles are likely to form defects such as particles, bubbles or water marks at the edge bevel 110.

[0029] Figure 2 Schematically shown is a structural schematic diagram of a stage body 200 according to an embodiment of the present utility model. Figure 3 Schematically shown is a structural schematic diagram of a lithography machine according to an embodiment of the present utility model. As Figure 2 and Figure 3 shown, the present utility model provides a wafer stage device, the wafer stage device includes a stage body 200 and a vacuum pump. The stage body 200 has a wafer groove 210 for placing the wafer 100 to be processed. The side wall of the wafer groove 210 has a vacuum pipeline 220, and the vacuum pipeline 220 is communicated with the vacuum pump. The vacuum pump is used for adsorbing the thin film particles formed by the peeling of the wafer thin film.

[0030] In the wafer stage device of the present technical solution, by arranging the vacuum pipeline 220 on the side wall of the wafer groove 210, when exposing the edge of the wafer, the vacuum pump is turned on, a negative pressure is generated in the vacuum pipeline 220, and the thin film particles on the surface of the wafer 100 to be processed are sucked away by the vacuum pump, thereby preventing the thin film particles from accumulating on the edge bevel 110 of the wafer 100 to be processed, and further effectively avoiding defects such as particles, bubbles or water marks generated on the edge bevel 110 due to the peeling of the thin film.

[0031] Furthermore, an annular groove is formed in the groove wall of the wafer groove 210, and the annular groove forms the vacuum pipeline 220. By forming the annular groove in the groove wall of the wafer groove 210, it can ensure that the negative pressure is concentrated at the position of the edge of the wafer 100 to be processed, avoiding energy waste. Preferably, when the wafer 100 to be processed is placed in the wafer groove 210, the notch of the annular groove faces the outer circumference of the wafer 100 to be processed, ensuring that the suction force generated by the vacuum pump is concentrated on the outer circumference of the wafer 100 to be processed, so as to ensure that there is sufficient suction force on the outer circumference of the wafer 100 to be processed.

[0032] Furthermore, an air extraction port is arranged on the side wall of the annular groove, and the vacuum pipeline 220 is communicated with the vacuum pump through the air extraction port. Optionally, the number of the air extraction ports can be multiple, and the multiple air extraction ports are arranged at intervals along the side wall of the annular groove. Preferably, the intervals between adjacent air extraction ports are the same, so as to ensure that the suction force on the edge of the wafer 100 to be processed is evenly distributed as much as possible, and avoid the wafer 100 to be processed from moving due to unbalanced suction force.

[0033] Furthermore, the wafer stage device further includes a connecting pipeline. One end of the connecting pipeline penetrates into the interior of the stage body 200 from the outside of the stage body 200 and communicates with the air extraction port, and the other end of the connecting pipeline communicates with a vacuum pump. Optionally, through holes for passing through the connecting pipeline can be provided on the side wall of the stage body 200. Optionally, the connecting pipeline may include a plurality of first pipelines connected in parallel and a second pipeline. One end of each first pipeline communicates with an air extraction port, and the other ends all communicate with the second pipeline, and the second pipeline communicates with the vacuum pump.

[0034] Furthermore, a valve is provided on the connecting pipeline. The valve is configured to be opened during the exposure of the edge of the wafer 100 to be processed and closed during the exposure of the interior of the wafer 100 to be processed. The main purpose of edge exposure of the wafer is to improve the yield of wafer semiconductor devices. By performing special treatment on the edge of the wafer 100 to be processed, the yield loss can be minimized or the edge can be protected from contamination during further processing, ensuring that the circuits on the edge can work properly and reducing the influence of edge effects on the internal circuits at the same time. Internal exposure involves forming the required circuit patterns inside the wafer through processes such as photolithography and etching. By precisely controlling the irradiation of light and the removal of substances, tiny circuits and components are formed on the wafer. Internal exposure is used to ensure that the circuits inside the chip can be correctly connected and functionalized to meet the performance requirements of electronic devices. The methods of edge exposure and internal exposure are mature prior arts in this field and will not be described herein. Since film peeling usually occurs during edge exposure, by setting the valve, the vacuum pipeline 220 can be controlled to provide suction only during edge exposure, thereby saving energy. Exemplarily, the valve can be a solenoid valve.

[0035] Continue to refer to Figure 3 , this embodiment also provides a lithography machine, including the above-mentioned wafer stage device. By using the upper wafer stage device in the lithography process, the wafer 100 to be processed can effectively avoid defects such as particles, bubbles, and water marks caused by film peeling, and greatly improve the product yield.

[0036] Furthermore, the lithography machine further includes an exposure device 300. The exposure device 300 is located above the stage body 200. The exposure device 300 includes an exposure light source, a mask plate, and an exposure lens arranged in sequence from top to bottom. The exposure lens is used to focus the exposure light source and project the pattern on the mask plate onto the wafer 100 to be processed. During the exposure process, through the light beam generated by the exposure light source, the pattern on the mask plate is projected onto the wafer 100 to be processed, causing chemical or physical changes in the exposed part of the photoresist, thereby realizing the transfer of the pattern. The setting of the exposure lens can ensure that the pattern is accurately transferred from the mask plate to the wafer 100 to be processed.

[0037] Further, the lithography machine further includes an immersion liquid supply and recovery device 400. The immersion liquid supply and recovery device 400 is located between the exposure lens and the stage body 200. The immersion liquid supply and recovery device 400 is provided with an immersion liquid supply channel and an immersion liquid recovery channel. The immersion liquid 500 is discharged from the immersion liquid supply channel onto the wafer 100 to be processed and is recovered through the immersion liquid recovery channel. The immersion liquid 500 is a liquid used to fill the gap between the exposure lens and the wafer 100 to be processed. Its high reflectivity property can increase the numerical aperture of the imaging system of the lithography machine to achieve the purpose of improving the imaging quality. Since during the edge exposure process, the peeled film particles are sucked away by the vacuum pump, it is possible to effectively avoid the contamination of the surface of the exposure lens near the wafer 100 to be processed by the film particles.

[0038] Further, the lithography machine further includes an immersion liquid supply system 600. The immersion liquid supply system 600 is communicated with the immersion liquid supply channel and is used to transport the immersion liquid 500 to the immersion liquid supply channel. The immersion liquid supply system 600 can provide power for the immersion liquid 500 to transport the immersion liquid 500 to the surface of the wafer 100 to be processed. Further, the lithography machine further includes an immersion liquid recovery system 700. The immersion liquid recovery system 700 is communicated with the immersion liquid recovery channel and is used to drain the immersion liquid 500.

[0039] The above are only the preferred specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A wafer stage device, characterized in that, The wafer stage device includes a stage body (200) and a vacuum pump. The stage body (200) has a wafer groove (210) for placing a wafer to be processed (100). The side wall of the wafer groove (210) has a vacuum pipeline (220), and the vacuum pipeline (220) is communicated with the vacuum pump. The vacuum pump is used for adsorbing film particles formed by the peeling of the wafer film.

2. The wafer stage apparatus according to claim 1, wherein A ring groove is formed in the groove wall of the wafer groove (210), and the ring groove forms the vacuum pipeline (220).

3. The wafer stage device according to claim 2, wherein An air extraction port is arranged on the side wall of the ring groove, and the vacuum pipeline (220) is communicated with the vacuum pump through the air extraction port.

4. The wafer stage device according to claim 3, characterized in that, The wafer stage device further includes a communication pipeline. One end of the communication pipeline penetrates into the inside of the stage body (200) from the outside of the stage body (200) and is communicated with the air extraction port, and the other end of the communication pipeline is communicated with the vacuum pump.

5. The wafer stage device according to claim 4, characterized in that, A valve is arranged on the communication pipeline, and the valve is configured to be opened when exposing the edge of the wafer to be processed (100) and closed when exposing the inside of the wafer to be processed (100).

6. A lithography machine, characterized in that, It includes the wafer stage device according to any one of claims 1-5.

7. The lithography machine according to claim 6, wherein The lithography machine further includes an exposure device (300). The exposure device (300) is located above the stage body (200). The exposure device (300) includes an exposure light source, a mask, and an exposure lens arranged in sequence from top to bottom. The exposure lens is used for focusing the exposure light source and projecting the pattern on the mask onto the wafer to be processed (100).

8. The lithography machine according to claim 7, wherein, The lithography machine further includes an immersion liquid supply and recovery device (400). The immersion liquid supply and recovery device (400) is located between the exposure lens and the stage body (200). The immersion liquid supply and recovery device (400) is provided with an immersion liquid supply channel and an immersion liquid recovery channel. The immersion liquid (500) is discharged from the immersion liquid supply channel onto the wafer to be processed (100) and recovered through the immersion liquid recovery channel.

9. The lithography machine according to claim 8, wherein, The lithography machine further includes an immersion liquid supply system (600). The immersion liquid supply system (600) is communicated with the immersion liquid supply channel and is used for conveying the immersion liquid (500) to the immersion liquid supply channel.

10. The lithography machine according to claim 9, characterized in that, The lithography machine further includes an immersion liquid recovery system (700). The immersion liquid recovery system (700) is communicated with the immersion liquid recovery channel and is used for pumping and discharging the immersion liquid (500).

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